CN108878662B - Preparation method of Perovskite solar cell doped with PEDOT (Polytetrafluoroethylene)/PSS (Polytetrafluoroethylene) in Perovskite - Google Patents
Preparation method of Perovskite solar cell doped with PEDOT (Polytetrafluoroethylene)/PSS (Polytetrafluoroethylene) in Perovskite Download PDFInfo
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- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 title claims abstract description 92
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- -1 Polytetrafluoroethylene Polymers 0.000 title claims abstract description 16
- 229920001343 polytetrafluoroethylene Polymers 0.000 title claims abstract description 10
- 239000004810 polytetrafluoroethylene Substances 0.000 title claims abstract description 10
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims abstract description 49
- 230000005525 hole transport Effects 0.000 claims abstract description 28
- 230000005540 biological transmission Effects 0.000 claims abstract description 24
- 230000000903 blocking effect Effects 0.000 claims abstract description 16
- 229920000144 PEDOT:PSS Polymers 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000001704 evaporation Methods 0.000 claims abstract description 6
- 238000004528 spin coating Methods 0.000 claims description 66
- 239000002243 precursor Substances 0.000 claims description 58
- 238000010438 heat treatment Methods 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 46
- 239000000243 solution Substances 0.000 claims description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 30
- 239000000843 powder Substances 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 20
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 239000011812 mixed powder Substances 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- 238000003756 stirring Methods 0.000 claims description 15
- 239000012046 mixed solvent Substances 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 10
- 239000011259 mixed solution Substances 0.000 claims description 10
- 238000002156 mixing Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 3
- 230000000536 complexating effect Effects 0.000 abstract description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- JAHFQMBRFYOPNR-UHFFFAOYSA-N iodomethanamine Chemical compound NCI JAHFQMBRFYOPNR-UHFFFAOYSA-N 0.000 description 1
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
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Abstract
The invention discloses a preparation method of a Perovskite solar cell doped with PEDOT (Polytetrafluoroethylene)/PSS (Poly Sulfonyl Ether-Ether) in Perovskite, which comprises the following specific steps: 1) preparing a PSS hole transport layer; 2) preparing a Perovskite-PEDOT PSS Perovskite photoactive layer; 3) preparing a PCBM electron transport layer; 4) preparing a Bphen hole blocking layer; 5) and (5) preparing an Ag electrode by evaporation. According to the invention, the appearance of the Perovskite photoactive layer can be improved by taking the Perovskite-PEDOT: PSS as the Perovskite photoactive layer, and meanwhile, due to the hole transport property of the PEDOT: PSS and the complexing effect between the PEDOT: PSS and the Perovskite, the bulk defect and the interface defect of the Perovskite layer can be effectively passivated, so that the transmission efficiency of a photon-generated carrier is improved, and the photoelectric property of the Perovskite solar cell is improved to a great extent. The method is simple and easy to implement, the materials are easy to obtain, the cost is relatively low, no high condition requirement exists, and meanwhile, the prepared solar cell device is good in photoelectric performance and high in photoelectric conversion rate.
Description
Technical Field
The invention belongs to the technical field of design and preparation of Perovskite solar cells, and particularly relates to a preparation method of a Perovskite solar cell doped with PEDOT (PEDOT-PSS) in Perovskite.
Background
Since people gradually recognize the problems of limited traditional coal resources, pollution caused by thermal power generation and the like, solar cells based on the photovoltaic effect have attracted extensive attention. Perovskite solar cells have been developed since the advent due to their excellent photoelectric properties, and the efficiency and other properties have been continuously refreshed and broken through in a few years. The traditional perovskite solar cell takes iodomethylamine and lead iodide or lead chloride as precursors, and the precursors react to generate a perovskite structure with a cubic structure through a proper stoichiometric ratio. In an inverted structure perovskite solar structure taking iodomethylamine lead chloride as a precursor, certain body defects exist due to the influence of the morphology of the perovskite, and the recombination of photon-generated carriers is caused to a certain extent to influence the transmission of charges, so that the photoelectric performance of a device is influenced. According to the invention, a Perovskite Perovskite layer is doped by taking a classical hole transport material PEDOT: PSS as an additive, and due to the complexing effect between the PEDOT: PSS and the Perovskite, the morphology of the Perovskite layer is improved, the body defect of Perovskite is passivated, so that the charge recombination is reduced, the effective transmission of charges is promoted, and the photoelectric property and the photoelectric conversion efficiency of a battery device taking the Perovskite-PEDOT: PSS as the Perovskite layer are improved. The method does not need to synthesize a new material, is simple and easy to operate, has good effect, and provides a new idea for the perovskite solar cell to go out of a laboratory and go to life application.
