JP2006286997A - Light emitting diode and its fabrication process - Google Patents

Light emitting diode and its fabrication process Download PDF

Info

Publication number
JP2006286997A
JP2006286997A JP2005105576A JP2005105576A JP2006286997A JP 2006286997 A JP2006286997 A JP 2006286997A JP 2005105576 A JP2005105576 A JP 2005105576A JP 2005105576 A JP2005105576 A JP 2005105576A JP 2006286997 A JP2006286997 A JP 2006286997A
Authority
JP
Japan
Prior art keywords
phosphor
light
fibers
led chip
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005105576A
Other languages
Japanese (ja)
Other versions
JP4744913B2 (en
Inventor
Tatsuhiko Yamada
龍彦 山田
Toshio Shimada
俊男 嶋田
Toshimichi Nakamura
利道 中村
Seiichi Takahashi
誠一 高橋
Akihiro Kato
陽弘 加藤
Masaharu Wakatsuki
雅晴 若月
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Okaya Electric Industry Co Ltd
Original Assignee
Okaya Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Okaya Electric Industry Co Ltd filed Critical Okaya Electric Industry Co Ltd
Priority to JP2005105576A priority Critical patent/JP4744913B2/en
Publication of JP2006286997A publication Critical patent/JP2006286997A/en
Application granted granted Critical
Publication of JP4744913B2 publication Critical patent/JP4744913B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a high luminance light emitting diode in which the efficiency for taking out light subjected to wavelength transformation by a phosphor can be enhanced, and the quantity and surface area of the phosphor can be increased. <P>SOLUTION: The light emitting diode 10 connects and fixes an LED chip 14 onto a substrate 12 composed of an insulating material, connects one electrode of the LED chip 14 with one external electrode 16a, and connects the other electrode of the LED chip 14 with the other external electrode 16b. In a recess 30 formed in the lower end face of a lens cap 28, a dome-like nonwoven fabric 22 carrying a phosphor 20 on the surface of fibers 24 is contained while directing its opening outward of the recess 30 and bonded to the lens cap 28. Furthermore, the lens cap 28 is secured onto the substrate 12 such that the LED chip 14 is covered with the dome-like nonwoven fabric 22. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

この発明は、ＬＥＤチップから発光される紫外線等の光を、所定波長の可視光等の光に波長変換して放射する蛍光体を有する発光ダイオード（ＬＥＤ）及びその製造方法に係り、特に、蛍光体で波長変換された光の取出し効率を向上させることができると共に蛍光体の量及び表面積を増大させることのできる高輝度な発光ダイオードと、その製造方法に関する。   The present invention relates to a light-emitting diode (LED) having a phosphor that emits light such as ultraviolet light emitted from an LED chip by converting the light into light such as visible light having a predetermined wavelength, and a method of manufacturing the same. The present invention relates to a high-intensity light-emitting diode capable of improving the extraction efficiency of light wavelength-converted by a body and increasing the amount and surface area of a phosphor, and a method for manufacturing the same.

図９は、蛍光体を有する従来のＬＥＤの一例を示すものであり、該発光ダイオード60は、発光ダイオードチップ搭載用の第１のリードフレーム62の先端部62ａに、その底面から上方に向かって孔径が徐々に拡大する略漏斗形状の凹部を設けると共に該凹部内面を反射面と成してリフレクタ64を形成し、該リフレクタ64の底面に発光ダイオードチップ（以下、ＬＥＤチップと称する）66をＡｇペースト等を介してダイボンドすることにより、上記第１のリードフレーム62と、ＬＥＤチップ66底面の一方の電極（図示せず）とを電気的に接続している。また、第２のリードフレーム68の先端部68ａと、上記ＬＥＤチップ66上面の他方の電極（図示せず）とをボンディングワイヤ70を介して電気的に接続して成る。   FIG. 9 shows an example of a conventional LED having a phosphor. The light-emitting diode 60 is directed upward from the bottom surface to the tip end portion 62a of the first lead frame 62 for mounting the light-emitting diode chip. A concave portion having a substantially funnel shape with a gradually increasing hole diameter is provided, and a reflector 64 is formed by forming the inner surface of the concave portion as a reflecting surface. The first lead frame 62 and one electrode (not shown) on the bottom surface of the LED chip 66 are electrically connected by die-bonding via a paste or the like. Further, the tip end portion 68 a of the second lead frame 68 and the other electrode (not shown) on the upper surface of the LED chip 66 are electrically connected via a bonding wire 70.

上記ＬＥＤチップ66の上面及び側面は、リフレクタ64内に充填された透光性エポキシ樹脂等のコーティング材72によって被覆・封止されており、また、上記コーティング材72中には、ＬＥＤチップ66から発光された紫外線等の光を所定波長の可視光等の光に変換する波長変換用の蛍光体74が分散状態で多数混入されている。
さらに、コーティング材72で被覆された上記ＬＥＤチップ66、第１のリードフレーム62の先端部62ａ及び端子部62ｂの上端、第２のリードフレーム68の先端部68ａ及び端子部68ｂの上端は、エポキシ樹脂等より成り、先端に凸レンズ部76を有する透光性の外囲器78によって被覆・封止されている。 The upper surface and the side surface of the LED chip 66 are covered and sealed with a coating material 72 such as a translucent epoxy resin filled in the reflector 64, and the LED chip 66 includes A large number of phosphors 74 for wavelength conversion that convert emitted light such as ultraviolet light into light such as visible light having a predetermined wavelength are mixed in a dispersed state.
Further, the LED chip 66 covered with the coating material 72, the upper ends of the tip portion 62a and the terminal portion 62b of the first lead frame 62, and the upper ends of the tip portion 68a and the terminal portion 68b of the second lead frame 68 are epoxy. It is made of resin or the like, and is covered and sealed by a translucent envelope 78 having a convex lens portion 76 at the tip.

而して、上記第１のリードフレーム62及び第２のリードフレーム68を介してＬＥＤチップ66に電圧が印加されると、ＬＥＤチップ66が発光して紫外線等の光が放射され、この光が上記コーティング材72中の蛍光体74に照射されることにより、所定波長の可視光等の光に波長変換され、波長変換された光が外囲器78の凸レンズ部76で集光されて外部へ放射されるようになっている。   Thus, when a voltage is applied to the LED chip 66 via the first lead frame 62 and the second lead frame 68, the LED chip 66 emits light and emits light such as ultraviolet rays. By irradiating the phosphor 74 in the coating material 72, the wavelength conversion into light such as visible light having a predetermined wavelength is performed, and the wavelength-converted light is condensed by the convex lens portion 76 of the envelope 78 and is emitted to the outside. It is supposed to be emitted.

