CN108878662A - One kind adulterating PEDOT in Perovskite:The preparation method of the perovskite solar battery of PSS - Google Patents

One kind adulterating PEDOT in Perovskite:The preparation method of the perovskite solar battery of PSS Download PDF

Info

Publication number
CN108878662A
CN108878662A CN201810723015.9A CN201810723015A CN108878662A CN 108878662 A CN108878662 A CN 108878662A CN 201810723015 A CN201810723015 A CN 201810723015A CN 108878662 A CN108878662 A CN 108878662A
Authority
CN
China
Prior art keywords
pedot
pss
perovskite
spin coating
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201810723015.9A
Other languages
Chinese (zh)
Other versions
CN108878662B (en
Inventor
刘志勇
刘凯凯
刘鹏飞
虞登吉
段君杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Henan Normal University
Original Assignee
Henan Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Henan Normal University filed Critical Henan Normal University
Priority to CN201810723015.9A priority Critical patent/CN108878662B/en
Publication of CN108878662A publication Critical patent/CN108878662A/en
Application granted granted Critical
Publication of CN108878662B publication Critical patent/CN108878662B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Abstract

The invention discloses one kind, and PEDOT is adulterated in Perovskite:The preparation method of the perovskite solar battery of PSS, detailed process are:1)PEDOT:The preparation of PSS hole transmission layer;2)Perovskite-PEDOT:The preparation of PSS perovskite photoactive layer;3)The preparation of PCBM electron transfer layer;4)The preparation of Bphen hole blocking layer;5)It is prepared by the vapor deposition of Ag electrode.The present invention is with Perovskite-PEDOT:PSS can improve the pattern of perovskite light type layer living as perovskite photoactive layer, simultaneously because PEDOT:The hole transport ability of PSS and the complexing between Perovskite, the volume defect and boundary defect of calcium titanium ore bed can be effectively passivated, to improve the efficiency of transmission of photo-generated carrier, therefore greatly enhance the photoelectric properties of perovskite solar battery.The invention is simple and feasible, and material is easy to get, advantage of lower cost, has no excessively high condition requirement, while the solar cell device photoelectric properties prepared are good and photoelectric conversion rate is higher.

Description

One kind adulterating PEDOT in Perovskite:The perovskite solar battery of PSS Preparation method
Technical field
The invention belongs to the design of perovskite solar battery and preparation technical fields, and in particular to Yi Zhong PEDOT is adulterated in Perovskite:The preparation method of the perovskite solar battery of PSS.
Background technique
After gradually recognizing the problems such as traditional coal resources are limited and thermal power generation bring pollutes from people, lied prostrate with photoproduction The solar battery that special efficacy should be theoretical foundation causes the extensive concern of people.Perovskite solar battery is due to its brilliance Photoelectric properties, since the advent of the world, by the development of a few years, the performances such as efficiency are constantly refreshed and are broken through.Traditional Perovskite solar battery reacts raw using iodine methylamine and lead iodide or lead chloride as presoma, by stoichiometric ratio appropriate At the perovskite structure with cubic structure.Using iodine methylamine lead chloride as the inverted structure perovskite solar structure of presoma In, since the pattern of perovskite influences, there are certain volume defects, and cause the compound of photo-generated carrier to a certain extent, The transmission of charge is influenced, therefore influences the photoelectric properties of device.The present invention is with classical hole mobile material PEDOT:PSS is to add Agent is added to be doped Perovskite calcium titanium ore bed, due to PEDOT:Complexing between PSS and Perovskite improves Calcium titanium ore bed pattern, is passivated the volume defect of perovskite, to reduce charge recombination, promotes effective transmission of charge, and then improve With Perovskite-PEDOT:PSS is the photoelectric properties and photoelectric conversion efficiency of the battery device of calcium titanium ore bed.The present invention is not The synthesis of new material is needed, operating method is simple and easy and effect is preferable, this walks out laboratory for perovskite solar battery, walks New thinking is provided to life application.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of process, simple and reliable and effect is preferably in Perovskite Middle doping PEDOT:The preparation method of the perovskite solar battery of PSS, the perovskite solar battery have preferable photoelectricity Performance and higher photoelectric conversion efficiency.
The present invention adopts the following technical scheme that one kind adulterates PEDOT in Perovskite to solve above-mentioned technical problem: The preparation method of the perovskite solar battery of PSS, it is characterised in that detailed process is:
Step S100:Prepare PEDOT:PSS hole transmission layer, the specific steps are:
Step S101:Ito glass through over cleaning and hydrophilicity-imparting treatment is placed on sol evenning machine, is uniformly applied on ito glass Cover PEDOT:PSS aqueous solution simultaneously carries out spin coating and obtains PEDOT:The precursor film of PSS hole transmission layer, spin coating revolving speed be 2500 ~ 3500 revs/min, spin-coating time is 30 ~ 40 seconds;
Step S102:The ITO substrate of spin coating precursor film by step S101 processing is placed on warm table, in air environment In annealed with the constant temperature lower than 140 DEG C and obtain PEDOT in homogeneous thickness in 15 ~ 30 minutes:PSS hole transmission layer;
Step S200:Prepare Perovskite-PEDOT:PSS calcium titanium ore bed, the specific steps are:
Step S201:By PEDOT:PSS aqueous solution and DMF solution, which dissolve each other, is configured to the mixing that percent by volume is 1.0% ~ 2.0% Solvent;
Step S202:By PbCl2And CH3NH3I is 1 according to molar ratio:3 are uniformly mixed and obtain mixed-powder, and by above-mentioned mixing Powder be placed in by step S201 prepare in the mixed solvent, be placed on the warm table in glove box, in nitrogen atmosphere with Temperature heating stirring lower than 70 DEG C dissolves to obtain mixed solution;
Step S203:The obtained mixed solution of step S202 is filtered with the polytetrafluoroethylene filter of 0.45 μm of specification Obtain the clear Perovskite-PEDOT of yellow:PSS calcium titanium ore bed precursor solution;
Step S204:The obtained growth of step S102 there is into PEDOT:The ITO substrate of PSS hole transmission layer is placed in glove box Sol evenning machine on, in PEDOT:The Perovskite-PEDOT that uniform coating step S203 is obtained on PSS hole transmission layer:PSS Calcium titanium ore bed precursor solution simultaneously carries out spin coating and obtains Perovskite-PEDOT:The precursor film of PSS calcium titanium ore bed, spin coating revolving speed are 3000 ~ 5000 revs/min, spin-coating time is 40 ~ 50 seconds;
Step S205:The warm table ITO substrate for having precursor film by the spin coating of step S204 processing being placed in glove box On, with 10 DEG C/10 minutes heating rates from 30 DEG C of Gradient annealings to 100 ~ 120 DEG C, and continue at temperatures below 120 °C Annealing obtains the Perovskite-PEDOT of brownish black in 1.5 hours:PSS calcium titanium ore bed;
Step S300:PCBM electron transfer layer is prepared, the specific steps are:
Step S301:15 ~ 25mg dark brown powder PCBM is placed in chlorobenzene in glove box, is placed on warm table, in nitrogen It is dissolved in compression ring border with the temperature heating stirring lower than 60 DEG C, finally obtains the PCBM electron transfer layer that concentration is 20 ± 5mg/mL Precursor solution;
Step S302:The obtained growth of step S205 there is into Perovskite-PEDOT:The ITO substrate of PSS calcium titanium ore bed is placed On sol evenning machine in glove box, in Perovskite-PEDOT:Uniformly coating is prepared by step S301 on PSS calcium titanium ore bed PCBM electron transfer layer precursor solution, and carry out spin coating and obtain the precursor film of PCBM electron transfer layer, spin coating revolving speed is 2000 ~ 4000 revs/min, spin-coating time is 40 ~ 50 seconds;
Step S303:There to be the ITO substrate of precursor film to be placed on the warm table of glove box by the spin coating of step S302 processing, It anneals 15 ~ 20 minutes in nitrogen environment in 60 ~ 80 DEG C and obtains PCBM electron transfer layer;
Step S400:Bphen hole blocking layer is prepared, the specific steps are:
Step S401:5 ~ 7mg powder Bphen is placed in dehydrated alcohol in air, is then placed within the warm table of glove box On, heating stirring dissolves to obtain the Bphen hole blocking layer precursor solution that concentration is 0.5 ~ 0.7mg/mL in nitrogen environment;
Step S402:The ITO substrate that the growth that step S302 is obtained has PCBM electron transfer layer is placed on even in glove box On glue machine, the Bphen hole blocking layer precursor solution that uniformly coating is prepared by step S401 on PCBM electron transfer layer, so Spin coating is carried out afterwards and obtains Bphen hole blocking layer, and spin coating revolving speed is 4000 ~ 6000 revs/min, and spin-coating time is 40 ~ 50 seconds;
Step S500:Ag electrode is prepared, the specific steps are:
At room temperature, growth step S402 obtained has the ITO substrate of Bphen hole blocking layer to be placed on vacuum coating equipment In, 4.5 × 10−4The silver electrode film that a layer thickness is 80 ~ 120nm is deposited with thermal evaporation methods under the high vacuum environment of Pa, Obtaining structure is ITO/PEDOT:PSS/Perovskite-PEDOT:PSS/PCBM/Bphen/Ag's mixes in Perovskite Miscellaneous PEDOT:The perovskite solar battery of PSS.
The invention has the advantages that:
1, the present invention by solution spin-coating method prepares battery device, in the ITO substrate through over cleaning and hydrophilic treated, prepare with Perovskite-PEDOT:PSS is the perovskite solar-electricity of the inverted structure of calcium titanium ore bed.By PEDOT:The doping of PSS Afterwards, the pattern of calcium titanium ore bed is improved, simultaneously because PEDOT:PSS is to the passivation of calcium titanium ore bed volume defect, effectively Promotion charge transmission, to greatly improve the photoelectric properties and photoelectric conversion efficiency of perovskite solar battery;
2,Perovskite-PEDOT:PSS calcium titanium ore bed, crystalline property is good, does not occur in addition to perovskite characteristic peak Other miscellaneous peaks(As shown in Figure 1);
3,Perovskite-PEDOT:PSS calcium titanium ore bed, pattern is good, and crystallite dimension is compared with longer spread densification, and surface is smooth, Without obvious cavity and pin hole(As shown in Figure 2);
4, with Perovskite-PEDOT:PSS is the perovskite solar battery of calcium titanium ore bed preparation, has preferable photo electric Efficiency can be changed with photoelectricity dress(As shown in Figure 3).
Detailed description of the invention
Fig. 1 is Perovskite-PEDOT:The SEM of PSS calcium titanium ore bed schemes.
Fig. 2 is Perovskite-PEDOT:The XRD diagram of PSS calcium titanium ore bed.
Fig. 3 is Perovskite-PEDOT:PSS perovskite solar batteryJ-VFigure.
Specific embodiment
Above content of the invention is described in further details by the following examples, but this should not be interpreted as to this The range for inventing above-mentioned theme is only limitted to embodiment below, and all technologies realized based on above content of the present invention belong to this hair Bright range.
Embodiment 1
Step S100:Prepare PEDOT:PSS hole transmission layer, the specific steps are:
Step S101:Ito glass through over cleaning and hydrophilicity-imparting treatment is placed on sol evenning machine, is uniformly applied on ito glass Cover PEDOT:PSS aqueous solution simultaneously carries out spin coating and obtains PEDOT:The precursor film of PSS hole transmission layer, spin coating revolving speed be 3500 turns/ Point, spin-coating time is 40 seconds;
Step S102:The ITO substrate of spin coating precursor film by step S101 processing is placed on warm table, in air environment In persistently anneal in 130 DEG C and obtain PEDOT in homogeneous thickness in 20 minutes:PSS hole transmission layer;
Step S200:Prepare Perovskite-PEDOT:PSS calcium titanium ore bed, the specific steps are:
Step S201:By PEDOT:PSS aqueous solution and DMF solution, which dissolve each other, is configured to the mixed solvent that percent by volume is 1.0%;
Step S202:By PbCl2And CH3NH3I is 1 according to molar ratio:3 are uniformly mixed and obtain mixed-powder, and by above-mentioned mixing Powder be placed in by step S201 prepare in the mixed solvent, be placed on the warm table in glove box, in nitrogen atmosphere in 70 DEG C of heating stirrings dissolve to obtain mixed solution;
Step S203:The obtained mixed solution of step S202 is filtered with the polytetrafluoroethylene filter of 0.45 μm of specification Obtain the clear Perovskite-PEDOT of yellow:PSS calcium titanium ore bed precursor solution;
Step S204:The obtained growth of step S102 there is into PEDOT:The ITO substrate of PSS hole transmission layer is placed in glove box Sol evenning machine on, in PEDOT:The Perovskite-PEDOT that uniform coating step S203 is obtained on PSS hole transmission layer:PSS Calcium titanium ore bed precursor solution simultaneously carries out spin coating and obtains Perovskite-PEDOT:The precursor film of PSS calcium titanium ore bed, spin coating revolving speed are 3000 revs/min, spin-coating time is 40 seconds;
Step S205:The warm table ITO substrate for having precursor film by the spin coating of step S204 processing being placed in glove box On, with 10 DEG C/10 minutes heating rates from 30 DEG C of Gradient annealings to 110 DEG C, and persistently anneal 1.5 hours in 110 DEG C of constant temperature Obtain the Perovskite-PEDOT of brownish black:PSS calcium titanium ore bed;
Step S300:PCBM electron transfer layer is prepared, the specific steps are:
Step S301:15mg dark brown powder PCBM is placed in chlorobenzene in glove box, is placed on warm table, in nitrogen ring It is dissolved in border in 60 DEG C of heating stirrings, finally obtains the PCBM electron transfer layer precursor solution that concentration is 20mg/mL;
Step S302:The obtained growth of step S205 there is into Perovskite-PEDOT:The ITO substrate of PSS calcium titanium ore bed is placed On sol evenning machine in glove box, in Perovskite-PEDOT:Uniformly coating is prepared by step S301 on PSS calcium titanium ore bed PCBM electron transfer layer precursor solution, and carry out spin coating and obtain the precursor film of PCBM electron transfer layer, spin coating revolving speed is 3000 Rev/min, spin-coating time is 40 seconds;
Step S303:There to be the ITO substrate of precursor film to be placed on the warm table of glove box by the spin coating of step S302 processing, It anneals 20 minutes in nitrogen environment in 60 DEG C and obtains PCBM electron transfer layer;
Step S400:Bphen hole blocking layer is prepared, the specific steps are:
Step S401:5mg powder Bphen is placed in the dehydrated alcohol newly sealed off in air, is then placed within glove box On warm table, heating stirring dissolves to obtain the Bphen hole blocking layer precursor solution that concentration is 0.5mg/mL in nitrogen environment;
Step S402:The ITO substrate that the growth that step S302 is obtained has PCBM electron transfer layer is placed on even in glove box On glue machine, the Bphen hole blocking layer precursor solution that uniformly coating is prepared by step S401 on PCBM electron transfer layer, so Spin coating is carried out afterwards and obtains Bphen hole blocking layer, and spin coating revolving speed is 4000 revs/min, and spin-coating time is 40 seconds;
Step S500:Ag electrode is prepared, the specific steps are:
At room temperature, growth step S402 obtained has the ITO substrate of Bphen hole blocking layer to be placed on vacuum coating equipment In, 4.5 × 10−4A layer thickness is deposited as the silver electrode film of 80nm with thermal evaporation methods under the high vacuum environment of Pa, obtains Structure is ITO/PEDOT:PSS/Perovskite-PEDOT:PSS/PCBM/Bphen/Ag's adulterates in Perovskite PEDOT:The perovskite solar battery of PSS.
Fig. 1 is the Perovskite-PEDOT that the present embodiment is prepared:The XRD data parameters of PSS calcium titanium ore bed, this data Show that the sample crystallization is good, other miscellaneous peaks in addition to perovskite characteristic peak does not occur.
Embodiment 2
Step S100:Prepare PEDOT:PSS hole transmission layer, the specific steps are:
Step S101:Ito glass through over cleaning and hydrophilicity-imparting treatment is placed on sol evenning machine, is uniformly applied on ito glass Cover PEDOT:PSS aqueous solution simultaneously carries out spin coating and obtains PEDOT:The precursor film of PSS hole transmission layer, spin coating revolving speed be 3000 turns/ Point, spin-coating time is 30 seconds;
Step S102:The ITO substrate of spin coating precursor film by step S101 processing is placed on warm table, in air environment In persistently anneal in 130 DEG C and obtain PEDOT in homogeneous thickness in 15 minutes:PSS hole transmission layer;
Step S200:Prepare Perovskite-PEDOT:PSS calcium titanium ore bed, the specific steps are:
Step S201:By PEDOT:PSS aqueous solution and DMF solution, which dissolve each other, is configured to the mixed solvent that percent by volume is 1.5%;
Step S202:By PbCl2And CH3NH3I is 1 according to molar ratio:3 are uniformly mixed and obtain mixed-powder, and by above-mentioned mixing Powder be placed in by step S201 prepare in the mixed solvent, be placed on the warm table in glove box, in nitrogen atmosphere in 60 DEG C of heating stirrings dissolve to obtain mixed solution;
Step S203:The obtained mixed solution of step S202 is filtered with the polytetrafluoroethylene filter of 0.45 μm of specification Obtain the clear Perovskite-PEDOT of yellow:PSS calcium titanium ore bed precursor solution;
Step S204:The obtained growth of step S102 there is into PEDOT:The ITO substrate of PSS hole transmission layer is placed in glove box Sol evenning machine on, in PEDOT:The Perovskite-PEDOT that uniform coating step S203 is obtained on PSS hole transmission layer:PSS Calcium titanium ore bed precursor solution simultaneously carries out spin coating and obtains Perovskite-PEDOT:The precursor film of PSS calcium titanium ore bed, spin coating revolving speed are 4000 revs/min, spin-coating time is 40 seconds;
Step S205:The warm table ITO substrate for having precursor film by the spin coating of step S204 processing being placed in glove box On, with 10 DEG C/10 minutes heating rates from 30 DEG C of Gradient annealings to 100 DEG C, and persistently anneal 1.5 hours in 100 DEG C of constant temperature Obtain the Perovskite-PEDOT of brownish black:PSS calcium titanium ore bed;
Step S300:PCBM electron transfer layer is prepared, the specific steps are:
Step S301:20mg dark brown powder PCBM is placed in chlorobenzene in glove box, is placed on warm table, in nitrogen ring It is dissolved in border in 60 DEG C of heating stirrings, finally obtains the PCBM electron transfer layer precursor solution that concentration is 20mg/mL;
Step S302:The obtained growth of step S205 there is into Perovskite-PEDOT:The ITO substrate of PSS calcium titanium ore bed is placed On sol evenning machine in glove box, in Perovskite-PEDOT:Uniformly coating is prepared by step S301 on PSS calcium titanium ore bed PCBM electron transfer layer precursor solution, and carry out spin coating and obtain the precursor film of PCBM electron transfer layer, spin coating revolving speed is 2000 Rev/min, spin-coating time is 40 seconds;
Step S303:There to be the ITO substrate of precursor film to be placed on the warm table of glove box by the spin coating of step S302 processing, It anneals 20 minutes in nitrogen environment in 60 DEG C and obtains PCBM electron transfer layer;
Step S400:Bphen hole blocking layer is prepared, the specific steps are:
Step S401:7mg powder Bphen is placed in the dehydrated alcohol newly sealed off in air, is then placed within glove box On warm table, heating stirring dissolves to obtain the Bphen hole blocking layer precursor solution that concentration is 0.7mg/mL in nitrogen environment;
Step S402:The ITO substrate that the growth that step S302 is obtained has PCBM electron transfer layer is placed on even in glove box On glue machine, the Bphen hole blocking layer precursor solution that uniformly coating is prepared by step S401 on PCBM electron transfer layer, so Spin coating is carried out afterwards and obtains Bphen hole blocking layer, and spin coating revolving speed is 4000 revs/min, and spin-coating time is 40 seconds;
Step S500:Ag electrode is prepared, the specific steps are:
At room temperature, growth step S402 obtained has the ITO substrate of Bphen hole blocking layer to be placed on vacuum coating equipment In, 4.5 × 10−4A layer thickness is deposited as the silver electrode film of 80nm with thermal evaporation methods under the high vacuum environment of Pa, obtains Structure is ITO/PEDOT:PSS/Perovskite-PEDOT:PSS/PCBM/Bphen/Ag's adulterates in Perovskite PEDOT:The perovskite solar battery of PSS.
Fig. 2 is the Perovskite-PEDOT that the embodiment is prepared:The film surface of PSS calcium titanium ore bed, as seen from the figure, The sample crystallite dimension is larger, and arrangement is fine and close, and surface is smooth.
Embodiment 3
Step S100:Prepare PEDOT:PSS hole transmission layer, the specific steps are:
Step S101:Ito glass through over cleaning and hydrophilicity-imparting treatment is placed on sol evenning machine, is uniformly applied on ito glass Cover PEDOT:PSS aqueous solution simultaneously carries out spin coating and obtains PEDOT:The precursor film of PSS hole transmission layer, spin coating revolving speed be 2500 turns/ Point, spin-coating time is 30 seconds;
Step S102:The ITO substrate of spin coating precursor film by step S101 processing is placed on warm table, in air environment In persistently anneal in 130 DEG C and obtain PEDOT in homogeneous thickness in 15 minutes:PSS hole transmission layer;
Step S200:Prepare Perovskite-PEDOT:PSS calcium titanium ore bed, the specific steps are:
Step S201:By PEDOT:PSS aqueous solution and DMF solution, which dissolve each other, is configured to the mixed solvent that percent by volume is 1.5%;
Step S202:By PbCl2And CH3NH3I is 1 according to molar ratio:3 are uniformly mixed and obtain mixed-powder, and by above-mentioned mixing Powder be placed in by step S201 prepare in the mixed solvent, be placed on the warm table in glove box, in nitrogen atmosphere in 60 DEG C of heating stirrings dissolve to obtain mixed solution;
Step S203:The obtained mixed solution of step S202 is filtered with the polytetrafluoroethylene filter of 0.45 μm of specification Obtain the clear Perovskite-PEDOT of yellow:PSS calcium titanium ore bed precursor solution;
Step S204:The obtained growth of step S102 there is into PEDOT:The ITO substrate of PSS hole transmission layer is placed in glove box Sol evenning machine on, in PEDOT:The Perovskite-PEDOT that uniform coating step S203 is obtained on PSS hole transmission layer:PSS Calcium titanium ore bed precursor solution simultaneously carries out spin coating and obtains Perovskite-PEDOT:The precursor film of PSS calcium titanium ore bed, spin coating revolving speed are 5000 revs/min, spin-coating time is 50 seconds;
Step S205:The warm table ITO substrate for having precursor film by the spin coating of step S204 processing being placed in glove box On, with 10 DEG C/10 minutes heating rates from 30 DEG C of Gradient annealings to 100 DEG C, and persistently anneal 1.5 hours in 100 DEG C of constant temperature Obtain the Perovskite-PEDOT of brownish black:PSS calcium titanium ore bed;
Step S300:PCBM electron transfer layer is prepared, the specific steps are:
Step S301:20mg dark brown powder PCBM is placed in chlorobenzene in glove box, is placed on warm table, in nitrogen ring It is dissolved in border in 60 DEG C of heating stirrings, finally obtains the PCBM electron transfer layer precursor solution that concentration is 20mg/mL;
Step S302:The obtained growth of step S205 there is into Perovskite-PEDOT:The ITO substrate of PSS calcium titanium ore bed is placed On sol evenning machine in glove box, in Perovskite-PEDOT:Uniformly coating is prepared by step S301 on PSS calcium titanium ore bed PCBM electron transfer layer precursor solution, and carry out spin coating and obtain the precursor film of PCBM electron transfer layer, spin coating revolving speed is 2000 Rev/min, spin-coating time is 40 seconds;
Step S303:There to be the ITO substrate of precursor film to be placed on the warm table of glove box by the spin coating of step S302 processing, It anneals 20 minutes in nitrogen environment in 60 DEG C and obtains PCBM electron transfer layer;
Step S400:Bphen hole blocking layer is prepared, the specific steps are:
Step S401:7mg powder Bphen is placed in the dehydrated alcohol newly sealed off in air, is then placed within glove box On warm table, heating stirring dissolves to obtain the Bphen hole blocking layer precursor solution that concentration is 0.7mg/mL in nitrogen environment;
Step S402:The ITO substrate that the growth that step S302 is obtained has PCBM electron transfer layer is placed on even in glove box On glue machine, the Bphen hole blocking layer precursor solution that uniformly coating is prepared by step S401 on PCBM electron transfer layer, so Spin coating is carried out afterwards and obtains Bphen hole blocking layer, and spin coating revolving speed is 4000 revs/min, and spin-coating time is 40 seconds;
Step S500:Ag electrode is prepared, the specific steps are:
At room temperature, growth step S402 obtained has the ITO substrate of Bphen hole blocking layer to be placed on vacuum coating equipment In, 4.5 × 10−4A layer thickness is deposited as the silver electrode film of 120nm with thermal evaporation methods under the high vacuum environment of Pa, obtains It is ITO/PEDOT to structure:PSS/Perovskite-PEDOT:PSS/PCBM/Bphen/Ag's adulterates in Perovskite PEDOT:The perovskite solar battery of PSS.
Perovskite-PEDOT prepared by the embodiment:PSS perovskite solar battery is placed on J-V test macro Middle progress photoelectric properties test, as shown in figure 3, available using the perovskite solar battery that the embodiment is prepared 17.5% incident photon-to-electron conversion efficiency.
Embodiment above describes basic principles and main features of the invention and advantage, the technical staff of the industry should Understand, the present invention is not limited to the above embodiments, and the above embodiments and description only describe originals of the invention Reason, under the range for not departing from the principle of the invention, various changes and improvements may be made to the invention, these changes and improvements are each fallen within In the scope of protection of the invention.

Claims (1)

1. one kind adulterates PEDOT in Perovskite:The preparation method of the perovskite solar battery of PSS, it is characterised in that Detailed process is:
Step S100:Prepare PEDOT:PSS hole transmission layer, the specific steps are:
Step S101:Ito glass through over cleaning and hydrophilicity-imparting treatment is placed on sol evenning machine, is uniformly applied on ito glass Cover PEDOT:PSS aqueous solution simultaneously carries out spin coating and obtains PEDOT:The precursor film of PSS hole transmission layer, spin coating revolving speed be 2500 ~ 3500 revs/min, spin-coating time is 30 ~ 40 seconds;
Step S102:The ITO substrate of spin coating precursor film by step S101 processing is placed on warm table, in air environment In annealed with the constant temperature lower than 140 DEG C and obtain PEDOT in homogeneous thickness in 15 ~ 30 minutes:PSS hole transmission layer;
Step S200:Prepare Perovskite-PEDOT:PSS calcium titanium ore bed, the specific steps are:
Step S201:By PEDOT:PSS aqueous solution and DMF solution, which dissolve each other, is configured to the mixing that percent by volume is 1.0% ~ 2.0% Solvent;
Step S202:By PbCl2And CH3NH3I is 1 according to molar ratio:3 are uniformly mixed and obtain mixed-powder, and by above-mentioned mixing Powder be placed in by step S201 prepare in the mixed solvent, be placed on the warm table in glove box, in nitrogen atmosphere with Temperature heating stirring lower than 70 DEG C dissolves to obtain mixed solution;
Step S203:The obtained mixed solution of step S202 is filtered with the polytetrafluoroethylene filter of 0.45 μm of specification Obtain the clear Perovskite-PEDOT of yellow:PSS calcium titanium ore bed precursor solution;
Step S204:The obtained growth of step S102 there is into PEDOT:The ITO substrate of PSS hole transmission layer is placed in glove box Sol evenning machine on, in PEDOT:The Perovskite-PEDOT that uniform coating step S203 is obtained on PSS hole transmission layer:PSS Calcium titanium ore bed precursor solution simultaneously carries out spin coating and obtains Perovskite-PEDOT:The precursor film of PSS calcium titanium ore bed, spin coating revolving speed are 3000 ~ 5000 revs/min, spin-coating time is 40 ~ 50 seconds;
Step S205:The warm table ITO substrate for having precursor film by the spin coating of step S204 processing being placed in glove box On, with 10 DEG C/10 minutes heating rates from 30 DEG C of Gradient annealings to 100 ~ 120 DEG C, and continue at temperatures below 120 °C Annealing obtains the Perovskite-PEDOT of brownish black in 1.5 hours:PSS calcium titanium ore bed;
Step S300:PCBM electron transfer layer is prepared, the specific steps are:
Step S301:15 ~ 25mg dark brown powder PCBM is placed in chlorobenzene in glove box, is placed on warm table, in nitrogen It is dissolved in compression ring border with the temperature heating stirring lower than 60 DEG C, finally obtains the PCBM electron transfer layer that concentration is 20 ± 5mg/mL Precursor solution;
Step S302:The obtained growth of step S205 there is into Perovskite-PEDOT:The ITO substrate of PSS calcium titanium ore bed is placed On sol evenning machine in glove box, in Perovskite-PEDOT:Uniformly coating is prepared by step S301 on PSS calcium titanium ore bed PCBM electron transfer layer precursor solution, and carry out spin coating and obtain the precursor film of PCBM electron transfer layer, spin coating revolving speed is 2000 ~ 4000 revs/min, spin-coating time is 40 ~ 50 seconds;
Step S303:There to be the ITO substrate of precursor film to be placed on the warm table of glove box by the spin coating of step S302 processing, It anneals 15 ~ 20 minutes in nitrogen environment in 60 ~ 80 DEG C and obtains PCBM electron transfer layer;
Step S400:Bphen hole blocking layer is prepared, the specific steps are:
Step S401:5 ~ 7mg powder Bphen is placed in dehydrated alcohol in air, is then placed within the warm table of glove box On, heating stirring dissolves to obtain the Bphen hole blocking layer precursor solution that concentration is 0.5 ~ 0.7mg/mL in nitrogen environment;
Step S402:The ITO substrate that the growth that step S302 is obtained has PCBM electron transfer layer is placed on even in glove box On glue machine, the Bphen hole blocking layer precursor solution that uniformly coating is prepared by step S401 on PCBM electron transfer layer, so Spin coating is carried out afterwards and obtains Bphen hole blocking layer, and spin coating revolving speed is 4000 ~ 6000 revs/min, and spin-coating time is 40 ~ 50 seconds;
Step S500:Ag electrode is prepared, the specific steps are:
At room temperature, growth step S402 obtained has the ITO substrate of Bphen hole blocking layer to be placed on vacuum coating equipment In, 4.5 × 10−4The silver electrode film that a layer thickness is 80 ~ 120nm is deposited with thermal evaporation methods under the high vacuum environment of Pa, Obtaining structure is ITO/PEDOT:PSS/Perovskite-PEDOT:PSS/PCBM/Bphen/Ag's mixes in Perovskite Miscellaneous PEDOT:The perovskite solar battery of PSS.
CN201810723015.9A 2018-07-04 2018-07-04 Preparation method of Perovskite solar cell doped with PEDOT (Polytetrafluoroethylene)/PSS (Polytetrafluoroethylene) in Perovskite Active CN108878662B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810723015.9A CN108878662B (en) 2018-07-04 2018-07-04 Preparation method of Perovskite solar cell doped with PEDOT (Polytetrafluoroethylene)/PSS (Polytetrafluoroethylene) in Perovskite

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810723015.9A CN108878662B (en) 2018-07-04 2018-07-04 Preparation method of Perovskite solar cell doped with PEDOT (Polytetrafluoroethylene)/PSS (Polytetrafluoroethylene) in Perovskite

Publications (2)

Publication Number Publication Date
CN108878662A true CN108878662A (en) 2018-11-23
CN108878662B CN108878662B (en) 2021-09-17

Family

ID=64299063

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810723015.9A Active CN108878662B (en) 2018-07-04 2018-07-04 Preparation method of Perovskite solar cell doped with PEDOT (Polytetrafluoroethylene)/PSS (Polytetrafluoroethylene) in Perovskite

Country Status (1)

Country Link
CN (1) CN108878662B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110854273A (en) * 2019-11-21 2020-02-28 电子科技大学 Organic bulk heterojunction-doped perovskite solar cell and preparation method thereof
CN112687810A (en) * 2021-03-12 2021-04-20 河南师范大学 Preparation method of heterojunction light absorption layer perovskite solar cell

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104934304A (en) * 2015-06-04 2015-09-23 苏州大学 Method for obtaining black cubic crystal system perovskite film through inductive regulation and control of mixed solvent at normal temperature
CN106033795A (en) * 2016-07-18 2016-10-19 河南师范大学 Preparing method for V2O5-and-Bphen-modified perovskite solar cell
CN106575675A (en) * 2014-03-19 2017-04-19 太阳能研究所股份有限公司 Conductive polymer/si interfaces at the backside of solar cells
CN106684247A (en) * 2017-03-15 2017-05-17 中南大学 Perovskite solar cell and preparation method thereof
CN107946466A (en) * 2017-12-07 2018-04-20 暨南大学 Ca-Ti ore type solar cell and its PEDOT:PSS layers of method of modifying
US9966195B1 (en) * 2016-08-10 2018-05-08 The United States Of America, As Represented By The Secretary Of The Air Force High quality, ultra-thin organic-inorganic hybrid perovskite

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106575675A (en) * 2014-03-19 2017-04-19 太阳能研究所股份有限公司 Conductive polymer/si interfaces at the backside of solar cells
CN104934304A (en) * 2015-06-04 2015-09-23 苏州大学 Method for obtaining black cubic crystal system perovskite film through inductive regulation and control of mixed solvent at normal temperature
CN106033795A (en) * 2016-07-18 2016-10-19 河南师范大学 Preparing method for V2O5-and-Bphen-modified perovskite solar cell
US9966195B1 (en) * 2016-08-10 2018-05-08 The United States Of America, As Represented By The Secretary Of The Air Force High quality, ultra-thin organic-inorganic hybrid perovskite
CN106684247A (en) * 2017-03-15 2017-05-17 中南大学 Perovskite solar cell and preparation method thereof
CN107946466A (en) * 2017-12-07 2018-04-20 暨南大学 Ca-Ti ore type solar cell and its PEDOT:PSS layers of method of modifying

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CONG-CONG ZHANG 等: "Passivated perovskite crystallization and stablility in organic-inorganic halide solar cells by doping a donor polymer", 《JOUNAL OF MATERIAL CHEMISTRY A》 *
陈苗苗等: "杂化钙钛矿太阳能电池光吸收层薄膜致密性对其效率影响的研究进展", 《电子元件与材料》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110854273A (en) * 2019-11-21 2020-02-28 电子科技大学 Organic bulk heterojunction-doped perovskite solar cell and preparation method thereof
CN112687810A (en) * 2021-03-12 2021-04-20 河南师范大学 Preparation method of heterojunction light absorption layer perovskite solar cell

Also Published As

Publication number Publication date
CN108878662B (en) 2021-09-17

Similar Documents

Publication Publication Date Title
CN106654020B (en) Bulk heterojunction perovskite thin film and preparation method thereof and solar battery
CN109888105B (en) Passivated perovskite solar cell and preparation method thereof
CN110246967B (en) Method for preparing flexible perovskite solar cell at low temperature
CN106384785B (en) A kind of tin dope methyl ammonium lead iodide perovskite solar cell
Tai et al. Ultrathin Zn2SnO4 (ZTO) passivated ZnO nanocone arrays for efficient and stable perovskite solar cells
CN106611819A (en) Micro-nano structure interface induced growth method for perovskite film of solar cell
CN108807694B (en) Flat perovskite solar cell with ultralow temperature stability and preparation method thereof
CN105470391A (en) Organic inorganic hybrid perovskite film and manufacturing method of perovskite solar cell
CN109461818A (en) A kind of efficient perovskite solar battery and preparation method thereof
CN108365100B (en) Perovskite solar cell and preparation method thereof
CN108574050A (en) A kind of Perovskite-MoS2The preparation method of the perovskite solar cell of bulk heterojunction
CN109728169B (en) Perovskite solar cell doped with functional additive and preparation method thereof
CN105810831B (en) A kind of slicker solder mixing perovskite thin film, preparation method and application
Xie et al. Solvothermal synthesis of highly crystalline SnO2 nanoparticles for flexible perovskite solar cells application
CN109244243A (en) A kind of L-cysteine modification TiO2The methods and applications of electron transfer layer
CN108288675B (en) Iron salt doped cyclone-OMeTAD hole transport layer and solar cell comprising same
CN105428537B (en) Perovskite solar cell based on titanium dioxide/perovskite embedded type composite nanostructure and preparation method thereof
CN107946464A (en) A kind of perovskite solar cell based on barium titanate interface-modifying layer and preparation method thereof
CN105870339B (en) A kind of preparation method for the perovskite thin film for improving purity, reducing pin hole
CN106340587A (en) Perovskite film preparation method and perovskite solar cell
CN109786555A (en) A kind of perovskite solar battery and preparation method
CN114284439A (en) Method for preparing CsPbI3 perovskite thin film and high-efficiency solar cell thereof in high-humidity environment and application
CN107833969B (en) A kind of high efficiency planar heterojunction perovskite thin film solar battery and preparation method
CN107170894B (en) A kind of perovskite solar battery and preparation method thereof
CN108878662A (en) One kind adulterating PEDOT in Perovskite:The preparation method of the perovskite solar battery of PSS

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant