CN112234144B - Preparation method of perovskite microcrystalline film and solar cell device - Google Patents
Preparation method of perovskite microcrystalline film and solar cell device Download PDFInfo
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- CN112234144B CN112234144B CN201910634687.7A CN201910634687A CN112234144B CN 112234144 B CN112234144 B CN 112234144B CN 201910634687 A CN201910634687 A CN 201910634687A CN 112234144 B CN112234144 B CN 112234144B
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Abstract
The invention discloses a preparation method of a perovskite microcrystalline film and a solar cell device. Mixing pre-synthesized perovskite microcrystal with a high-molecular adhesive, an inorganic dispersant and an organic dispersing solvent, and preparing uniform perovskite crystal slurry with good dispersibility by using a ball milling method; the microcrystalline perovskite crystal slurry is pressed on a substrate material by using a preparation method of mechanical stamping, blade coating and printing, annealed to form a film, and the film can be assembled into a solar cell. The method is a brand-new perovskite thin film preparation process, the obtained perovskite microcrystalline film has good film forming property and high repeatability, gets rid of the step of ultraviolet ozone treatment, can be prepared in a large area, and has great development potential and market application prospect.
Description
Technical Field
The invention belongs to the field of perovskite solar cells, and particularly relates to a preparation method of a novel perovskite microcrystalline film and a perovskite solar cell prepared based on the method.
Background
Since the first report of perovskite solar cells in 2009, research on perovskite solar cells is spread worldwide. The highest cell efficiency, which is currently certified by authorities, has broken through 24%, which value has exceeded the highest efficiency of current commercial polycrystalline silicon solar cells for many years and is close to the efficiency of monocrystalline silicon cells. Compared with polycrystalline silicon and monocrystalline silicon solar cells, the perovskite cell has the advantages of low cost of materials, simple process, low equipment requirement, low cell cost and the like. These advantages illustrate the potential for the development of perovskite solar cells to replace high cost polycrystalline silicon and single crystalline silicon solar cells.
In a perovskite solar cell device structure, the perovskite material active layer is the core of the whole cell. The film forming quality of the perovskite layer is a key factor influencing the solar cell device, and the film forming quality of the perovskite film is closely related to the film forming process. Therefore, with the continuous breakthrough of efficiency of perovskite solar cells, research on the preparation process of perovskite thin films is also actively carried out. Currently, solution processing techniques are the mainstream of current perovskite film formation techniques. The method is characterized in that a precursor solution of the perovskite material is prepared at first, the perovskite material is prepared by means of spin coating and annealing, and the method mainly comprises a one-step method, a two-step method and a preparation process for improving or fine-tuning on the basis of the two methods. The method has the advantages of flexibility, changeability, high controllability, low equipment requirement, low cost and the like. However, since the spin coating technique is to uniformly coat the precursor solution on the substrate by using the centrifugal action generated when the rotor rotates at a high speed to form a film, the quality of the film is often related to the wettability of the substrate by the precursor solution, and if the wettability is poor, the entire perovskite film may exhibit a large number of voids, thereby degrading the performance of the battery. Therefore, in order to improve the coating properties of the precursor solution, the substrate needs to be treated with ultraviolet ozone several times in advance to improve the wettability of the perovskite precursor solution. This link undoubtedly increases the complexity of perovskite cell fabrication and the degree of dependence on equipment. In addition, the spin coating film-making method has a strict requirement on the area of the substrate, and the size of the cell substrate prepared by the spin coating method is often very small, so that the preparation of the perovskite solar cell can only be carried out in a laboratory. The above disadvantages are not favorable for marketable popularization of perovskite solar energy.
The crystal size of the perovskite thin film also has an important influence on the performance of the battery. Nowadays, increasing the grain size of perovskite polycrystalline film has become one of the research hotspots of the current perovskite solar cell. If no additive or special additional process is used, the perovskite polycrystalline film prepared by the conventional spin-coating method is composed of a large number of nano-scale small crushed crystals, a large number of boundaries exist among the crystals, and a large number of defects exist in the crystal boundaries, so that the transmission resistance of photoelectrons has to be generated by crossing a large number of 'boundaries', and electron traps in the crystal boundaries can capture photogenerated carriers, thereby limiting the performance of the battery. Therefore, this film-forming property is disadvantageous for the optimization of battery performance.
Disclosure of Invention
Aiming at the defects or improvement requirements of the prior art, the invention provides a brand-new perovskite microcrystalline film preparation process and a solar cell preparation method. In order to overcome the problems of dependence on ultraviolet ozone treatment, limited spin coating area, small grain size and the like in the conventional perovskite spin coating step, the invention aims to provide a perovskite thin film and a perovskite battery preparation method which are large in area, low in cost, high in performance, simplified in process and good in commercialization prospect.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a preparation method of a perovskite microcrystalline film comprises the following steps: firstly, mixing a proper amount of pre-synthesized perovskite microcrystal with a high-molecular adhesive, an inorganic dispersant and an organic dispersing solvent, and preparing perovskite crystal slurry with uniformity and good dispersibility by using a ball milling method; and pressing and annealing the obtained perovskite crystal slurry on a substrate material to form a film by using a preparation mode of mechanical stamping, blade coating and/or printing. The prepared perovskite microcrystalline film is further assembled into a solar cell.
In the preparation method, the chemical general formula of the perovskite microcrystalline material used is ABX 3 Wherein A is CH 3 NH 3 + (MA + )、NH 2 CH＝NH 2 + (FA + )、C 4 H 9 NH 3 + 、Cs + 、Ru + 、K + One or more of the components are mixed; b is Pb 2+ 、Sn 2+ 、Ge 2+ 、Sb 3+ 、Bi 3+ 、Ag + At least one of; x is Cl - 、Br - 、I - 、(BF 4 ) - 、SCN - 、(PF 6 ) - One or more of them are mixed.
The perovskite microcrystal is synthesized by a conventional method, such as hydrothermal synthesis, solid-phase reaction, anti-solvent diffusion, chemical vapor deposition, physical vapor deposition and the like. In the embodiment of the invention, CH is added 3 NH 3 I and PbI 2 Preparing a precursor solution (with the concentration of 2M) according to the mol ratio of 1 3 NH 3 PbI 3 Perovskite crystallites. Among them, the high temperature is preferably 80 to 100 ℃.
The perovskite microcrystal comprises perovskite monocrystal or polycrystal mixture, and the grain size distribution of the crystal is 500nm-1000 mu m. Preferably, CH 3 NH 3 PbI 3 The particle size of the perovskite microcrystal is 10-30 mu m.
In one embodiment of the present invention, the polymeric binder is one or more selected from the group consisting of poly (3-hexylthiophene), polyaniline, poly (3, 4-ethylenedioxythiophene), poly (styrenesulfonic acid), and polyvinylidene fluoride. Preferably, the polymeric binder used is poly 3-hexylthiophene.
As an embodiment of the present invention, the inorganic dispersant is selected from one or more of silicon dioxide, zirconium dioxide, titanium dioxide, and aluminum oxide. Preferably, the inorganic binder used is alumina with a particle size between 20 and 50 nm.
As an embodiment of the present invention, the organic dispersion solvent used includes chlorobenzene.
As an embodiment of the invention, the ball milling time is 10min-24h, preferably 10min-120min, and the rotating speed is 100-400 r/h.
As one embodiment of the invention, the perovskite microcrystalline film is prepared by one or more of mechanical stamping, blade coating, printing and the like.
As an embodiment of the present invention, the substrate material is ITO, FTO, conductive carbon paper, metal foil, or a flexible substrate composed of polyester, polyphthalamide compound. Preferably, the substrate used is an FTO conductive substrate.
As an embodiment of the invention, the annealing temperature is below 120 ℃, and the thickness of the obtained perovskite microcrystalline film is 500nm-1000 μm, such as 10 μm.
