JP4744853B2 - Light emitting diode - Google Patents

Light emitting diode Download PDF

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JP4744853B2
JP4744853B2 JP2004337500A JP2004337500A JP4744853B2 JP 4744853 B2 JP4744853 B2 JP 4744853B2 JP 2004337500 A JP2004337500 A JP 2004337500A JP 2004337500 A JP2004337500 A JP 2004337500A JP 4744853 B2 JP4744853 B2 JP 4744853B2
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light
phosphor
led chip
emitting diode
nonwoven fabric
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JP2006147925A (en
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龍彦 山田
俊男 嶋田
利道 中村
誠一 高橋
陽弘 加藤
雅晴 若月
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Okaya Electric Industry Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Description

この発明は、LEDチップから発光される紫外線等の光を、所定波長の可視光等の光に波長変換して放射する蛍光体を有する発光ダイオード(LED)及びその製造方法に係り、特に、蛍光体で波長変換された光の取出し効率を向上させることができると共に蛍光体の量及び表面積を増大させることのできる高輝度な発光ダイオードに関する。   The present invention relates to a light-emitting diode (LED) having a phosphor that emits light such as ultraviolet light emitted from an LED chip by converting the light into light such as visible light having a predetermined wavelength, and a method of manufacturing the same. The present invention relates to a high-intensity light emitting diode capable of improving the extraction efficiency of light wavelength-converted by a body and increasing the amount and surface area of a phosphor.

図8は、蛍光体を有する従来のLEDの一例を示すものであり、該発光ダイオード60は、発光ダイオードチップ搭載用の第1のリードフレーム62の先端部62aに、その底面から上方に向かって孔径が徐々に拡大する略漏斗形状の凹部を設けると共に該凹部内面を反射面と成してリフレクタ64を形成し、該リフレクタ64の底面に発光ダイオードチップ(以下、LEDチップと称する)66をAgペースト等を介してダイボンドすることにより、上記第1のリードフレーム62と、LEDチップ66底面の一方の電極(図示せず)とを電気的に接続している。また、第2のリードフレーム68の先端部68aと、上記LEDチップ66上面の他方の電極(図示せず)とをボンディングワイヤ70を介して電気的に接続して成る。   FIG. 8 shows an example of a conventional LED having a phosphor. The light emitting diode 60 is directed upward from the bottom surface to the tip end portion 62a of the first lead frame 62 for mounting the light emitting diode chip. A concave portion having a substantially funnel shape with a gradually increasing hole diameter is provided, and a reflector 64 is formed by forming the inner surface of the concave portion as a reflecting surface. A light emitting diode chip (hereinafter referred to as an LED chip) 66 is formed on the bottom surface of the reflector 64 with Ag. The first lead frame 62 and one electrode (not shown) on the bottom surface of the LED chip 66 are electrically connected by die-bonding via a paste or the like. Further, the tip end portion 68 a of the second lead frame 68 and the other electrode (not shown) on the upper surface of the LED chip 66 are electrically connected via a bonding wire 70.

上記LEDチップ66の上面及び側面は、リフレクタ64内に充填された透光性エポキシ樹脂等のコーティング材72によって被覆・封止されており、また、上記コーティング材72中には、LEDチップ66から発光された紫外線等の光を所定波長の可視光等の光に変換する波長変換用の蛍光体74が分散状態で多数混入されている。
さらに、コーティング材72で被覆された上記LEDチップ66、第1のリードフレーム62の先端部62a及び端子部62bの上端、第2のリードフレーム68の先端部68a及び端子部68bの上端は、エポキシ樹脂等より成り、先端に凸レンズ部76を有する透光性の外囲器78によって被覆・封止されている。
The upper surface and the side surface of the LED chip 66 are covered and sealed with a coating material 72 such as a translucent epoxy resin filled in the reflector 64, and the LED chip 66 includes A large number of phosphors 74 for wavelength conversion that convert emitted light such as ultraviolet rays into light such as visible light having a predetermined wavelength are mixed in a dispersed state.
Further, the LED chip 66 covered with the coating material 72, the upper ends of the tip portion 62a and the terminal portion 62b of the first lead frame 62, and the upper ends of the tip portion 68a and the terminal portion 68b of the second lead frame 68 are epoxy. It is made of resin or the like, and is covered and sealed by a translucent envelope 78 having a convex lens portion 76 at the tip.

而して、上記第1のリードフレーム62及び第2のリードフレーム68を介してLEDチップ66に電圧が印加されると、LEDチップ66が発光して紫外線等の光が放射され、この光が上記コーティング材72中の蛍光体74に照射されることにより、所定波長の可視光等の光に波長変換され、波長変換された光が外囲器78の凸レンズ部76で集光されて外部へ放射されるようになっている。   Thus, when a voltage is applied to the LED chip 66 through the first lead frame 62 and the second lead frame 68, the LED chip 66 emits light and emits light such as ultraviolet rays. By irradiating the phosphor 74 in the coating material 72, the wavelength is converted into light such as visible light having a predetermined wavelength, and the wavelength-converted light is condensed by the convex lens portion 76 of the envelope 78 and is transmitted to the outside. It is supposed to be emitted.