ところで、上記従来のＬＥＤ60にあっては、蛍光体74で波長変換された光は、コーティング材72中の蛍光体74を透過する透過光となるため、コーティング材72内部を透過してコーティング材72外部へ出射するまでの間に、その一部が蛍光体74によって吸収（自己吸収）されてしまい、光の取出し効率が良好ではなかった。
また、上記蛍光体74から放射される光の輝度は、一般に蛍光体74の量及び表面積に略比例するものであるが、上記従来のＬＥＤ60にあっては、リフレクタ64内に充填したコーティング材72中に蛍光体74を混入していたことから、混入できる蛍光体74の量には限界があると共に、透過光の場合には、蛍光体74の量・膜厚が一定以上となると自己吸収の影響が大きくなって輝度低下を生じていた。 By the way, in the conventional LED 60, the light converted in wavelength by the phosphor 74 becomes transmitted light that passes through the phosphor 74 in the coating material 72. A part of the light was absorbed (self-absorbed) by the phosphor 74 before being emitted to the outside, and the light extraction efficiency was not good.
The brightness of the light emitted from the phosphor 74 is generally proportional to the amount and surface area of the phosphor 74. In the conventional LED 60, the coating material 72 filled in the reflector 64 is used. Since the amount of the phosphor 74 that can be mixed is limited, the amount of the phosphor 74 that can be mixed is limited. The effect was increased, resulting in a decrease in luminance.

この発明は、従来の上記問題点に鑑みて案出されたものであり、その目的とするところは、蛍光体で波長変換された光の取出し効率を向上させることができると共に蛍光体の量及び表面積を増大させることのできる高輝度な発光ダイオード及びその製造方法を実現することにある。   The present invention has been devised in view of the above-described conventional problems, and the object of the present invention is to improve the extraction efficiency of light wavelength-converted by the phosphor, and the amount of the phosphor and An object of the present invention is to realize a high-intensity light-emitting diode capable of increasing the surface area and a method for manufacturing the same.

上記の目的を達成するため、本発明に係る発光ダイオードは、基板上に固定されたＬＥＤチップと、該ＬＥＤチップを覆うレンズキャップと、該レンズキャップ内に収納され、蛍光体を担持して成る繊維の集合体とを有し、上記繊維の集合体でＬＥＤチップを覆うように、上記レンズキャップを基板上に固定したことを特徴とする。
上記繊維の集合体としては、不織布が好ましく、この場合、不織布を構成する繊維に蛍光体を担持させる。 In order to achieve the above object, a light emitting diode according to the present invention comprises an LED chip fixed on a substrate, a lens cap that covers the LED chip, and a phosphor that is accommodated in the lens cap. The lens cap is fixed on the substrate so as to cover the LED chip with the fiber aggregate.
The aggregate of the fibers is preferably a non-woven fabric. In this case, the phosphor is supported on the fibers constituting the non-woven fabric.

また、本発明に係る発光ダイオード製造方法は、高融点材料より成る繊維を低融点材料より成る繊維で被覆して形成した複合繊維より成る集積体を形成する工程と、上記複合繊維を構成する低融点材料より成る繊維の融点より高く、且つ、高融点材料より成る繊維の融点より低い温度で、上記複合繊維の集積体を加熱して低融点材料より成る繊維のみを溶融させ、高融点材料より成る繊維の交差部分を、溶融した低融点材料より成る繊維を介して接着することにより、不織布を形成すると共に、粒子状の蛍光体を、溶融した低融点材料より成る繊維を介して、不織布を構成する繊維に接着する工程と、
を備えることを特徴とする。 Further, the light emitting diode manufacturing method according to the present invention includes a step of forming an assembly made of a composite fiber formed by coating a fiber made of a high melting point material with a fiber made of a low melting point material, and a low The composite fiber assembly is heated at a temperature higher than the melting point of the fiber made of the melting point material and lower than the melting point of the fiber made of the high melting point material to melt only the fiber made of the low melting point material. The non-woven fabric is formed by adhering the intersecting portions of the fibers through the fibers made of the melted low melting point material, and the particulate phosphor is bonded to the nonwoven fabric through the fibers made of the melted low melting point material. Adhering to the constituent fibers;
It is characterized by providing.

本発明の発光ダイオードにあっては、レンズキャップ内に収納された蛍光体を担持して成る繊維の集合体でＬＥＤチップを覆ったことから、蛍光体で波長変換される光を、蛍光体で反射された反射光として取り出すことができる。このため、蛍光体で波長変換される光を透過光として取り出していた従来の発光ダイオード60に比べ、光の取出し効率が向上し、高輝度化を図ることができる。しかも、ＬＥＤチップが繊維の集合体で覆われているので、ＬＥＤチップから放射されたほぼ全ての光を、蛍光体を担持した繊維の集合体に照射することができる。
また、本発明の発光ダイオードは、単位体積当たりの繊維の表面積が大きい繊維の集合体に蛍光体を担持させたことから、従来の発光ダイオード60の如く、リフレクタ64内に充填したコーティング材72中に蛍光体74を混入した場合に比べ、蛍光体の量及び表面積を増大させることができる。
尚、本発明の発光ダイオードは、蛍光体で波長変換される光を反射光として取り出しているため、蛍光体の量が増大しても、光を透過光として取り出している従来の発光ダイオード60の如く、蛍光体による光の自己吸収に起因する輝度低下を生じることがない。 In the light emitting diode of the present invention, since the LED chip is covered with an aggregate of fibers formed by supporting the phosphor housed in the lens cap, the light whose wavelength is converted by the phosphor is converted by the phosphor. It can be taken out as reflected reflected light. For this reason, the light extraction efficiency is improved and higher luminance can be achieved as compared with the conventional light emitting diode 60 in which the light whose wavelength is converted by the phosphor is extracted as transmitted light. Moreover, since the LED chip is covered with the fiber assembly, almost all the light emitted from the LED chip can be applied to the fiber assembly carrying the phosphor.
In addition, since the light emitting diode of the present invention supports the phosphor on the fiber assembly having a large surface area of the fiber per unit volume, the coating material 72 filled in the reflector 64, like the conventional light emitting diode 60, is included. The amount and surface area of the phosphor can be increased as compared with the case where the phosphor 74 is mixed into the phosphor.
Since the light emitting diode of the present invention takes out the light whose wavelength is converted by the phosphor as reflected light, the light emitting diode of the conventional light emitting diode 60 that takes out the light as transmitted light even if the amount of the phosphor increases. As described above, the luminance does not decrease due to self-absorption of light by the phosphor.

多数の繊維が立体的に絡み合って形成された不織布を、上記繊維の集合体として用い、
該不織布を構成する繊維に蛍光体を担持させた場合には、単位体積当たりの繊維の表面積が極めて大きいことから、従来の発光ダイオード60の如く、リフレクタ64内に充填したコーティング材72中に蛍光体74を混入した場合に比べ、蛍光体の量及び表面積を飛躍的に増大させることができる。 Using a nonwoven fabric formed by three-dimensionally intertwining a large number of fibers as an assembly of the fibers,
When the phosphor is supported on the fiber constituting the nonwoven fabric, the surface area of the fiber per unit volume is extremely large. Therefore, like the conventional light emitting diode 60, the fluorescent material is coated in the coating material 72 filled in the reflector 64. Compared with the case where the body 74 is mixed, the amount and surface area of the phosphor can be dramatically increased.

