CN220307715U - Perovskite solar cell with double light absorption layer structure - Google Patents
Perovskite solar cell with double light absorption layer structure Download PDFInfo
- Publication number
- CN220307715U CN220307715U CN202321629464.XU CN202321629464U CN220307715U CN 220307715 U CN220307715 U CN 220307715U CN 202321629464 U CN202321629464 U CN 202321629464U CN 220307715 U CN220307715 U CN 220307715U
- Authority
- CN
- China
- Prior art keywords
- perovskite
- light absorption
- layer
- absorption layer
- masni
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000031700 light absorption Effects 0.000 title claims abstract description 46
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000011521 glass Substances 0.000 claims abstract description 18
- 230000005525 hole transport Effects 0.000 claims abstract description 12
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000000862 absorption spectrum Methods 0.000 abstract description 6
- 230000005684 electric field Effects 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract description 5
- 238000010494 dissociation reaction Methods 0.000 abstract description 4
- 230000005593 dissociations Effects 0.000 abstract description 4
- 230000001737 promoting effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 88
- 238000001704 evaporation Methods 0.000 description 14
- 239000002243 precursor Substances 0.000 description 12
- 230000008020 evaporation Effects 0.000 description 10
- 238000004528 spin coating Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012703 sol-gel precursor Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- YSHMQTRICHYLGF-UHFFFAOYSA-N 4-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=NC=C1 YSHMQTRICHYLGF-UHFFFAOYSA-N 0.000 description 2
- 235000017399 Caesalpinia tinctoria Nutrition 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910008449 SnF 2 Inorganic materials 0.000 description 2
- 241000388430 Tara Species 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000012296 anti-solvent Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910003002 lithium salt Inorganic materials 0.000 description 2
- 159000000002 lithium salts Chemical class 0.000 description 2
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 description 2
- QPBYLOWPSRZOFX-UHFFFAOYSA-J tin(iv) iodide Chemical compound I[Sn](I)(I)I QPBYLOWPSRZOFX-UHFFFAOYSA-J 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model provides a perovskite solar cell with a double light absorption layer structure, which is characterized in that FTO conductive glass and TiO are sequentially arranged from bottom to top 2 Electron transport layer, MASNI 3 Perovskite light absorption layer, csGeI 3 Perovskite light absorption layer, spiro-OMeTAD hole transport layer and Ag electrode, the MASNI 3 The perovskite light absorption layer is CH 3 NH 3 SnI 3 Perovskite light absorbing layer. The utility model has a double light absorption layer structure, so that the absorption spectrum of the light absorption layer of the battery is widened to an infrared band, and the double-layer heterojunction structure can promote the internal electric field driving force of the light absorption layer, thereby effectively promoting the dissociation of photogenerated carriers and obviously improving the photoelectric conversion efficiency of the perovskite battery.
Description
[ field of technology ]
The utility model relates to the field of perovskite solar cells, in particular to a perovskite solar cell with a double light absorption layer structure.
