JP4594027B2 - Manufacturing method of light emitting diode - Google Patents

Manufacturing method of light emitting diode Download PDF

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JP4594027B2
JP4594027B2 JP2004295251A JP2004295251A JP4594027B2 JP 4594027 B2 JP4594027 B2 JP 4594027B2 JP 2004295251 A JP2004295251 A JP 2004295251A JP 2004295251 A JP2004295251 A JP 2004295251A JP 4594027 B2 JP4594027 B2 JP 4594027B2
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phosphor
light
led chip
nonwoven fabric
coating material
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JP2006108508A (en
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龍彦 山田
俊男 嶋田
利道 中村
誠一 高橋
陽弘 加藤
雅晴 若月
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Okaya Electric Industry Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

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Description

この発明は、ＬＥＤチップから発光される紫外線等の光を、所定波長の可視光等の光に波長変換して放射する蛍光体を有する発光ダイオード（ＬＥＤ）の製造方法に係り、特に、蛍光体の量及び表面積を増大させることのできる高輝度な発光ダイオードの製造方法に関する。 The present invention relates to a method of manufacturing a light emitting diode (LED) having a phosphor that radiates light such as ultraviolet rays emitted from an LED chip by converting the wavelength of the light into light such as visible light having a predetermined wavelength. The present invention relates to a method for manufacturing a high-intensity light-emitting diode capable of increasing the amount and surface area of the light-emitting diode .

図８は、蛍光体を有する従来のＬＥＤの一例を示すものであり、該発光ダイオード60は、発光ダイオードチップ搭載用の第１のリードフレーム62の先端部62ａに、その底面から上方に向かって孔径が徐々に拡大する略漏斗形状の凹部を設けると共に該凹部内面を反射面と成してリフレクタ64を形成し、該リフレクタ64の底面に発光ダイオードチップ（以下、ＬＥＤチップと称する）66をＡｇペースト等を介してダイボンドすることにより、上記第１のリードフレーム62と、ＬＥＤチップ66底面の一方の電極（図示せず）とを電気的に接続している。また、第２のリードフレーム68の先端部68ａと、上記ＬＥＤチップ66上面の他方の電極（図示せず）とをボンディングワイヤ70を介して電気的に接続して成る。   FIG. 8 shows an example of a conventional LED having a phosphor. The light-emitting diode 60 is directed upward from the bottom surface to the tip end portion 62a of the first lead frame 62 for mounting the light-emitting diode chip. A substantially funnel-shaped concave portion having a gradually increasing hole diameter is provided, and a reflector 64 is formed by forming the inner surface of the concave portion as a reflective surface. The first lead frame 62 and one electrode (not shown) on the bottom surface of the LED chip 66 are electrically connected by die-bonding via a paste or the like. Further, the tip end portion 68 a of the second lead frame 68 and the other electrode (not shown) on the upper surface of the LED chip 66 are electrically connected via a bonding wire 70.

上記ＬＥＤチップ66の上面及び側面は、リフレクタ64内に充填された透光性エポキシ樹脂等のコーティング材72によって被覆・封止されており、また、上記コーティング材72中には、ＬＥＤチップ66から発光された紫外線等の光を所定波長の可視光等の光に変換する波長変換用の蛍光体74が分散状態で多数混入されている。
さらに、コーティング材72で被覆された上記ＬＥＤチップ66、第１のリードフレーム62の先端部62ａ及び端子部62ｂの上端、第２のリードフレーム68の先端部68ａ及び端子部68ｂの上端は、エポキシ樹脂等より成り、先端に凸レンズ部76を有する透光性の外囲器78によって被覆・封止されている。 The upper surface and the side surface of the LED chip 66 are covered and sealed with a coating material 72 such as a translucent epoxy resin filled in the reflector 64, and the LED chip 66 includes A large number of phosphors 74 for wavelength conversion that convert emitted light such as ultraviolet light into light such as visible light having a predetermined wavelength are mixed in a dispersed state.
Further, the LED chip 66 covered with the coating material 72, the upper ends of the tip portion 62a and the terminal portion 62b of the first lead frame 62, and the upper ends of the tip portion 68a and the terminal portion 68b of the second lead frame 68 are epoxy. It is made of resin or the like, and is covered and sealed by a translucent envelope 78 having a convex lens portion 76 at the tip.