本発明の発光ダイオードの製造方法にあっては、高融点材料より成る繊維を低融点材料より成る繊維で被覆した複合繊維を用い、低融点材料より成る繊維のみを溶融させて接着剤として機能させることにより、不織布の形成と、該不織布を構成する繊維への蛍光体の担持を略同時に行うことができるので、極めて製造容易である。   In the light emitting diode manufacturing method of the present invention, a composite fiber obtained by coating a fiber made of a high melting point material with a fiber made of a low melting point material is used, and only the fiber made of a low melting point material is melted to function as an adhesive. As a result, the formation of the nonwoven fabric and the loading of the phosphor on the fibers constituting the nonwoven fabric can be performed almost simultaneously, which makes it extremely easy to produce.

以下、図面に基づき、本発明に係る発光ダイオードの実施形態を説明する。
図１は、本発明に係る発光ダイオード10を示すものであり、該発光ダイオード10は、樹脂やセラミック等の絶縁材料より成る基板12上に、ＬＥＤチップ14を接続・固定して成る。該ＬＥＤチップ14は、窒化ガリウム系半導体結晶等で構成されており、後述する蛍光体を励起させる波長の紫外線や青色可視光等の光を発光するものである。
また、上記基板12の表面から側面を経て裏面にまで延設された一対の外部電極16ａ，16ｂが相互に絶縁された状態で形成されている。 Hereinafter, an embodiment of a light emitting diode according to the present invention will be described with reference to the drawings.
FIG. 1 shows a light emitting diode 10 according to the present invention. The light emitting diode 10 is formed by connecting and fixing an LED chip 14 on a substrate 12 made of an insulating material such as resin or ceramic. The LED chip 14 is composed of a gallium nitride semiconductor crystal or the like, and emits light such as ultraviolet light or blue visible light having a wavelength that excites a phosphor to be described later.
A pair of external electrodes 16a and 16b extending from the front surface of the substrate 12 through the side surface to the back surface are formed in a state of being insulated from each other.

上記ＬＥＤチップ14上面の一方の電極（図示せず）は、ボンディングワイヤ18を介して、一方の外部電極16ａに接続されると共に、ＬＥＤチップ14上面の他方の電極（図示せず）は、ボンディングワイヤ18を介して、他方の外部電極16ｂに接続されている。   One electrode (not shown) on the upper surface of the LED chip 14 is connected to one external electrode 16a via a bonding wire 18, and the other electrode (not shown) on the upper surface of the LED chip 14 is bonded. The wire 18 is connected to the other external electrode 16b.

上記ＬＥＤチップ14及びボンディングワイヤ18は、蛍光体20を担持して成るドーム状の繊維の集合体としての不織布22で覆われている。
不織布22は、図２及び図３に示すように、多数の繊維24が立体的に絡み合って形成されるものであり、繊維24間には多数の空隙26（図３参照）が形成されており、また、多数の繊維24が立体的に絡み合っているため、単位体積当たりの繊維24の表面積が極めて大きいものである。蛍光体20は、不織布22を構成する繊維24の表面に被着・担持されているものであり、図４に示すように、繊維24の表面に、蛍光体20の粒子が多数被着されている。
尚、不織布22を構成する繊維24の繊維密度や、不織布22の厚さ、目付等を適宜調整することにより、不織布22を構成する繊維24の総表面積を任意に増減可能である。 The LED chip 14 and the bonding wire 18 are covered with a non-woven fabric 22 as an aggregate of dome-shaped fibers that carry the phosphor 20.
As shown in FIGS. 2 and 3, the non-woven fabric 22 is formed by tangling a large number of fibers 24, and a large number of voids 26 (see FIG. 3) are formed between the fibers 24. In addition, since a large number of fibers 24 are intertwined in three dimensions, the surface area of the fibers 24 per unit volume is extremely large. The phosphor 20 is attached to and supported on the surface of the fiber 24 constituting the nonwoven fabric 22, and as shown in FIG. 4, a large number of particles of the phosphor 20 are attached to the surface of the fiber 24. Yes.
Note that the total surface area of the fibers 24 constituting the nonwoven fabric 22 can be arbitrarily increased or decreased by appropriately adjusting the fiber density of the fibers 24 constituting the nonwoven fabric 22, the thickness of the nonwoven fabric 22, the basis weight, and the like.

上記繊維24は、ナイロン、ポリエステル、アクリル、ポリプロピレン、ポリ塩化ビニル、フッ素樹脂等の樹脂繊維、レーヨン等のセルロース系の化学繊維、ガラス繊維、アルミナ、ボロン等の金属繊維、天然繊維等の短繊維から成り、その直径は１〜２０μｍ、長さは０．５〜２０mm程度である。
尚、長さが５０〜１００mm程度の長繊維から成る繊維24を用いることも勿論可能である。 The fibers 24 are resin fibers such as nylon, polyester, acrylic, polypropylene, polyvinyl chloride and fluororesin, cellulosic chemical fibers such as rayon, metal fibers such as glass fiber, alumina and boron, and short fibers such as natural fibers. The diameter is 1 to 20 μm, and the length is about 0.5 to 20 mm.
Of course, it is also possible to use fibers 24 made of long fibers having a length of about 50 to 100 mm.