[ background Art ]
In recent years, a halide perovskite material attracts great attention of researchers in the photovoltaic field due to its excellent photoelectric properties such as high absorption coefficient, adjustable band gap, high carrier diffusion length, and defect tolerance. The photoelectric conversion efficiency of solar cells using the same as the light-absorbing layer is now over 25%, approaching the theoretical limit of single solar cells. However, there are still many restrictions to further business behind its rapid developmentOne of the problems in industrialization is its toxicity. The light-absorbing layer material used in the current high-efficiency perovskite battery is lead-based perovskite, and heavy metal lead can cause environmental pollution and human body injury, so that the light-absorbing layer material is forbidden by a plurality of countries. In response to this problem, the scientific community has begun to study environmentally friendly lead-free perovskites, with tin and germanium replacing the lead in the B-position being the most widely used method. For example, 2018, chen et al utilized CsGeI 3 Preparation of FTO/TiO 2 /CsGeI 3 Solar cells of the structure/spiro-OMeTAD/Ag have a photoelectric conversion efficiency of only 4.92% (RSC adv.8 (33) (2018)
18396-18399). Therefore, how to improve the efficiency of solar cells based on lead-free perovskite light absorbing layers is currently the key to research such cells. Work around this problem, followed by some device simulations, was reported, e.g. Tara et al studied CsGeI 3 The numerical simulation shows that the battery with ZnOS as an electron transport layer and CuI as a hole transport layer has the highest efficiency, and the battery structure is as follows: FTO/ZnOS/CsGeI 3 CuI/Au (Optical Materials (2022) 112403); zhang et al studied CsGeI without hole transport layer 3 W was found to be the best metal electrode for the cell, the cell structure was: FTO/ZnOS/CsGeI 3 /W(Materials Today Communications 34(2023)105347)。
As can be seen from the above simulation study work, the focus is currently mainly on CsGeI 3 The transport layer and electrode materials of the base perovskite cell are replaced to improve the photoelectric conversion efficiency of the cell, however, the above-mentioned work still encounters great difficulty in practical operation. For example, in Tara et al, the preparation of ZnOS electron transport layer materials requires a complex chemical synthesis process, whereas polar organic solvents that dissolve CuI materials often destroy already grown perovskite films, which undoubtedly affects the final efficiency of the cell in practical experiments. In Zhang et al, electrode tungsten is not stable enough as a transition metal and requires an expensive magnetron sputtering process, which increases the manufacturing cost of the battery. Thus, the transport layer and electrode materials experimentally used in Chen et al work remainBut is currently the most practical option. However, the photoelectric conversion efficiency of the battery is low (4.92%), mainly because of CsGeI 3 The bandgap of this perovskite is 1.6eV, which is not the ideal bandgap for a solar cell light absorbing layer material, resulting in a portion of the light not being absorbed by the material. In addition, the built-in electric field driving force of the single-layer perovskite is not high, and the separation and transmission of photo-generated carriers can be influenced.
[ utility model ]
The utility model aims to solve the technical problem of providing a perovskite solar cell with a double light absorption layer structure, wherein the double light absorption layer structure of the perovskite solar cell widens the absorption spectrum of a light absorption layer to an infrared band, and the double heterojunction structure can promote the internal electric field driving force of the light absorption layer, so that the dissociation of photo-generated carriers is effectively promoted, and the photoelectric conversion efficiency of the perovskite solar cell is obviously improved.
The utility model is realized in the following way:
perovskite solar cell based on double-deck leadless light-absorbing layer structure, perovskite solar cell's structure is from bottom to top set gradually FTO conductive glass, tiO 2 Electron transport layer, MASNI 3 Perovskite light absorption layer, csGeI 3 Perovskite light absorption layer, spiro-OMeTAD hole transport layer and Ag electrode, the MASNI 3 The perovskite light absorption layer is CH 3 NH 3 SnI 3 Perovskite light absorbing layer.
Further, the thickness of the FTO conductive glass is 300nm-500nm, and the TiO 2 The thickness of the electron transport layer is 10nm-50nm, and the MASNI 3 The thickness of the perovskite layer is 100nm-300nm, and the CsGeI 3 The thickness of the perovskite light absorption layer is 400nm-1000nm, the thickness of the Spiro-OMeTAD hole transport layer is 100nm-300nm, and the thickness of the Ag electrode is 60nm-120nm.
The utility model has the following advantages:
the utility model is realized by the method that the catalyst is prepared by the method of preparing the catalyst in TiO 2 Electron transport layer and CsGeI 3 Adding another MASNI layer between light absorption layers 3 (CH 3 NH 3 SnI 3 ) Light-absorbing layer to build double-layer leadless perovskite heterojunction light-absorbingLayer structure, it has solved following two technical problems: 1) Due to MAsnI 3 The smaller band gap (1.3 eV) can further broaden the absorption spectrum of the light absorbing layer to the infrared band. 2) The double-layer heterojunction structure can promote the internal electric field driving force of the light absorption layer, so that the dissociation of photo-generated carriers is effectively promoted. Therefore, the utility model significantly improves the CsGeI-based technology 3 Photoelectric conversion efficiency of perovskite cells of light absorbing layers. Simultaneous MAsnI 3 The film is easy to prepare by a low-temperature solution method, and the manufacturing cost of the battery is not increased.