Preferably, the perovskite solar cell device structure is a plane heterojunction type, the core of the perovskite solar cell device structure is that the perovskite layer is the perovskite microcrystalline film prepared by the method, and the specific cell structural formula can be as follows: FTO/TiO 2 perovskite/Spiro-OMeTAD/Au。
In one embodiment of the present invention, the perovskite solar cell is specifically prepared by the following steps: (1) Firstly, the FTO conductive glass is respectively cleaned in water, acetone and ethanol by ultrasonic waves for standby. (2) preparation of a dense layer: diluting the diluted TiO 2 And depositing the precursor solution on the surface of the FTO in a spray pyrolysis manner, and sintering at 150 ℃ to serve as a hole blocking layer. (3) synthesis of perovskite microcrystal: preparing CH with a certain concentration 3 NH 3 PbI 3 The precursor solution is used for culturing a proper amount of perovskite single crystal by using a high-temperature dissolving and cooling crystallization mode. (4) preparation of perovskite layer: mixing the pre-synthesized perovskite microcrystal with poly-3-hexylthiophene, aluminum oxide and chlorobenzene, preparing perovskite crystal slurry with uniform and good dispersibility by using a ball milling method, pressing the perovskite crystal slurry into a film by using a preparation method of mechanical stamping and blade coating, and heating, curing and removing a solvent to form a uniform and compact microcrystalline film. (5) A layer of cyclone-OMeTAD is spin-coated on the perovskite as a hole transport layer, the rotation speed is 5000rpm,30s, and the perovskite is dried and oxidized overnight. (6) preparing a metal back electrode: and performing vacuum evaporation of Au on the hole transport layer to serve as a back electrode.
In another aspect of the invention, the plane heterojunction type perovskite solar cell can be of a trans-structure and a formal structure, and the perovskite layer is prepared by adopting the perovskite microcrystalline film preparation process.
In general, compared with the prior art, the design idea and the technical scheme provided by the invention can achieve the following beneficial effects: (1) The perovskite single crystal prepared in advance is pressed into a film by using a mechanical punching film forming method, so that the problem that the traditional spin coating film forming method cannot be used for large-area preparation is solved, and the commercialization requirement is met. (2) The method overcomes the defects that the traditional perovskite spin coating step depends on ultraviolet ozone treatment, reduces the dependence of the battery on equipment, and reduces energy consumption and preparation cost. (3) The perovskite film formed by the micron-sized single crystals has large grain size, high single crystal purity and small defect density, and the performance of the battery is optimized.
Drawings
FIG. 1 is a schematic diagram of the perovskite cell prepared in example 2 of the invention.
FIG. 2 is a test chart of the photovoltaic performance of perovskite cells prepared in example 2 of the present invention.
Detailed Description
The present invention will be further explained with reference to specific examples, but the present invention is not limited to the following examples.
Example 1
The embodiment provides a method for preparing a perovskite microcrystalline film by a mechanical method, which comprises the following specific preparation steps: adding CH in a molar ratio of 1 3 NH 3 I and PbI 2 CH configured as 1M 3 NH 3 PbI 3 Heating and stirring the precursor solution at 80 ℃ overnight to form saturated precursor solution, then slowly cooling to room temperature, and culturing a proper amount of perovskite single crystal by using a high-temperature dissolving and cooling evaporation solvent crystallization mode. Taking out the crystal for later use. 0.1g of pre-synthesized perovskite microcrystal is mixed with 5mg of poly-3-hexylthiophene, 10mg of aluminum oxide and 500 mu L of chlorobenzene by stirring and ultrasonic treatment for 0.5h respectively, and the mixture is prepared into uniform perovskite single crystal slurry with good dispersibility by using a planetary ball mill, wherein the ball milling time is 1h. And pressing the slurry into a film by using a micro tablet press within the range of 1kpa-1Mpa, heating and curing to remove the solvent, and forming a uniform and compact microcrystalline film.
Example 2
Referring to fig. 1, this example provides a method for mechanically fabricating a perovskite solar cell of a perovskite microcrystalline film.
