CN108878662B - Preparation method of Perovskite solar cell doped with PEDOT (Polytetrafluoroethylene)/PSS (Polytetrafluoroethylene) in Perovskite - Google Patents

Preparation method of Perovskite solar cell doped with PEDOT (Polytetrafluoroethylene)/PSS (Polytetrafluoroethylene) in Perovskite Download PDF

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CN108878662B
CN108878662B CN201810723015.9A CN201810723015A CN108878662B CN 108878662 B CN108878662 B CN 108878662B CN 201810723015 A CN201810723015 A CN 201810723015A CN 108878662 B CN108878662 B CN 108878662B
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刘志勇
刘凯凯
刘鹏飞
虞登吉
段君杰
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Henan Normal University
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Abstract

本发明公开了一种在Perovskite中掺杂PEDOT:PSS的钙钛矿太阳能电池的制备方法，具体过程为：1）PEDOT:PSS空穴传输层制备；2）Perovskite‑PEDOT:PSS钙钛矿光活性层制备；3）PCBM电子传输层制备；4）Bphen空穴阻挡层制备；5）Ag电极的蒸镀制备。本发明以Perovskite‑PEDOT:PSS作为钙钛矿光活性层可以改善钙钛矿光活型层的形貌，同时由于PEDOT:PSS的空穴传输性以及与Perovskite之间的络合作用，可以有效钝化钙钛矿层的体缺陷和界面缺陷，从而提高了光生载流子的传输效率，因此很大程度上提高了钙钛矿太阳能电池的光电性能。本发明简单易行，材料易得，成本相对较低，并无过高的条件要求，同时制备的太阳能电池器件光电性能良好且光电转换率较高。

Figure 201810723015

The invention discloses a preparation method of a perovskite solar cell doped with PEDOT:PSS in Perovskite. The specific process is: 1) preparation of PEDOT:PSS hole transport layer; 2) Perovskite-PEDOT:PSS perovskite light Preparation of active layer; 3) Preparation of PCBM electron transport layer; 4) Preparation of Bphen hole blocking layer; 5) Preparation of Ag electrode by evaporation. In the present invention, using Perovskite‑PEDOT:PSS as the perovskite photoactive layer can improve the morphology of the perovskite photoactive layer. The bulk and interface defects of the perovskite layer are passivated, thereby improving the transport efficiency of photogenerated carriers, thus greatly improving the optoelectronic performance of perovskite solar cells. The invention is simple and easy to implement, the materials are readily available, the cost is relatively low, and there is no excessive condition requirement, and the solar cell device prepared at the same time has good photoelectric performance and high photoelectric conversion rate.

Figure 201810723015

Description

Preparation method of Perovskite solar cell doped with PEDOT (Polytetrafluoroethylene)/PSS (Polytetrafluoroethylene) in Perovskite
Technical Field
The invention belongs to the technical field of design and preparation of Perovskite solar cells, and particularly relates to a preparation method of a Perovskite solar cell doped with PEDOT (PEDOT-PSS) in Perovskite.
Background
Since people gradually recognize the problems of limited traditional coal resources, pollution caused by thermal power generation and the like, solar cells based on the photovoltaic effect have attracted extensive attention. Perovskite solar cells have been developed since the advent due to their excellent photoelectric properties, and the efficiency and other properties have been continuously refreshed and broken through in a few years. The traditional perovskite solar cell takes iodomethylamine and lead iodide or lead chloride as precursors, and the precursors react to generate a perovskite structure with a cubic structure through a proper stoichiometric ratio. In an inverted structure perovskite solar structure taking iodomethylamine lead chloride as a precursor, certain body defects exist due to the influence of the morphology of the perovskite, and the recombination of photon-generated carriers is caused to a certain extent to influence the transmission of charges, so that the photoelectric performance of a device is influenced. According to the invention, a Perovskite Perovskite layer is doped by taking a classical hole transport material PEDOT: PSS as an additive, and due to the complexing effect between the PEDOT: PSS and the Perovskite, the morphology of the Perovskite layer is improved, the body defect of Perovskite is passivated, so that the charge recombination is reduced, the effective transmission of charges is promoted, and the photoelectric property and the photoelectric conversion efficiency of a battery device taking the Perovskite-PEDOT: PSS as the Perovskite layer are improved. The method does not need to synthesize a new material, is simple and easy to operate, has good effect, and provides a new idea for the perovskite solar cell to go out of a laboratory and go to life application.