ところで、上記従来のLED60にあっては、蛍光体74で波長変換された光は、コーティング材72中の蛍光体74を透過する透過光となるため、コーティング材72内部を透過してコーティング材72外部へ出射するまでの間に、その一部が蛍光体74によって吸収(自己吸収)されてしまい、光の取出し効率が良好ではなかった。
また、上記蛍光体74から放射される光の輝度は、一般に蛍光体74の量及び表面積に略比例するものであるが、上記従来のLED60にあっては、リフレクタ64内に充填したコーティング材72中に蛍光体74を混入していたことから、混入できる蛍光体74の量には限界があると共に、透過光の場合には、蛍光体74の量・膜厚が一定以上となると自己吸収の影響が大きくなって輝度低下を生じていた。
By the way, in the conventional LED 60, the light converted in wavelength by the phosphor 74 becomes transmitted light that passes through the phosphor 74 in the coating material 72. A part of the light was absorbed (self-absorbed) by the phosphor 74 before being emitted to the outside, and the light extraction efficiency was not good.
The brightness of the light emitted from the phosphor 74 is generally proportional to the amount and surface area of the phosphor 74. In the conventional LED 60, the coating material 72 filled in the reflector 64 is used. Since the amount of the phosphor 74 that can be mixed is limited, the amount of the phosphor 74 that can be mixed is limited. The effect was increased, resulting in a decrease in luminance.

この発明は、従来の上記問題点に鑑みて案出されたものであり、その目的とするところは、蛍光体で波長変換された光の取出し効率を向上させることができると共に蛍光体の量及び表面積を増大させることのできる高輝度な発光ダイオードを実現することにある。   The present invention has been devised in view of the above-described conventional problems, and the object of the present invention is to improve the extraction efficiency of light wavelength-converted by the phosphor, and the amount of the phosphor and The object is to realize a high-intensity light-emitting diode capable of increasing the surface area.

上記の目的を達成するため、本発明に係る発光ダイオードは、
蛍光体を励起させる波長の光を放射するLEDチップを、多数の繊維が立体的に絡み合って形成された不織布で覆うと共に、該不織布を構成する繊維に蛍光体を担持させたことを特徴とする。
In order to achieve the above object, a light-emitting diode according to the present invention includes:
An LED chip that emits light having a wavelength that excites a phosphor is covered with a nonwoven fabric formed by three-dimensionally intertwining a large number of fibers, and the phosphor is supported on the fibers constituting the nonwoven fabric. .

本発明の発光ダイオードにあっては、LEDチップを、多数の繊維が立体的に絡み合って形成された不織布で覆い、該不織布を構成する繊維に蛍光体を担持させたことから、蛍光体で波長変換される光を、蛍光体で反射された反射光として取り出すことができる。このため、蛍光体で波長変換される光を透過光として取り出していた従来の発光ダイオード60に比べ、光の取出し効率が向上し、高輝度化を図ることができる。しかも、LEDチップが不織布で覆われているので、LEDチップから放射されたほぼ全ての光を、蛍光体を担持した不織布に照射することができる。 In the light emitting diode of the present invention, the LED chip is covered with a non-woven fabric formed by three-dimensionally intertwining many fibers, and the phosphor is supported on the fibers constituting the non-woven fabric. The converted light can be extracted as reflected light reflected by the phosphor. For this reason, the light extraction efficiency is improved and higher luminance can be achieved as compared with the conventional light emitting diode 60 in which the light whose wavelength is converted by the phosphor is extracted as transmitted light. Moreover, since the LED chip is covered with the nonwoven fabric, almost all the light emitted from the LED chip can be applied to the nonwoven fabric carrying the phosphor.

また、本発明の発光ダイオードは、単位体積当たりの繊維の表面積が極めて大きい不織布を構成する繊維に蛍光体を担持させたことから、従来の発光ダイオード60の如く、リフレクタ64内に充填したコーティング材72中に蛍光体74を混入した場合に比べ、蛍光体の量及び表面積を飛躍的増大させることができる。
尚、本発明の発光ダイオードは、蛍光体で波長変換される光を反射光として取り出しているため、蛍光体の量が増大しても、光を透過光として取り出している従来の発光ダイオード60の如く、蛍光体による光の自己吸収に起因する輝度低下を生じることがない。
Further, since the light emitting diode of the present invention has the phosphor supported on the fiber constituting the nonwoven fabric having a very large surface area of the fiber per unit volume, the coating material filled in the reflector 64 like the conventional light emitting diode 60 compared with the case where the phosphor 74 mixed in 72, it is possible to dramatically increase the amount and surface area of the phosphor.
Since the light emitting diode of the present invention takes out the light whose wavelength is converted by the phosphor as reflected light, the light emitting diode of the conventional light emitting diode 60 that takes out the light as transmitted light even if the amount of the phosphor increases. As described above, the luminance does not decrease due to self-absorption of light by the phosphor.

