CN106033795A - Preparing method for V2O5-and-Bphen-modified perovskite solar cell - Google Patents
Preparing method for V2O5-and-Bphen-modified perovskite solar cell Download PDFInfo
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Abstract
The invention discloses a preparing method for a V2O5-and-Bphen-modified perovskite solar cell. According to the preparing method, on the basis of a conventional perovskite-type solar cell, a V2O5 modifying layer is additionally arranged between a hole transmitting layer and a bottom electrode, ITO electrode corrosion caused by an acidic PEDOT: PSS film is prevented, the stability of a cell structure is improved, and the photon absorption rate of a perovskite active layer is increased through the photon reflection function of a V2O5 film. In addition, a Bphen film is additionally arranged between an electron transmitting layer and a top electrode, the coverage rate of a PCBM hole transmitting layer is increased, the perovskite layer is prevented from being in direct contact with an Ag electrode, the photoelectric conversion efficiency of a solar cell device is improved, and the service life of the solar cell device is prolonged. The maximum photoelectric conversion efficiency of the perovskite solar cell prepared with the method is 14.05%, and the conversion efficiency of the perovskite solar cell is 9.69% after the perovskite solar cell is stored for 300 h.
Description
Technical field
The invention belongs to the preparing technical field of perovskite solaode, be specifically related to a kind of V2O5Preparation method with the perovskite solaode that Bphen modifies.
Background technology
Metal halide Ca-Ti ore type solaode, owing to its raw material is common, processing technology simple, have low production cost and the feature such as opto-electronic conversion performance is excellent concurrently it is considered to be the nova of photovoltaic industry.2009, the halogen perovskite solar cell photoelectric transformation efficiency of the organic inorganic hybridization occurred first only had 3.8%.After 2011, people achieve a series of important breakthrough to the research of the type battery.Recently, the photoelectric transformation efficiency of the most authentic battery has reached 22.1%.From 2009 till now, the time of short 7 years, the research to perovskite solaode, achieve many important breakthroughs.Although the photoelectric transformation efficiency of Ca-Ti ore type solaode is enhanced, but the stability of battery and life-span always perplex a difficult problem for researcher, are also one of biggest obstacles hindering its scale application.
Summary of the invention
Present invention solves the technical problem that and there is provided a kind of V2O5With the preparation method of the perovskite solaode that Bphen modifies, prepared Ca-Ti ore type solaode utilizes V2O5With Bphen as decorative layer, the two can improve the performance of hole transmission layer and electron transfer layer respectively, improves photoelectric transformation efficiency and the stability of solaode further, and extends the service life of solaode.
The present invention solves that above-mentioned technical problem adopts the following technical scheme that, a kind of V2O5Preparation method with the perovskite solaode that Bphen modifies, it is characterised in that concretely comprise the following steps:
Step S1: etching ITO substrate
Step S101: the ITO electro-conductive glass of bulk cuts into the rectangle ITO electro-conductive glass of a size of 13mm × 15mm, clings along the narrow limit central authorities of rectangle ITO electro-conductive glass with conducting resinl wide for 12mm, it is to avoid there is bubble in the middle of conducting resinl and ITO electro-conductive glass；
Step S102: the ITO electro-conductive glass edge not covering conducting resinl in step S101 gained spreads last layer Zn powder；
Step S103: the ITO electro-conductive glass processed through step S102 is transferred in fume hood; with dropper, concentrated hydrochloric acid is dripped on Zn powder; under conditions of Zn powder is as catalyst; the ITO not covering conducting resinl is eroded by concentrated hydrochloric acid; conducting resinl protection ITO electro-conductive glass central authorities are not required to the part of etching, and ITO substrate has etched；