Disclosure of Invention
The invention solves the technical problem of providing the preparation method of the Perovskite solar cell which is prepared by doping PEDOT (PSS) in Perovskite and has simple and reliable process and good effect, and the Perovskite solar cell has good photoelectric property and high photoelectric conversion efficiency.
The invention adopts the following technical scheme for solving the technical problems, and the preparation method of the Perovskite solar cell doped with PEDOT and PSS in Perovskite is characterized by comprising the following specific processes:
step S100: PSS hole transport layer, the concrete steps are:
step S101: placing cleaned and hydrophilized ITO glass on a spin coater, uniformly coating PEDOT, namely PSS aqueous solution on the ITO glass, and performing spin coating to obtain a precursor film of a PSS hole transport layer, namely PEDOT, wherein the spin coating rotating speed is 2500-3500 rpm, and the spin coating time is 30-40 seconds;
step S102: placing the ITO substrate of the spin-coating precursor film processed in the step S101 on a heating table, and continuously annealing for 15-30 minutes at the temperature lower than 140 ℃ in an air environment to obtain a PEDOT (Poly ethylene styrene) PSS (Poly ethylene styrene) hole transport layer with uniform thickness;
step S200: the preparation method of the Perovskite-PEDOT PSS Perovskite layer comprises the following specific steps:
step S201: dissolving a PSS aqueous solution and a DMF solution of PEDOT into a mixed solvent with the volume percentage of 1.0-2.0%;
step S202: mixing PbCl2And CH3NH3I, mixing uniformly according to the molar ratio of 1:3 to obtain a mixtureMixing the powder, placing the mixed powder into the mixed solvent prepared in the step S201, placing the mixed powder on a heating table in a glove box, and heating and stirring the mixed powder at a temperature lower than 70 ℃ in a nitrogen atmosphere to dissolve the mixed powder to obtain a mixed solution;
step S203: filtering the mixed solution obtained in the step S202 by using a polytetrafluoroethylene filter with the specification of 0.45 mu m to obtain a yellow and clear Perovskite-PEDOT, PSS Perovskite layer precursor solution;
step S204: placing the ITO substrate with the PEDOT, PSS hole transport layer, which is obtained in the step S102, on a spin coater in a glove box, uniformly coating the Perovskite-PEDOT, PSS Perovskite layer precursor solution obtained in the step S203, on the PEDOT, PSS hole transport layer, and performing spin coating to obtain the Perovskite-PEDOT, wherein the spin coating speed is 3000-5000 r/min, and the spin coating time is 40-50 seconds;
step S205: placing the ITO substrate which is processed in the step S204 and is coated with the precursor film in a heating table in a glove box, annealing the ITO substrate from 30 ℃ to 100-120 ℃ in a gradient manner at the heating rate of 10 ℃/10 minutes, and continuously annealing the ITO substrate for 1.5 hours at the temperature lower than 120 ℃ to obtain a brownish black Perovskite-PEDOT, namely a PSS Perovskite layer;
step S300: the preparation method of the PCBM electronic transmission layer comprises the following specific steps:
step S301: placing 15-25 mg of dark brown powder PCBM in chlorobenzene in a glove box, placing the chlorobenzene on a heating table, heating and stirring the mixture at the temperature lower than 60 ℃ in a nitrogen environment to dissolve the mixture, and finally obtaining a PCBM electron transport layer precursor solution with the concentration of 20 +/-5 mg/mL;
step S302: placing the ITO substrate with the grown Perovskite-PEDOT, PSS Perovskite layer, obtained in the step S205 on a spin coater in a glove box, uniformly coating the PCBM electronic transmission layer precursor solution prepared in the step S301 on the Perovskite-PEDOT, PSS Perovskite layer, and performing spin coating to obtain a precursor film of the PCBM electronic transmission layer, wherein the spin coating speed is 2000-4000 rpm, and the spin coating time is 40-50 seconds;
step S303: placing the ITO substrate which is processed in the step S302 and is coated with the precursor film in a spin mode on a heating table of a glove box, and annealing for 15-20 minutes at the temperature of 60-80 ℃ in a nitrogen environment to obtain a PCBM electronic transmission layer;
step S400: the method for preparing the Bphen hole blocking layer comprises the following specific steps:
step S401: placing 5-7 mg of Bphen powder in absolute ethyl alcohol in the air, then placing the Bphen powder on a heating table of a glove box, and heating, stirring and dissolving the Bphen powder in a nitrogen environment to obtain a Bphen hole blocking layer precursor solution with the concentration of 0.5-0.7 mg/mL;
step S402: placing the ITO substrate with the PCBM electron transport layer grown, obtained in the step S303, on a spin coater in a glove box, uniformly coating the PCBM electron transport layer with the Bphen hole barrier layer precursor solution prepared in the step S401, and then performing spin coating to obtain a Bphen hole barrier layer, wherein the spin coating rotation speed is 4000-6000 rpm, and the spin coating time is 40-50 seconds;
step S500: the Ag electrode is prepared by the following specific steps:
the ITO substrate grown with the Bphen hole blocking layer obtained in step S402 is placed in a vacuum coater at room temperature and at a temperature of 4.5X 10−4And evaporating a silver electrode film with the thickness of 80-120 nm in a Pa high-vacuum environment in a thermal evaporation mode to obtain the Perovskite solar cell with the structure of ITO/PEDOT, PSS/Perovskite-PEDOT, PSS/PCBM/Bphen/Ag, wherein the Perovskite is doped with the PEDOT, PSS.