以下、図面に基づき、本発明に係る発光ダイオードの実施形態を説明する。
図1は、本発明に係る第1の発光ダイオード10を示すものであり、該第1の発光ダイオード10は、樹脂やセラミック等の絶縁材料より成る基板12上に、LEDチップ14を接続・固定して成る。該LEDチップ14は、窒化ガリウム系半導体結晶等で構成されており、後述する蛍光体を励起させる波長の紫外線や青色可視光等の光を発光するものである。
また、上記基板12の表面から側面を経て裏面にまで延設された一対の外部電極16a,16bが相互に絶縁された状態で形成されている。
Hereinafter, an embodiment of a light emitting diode according to the present invention will be described with reference to the drawings.
FIG. 1 shows a first light emitting diode 10 according to the present invention. The first light emitting diode 10 connects and fixes an LED chip 14 on a substrate 12 made of an insulating material such as resin or ceramic. It consists of The LED chip 14 is composed of a gallium nitride semiconductor crystal or the like, and emits light such as ultraviolet light or blue visible light having a wavelength that excites a phosphor to be described later.
A pair of external electrodes 16a and 16b extending from the front surface of the substrate 12 through the side surface to the back surface are formed in a state of being insulated from each other.

上記LEDチップ14上面の一方の電極(図示せず)は、ボンディングワイヤ18を介して、一方の外部電極16aに接続されると共に、LEDチップ14上面の他方の電極(図示せず)は、ボンディングワイヤ18を介して、他方の外部電極16bに接続されている。   One electrode (not shown) on the upper surface of the LED chip 14 is connected to one external electrode 16a via a bonding wire 18, and the other electrode (not shown) on the upper surface of the LED chip 14 is bonded. The wire 18 is connected to the other external electrode 16b.

上記LEDチップ14及びボンディングワイヤ18は、基板12上に載置された蛍光体20を担持して成るドーム状の繊維の集合体としての不織布22で覆われている。該ドーム状の不織布22は、接着等の手段で基板12上に接合・固定されている。
不織布22は、図2及び図3に示すように、多数の繊維24が立体的に絡み合って形成されるものであり、繊維24間には多数の空隙26(図3参照)が形成されており、また、多数の繊維24が立体的に絡み合っているため、単位体積当たりの繊維24の表面積が極めて大きいものである。蛍光体20は、不織布22を構成する繊維24の表面に被着・担持されているものであり、図4に示すように、繊維24の表面に、蛍光体20の粒子が多数被着されている。
尚、不織布22を構成する繊維24の繊維密度や、不織布22の厚さ、目付等を適宜調整することにより、不織布22を構成する繊維24の総表面積を任意に増減可能である。
The LED chip 14 and the bonding wire 18 are covered with a non-woven fabric 22 as an aggregate of dome-shaped fibers formed by carrying the phosphor 20 placed on the substrate 12. The dome-shaped non-woven fabric 22 is bonded and fixed on the substrate 12 by means such as adhesion.
As shown in FIGS. 2 and 3, the non-woven fabric 22 is formed by tangling a large number of fibers 24, and a large number of voids 26 (see FIG. 3) are formed between the fibers 24. In addition, since a large number of fibers 24 are intertwined in three dimensions, the surface area of the fibers 24 per unit volume is extremely large. The phosphor 20 is attached to and supported on the surface of the fiber 24 constituting the nonwoven fabric 22, and as shown in FIG. 4, a large number of particles of the phosphor 20 are attached to the surface of the fiber 24. Yes.
Note that the total surface area of the fibers 24 constituting the nonwoven fabric 22 can be arbitrarily increased or decreased by appropriately adjusting the fiber density of the fibers 24 constituting the nonwoven fabric 22, the thickness of the nonwoven fabric 22, the basis weight, and the like.

上記繊維24は、ナイロン、ポリエステル、アクリル、ポリプロピレン、ポリ塩化ビニル等の樹脂繊維、レーヨン等のセルロース系の化学繊維、ガラス繊維、金属繊維等の短繊維から成り、その直径は5〜20μm、長さは0.5〜20mm程度である。
尚、長さが50〜100mm程度の長繊維から成る繊維24を用いることも勿論可能である。
The fibers 24 are made of resin fibers such as nylon, polyester, acrylic, polypropylene, and polyvinyl chloride, cellulosic chemical fibers such as rayon, short fibers such as glass fibers and metal fibers, and the diameter thereof is 5 to 20 μm and long. The thickness is about 0.5 to 20 mm.
Of course, it is also possible to use fibers 24 made of long fibers having a length of about 50 to 100 mm.

上記蛍光体20は、紫外線等の光の照射を受けると、この光を所定波長の可視光等の光に波長変換するものであり、例えば以下の組成のものを用いることができる。
紫外線等の光を赤色可視光に変換する赤色発光用の蛍光体20として、MS:Eu(Mは、La、Gd、Yの何れか1種)、0.5MgF・3.5MgO・GeO:Mn、2MgO・2LiO・Sb:Mn、Y(P,V)O4:Eu、YVO4:Eu、(SrMg)3(PO4):Sn、Y:Eu、CaSiO:Pb,Mn等がある。
また、紫外線等の光を緑色可視光に変換する緑色発光用の蛍光体20として、BaMgAl1627:Eu,Mn、ZnSiO4:Mn、(Ce,Tb,Mn)MgAl1119、LaPO4:Ce,Tb、(Ce,Tb)MgAl1119、YSiO:Ce,Tb、ZnS:Cu,Al、ZnS:Cu,Au,Al、(Zn,Cd)S:Cu,Al、SrAl:Eu、SrAl:Eu,Dy、SrAl1425:Eu,Dy、YAl12:Tb、Y(Al,Ga)12:Tb、YAl12:Ce、Y(Al,Ga)12:Ce等がある。
更に、紫外線等の光を青色可視光に変換する青色発光用の蛍光体20として、(SrCaBa)(PO)Cl:Eu、BaMgAl1627:Eu、(SrMg)7:Eu、Sr7:Eu、Sr:Sn、Sr(PO4Cl:Eu、BaMgAl1627:Eu、CaWO4、CaWO4:Pb青色蛍光体、ZnS:Ag,Cl、ZnS:Ag,Al、(Sr,Ca,Mg)10(PO)Cl:Eu等がある。
上記赤色発光用の蛍光体20、緑色発光用の蛍光体20、青色発光用の蛍光体20を適宜選択・混合して用いることで、種々の色の発色が可能である。
また、青色の可視光を放射するLEDチップ14を用いて白色光を得る場合には、LEDチップ14から放射される光を補色としての黄色可視光に変換する黄色発光用の蛍光体24として、YAl12:Ce、YBO:Ce、BaMgAl1017:Eu,Mn、(Sr,Ca,Ba)(Al,Ga):Eu、BaSiO:Eu、(Sr,Ba)SiO:Eu、SiAlON:Eu等がある。
尚、蛍光体20は、有機、無機の蛍光染料や、有機、無機の蛍光顔料を含むものである。
When the phosphor 20 is irradiated with light such as ultraviolet rays, the phosphor 20 converts the wavelength of the light into light such as visible light having a predetermined wavelength. For example, a phosphor having the following composition can be used.
As a phosphor 20 for red light emission that converts light such as ultraviolet rays into red visible light, M 2 O 2 S: Eu (M is one of La, Gd, and Y), 0.5 MgF 2 .3.5MgO. GeO 2: Mn, 2MgO · 2LiO 2 · Sb 2 O 3: Mn, Y (P, V) O 4: Eu, YVO 4: Eu, (SrMg) 3 (PO 4): Sn, Y 2 O 3: Eu , CaSiO 3 : Pb, Mn and the like.
Further, as a phosphor 20 for green light emission that converts light such as ultraviolet light into green visible light, BaMg 2 Al 16 O 27 : Eu, Mn, Zn 2 SiO 4 : Mn, (Ce, Tb, Mn) MgAl 11 O 19 , LaPO 4 : Ce, Tb, (Ce, Tb) MgAl 11 O 19 , Y 2 SiO 5 : Ce, Tb, ZnS: Cu, Al, ZnS: Cu, Au, Al, (Zn, Cd) S: Cu , Al, SrAl 2 O 4 : Eu, SrAl 2 O 4 : Eu, Dy, Sr 4 Al 14 O 25 : Eu, Dy, Y 3 Al 5 O 12 : Tb, Y 3 (Al, Ga) 5 O 12 : There are Tb, Y 3 Al 5 O 12 : Ce, Y 3 (Al, Ga) 5 O 12 : Ce, and the like.
Furthermore, as a phosphor 20 for blue light emission that converts light such as ultraviolet rays into blue visible light, (SrCaBa) 5 (PO 4 ) 3 Cl: Eu, BaMg 2 Al 16 O 27 : Eu, (SrMg) 2 P 2 O 7 : Eu, Sr 2 P 2 O 7 : Eu, Sr 2 P 2 O 7 : Sn, Sr 5 (PO 4 ) 3 Cl: Eu, BaMg 2 Al 16 O 27 : Eu, CaWO 4 , CaWO 4 : Pb There are blue phosphors, ZnS: Ag, Cl, ZnS: Ag, Al, (Sr, Ca, Mg) 10 (PO 4 ) 6 Cl 2 : Eu, and the like.
Various colors can be generated by appropriately selecting and mixing the phosphor 20 for red light emission, the phosphor 20 for green light emission, and the phosphor 20 for blue light emission.
Further, when obtaining white light using the LED chip 14 that emits blue visible light, as the phosphor 24 for yellow light emission that converts the light emitted from the LED chip 14 into yellow visible light as a complementary color, Y 3 Al 5 O 12 : Ce, YBO 3 : Ce, BaMgAl 10 O 17 : Eu, Mn, (Sr, Ca, Ba) (Al, Ga) 2 S 4 : Eu, Ba 2 SiO 4 : Eu, (Sr , Ba) 2 SiO 4 : Eu, SiAlON: Eu, and the like.
The phosphor 20 includes organic and inorganic fluorescent dyes and organic and inorganic fluorescent pigments.

上記LEDチップ14及び不織布22は、基板12上に配置された所定高さを備えた枠部材28で囲繞されていると共に、該枠部材28内にエポキシ樹脂、シリコン樹脂、アクリル樹脂等の透光性材料を充填して形成された透光性の蓋部材30によって封止されている。   The LED chip 14 and the nonwoven fabric 22 are surrounded by a frame member 28 having a predetermined height disposed on the substrate 12, and a light-transmitting material such as an epoxy resin, a silicon resin, or an acrylic resin is provided in the frame member 28. It is sealed by a translucent lid member 30 formed by filling a conductive material.

本発明の第1の発光ダイオード10にあっては、一対の外部電極16a,16bを介してLEDチップ14に電圧が印加されると、LEDチップ14が発光して、上記蛍光体20を励起させる紫外線や可視光等の光が放射される。この光が、LEDチップ14を覆うドーム状の不織布22に担持された蛍光体20に照射され、所定波長の可視光等の光に波長変換された後、透光性の蓋部材30を透過して外部へ放射されるのである。   In the first light emitting diode 10 of the present invention, when a voltage is applied to the LED chip 14 via the pair of external electrodes 16a and 16b, the LED chip 14 emits light and excites the phosphor 20. Light such as ultraviolet light and visible light is emitted. This light is applied to the phosphor 20 carried on the dome-shaped non-woven fabric 22 covering the LED chip 14, is converted into light such as visible light having a predetermined wavelength, and then passes through the translucent lid member 30. Is radiated to the outside.

而して、本発明の第1の発光ダイオード10にあっては、LEDチップ14をドーム状の不織布22で覆い、該不織布22を構成する繊維24の表面に蛍光体20を担持せしめたことから、蛍光体20で波長変換される光を、蛍光体20で反射された反射光として取り出すことができる。このため、蛍光体74で波長変換される光を透過光として取り出していた従来の発光ダイオード60に比べ、光の取出し効率が向上し、高輝度化を図ることができる。しかも、LEDチップ14が不織布22で覆われているので、LEDチップ14から放射されたほぼ全ての光を、蛍光体20を担持した不織布22に照射することができる。
また、本発明の第1の発光ダイオード10は、単位体積当たりの繊維24の表面積が極めて大きい不織布22を構成する繊維24の表面に蛍光体20を担持せしめたことから、従来の発光ダイオード60の如く、リフレクタ64内に充填したコーティング材72中に蛍光体74を混入した場合に比べ、蛍光体20の量及び表面積を飛躍的に増大させることができる。この場合、本発明の第1の発光ダイオード10は、上記の通り、蛍光体20で波長変換される光を反射光として取り出しているため、蛍光体20の量が増大しても、光を透過光として取り出している従来の発光ダイオード60の如く、蛍光体による光の自己吸収に起因する輝度低下の生じることがない。
Thus, in the first light emitting diode 10 of the present invention, the LED chip 14 is covered with the dome-shaped non-woven fabric 22, and the phosphor 20 is supported on the surface of the fiber 24 constituting the non-woven fabric 22. The light whose wavelength is converted by the phosphor 20 can be extracted as reflected light reflected by the phosphor 20. For this reason, compared with the conventional light emitting diode 60 in which the light whose wavelength is converted by the phosphor 74 is extracted as transmitted light, the light extraction efficiency is improved and high luminance can be achieved. In addition, since the LED chip 14 is covered with the nonwoven fabric 22, almost all the light emitted from the LED chip 14 can be irradiated onto the nonwoven fabric 22 carrying the phosphor 20.
In addition, the first light emitting diode 10 of the present invention has the phosphor 20 supported on the surface of the fiber 24 constituting the nonwoven fabric 22 in which the surface area of the fiber 24 per unit volume is extremely large. As described above, compared to the case where the phosphor 74 is mixed in the coating material 72 filled in the reflector 64, the amount and surface area of the phosphor 20 can be dramatically increased. In this case, since the first light emitting diode 10 of the present invention takes out the light whose wavelength is converted by the phosphor 20 as reflected light as described above, it transmits light even if the amount of the phosphor 20 increases. Unlike the conventional light emitting diode 60 extracted as light, there is no reduction in luminance due to self-absorption of light by the phosphor.

尚、上記不織布22は、ドーム状に限定されるものではなく、例えば内部が中空の直方体状であっても良く、要するに、LEDチップ14が不織布22で覆われていれば良い。   The nonwoven fabric 22 is not limited to a dome shape, and may be, for example, a hollow rectangular parallelepiped shape. In short, the LED chip 14 only needs to be covered with the nonwoven fabric 22.

以下、本発明の第1の発光ダイオード10において、不織布22に蛍光体20を担持させる方法について説明する。
先ず、ポリプロピレン等の高融点材料より成る繊維24を、ポリエチレン等の低融点材料より成る繊維32で被覆した所定長さの複合繊維34(図5参照)を多数準備し、カード法やエアレイ法等を用いて、これら多数の複合繊維34より成るシート状の集積体(ウェブ)を形成する。
Hereinafter, a method for supporting the phosphor 20 on the nonwoven fabric 22 in the first light emitting diode 10 of the present invention will be described.
First, a large number of composite fibers 34 (see FIG. 5) having a predetermined length obtained by coating fibers 24 made of a high melting point material such as polypropylene with fibers 32 made of a low melting point material such as polyethylene are prepared. Is used to form a sheet-like aggregate (web) composed of a large number of these composite fibers 34.

次に、シート状の集積体を、上記複合繊維34を構成する低融点材料より成る繊維32の融点より高く、且つ、高融点材料より成る繊維24の融点より低い温度で加熱し、低融点材料より成る繊維32のみを溶融させると共に、粒子状の蛍光体20を上記集積体に吹き付ける。   Next, the sheet-like assembly is heated at a temperature higher than the melting point of the fiber 32 made of the low-melting-point material constituting the composite fiber 34 and lower than the melting point of the fiber 24 made of the high-melting-point material. Only the fibers 32 made of the melt are melted, and the particulate phosphor 20 is sprayed onto the aggregate.

この結果、高融点材料より成る繊維24の交差部分が、溶融した低融点材料より成る繊維32を介して接着することにより、シート状の不織布22が形成されると共に、粒子状の蛍光体20が、溶融した低融点材料より成る繊維32を介して、不織布22を構成する繊維24の表面に接着・担持される。
上記方法にあっては、高融点材料より成る繊維24を低融点材料より成る繊維32で被覆した複合繊維34を用い、低融点材料より成る繊維32のみを溶融させて接着剤として機能させることにより、不織布22の形成と、不織布22を構成する繊維24の表面への蛍光体20の担持を略同時に行うことができるので、極めて製造容易である。
上記方法で製造されたシート状の不織布22を型抜き等して、上記ドーム状の不織布22は形成される。
As a result, the intersecting portion of the fibers 24 made of the high melting point material is bonded through the melted fibers 32 made of the low melting point material, whereby the sheet-like nonwoven fabric 22 is formed and the particulate phosphor 20 is formed. Then, it is bonded and supported on the surface of the fiber 24 constituting the nonwoven fabric 22 through the fiber 32 made of a molten low melting point material.
In the above method, by using the composite fiber 34 in which the fiber 24 made of the high melting point material is coated with the fiber 32 made of the low melting point material, only the fiber 32 made of the low melting point material is melted to function as an adhesive. Since the formation of the nonwoven fabric 22 and the loading of the phosphor 20 on the surface of the fibers 24 constituting the nonwoven fabric 22 can be performed almost simultaneously, it is extremely easy to manufacture.
The dome-shaped nonwoven fabric 22 is formed by punching the sheet-shaped nonwoven fabric 22 manufactured by the above method.

尚、上記方法以外にも、例えば、蛍光体20の分散樹脂液中に不織布22を浸漬した後乾燥させたり、不織布22の上方から、蛍光体20の分散樹脂液を滴下させることにより、不織布22を構成する繊維24の表面に蛍光体20を被着・担持させても良い。
また、不織布22を加熱して、該不織布22を構成する繊維24の表面を溶融させた状態で蛍光体20を吹き付けることにより、不織布22を構成する繊維24の表面に蛍光体20を被着・担持させることもできる。
さらに、高温加熱した蛍光体20を不織布22に吹きつけ、不織布22を構成する繊維24を一部溶融させることにより、不織布22を構成する繊維24の表面に蛍光体20を被着・担持させても良い。
In addition to the above method, for example, the nonwoven fabric 22 is dipped in the dispersion resin solution of the phosphor 20 and then dried, or the dispersion resin solution of the phosphor 20 is dropped from above the nonwoven fabric 22, so that the nonwoven fabric 22 is dropped. Alternatively, the phosphor 20 may be attached to and supported on the surface of the fibers 24 constituting the.
Further, by heating the nonwoven fabric 22 and spraying the phosphor 20 in a state where the surface of the fiber 24 constituting the nonwoven fabric 22 is melted, the phosphor 20 is deposited on the surface of the fiber 24 constituting the nonwoven fabric 22. It can also be supported.
Further, the phosphor 20 heated at a high temperature is sprayed onto the nonwoven fabric 22, and the fibers 24 constituting the nonwoven fabric 22 are partially melted to adhere and carry the phosphor 20 on the surface of the fibers 24 constituting the nonwoven fabric 22. Also good.

図6は、本発明に係る第2の発光ダイオード40を示すものであり、該第2の発光ダイオード40は、空気の屈折率と、LEDチップ14の屈折率との間の屈折率を有する材料で構成された透光性部材42により、上記LEDチップ14を被覆・封止した点に特徴を有するものであり、その他の構成は、上記第1の発光ダイオード10と同一である。
上記透光性部材42は、例えば、シリコン樹脂で構成される。すなわち、シリコン樹脂の屈折率は1.5程度であり、屈折率が1の空気と、屈折率が3.3程度のLEDチップ14(例えば窒化ガリウム系の場合)との間の屈折率を有している。
第2の発光ダイオード40においては、LEDチップ14上に、未硬化状態の透光性部材42を滴下した後、硬化させてLEDチップ14を封止後、上記ドーム状の不織布22を基板12上に載置・接合して、LEDチップ14及びボンディングワイヤ18を覆えば良い。 或いは、ドーム状の不織布22でLEDチップ14及びボンディングワイヤ18を覆った後、該不織布22の上方から、未硬化状態の透光性部材42を不織布22に向かって垂らし、該不織布22から垂れ落ちた透光性部材42でLEDチップ14を封止するようにしても良い。
FIG. 6 shows a second light emitting diode 40 according to the present invention, which is a material having a refractive index between the refractive index of air and the refractive index of the LED chip 14. The LED chip 14 is covered and sealed by the translucent member 42 configured as described above, and the other configuration is the same as that of the first light emitting diode 10.
The translucent member 42 is made of, for example, silicon resin. That is, the refractive index of silicon resin is about 1.5, and has a refractive index between air having a refractive index of 1 and an LED chip 14 having a refractive index of about 3.3 (for example, in the case of gallium nitride). is doing.
In the second light emitting diode 40, an uncured translucent member 42 is dropped on the LED chip 14 and then cured to seal the LED chip 14, and then the dome-shaped nonwoven fabric 22 is placed on the substrate 12. The LED chip 14 and the bonding wire 18 may be covered by mounting and bonding to each other. Alternatively, after covering the LED chip 14 and the bonding wire 18 with the dome-shaped non-woven fabric 22, the uncured translucent member 42 is hung from the non-woven fabric 22 toward the non-woven fabric 22, and dropped from the non-woven fabric 22. The LED chip 14 may be sealed with the translucent member 42.

上記第2の発光ダイオード40において、空気の屈折率と、LEDチップ14の屈折率との間の屈折率を有する材料より成る透光性部材42で、LEDチップ14を封止したのは次の理由による。
すなわち、空気の屈折率とLEDチップ14の屈折率とは差が大きいため、LEDチップ14から放射された光の一部が、空気との界面で反射してLEDチップ14へ戻ってくるため光の取出し効率が悪い。そこで、第2の発光ダイオード40の如く、空気の屈折率とLEDチップ14の屈折率との間の屈折率を有する透光性部材42でLEDチップ14を封止すれば、LEDチップ14と透光性部材42との間、透光性部材42と空気との間の屈折率の差が小さいため、LEDチップ14と透光性部材42との界面、透光性部材42と空気との界面で反射する光の量が少なく、光の取出し効率が向上するのである。
In the second light emitting diode 40, the LED chip 14 was sealed with the light transmissive member 42 made of a material having a refractive index between the refractive index of air and the refractive index of the LED chip 14 as follows. Depending on the reason.
That is, since the difference between the refractive index of air and the refractive index of the LED chip 14 is large, a part of the light emitted from the LED chip 14 is reflected at the interface with the air and returned to the LED chip 14 so that the light is emitted. The extraction efficiency is poor. Therefore, if the LED chip 14 is sealed with a translucent member 42 having a refractive index between the refractive index of air and the refractive index of the LED chip 14 as in the second light emitting diode 40, the LED chip 14 and the transparent LED 42 are transparent. Since the difference in refractive index between the light-transmitting member 42 and the light-transmitting member 42 and the air is small, the interface between the LED chip 14 and the light-transmitting member 42, the interface between the light-transmitting member 42 and the air As a result, the amount of light reflected by the light source is small and the light extraction efficiency is improved.

図7は、第2の発光ダイオード40の変形例を示すものであり、該第2の発光ダイオード40の変形例は、LEDチップ14及びボンディングワイヤ18を、略円筒状の透光性の枠体43で囲繞すると共に、該枠体43内に充填した上記透光性部材42によりLEDチップ14を被覆・封止し、LEDチップ14、ボンディングワイヤ18、透光性部材42及び枠体43を、ドーム状の不織布22で覆ったものである。
尚、上記枠体43と透光性部材42とは、屈折率に差が生じないように同一材料で構成するのが、光の取出し効率を向上させる上で好ましい。
FIG. 7 shows a modified example of the second light emitting diode 40. The modified example of the second light emitting diode 40 includes an LED chip 14 and a bonding wire 18 and a substantially cylindrical translucent frame. The LED chip 14 is covered and sealed by the light transmissive member 42 filled in the frame body 43, and the LED chip 14, the bonding wire 18, the light transmissive member 42, and the frame body 43, It is covered with a dome-shaped nonwoven fabric 22.
The frame body 43 and the translucent member 42 are preferably made of the same material so as not to cause a difference in refractive index in order to improve light extraction efficiency.

この変形例においては、LEDチップ14及びボンディングワイヤ18を上記枠体43で囲繞した後、該枠体43内に未硬化状態の透光性部材42を充填後、硬化させてLEDチップ14を封止後、上記ドーム状の不織布22を基板12上に載置・接合して、LEDチップ14、ボンディングワイヤ18、透光性部材42及び枠体43を覆えば良い。
或いは、LEDチップ14及びボンディングワイヤ18を上記枠体43で囲繞後、ドーム状の不織布22でLEDチップ14、ボンディングワイヤ18、枠体43を覆い、その後、不織布22の上方から、未硬化状態の透光性部材42を不織布22に向かって垂らし、該不織布22から垂れ落ちた透光性部材42を枠体43内に充填してLEDチップ14を封止するようにしても良い。
この第2の発光ダイオード40の変形例は、LEDチップ14及びボンディングワイヤ18を枠体43で囲繞すると共に、該枠体43内に充填した透光性部材42でLEDチップ14を封止したので、粘度の低い未硬化状態の透光性部材42を用いた場合であっても、透光性部材42が基板12上に拡散・流出することを防止できる。
In this modification, after the LED chip 14 and the bonding wire 18 are surrounded by the frame body 43, the frame body 43 is filled with an uncured translucent member 42 and then cured to seal the LED chip 14. After stopping, the dome-shaped nonwoven fabric 22 may be placed on and bonded to the substrate 12 to cover the LED chip 14, the bonding wire 18, the translucent member 42, and the frame body 43.
Alternatively, after the LED chip 14 and the bonding wire 18 are surrounded by the frame body 43, the LED chip 14, the bonding wire 18, and the frame body 43 are covered with the dome-shaped nonwoven fabric 22, and then the uncured state from above the nonwoven fabric 22. The translucent member 42 may be hung toward the nonwoven fabric 22, and the LED chip 14 may be sealed by filling the frame 43 with the translucent member 42 that has dropped from the non-woven fabric 22.
In the modification of the second light emitting diode 40, the LED chip 14 and the bonding wire 18 are surrounded by the frame body 43, and the LED chip 14 is sealed by the translucent member 42 filled in the frame body 43. Even when the uncured translucent member 42 having a low viscosity is used, the translucent member 42 can be prevented from diffusing and flowing out onto the substrate 12.