而して、上記第１のリードフレーム62及び第２のリードフレーム68を介してＬＥＤチップ66に電圧が印加されると、ＬＥＤチップ66が発光して紫外線等の光が放射され、この光が上記コーティング材72中の蛍光体74に照射されることにより、所定波長の可視光等の光に波長変換され、波長変換された光が外囲器78の凸レンズ部76で集光されて外部へ放射されるようになっている。   Thus, when a voltage is applied to the LED chip 66 through the first lead frame 62 and the second lead frame 68, the LED chip 66 emits light and emits light such as ultraviolet rays. By irradiating the phosphor 74 in the coating material 72, the wavelength is converted into light such as visible light having a predetermined wavelength, and the wavelength-converted light is condensed by the convex lens portion 76 of the envelope 78 and is transmitted to the outside. It is supposed to be emitted.

ところで、上記蛍光体74から放射される光の輝度は、一般に蛍光体74の量及び表面積に略比例するものであるが、上記従来のＬＥＤ60にあっては、リフレクタ64内に充填したコーティング材72中に蛍光体74を混入していたことから、混入できる蛍光体74の量には限界があった。   Incidentally, the brightness of light emitted from the phosphor 74 is generally proportional to the amount and surface area of the phosphor 74. In the conventional LED 60, the coating material 72 filled in the reflector 64 is used. Since the phosphor 74 was mixed therein, there was a limit to the amount of the phosphor 74 that could be mixed.

この発明は、従来の上記問題点に鑑みて案出されたものであり、その目的とするところは、蛍光体の量及び表面積を増大させることのできる高輝度な発光ダイオードの製造方法を実現することにある。 The present invention has been devised in view of the conventional problems described above, and an object of the present invention is to realize a method for manufacturing a high-intensity light-emitting diode capable of increasing the amount and surface area of a phosphor. There is.

上記の目的を達成するため、本発明に係る発光ダイオードの製造方法は、
蛍光体を励起させる波長の光を放射するＬＥＤチップを、筒状の不織布で囲繞すると共に、該不織布を構成する繊維に蛍光体を担持させ、さらに、上記ＬＥＤチップを蛍光体が混入されたコーティング材で封止した発光ダイオードの製造方法であって、
ＬＥＤチップを、筒状の不織布で囲繞する工程と、
蛍光体が混入された未硬化状態のコーティング材を、筒状の不織布内に充填することにより、ＬＥＤチップを蛍光体の混入された未硬化状態のコーティング材で被覆すると共に、蛍光体の混入された未硬化状態のコーティング材を不織布に含浸させる工程と、
上記コーティング材を硬化させることにより、ＬＥＤチップを蛍光体の混入されたコーティング材で封止すると共に、不織布を構成する繊維に蛍光体を担持させる工程と、
を備えることを特徴とする。 In order to achieve the above object, a method of manufacturing a light emitting diode according to the present invention includes:
A LED chip that emits light of a wavelength that excites the phosphor is surrounded by a cylindrical nonwoven fabric , and the phosphor is supported on the fibers constituting the nonwoven fabric , and the LED chip is coated with the phosphor. A method of manufacturing a light emitting diode sealed with a material,
Surrounding the LED chip with a cylindrical nonwoven fabric;
By filling the non-cured coating material mixed with the phosphor into a cylindrical nonwoven fabric, the LED chip is covered with the uncured coating material mixed with the phosphor and the phosphor is mixed. Impregnating the nonwoven fabric with the uncured coating material;
By curing the coating material, the LED chip is sealed with the phosphor-mixed coating material, and the phosphor is supported on the fibers constituting the nonwoven fabric;
It is characterized by providing.