Step S2: clean ITO substrate
Step S201: repeatedly clean the ITO substrate etched with the cotton balls being moistened with detergent, removes the spot of attachment on ITO substrate；
Step S202: the ITO substrate supersound washing 10-20min in the NaOH solution that molar concentration is 0.5-1mol/L that will process through step S201, neutralizes unreacted concentrated hydrochloric acid completely；
Step S203: the supersound washing 10-20min being repeated 1 times in deionized water, dehydrated alcohol and acetone successively by the ITO substrate processed through step S202, removes water-solubility impurity and the Organic impurity of attachment on ITO substrate respectively；
Step S204: put in drying baker by the ITO substrate processed through step S203, is dried 10-15min under conditions of 100 DEG C；
Step S205: the ITO substrate processed through step S204 is put in UV ozone machine, ultra-vioket radiation ozone 10-15min, i.e. obtain clean ITO substrate；
Step S3: preparation chemical reagent
Step S301: weigh the V of 0.5mg2O5Powder is dissolved in 1mL deionized water, stirs more than 12h；
Step S302: weigh the CH of 256mg3NH3I powder and the PbCl of 149mg2Powder, is dissolved in after mixing in 1mL solvent dimethylformamide, stirs more than 12h；
Step S303: the PCBM powder weighing 20mg is dissolved in 1mL chlorobenzene solvent, stirs more than 12h；
Step S304: the Bphen weighing 0.5mg is dissolved in 1mL anhydrous ethanol solvent, stirs more than 12h；
Step S4: prepare perovskite solar cell device
Step S401: the step S301 gained solution water system filter of 0.45 μm is filtered, it is coated on the clean ITO substrate that step S2 obtains, with the speed spin coating 40s of 2000-3000rpm, it is then placed within warm table natural cooling after 140 DEG C of annealing 10-20min；
Step S402: filtered by the PEDOT:PSS solution water system filter of 0.22 μm, is coated on the ITO substrate that step S401 processes, and with the speed spin coating 40s of 4000-5000rpm, is then placed within warm table natural cooling after 140 DEG C of annealing 10-20min；
Step S403: the ITO substrate processed through step S402 is transferred in glove box, again step S302 gained solution organic filter of 0.22 μm is filtered, it is coated on the ITO substrate that step S402 processes, with the speed spin coating 40s of 3000-4000rpm, repetitive coatings operates once, is then placed within warm table annealing, from the beginning of 30 DEG C, heat up 10 DEG C at interval of 8-10min, until temperature is increased to 100 DEG C, natural cooling after heating 90-120min；
Step S404: filtered by step S303 gained solution organic filter of 0.22 μm, is coated on the ITO substrate that step S403 processes, with the speed spin coating 40s of 3000-4000rpm；
Step S405: filtered by step S304 gained solution organic filter of 0.22 μm, is coated on the ITO substrate that step S404 processes, with the speed spin coating 40s of 2000-3000rpm, and natural cooling after annealing 10-15min in 60 DEG C on warm table；
Step S406: step S405 gained ITO substrate is inverted in figuratum mask plate at quarter, puts in evaporator, 4.5 × 105Be deposited with Ag electrode under the pressure conditions of Pa, prepared by perovskite solar cell device.
The present invention compared with prior art has the advantages that
1, in perovskite solaode, V is used2O5Film modified PEDOT:PSS hole transmission layer, it can not only stop the acid PEDOT:PSS thin film destruction to ITO electrode, strengthen the stability of battery, and can strengthen the calcium titanium ore bed absorbance to photon；
2, with Bphen film modified PCBM electron transfer layer in perovskite solaode, increase the coverage rate of electron transfer layer, prevent perovskite thin film subregion from contacting with the direct of Ag electrode, increase the hole transmission layer collection rate to electronics, and directly contact of calcium titanium ore bed and atmospheric environment, the photoelectric transformation efficiency of raising perovskite solaode and life-span can be reduced；
3, the photoelectric transformation efficiency that the Ca-Ti ore type solaode prepared is maximum is 14.05%, and after preserving 300h, still has the conversion efficiency of 9.69%, and efficiency only have dropped 30%.