上記蛍光体20は、紫外線や青色可視光等の光の照射を受けると、この光を所定波長の可視光等の光に波長変換するものであり、例えば以下の組成のものを用いることができる。
紫外線等の光を赤色可視光に変換する赤色発光用の蛍光体20として、Ｍ２Ｏ２Ｓ：Ｅｕ（Ｍは、Ｌａ、Ｇｄ、Ｙの何れか１種）、0.5ＭｇＦ２・3.5ＭｇＯ・ＧｅＯ２：Ｍｎ、2ＭｇＯ・2ＬｉＯ２・Ｓｂ２Ｏ３：Ｍｎ、Ｙ（Ｐ，Ｖ）Ｏ4：Ｅｕ、ＹＶＯ4：Ｅｕ、（ＳｒＭｇ）3（ＰＯ4）：Ｓｎ、Ｙ２Ｏ３：Ｅｕ、ＣａＳｉＯ３：Ｐｂ，Ｍｎ等がある。
また、紫外線等の光を緑色可視光に変換する緑色発光用の蛍光体20として、ＢａＭｇ２Ａｌ１６Ｏ２７：Ｅｕ，Ｍｎ、Ｚｎ２ＳｉＯ4：Ｍｎ、（Ｃｅ，Ｔｂ，Ｍｎ）ＭｇＡｌ１１Ｏ１９、ＬａＰＯ4：Ｃｅ，Ｔｂ、（Ｃｅ，Ｔｂ）ＭｇＡｌ１１Ｏ１９、Ｙ２ＳｉＯ５：Ｃｅ，Ｔｂ、ＺｎＳ：Ｃｕ，Ａｌ、ＺｎＳ：Ｃｕ，Ａｕ，Ａｌ、（Ｚｎ，Ｃｄ）Ｓ：Ｃｕ，Ａｌ、ＳｒＡｌ２Ｏ４：Ｅｕ、ＳｒＡｌ２Ｏ４：Ｅｕ，Ｄｙ、Ｓｒ４Ａｌ１４Ｏ２５：Ｅｕ，Ｄｙ、Ｙ３Ａｌ５Ｏ１２：Ｔｂ、Ｙ３（Ａｌ，Ｇａ）５Ｏ１２：Ｔｂ、Ｙ３Ａｌ５Ｏ１２：Ｃｅ、Ｙ３（Ａｌ，Ｇａ）５Ｏ１２：Ｃｅ等がある。
更に、紫外線等の光を青色可視光に変換する青色発光用の蛍光体20として、(ＳｒＣａＢａ)５(ＰＯ４)３Ｃｌ：Ｅｕ、ＢａＭｇ２Ａｌ１６Ｏ２７：Ｅｕ、（ＳｒＭｇ）２Ｐ２Ｏ7：Ｅｕ、Ｓｒ２Ｐ２Ｏ7：Ｅｕ、Ｓｒ２Ｐ２Ｏ７：Ｓｎ、Ｓｒ５（ＰＯ4）３Ｃｌ：Ｅｕ、ＢａＭｇ２Ａｌ１６Ｏ２７：Ｅｕ、ＣａＷＯ4、ＣａＷＯ4：Ｐｂ、ＺｎＳ：Ａｇ，Ｃｌ、ＺｎＳ：Ａｇ，Ａｌ、(Ｓｒ，Ｃａ，Ｍｇ)１０(ＰＯ４)６Ｃｌ２：Ｅｕ等がある。
上記赤色発光用の蛍光体20、緑色発光用の蛍光体20、青色発光用の蛍光体20を適宜選択・混合して用いることで、種々の色の発色が可能である。
また、青色の可視光を放射するＬＥＤチップ14を用いて白色光を得る場合には、ＬＥＤチップ14から放射される光を補色としての黄色可視光に変換する黄色発光用の蛍光体24として、Ｙ３Ａｌ５Ｏ１２：Ｃｅ、ＹＢＯ３：Ｃｅ、ＢａＭｇＡｌ１０Ｏ１７：Ｅｕ，Ｍｎ、（Ｓｒ，Ｃａ，Ｂａ）（Ａｌ，Ｇａ）２Ｓ４：Ｅｕ、Ｂａ２ＳｉＯ４：Ｅｕ、（Ｓｒ，Ｂａ）２ＳｉＯ４：Ｅｕ、ＳｉＡｌＯＮ：Ｅｕ等がある。
尚、蛍光体20は、有機、無機の蛍光染料や、有機、無機の蛍光顔料を含むものである。 When the phosphor 20 is irradiated with light such as ultraviolet rays or blue visible light, the phosphor 20 converts the wavelength of the light into light such as visible light having a predetermined wavelength. For example, the phosphor having the following composition can be used. .
As a phosphor 20 for red light emission that converts light such as ultraviolet rays into red visible light, M 2 O 2 S: Eu (M is one of La, Gd, and Y), 0.5 MgF 2 .3.5MgO. GeO 2: Mn, 2MgO · 2LiO 2 · Sb 2 O 3: Mn, Y (P, V) O 4: Eu, YVO 4: Eu, (SrMg) 3 (PO 4): Sn, Y 2 O 3: Eu , CaSiO 3 : Pb, Mn and the like.
Further, as a phosphor 20 for green light emission that converts light such as ultraviolet light into green visible light, BaMg 2 Al 16 O 27 : Eu, Mn, Zn 2 SiO 4 : Mn, (Ce, Tb, Mn) MgAl 11 O 19 , LaPO 4 : Ce, Tb, (Ce, Tb) MgAl 11 O 19 , Y 2 SiO 5 : Ce, Tb, ZnS: Cu, Al, ZnS: Cu, Au, Al, (Zn, Cd) S: Cu , Al, SrAl 2 O 4 : Eu, SrAl 2 O 4 : Eu, Dy, Sr 4 Al 14 O 25 : Eu, Dy, Y 3 Al 5 O 12 : Tb, Y 3 (Al, Ga) 5 O 12 : There are Tb, Y 3 Al 5 O 12 : Ce, Y 3 (Al, Ga) 5 O 12 : Ce, and the like.
Furthermore, as a phosphor 20 for blue light emission that converts light such as ultraviolet rays into blue visible light, (SrCaBa) 5 (PO 4 ) 3 Cl: Eu, BaMg 2 Al 16 O 27 : Eu, (SrMg) 2 P 2 O 7 : Eu, Sr 2 P 2 O 7 : Eu, Sr 2 P 2 O 7 : Sn, Sr 5 (PO 4 ) 3 Cl: Eu, BaMg 2 Al 16 O 27 : Eu, CaWO 4 , CaWO 4 : Pb , ZnS: Ag, Cl, ZnS : Ag, Al, (Sr, Ca, Mg) 10 (PO 4) 6 Cl 2: there is Eu and the like.
By appropriately selecting and mixing the phosphor 20 for red light emission, the phosphor 20 for green light emission, and the phosphor 20 for blue light emission, it is possible to develop various colors.
Further, when obtaining white light using the LED chip 14 that emits blue visible light, as the phosphor 24 for yellow light emission that converts the light emitted from the LED chip 14 into yellow visible light as a complementary color, Y 3 Al 5 O 12 : Ce, YBO 3 : Ce, BaMgAl 10 O 17 : Eu, Mn, (Sr, Ca, Ba) (Al, Ga) 2 S 4 : Eu, Ba 2 SiO 4 : Eu, (Sr , Ba) 2 SiO 4 : Eu, SiAlON: Eu, and the like.
The phosphor 20 includes organic and inorganic fluorescent dyes and organic and inorganic fluorescent pigments.

上記基板12上には、無色透明なメタクリル樹脂等の透光性材料で構成され、その下端から上端に向かって径が徐々に拡大する略裁頭逆円錐台形状と成されたレンズキャップ28が固定されており、該レンズキャップ28の下端面に形成した凹所30内に、上記ＬＥＤチップ14、ボンディングワイヤ18及び不織布22を収納・配置することにより、ＬＥＤチップ14、ボンディングワイヤ18及び不織布22をレンズキャップ28で覆っている。
また、上記レンズキャップ28の上端面の中央には、略半球状のレンズ部31が形成されている。 On the substrate 12, a lens cap 28 made of a translucent material such as a colorless transparent methacrylic resin and having a substantially truncated frustoconical shape whose diameter gradually increases from the lower end toward the upper end is provided. The LED chip 14, the bonding wire 18 and the nonwoven fabric 22 are accommodated and disposed in a recess 30 which is fixed and formed in the lower end surface of the lens cap 28. Is covered with a lens cap 28.
In addition, a substantially hemispherical lens portion 31 is formed at the center of the upper end surface of the lens cap 28.

本発明の発光ダイオード10にあっては、一対の外部電極16ａ，16ｂを介してＬＥＤチップ14に電圧が印加されると、ＬＥＤチップ14が発光して、上記蛍光体20を励起させる紫外線や可視光等の光が放射される。この光が、ＬＥＤチップ14を覆うドーム状の不織布22に担持された蛍光体20に照射され、所定波長の可視光等の光に波長変換された後、レンズキャップ28を透過して外部へ放射されるのである。   In the light emitting diode 10 of the present invention, when a voltage is applied to the LED chip 14 through the pair of external electrodes 16a and 16b, the LED chip 14 emits light, and ultraviolet light or visible light that excites the phosphor 20 is visible. Light such as light is emitted. This light is applied to the phosphor 20 carried on the dome-shaped non-woven fabric 22 covering the LED chip 14, converted into light such as visible light having a predetermined wavelength, and then transmitted to the outside through the lens cap 28. It is done.