本発明の上記方法で製造される発光ダイオードにあっては、ＬＥＤチップを封止するコーティング材中に蛍光体を混入すると共に、ＬＥＤチップを囲繞し、単位体積当たりの繊維の表面積が極めて大きい不織布を構成する繊維にも蛍光体を担持させたことから、従来の発光ダイオード60の如く、リフレクタ64内に充填したコーティング材72中に蛍光体74を混入するだけの場合に比べ、蛍光体の量及び表面積を飛躍的に増大させることができる。 In the light emitting diode manufactured by the above method of the present invention, the phosphor is mixed in the coating material for sealing the LED chip, surrounds the LED chip, and has a very large surface area of fibers per unit volume. Since the phosphors are also carried on the fibers constituting the phosphor, the amount of the phosphors compared to the case where the phosphors 74 are simply mixed in the coating material 72 filled in the reflector 64 as in the conventional light emitting diode 60. And the surface area can be dramatically increased.

本発明の発光ダイオードの製造方法にあっては、ＬＥＤチップを囲繞する筒状の不織布内に、蛍光体が混入された未硬化状態のコーティング材を充填することにより、蛍光体の混入されたコーティング材によるＬＥＤチップの封止と、不織布を構成する繊維への蛍光体の担持とを略同時に行うことができるので、極めて製造容易である。   In the method of manufacturing a light emitting diode according to the present invention, a phosphor-mixed coating is obtained by filling an uncured coating material mixed with a phosphor into a cylindrical nonwoven fabric surrounding the LED chip. Since the sealing of the LED chip with the material and the supporting of the phosphor on the fibers constituting the nonwoven fabric can be performed substantially simultaneously, it is extremely easy to manufacture.

以下、図面に基づき、本発明に係る発光ダイオードの実施形態を説明する。
図１は、本発明に係る発光ダイオード10を示すものであり、該発光ダイオード10は、樹脂やセラミック等の絶縁材料より成る基板12上に、ＬＥＤチップ14を接続・固定して成る。該ＬＥＤチップ14は、窒化ガリウム系半導体結晶等で構成されており、後述する蛍光体を励起させる波長の紫外線や青色可視光等の光を発光するものである。
また、上記基板12の表面から側面を経て裏面にまで延設された一対の外部電極16ａ，16ｂが相互に絶縁された状態で形成されている。 Hereinafter, an embodiment of a light emitting diode according to the present invention will be described with reference to the drawings.
FIG. 1 shows a light emitting diode 10 according to the present invention. The light emitting diode 10 is formed by connecting and fixing an LED chip 14 on a substrate 12 made of an insulating material such as resin or ceramic. The LED chip 14 is composed of a gallium nitride semiconductor crystal or the like, and emits light such as ultraviolet light or blue visible light having a wavelength that excites a phosphor to be described later.
A pair of external electrodes 16a and 16b extending from the front surface of the substrate 12 through the side surface to the back surface are formed in a state of being insulated from each other.

上記ＬＥＤチップ14上面の一方の電極（図示せず）は、ボンディングワイヤ18を介して、一方の外部電極16ａに接続されると共に、ＬＥＤチップ14上面の他方の電極（図示せず）は、ボンディングワイヤ18を介して、他方の外部電極16ｂに接続されている。   One electrode (not shown) on the upper surface of the LED chip 14 is connected to one external electrode 16a via a bonding wire 18, and the other electrode (not shown) on the upper surface of the LED chip 14 is bonded. The wire 18 is connected to the other external electrode 16b.