The invention has the following beneficial effects:
1. the invention prepares a battery device by a solution spin coating method, and prepares Perovskite solar energy electricity with an inverted structure taking Perovskite-PEDOT: PSS as a Perovskite layer on an ITO substrate which is cleaned and subjected to hydrophilic treatment. After doping of PEDOT and PSS, the morphology of the perovskite layer is improved, and meanwhile, due to the passivation effect of PEDOT and PSS on the defects of the perovskite layer, the charge transmission is effectively promoted, so that the photoelectric property and the photoelectric conversion efficiency of the perovskite solar cell are greatly improved;
2. PSS Perovskite layer, the film crystallinity is good, other miscellaneous peaks except the Perovskite characteristic peak do not appear (as shown in figure 1);
3. the Perovskite-PEDOT is a PSS Perovskite layer, has good appearance, large grain size, compact arrangement and smooth surface, and has no obvious holes and pinholes (as shown in figure 2);
4. the Perovskite solar cell prepared by taking Perovskite-PEDOT: PSS as the Perovskite layer has better photoelectric property and photoelectric conversion efficiency (as shown in figure 3).
Drawings
FIG. 1 is an XRD pattern of Perovskite-PEDOT: PSS Perovskite layer.
FIG. 2 is an SEM image of Perovskite-PEDOT PSS Perovskite layer.
FIG. 3 is a Perovskite-PEDOT PSS Perovskite solar cellJ-VFigure (a).
Detailed Description
The present invention is described in further detail below with reference to examples, but it should not be construed that the scope of the above subject matter of the present invention is limited to the following examples, and that all the technologies realized based on the above subject matter of the present invention belong to the scope of the present invention.
Example 1
Step S100: PSS hole transport layer, the concrete steps are:
step S101: placing cleaned and hydrophilized ITO glass on a spin coater, uniformly coating PEDOT, namely PSS aqueous solution on the ITO glass, and performing spin coating to obtain a precursor film of a PSS hole transport layer, wherein the spin coating speed is 3500 rpm, and the spin coating time is 40 seconds;
step S102: placing the ITO substrate of the spin-coating precursor film processed in the step S101 on a heating table, and continuously annealing for 20 minutes at 130 ℃ in an air environment to obtain a PEDOT (PSS) hole transport layer with uniform thickness;
step S200: the preparation method of the Perovskite-PEDOT PSS Perovskite layer comprises the following specific steps:
step S201: dissolving PEDOT, PSS aqueous solution and DMF solution mutually to prepare a mixed solvent with the volume percentage of 1.0 percent;
step S202: mixing PbCl2And CH3NH3I, uniformly mixing the components according to a molar ratio of 1:3 to obtain mixed powder, placing the mixed powder into the mixed solvent prepared in the step S201, placing the mixed solvent on a heating table in a glove box, and heating the mixed solvent in the glove boxHeating and stirring at 70 ℃ in nitrogen atmosphere to dissolve to obtain a mixed solution;
step S203: filtering the mixed solution obtained in the step S202 by using a polytetrafluoroethylene filter with the specification of 0.45 mu m to obtain a yellow and clear Perovskite-PEDOT, PSS Perovskite layer precursor solution;
step S204: placing the ITO substrate with the PEDOT, PSS hole transport layer, which is obtained in the step S102, on a spin coater in a glove box, uniformly coating the Perovskite-PEDOT, PSS Perovskite layer precursor solution obtained in the step S203, on the PEDOT, PSS hole transport layer, and performing spin coating to obtain the Perovskite-PEDOT, wherein the spin coating speed is 3000 r/min, and the spin coating time is 40 seconds;
step S205: placing the ITO substrate which is processed in the step S204 and is coated with the precursor film in a heating table in a glove box, annealing the ITO substrate from 30 ℃ to 110 ℃ in a gradient manner at the heating rate of 10 ℃/10 minutes, and continuously annealing the ITO substrate at the constant temperature of 110 ℃ for 1.5 hours to obtain a brownish black Perovskite-PEDOT, namely a PSS Perovskite layer;