而して、本発明の発光ダイオード10にあっては、レンズキャップ28の凹所30内に収納されたドーム状の不織布22でＬＥＤチップ14を覆い、該不織布22を構成する繊維24の表面に蛍光体20を担持せしめたことから、蛍光体20で波長変換される光を、蛍光体20で反射された反射光として取り出すことができる。このため、蛍光体74で波長変換される光を透過光として取り出していた従来の発光ダイオード60に比べ、光の取出し効率が向上し、高輝度化を図ることができる。しかも、ＬＥＤチップ14が不織布22で覆われているので、ＬＥＤチップ14から放射されたほぼ全ての光を、蛍光体20を担持した不織布22に照射することができる。
また、本発明の発光ダイオード10は、単位体積当たりの繊維24の表面積が極めて大きい不織布22を構成する繊維24の表面に蛍光体20を担持せしめたことから、従来の発光ダイオード60の如く、リフレクタ64内に充填したコーティング材72中に蛍光体74を混入した場合に比べ、蛍光体20の量及び表面積を飛躍的に増大させることができる。この場合、本発明の発光ダイオード10は、上記の通り、蛍光体20で波長変換される光を反射光として取り出しているため、蛍光体20の量が増大しても、光を透過光として取り出している従来の発光ダイオード60の如く、蛍光体による光の自己吸収に起因する輝度低下の生じることがない。 Thus, in the light emitting diode 10 of the present invention, the LED chip 14 is covered with the dome-shaped non-woven fabric 22 accommodated in the recess 30 of the lens cap 28, and the surface of the fiber 24 constituting the non-woven fabric 22 is covered. Since the phosphor 20 is carried, the light whose wavelength is converted by the phosphor 20 can be extracted as reflected light reflected by the phosphor 20. For this reason, compared with the conventional light emitting diode 60 in which the light whose wavelength is converted by the phosphor 74 is extracted as transmitted light, the light extraction efficiency is improved and high luminance can be achieved. In addition, since the LED chip 14 is covered with the nonwoven fabric 22, almost all the light emitted from the LED chip 14 can be irradiated onto the nonwoven fabric 22 carrying the phosphor 20.
Further, the light emitting diode 10 of the present invention has the phosphor 20 supported on the surface of the fiber 24 constituting the nonwoven fabric 22 in which the surface area of the fiber 24 per unit volume is extremely large. Compared with the case where the phosphor 74 is mixed in the coating material 72 filled in the 64, the amount and surface area of the phosphor 20 can be dramatically increased. In this case, as described above, the light emitting diode 10 of the present invention extracts the light whose wavelength is converted by the phosphor 20 as reflected light, so that even if the amount of the phosphor 20 increases, the light is extracted as transmitted light. Unlike the conventional light emitting diode 60, the luminance does not decrease due to self-absorption of light by the phosphor.

尚、上記不織布22は、ドーム状に限定されるものではなく、例えば内部が中空の直方体状であっても良く、要するに、ＬＥＤチップ14が不織布22で覆われていれば良い。   The nonwoven fabric 22 is not limited to a dome shape, and may be, for example, a hollow rectangular parallelepiped shape. In short, the LED chip 14 only needs to be covered with the nonwoven fabric 22.

以下、本発明の発光ダイオード10において、不織布22に蛍光体20を担持させる方法について説明する。
先ず、ポリプロピレン等の高融点材料より成る繊維24を、ポリエチレン等の低融点材料より成る繊維32で被覆した所定長さの複合繊維34（図５参照）を多数準備し、カード法やエアレイ法等を用いて、これら多数の複合繊維34より成るシート状の集積体（ウェブ）を形成する。 Hereinafter, a method for supporting the phosphor 20 on the nonwoven fabric 22 in the light emitting diode 10 of the present invention will be described.
First, a large number of composite fibers 34 (see FIG. 5) having a predetermined length obtained by coating fibers 24 made of a high melting point material such as polypropylene with fibers 32 made of a low melting point material such as polyethylene are prepared. Is used to form a sheet-like aggregate (web) composed of a large number of these composite fibers 34.

次に、シート状の集積体を、上記複合繊維34を構成する低融点材料より成る繊維32の融点より高く、且つ、高融点材料より成る繊維24の融点より低い温度で加熱し、低融点材料より成る繊維32のみを溶融させると共に、粒子状の蛍光体20を上記集積体に吹き付ける。   Next, the sheet-like assembly is heated at a temperature higher than the melting point of the fiber 32 made of the low-melting-point material constituting the composite fiber 34 and lower than the melting point of the fiber 24 made of the high-melting-point material. Only the fibers 32 made of the melt are melted, and the particulate phosphor 20 is sprayed onto the aggregate.

この結果、高融点材料より成る繊維24の交差部分が、溶融した低融点材料より成る繊維32を介して接着することにより、シート状の不織布22が形成されると共に、粒子状の蛍光体20が、溶融した低融点材料より成る繊維32を介して、不織布22を構成する繊維24の表面に接着・担持される。
上記方法にあっては、高融点材料より成る繊維24を低融点材料より成る繊維32で被覆した複合繊維34を用い、低融点材料より成る繊維32のみを溶融させて接着剤として機能させることにより、不織布22の形成と、不織布22を構成する繊維24の表面への蛍光体20の担持を略同時に行うことができるので、極めて製造容易である。
上記方法で製造されたシート状の不織布22を型抜き等して、上記ドーム状の不織布22は形成される。 As a result, the intersecting portion of the fibers 24 made of the high melting point material is bonded through the melted fibers 32 made of the low melting point material, whereby the sheet-like nonwoven fabric 22 is formed and the particulate phosphor 20 is formed. Then, it is bonded and supported on the surface of the fiber 24 constituting the nonwoven fabric 22 through the fiber 32 made of a molten low melting point material.
In the above method, by using the composite fiber 34 in which the fiber 24 made of the high melting point material is coated with the fiber 32 made of the low melting point material, only the fiber 32 made of the low melting point material is melted to function as an adhesive. Since the formation of the nonwoven fabric 22 and the loading of the phosphor 20 on the surface of the fibers 24 constituting the nonwoven fabric 22 can be performed almost simultaneously, it is extremely easy to manufacture.
The dome-shaped nonwoven fabric 22 is formed by punching the sheet-shaped nonwoven fabric 22 manufactured by the above method.