上記ＬＥＤチップ14及びボンディングワイヤ18は、蛍光体20を担持して成る繊維の集合体としての円筒状の不織布22（図２参照）で囲繞されている。
不織布22は、図３及び図４に示すように、多数の繊維24が立体的に絡み合って形成されるものであり、繊維24間には多数の空隙26（図４参照）が形成されており、また、多数の繊維24が立体的に絡み合っているため、単位体積当たりの繊維24の表面積が極めて大きいものである。蛍光体20は、不織布22を構成する繊維24の表面に被着・担持されているものであり、図５に示すように、繊維24の表面に緻密な層状態で被着・担持される場合の他、繊維24表面の蛍光体20の粒子間に微小な隙間が存在する状態で粗く被着・担持される場合もある（図６参照）。
尚、不織布22を構成する繊維24の繊維密度や、不織布22の厚さ、目付等を適宜調整することにより、不織布22を構成する繊維24の総表面積を任意に増減可能である。 The LED chip 14 and the bonding wire 18 are surrounded by a cylindrical nonwoven fabric 22 (see FIG. 2) as an assembly of fibers formed by supporting the phosphor 20.
As shown in FIGS. 3 and 4, the non-woven fabric 22 is formed by three-dimensionally intertwining a large number of fibers 24, and a large number of voids 26 (see FIG. 4) are formed between the fibers 24. In addition, since a large number of fibers 24 are intertwined in three dimensions, the surface area of the fibers 24 per unit volume is extremely large. The phosphor 20 is attached and supported on the surface of the fiber 24 constituting the nonwoven fabric 22, and is applied and supported on the surface of the fiber 24 in a dense layer state as shown in FIG. In addition, there may be cases where the fine particles are deposited and supported in a state where there are minute gaps between the particles of the phosphor 20 on the surface of the fiber 24 (see FIG. 6).
Note that the total surface area of the fibers 24 constituting the nonwoven fabric 22 can be arbitrarily increased or decreased by appropriately adjusting the fiber density of the fibers 24 constituting the nonwoven fabric 22, the thickness of the nonwoven fabric 22, the basis weight, and the like.

上記繊維24は、ナイロン、ポリエステル、アクリル、ポリプロピレン、ポリ塩化ビニル等の樹脂繊維、レーヨン等のセルロース系の化学繊維、ガラス繊維、金属繊維等の短繊維から成り、その直径は５〜２０μｍ、長さは０．５〜２０mm程度である。
尚、長さが５０〜１００mm程度の長繊維から成る繊維24を用いることも勿論可能である。 The fibers 24 are made of resin fibers such as nylon, polyester, acrylic, polypropylene, and polyvinyl chloride, cellulosic chemical fibers such as rayon, short fibers such as glass fibers and metal fibers, and the diameter thereof is 5 to 20 μm and long. The thickness is about 0.5 to 20 mm.
Of course, it is also possible to use fibers 24 made of long fibers having a length of about 50 to 100 mm.

上記蛍光体20は、紫外線等の光の照射を受けると、この光を所定波長の可視光等の光に波長変換するものであり、例えば以下の組成のものを用いることができる。
紫外線等の光を赤色可視光に変換する赤色発光用の蛍光体20として、Ｍ２Ｏ２Ｓ：Ｅｕ（Ｍは、Ｌａ、Ｇｄ、Ｙの何れか１種）、0.5ＭｇＦ２・3.5ＭｇＯ・ＧｅＯ２：Ｍｎ、2ＭｇＯ・2ＬｉＯ２・Ｓｂ２Ｏ３：Ｍｎ、Ｙ（Ｐ，Ｖ）Ｏ4：Ｅｕ、ＹＶＯ4：Ｅｕ、（ＳｒＭｇ）3（ＰＯ4）：Ｓｎ、Ｙ２Ｏ３：Ｅｕ、ＣａＳｉＯ３：Ｐｂ，Ｍｎ等がある。
また、紫外線等の光を緑色可視光に変換する緑色発光用の蛍光体20として、ＢａＭｇ２Ａｌ１６Ｏ２７：Ｅｕ，Ｍｎ、Ｚｎ２ＳｉＯ4：Ｍｎ、（Ｃｅ，Ｔｂ，Ｍｎ）ＭｇＡｌ１１Ｏ１９、ＬａＰＯ4：Ｃｅ，Ｔｂ、（Ｃｅ，Ｔｂ）ＭｇＡｌ１１Ｏ１９、Ｙ２ＳｉＯ５：Ｃｅ，Ｔｂ、ＺｎＳ：Ｃｕ，Ａｌ、ＺｎＳ：Ｃｕ，Ａｕ，Ａｌ、（Ｚｎ，Ｃｄ）Ｓ：Ｃｕ，Ａｌ、ＳｒＡｌ２Ｏ４：Ｅｕ、ＳｒＡｌ２Ｏ４：Ｅｕ，Ｄｙ、Ｓｒ４Ａｌ１４Ｏ２５：Ｅｕ，Ｄｙ、Ｙ３Ａｌ５Ｏ１２：Ｔｂ、Ｙ３（Ａｌ，Ｇａ）５Ｏ１２：Ｔｂ、Ｙ３Ａｌ５Ｏ１２：Ｃｅ、Ｙ３（Ａｌ，Ｇａ）５Ｏ１２：Ｃｅ等がある。
更に、紫外線等の光を青色可視光に変換する青色発光用の蛍光体20として、(ＳｒＣａＢａ)５(ＰＯ４)３Ｃｌ：Ｅｕ、ＢａＭｇ２Ａｌ１６Ｏ２７：Ｅｕ、（ＳｒＭｇ）２Ｐ２Ｏ7：Ｅｕ、Ｓｒ２Ｐ２Ｏ7：Ｅｕ、Ｓｒ２Ｐ２Ｏ７：Ｓｎ、Ｓｒ５（ＰＯ4）３Ｃｌ：Ｅｕ、ＢａＭｇ２Ａｌ１６Ｏ２７：Ｅｕ、ＣａＷＯ4、ＣａＷＯ4：Ｐｂ青色蛍光体、ＺｎＳ：Ａｇ，Ｃｌ、ＺｎＳ：Ａｇ，Ａｌ、(Ｓｒ，Ｃａ，Ｍｇ)１０(ＰＯ４)６Ｃｌ２：Ｅｕ等がある。
上記赤色発光用の蛍光体20、緑色発光用の蛍光体20、青色発光用の蛍光体20を適宜選択・混合して用いることで、種々の色の発色が可能である。
また、青色の可視光を放射するＬＥＤチップ16を用いて白色光を得る場合には、ＬＥＤチップ16から放射される光を補色としての黄色可視光に変換する黄色発光用の蛍光体24として、Ｙ３Ａｌ５Ｏ１２：Ｃｅ、ＹＢＯ３：Ｃｅ、ＢａＭｇＡｌ１０Ｏ１７：Ｅｕ，Ｍｎ、（Ｓｒ，Ｃａ，Ｂａ）（Ａｌ，Ｇａ）２Ｓ４：Ｅｕ、Ｂａ２ＳｉＯ４：Ｅｕ、（Ｓｒ，Ｂａ）２ＳｉＯ４：Ｅｕ、ＳｉＡｌＯＮ：Ｅｕ等がある。
尚、蛍光体20は、有機、無機の蛍光染料や、有機、無機の蛍光顔料を含むものである。 When the phosphor 20 is irradiated with light such as ultraviolet rays, the phosphor 20 converts the wavelength of the light into light such as visible light having a predetermined wavelength. For example, a phosphor having the following composition can be used.
As a phosphor 20 for red light emission that converts light such as ultraviolet rays into red visible light, M 2 O 2 S: Eu (M is one of La, Gd, and Y), 0.5 MgF 2 .3.5MgO. GeO 2: Mn, 2MgO · 2LiO 2 · Sb 2 O 3: Mn, Y (P, V) O 4: Eu, YVO 4: Eu, (SrMg) 3 (PO 4): Sn, Y 2 O 3: Eu , CaSiO 3 : Pb, Mn and the like.
Further, as a phosphor 20 for green light emission that converts light such as ultraviolet light into green visible light, BaMg 2 Al 16 O 27 : Eu, Mn, Zn 2 SiO 4 : Mn, (Ce, Tb, Mn) MgAl 11 O 19 , LaPO 4 : Ce, Tb, (Ce, Tb) MgAl 11 O 19 , Y 2 SiO 5 : Ce, Tb, ZnS: Cu, Al, ZnS: Cu, Au, Al, (Zn, Cd) S: Cu , Al, SrAl 2 O 4 : Eu, SrAl 2 O 4 : Eu, Dy, Sr 4 Al 14 O 25 : Eu, Dy, Y 3 Al 5 O 12 : Tb, Y 3 (Al, Ga) 5 O 12 : There are Tb, Y 3 Al 5 O 12 : Ce, Y 3 (Al, Ga) 5 O 12 : Ce, and the like.
Furthermore, as a phosphor 20 for blue light emission that converts light such as ultraviolet rays into blue visible light, (SrCaBa) 5 (PO 4 ) 3 Cl: Eu, BaMg 2 Al 16 O 27 : Eu, (SrMg) 2 P 2 O 7 : Eu, Sr 2 P 2 O 7 : Eu, Sr 2 P 2 O 7 : Sn, Sr 5 (PO 4 ) 3 Cl: Eu, BaMg 2 Al 16 O 27 : Eu, CaWO 4 , CaWO 4 : Pb There are blue phosphors, ZnS: Ag, Cl, ZnS: Ag, Al, (Sr, Ca, Mg) 10 (PO 4 ) 6 Cl 2 : Eu, and the like.
Various colors can be generated by appropriately selecting and mixing the phosphor 20 for red light emission, the phosphor 20 for green light emission, and the phosphor 20 for blue light emission.
Further, when obtaining white light using the LED chip 16 that emits blue visible light, as the phosphor 24 for yellow light emission that converts the light emitted from the LED chip 16 into yellow visible light as a complementary color, Y 3 Al 5 O 12 : Ce, YBO 3 : Ce, BaMgAl 10 O 17 : Eu, Mn, (Sr, Ca, Ba) (Al, Ga) 2 S 4 : Eu, Ba 2 SiO 4 : Eu, (Sr , Ba) 2 SiO 4 : Eu, SiAlON: Eu, and the like.
The phosphor 20 includes organic and inorganic fluorescent dyes and organic and inorganic fluorescent pigments.