[ description of the drawings ]
The utility model will be further described with reference to examples of embodiments with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a perovskite solar cell based on a double-layer lead-free light absorption layer structure.
Fig. 2 is a graph of external quantum efficiency versus that of perovskite solar cell and comparative example cells of the utility model.
Fig. 3 is a graph showing cell efficiency versus electrical simulation of perovskite solar cell and comparative example cells according to an embodiment of the utility model.
[ detailed description ] of the utility model
Referring to FIG. 1, the utility model relates to a perovskite solar cell based on a double-layer lead-free light absorption layer structure, wherein the perovskite solar cell has the structure of FTO/TiO 2 /MASnI 3 /CsGeI 3 The conductive glass of FTO 1 and TiO are arranged in sequence from bottom to top 2 Electron transport layer 2, MAsn I 3 Perovskite light absorption layer 3, csGeI 3 Perovskite light absorption layer 4, spiro-OMeTAD hole transport layer 5 and Ag electrode 6, the MASNI 3 The perovskite light absorption layer 3 is CH 3 NH 3 SnI 3 Perovskite light absorbing layer.
The thickness of the FTO conductive glass 1 is 300nm-500nm, and the TiO is 2 The thickness of the electron transport layer 2 is 10nm-50nm, and the MAsnI 3 The thickness of the perovskite layer 3 is 100nm-300nm, and the CsGeI 3 The thickness of the perovskite light absorption layer 4 is 400nm-1000nm, and the thickness of the Spiro-OMeTAD hole transport layer 5 is 100nm-300And the thickness of the Ag electrode 6 is 60nm-120nm.
The preparation method comprises the following steps:
1) Firstly, ultrasonically oscillating and cleaning FTO of a glass substrate by adopting glass cleaning agent, deionized water, acetone and alcohol for 10-15 minutes respectively, and then placing FTO conductive glass 1 into O 2 Treating in a plasma cleaner for 15-30 minutes;
2) After the FTO conductive glass 1 is cleaned, the prepared TiO 2 Spin-coating the sol-gel precursor solution on the FTO conductive glass substrate at a speed of 4000rpm/s for 30s; then annealing for 30min at 500 ℃ on a heating plate to obtain TiO 2 An electron transport layer 2;
3) Will be configured with MASNI 3 The precursor solution was spin-coated onto TiO at 4000rpm/s 2 Spin-coating the electron transport layer film for 30s; 300. Mu.L of toluene antisolvent was added dropwise 10s before the end of spin coating to accelerate MAsnI 3 After which the substrate is heated on a heating plate at 100℃for 5min to give MAsnI 3 The perovskite light absorption layer 3 grows well;
4) FTO/TiO 2 /MASnI 3 The substrate is put into a vacuum cavity to be evaporated to prepare a second perovskite light absorption layer to prepare CsGeI 3 Perovskite light absorbing layer: the pressure of the vacuum chamber is kept at 10 -6 mbar, evaporation source GeI 2 And CsI, wherein GeI 2 The evaporation rate of the evaporation source is kept atThe temperature is controlled at 270 ℃; the rate of the CsI evaporation source is kept at +.>The temperature is controlled at 70 ℃;
5) Spin-coating the prepared Spiro-OMeTAD precursor solution on CsGeI at a speed of 3000rpm/s 3 Spin-coating the perovskite light absorption layer for 30s to obtain a Spiro-OMeTAD hole transport layer 5;
6) FTO/TiO 2 /MASnI 3 /CsGeI 3 Placing the Spiro-OMeTAD substrate into vacuum chamber, evaporating Ag electrode 6, and maintaining pressure at 10 -4 mbar, evaporation rate protectionHeld atEvaporating to 60-120 nm.