Accompanying drawing explanation
Fig. 1 is the J-V curve chart of the embodiment of the present invention 1 gained perovskite solaode；
Fig. 2 is that photoelectric transformation efficiency PCE of the embodiment of the present invention 1 gained perovskite solaode is schemed over time；
Fig. 3 is that the fill factor, curve factor FF of the embodiment of the present invention 1 gained perovskite solaode schemes over time；
Fig. 4 is the open-circuit voltage V of the embodiment of the present invention 1 gained perovskite solaodeOCScheme over time；
Fig. 5 is the short circuit current J of the embodiment of the present invention 1 gained perovskite solaodeSCScheme over time；
Fig. 6 is the J-V curve chart of the embodiment of the present invention 2 gained perovskite solaode；
Fig. 7 is the J-V curve chart of the embodiment of the present invention 3 gained perovskite solaode.
Detailed description of the invention
Being described in further details the foregoing of the present invention by the following examples, but this should not being interpreted as, the scope of the above-mentioned theme of the present invention is only limitted to below example, all technology realized based on foregoing of the present invention belong to the scope of the present invention.
Embodiment 1
Step S1: etching ITO substrate
Step S101: the ITO electro-conductive glass of bulk cuts into the rectangle ITO electro-conductive glass of a size of 13mm × 15mm, clings along the narrow limit central authorities of rectangle ITO electro-conductive glass with conducting resinl wide for 12mm, it is to avoid there is bubble in the middle of conducting resinl and ITO electro-conductive glass；
Step S102: do not cover the ITO electro-conductive glass edge of conducting resinl in step S101 gained and sprinkle the Zn powder of thin layer；
Step S103: the ITO electro-conductive glass processed through step S102 is transferred in fume hood; with dropper, concentrated hydrochloric acid is slowly dripped on Zn powder; under conditions of Zn powder is as catalyst; the ITO not covering conducting resinl is eroded by concentrated hydrochloric acid; conducting resinl protection ITO electro-conductive glass central authorities are not required to the part of etching, and ITO substrate has i.e. etched；
Step S2: clean ITO substrate
Step S201: repeatedly clean the ITO substrate etched with the cotton balls being moistened with detergent, removes the spot of attachment on ITO substrate；
Step S202: the ITO substrate supersound washing 10min in the NaOH solution that molar concentration is 0.5mol/L that will process through step S201, neutralizes unreacted concentrated hydrochloric acid completely；
Step S203: the supersound washing 10min being repeated 1 times in deionized water, dehydrated alcohol and acetone successively by the ITO substrate processed through step 202, removes water-solubility impurity and the Organic impurity of attachment on ITO substrate respectively；
Step S204: put in drying baker by the ITO substrate processed through step S203, is dried 10min under conditions of 100 DEG C；
Step S205: the ITO substrate processed through step S204 is put in UV ozone machine, ultra-vioket radiation ozone 10min, obtain ITO substrate totally；
Step S3: preparation chemical reagent
Step S301: weigh the V of 0.5mg2O5Powder is dissolved in 1mL deionized water, stirs 12h；
Step S302: weigh the CH of 256mg3NH3I powder and the PbCl of 149mg2Powder, is dissolved in after mixing in 1mL DMF solvent, stirs 12h；
Step S303: the PCBM powder weighing 20mg is dissolved in 1mL chlorobenzene solvent, stirs 12h；
Step S304: the Bphen powder weighing 0.5mg is dissolved in 1mL anhydrous ethanol solvent, stirs 12h；
Step S4: prepare perovskite solar cell device
Step S401: the step S301 gained solution water system filter of 0.45 μm is filtered, it is coated on the clean ITO substrate that step S2 obtains, with the speed spin coating 40s of 2000rpm, it is then placed within warm table natural cooling after 140 DEG C of annealing 20min, i.e. obtains V2O5Decorative layer；
Step S402: the PEDOT:PSS solution water system filter of 0.22 μm is filtered, it is coated on the ITO substrate that step S401 processes, with the speed spin coating 40s of 4500rpm, it is then placed within warm table natural cooling after 140 DEG C of annealing 20min, i.e. obtains PEDOT:PSS hole transmission layer；
Step S403: the ITO substrate processed through step S402 is transferred in glove box, again step S302 gained solution organic filter of 0.22 μm is filtered, being coated on the ITO substrate that step S402 processes, with the speed spin coating 40s of 4000rpm, repetitive coatings operates once, it is then placed within warm table annealing, from the beginning of 30 DEG C, heat up 10 DEG C at interval of 10min, until temperature is increased to 100 DEG C, natural cooling after heating 100min, i.e. obtains perovskite light absorbing zone；
Step S404: step S303 gained solution organic filter of 0.22 μm is filtered, is coated on the ITO substrate that step S403 processes, with the speed spin coating 40s of 4000rpm, i.e. obtains PCBM electron transfer layer；
Step S405: step S304 gained solution organic filter of 0.22 μm is filtered, it is coated on the ITO substrate that step S404 processes, with the speed spin coating 40s of 2000rpm, it is placed on warm table natural cooling after 60 DEG C of annealing 10min, i.e. obtains Bphen decorative layer；
Step S406: the ITO substrate processed through step S405 is inverted in figuratum mask plate at quarter, puts in evaporator, 4.5 × 105Be deposited with Ag electrode under the pressure of Pa, prepared by perovskite solar cell device.