上記ＬＥＤチップ14は、円筒状の不織布22内に充填したエポキシ樹脂等より成る透光性のコーティング材27で被覆・封止されており、該コーティング材27中には、蛍光体20が分散状態で多数混入されている。
さらに、ＬＥＤチップ16及び不織布22は、基板12上に配置された所定高さを備えた枠部材28で囲繞されていると共に、該枠部材28内にエポキシ樹脂、シリコン樹脂、アクリル樹脂等の透光性材料を充填して形成された透光性の蓋部材30によって封止されている。 The LED chip 14 is covered and sealed with a translucent coating material 27 made of an epoxy resin or the like filled in a cylindrical nonwoven fabric 22, and the phosphor 20 is dispersed in the coating material 27. Many are mixed in.
Further, the LED chip 16 and the nonwoven fabric 22 are surrounded by a frame member 28 having a predetermined height disposed on the substrate 12, and an epoxy resin, a silicon resin, an acrylic resin, or the like is permeable to the frame member 28. It is sealed by a translucent lid member 30 formed by filling with a light material.

本発明の発光ダイオード10にあっては、一対の外部電極16ａ，16ｂを介してＬＥＤチップ14に電圧が印加されると、ＬＥＤチップ14が発光して、上記蛍光体20を励起させる紫外線や可視光等の光が放射される。
この光が、コーティング材27中に混入された蛍光体20に照射されると共に、光の一部はコーティング材27を透過して不織布22に担持された蛍光体20に照射され、所定波長の可視光等の光に波長変換された後、透光性の蓋部材30を透過して外部へ放射されるのである。 In the light emitting diode 10 of the present invention, when a voltage is applied to the LED chip 14 through the pair of external electrodes 16a and 16b, the LED chip 14 emits light, and ultraviolet light or visible light that excites the phosphor 20 is visible. Light such as light is emitted.
This light is irradiated to the phosphor 20 mixed in the coating material 27, and a part of the light is transmitted to the phosphor 20 carried on the nonwoven fabric 22 through the coating material 27, and is visible with a predetermined wavelength. After wavelength conversion to light such as light, the light passes through the translucent lid member 30 and is emitted to the outside.

而して、本発明の発光ダイオード10にあっては、ＬＥＤチップ14を封止するコーティング材27中に蛍光体20を混入すると共に、ＬＥＤチップ14を囲繞し、単位体積当たりの繊維24の表面積が極めて大きい円筒状の不織布22を構成する繊維24の表面にも蛍光体20を担持せしめたことから、従来の発光ダイオード60の如く、リフレクタ64内に充填したコーティング材72中に蛍光体74を混入するだけの場合に比べ、蛍光体20の量及び表面積を飛躍的に増大させることができる。   Thus, in the light emitting diode 10 of the present invention, the phosphor 20 is mixed in the coating material 27 that seals the LED chip 14, and the LED chip 14 is surrounded by the surface area of the fiber 24 per unit volume. Since the phosphor 20 is also carried on the surface of the fiber 24 constituting the cylindrical nonwoven fabric 22 having an extremely large size, the phosphor 74 is placed in the coating material 72 filled in the reflector 64 like the conventional light emitting diode 60. Compared with the case of just mixing, the amount and surface area of the phosphor 20 can be dramatically increased.