step S300: the preparation method of the PCBM electronic transmission layer comprises the following specific steps:
step S301: placing 15mg of dark brown powder PCBM in chlorobenzene in a glove box, placing the chlorobenzene on a heating table, heating and stirring the mixture at 60 ℃ in a nitrogen environment to dissolve the PCBM, and finally obtaining a PCBM electron transport layer precursor solution with the concentration of 20 mg/mL;
step S302: placing the ITO substrate with the grown Perovskite-PEDOT, PSS Perovskite layer, obtained in the step S205 on a spin coater in a glove box, uniformly coating the PCBM electronic transmission layer precursor solution prepared in the step S301 on the Perovskite-PEDOT, PSS Perovskite layer, and performing spin coating to obtain a precursor film of the PCBM electronic transmission layer, wherein the spin coating speed is 3000 r/min, and the spin coating time is 40 seconds;
step S303: placing the ITO substrate which is processed in the step S302 and is coated with the precursor film in a spin mode on a heating table of a glove box, and annealing for 20 minutes at 60 ℃ in a nitrogen environment to obtain a PCBM electronic transmission layer;
step S400: the method for preparing the Bphen hole blocking layer comprises the following specific steps:
step S401: placing 5mg of powder Bphen in newly-unsealed absolute ethyl alcohol in air, then placing the powder Bphen on a heating table of a glove box, and heating, stirring and dissolving the powder Bphen in a nitrogen environment to obtain a Bphen hole blocking layer precursor solution with the concentration of 0.5 mg/mL;
step S402: placing the ITO substrate with the PCBM electron transport layer grown, obtained in the step S303, on a spin coater in a glove box, uniformly coating the PCBM electron transport layer with the Bphen hole barrier layer precursor solution prepared in the step S401, and then performing spin coating to obtain a Bphen hole barrier layer, wherein the spin coating speed is 4000 revolutions per minute, and the spin coating time is 40 seconds;
step S500: the Ag electrode is prepared by the following specific steps:
the ITO substrate grown with the Bphen hole blocking layer obtained in step S402 is placed in a vacuum coater at room temperature and at a temperature of 4.5X 10−4And evaporating a silver electrode film with the thickness of 80nm in a Pa high-vacuum environment in a thermal evaporation mode to obtain the Perovskite solar cell with the structure of ITO/PEDOT, PSS/Perovskite-PEDOT, PSS/PCBM/Bphen/Ag, wherein the Perovskite is doped with the PEDOT, PSS.
FIG. 1 is XRD data for Perovskite-PEDOT PSS Perovskite layer prepared in this example, which shows that the sample crystallizes well and no other miscellaneous peaks except for the Perovskite characteristic peak are present.
Example 2
Step S100: PSS hole transport layer, the concrete steps are:
step S101: placing cleaned and hydrophilized ITO glass on a spin coater, uniformly coating PEDOT, namely PSS aqueous solution on the ITO glass, and performing spin coating to obtain a precursor film of a PSS hole transport layer, wherein the spin coating speed is 3000 r/min, and the spin coating time is 30 seconds;
step S102: placing the ITO substrate of the spin-coating precursor film processed in the step S101 on a heating table, and continuously annealing for 15 minutes at 130 ℃ in an air environment to obtain a PEDOT (PSS) hole transport layer with uniform thickness;
step S200: the preparation method of the Perovskite-PEDOT PSS Perovskite layer comprises the following specific steps:
step S201: dissolving PEDOT, PSS aqueous solution and DMF solution mutually to prepare a mixed solvent with the volume percentage of 1.5 percent;
step S202: mixing PbCl2And CH3NH3I, uniformly mixing the raw materials according to a molar ratio of 1:3 to obtain mixed powder, placing the mixed powder into the mixed solvent prepared in the step S201, placing the mixed powder on a heating table in a glove box, and heating, stirring and dissolving the mixed powder at 60 ℃ in a nitrogen atmosphere to obtain a mixed solution;