Fig. 1 is the J-V curve chart that the present embodiment prepares perovskite solaode.At AM1.5 spectral conditions, 100mW/cm2The intensity of light source irradiate under the conditions of, the performance of the made battery device of simulating sun optical tests, it will be seen from figure 1 that the photoelectric transformation efficiency of battery device is 14.05%, open-circuit voltage is 0.91V, and short-circuit current density is 21.49mA/cm2, fill factor, curve factor is 0.73.
Fig. 2-5 gives the variation tendency of the battery conversion efficiency in the initial 300h of perovskite solar cell device that the present embodiment prepares.From Fig. 2-5 it can be seen that, after 300h, the photoelectric transformation efficiency of battery is reduced to 9.69% from 14.05%, and efficiency declines relatively slow, and fill factor, curve factor does not significantly decreases, open-circuit voltage and short-circuit current density decline slowly, and the stability of the perovskite solar cell device that the method prepares is preferable.
Embodiment 2
Step S1: etching ITO substrate
Step S101: the ITO electro-conductive glass of bulk cuts into the rectangle ITO electro-conductive glass of a size of 13mm × 15mm, clings along the narrow limit central authorities of rectangle ITO electro-conductive glass with conducting resinl wide for 12mm, it is to avoid there is bubble in the middle of conducting resinl and ITO electro-conductive glass；
Step S102: do not cover the ITO electro-conductive glass edge of conducting resinl in step S101 gained and sprinkle the Zn powder of thin layer；
Step S103: the ITO electro-conductive glass processed through step S102 is transferred in fume hood; with dropper, concentrated hydrochloric acid is slowly dripped on Zn powder; under conditions of Zn powder is as catalyst; the ITO not covering conducting resinl is eroded by concentrated hydrochloric acid; conducting resinl protection ITO electro-conductive glass central authorities are not required to the part of etching, and ITO substrate has i.e. etched；
Step S2: clean ITO substrate
Step S201: repeatedly clean the ITO substrate etched with the cotton balls being moistened with detergent, removes the spot of attachment on ITO substrate；
Step S202: the ITO substrate supersound washing 15min in the NaOH solution that molar concentration is 1mol/L that will process through step S201, neutralizes unreacted concentrated hydrochloric acid completely；
Step S203: the supersound washing 12min being repeated 1 times in deionized water, dehydrated alcohol and acetone successively by the ITO substrate processed through step S202, removes water-solubility impurity and the Organic impurity of attachment on ITO substrate respectively；
Step S204: put in drying baker by the ITO substrate processed through step S203, is dried 12min under conditions of 100 DEG C；
Step S205: the ITO substrate processed through step S204 is put in UV ozone machine, ultra-vioket radiation ozone 12min, obtain ITO substrate totally；
Step S3: preparation chemical reagent
Step S301: weigh the V of 0.5mg2O5Powder is dissolved in 1mL deionized water, stirs 15h；
Step S302: weigh the CH of 256mg3NH3I powder and the PbCl of 149mg2Powder, is dissolved in after mixing in 1mL DMF solvent, stirs 15h；
Step S303: the PCBM powder weighing 20mg is dissolved in 1mL chlorobenzene solvent, stirs 15h；
Step S304: the Bphen powder weighing 0.5mg is dissolved in 1mL anhydrous ethanol solvent, stirs 15h；
Step S4: prepare perovskite solar cell device
Step S401: the step S301 gained solution water system filter of 0.45 μm is filtered, it is coated on the clean ITO substrate that step S2 obtains, with the speed spin coating 40s of 2500rpm, it is then placed within warm table natural cooling after 140 DEG C of annealing 15min, i.e. obtains V2O5Decorative layer；