尚、上記不織布22は、円筒状に限定されるものではなく、角筒状であっても良く、
或いは、図７に示すように、その下端から上端に向かって孔径が徐々に拡大する略漏斗形状の筒状体であっても良い。要するに、ＬＥＤチップ14が筒状の不織布22で囲繞されていれば足りる。 The nonwoven fabric 22 is not limited to a cylindrical shape, and may be a rectangular tube shape,
Alternatively, as shown in FIG. 7, it may be a substantially funnel-shaped tubular body whose hole diameter gradually increases from the lower end toward the upper end. In short, it is sufficient if the LED chip 14 is surrounded by the tubular nonwoven fabric 22.

以下、本発明の発光ダイオード10において、不織布22に蛍光体20を担持させると共に、ＬＥＤチップ14を蛍光体20が混入されたコーティング材27で被覆・封止する方法について説明する。
先ず、ＬＥＤチップ14及びボンディングワイヤ18を囲繞するように、蛍光体20が担持されていない円筒状の不織布22を基板12上に載置する。
次に、蛍光体20が混入された未硬化状態のコーティング材27を、円筒状の不織布22内に所定量充填する。この結果、蛍光体20の混入された未硬化状態のコーティング材27によってＬＥＤチップ14が被覆されると共に、蛍光体20の混入された未硬化状態のコーティング材27が、不織布22に含浸される。
その後、コーティング材27を硬化させれば、ＬＥＤチップ14が蛍光体20の混入されたコーティング材27で封止されると共に、不織布22を構成する繊維24の表面に蛍光体20が担持される。
上記方法にあっては、ＬＥＤチップ14を囲繞する円筒状の不織布22内に、蛍光体20が混入された未硬化状態のコーティング材27を充填することにより、蛍光体20の混入されたコーティング材27によるＬＥＤチップ16の封止と、不織布22を構成する繊維24の表面への蛍光体20の担持とを略同時に行うことができるので、極めて製造容易である。 Hereinafter, in the light-emitting diode 10 of the present invention, a method of supporting the phosphor 20 on the nonwoven fabric 22 and covering and sealing the LED chip 14 with the coating material 27 mixed with the phosphor 20 will be described.
First, a cylindrical nonwoven fabric 22 on which the phosphor 20 is not carried is placed on the substrate 12 so as to surround the LED chip 14 and the bonding wire 18.
Next, a predetermined amount of the uncured coating material 27 mixed with the phosphor 20 is filled in the cylindrical nonwoven fabric 22. As a result, the LED chip 14 is covered with the uncured coating material 27 mixed with the phosphor 20, and the nonwoven fabric 22 is impregnated with the uncured coating material 27 mixed with the phosphor 20.
Thereafter, when the coating material 27 is cured, the LED chip 14 is sealed with the coating material 27 mixed with the phosphor 20, and the phosphor 20 is supported on the surface of the fibers 24 constituting the nonwoven fabric 22.
In the above method, the non-cured coating material 27 mixed with the phosphor 20 is filled in the cylindrical non-woven fabric 22 surrounding the LED chip 14, so that the coating material mixed with the phosphor 20 is obtained. Since the LED chip 16 can be sealed by 27 and the phosphor 20 can be supported on the surface of the fibers 24 constituting the nonwoven fabric 22, it can be manufactured very easily.

上記においては、繊維の集合体として、不織布22を用いた場合を例に挙げて説明したが、本発明はこれに限定されるものではなく、多数の繊維を織り込んで形成した織布を用い、該織布を構成する繊維に蛍光体を担持させても良い。   In the above, the case where the nonwoven fabric 22 is used has been described as an example of the fiber assembly, but the present invention is not limited to this, and a woven fabric formed by weaving a large number of fibers is used. A phosphor may be supported on the fibers constituting the woven fabric.