The precursor solutions in the preparation method are configured as follows:
TiO 2 configuration of sol-gel precursor solution: 1.0g of diethanolamine is dissolved in 71mL of isopropanol solution, 2.7mL of isopropyl titanate is added into the dissolved solution, and the solution is magnetically stirred for 5min at room temperature; 70. Mu.L of deionized water was then added dropwise thereto, and the mixture was left for 1 hour.
MASnI 3 Precursor solution configuration: methyl ammonium iodide MAI and tin iodide SnI 2 Tin fluoride SnF 2 Dissolved in dimethyl sulfoxide solvent, the molar ratio of the three precursors is 1.0:0.8:0.2; the solution is fully stirred and dissolved for use.
Configuration of the Spiro-OMeTAD precursor solution: 72.3mg of Spiro-OMeTAD was dissolved in chlorobenzene solvent, and 18. Mu.L of an acetonitrile solution of lithium salt having a concentration of 520mg/mL and 29. Mu.L of 4-t-butylpyridine were added thereto, and the mixture was used after sufficient dissolution.
The technical solutions of the present utility model will be clearly and completely described below with reference to fig. 1 to 3 and the detailed description. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model. The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
Examples
1. Preparation of perovskite solar cell with double light absorption layer structure:
1. each precursor solution configuration:
TiO 2 configuration of sol-gel precursor solution: 1.0g of diethanolamine is dissolved in 71mL of isopropanol solution, 2.7mL of isopropyl titanate is added into the dissolved solution, and the solution is magnetically stirred for 5min at room temperature; then 70 mu L of deionized water is added dropwiseWater was used after 1 hour of standing.
MASnI 3 Precursor solution configuration: methyl ammonium iodide MAI and tin iodide SnI 2 Tin fluoride SnF 2 Dissolved in dimethyl sulfoxide solvent, the molar ratio of the three precursors is 1.0:0.8:0.2; the solution is fully stirred and dissolved for use.
Configuration of the Spiro-OMeTAD precursor solution: 72.3mg of Spiro-OMeTAD was dissolved in chlorobenzene solvent, and 18. Mu.L of an acetonitrile solution of lithium salt having a concentration of 520mg/mL and 29. Mu.L of 4-t-butylpyridine were added thereto, and the mixture was used after sufficient dissolution.
2. The following steps are then carried out:
1) Firstly, ultrasonically oscillating and cleaning FTO of a glass substrate by adopting glass cleaning agent, deionized water, acetone and alcohol for 15 minutes respectively, and then placing FTO conductive glass into O 2 Treating in a plasma cleaner for 30 minutes;
2) After the FTO conductive glass is cleaned, the prepared TiO 2 Spin-coating the sol-gel precursor solution on the FTO conductive glass substrate at a speed of 4000rpm/s for 30s; then annealing for 30min at 500 ℃ on a heating plate to obtain TiO 2 An electron transport layer;
3) Will be configured with MASNI 3 The precursor solution was spin-coated onto TiO at 4000rpm/s 2 Spin-coating the electron transport layer film for 30s; 300. Mu.L of toluene antisolvent was added dropwise 10s before the end of spin coating to accelerate MAsnI 3 After which the substrate is heated on a heating plate at 100℃for 5min to give MAsnI 3 The perovskite light absorption layer grows well;
4) FTO/TiO 2 /MASnI 3 The substrate is put into a vacuum cavity to be evaporated to prepare a second perovskite light absorption layer to prepare CsGeI 3 Perovskite light absorbing layer: the pressure of the vacuum chamber is kept at 10 -6 mbar, evaporation source GeI 2 And CsI, wherein GeI 2 The evaporation rate of the evaporation source is kept atThe temperature is controlled at 270 ℃; the rate of the CsI evaporation source is kept at +.>The temperature is controlled at 70 ℃;
5) Spin-coating the prepared Spiro-OMeTAD precursor solution on CsGeI at a speed of 3000rpm/s 3 Spin-coating the perovskite light absorption layer for 30s to obtain a Spiro-OMeTAD hole transport layer;
6) FTO/TiO 2 /MASnI 3 /CsGeI 3 Placing the Spiro-OMeTAD substrate into vacuum chamber, evaporating Ag electrode, and maintaining pressure at 10 -4 mbar, evaporation rate is maintained atEvaporating to 60-120 nm.