尚、上記方法以外にも、例えば、蛍光体20の分散樹脂液中に不織布22を浸漬した後乾燥させたり、不織布22の上方から、蛍光体20の分散樹脂液を滴下させることにより、不織布22を構成する繊維24の表面に蛍光体20を被着・担持させても良い。
また、不織布22を加熱して、該不織布22を構成する繊維24の表面を溶融させた状態で蛍光体20を吹き付けることにより、不織布22を構成する繊維24の表面に蛍光体20を被着・担持させることもできる。
さらに、高温加熱した蛍光体20を不織布22に吹きつけ、不織布22を構成する繊維24を一部溶融させることにより、不織布22を構成する繊維24の表面に蛍光体20を被着・担持させても良い。 In addition to the above method, for example, the nonwoven fabric 22 is dipped in the dispersion resin solution of the phosphor 20 and then dried, or the dispersion resin solution of the phosphor 20 is dropped from above the nonwoven fabric 22, so that the nonwoven fabric 22 is dropped. Alternatively, the phosphor 20 may be attached to and supported on the surface of the fibers 24 constituting the.
Further, by heating the nonwoven fabric 22 and spraying the phosphor 20 in a state where the surface of the fiber 24 constituting the nonwoven fabric 22 is melted, the phosphor 20 is deposited on the surface of the fiber 24 constituting the nonwoven fabric 22. It can also be supported.
Further, the phosphor 20 heated at a high temperature is sprayed onto the nonwoven fabric 22, and the fibers 24 constituting the nonwoven fabric 22 are partially melted to adhere and carry the phosphor 20 on the surface of the fibers 24 constituting the nonwoven fabric 22. Also good.

上記方法で製造されたドーム状の不織布22は、上記レンズキャップ28の凹所30内に、その開口部を凹所30外方に向けた状態で収納されると共に、接着等によりレンズキャップ28に固着される（図６参照）。その後、図６に示すように、ドーム状の不織布22でＬＥＤチップ14及びボンディングワイヤ18を覆うように、レンズキャップ28を基板12上に載置し、接着等の適宜な手段で基板12上に固定し、本発明の発光ダイオード10が完成する。   The dome-shaped non-woven fabric 22 manufactured by the above method is housed in the recess 30 of the lens cap 28 with its opening directed outward from the recess 30 and attached to the lens cap 28 by adhesion or the like. It is fixed (see FIG. 6). Thereafter, as shown in FIG. 6, a lens cap 28 is placed on the substrate 12 so as to cover the LED chip 14 and the bonding wire 18 with a dome-shaped nonwoven fabric 22, and the substrate 12 is adhered to the substrate 12 by an appropriate means such as adhesion. The light emitting diode 10 of the present invention is completed by fixing.

図７は、本発明に係る発光ダイオード10の変形例を示すものであり、該発光ダイオード10の変形例は、空気の屈折率と、ＬＥＤチップ14の屈折率との間の屈折率を有する材料で構成された透光性部材42により、上記ＬＥＤチップ14を被覆・封止した点に特徴を有するものであり、その他の構成は、上記発光ダイオード10と同一である。
上記透光性部材42は、例えば、シリコン樹脂で構成される。すなわち、シリコン樹脂の屈折率は１．５程度であり、屈折率が１の空気と、屈折率が３．３程度のＬＥＤチップ14（例えば窒化ガリウム系の場合）との間の屈折率を有している。
この発光ダイオード10の変形例においては、ＬＥＤチップ14上に、未硬化状態の透光性部材42を滴下した後、硬化させてＬＥＤチップ14を封止後、ドーム状の不織布22でＬＥＤチップ14、ボンディングワイヤ18及び透光性部材42を覆うように、レンズキャップ28を基板12上に固定すれば良い。 FIG. 7 shows a modification of the light emitting diode 10 according to the present invention. The modification of the light emitting diode 10 is a material having a refractive index between the refractive index of air and the refractive index of the LED chip 14. The LED chip 14 is covered and sealed by the translucent member 42 configured as described above, and the other configuration is the same as that of the light emitting diode 10.
The translucent member 42 is made of, for example, silicon resin. That is, the refractive index of silicon resin is about 1.5, and has a refractive index between air having a refractive index of 1 and an LED chip 14 having a refractive index of about 3.3 (for example, in the case of gallium nitride). is doing.
In this modification of the light emitting diode 10, an uncured translucent member 42 is dropped on the LED chip 14, then cured and sealed, and then the LED chip 14 is sealed with a dome-shaped nonwoven fabric 22. The lens cap 28 may be fixed on the substrate 12 so as to cover the bonding wire 18 and the translucent member 42.

この発光ダイオード10の変形例において、空気の屈折率と、ＬＥＤチップ14の屈折率との間の屈折率を有する材料より成る透光性部材42で、ＬＥＤチップ14を封止したのは次の理由による。
すなわち、空気の屈折率とＬＥＤチップ14の屈折率とは差が大きいため、ＬＥＤチップ14から放射された光の一部が、空気との界面で反射してＬＥＤチップ14へ戻ってくるため光の取出し効率が悪い。そこで、上記の如く、空気の屈折率とＬＥＤチップ14の屈折率との間の屈折率を有する透光性部材42でＬＥＤチップ14を封止すれば、ＬＥＤチップ14と透光性部材42との間、透光性部材42と空気との間の屈折率の差が小さいため、ＬＥＤチップ14と透光性部材42との界面、透光性部材42と空気との界面で反射する光の量が少なく、光の取出し効率が向上するのである。 In this modification of the light emitting diode 10, the LED chip 14 was sealed with a light-transmitting member 42 made of a material having a refractive index between the refractive index of air and the refractive index of the LED chip 14. Depending on the reason.
That is, since the difference between the refractive index of air and the refractive index of the LED chip 14 is large, a part of the light emitted from the LED chip 14 is reflected at the interface with the air and returned to the LED chip 14 so that the light is emitted. The extraction efficiency is poor. Therefore, as described above, if the LED chip 14 is sealed with the translucent member 42 having a refractive index between the refractive index of air and the refractive index of the LED chip 14, the LED chip 14 and the translucent member 42 Since the difference in refractive index between the translucent member 42 and air is small, the light reflected at the interface between the LED chip 14 and the translucent member 42 and at the interface between the translucent member 42 and air is reduced. The amount is small and the light extraction efficiency is improved.

図８は、本発明に係る発光ダイオード10の他の変形例を示すものであり、該発光ダイオード40の変形例は、ＬＥＤチップ14及びボンディングワイヤ18を、略円筒状の透光性の枠体43で囲繞すると共に、該枠体43内に充填した上記透光性部材42によりＬＥＤチップ14を被覆・封止し、ＬＥＤチップ14、ボンディングワイヤ18、透光性部材42及び枠体43を、ドーム状の不織布22で覆ったものである。
尚、上記枠体43と透光性部材42とは、屈折率に差が生じないように同一材料で構成するのが、光の取出し効率を向上させる上で好ましい。 FIG. 8 shows another modified example of the light-emitting diode 10 according to the present invention. The modified example of the light-emitting diode 40 includes an LED chip 14 and a bonding wire 18 and a substantially cylindrical translucent frame. The LED chip 14 is covered and sealed by the light transmissive member 42 filled in the frame body 43, and the LED chip 14, the bonding wire 18, the light transmissive member 42, and the frame body 43, It is covered with a dome-shaped nonwoven fabric 22.
The frame body 43 and the translucent member 42 are preferably made of the same material so as not to cause a difference in refractive index in order to improve light extraction efficiency.

この変形例においては、ＬＥＤチップ14及びボンディングワイヤ18を上記枠体43で囲繞した後、該枠体43内に未硬化状態の透光性部材42を充填後、硬化させてＬＥＤチップ14を封止後、ドーム状の不織布22でＬＥＤチップ14、ボンディングワイヤ18、透光性部材42及び枠体43を覆うように、レンズキャップ28を基板12上に固定すれば良い。
この発光ダイオード10の変形例は、ＬＥＤチップ14及びボンディングワイヤ18を枠体43で囲繞すると共に、該枠体43内に充填した透光性部材42でＬＥＤチップ14を封止したので、粘度の低い未硬化状態の透光性部材42を用いた場合であっても、透光性部材42が基板12上に拡散・流出することを防止できる。 In this modification, after the LED chip 14 and the bonding wire 18 are surrounded by the frame body 43, the frame body 43 is filled with an uncured translucent member 42 and then cured to seal the LED chip 14. After stopping, the lens cap 28 may be fixed on the substrate 12 so that the LED chip 14, the bonding wire 18, the translucent member 42, and the frame body 43 are covered with the dome-shaped nonwoven fabric 22.
In this modification of the light emitting diode 10, the LED chip 14 and the bonding wire 18 are surrounded by the frame body 43, and the LED chip 14 is sealed by the translucent member 42 filled in the frame body 43. Even when a low uncured translucent member 42 is used, it is possible to prevent the translucent member 42 from diffusing and outflowing onto the substrate 12.

上記においては、繊維の集合体として、不織布22を用いた場合を例に挙げて説明したが、本発明はこれに限定されるものではなく、多数の繊維を織り込んで形成した織布を用い、該織布を構成する繊維に蛍光体を担持させても良い。この織布も、不織布22には及ばないものの、単位体積当たりの繊維の表面積が大きいものである。   In the above, the case where the nonwoven fabric 22 is used has been described as an example of the fiber assembly, but the present invention is not limited to this, and a woven fabric formed by weaving a large number of fibers is used. A phosphor may be supported on the fibers constituting the woven fabric. Although this woven fabric does not reach the nonwoven fabric 22, the surface area of the fibers per unit volume is large.

また、上記においては、不織布22を構成する繊維24の「表面」に蛍光体20を担持せしめた場合を例に挙げて説明したが、本発明はこれに限定されるものではなく、例えば、透明樹脂等より成る透光性の繊維24に粒子状の蛍光体20を練り混むことにより、不織布22を構成する繊維24に蛍光体20を担持させても良い。
この場合、例えば、未硬化状態の透明樹脂中に、粒子状の蛍光体を所定量混合した後、透明樹脂を延伸、硬化させ、その後、所定の長さに切断することにより、蛍光体20が練り混まれた多数の繊維を形成し、斯かる蛍光体20が練り混まれた多数の繊維を用いて不織布22を形成すれば良い。 Further, in the above description, the case where the phosphor 20 is supported on the “surface” of the fiber 24 constituting the nonwoven fabric 22 has been described as an example, but the present invention is not limited to this, for example, transparent The phosphors 20 may be supported on the fibers 24 constituting the nonwoven fabric 22 by kneading and mixing the particulate phosphors 20 with translucent fibers 24 made of resin or the like.
In this case, for example, after mixing a predetermined amount of a particulate phosphor in an uncured transparent resin, the transparent resin is stretched and cured, and then cut into a predetermined length to obtain the phosphor 20 A large number of fibers kneaded and mixed may be formed, and the nonwoven fabric 22 may be formed using a large number of fibers mixed with the phosphor 20.

本発明に係る発光ダイオードを模式的に示す概略断面図である。It is a schematic sectional drawing which shows typically the light emitting diode which concerns on this invention. 蛍光体を担持した不織布を模式的に示す部分拡大図である。It is the elements on larger scale which show typically the nonwoven fabric which carry | supported fluorescent substance. 不織布を構成する繊維を模式的に示す拡大図である。It is an enlarged view which shows typically the fiber which comprises a nonwoven fabric. 不織布を構成する繊維を模式的に示す断面図である。It is sectional drawing which shows typically the fiber which comprises a nonwoven fabric. 複合繊維を示す概略断面図である。It is a schematic sectional drawing which shows a composite fiber. 本発明に係る発光ダイオードの製造方法を模式的に示す説明図である。It is explanatory drawing which shows typically the manufacturing method of the light emitting diode which concerns on this invention. 本発明に係る発光ダイオードの変形例を模式的に示す概略断面図である。It is a schematic sectional drawing which shows typically the modification of the light emitting diode which concerns on this invention. 本発明に係る発光ダイオードの変形例を模式的に示す概略断面図である。It is a schematic sectional drawing which shows typically the modification of the light emitting diode which concerns on this invention. 従来の発光ダイオードを模式的に示す概略断面図である。It is a schematic sectional drawing which shows the conventional light emitting diode typically.

符号の説明Explanation of symbols

10 発光ダイオード
12 基板
14 ＬＥＤチップ
16ａ外部電極
16ｂ外部電極
18 ボンディングワイヤ
20 蛍光体
22 不織布
24 繊維
28 レンズキャップ
30 凹所
34 複合繊維
42 透光性部材
43 枠体


10 Light emitting diode
12 Board
14 LED chip
16a external electrode
16b external electrode
18 Bonding wire
20 phosphor
22 Nonwoven fabric
24 fibers
28 Lens cap
30 recess
34 Composite fiber
42 Translucent material
43 Frame


Claims (3)

基板上に固定されたＬＥＤチップと、該ＬＥＤチップを覆うレンズキャップと、該レンズキャップ内に収納され、蛍光体を担持して成る繊維の集合体とを有し、上記繊維の集合体でＬＥＤチップを覆うように、上記レンズキャップを基板上に固定したことを特徴とする発光ダイオード。   An LED chip fixed on a substrate, a lens cap that covers the LED chip, and a fiber assembly that is accommodated in the lens cap and carries a phosphor, and the LED is formed of the fiber assembly. A light-emitting diode, wherein the lens cap is fixed on a substrate so as to cover a chip. 上記繊維の集合体が不織布であり、該不織布を構成する繊維に蛍光体を担持させたことを特徴とする請求項１に記載の発光ダイオード。   2. The light emitting diode according to claim 1, wherein the aggregate of fibers is a nonwoven fabric, and a phosphor is supported on the fibers constituting the nonwoven fabric. 請求項２に記載の発光ダイオードの製造方法であって、
高融点材料より成る繊維を低融点材料より成る繊維で被覆して形成した複合繊維より成る集積体を形成する工程と、
上記複合繊維を構成する低融点材料より成る繊維の融点より高く、且つ、高融点材料より成る繊維の融点より低い温度で、上記複合繊維の集積体を加熱して低融点材料より成る繊維のみを溶融させ、高融点材料より成る繊維の交差部分を、溶融した低融点材料より成る繊維を介して接着することにより、不織布を形成すると共に、粒子状の蛍光体を、溶融した低融点材料より成る繊維を介して、不織布を構成する繊維に接着する工程と、
を備えることを特徴とする発光ダイオードの製造方法。