Disclosure of Invention
The invention solves the technical problem of providing the preparation method of the Perovskite solar cell which is prepared by doping PEDOT (PSS) in Perovskite and has simple and reliable process and good effect, and the Perovskite solar cell has good photoelectric property and high photoelectric conversion efficiency.
The invention adopts the following technical scheme for solving the technical problems, and the preparation method of the Perovskite solar cell doped with PEDOT and PSS in Perovskite is characterized by comprising the following specific processes:
step S100: PSS hole transport layer, the concrete steps are:
step S101: placing cleaned and hydrophilized ITO glass on a spin coater, uniformly coating PEDOT, namely PSS aqueous solution on the ITO glass, and performing spin coating to obtain a precursor film of a PSS hole transport layer, namely PEDOT, wherein the spin coating rotating speed is 2500-3500 rpm, and the spin coating time is 30-40 seconds;
step S102: placing the ITO substrate of the spin-coating precursor film processed in the step S101 on a heating table, and continuously annealing for 15-30 minutes at the temperature lower than 140 ℃ in an air environment to obtain a PEDOT (Poly ethylene styrene) PSS (Poly ethylene styrene) hole transport layer with uniform thickness;
step S200: the preparation method of the Perovskite-PEDOT PSS Perovskite layer comprises the following specific steps:
step S201: dissolving a PSS aqueous solution and a DMF solution of PEDOT into a mixed solvent with the volume percentage of 1.0-2.0%;
step S202: mixing PbCl2And CH3NH3I, mixing uniformly according to the molar ratio of 1:3 to obtain a mixtureMixing the powder, placing the mixed powder into the mixed solvent prepared in the step S201, placing the mixed powder on a heating table in a glove box, and heating and stirring the mixed powder at a temperature lower than 70 ℃ in a nitrogen atmosphere to dissolve the mixed powder to obtain a mixed solution;
step S203: filtering the mixed solution obtained in the step S202 by using a polytetrafluoroethylene filter with the specification of 0.45 mu m to obtain a yellow and clear Perovskite-PEDOT, PSS Perovskite layer precursor solution;
step S204: placing the ITO substrate with the PEDOT, PSS hole transport layer, which is obtained in the step S102, on a spin coater in a glove box, uniformly coating the Perovskite-PEDOT, PSS Perovskite layer precursor solution obtained in the step S203, on the PEDOT, PSS hole transport layer, and performing spin coating to obtain the Perovskite-PEDOT, wherein the spin coating speed is 3000-5000 r/min, and the spin coating time is 40-50 seconds;
step S205: placing the ITO substrate which is processed in the step S204 and is coated with the precursor film in a heating table in a glove box, annealing the ITO substrate from 30 ℃ to 100-120 ℃ in a gradient manner at the heating rate of 10 ℃/10 minutes, and continuously annealing the ITO substrate for 1.5 hours at the temperature lower than 120 ℃ to obtain a brownish black Perovskite-PEDOT, namely a PSS Perovskite layer;
step S300: the preparation method of the PCBM electronic transmission layer comprises the following specific steps:
step S301: placing 15-25 mg of dark brown powder PCBM in chlorobenzene in a glove box, placing the chlorobenzene on a heating table, heating and stirring the mixture at the temperature lower than 60 ℃ in a nitrogen environment to dissolve the mixture, and finally obtaining a PCBM electron transport layer precursor solution with the concentration of 20 +/-5 mg/mL;