step S203: filtering the mixed solution obtained in the step S202 by using a polytetrafluoroethylene filter with the specification of 0.45 mu m to obtain a yellow and clear Perovskite-PEDOT, PSS Perovskite layer precursor solution;
step S204: placing the ITO substrate with the PEDOT, PSS hole transport layer, which is obtained in the step S102, on a spin coater in a glove box, uniformly coating the Perovskite-PEDOT, PSS Perovskite layer precursor solution obtained in the step S203, on the PEDOT, PSS hole transport layer, and performing spin coating to obtain the Perovskite-PEDOT, wherein the spin coating speed is 4000 revolutions per minute, and the spin coating time is 40 seconds;
step S205: placing the ITO substrate which is processed in the step S204 and is coated with the precursor film in a heating table in a glove box, annealing the ITO substrate from 30 ℃ to 100 ℃ in a gradient manner at the heating rate of 10 ℃/10 minutes, and continuously annealing the ITO substrate at the constant temperature of 100 ℃ for 1.5 hours to obtain a brownish black Perovskite-PEDOT, namely a PSS Perovskite layer;
step S300: the preparation method of the PCBM electronic transmission layer comprises the following specific steps:
step S301: placing 20mg of dark brown powder PCBM in chlorobenzene in a glove box, placing the chlorobenzene on a heating table, heating and stirring the mixture at 60 ℃ in a nitrogen environment to dissolve the PCBM, and finally obtaining a PCBM electron transport layer precursor solution with the concentration of 20 mg/mL;
step S302: placing the ITO substrate with the grown Perovskite-PEDOT, PSS Perovskite layer, obtained in the step S205 on a spin coater in a glove box, uniformly coating the PCBM electronic transmission layer precursor solution prepared in the step S301 on the Perovskite-PEDOT, PSS Perovskite layer, and performing spin coating to obtain a precursor film of the PCBM electronic transmission layer, wherein the spin coating speed is 2000 rpm, and the spin coating time is 40 seconds;
step S303: placing the ITO substrate which is processed in the step S302 and is coated with the precursor film in a spin mode on a heating table of a glove box, and annealing for 20 minutes at 60 ℃ in a nitrogen environment to obtain a PCBM electronic transmission layer;
step S400: the method for preparing the Bphen hole blocking layer comprises the following specific steps:
step S401: placing 7mg of powder Bphen in newly-unsealed absolute ethyl alcohol in air, then placing the powder Bphen on a heating table of a glove box, and heating, stirring and dissolving the powder Bphen in a nitrogen environment to obtain a Bphen hole blocking layer precursor solution with the concentration of 0.7 mg/mL;
step S402: placing the ITO substrate with the PCBM electron transport layer grown, obtained in the step S303, on a spin coater in a glove box, uniformly coating the PCBM electron transport layer with the Bphen hole barrier layer precursor solution prepared in the step S401, and then performing spin coating to obtain a Bphen hole barrier layer, wherein the spin coating speed is 4000 revolutions per minute, and the spin coating time is 40 seconds;
step S500: the Ag electrode is prepared by the following specific steps:
the ITO substrate grown with the Bphen hole blocking layer obtained in step S402 is placed in a vacuum coater at room temperature and at a temperature of 4.5X 10−4And evaporating a silver electrode film with the thickness of 80nm in a Pa high-vacuum environment in a thermal evaporation mode to obtain the Perovskite solar cell with the structure of ITO/PEDOT, PSS/Perovskite-PEDOT, PSS/PCBM/Bphen/Ag, wherein the Perovskite is doped with the PEDOT, PSS.
FIG. 2 is an SEM image of the surface of the film of Perovskite-PEDOT PSS Perovskite layer prepared in this example, which shows that the sample has large grain size, dense arrangement and smooth surface.
Example 3
Step S100: PSS hole transport layer, the concrete steps are:
step S101: placing cleaned and hydrophilized ITO glass on a spin coater, uniformly coating PEDOT, namely PSS aqueous solution on the ITO glass, and performing spin coating to obtain a precursor film of a PSS hole transport layer, wherein the spin coating speed is 2500 rpm, and the spin coating time is 30 seconds;
step S102: placing the ITO substrate of the spin-coating precursor film processed in the step S101 on a heating table, and continuously annealing for 15 minutes at 130 ℃ in an air environment to obtain a PEDOT (PSS) hole transport layer with uniform thickness;
step S200: the preparation method of the Perovskite-PEDOT PSS Perovskite layer comprises the following specific steps:
step S201: dissolving PEDOT, PSS aqueous solution and DMF solution mutually to prepare a mixed solvent with the volume percentage of 1.5 percent;
step S202: mixing PbCl2And CH3NH3I, uniformly mixing the raw materials according to a molar ratio of 1:3 to obtain mixed powder, placing the mixed powder into the mixed solvent prepared in the step S201, placing the mixed powder on a heating table in a glove box, and heating, stirring and dissolving the mixed powder at 60 ℃ in a nitrogen atmosphere to obtain a mixed solution;
step S203: filtering the mixed solution obtained in the step S202 by using a polytetrafluoroethylene filter with the specification of 0.45 mu m to obtain a yellow and clear Perovskite-PEDOT, PSS Perovskite layer precursor solution;
step S204: placing the ITO substrate with the PEDOT, PSS hole transport layer, which is obtained in the step S102, on a spin coater in a glove box, uniformly coating the Perovskite-PEDOT, PSS Perovskite layer precursor solution obtained in the step S203, on the PEDOT, PSS hole transport layer, and performing spin coating to obtain the Perovskite-PEDOT, wherein the spin coating speed is 5000 r/min, and the spin coating time is 50 seconds;
step S205: placing the ITO substrate which is processed in the step S204 and is coated with the precursor film in a heating table in a glove box, annealing the ITO substrate from 30 ℃ to 100 ℃ in a gradient manner at the heating rate of 10 ℃/10 minutes, and continuously annealing the ITO substrate at the constant temperature of 100 ℃ for 1.5 hours to obtain a brownish black Perovskite-PEDOT, namely a PSS Perovskite layer;
step S300: the preparation method of the PCBM electronic transmission layer comprises the following specific steps:
step S301: placing 20mg of dark brown powder PCBM in chlorobenzene in a glove box, placing the chlorobenzene on a heating table, heating and stirring the mixture at 60 ℃ in a nitrogen environment to dissolve the PCBM, and finally obtaining a PCBM electron transport layer precursor solution with the concentration of 20 mg/mL;
step S302: placing the ITO substrate with the grown Perovskite-PEDOT, PSS Perovskite layer, obtained in the step S205 on a spin coater in a glove box, uniformly coating the PCBM electronic transmission layer precursor solution prepared in the step S301 on the Perovskite-PEDOT, PSS Perovskite layer, and performing spin coating to obtain a precursor film of the PCBM electronic transmission layer, wherein the spin coating speed is 2000 rpm, and the spin coating time is 40 seconds;
step S303: placing the ITO substrate which is processed in the step S302 and is coated with the precursor film in a spin mode on a heating table of a glove box, and annealing for 20 minutes at 60 ℃ in a nitrogen environment to obtain a PCBM electronic transmission layer;
step S400: the method for preparing the Bphen hole blocking layer comprises the following specific steps:
step S401: placing 7mg of powder Bphen in newly-unsealed absolute ethyl alcohol in air, then placing the powder Bphen on a heating table of a glove box, and heating, stirring and dissolving the powder Bphen in a nitrogen environment to obtain a Bphen hole blocking layer precursor solution with the concentration of 0.7 mg/mL;
step S402: placing the ITO substrate with the PCBM electron transport layer grown, obtained in the step S303, on a spin coater in a glove box, uniformly coating the PCBM electron transport layer with the Bphen hole barrier layer precursor solution prepared in the step S401, and then performing spin coating to obtain a Bphen hole barrier layer, wherein the spin coating speed is 4000 revolutions per minute, and the spin coating time is 40 seconds;
step S500: the Ag electrode is prepared by the following specific steps:
the ITO substrate grown with the Bphen hole blocking layer obtained in step S402 is placed in a vacuum coater at room temperature and at a temperature of 4.5X 10−4And evaporating a silver electrode film with the thickness of 120nm in a Pa high-vacuum environment in a thermal evaporation mode to obtain the Perovskite solar cell with the structure of ITO/PEDOT, PSS/Perovskite-PEDOT, PSS/PCBM/Bphen/Ag, wherein the Perovskite is doped with the PEDOT, PSS.
The Perovskite-PEDOT PSS Perovskite solar cell prepared in the example is placed in a J-V test system for photoelectric property test, and as shown in FIG. 3, the Perovskite solar cell prepared in the example can obtain 17.5% photoelectric conversion efficiency.
The foregoing embodiments illustrate the principles, principal features and advantages of the invention, and it will be understood by those skilled in the art that the invention is not limited to the foregoing embodiments, which are merely illustrative of the principles of the invention, and that various changes and modifications may be made therein without departing from the scope of the principles of the invention.

Claims (1)

1.一种在Perovskite中掺杂PEDOT:PSS的钙钛矿太阳能电池的制备方法，其特征在于具体过程为：1. a preparation method of the perovskite solar cell doped with PEDOT:PSS in Perovskite, is characterized in that concrete process is: 步骤S100：制备PEDOT:PSS空穴传输层，具体步骤为：Step S100: preparing a PEDOT:PSS hole transport layer, the specific steps are: 步骤S101：将经过清洗和亲水化处理的ITO玻璃放置在匀胶机上，在ITO玻璃上均匀涂覆PEDOT:PSS水溶液并进行旋涂得到PEDOT:PSS空穴传输层的前驱膜，旋涂转速为2500~3500转/分，旋涂时间为30~40秒；Step S101: placing the cleaned and hydrophilized ITO glass on a glue spinner, uniformly coating the PEDOT:PSS aqueous solution on the ITO glass and spin-coating to obtain a precursor film of the PEDOT:PSS hole transport layer. It is 2500~3500 rpm, and the spin coating time is 30~40 seconds; 步骤S102：将经过步骤S101处理的旋涂前驱膜的ITO基底放置在加热台上，在空气环境中以低于140℃的温度持续退火15~30分钟得到厚度均匀的PEDOT:PSS空穴传输层；Step S102: Place the ITO substrate of the spin-coated precursor film processed in step S101 on a heating table, and continue annealing at a temperature lower than 140° C. for 15 to 30 minutes in an air environment to obtain a PEDOT:PSS hole transport layer with a uniform thickness ; 步骤S200：制备Perovskite-PEDOT:PSS钙钛矿层，具体步骤为：Step S200: preparing a Perovskite-PEDOT:PSS perovskite layer, the specific steps are: 步骤S201：将PEDOT:PSS水溶液与DMF溶液互溶配制成体积百分比为1.0%~2.0%的混合溶剂；Step S201: The PEDOT:PSS aqueous solution and the DMF solution are mutually dissolved to prepare a mixed solvent with a volume percentage of 1.0% to 2.0%; 步骤S202：将PbCl2和CH3NH3I按照摩尔比为1:3混合均匀得到混合粉末，并将上述混合粉末置于经过步骤S201制备的混合溶剂中，放置于手套箱内的加热台上，在氮气气氛中以低于70℃的温度加热搅拌溶解得到混合溶液；Step S202: Mix PbCl 2 and CH 3 NH 3 I according to a molar ratio of 1:3 to obtain a mixed powder, and place the mixed powder in the mixed solvent prepared in step S201 and place it on a heating table in the glove box , in a nitrogen atmosphere at a temperature lower than 70 ° C, heating and stirring to dissolve to obtain a mixed solution; 步骤S203：将步骤S202所得到的混合溶液用0.45μm规格的聚四氟乙烯过滤器进行过滤得到黄色澄清的Perovskite-PEDOT:PSS钙钛矿层前驱溶液；Step S203: filter the mixed solution obtained in step S202 with a 0.45 μm polytetrafluoroethylene filter to obtain a yellow and clear Perovskite-PEDOT:PSS perovskite layer precursor solution; 步骤S204：将步骤S102得到的生长有PEDOT:PSS空穴传输层的ITO基底放置于手套箱中的匀胶机上，在PEDOT:PSS空穴传输层上均匀涂覆步骤S203得到的Perovskite-PEDOT:PSS钙钛矿层前驱溶液并进行旋涂得到Perovskite-PEDOT:PSS钙钛矿层的前驱膜，旋涂转速为3000~5000转/分，旋涂时间为40~50秒；Step S204: The ITO substrate with the PEDOT:PSS hole transport layer obtained in step S102 is placed on a glue spinner in the glove box, and the Perovskite-PEDOT obtained in step S203 is uniformly coated on the PEDOT:PSS hole transport layer: The precursor solution of the PSS perovskite layer was spin-coated to obtain the precursor film of the Perovskite-PEDOT:PSS perovskite layer. 