本発明に係る発光ダイオードを模式的に示す概略断面図である。It is a schematic sectional drawing which shows typically the light emitting diode which concerns on this invention. 蛍光体を担持した不織布を模式的に示すに斜視図である。1 is a perspective view schematically showing a nonwoven fabric carrying a phosphor. 蛍光体を担持した不織布を模式的に示す部分拡大図である。It is the elements on larger scale which show typically the nonwoven fabric which carry | supported fluorescent substance. 不織布を構成する繊維を模式的に示す拡大図である。It is an enlarged view which shows typically the fiber which comprises a nonwoven fabric. 不織布を構成する繊維を模式的に示す断面図である。It is sectional drawing which shows typically the fiber which comprises a nonwoven fabric. 不織布を構成する繊維を模式的に示す断面図である。It is sectional drawing which shows typically the fiber which comprises a nonwoven fabric. 蛍光体を担持した不織布を模式的に示すに斜視図である。1 is a perspective view schematically showing a nonwoven fabric carrying a phosphor. 従来の発光ダイオードを模式的に示す概略断面図である。It is a schematic sectional drawing which shows the conventional light emitting diode typically.

10 発光ダイオード
12 基板
14 ＬＥＤチップ
16ａ外部電極
16ｂ外部電極
18 ボンディングワイヤ
20 蛍光体
22 不織布
24 繊維
27 コーティング材
28 枠部材
30 蓋部材 10 Light emitting diode
12 Board
14 LED chip
16a external electrode
16b external electrode
18 Bonding wire
20 phosphor
22 Nonwoven fabric
24 fibers
27 Coating material
28 Frame member
30 Lid member

Claims (1)

蛍光体を励起させる波長の光を放射するＬＥＤチップを、筒状の不織布で囲繞すると共に、該不織布を構成する繊維に蛍光体を担持させ、さらに、上記ＬＥＤチップを蛍光体が混入されたコーティング材で封止した発光ダイオードの製造方法であって、
ＬＥＤチップを、筒状の不織布で囲繞する工程と、
蛍光体が混入された未硬化状態のコーティング材を、筒状の不織布内に充填することにより、ＬＥＤチップを蛍光体の混入された未硬化状態のコーティング材で被覆すると共に、蛍光体の混入された未硬化状態のコーティング材を不織布に含浸させる工程と、
上記コーティング材を硬化させることにより、ＬＥＤチップを蛍光体の混入されたコーティング材で封止すると共に、不織布を構成する繊維に蛍光体を担持させる工程と、
を備えることを特徴とする発光ダイオードの製造方法。 A LED chip that emits light of a wavelength that excites the phosphor is surrounded by a cylindrical nonwoven fabric , and the phosphor is supported on the fibers constituting the nonwoven fabric , and the LED chip is coated with the phosphor. A method of manufacturing a light emitting diode sealed with a material,
Surrounding the LED chip with a cylindrical nonwoven fabric;
By filling the non-cured coating material mixed with the phosphor into a cylindrical nonwoven fabric, the LED chip is covered with the uncured coating material mixed with the phosphor and the phosphor is mixed. Impregnating the nonwoven fabric with the uncured coating material;
By curing the coating material, the LED chip is sealed with the phosphor-mixed coating material, and the phosphor is supported on the fibers constituting the nonwoven fabric;
A method for manufacturing a light emitting diode, comprising:
JP2004295251A 2004-10-07 2004-10-07 Manufacturing method of light emitting diode Expired - Fee Related JP4594027B2 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000019356A (en) * 1998-06-29 2000-01-21 Tomoegawa Paper Co Ltd Optical connecting parts and their manufacture
JP2003124521A (en) * 2001-10-09 2003-04-25 Rohm Co Ltd Semiconductor light emitting device with case

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000019356A (en) * 1998-06-29 2000-01-21 Tomoegawa Paper Co Ltd Optical connecting parts and their manufacture
JP2003124521A (en) * 2001-10-09 2003-04-25 Rohm Co Ltd Semiconductor light emitting device with case

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