step S302: placing the ITO substrate with the grown Perovskite-PEDOT, PSS Perovskite layer, obtained in the step S205 on a spin coater in a glove box, uniformly coating the PCBM electronic transmission layer precursor solution prepared in the step S301 on the Perovskite-PEDOT, PSS Perovskite layer, and performing spin coating to obtain a precursor film of the PCBM electronic transmission layer, wherein the spin coating speed is 2000-4000 rpm, and the spin coating time is 40-50 seconds;
step S303: placing the ITO substrate which is processed in the step S302 and is coated with the precursor film in a spin mode on a heating table of a glove box, and annealing for 15-20 minutes at the temperature of 60-80 ℃ in a nitrogen environment to obtain a PCBM electronic transmission layer;
step S400: the method for preparing the Bphen hole blocking layer comprises the following specific steps:
step S401: placing 5-7 mg of Bphen powder in absolute ethyl alcohol in the air, then placing the Bphen powder on a heating table of a glove box, and heating, stirring and dissolving the Bphen powder in a nitrogen environment to obtain a Bphen hole blocking layer precursor solution with the concentration of 0.5-0.7 mg/mL;
step S402: placing the ITO substrate with the PCBM electron transport layer grown, obtained in the step S303, on a spin coater in a glove box, uniformly coating the PCBM electron transport layer with the Bphen hole barrier layer precursor solution prepared in the step S401, and then performing spin coating to obtain a Bphen hole barrier layer, wherein the spin coating rotation speed is 4000-6000 rpm, and the spin coating time is 40-50 seconds;
step S500: the Ag electrode is prepared by the following specific steps:
the ITO substrate grown with the Bphen hole blocking layer obtained in step S402 is placed in a vacuum coater at room temperature and at a temperature of 4.5X 10−4And evaporating a silver electrode film with the thickness of 80-120 nm in a Pa high-vacuum environment in a thermal evaporation mode to obtain the Perovskite solar cell with the structure of ITO/PEDOT, PSS/Perovskite-PEDOT, PSS/PCBM/Bphen/Ag, wherein the Perovskite is doped with the PEDOT, PSS.
The invention has the following beneficial effects:
1. the invention prepares a battery device by a solution spin coating method, and prepares Perovskite solar energy electricity with an inverted structure taking Perovskite-PEDOT: PSS as a Perovskite layer on an ITO substrate which is cleaned and subjected to hydrophilic treatment. After doping of PEDOT and PSS, the morphology of the perovskite layer is improved, and meanwhile, due to the passivation effect of PEDOT and PSS on the defects of the perovskite layer, the charge transmission is effectively promoted, so that the photoelectric property and the photoelectric conversion efficiency of the perovskite solar cell are greatly improved;
2. PSS Perovskite layer, the film crystallinity is good, other miscellaneous peaks except the Perovskite characteristic peak do not appear (as shown in figure 1);
3. the Perovskite-PEDOT is a PSS Perovskite layer, has good appearance, large grain size, compact arrangement and smooth surface, and has no obvious holes and pinholes (as shown in figure 2);
4. the Perovskite solar cell prepared by taking Perovskite-PEDOT: PSS as the Perovskite layer has better photoelectric property and photoelectric conversion efficiency (as shown in figure 3).
Drawings
FIG. 1 is an XRD pattern of Perovskite-PEDOT: PSS Perovskite layer.
FIG. 2 is an SEM image of Perovskite-PEDOT PSS Perovskite layer.
FIG. 3 is a Perovskite-PEDOT PSS Perovskite solar cellJ-VFigure (a).
Detailed Description
The present invention is described in further detail below with reference to examples, but it should not be construed that the scope of the above subject matter of the present invention is limited to the following examples, and that all the technologies realized based on the above subject matter of the present invention belong to the scope of the present invention.
Example 1
Step S100: PSS hole transport layer, the concrete steps are:
step S101: placing cleaned and hydrophilized ITO glass on a spin coater, uniformly coating PEDOT, namely PSS aqueous solution on the ITO glass, and performing spin coating to obtain a precursor film of a PSS hole transport layer, wherein the spin coating speed is 3500 rpm, and the spin coating time is 40 seconds;
step S102: placing the ITO substrate of the spin-coating precursor film processed in the step S101 on a heating table, and continuously annealing for 20 minutes at 130 ℃ in an air environment to obtain a PEDOT (PSS) hole transport layer with uniform thickness;
step S200: the preparation method of the Perovskite-PEDOT PSS Perovskite layer comprises the following specific steps:
step S201: dissolving PEDOT, PSS aqueous solution and DMF solution mutually to prepare a mixed solvent with the volume percentage of 1.0 percent;
step S202: mixing PbCl2And CH3NH3I, uniformly mixing the components according to a molar ratio of 1:3 to obtain mixed powder, placing the mixed powder into the mixed solvent prepared in the step S201, placing the mixed solvent on a heating table in a glove box, and heating the mixed solvent in the glove boxHeating and stirring at 70 ℃ in nitrogen atmosphere to dissolve to obtain a mixed solution;
step S203: filtering the mixed solution obtained in the step S202 by using a polytetrafluoroethylene filter with the specification of 0.45 mu m to obtain a yellow and clear Perovskite-PEDOT, PSS Perovskite layer precursor solution;
step S204: placing the ITO substrate with the PEDOT, PSS hole transport layer, which is obtained in the step S102, on a spin coater in a glove box, uniformly coating the Perovskite-PEDOT, PSS Perovskite layer precursor solution obtained in the step S203, on the PEDOT, PSS hole transport layer, and performing spin coating to obtain the Perovskite-PEDOT, wherein the spin coating speed is 3000 r/min, and the spin coating time is 40 seconds;
step S205: placing the ITO substrate which is processed in the step S204 and is coated with the precursor film in a heating table in a glove box, annealing the ITO substrate from 30 ℃ to 110 ℃ in a gradient manner at the heating rate of 10 ℃/10 minutes, and continuously annealing the ITO substrate at the constant temperature of 110 ℃ for 1.5 hours to obtain a brownish black Perovskite-PEDOT, namely a PSS Perovskite layer;
step S300: the preparation method of the PCBM electronic transmission layer comprises the following specific steps:
step S301: placing 15mg of dark brown powder PCBM in chlorobenzene in a glove box, placing the chlorobenzene on a heating table, heating and stirring the mixture at 60 ℃ in a nitrogen environment to dissolve the PCBM, and finally obtaining a PCBM electron transport layer precursor solution with the concentration of 20 mg/mL;
step S302: placing the ITO substrate with the grown Perovskite-PEDOT, PSS Perovskite layer, obtained in the step S205 on a spin coater in a glove box, uniformly coating the PCBM electronic transmission layer precursor solution prepared in the step S301 on the Perovskite-PEDOT, PSS Perovskite layer, and performing spin coating to obtain a precursor film of the PCBM electronic transmission layer, wherein the spin coating speed is 3000 r/min, and the spin coating time is 40 seconds;
step S303: placing the ITO substrate which is processed in the step S302 and is coated with the precursor film in a spin mode on a heating table of a glove box, and annealing for 20 minutes at 60 ℃ in a nitrogen environment to obtain a PCBM electronic transmission layer;
step S400: the method for preparing the Bphen hole blocking layer comprises the following specific steps:
step S401: placing 5mg of powder Bphen in newly-unsealed absolute ethyl alcohol in air, then placing the powder Bphen on a heating table of a glove box, and heating, stirring and dissolving the powder Bphen in a nitrogen environment to obtain a Bphen hole blocking layer precursor solution with the concentration of 0.5 mg/mL;
step S402: placing the ITO substrate with the PCBM electron transport layer grown, obtained in the step S303, on a spin coater in a glove box, uniformly coating the PCBM electron transport layer with the Bphen hole barrier layer precursor solution prepared in the step S401, and then performing spin coating to obtain a Bphen hole barrier layer, wherein the spin coating speed is 4000 revolutions per minute, and the spin coating time is 40 seconds;
step S500: the Ag electrode is prepared by the following specific steps:
the ITO substrate grown with the Bphen hole blocking layer obtained in step S402 is placed in a vacuum coater at room temperature and at a temperature of 4.5X 10−4And evaporating a silver electrode film with the thickness of 80nm in a Pa high-vacuum environment in a thermal evaporation mode to obtain the Perovskite solar cell with the structure of ITO/PEDOT, PSS/Perovskite-PEDOT, PSS/PCBM/Bphen/Ag, wherein the Perovskite is doped with the PEDOT, PSS.