(1) Firstly, etching the FTO conductive glass by using a chemical etching method, and then ultrasonically cleaning the FTO conductive glass in water, acetone and ethanol for 30min for later use. (2) preparation of a dense layer: diluting the TiO 2 And depositing the precursor solution on the surface of the FTO in a spray pyrolysis mode, sintering at 150 ℃, and taking the precursor solution as a hole blocking layer, wherein the thickness of the film is 200nm. (3) synthesis of perovskite microcrystal: preparing CH with a certain concentration 3 NH 3 PbI 3 The precursor solution is used for culturing a proper amount of perovskite single crystal by using a high-temperature dissolving and cooling crystallization mode. (4) preparation of perovskite layer: mixing the pre-synthesized perovskite microcrystal with poly-3-hexylthiophene, aluminum oxide and chlorobenzene, and preparing the mixture into uniform and separate perovskite microcrystal by using a ball milling methodPerovskite crystal slurry with good dispersity. And pressing the microcrystalline perovskite crystal slurry into a film by using a preparation method of mechanical stamping and blade coating, and heating, curing and removing the solvent to form a uniform and compact microcrystalline film. (5) A layer of cyclone-OMeTAD is spin-coated on the perovskite as a hole transport layer, the concentration is 80mg/mL, the rotating speed is 5000rpm,30s, and the perovskite is dried and oxidized overnight. (6) preparing a metal back electrode: and performing vacuum evaporation on the hole transport layer to form Au as a back electrode, thereby completing the manufacture of the cell.
The resulting cell performance test is shown in fig. 2. Wherein the battery short-circuit current (J) sc ) Is 21.095mA/cm 2 Open circuit voltage (V) oc ) 1.051V, the fill factor FF is 0.61, and the photoelectric conversion efficiency (eta) is 13.47%.
Claims (7)
1. A preparation method of a perovskite microcrystalline film comprises the following steps:
1) Mixing perovskite microcrystal with high molecular adhesive, inorganic dispersant and organic dispersing solvent, and preparing into uniformly dispersed perovskite microcrystal slurry by ball milling method, wherein the molecular formula of the perovskite microcrystal is CH 3 NH 3 PbI 3 The preparation method comprises the following steps: will CH 3 NH 3 I and PbI 2 Preparing a precursor solution according to a molar ratio of 1; the inorganic dispersant is selected from one or more of silicon dioxide, zirconium dioxide, titanium dioxide and aluminum oxide; the organic dispersion solvent is chlorobenzene;
2) Pressing and annealing the perovskite crystal slurry obtained in the step 1) on a substrate material to form a film by using a mechanical stamping, blade coating and/or printing method.
2. The production method according to claim 1, wherein the perovskite microcrystal is a perovskite monocrystal having a crystal grain size distribution of 500nm to 1000 μm.
3. The preparation method of claim 1, wherein the ball milling time in step 1) is 10min to 24h, and the rotation speed is 100 to 400 r/h.
4. The production method according to claim 1, wherein the annealing temperature in step 2) is 120 ℃ or lower, and the thickness of the perovskite microcrystalline film obtained is 500nm to 1000 μm.
5. The method of claim 1, wherein the substrate material in step 2) is ITO, FTO, conductive carbon paper, metal foil, or a flexible substrate made of polyester, or a polyphthalamide compound.
6. A method for manufacturing a perovskite solar cell, wherein the perovskite microcrystalline film is manufactured according to the manufacturing method of any one of claims 1 to 5 and assembled into the solar cell.
7. A perovskite solar cell, the device structure of which is a plane heterojunction type, wherein a perovskite layer is the perovskite microcrystalline film obtained by the preparation method according to any one of claims 1 to 5.
