CN107768523B - Homogeneous junction perovskite thin film solar cell and preparation method thereof - Google Patents
Homogeneous junction perovskite thin film solar cell and preparation method thereof Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 42
- 238000000151 deposition Methods 0.000 claims description 18
- 239000011521 glass Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910021389 graphene Inorganic materials 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000003980 solgel method Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 13
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 230000031700 light absorption Effects 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000006731 degradation reaction Methods 0.000 abstract description 2
- 230000002209 hydrophobic effect Effects 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 1
- 230000006727 cell loss Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052611 pyroxene Inorganic materials 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K30/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention discloses a homogeneous junction perovskite thin film solar cell and a preparation method thereof, and is characterized in that the structure of the solar cell is as follows in sequence from bottom to top: the transparent conductive substrate 1, the P-type perovskite thin film 2, the N-type perovskite thin film 3, the anti-reflection layer 4 and the metal electrode 5. The invention has the advantages that: (1) The solar cell is formed by utilizing the homogeneous junction perovskite thin film, so that the good light absorption performance of perovskite is fully exerted, the recombination of carriers due to lattice mismatch of materials in the transportation process is avoided, and the carrier mobility is improved; (2) By utilizing the function of the anti-reflection layer in hydrophobic and anti-reflection, on one hand, the absorption of solar light by the battery is increased, on the other hand, the physical contact between the metal electrode and the perovskite thin film is effectively blocked, the energy and charge loss caused by interface charge recombination is prevented, and the water and oxygen in the air are effectively blocked from entering to cause the degradation of the perovskite thin film, so that the stability and the photoelectric conversion efficiency of the perovskite thin film solar cell are improved.
Description
Technical Field
The invention belongs to the field of new energy, and particularly relates to a homojunction perovskite thin film solar cell and a preparation method thereof.
Background
In 2009, the first solar cell based on the organic-inorganic hybrid perovskite semiconductor material realizes the photoelectric conversion efficiency of 3.8%, and the conversion efficiency of the solar cell reaches 22.1% in a short period of time, so that the perovskite solar cell material is evaluated as one of the 10 major scientific breakthroughs in 2013 by Science journal. Currently, authentication efficiencies exceeding 20% are limited to small-area perovskite thin film solar cells. For a large-area perovskite thin film solar cell, recently, han Liyuan professor group of national emphasis laboratories of metal composite materials of Shanghai university of transportation and college of engineering, they prepared a large-area perovskite thin film solar cell with an effective area of 36.1 square centimeters under the condition of no solution and no vacuum, and the photoelectric conversion efficiency of the large-area perovskite thin film solar cell reaches 12.1%.
Theoretical calculation shows that high-efficiency photoelectric conversion can be realized when the energy band width of the material for manufacturing the solar cell is 1.4-1.5 ev. The energy band width of conventional silicon is 1.12ev, which is closer to the optimal energy band width of solar cell material, and for single crystal silicon, the photon energy required for electrons to break loose from the silicon atoms to form free charges is 1.1ev, while the voltage loss is 0.4ev when these electrons reach the electrode into the current loop, which has led to commercialization of silicon solar cells. However, silicon is an indirect bandgap material and is relatively expensive. Perovskite solar cells have a high open circuit voltage similar to commercial silicon solar cells, and the perovskite cell loss is also 0.4ev during the break-away of electrons into the current loop, as is the case with silicon solar cells. The perovskite is a direct band gap semiconductor, the forbidden band width is 1.55ev, the perovskite is very close to the optimal energy band width for manufacturing the solar cell material, and the conductivity and the carrier mobility are high. Moreover, the perovskite material has good light absorption performance due to high extinction coefficient, and almost all visible light can be absorbed by the very thin perovskite material for photoelectric conversion, and the perovskite material is obviously stronger than a silicon battery in the aspect of absorbing blue light and green light. In addition, the perovskite is derived from alkaline rock or modified pyroxene, is inexhaustible, is low in cost, can be prepared into a solution, is low in energy consumption, is simple and convenient in material preparation process, and can be used for large-scale production. However, there are many problems faced in achieving the marketized application, such as stability of the battery device, photoelectric conversion efficiency, and tolerance of perovskite materials to air and water.