A method of manufacturing a light emitting diode according to claim 2,
Forming an assembly of composite fibers formed by coating fibers made of a high melting point material with fibers made of a low melting point material;
Only the fiber made of the low melting point material is heated by heating the composite fiber assembly at a temperature higher than the melting point of the fiber made of the low melting point material constituting the composite fiber and lower than the melting point of the fiber made of the high melting point material. A nonwoven fabric is formed by melting and bonding the intersecting portions of fibers made of a high melting point material through fibers made of a molten low melting point material, and the particulate phosphor is made of a molten low melting point material. Adhering to the fibers constituting the nonwoven fabric through the fibers;
A method for manufacturing a light emitting diode, comprising:


JP2005105576A 2005-04-01 2005-04-01 Light emitting diode Active JP4744913B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005105576A JP4744913B2 (en) 2005-04-01 2005-04-01 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005105576A JP4744913B2 (en) 2005-04-01 2005-04-01 Light emitting diode

Publications (2)

Publication Number Publication Date
JP2006286997A true JP2006286997A (en) 2006-10-19
JP4744913B2 JP4744913B2 (en) 2011-08-10

Family

ID=37408552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005105576A Active JP4744913B2 (en) 2005-04-01 2005-04-01 Light emitting diode

Country Status (1)

Country Link
JP (1) JP4744913B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6359360A (en) * 1986-08-29 1988-03-15 Koito Mfg Co Ltd Super-wide-angle nozzle for head lamp cleaner
KR100986380B1 (en) 2009-11-20 2010-10-08 엘지이노텍 주식회사 Light emitting apparatus
US8506122B2 (en) 2009-11-19 2013-08-13 Lg Innotek Co., Ltd. Lens and light emitting apparatus having the same
JP2015023218A (en) * 2013-07-22 2015-02-02 ローム株式会社 Led lighting device
US9721934B2 (en) 2013-07-22 2017-08-01 Rohm Co., Ltd. LED lighting apparatus
CN107799642A (en) * 2017-10-23 2018-03-13 吴香辉 LED is encapsulated

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001096167A (en) * 1999-09-30 2001-04-10 Toyoda Gosei Co Ltd Photocatalyst component
JP2002126055A (en) * 2000-10-24 2002-05-08 Toyoda Gosei Co Ltd Air cleaner
JP2002289926A (en) * 2001-03-26 2002-10-04 Sanyo Electric Co Ltd White-color indicator
JP2004248524A (en) * 2003-02-18 2004-09-09 Kazuo Kito Weed-proof cloth
JP2004253748A (en) * 2002-12-26 2004-09-09 Okaya Electric Ind Co Ltd Light-emitting diode
JP2004297018A (en) * 2003-03-28 2004-10-21 Okaya Electric Ind Co Ltd Light emitting diode
JP2004356507A (en) * 2003-05-30 2004-12-16 Okaya Electric Ind Co Ltd Light emitting diode with photocatalyst and its manufacturing method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001096167A (en) * 1999-09-30 2001-04-10 Toyoda Gosei Co Ltd Photocatalyst component
JP2002126055A (en) * 2000-10-24 2002-05-08 Toyoda Gosei Co Ltd Air cleaner
JP2002289926A (en) * 2001-03-26 2002-10-04 Sanyo Electric Co Ltd White-color indicator
JP2004253748A (en) * 2002-12-26 2004-09-09 Okaya Electric Ind Co Ltd Light-emitting diode
JP2004248524A (en) * 2003-02-18 2004-09-09 Kazuo Kito Weed-proof cloth
JP2004297018A (en) * 2003-03-28 2004-10-21 Okaya Electric Ind Co Ltd Light emitting diode
JP2004356507A (en) * 2003-05-30 2004-12-16 Okaya Electric Ind Co Ltd Light emitting diode with photocatalyst and its manufacturing method

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6359360A (en) * 1986-08-29 1988-03-15 Koito Mfg Co Ltd Super-wide-angle nozzle for head lamp cleaner
US8506122B2 (en) 2009-11-19 2013-08-13 Lg Innotek Co., Ltd. Lens and light emitting apparatus having the same
US8616729B2 (en) 2009-11-19 2013-12-31 Lg Electronics Inc. Lens and light emitting apparatus having the same
US9885450B2 (en) 2009-11-20 2018-02-06 Lg Innotek Co., Ltd. Light emitting apparatus
KR100986380B1 (en) 2009-11-20 2010-10-08 엘지이노텍 주식회사 Light emitting apparatus
US8395183B2 (en) 2009-11-20 2013-03-12 Lg Innotek Co., Ltd. Light emitting apparatus
US8823048B2 (en) 2009-11-20 2014-09-02 Lg Innotek Co., Ltd. Light emitting apparatus
US9534744B2 (en) 2009-11-20 2017-01-03 Lg Innotek Co., Ltd. Light emitting apparatus
US9638378B2 (en) 2009-11-20 2017-05-02 Lg Innotek Co., Ltd. Light emitting apparatus
US10030823B2 (en) 2009-11-20 2018-07-24 Lg Innotek Co., Ltd. Light emitting apparatus
JP2015023218A (en) * 2013-07-22 2015-02-02 ローム株式会社 Led lighting device
US9837392B2 (en) 2013-07-22 2017-12-05 Rohm Co., Ltd. LED lighting apparatus
US9721934B2 (en) 2013-07-22 2017-08-01 Rohm Co., Ltd. LED lighting apparatus
CN107799642A (en) * 2017-10-23 2018-03-13 吴香辉 LED is encapsulated

Also Published As

Publication number Publication date
JP4744913B2 (en) 2011-08-10

Similar Documents

Publication Publication Date Title
JP2006286999A (en) Light emitting diode and its fabrication process
JP4744913B2 (en) Light emitting diode
JP2009016689A (en) Illuminator
JP4491213B2 (en) Light emitting diode and manufacturing method thereof
JP2010003788A (en) Light-emitting diode and manufacturing method thereof
JP2006286672A (en) Light emitting diode and its fabrication process
JP4698986B2 (en) Light emitting diode and manufacturing method thereof
JP5227093B2 (en) Light emitting diode
JP3117789U (en) Surface light source device
JP2011077214A (en) Led lamp
JP3150457U (en) Color light emitting diode
JP4241095B2 (en) Light emitting diode
JP3117306U (en) Light emitting diode
JP4744853B2 (en) Light emitting diode
JP3159075U (en) LED lamp
JP2010135753A (en) Light emitting diode
JP2004297018A (en) Light emitting diode
JP2006286998A (en) Light emitting diode and its fabrication process
JP4594023B2 (en) Manufacturing method of light emitting diode
JP2006186182A (en) Light emitting diode and its manufacturing method
JP2010212739A (en) Light emitting diode
JP2006108195A (en) Light emitting diode and its manufacturing process
JP2006108511A (en) Light emitting diode and its manufacturing process
JP4594027B2 (en) Manufacturing method of light emitting diode
JP2004296999A (en) Light emitting diode

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080401

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100913

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100921

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101115

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110104

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110401

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20110408

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110510

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110511

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140520

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4744913

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150520

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160520

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250