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Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106854749A (en) * | 2016-12-02 | 2017-06-16 | 广州光鼎科技有限公司 | A kind of preparation method of perovskite material and its associated film |
| CN107046098A (en) * | 2017-03-30 | 2017-08-15 | 南京理工大学 | A kind of preparation method of big crystal grain iodide perovskite thin film |
| CN107118376A (en) * | 2017-05-31 | 2017-09-01 | 湖南人文科技学院 | A kind of polyvinyl chloride-based CH3NH3PbX2The preparation method of I laminated films |
| CN107459346A (en) * | 2017-08-11 | 2017-12-12 | 哈尔滨工业大学 | Leadless piezoelectric barium phthalate base textured ceramic of high electric property and its preparation method and application |
| CN107555986A (en) * | 2017-09-04 | 2018-01-09 | 济南大学 | A kind of low-loss salt mine structure microwave-medium ceramics and preparation method |
| CN108026445A (en) * | 2016-08-11 | 2018-05-11 | 凡泰姆股份公司 | Luminescent crystal and its manufacture |
| WO2018123402A1 (en) * | 2016-12-28 | 2018-07-05 | パナソニックＩｐマネジメント株式会社 | Solar cell, light-absorbing layer, and method for forming light-absorbing layer |
| CN108666428A (en) * | 2018-04-04 | 2018-10-16 | 石家庄铁道大学 | A kind of perovskite monocrystalline film solar cell preparation method and device |
| CN108922653A (en) * | 2018-06-30 | 2018-11-30 | 中国科学院上海硅酸盐研究所 | A kind of perovskite carbon pastes used for solar batteries and electrode |
| CN108929112A (en) * | 2018-09-21 | 2018-12-04 | 广东工业大学 | A kind of lead lanthanum zirconate titanate thick film ceramic that mixing tin and its preparation and application |
| CN109336768A (en) * | 2018-09-27 | 2019-02-15 | 深圳大学 | A kind of preparation method of perovskite powder |
| CN109545985A (en) * | 2017-09-22 | 2019-03-29 | 杭州纤纳光电科技有限公司 | It is a kind of improve perovskite at film uniformity devices and methods therefor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090324470A1 (en) * | 2006-06-12 | 2009-12-31 | Nanox Inc. | Process for Optimizing the Catalytic Activity of a Perovskite-Based Catalyst |
-
2019
- 2019-07-15 CN CN201910634687.7A patent/CN112234144B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108026445A (en) * | 2016-08-11 | 2018-05-11 | 凡泰姆股份公司 | Luminescent crystal and its manufacture |
| CN106854749A (en) * | 2016-12-02 | 2017-06-16 | 广州光鼎科技有限公司 | A kind of preparation method of perovskite material and its associated film |
| WO2018123402A1 (en) * | 2016-12-28 | 2018-07-05 | パナソニックＩｐマネジメント株式会社 | Solar cell, light-absorbing layer, and method for forming light-absorbing layer |
| CN107046098A (en) * | 2017-03-30 | 2017-08-15 | 南京理工大学 | A kind of preparation method of big crystal grain iodide perovskite thin film |
| CN107118376A (en) * | 2017-05-31 | 2017-09-01 | 湖南人文科技学院 | A kind of polyvinyl chloride-based CH3NH3PbX2The preparation method of I laminated films |
| CN107459346A (en) * | 2017-08-11 | 2017-12-12 | 哈尔滨工业大学 | Leadless piezoelectric barium phthalate base textured ceramic of high electric property and its preparation method and application |
| CN107555986A (en) * | 2017-09-04 | 2018-01-09 | 济南大学 | A kind of low-loss salt mine structure microwave-medium ceramics and preparation method |
| CN109545985A (en) * | 2017-09-22 | 2019-03-29 | 杭州纤纳光电科技有限公司 | It is a kind of improve perovskite at film uniformity devices and methods therefor |
| CN108666428A (en) * | 2018-04-04 | 2018-10-16 | 石家庄铁道大学 | A kind of perovskite monocrystalline film solar cell preparation method and device |
| CN108922653A (en) * | 2018-06-30 | 2018-11-30 | 中国科学院上海硅酸盐研究所 | A kind of perovskite carbon pastes used for solar batteries and electrode |
| CN108929112A (en) * | 2018-09-21 | 2018-12-04 | 广东工业大学 | A kind of lead lanthanum zirconate titanate thick film ceramic that mixing tin and its preparation and application |
| CN109336768A (en) * | 2018-09-27 | 2019-02-15 | 深圳大学 | A kind of preparation method of perovskite powder |
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