3. The structure of the prepared perovskite solar cell is FTO/TiO 2 /MASnI 3 /CsGeI 3 The thickness of each layer of the alloy is as follows: the thickness of the FTO conductive glass is 500nm, the Ti O 2 The thickness of the electron transport layer is 30nm, and the MASNI 3 The thickness of the perovskite layer is 150nm, and the CsGeI 3 The thickness of the perovskite light absorption layer is 400nm, the thickness of the Spiro-OMeTAD hole transport layer is 200nm, and the thickness of the Ag electrode is 90nm.
2. Performance testing
The following is an FTO/TiO prepared in accordance with an embodiment of the present utility model 2 /MASnI 3 /CsGeI 3 A/Spiro-OMeT AD/Ag perovskite solar cell, and FTO/TiO prepared by comparative example (RSC adv.8 (33) (2018) 18396-18399) 2 /CsGeI 3 Performance comparison of solar cells of the/spiro-ome tad/Ag structure:
referring to fig. 2, fig. 2 shows a perovskite solar cell (masnl) according to an embodiment of the utility model 3 /CsGeI 3 ) And comparative example battery (CsGeI) 3 ) From FIG. 2, it can be seen that the present utility model is applied to TiO by taking the External Quantum Efficiency (EQE) of 2 And CsGeI 3 Between which MASNI is added 3 After the double perovskite light absorption layer is constructed, the absorption spectrum of the light absorption layer is widened. As can be seen, the inventive addition of MASinI compared to the inventive examples and comparative examples 3 Construction of double perovskite light absorbing layer due to MAsnI 3 The smaller band gap (1.3 eV) can further widen the absorptionThe absorption spectrum of the optical layer reaches the infrared band.
Referring to FIG. 3, FIG. 3 is an electrical simulation result showing the efficiency of a perovskite battery, and FIG. 3 shows such MASinI according to an embodiment of the present utility model 3 /CsGeI 3 The double perovskite heterojunction light absorption layer structure promotes internal electric field driving force so that the I-V characteristic of the perovskite battery is obviously improved, and the simulation calculation is based on MASNI in the embodiment of the utility model 3 /CsGeI 3 The photoelectric conversion efficiency of the solar cell with the double perovskite light absorption layers reaches 10.88 percent, and the solar cell is based on a single-layer CsGeI of a comparative example 3 The cell efficiency of the perovskite light absorbing layer (4.92%) was more than 2 times.
In conclusion, the utility model is realized by the method that the catalyst is prepared by the following steps of 2 Electron transport layer and CsGeI 3 Adding another MASNI layer between light absorption layers 3 (CH 3 NH 3 SnI 3 ) The light absorption layer is used for constructing a double-layer leadless perovskite heterojunction light absorption layer structure, and the following two technical problems are solved: 1) Due to MAsnI 3 The smaller band gap (1.3 eV) can further broaden the absorption spectrum of the light absorbing layer to the infrared band. 2) The double-layer heterojunction structure can promote the internal electric field driving force of the light absorption layer, so that the dissociation of photo-generated carriers is effectively promoted. Therefore, the utility model significantly improves the CsGeI-based technology 3 Photoelectric conversion efficiency of perovskite cells of light absorbing layers. Simultaneous MAsnI 3 The film is easy to prepare by a low-temperature solution method, and the manufacturing cost of the battery is not increased.
While specific embodiments of the utility model have been described above, it will be appreciated by those skilled in the art that the specific embodiments described are illustrative only and not intended to limit the scope of the utility model, and that equivalent modifications and variations of the utility model in light of the spirit of the utility model will be covered by the claims of the present utility model.
Claims (2)
1. A perovskite solar cell having a double light absorbing layer structure, characterized by: the perovskite solar cell has the structure thatThe FTO conductive glass and the TiO are sequentially arranged from bottom to top 2 Electron transport layer, MASNI 3 Perovskite light absorption layer, csGeI 3 Perovskite light absorption layer, spiro-OMeTAD hole transport layer and Ag electrode, the MASNI 3 The perovskite light absorption layer is CH 3 NH 3 SnI 3 Perovskite light absorbing layer.