FIG. 1 is XRD data for Perovskite-PEDOT PSS Perovskite layer prepared in this example, which shows that the sample crystallizes well and no other miscellaneous peaks except for the Perovskite characteristic peak are present.
Example 2
Step S100: PSS hole transport layer, the concrete steps are:
step S101: placing cleaned and hydrophilized ITO glass on a spin coater, uniformly coating PEDOT, namely PSS aqueous solution on the ITO glass, and performing spin coating to obtain a precursor film of a PSS hole transport layer, wherein the spin coating speed is 3000 r/min, and the spin coating time is 30 seconds;
step S102: placing the ITO substrate of the spin-coating precursor film processed in the step S101 on a heating table, and continuously annealing for 15 minutes at 130 ℃ in an air environment to obtain a PEDOT (PSS) hole transport layer with uniform thickness;
step S200: the preparation method of the Perovskite-PEDOT PSS Perovskite layer comprises the following specific steps:
step S201: dissolving PEDOT, PSS aqueous solution and DMF solution mutually to prepare a mixed solvent with the volume percentage of 1.5 percent;
step S202: mixing PbCl2And CH3NH3I, uniformly mixing the raw materials according to a molar ratio of 1:3 to obtain mixed powder, placing the mixed powder into the mixed solvent prepared in the step S201, placing the mixed powder on a heating table in a glove box, and heating, stirring and dissolving the mixed powder at 60 ℃ in a nitrogen atmosphere to obtain a mixed solution;
step S203: filtering the mixed solution obtained in the step S202 by using a polytetrafluoroethylene filter with the specification of 0.45 mu m to obtain a yellow and clear Perovskite-PEDOT, PSS Perovskite layer precursor solution;
step S204: placing the ITO substrate with the PEDOT, PSS hole transport layer, which is obtained in the step S102, on a spin coater in a glove box, uniformly coating the Perovskite-PEDOT, PSS Perovskite layer precursor solution obtained in the step S203, on the PEDOT, PSS hole transport layer, and performing spin coating to obtain the Perovskite-PEDOT, wherein the spin coating speed is 4000 revolutions per minute, and the spin coating time is 40 seconds;
step S205: placing the ITO substrate which is processed in the step S204 and is coated with the precursor film in a heating table in a glove box, annealing the ITO substrate from 30 ℃ to 100 ℃ in a gradient manner at the heating rate of 10 ℃/10 minutes, and continuously annealing the ITO substrate at the constant temperature of 100 ℃ for 1.5 hours to obtain a brownish black Perovskite-PEDOT, namely a PSS Perovskite layer;
step S300: the preparation method of the PCBM electronic transmission layer comprises the following specific steps:
step S301: placing 20mg of dark brown powder PCBM in chlorobenzene in a glove box, placing the chlorobenzene on a heating table, heating and stirring the mixture at 60 ℃ in a nitrogen environment to dissolve the PCBM, and finally obtaining a PCBM electron transport layer precursor solution with the concentration of 20 mg/mL;
step S302: placing the ITO substrate with the grown Perovskite-PEDOT, PSS Perovskite layer, obtained in the step S205 on a spin coater in a glove box, uniformly coating the PCBM electronic transmission layer precursor solution prepared in the step S301 on the Perovskite-PEDOT, PSS Perovskite layer, and performing spin coating to obtain a precursor film of the PCBM electronic transmission layer, wherein the spin coating speed is 2000 rpm, and the spin coating time is 40 seconds;
step S303: placing the ITO substrate which is processed in the step S302 and is coated with the precursor film in a spin mode on a heating table of a glove box, and annealing for 20 minutes at 60 ℃ in a nitrogen environment to obtain a PCBM electronic transmission layer;