Disclosure of Invention
In order to fully absorb sunlight and effectively improve the stability and photoelectric conversion efficiency of a perovskite solar cell, the invention provides a homojunction perovskite thin film solar cell and a preparation method thereof, and the homojunction perovskite thin film solar cell is characterized in that the structure of the solar cell is as follows from bottom to top: transparent conductive substrate, P type perovskite film, N type perovskite film, antireflection layer, metal electrode. The transparent conductive substrate is ITO conductive glass or FTO conductive glass or graphene or organic flexible transparent conductive plastic; the perovskite thin film is CH 3 NH 3 PbI 3 Or CH (CH) 3 NH 3 PbBr 3 Or CH (CH) 3 NH 3 PbCl 3 The method comprises the steps of carrying out a first treatment on the surface of the The anti-reflection layer is a silicon dioxide film or a silicon nitride film; the metal electrode is a metal silver electrode or an aluminum electrode; the preparation process of the solar cell comprises the following steps: firstly, taking a clean transparent conductive substrate, and sequentially depositing a P-type perovskite film and an N-type perovskite film on the transparent conductive substrate by using a one-step solution method, a two-step solution method, a double-source vapor deposition method or a vapor-phase auxiliary solution method; then, depositing an anti-reflection layer on the surface of the N-type perovskite film by using a chemical vapor deposition method or a physical vapor deposition method or a sol-gel method; and finally, depositing metal front and back electrodes on the surface of the anti-reflection layer and the transparent conductive substrate respectively by utilizing a vacuum evaporation method or a screen printing method to obtain the perovskite thin film solar cell. The invention has the advantages that: (1) The solar cell formed by the homogeneous perovskite thin film can fully exert the good light absorption performance of perovskite, almost all visible light can be absorbed by the very thin thickness for photoelectric conversion, especially on blue light and green light absorption, which is obviously stronger than that of a silicon cell,moreover, the homojunction solar cell can avoid the recombination of carriers due to lattice mismatch of materials in the transportation process, so that the carrier mobility is improved; (2) By utilizing the hydrophobic anti-reflection effect of the anti-reflection layer, on one hand, the solar cell can absorb sunlight, on the other hand, the physical contact between the metal electrode and the perovskite film can be effectively blocked, the energy and charge loss caused by interface charge recombination can be prevented, and the anti-reflection layer has the porous compact structural characteristics, so that the water and oxygen in the air can be effectively blocked from entering to cause the degradation of the perovskite film. Based on the advantages, the perovskite thin film solar cell provided by the invention can effectively improve the stability and the photoelectric conversion efficiency.
Description of the drawings:
fig. 1 is a schematic diagram of a layer structure of a homojunction perovskite thin film solar cell provided by the invention.
Figure 1 reference numerals illustrate:
1-a transparent conductive substrate;
2-P-type perovskite thin film;
a 3-N type perovskite thin film;
a 4-antireflective layer;
5-metal electrode.
Detailed Description
The invention will be further described with reference to fig. 1 and the specific embodiments, but the invention is not limited to the embodiments.
The invention is according to the structure shown in figure 1, it includes transparent conductive substrate 1, P type perovskite film 2, N type perovskite film 3, antireflection layer 4, metal electrode 5 that distribute from bottom to top in proper order.
Embodiment one: the preparation method of the homogeneous junction perovskite thin film solar cell comprises the following steps:
firstly, taking a piece of clean FTO conductive glass, and sequentially depositing a P-type perovskite film and an N-type perovskite film on the FTO conductive glass by utilizing a gas-phase auxiliary solution method; then, depositing a silicon dioxide film on the surface of the N-type perovskite film by using a chemical vapor deposition method; and finally, respectively depositing metal aluminum electrodes on the surface of the silicon dioxide film and the FTO conductive glass by utilizing a screen printing method to obtain the perovskite film solar cell.