上記においては、繊維の集合体として、不織布22を用いた場合を例に挙げて説明したが、本発明はこれに限定されるものではなく、多数の繊維を織り込んで形成した織布を用い、該織布を構成する繊維に蛍光体を担持させても良い。この織布も、不織布22には及ばないものの、単位体積当たりの繊維の表面積が大きいものである。   In the above, the case where the nonwoven fabric 22 is used has been described as an example of the fiber assembly, but the present invention is not limited to this, and a woven fabric formed by weaving a large number of fibers is used. A phosphor may be supported on the fibers constituting the woven fabric. Although this woven fabric does not reach the nonwoven fabric 22, the woven fabric has a large fiber surface area per unit volume.

また、上記においては、不織布22を構成する繊維24の「表面」に蛍光体20を担持せしめた場合を例に挙げて説明したが、本発明はこれに限定されるものではなく、例えば、透明樹脂等より成る透光性の繊維24に粒子状の蛍光体20を練り混むことにより、不織布22を構成する繊維24に蛍光体20を担持させても良い。
この場合、例えば、未硬化状態の透明樹脂中に、粒子状の蛍光体を所定量混合した後、透明樹脂を延伸、硬化させ、その後、所定の長さに切断することにより、蛍光体20が練り混まれた多数の繊維を形成し、斯かる蛍光体20が練り混まれた多数の繊維を用いて不織布22を形成すれば良い。
Further, in the above description, the case where the phosphor 20 is supported on the “surface” of the fiber 24 constituting the nonwoven fabric 22 has been described as an example, but the present invention is not limited to this, for example, transparent The phosphors 20 may be supported on the fibers 24 constituting the nonwoven fabric 22 by kneading and mixing the particulate phosphors 20 with translucent fibers 24 made of resin or the like.
In this case, for example, after mixing a predetermined amount of a particulate phosphor in an uncured transparent resin, the transparent resin is stretched and cured, and then cut into a predetermined length to obtain the phosphor 20 A large number of fibers kneaded and mixed may be formed, and the nonwoven fabric 22 may be formed using a large number of fibers mixed with the phosphor 20.

本発明に係る第1の発光ダイオードを模式的に示す概略断面図である。It is a schematic sectional drawing which shows typically the 1st light emitting diode which concerns on this invention. 蛍光体を担持した不織布を模式的に示す部分拡大図である。It is the elements on larger scale which show typically the nonwoven fabric which carry | supported fluorescent substance. 不織布を構成する繊維を模式的に示す拡大図である。It is an enlarged view which shows typically the fiber which comprises a nonwoven fabric. 不織布を構成する繊維を模式的に示す断面図である。It is sectional drawing which shows typically the fiber which comprises a nonwoven fabric. 複合繊維を示す概略断面図である。It is a schematic sectional drawing which shows a composite fiber. 本発明に係る第2の発光ダイオードを模式的に示す概略断面図である。It is a schematic sectional drawing which shows typically the 2nd light emitting diode which concerns on this invention. 第2の発光ダイオードの変形例を模式的に示す概略断面図である。It is a schematic sectional drawing which shows the modification of a 2nd light emitting diode typically. 従来の発光ダイオードを模式的に示す概略断面図である。It is a schematic sectional drawing which shows the conventional light emitting diode typically.

10 第1の発光ダイオード
12 基板
14 LEDチップ
16a外部電極
16b外部電極
18 ボンディングワイヤ
20 蛍光体
22 不織布
24 繊維
28 枠部材
30 蓋部材
34 複合繊維
40 第2の発光ダイオード
42 透光性部材
43 枠体
10 First light emitting diode
12 Board
14 LED chip
16a external electrode
16b external electrode
18 Bonding wire
20 phosphor
22 Nonwoven fabric
24 fibers
28 Frame member
30 Lid member
34 Composite fiber
40 Second light emitting diode
42 Translucent material
43 Frame

Claims (1)

蛍光体を励起させる波長の光を放射するLEDチップを、多数の繊維が立体的に絡み合って形成された不織布で覆うと共に、該不織布を構成する繊維に蛍光体を担持させたことを特徴とする発光ダイオード。
An LED chip that emits light having a wavelength that excites a phosphor is covered with a nonwoven fabric formed by three-dimensionally intertwining a large number of fibers, and the phosphor is supported on the fibers constituting the nonwoven fabric. Light emitting diode.
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JPH07258951A (en) * 1994-03-17 1995-10-09 Toyobo Co Ltd Nonwoven fabric and its production
JP2002126055A (en) * 2000-10-24 2002-05-08 Toyoda Gosei Co Ltd Air cleaner
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JP2004297018A (en) * 2003-03-28 2004-10-21 Okaya Electric Ind Co Ltd Light emitting diode

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* Cited by examiner, † Cited by third party
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JPH07258951A (en) * 1994-03-17 1995-10-09 Toyobo Co Ltd Nonwoven fabric and its production
JP2002126055A (en) * 2000-10-24 2002-05-08 Toyoda Gosei Co Ltd Air cleaner
JP2004253748A (en) * 2002-12-26 2004-09-09 Okaya Electric Ind Co Ltd Light-emitting diode
JP2004297018A (en) * 2003-03-28 2004-10-21 Okaya Electric Ind Co Ltd Light emitting diode

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