2. A perovskite solar cell having a double light absorbing layer structure as claimed in claim 1, wherein: the thickness of the FTO conductive glass is 300nm-500nm, and the TiO 2 The thickness of the electron transport layer is 10nm-50nm, and the MASNI 3 The thickness of the perovskite layer is 100nm-300nm, and the CsGeI 3 The thickness of the perovskite light absorption layer is 400nm-1000nm, the thickness of the Spiro-OMeTAD hole transport layer is 100nm-300nm, and the thickness of the Ag electrode is 60nm-120nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321629464.XU CN220307715U (en) | 2023-06-26 | 2023-06-26 | Perovskite solar cell with double light absorption layer structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321629464.XU CN220307715U (en) | 2023-06-26 | 2023-06-26 | Perovskite solar cell with double light absorption layer structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220307715U true CN220307715U (en) | 2024-01-05 |
Family
ID=89353929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321629464.XU Active CN220307715U (en) | 2023-06-26 | 2023-06-26 | Perovskite solar cell with double light absorption layer structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220307715U (en) |
-
2023
- 2023-06-26 CN CN202321629464.XU patent/CN220307715U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109904318B (en) | Perovskite thin film preparation method based on anti-solution bath and solar cell | |
| CN112802965B (en) | Interface modification-based perovskite solar cell preparation method | |
| CN105789444A (en) | Perovskite solar cell based on vacuum evaporation coating method and preparation method of perovskite solar cell | |
| CN111525038B (en) | Perovskite solar cell doped with multifunctional additive and preparation method thereof | |
| CN109728169B (en) | Perovskite solar cell doped with functional additive and preparation method thereof | |
| CN108922971B (en) | Process for rapidly improving performance of perovskite solar cell based on organic hole transport layer | |
| CN112234144B (en) | Preparation method of perovskite microcrystalline film and solar cell device | |
| CN110335945B (en) | Double-electron-transport-layer inorganic perovskite solar cell and manufacturing method and application thereof | |
| CN112542549B (en) | Wide-bandgap perovskite solar cell and preparation and application thereof | |
| CN110429179B (en) | AZO/titanium dioxide/tin dioxide-graphene oxide film and perovskite solar cell prepared by using same | |
| CN108091766A (en) | N-type doped electron transport layer and TiO2Method for producing layered perovskite cells | |
| CN110844936A (en) | Preparation method of antimony trisulfide nanorod array and solar cell based on antimony trisulfide nanorod array | |
| CN114678472A (en) | FAPBI3Perovskite thin film and method for efficient perovskite solar cell by using same | |
| CN114520288A (en) | Preparation method of crystalline silicoperovskite laminated solar cell | |
| CN108767112B (en) | BiI with different hole transport layers3Solar cell and preparation method thereof | |
| CN220023501U (en) | Crystalline silicon/perovskite laminated solar cell | |
| CN220307715U (en) | Perovskite solar cell with double light absorption layer structure | |
| CN110931643A (en) | Ti3C2TxOrganic solar cell with doped ZnO as cathode modification layer material and preparation method thereof | |
| CN114447234B (en) | Organic-inorganic hybrid perovskite surface interface treatment method, material and application | |
| CN115377291A (en) | Bottom-up 2D/3D perovskite heterojunction, preparation method thereof and application thereof in perovskite solar cell | |
| CN112909175B (en) | Perovskite solar cell based on non-halogen lead source and preparation method thereof | |
| CN115172609A (en) | Perovskite photosensitive layer, composition for preparing perovskite photosensitive layer, preparation method and application of perovskite photosensitive layer | |
| CN113394343B (en) | Back-incident p-i-n structure perovskite solar cell and preparation method thereof | |
| CN115440895A (en) | Perovskite solar cell containing hole transport layer and preparation method thereof | |
| CN110246969B (en) | Preparation method of perovskite solar cell with pyridine modified tin oxide compact layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |