CN107786183B - 嵌入式rf滤波器封装结构及其制造方法 - Google Patents

嵌入式rf滤波器封装结构及其制造方法 Download PDF

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Publication number
CN107786183B
CN107786183B CN201710741497.6A CN201710741497A CN107786183B CN 107786183 B CN107786183 B CN 107786183B CN 201710741497 A CN201710741497 A CN 201710741497A CN 107786183 B CN107786183 B CN 107786183B
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Prior art keywords
acoustic wave
wave filter
filter device
dielectric layer
adhesive
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Chinese (zh)
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CN107786183A (zh
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K.R.纳加卡
李瑢宰
C.J.卡普斯塔
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General Electric Co
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General Electric Co
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H03H9/0561—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/058—Holders or supports for surface acoustic wave devices
    • H03H9/0585—Holders or supports for surface acoustic wave devices consisting of an adhesive layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1042—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a housing formed by a cavity in a resin
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the SAW device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
CN201710741497.6A 2016-08-25 2017-08-25 嵌入式rf滤波器封装结构及其制造方法 Active CN107786183B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/246,671 US10333493B2 (en) 2016-08-25 2016-08-25 Embedded RF filter package structure and method of manufacturing thereof
US15/246671 2016-08-25

Publications (2)

Publication Number Publication Date
CN107786183A CN107786183A (zh) 2018-03-09
CN107786183B true CN107786183B (zh) 2021-07-06

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Country Link
US (1) US10333493B2 (https=)
EP (1) EP3288184B1 (https=)
JP (1) JP6867914B2 (https=)
KR (1) KR102436686B1 (https=)
CN (1) CN107786183B (https=)
TW (1) TWI720239B (https=)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10483248B2 (en) 2017-03-23 2019-11-19 Skyworks Solutions, Inc. Wafer level chip scale filter packaging using semiconductor wafers with through wafer vias
US11502067B2 (en) * 2018-07-26 2022-11-15 Advanced Semiconductor Engineering, Inc. Package structure and method for manufacturing the same
CN108711570B (zh) * 2018-08-10 2024-03-29 浙江熔城半导体有限公司 集成芯片封装结构的多芯片封装结构及其制作方法
CN109390127B (zh) * 2018-11-12 2024-01-30 矽力杰半导体技术(杭州)有限公司 可支撑式封装器件和封装组件
CN109217841B (zh) * 2018-11-27 2024-03-01 杭州左蓝微电子技术有限公司 一种基于声表面波和空腔型薄膜体声波组合谐振器
CN111371428A (zh) * 2018-12-26 2020-07-03 中芯集成电路（宁波）有限公司上海分公司 控制电路与表面声波滤波器的集成方法和集成结构
CN111371429B (zh) * 2018-12-26 2022-07-12 中芯集成电路（宁波）有限公司上海分公司 控制电路与声波滤波器的集成方法和集成结构
CN111371424A (zh) * 2018-12-26 2020-07-03 中芯集成电路（宁波）有限公司上海分公司 控制电路与体声波滤波器的集成方法和集成结构
CN109802031B (zh) * 2018-12-29 2022-07-08 华进半导体封装先导技术研发中心有限公司 一种声表面波器件的封装方法及结构
CN118353412A (zh) * 2019-04-05 2024-07-16 株式会社村田制作所 横向激励薄膜体声波谐振器封装和方法
IT201900006736A1 (it) * 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di fabbricazione di package
CN111952199A (zh) * 2019-05-16 2020-11-17 中芯集成电路（宁波）有限公司 空气隙型半导体器件封装结构及其制作方法
JP7297329B2 (ja) 2019-05-16 2023-06-26 中芯集成電路（寧波）有限公司上海分公司 エアギャップ型半導体デバイスのパッケージング構造及びその製作方法
KR102951083B1 (ko) 2019-05-30 2026-04-14 삼성디스플레이 주식회사 표시 장치
US11323097B2 (en) * 2019-07-24 2022-05-03 Skyworks Solutions, Inc. Bulk acoustic wave filters on shared die
US11646760B2 (en) 2019-09-23 2023-05-09 Ticona Llc RF filter for use at 5G frequencies
US11862546B2 (en) 2019-11-27 2024-01-02 Applied Materials, Inc. Package core assembly and fabrication methods
CN111130489A (zh) * 2019-12-04 2020-05-08 天津大学 芯片封装模块及封装方法及具有该模块的电子装置
US11316497B2 (en) * 2019-12-09 2022-04-26 Intel Corporation Multi-filter die
WO2021114140A1 (zh) * 2019-12-11 2021-06-17 广东省半导体产业技术研究院 滤波芯片封装方法及封装结构
US11257790B2 (en) 2020-03-10 2022-02-22 Applied Materials, Inc. High connectivity device stacking
CN111884613B (zh) * 2020-06-19 2021-03-23 珠海越亚半导体股份有限公司 一种具有空气谐振腔的嵌埋封装结构的制造方法
US11676832B2 (en) 2020-07-24 2023-06-13 Applied Materials, Inc. Laser ablation system for package fabrication
US12334903B2 (en) * 2020-08-31 2025-06-17 Qualcomm Incorporated Substrate comprising acoustic resonators configured as at least one acoustic filter
KR20230172453A (ko) * 2021-04-15 2023-12-22 세키스이가가쿠 고교가부시키가이샤 잉크젯용 및 에어 캐비티 형성용 경화성 조성물, 전자 부품 및 전자 부품의 제조 방법
US12494769B2 (en) 2021-08-27 2025-12-09 Skyworks Solutions, Inc. Packaged surface acoustic wave device with conductive pillar
US12494367B2 (en) * 2021-10-21 2025-12-09 X-Celeprint Limited Printing components to substrate posts with gaps
CN113938109B (zh) * 2021-12-16 2022-04-01 深圳新声半导体有限公司 一种声表面滤波器封装结构
CN114823651B (zh) * 2022-04-06 2023-04-07 杭州道铭微电子有限公司 一种带有滤波器的射频系统模块封装结构及方法
US12082334B2 (en) * 2022-04-14 2024-09-03 Hamilton Sundstrand Corporation Devices and methods to improve thermal conduction from SMT and chip on board components to chassis heat sinking
TWI847124B (zh) * 2022-04-19 2024-07-01 瑞峰半導體股份有限公司 聲波元件
JPWO2024080335A1 (https=) * 2022-10-13 2024-04-18
US12555919B2 (en) 2023-01-03 2026-02-17 Apple Inc. Integration of radio frequency front-end for size reduction and improved performance
US20240371711A1 (en) * 2023-05-05 2024-11-07 Advanced Semiconductor Engineering, Inc. Package structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5920142A (en) * 1996-03-08 1999-07-06 Matsushita Electric Industrial Co., Ltd. Electronic part and a method of production thereof
CN101107776A (zh) * 2005-06-16 2008-01-16 株式会社村田制作所 压电器件及其制作方法
CN105811917A (zh) * 2016-04-01 2016-07-27 江苏长电科技股份有限公司 金属圆片级表面声滤波芯片封装结构及其制造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002063763A1 (en) * 2001-02-06 2002-08-15 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device, its manufacturing method, and electronic circuit device
US6773962B2 (en) 2001-03-15 2004-08-10 General Electric Company Microelectromechanical system device packaging method
JP2004031651A (ja) * 2002-06-26 2004-01-29 Sony Corp 素子実装基板及びその製造方法
US7307331B2 (en) 2004-03-31 2007-12-11 Intel Corporation Integrated radio front-end module with embedded circuit elements
US7307369B2 (en) * 2004-08-26 2007-12-11 Kyocera Corporation Surface acoustic wave device, surface acoustic wave apparatus, and communications equipment
US7982364B2 (en) * 2005-04-01 2011-07-19 Panasonic Corporation Surface acoustic wave device and method for manufacturing the same
JP2007005948A (ja) * 2005-06-22 2007-01-11 Alps Electric Co Ltd 電子部品及びその製造方法
US20080217708A1 (en) 2007-03-09 2008-09-11 Skyworks Solutions, Inc. Integrated passive cap in a system-in-package
US8900931B2 (en) 2007-12-26 2014-12-02 Skyworks Solutions, Inc. In-situ cavity integrated circuit package
US7952187B2 (en) 2008-03-31 2011-05-31 General Electric Company System and method of forming a wafer scale package
US8358000B2 (en) 2009-03-13 2013-01-22 General Electric Company Double side cooled power module with power overlay
JP2012049758A (ja) * 2010-08-26 2012-03-08 Taiyo Yuden Co Ltd フィルタ及びデュープレクサ
US8114712B1 (en) 2010-12-22 2012-02-14 General Electric Company Method for fabricating a semiconductor device package
JP2012248916A (ja) * 2011-05-25 2012-12-13 Taiyo Yuden Co Ltd 弾性波デバイスの製造方法
US8653635B2 (en) 2011-08-16 2014-02-18 General Electric Company Power overlay structure with leadframe connections
JP5541427B2 (ja) * 2012-02-01 2014-07-09 株式会社村田製作所 無線通信モジュール、及びそれを用いた通信端末装置
US8872328B2 (en) 2012-12-19 2014-10-28 General Electric Company Integrated power module package
JP2014155132A (ja) * 2013-02-13 2014-08-25 Murata Mfg Co Ltd 回路基板およびその製造方法
WO2014192614A1 (ja) 2013-05-27 2014-12-04 株式会社村田製作所 弾性表面波装置
WO2015015863A1 (ja) * 2013-07-29 2015-02-05 株式会社村田製作所 アンテナ一体型無線モジュールおよびこのモジュールの製造方法
WO2015098792A1 (ja) * 2013-12-25 2015-07-02 株式会社村田製作所 弾性波フィルタデバイス

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5920142A (en) * 1996-03-08 1999-07-06 Matsushita Electric Industrial Co., Ltd. Electronic part and a method of production thereof
CN101107776A (zh) * 2005-06-16 2008-01-16 株式会社村田制作所 压电器件及其制作方法
CN105811917A (zh) * 2016-04-01 2016-07-27 江苏长电科技股份有限公司 金属圆片级表面声滤波芯片封装结构及其制造方法

Also Published As

Publication number Publication date
KR102436686B1 (ko) 2022-08-25
KR20180023828A (ko) 2018-03-07
JP6867914B2 (ja) 2021-05-12
TW201824746A (zh) 2018-07-01
US10333493B2 (en) 2019-06-25
EP3288184A1 (en) 2018-02-28
TWI720239B (zh) 2021-03-01
US20180062618A1 (en) 2018-03-01
EP3288184B1 (en) 2021-04-07
JP2018074566A (ja) 2018-05-10
CN107786183A (zh) 2018-03-09

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