Embodiment two:
firstly, taking a piece of clean ITO conductive glass, and sequentially depositing a P-type perovskite film and an N-type perovskite film on the ITO conductive glass by a double-source vapor deposition method; then, depositing a silicon nitride film on the surface of the N-type perovskite film by using a sol-gel method; and finally, respectively depositing metal silver electrodes on the surface of the silicon nitride film and the ITO conductive glass by utilizing a vacuum evaporation method to obtain the perovskite film solar cell.
Embodiment III:
firstly, taking a piece of clean organic flexible transparent conductive plastic, and sequentially depositing a P-type perovskite film and an N-type perovskite film on the organic flexible transparent conductive plastic by using a one-step solution method; then, depositing a silicon nitride film on the surface of the N-type perovskite film by using a physical vapor deposition method; and finally, respectively depositing metal aluminum electrodes on the surface of the silicon nitride film and the organic flexible transparent conductive plastic by utilizing a screen printing method to obtain the perovskite film solar cell.
Embodiment four:
firstly, taking a piece of clean graphene, and sequentially depositing a P-type perovskite film and an N-type perovskite film on the graphene by a two-step solution method; then, depositing a silicon nitride film on the surface of the N-type perovskite film by using a physical vapor deposition method; and finally, respectively depositing metal silver electrodes on the surface of the silicon nitride film and the graphene by utilizing a vacuum evaporation method, so as to obtain the perovskite film solar cell.
Claims (3)
1. The homogeneous junction perovskite thin film solar cell is characterized in that the structure of the solar cell is as follows from bottom to top: a transparent conductive substrate, a P-type perovskite film, an N-type perovskite film, an anti-reflection layer and a metal electrode; the anti-reflection layer is a silicon dioxide film or a silicon nitride film; the preparation method of the thin film solar cell comprises the following steps: firstly, taking a clean transparent conductive substrate, and sequentially depositing a P-type perovskite film and an N-type perovskite film on the transparent conductive substrate by using a one-step solution method, a two-step solution method, a double-source vapor deposition method or a vapor-phase auxiliary solution method; then, depositing an anti-reflection layer on the surface of the N-type perovskite film by using a chemical vapor deposition method or a physical vapor deposition method or a sol-gel method; and finally, depositing metal front and back electrodes on the surface of the anti-reflection layer and the transparent conductive substrate respectively by utilizing a vacuum evaporation method or a screen printing method to obtain the perovskite thin film solar cell.
2. The solar cell according to claim 1, wherein the transparent conductive substrate is ITO conductive glass or FTO conductive glass or graphene or organic flexible transparent conductive plastic.
3. The solar cell according to claim 1, wherein the perovskite thin film is CH 3 NH 3 PbI 3 Or CH (CH) 3 NH 3 PbBr 3 Or CH (CH) 3 NH 3 PbCl 3 。
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| CN109713131B (en) * | 2018-12-30 | 2020-10-09 | 华北电力大学 | Organic-inorganic hybrid perovskite homojunction solar cell based on n-i-p structure |
| CN110335946A (en) * | 2019-06-26 | 2019-10-15 | 上海黎元新能源科技有限公司 | A kind of the perovskite extinction layer material and solar battery of perovskite solar battery |
| CN111430480A (en) * | 2020-04-17 | 2020-07-17 | 南方科技大学 | Homojunction perovskite photoelectric detector and preparation method and application thereof |
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| Broadband anti-reflection coatings for thin film photovoltaics;Kaminski P M, Womack G, Walls J M.;《IEEE》;全文 * |
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| CN107768523A (en) | 2018-03-06 |
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