步骤S205：将经过步骤S204处理的旋涂有前驱膜的ITO基底放置于手套箱中的加热台上，以10℃/10分钟的升温速率从30℃梯度退火至100~120℃，并在低于120℃的温度下持续退火1.5小时得到棕黑色的Perovskite-PEDOT:PSS钙钛矿层；Step S205: The ITO substrate spin-coated with the precursor film processed in step S204 is placed on the heating table in the glove box, and annealed in a gradient from 30°C to 100-120°C at a heating rate of 10°C/10 minutes. Continuous annealing at 120 °C for 1.5 hours to obtain a brown-black Perovskite-PEDOT:PSS perovskite layer; 步骤S300：制备PCBM电子传输层，具体步骤为：Step S300: preparing the PCBM electron transport layer, the specific steps are: 步骤S301：在手套箱中将15~25mg深棕色粉末PCBM置于氯苯中，放置在加热台上，在氮气环境中以低于60℃的温度加热搅拌溶解，最终得到浓度为20±5mg/mL的PCBM电子传输层前驱溶液；Step S301: Place 15~25mg of dark brown powder PCBM in chlorobenzene in a glove box, place it on a heating table, heat and stir to dissolve at a temperature lower than 60°C in a nitrogen environment, and finally obtain a concentration of 20±5mg/ mL of PCBM electron transport layer precursor solution; 步骤S302：将步骤S205得到的生长有Perovskite-PEDOT:PSS钙钛矿层的ITO基底放置在手套箱中的匀胶机上，在Perovskite-PEDOT:PSS钙钛矿层上均匀涂覆经过步骤S301制备的PCBM电子传输层前驱溶液，并进行旋涂得到PCBM电子传输层的前驱膜，旋涂转速为2000~4000转/分，旋涂时间为40~50秒；Step S302: The ITO substrate with the Perovskite-PEDOT:PSS perovskite layer grown in step S205 is placed on a glue spinner in the glove box, and the PCBM prepared in step S301 is uniformly coated on the Perovskite-PEDOT:PSS perovskite layer Electron transport layer precursor solution, and spin coating to obtain the precursor film of PCBM electron transport layer, the spin coating speed is 2000~4000 rpm, and the spin coating time is 40~50 seconds; 步骤S303：将经过步骤S302处理的旋涂有前驱膜的ITO基底放置于手套箱的加热台上，在氮气环境中于60~80℃退火15~20分钟得到PCBM电子传输层；Step S303: placing the spin-coated ITO substrate with the precursor film processed in step S302 on the heating table of the glove box, and annealing at 60-80° C. for 15-20 minutes in a nitrogen environment to obtain a PCBM electron transport layer; 步骤S400：制备Bphen空穴阻挡层，具体步骤为：Step S400: preparing a Bphen hole blocking layer, the specific steps are: 步骤S401：在空气中将5~7mg粉末Bphen置于无水乙醇中，然后放置在手套箱的加热台上，在氮气环境中加热搅拌溶解得到浓度为0.5~0.7mg/mL的Bphen空穴阻挡层前驱溶液；Step S401: Place 5-7 mg of powdered Bphen in anhydrous ethanol in the air, then place it on the heating table of the glove box, and heat and stir to dissolve in a nitrogen environment to obtain a Bphen hole blocking concentration of 0.5-0.7 mg/mL. layer precursor solution; 步骤S402：将步骤S303得到的生长有PCBM电子传输层的ITO基底放置在手套箱中的匀胶机上，在PCBM电子传输层上均匀涂覆经过步骤S401制备的Bphen空穴阻挡层前驱溶液，然后进行旋涂得到Bphen空穴阻挡层，旋涂转速为4000~6000转/分，旋涂时间为40~50秒；Step S402: The ITO substrate with the PCBM electron transport layer grown in Step S303 is placed on the gluing machine in the glove box, and the Bphen hole blocking layer precursor solution prepared in Step S401 is uniformly coated on the PCBM electron transport layer, and then Spin-coating is performed to obtain the Bphen hole blocking layer, the spin-coating speed is 4000-6000 rpm, and the spin-coating time is 40-50 seconds; 步骤S500：制备Ag电极，具体步骤为：Step S500: preparing Ag electrodes, the specific steps are: 在室温下，将步骤S402得到的生长有Bphen空穴阻挡层的ITO基底放置在真空镀膜机中，在 4.5×10−4Pa的高真空环境下以热蒸发方式蒸镀一层厚度为80~120nm的银电极薄膜，得到结构为ITO/PEDOT:PSS/Perovskite-PEDOT:PSS/PCBM/Bphen/Ag的在Perovskite中掺杂PEDOT:PSS的钙钛矿太阳能电池。At room temperature, the ITO substrate with the Bphen hole blocking layer obtained in step S402 was placed in a vacuum coating machine, and a layer of 80~ A 120 nm silver electrode film was used to obtain a perovskite solar cell doped with PEDOT:PSS in Perovskite with the structure ITO/PEDOT:PSS/Perovskite-PEDOT:PSS/PCBM/Bphen/Ag.
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