Step S402: the PEDOT:PSS solution water system filter of 0.22 μm is filtered, it is coated on the ITO substrate that step S401 processes, with the speed spin coating 40s of 4000rpm, it is then placed within warm table natural cooling after 140 DEG C of annealing 15min, i.e. obtains PEDOT:PSS hole transmission layer；
Step S403: the ITO substrate processed through step S402 is transferred in glove box, again step S302 gained solution organic filter of 0.22 μm is filtered, being coated on the ITO substrate that step S402 processes, with the speed spin coating 40s of 4000rpm, repetitive coatings operates once, it is then placed within warm table annealing, from the beginning of 30 DEG C, heat up 10 DEG C at interval of 10min, until temperature is increased to 100 DEG C, natural cooling after heating 120min, i.e. obtains perovskite light absorbing zone；
Step S404: step S303 gained solution organic filter of 0.22 μm is filtered, is coated on the ITO substrate that step S403 processes, with the speed spin coating 40s of 3500rpm, i.e. obtains PCBM electron transfer layer；
Step S405: step S304 gained solution organic filter of 0.22 μm is filtered, it is coated on the ITO substrate that step S404 processes, with the speed spin coating 40s of 2500rpm, it is then placed within warm table natural cooling after 60 DEG C of annealing 10min, i.e. obtains Bphen decorative layer；
Step S406: the ITO substrate processed through step S405 is inverted in figuratum mask plate at quarter, puts in evaporator, 4.5 × 105Be deposited with Ag electrode under the pressure of Pa, prepared by perovskite solar cell device.
Fig. 6 is the J-V curve chart that the present embodiment prepares perovskite solaode.At AM1.5 spectral conditions, 100mW/cm2The intensity of light source irradiate under the conditions of, the performance of the made battery device of simulating sun optical tests, from fig. 6, it can be seen that the photoelectric transformation efficiency of solar cell device is 13.97%, open-circuit voltage is 0.90V, and short-circuit current density is 21.62mA/cm2, fill factor, curve factor is 0.72, and the battery efficiency of this enforcement preparation, open-circuit voltage, fill factor, curve factor are declined slightly, and short-circuit current density increases.
Embodiment 3
Step S1: etching ITO substrate
Step S101: the ITO electro-conductive glass of bulk cuts into the rectangle ITO electro-conductive glass of a size of 13mm × 15mm, clings along the narrow limit central authorities of rectangle ITO electro-conductive glass with conducting resinl wide for 12mm, it is to avoid there is bubble in the middle of conducting resinl and ITO electro-conductive glass；
Step S102: do not cover the ITO electro-conductive glass edge of conducting resinl in step S101 gained and sprinkle the Zn powder of thin layer；
Step S103: the ITO electro-conductive glass processed through step S102 is transferred in fume hood; with dropper, concentrated hydrochloric acid is slowly dripped on Zn powder; under conditions of Zn powder is as catalyst; the ITO not covering conducting resinl is eroded by concentrated hydrochloric acid; conducting resinl protection ITO electro-conductive glass central authorities are not required to the part of etching, and ITO substrate has i.e. etched；
Step S2: clean ITO substrate
Step S201: repeatedly clean the ITO substrate etched with the cotton balls being moistened with detergent, removes the spot of attachment on ITO substrate；
Step S202: the ITO substrate supersound washing 20min in the NaOH solution that molar concentration is 0.8mol/L that will process through step S201, neutralizes unreacted concentrated hydrochloric acid completely；
Step S203: the supersound washing 20min being repeated 1 times in deionized water, dehydrated alcohol and acetone successively by the ITO substrate processed through step S202, removes water-solubility impurity and the Organic impurity of attachment on ITO substrate respectively；
Step S204: put in drying baker by the ITO substrate processed through step S203, is dried 15min under conditions of 100 DEG C；
Step S205: the ITO substrate processed through step S204 is put in UV ozone machine, ultra-vioket radiation ozone 15min, obtain ITO substrate totally；
Step S3: preparation chemical reagent
Step S301: weigh the V of 0.5mg2O5Powder is dissolved in 1mL deionized water, stirs 24h；
Step S302: weigh the CH of 256mg3NH3I powder and the PbCl of 149mg2Powder, is dissolved in after mixing in 1mL DMF solvent, stirs 24h；
Step S303: the PCBM powder weighing 20mg is dissolved in 1mL chlorobenzene solvent, stirs 24h；
Step S304: the Bphen powder weighing 0.5mg is dissolved in 1mL anhydrous ethanol solvent, stirs 24h；
Step S4: prepare perovskite solar cell device
Step S401: the step S301 gained solution water system filter of 0.45 μm is filtered, it is coated on the clean ITO substrate that step S2 obtains, with the speed spin coating 40s of 3000rpm, it is then placed within warm table natural cooling after 140 DEG C of annealing 10min, i.e. obtains V2O5Decorative layer；
Step S402: the PEDOT:PSS solution water system filter of 0.22 μm is filtered, it is coated on the ITO substrate that step S401 processes, with the speed spin coating 40s of 5000rpm, it is then placed within warm table natural cooling after 140 DEG C of annealing 10min, i.e. obtains PEDOT:PSS hole transmission layer；
Step S403: the ITO substrate processed through step S402 is transferred in glove box, again step S302 gained solution organic filter of 0.22 μm is filtered, being coated on the ITO substrate that step S402 processes, with the speed spin coating 40s of 3000rpm, repetitive coatings operates once, it is then placed within warm table annealing, from the beginning of 30 DEG C, heat up 10 DEG C at interval of 8min, until temperature is increased to 100 DEG C, natural cooling after heating 90min, i.e. obtains perovskite light absorbing zone；
Step S404: step S303 gained solution organic filter of 0.22 μm is filtered, is coated on the ITO substrate that step S403 processes, with the speed spin coating 40s of 3000rpm, i.e. obtains PCBM electron transfer layer；
Step S405: step S304 gained solution organic filter of 0.22 μm is filtered, it is coated on the ITO substrate that step S404 processes, with the speed spin coating 40s of 3000rpm, it is then placed within warm table natural cooling after 60 DEG C of annealing 15min, i.e. obtains Bphen decorative layer；
Step S406: the ITO substrate processed through step S405 is inverted in figuratum mask plate at quarter, puts in evaporator, 4.5 × 105Be deposited with Ag electrode under the pressure of Pa, prepared by perovskite solar cell device.
Fig. 7 is the J-V curve chart that the present embodiment prepares perovskite solaode.At AM1.5 spectral conditions, 100mW/cm2The intensity of light source irradiate under the conditions of, the performance of the made battery device of simulating sun optical tests, from figure 7 it can be seen that the photoelectric transformation efficiency of solar cell device is 13.93%, open-circuit voltage is 0.91V, and short-circuit current density is 21.56mA/cm2, fill factor, curve factor is 0.71, and this implements the battery efficiency of preparation, fill factor, curve factor is declined slightly, and open-circuit voltage is constant, and short-circuit current density increases.
Embodiment above describes the ultimate principle of the present invention, principal character and advantage; skilled person will appreciate that of the industry; the present invention is not restricted to the described embodiments; the principle that the present invention is simply described described in above-described embodiment and description; under the scope without departing from the principle of the invention; the present invention also has various changes and modifications, and these changes and improvements each fall within the scope of protection of the invention.
Claims (1)
1. a V2O5Preparation method with the perovskite solaode that Bphen modifies, it is characterised in that concretely comprise the following steps:
Step S1: etching ITO substrate
Step S101: the ITO electro-conductive glass of bulk cuts into the rectangle ITO electro-conductive glass of a size of 13mm × 15mm, clings along the narrow limit central authorities of rectangle ITO electro-conductive glass with conducting resinl wide for 12mm, it is to avoid there is bubble in the middle of conducting resinl and ITO electro-conductive glass；
Step S102: the ITO electro-conductive glass edge not covering conducting resinl in step S101 gained spreads last layer Zn powder；
Step S103: the ITO electro-conductive glass processed through step S102 is transferred in fume hood; with dropper, concentrated hydrochloric acid is dripped on Zn powder; under conditions of Zn powder is as catalyst; the ITO not covering conducting resinl is eroded by concentrated hydrochloric acid; conducting resinl protection ITO electro-conductive glass central authorities are not required to the part of etching, and ITO substrate has etched；
Step S2: clean ITO substrate
Step S201: repeatedly clean the ITO substrate etched with the cotton balls being moistened with detergent, removes the spot of attachment on ITO substrate；
Step S202: the ITO substrate supersound washing 10-20min in the NaOH solution that molar concentration is 0.5-1mol/L that will process through step S201, neutralizes unreacted concentrated hydrochloric acid completely；
Step S203: the supersound washing 10-20min being repeated 1 times in deionized water, dehydrated alcohol and acetone successively by the ITO substrate processed through step S202, removes water-solubility impurity and the Organic impurity of attachment on ITO substrate respectively；
Step S204: put in drying baker by the ITO substrate processed through step S203, is dried 10-15min under conditions of 100 DEG C；
Step S205: the ITO substrate processed through step S204 is put in UV ozone machine, ultra-vioket radiation ozone 10-15min, i.e. obtain clean ITO substrate；
Step S3: preparation chemical reagent
Step S301: weigh the V of 0.5mg2O5Powder is dissolved in 1mL deionized water, stirs more than 12h；
Step S302: weigh the CH of 256mg3NH3I powder and the PbCl of 149mg2Powder, is dissolved in after mixing in 1mL solvent dimethylformamide, stirs more than 12h；
Step S303: the PCBM powder weighing 20mg is dissolved in 1mL chlorobenzene solvent, stirs more than 12h；
Step S304: the Bphen weighing 0.5mg is dissolved in 1mL anhydrous ethanol solvent, stirs more than 12h；
Step S4: prepare perovskite solar cell device
Step S401: the step S301 gained solution water system filter of 0.45 μm is filtered, it is coated on the clean ITO substrate that step S2 obtains, with the speed spin coating 40s of 2000-3000rpm, it is then placed within warm table natural cooling after 140 DEG C of annealing 10-20min；
Step S402: filtered by the PEDOT:PSS solution water system filter of 0.22 μm, is coated on the ITO substrate that step S401 processes, and with the speed spin coating 40s of 4000-5000rpm, is then placed within warm table natural cooling after 140 DEG C of annealing 10-20min；
Step S403: the ITO substrate processed through step S402 is transferred in glove box, again step S302 gained solution organic filter of 0.22 μm is filtered, it is coated on the ITO substrate that step S402 processes, with the speed spin coating 40s of 3000-4000rpm, repetitive coatings operates once, is then placed within warm table annealing, from the beginning of 30 DEG C, heat up 10 DEG C at interval of 8-10min, until temperature is increased to 100 DEG C, natural cooling after heating 90-120min；
Step S404: filtered by step S303 gained solution organic filter of 0.22 μm, is coated on the ITO substrate that step S403 processes, with the speed spin coating 40s of 3000-4000rpm；
Step S405: filtered by step S304 gained solution organic filter of 0.22 μm, is coated on the ITO substrate that step S404 processes, with the speed spin coating 40s of 2000-3000rpm, and natural cooling after annealing 10-15min in 60 DEG C on warm table；
Step S406: step S405 gained ITO substrate is inverted in figuratum mask plate at quarter, puts in evaporator, 4.5 × 105Be deposited with Ag electrode under the pressure conditions of Pa, prepared by perovskite solar cell device.
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| CN112768611A (en) * | 2021-01-11 | 2021-05-07 | 陈云 | Preparation method of trans-organic-inorganic hybrid perovskite solar cell |
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