step S400: the method for preparing the Bphen hole blocking layer comprises the following specific steps:
step S401: placing 7mg of powder Bphen in newly-unsealed absolute ethyl alcohol in air, then placing the powder Bphen on a heating table of a glove box, and heating, stirring and dissolving the powder Bphen in a nitrogen environment to obtain a Bphen hole blocking layer precursor solution with the concentration of 0.7 mg/mL;
step S402: placing the ITO substrate with the PCBM electron transport layer grown, obtained in the step S303, on a spin coater in a glove box, uniformly coating the PCBM electron transport layer with the Bphen hole barrier layer precursor solution prepared in the step S401, and then performing spin coating to obtain a Bphen hole barrier layer, wherein the spin coating speed is 4000 revolutions per minute, and the spin coating time is 40 seconds;
step S500: the Ag electrode is prepared by the following specific steps:
the ITO substrate grown with the Bphen hole blocking layer obtained in step S402 is placed in a vacuum coater at room temperature and at a temperature of 4.5X 10−4And evaporating a silver electrode film with the thickness of 80nm in a Pa high-vacuum environment in a thermal evaporation mode to obtain the Perovskite solar cell with the structure of ITO/PEDOT, PSS/Perovskite-PEDOT, PSS/PCBM/Bphen/Ag, wherein the Perovskite is doped with the PEDOT, PSS.
FIG. 2 is an SEM image of the surface of the film of Perovskite-PEDOT PSS Perovskite layer prepared in this example, which shows that the sample has large grain size, dense arrangement and smooth surface.
Example 3
Step S100: PSS hole transport layer, the concrete steps are:
step S101: placing cleaned and hydrophilized ITO glass on a spin coater, uniformly coating PEDOT, namely PSS aqueous solution on the ITO glass, and performing spin coating to obtain a precursor film of a PSS hole transport layer, wherein the spin coating speed is 2500 rpm, and the spin coating time is 30 seconds;
step S102: placing the ITO substrate of the spin-coating precursor film processed in the step S101 on a heating table, and continuously annealing for 15 minutes at 130 ℃ in an air environment to obtain a PEDOT (PSS) hole transport layer with uniform thickness;
step S200: the preparation method of the Perovskite-PEDOT PSS Perovskite layer comprises the following specific steps:
step S201: dissolving PEDOT, PSS aqueous solution and DMF solution mutually to prepare a mixed solvent with the volume percentage of 1.5 percent;
step S202: mixing PbCl2And CH3NH3I, uniformly mixing the raw materials according to a molar ratio of 1:3 to obtain mixed powder, placing the mixed powder into the mixed solvent prepared in the step S201, placing the mixed powder on a heating table in a glove box, and heating, stirring and dissolving the mixed powder at 60 ℃ in a nitrogen atmosphere to obtain a mixed solution;
step S203: filtering the mixed solution obtained in the step S202 by using a polytetrafluoroethylene filter with the specification of 0.45 mu m to obtain a yellow and clear Perovskite-PEDOT, PSS Perovskite layer precursor solution;
step S204: placing the ITO substrate with the PEDOT, PSS hole transport layer, which is obtained in the step S102, on a spin coater in a glove box, uniformly coating the Perovskite-PEDOT, PSS Perovskite layer precursor solution obtained in the step S203, on the PEDOT, PSS hole transport layer, and performing spin coating to obtain the Perovskite-PEDOT, wherein the spin coating speed is 5000 r/min, and the spin coating time is 50 seconds;
step S205: placing the ITO substrate which is processed in the step S204 and is coated with the precursor film in a heating table in a glove box, annealing the ITO substrate from 30 ℃ to 100 ℃ in a gradient manner at the heating rate of 10 ℃/10 minutes, and continuously annealing the ITO substrate at the constant temperature of 100 ℃ for 1.5 hours to obtain a brownish black Perovskite-PEDOT, namely a PSS Perovskite layer;
step S300: the preparation method of the PCBM electronic transmission layer comprises the following specific steps:
step S301: placing 20mg of dark brown powder PCBM in chlorobenzene in a glove box, placing the chlorobenzene on a heating table, heating and stirring the mixture at 60 ℃ in a nitrogen environment to dissolve the PCBM, and finally obtaining a PCBM electron transport layer precursor solution with the concentration of 20 mg/mL;
step S302: placing the ITO substrate with the grown Perovskite-PEDOT, PSS Perovskite layer, obtained in the step S205 on a spin coater in a glove box, uniformly coating the PCBM electronic transmission layer precursor solution prepared in the step S301 on the Perovskite-PEDOT, PSS Perovskite layer, and performing spin coating to obtain a precursor film of the PCBM electronic transmission layer, wherein the spin coating speed is 2000 rpm, and the spin coating time is 40 seconds;
step S303: placing the ITO substrate which is processed in the step S302 and is coated with the precursor film in a spin mode on a heating table of a glove box, and annealing for 20 minutes at 60 ℃ in a nitrogen environment to obtain a PCBM electronic transmission layer;
step S400: the method for preparing the Bphen hole blocking layer comprises the following specific steps:
step S401: placing 7mg of powder Bphen in newly-unsealed absolute ethyl alcohol in air, then placing the powder Bphen on a heating table of a glove box, and heating, stirring and dissolving the powder Bphen in a nitrogen environment to obtain a Bphen hole blocking layer precursor solution with the concentration of 0.7 mg/mL;
step S402: placing the ITO substrate with the PCBM electron transport layer grown, obtained in the step S303, on a spin coater in a glove box, uniformly coating the PCBM electron transport layer with the Bphen hole barrier layer precursor solution prepared in the step S401, and then performing spin coating to obtain a Bphen hole barrier layer, wherein the spin coating speed is 4000 revolutions per minute, and the spin coating time is 40 seconds;
step S500: the Ag electrode is prepared by the following specific steps:
the ITO substrate grown with the Bphen hole blocking layer obtained in step S402 is placed in a vacuum coater at room temperature and at a temperature of 4.5X 10−4And evaporating a silver electrode film with the thickness of 120nm in a Pa high-vacuum environment in a thermal evaporation mode to obtain the Perovskite solar cell with the structure of ITO/PEDOT, PSS/Perovskite-PEDOT, PSS/PCBM/Bphen/Ag, wherein the Perovskite is doped with the PEDOT, PSS.
The Perovskite-PEDOT PSS Perovskite solar cell prepared in the example is placed in a J-V test system for photoelectric property test, and as shown in FIG. 3, the Perovskite solar cell prepared in the example can obtain 17.5% photoelectric conversion efficiency.
The foregoing embodiments illustrate the principles, principal features and advantages of the invention, and it will be understood by those skilled in the art that the invention is not limited to the foregoing embodiments, which are merely illustrative of the principles of the invention, and that various changes and modifications may be made therein without departing from the scope of the principles of the invention.
Claims (1)
1. A preparation method of a Perovskite solar cell doped with PEDOT: PSS in Perovskite is characterized by comprising the following specific steps:
step S100: PSS hole transport layer, the concrete steps are:
step S101: placing cleaned and hydrophilized ITO glass on a spin coater, uniformly coating PEDOT, namely PSS aqueous solution on the ITO glass, and performing spin coating to obtain a precursor film of a PSS hole transport layer, namely PEDOT, wherein the spin coating rotating speed is 2500-3500 rpm, and the spin coating time is 30-40 seconds;
step S102: placing the ITO substrate of the spin-coating precursor film processed in the step S101 on a heating table, and continuously annealing for 15-30 minutes at the temperature lower than 140 ℃ in an air environment to obtain a PEDOT (Poly ethylene styrene) PSS (Poly ethylene styrene) hole transport layer with uniform thickness;
step S200: the preparation method of the Perovskite-PEDOT PSS Perovskite layer comprises the following specific steps:
step S201: dissolving a PSS aqueous solution and a DMF solution of PEDOT into a mixed solvent with the volume percentage of 1.0-2.0%;
step S202: mixing PbCl2And CH3NH3I, uniformly mixing the components according to a molar ratio of 1:3 to obtain mixed powder, putting the mixed powder into the mixed solvent prepared in the step S201, putting the mixed powder on a heating table in a glove box, and heating, stirring and dissolving the mixed powder at a temperature lower than 70 ℃ in a nitrogen atmosphere to obtain a mixed solution;
step S203: filtering the mixed solution obtained in the step S202 by using a polytetrafluoroethylene filter with the specification of 0.45 mu m to obtain a yellow and clear Perovskite-PEDOT, PSS Perovskite layer precursor solution;
step S204: placing the ITO substrate with the PEDOT, PSS hole transport layer, which is obtained in the step S102, on a spin coater in a glove box, uniformly coating the Perovskite-PEDOT, PSS Perovskite layer precursor solution obtained in the step S203, on the PEDOT, PSS hole transport layer, and performing spin coating to obtain the Perovskite-PEDOT, wherein the spin coating speed is 3000-5000 r/min, and the spin coating time is 40-50 seconds;
step S205: placing the ITO substrate which is processed in the step S204 and is coated with the precursor film in a heating table in a glove box, annealing the ITO substrate from 30 ℃ to 100-120 ℃ in a gradient manner at the heating rate of 10 ℃/10 minutes, and continuously annealing the ITO substrate for 1.5 hours at the temperature lower than 120 ℃ to obtain a brownish black Perovskite-PEDOT, namely a PSS Perovskite layer;
step S300: the preparation method of the PCBM electronic transmission layer comprises the following specific steps:
step S301: placing 15-25 mg of dark brown powder PCBM in chlorobenzene in a glove box, placing the chlorobenzene on a heating table, heating and stirring the mixture at the temperature lower than 60 ℃ in a nitrogen environment to dissolve the mixture, and finally obtaining a PCBM electron transport layer precursor solution with the concentration of 20 +/-5 mg/mL;
step S302: placing the ITO substrate with the grown Perovskite-PEDOT, PSS Perovskite layer, obtained in the step S205 on a spin coater in a glove box, uniformly coating the PCBM electronic transmission layer precursor solution prepared in the step S301 on the Perovskite-PEDOT, PSS Perovskite layer, and performing spin coating to obtain a precursor film of the PCBM electronic transmission layer, wherein the spin coating speed is 2000-4000 rpm, and the spin coating time is 40-50 seconds;
step S303: placing the ITO substrate which is processed in the step S302 and is coated with the precursor film in a spin mode on a heating table of a glove box, and annealing for 15-20 minutes at the temperature of 60-80 ℃ in a nitrogen environment to obtain a PCBM electronic transmission layer;
step S400: the method for preparing the Bphen hole blocking layer comprises the following specific steps:
step S401: placing 5-7 mg of Bphen powder in absolute ethyl alcohol in the air, then placing the Bphen powder on a heating table of a glove box, and heating, stirring and dissolving the Bphen powder in a nitrogen environment to obtain a Bphen hole blocking layer precursor solution with the concentration of 0.5-0.7 mg/mL;
step S402: placing the ITO substrate with the PCBM electron transport layer grown, obtained in the step S303, on a spin coater in a glove box, uniformly coating the PCBM electron transport layer with the Bphen hole barrier layer precursor solution prepared in the step S401, and then performing spin coating to obtain a Bphen hole barrier layer, wherein the spin coating rotation speed is 4000-6000 rpm, and the spin coating time is 40-50 seconds;
step S500: the Ag electrode is prepared by the following specific steps:
the ITO substrate grown with the Bphen hole blocking layer obtained in step S402 is placed in a vacuum coater at room temperature and at a temperature of 4.5X 10−4And evaporating a silver electrode film with the thickness of 80-120 nm in a Pa high-vacuum environment in a thermal evaporation mode to obtain the Perovskite solar cell with the structure of ITO/PEDOT, PSS/Perovskite-PEDOT, PSS/PCBM/Bphen/Ag, wherein the Perovskite is doped with the PEDOT, PSS.
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