CN113394343A - Back-incident p-i-n structure perovskite solar cell and preparation method thereof - Google Patents

Back-incident p-i-n structure perovskite solar cell and preparation method thereof Download PDF

Info

Publication number
CN113394343A
CN113394343A CN202110020736.5A CN202110020736A CN113394343A CN 113394343 A CN113394343 A CN 113394343A CN 202110020736 A CN202110020736 A CN 202110020736A CN 113394343 A CN113394343 A CN 113394343A
Authority
CN
China
Prior art keywords
perovskite
solar cell
copper oxide
incident
perovskite solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202110020736.5A
Other languages
Chinese (zh)
Other versions
CN113394343B (en
Inventor
吴璠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huzhou University
Original Assignee
Huzhou University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huzhou University filed Critical Huzhou University
Priority to CN202110020736.5A priority Critical patent/CN113394343B/en
Publication of CN113394343A publication Critical patent/CN113394343A/en
Application granted granted Critical
Publication of CN113394343B publication Critical patent/CN113394343B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a back-incidence p-i-n perovskite solar cell and a preparation method thereof, wherein a copper oxide nanorod array vertically grown on an FTO substrate is used as a hole transport layer of the perovskite solar cell, and an FTO (fluorine-doped tin oxide) serving as a cathode and a transparent composite electrode (V) are prepared2O5/Ag/V2O5) A back-incident perovskite solar cell being an anode. The short-circuit current density of the back incidence p-i-n perovskite solar cell constructed by the copper oxide nanorod array is found to be 23.98mA/cm2The efficiency is 17.46%; compared with the perovskite battery prepared by the copper oxide nano-film hole transport layer, the perovskite battery prepared by the copper oxide nano-array hole transport layer has dense short-circuit currentThe degree and the efficiency are greatly improved, the short-circuit current density is improved by about 1.4 times, and the efficiency is improved by about 1.7 times.

Description

Back-incident p-i-n structure perovskite solar cell and preparation method thereof
Technical Field
The invention relates to the field of nano semiconductor materials and new energy, in particular to a perovskite solar cell structure and a preparation method thereof.
Background
Hybrid perovskite structure material (CH) synthesized based on organic methylamine and inorganic lead iodide3NH3PbI3) The solar cell prepared has attracted much attention because of its advantages such as high photoelectric conversion efficiency (the highest efficiency is over 22% at present), low cost, and easy preparation [ Nature,2019,567,511 ]. At present, most of high-performance perovskite solar cells are adoptedBy TiO2An n-i-p type device structure constructed by a mesoporous layer/perovskite layer/hole transport layer. TiO 22Require high temperature preparation
Figure BDA0002887035880000011
While dopants in the Spiro-OMeTAD decrease cell stability [ Science,2017,358,739; advanced Energy Materials,2018,8,1701883 ]. Later, one adopted PEDOT: PSS/perovskite layer/PC61The p-i-n type battery device constructed by BM has relatively simple process, low annealing temperature of the film and small J-V hysteresis effect, and gradually arouses wide interest. The photoelectric conversion efficiency of the device structure is slightly lower than that of an n-i-p structure device, namely, the current PEDOT, PSS, perovskite layer and PC61BM-structured devices have efficiencies in excess of 18% [ Energy ]&Environmental Science,2015,8,1602 ]. The main role of the hole transport layer is to collect and transport photogenerated holes injected from the perovskite thin film layer, thereby realizing effective electron-hole separation, and is an important component of the perovskite solar cell, however, the PEDOT organic hole transport layer commonly used in the structure of the p-i-n device is not ideal because of the imperfect electron blocking performance and the relatively low work function (-5.0eV), thereby causing the open circuit voltage to be generally between 0.95 and 1.0V; on the other hand, the PEDOT, i.e. PSS, has acidity, is very easy to corrode a conductive glass electrode, is not beneficial to the collection of holes, and also reduces the stability of the device [ Nanoscale,2016,8, 11403; [ MEANS FOR solving PROBLEMS ] is provided. PSS material is one of the important research directions of perovskite solar cells.
Compared with the traditional organic hole transport layer, the p-type semiconductor copper oxide material has the characteristics of rich source, low cost, stable air, simple preparation process and the like; more importantly, the valence band energy level and CH of copper oxide3NH3PbI3Are well matched to achieve efficient injection and transport of holes, and thus are successfully used in hole transport layers of perovskite solar cells [ Journal of Materials Chemistry a,2017,5,20381 ]. However, it is not difficult to find that copper oxide as a hole transport layer is all the copper oxide in the study of perovskite solar cells at presentIs a planar thin film structure which greatly limits the active contact area of the perovskite and the copper oxide.
For example, patent CN111463349A discloses a method for improving the stability of perovskite solar cells, but the patent uses a thin film of copper oxide (the contact area of copper oxide with perovskite is small) and it is a bottom incidence structure. When the light enters from the bottom, the copper oxide absorbs visible light, so that the acquisition of photons by the perovskite thin film is influenced, and the problem is avoided by the top incident structure.
Disclosure of Invention
The invention aims to provide a perovskite solar cell and a preparation method thereof, which are used for solving the problem that the contact area between a hole transport layer of the existing p-i-n perovskite solar cell and perovskite is limited, so that the collection loss of photoproduction holes in the perovskite solar cell is caused.
The technical scheme for solving the technical problems comprises the following steps:
a back incidence p-i-n structure perovskite solar cell sequentially comprises a cathode, a copper oxide array, a perovskite light absorption layer, an electron transmission layer and an anode.
The cathode is transparent conductive glass.
The transparent conductive glass is one of fluorine tin oxide, indium tin oxide and aluminum zinc oxide.
The perovskite light absorption layer is selected from CH3NH3PbI3、CH3NH3PbBr3Or CH3NH3PbIxBr1-xOne type of film.
The electronic transmission layer is PC61BM。
The anode is a transparent composite electrode (V)2O5/Ag/V2O5)。
The preparation method of the perovskite solar cell with the back incidence p-i-n structure comprises the following steps:
(1) processing an FTO conductive film;
(2) preparing a copper oxide nano array hole transport layer;
(3) preparing a perovskite light absorption layer;
(4) preparing an electron transport layer;
(5) and (4) preparing a transparent composite electrode.
The preparation steps of the copper oxide nano array hole transport layer are as follows:
(1) dissolving copper acetate in ethanol, and stirring at room temperature to obtain a blue clear transparent solution;
(2) spin-coating the solution on clean FTO conductive glass through a spin coater to obtain a uniform copper acetate film;
(3) annealing in a muffle furnace to obtain a compact copper oxide film;
(4) placing the copper oxide nano-rod array in an aqueous solution consisting of copper nitrate trihydrate and hexamethylenetetramine, sealing, and reacting in an oven at 90 ℃ for 1-2 hours to obtain the copper oxide nano-rod array.
The perovskite light absorption layer is CH3NH3PbI3The perovskite light absorption layer is prepared by the following specific steps: (1) will CH3NH2And PbI2Adding the mixture into an organic mixed solvent, wherein the organic mixed solvent is prepared from gamma-butyrolactone and dimethyl sulfoxide according to a volume ratio of 7: 3, preparing; then stirring to obtain yellow clear perovskite precursor liquid;
(2) spin-coating the perovskite precursor solution on the copper oxide nanorod array obtained in the step by using a spin coater in a nitrogen glove box, and annealing the substrate by using a heating plate in the nitrogen glove box to obtain CH3NH3PbI3A perovskite light absorbing layer.
The preparation method of the electron transport layer comprises the following steps:
(1) will PC61BM powder is dissolved in chlorobenzene;
(2) spin-coating the above solution on CH in a nitrogen glove box by a spin coater3NH3PbI3A perovskite light-absorbing layer;
(3) the substrate was annealed using a hot plate in a nitrogen glove box.
In the present invention, we utilize copper oxide nanoparticlesThe array replaces a copper oxide thin film, which greatly increases the contact area of copper oxide and perovskite, thereby better separating and transferring photogenerated holes in the perovskite; meanwhile, the nanorod array provides a direct hole transmission channel, and the interface charge recombination degree can be reduced, so that the photoelectric performance of the perovskite solar cell can be further improved. In addition, the geometric dimension and the spatial distribution of the array are not easy to change in the using process, the change of the morphological structure of the optical active layer under the illumination temperature is avoided, and the stability of the structure and the performance of the battery is improved. We use a transparent electrode (V)2O5/Ag/V2O5) The conventional top metal electrode is replaced, and the back incidence p-i-n structural perovskite solar cell with the copper oxide nano array as the hole transport layer is obtained.
The invention has the beneficial effects that:
(1) according to the invention, the copper oxide array is adopted to replace the conventional planar thin film as a hole transport layer to prepare the back-incidence p-i-n perovskite solar cell, so that the photocurrent of the cell can be obviously improved. In the invention, the planar copper oxide film is used as a hole transport layer, and the short-circuit current density and the efficiency of the battery are respectively 16.71mA/cm2And 10.21%; PSS film as hole transport layer, and short-circuit current density and efficiency of the cell are 16.35mA/cm2And 10.56%; after the copper oxide array is used as a hole transport layer, the short-circuit current density and efficiency of the cell can obtain 23.98mA/cm2And 17.46%, the cell performance is significantly enhanced.
(2) According to the invention, the copper oxide array is used as a hole transport layer, so that the contact area between the copper oxide and the perovskite can be greatly increased, the photoproduction holes in the perovskite can be better separated and transferred, the collection performance of the holes is improved, and the photocurrent of the battery is improved.
(3) The back-incident p-i-n perovskite solar cell is simple and convenient in preparation method, low in equipment requirement, suitable for large-scale application and high in application value in the fields of photovoltaic materials, low-price solar cell devices and the like.
Drawings
FIG. 1 is a schematic structural diagram of a back-incident p-i-n perovskite solar cell of the present invention; the numerical designations in the drawings illustrate the following: 1. a cathode; 2. a copper oxide nanoarray hole transport layer; 3. CH (CH)3NH3PbI3A perovskite light-absorbing layer; 4. an electron transport layer; 5. and an anode.
Fig. 2 shows the current-voltage performance of a back-incident p-i-n perovskite solar cell under illumination (AM1.5) according to the embodiment of the present invention. Wherein, (a) is the current-voltage performance of the cell under illumination (AM1.5) using 1h copper oxide nanoarrays as hole transport layer, i.e. example 1; (b) in order to use 1.5h copper oxide nanoarrays as the current-voltage performance of the hole transport layer cell under illumination (AM1.5), i.e. example 2; (c) current-voltage performance for cells using 2h copper oxide nanoarrays as hole transport layer under illumination (AM1.5), i.e. example 3.
Fig. 3 shows the current-voltage performance of a back-incident p-i-n perovskite solar cell provided by the comparative example of the invention under illumination (AM 1.5). Wherein (a) is the current-voltage performance of the cell under illumination (AM1.5) using a copper oxide nano-film as a hole transport layer, i.e. comparative example 1; (b) PSS film as hole transport layer cell Current-Voltage performance under illumination (AM1.5), comparative example 2.
Detailed Description
Example 1
Processing the FTO conductive film: and ultrasonically cleaning the FTO conductive glass by using a glass cleaning agent, acetone and isopropanol, blow-drying by using nitrogen, and carrying out ultraviolet-ozone treatment for 30 minutes.
The preparation method of the copper oxide nano array hole transport layer comprises the following steps:
(1) 0.02 g of copper acetate was dissolved in 10ml of ethanol and stirred at room temperature for 12 hours to give a blue, clear and transparent solution.
(2) And (3) rotationally coating the solution on clean FTO conductive glass at the rotating speed of 2000 revolutions per minute by a spin coater to obtain a uniform copper acetate film.
(3) Annealing in a muffle furnace at 350 deg.C for 30 minutes to obtain a compact copper oxide film.
(4) Placing the mixture into an aqueous solution consisting of 0.25mol/L copper nitrate trihydrate and 0.25mol/L hexamethylenetetramine, sealing, and reacting in an oven at 90 ℃ for 1 hour to obtain the copper oxide nanorod array.
CH3NH3PbI3The preparation steps of the perovskite light absorption layer are as follows:
(1) adding 209mg of CH3NH2And 581mg of PbI2Added to 1ml of an organic mixed solvent composed of γ -butyrolactone and dimethyl sulfoxide in a volume ratio of 7: 3, and preparing the product. Then stirring for 2h at 80 ℃ to obtain a yellow clear perovskite precursor solution.
(2) Spin-coating the perovskite precursor solution on the copper oxide nanorod array obtained in the step by using a spin coater in a nitrogen glove box, and annealing the substrate by using a heating plate in the nitrogen glove box to obtain CH3NH3PbI3The annealing temperature of the perovskite light absorption layer is 80 ℃, and the annealing time is 10 minutes.
The preparation steps of the electron transport layer are as follows:
(1) mixing 15mg of PC61BM powder was dissolved in 1ml of chlorobenzene.
(2) The solution was spin coated on CH in a nitrogen glove box by a spin coater at 2000 rpm3NH3PbI3On the perovskite light absorbing layer.
(3) The substrate was annealed in a nitrogen glove box using a hot plate at 80 ℃ for 5 minutes.
Preparing a transparent composite electrode: v with the thickness of 10nm is firstly deposited on the electron transport layer in a vacuum plating cavity by means of thermal evaporation2O5Then silver was deposited to a thickness of 9nm and finally V to a thickness of 40nm2O5。
Example 2
Processing the FTO conductive film: and ultrasonically cleaning the FTO conductive glass by using a glass cleaning agent, acetone and isopropanol, blow-drying by using nitrogen, and carrying out ultraviolet-ozone treatment for 30 minutes.
The preparation method of the copper oxide nano array hole transport layer comprises the following steps:
(1) 0.02 g of copper acetate was dissolved in 10ml of ethanol and stirred at room temperature for 12 hours to give a blue, clear and transparent solution.
(2) And (3) rotationally coating the solution on clean FTO conductive glass at the rotating speed of 2000 revolutions per minute by a spin coater to obtain a uniform copper acetate film.
(3) Annealing in a muffle furnace at 350 deg.C for 30 minutes to obtain a compact copper oxide film.
(4) Placing the mixture into an aqueous solution consisting of 0.25mol/L copper nitrate trihydrate and 0.25mol/L hexamethylenetetramine, sealing, and reacting in an oven at 90 ℃ for 1.5 hours to obtain the copper oxide nanorod array.
CH3NH3PbI3The preparation steps of the perovskite light absorption layer are as follows:
(1) adding 209mg of CH3NH2And 581mg of PbI2Added to 1ml of an organic mixed solvent composed of γ -butyrolactone and dimethyl sulfoxide in a volume ratio of 7: 3, and preparing the product. Then stirring for 2h at 80 ℃ to obtain a yellow clear perovskite precursor solution.
(2) Spin-coating the perovskite precursor solution on the copper oxide nanorod array obtained in the step by using a spin coater in a nitrogen glove box, and annealing the substrate by using a heating plate in the nitrogen glove box to obtain CH3NH3PbI3The annealing temperature of the perovskite light absorption layer is 80 ℃, and the annealing time is 10 minutes.
The preparation steps of the electron transport layer are as follows:
(1) mixing 15mg of PC61BM powder was dissolved in 1ml of chlorobenzene.
(2) The solution was spin coated on CH in a nitrogen glove box by a spin coater at 2000 rpm3NH3PbI3On the perovskite light absorbing layer.
(3) The substrate was annealed in a nitrogen glove box using a hot plate at 80 ℃ for 5 minutes.
Preparing a transparent composite electrode: the electron transport layer is firstly deposited with the thickness of 10nm on the electron transport layer by means of thermal evaporation in a vacuum plating chamberV of2O5Then silver was deposited to a thickness of 9nm and finally V to a thickness of 40nm2O5。
Example 3
Processing the FTO conductive film: and ultrasonically cleaning the FTO conductive glass by using a glass cleaning agent, acetone and isopropanol, blow-drying by using nitrogen, and carrying out ultraviolet-ozone treatment for 30 minutes.
The preparation method of the copper oxide nano array hole transport layer comprises the following steps:
(1) 0.02 g of copper acetate was dissolved in 10ml of ethanol and stirred at room temperature for 12 hours to give a blue, clear and transparent solution.
(2) And (3) rotationally coating the solution on clean FTO conductive glass at the rotating speed of 2000 revolutions per minute by a spin coater to obtain a uniform copper acetate film.
(3) Annealing in a muffle furnace at 350 deg.C for 30 minutes to obtain a compact copper oxide film.
(4) Placing the mixture into an aqueous solution consisting of 0.25mol/L copper nitrate trihydrate and 0.25mol/L hexamethylenetetramine, sealing, and reacting in an oven at 90 ℃ for 2 hours to obtain the copper oxide nanorod array.
CH3NH3PbI3The preparation steps of the perovskite light absorption layer are as follows:
(1) adding 209mg of CH3NH2And 581mg of PbI2Added to 1ml of an organic mixed solvent composed of γ -butyrolactone and dimethyl sulfoxide in a volume ratio of 7: 3, and preparing the product. Then stirring for 2h at 80 ℃ to obtain a yellow clear perovskite precursor solution.
(2) Spin-coating the perovskite precursor solution on the copper oxide nanorod array obtained in the step by using a spin coater in a nitrogen glove box, and annealing the substrate by using a heating plate in the nitrogen glove box to obtain CH3NH3PbI3The annealing temperature of the perovskite light absorption layer is 80 ℃, and the annealing time is 10 minutes.
The preparation steps of the electron transport layer are as follows:
(1) mixing 15mg of PC61BM powder was dissolved in 1ml of chlorobenzene.
(2) Nitrogen glove boxThe solution was spin coated on CH by spin coater at 2000 rpm3NH3PbI3On the perovskite light absorbing layer.
(3) The substrate was annealed in a nitrogen glove box using a hot plate at 80 ℃ for 5 minutes.
Preparing a transparent composite electrode: v with the thickness of 10nm is firstly deposited on the electron transport layer in a vacuum plating cavity by means of thermal evaporation2O5Then silver was deposited to a thickness of 9nm and finally V to a thickness of 40nm2O5。
Comparative example 1
Comparative example 1 is a back-incident p-i-n perovskite solar cell prepared with a copper oxide nano-film hole transport layer.
Processing the FTO conductive film: and ultrasonically cleaning the FTO conductive glass by using a glass cleaning agent, acetone and isopropanol, blow-drying by using nitrogen, and carrying out ultraviolet-ozone treatment for 30 minutes.
The preparation method of the copper oxide nano film hole transport layer comprises the following steps:
(1) 0.02 g of copper acetate was dissolved in 10ml of ethanol and stirred at room temperature for 12 hours to give a blue, clear and transparent solution.
(2) And (3) rotationally coating the solution on clean FTO conductive glass at the rotating speed of 2000 revolutions per minute by a spin coater to obtain a uniform copper acetate film.
(3) Annealing in a muffle furnace at 350 deg.C for 30 minutes to obtain a compact copper oxide film.
CH3NH3PbI3The preparation steps of the perovskite light absorption layer are as follows:
(1) adding 209mg of CH3NH2And 581mg of PbI2Added to 1ml of an organic mixed solvent composed of γ -butyrolactone and dimethyl sulfoxide in a volume ratio of 7: 3, and preparing the product. Then stirring for 2h at 80 ℃ to obtain a yellow clear perovskite precursor solution.
(2) Spin-coating the perovskite precursor solution on the copper oxide nano-film obtained in the step by using a spin coater in a nitrogen glove box, and annealing the substrate by using a heating plate in the nitrogen glove boxTo obtain CH3NH3PbI3The annealing temperature of the perovskite light absorption layer is 80 ℃, and the annealing time is 10 minutes.
The preparation steps of the electron transport layer are as follows:
(1) mixing 15mg of PC61BM powder was dissolved in 1ml of chlorobenzene.
(2) The solution was spin coated on CH in a nitrogen glove box by a spin coater at 2000 rpm3NH3PbI3On the perovskite light absorbing layer.
(3) The substrate was annealed in a nitrogen glove box using a hot plate at 80 ℃ for 5 minutes.
Preparing a transparent composite electrode: v with the thickness of 10nm is firstly deposited on the electron transport layer in a vacuum plating cavity by means of thermal evaporation2O5Then silver was deposited to a thickness of 9nm and finally V to a thickness of 40nm2O5。
Comparative example 2
Comparative example 2 is a back-incident p-i-n perovskite solar cell prepared from a PEDOT PSS organic thin film hole transport layer.
Processing the FTO conductive film: and ultrasonically cleaning the FTO conductive glass by using a glass cleaning agent, acetone and isopropanol, blow-drying by using nitrogen, and carrying out ultraviolet-ozone treatment for 30 minutes.
Preparation of PEDOT PSS organic hole transport layer: firstly, filtering a PEDOT/PSS solution by using a 0.45-micrometer filter head, and then spin-coating the PEDOT/PSS solution on a clean FTO conductive substrate by using a spin coater under the air, wherein the spin-coating speed is 4500 rpm for 60 s. And then heat-treated at 145 ℃ for 10 minutes in air to obtain a PEDOT PSS film layer as a hole transport layer.
CH3NH3PbI3The preparation steps of the perovskite light absorption layer are as follows:
(1) adding 209mg of CH3NH2And 581mg of PbI2Added to 1ml of an organic mixed solvent composed of γ -butyrolactone and dimethyl sulfoxide in a volume ratio of 7: 3, and preparing the product. Then stirring for 2h at 80 ℃ to obtain a yellow clear perovskite precursor solution.
(2) Spin-coating the perovskite precursor solution on the copper oxide nano-film obtained in the step by using a spin coater in a nitrogen glove box, and annealing the substrate by using a heating plate in the nitrogen glove box to obtain CH3NH3PbI3The annealing temperature of the perovskite light absorption layer is 80 ℃, and the annealing time is 10 minutes.
The preparation steps of the electron transport layer are as follows:
(1) mixing 15mg of PC61BM powder was dissolved in 1ml of chlorobenzene.
(2) The solution was spin coated on CH in a nitrogen glove box by a spin coater at 2000 rpm3NH3PbI3On the perovskite light absorbing layer.
(3) The substrate was annealed in a nitrogen glove box using a hot plate at 80 ℃ for 5 minutes.
Preparing a transparent composite electrode: v with the thickness of 10nm is firstly deposited on the electron transport layer in a vacuum plating cavity by means of thermal evaporation2O5Then silver was deposited to a thickness of 9nm and finally V to a thickness of 40nm2O5。
The current-voltage (J-V) performance characterization results of the perovskite solar cells prepared in the embodiments 1, 2, 3, 1 and 2 under illumination (AM1.5) are shown in the attached figure 2. The J-V test is completed in an air room temperature environment; the short-circuit current density and the efficiency of the perovskite battery prepared by the copper oxide nano film hole transport layer are respectively 16.71mA/cm2And 10.21%. The short-circuit current density and the efficiency of the perovskite battery prepared by the PEDOT-PSS nano film hole transport layer are respectively 16.35mA/cm2And 10.56%. Compared with the perovskite battery prepared by the copper oxide nano film and the PEDOT/PSS organic film hole transport layer, the perovskite battery prepared by the copper oxide nano array hole transport layer has greatly improved short-circuit current density and efficiency, and the detailed comparison is shown in Table 1.
Table 1.
Figure BDA0002887035880000111
Note: the J-V performance test is completed in a laboratory environment, and the effective area of the battery is 16mm2；Voc、JscFF and η are the open circuit voltage, short circuit current, fill factor and conversion efficiency of the cell, respectively.
The above embodiments are only for illustrating the technical solution of the present invention and not for limiting the same, and those skilled in the art can make various corresponding changes and modifications according to the present invention without departing from the spirit and the essence of the present invention, but these corresponding changes and modifications should fall within the protection scope of the appended claims.

Claims (10)

1. A back incidence p-i-n structure perovskite solar cell is characterized in that: the cathode, the copper oxide array, the perovskite light absorption layer, the electron transmission layer and the anode are sequentially included.
2. A back-incident p-i-n structural perovskite solar cell as claimed in claim 1, wherein: the cathode is transparent conductive glass.
3. A back-incident p-i-n structural perovskite solar cell as claimed in claim 1, wherein: the transparent conductive glass is one of fluorine tin oxide, indium tin oxide and aluminum zinc oxide.
4. A back-incident p-i-n structural perovskite solar cell as claimed in claim 1, wherein: the perovskite light absorption layer is selected from CH3NH3PbI3、CH3NH3PbBr3Or CH3NH3PbIxBr1-xOne type of film.
5. A back-incident p-i-n structural perovskite solar cell as claimed in claim 1, wherein: the electronic transmission layer is PC61BM。
6. A back-incident p-i-n structural perovskite solar cell as claimed in claim 1, wherein: the anode is a transparent composite electrode (V)2O5/Ag/V2O5）。
7. A method of manufacturing a back-incident p-i-n structural perovskite solar cell according to claim 1, comprising the steps of:
processing an FTO conductive film;
preparing a copper oxide nano array hole transport layer;
preparing a perovskite light absorption layer;
preparing an electron transport layer;
and (4) preparing a transparent composite electrode.
8. The method for preparing a back-incident p-i-n structural perovskite solar cell as claimed in claim 7, wherein the step of preparing the copper oxide nanoarray hole transport layer is as follows:
(1) dissolving copper acetate in ethanol, and stirring at room temperature to obtain a blue clear transparent solution;
(2) spin-coating the solution on clean FTO conductive glass through a spin coater to obtain a uniform copper acetate film;
(3) annealing in a muffle furnace to obtain a compact copper oxide film;
(4) placing the copper oxide nano-rod array in an aqueous solution consisting of copper nitrate trihydrate and hexamethylenetetramine, sealing, and reacting in an oven at 90 ℃ for 1-2 hours to obtain the copper oxide nano-rod array.
9. The method for preparing a back-incident p-i-n perovskite solar cell as claimed in claim 7, wherein the perovskite light absorption layer is CH3NH3PbI3The perovskite light absorption layer is prepared by the following specific steps:
(1) will CH3NH2And PbI2Adding into an organic mixed solventThe organic mixed solvent consists of
Figure 649014DEST_PATH_IMAGE001
Butyrolactone and dimethyl sulfoxide in a volume ratio of 7: 3, preparing; then stirring to obtain yellow clear perovskite precursor liquid;
(2) spin-coating the perovskite precursor solution on the copper oxide nanorod array obtained in the step by using a spin coater in a nitrogen glove box, and annealing the substrate by using a heating plate in the nitrogen glove box to obtain CH3NH3PbI3A perovskite light absorbing layer.
10. The method for preparing a back-incident p-i-n structural perovskite solar cell as claimed in claim 7, wherein the electron transport layer is prepared by the following specific method:
(1) will PC61BM powder is dissolved in chlorobenzene;
(2) spin-coating the above solution on CH in a nitrogen glove box by a spin coater3NH3PbI3A perovskite light-absorbing layer;
(3) the substrate was annealed using a hot plate in a nitrogen glove box.
CN202110020736.5A 2021-01-07 2021-01-07 Back-incident p-i-n structure perovskite solar cell and preparation method thereof Active CN113394343B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110020736.5A CN113394343B (en) 2021-01-07 2021-01-07 Back-incident p-i-n structure perovskite solar cell and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110020736.5A CN113394343B (en) 2021-01-07 2021-01-07 Back-incident p-i-n structure perovskite solar cell and preparation method thereof

Publications (2)

Publication Number Publication Date
CN113394343A true CN113394343A (en) 2021-09-14
CN113394343B CN113394343B (en) 2022-08-05

Family

ID=77616667

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110020736.5A Active CN113394343B (en) 2021-01-07 2021-01-07 Back-incident p-i-n structure perovskite solar cell and preparation method thereof

Country Status (1)

Country Link
CN (1) CN113394343B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114716323A (en) * 2022-03-10 2022-07-08 吉林大学 Metal halide micro-nano array, preparation method and application of optical film

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1817785A (en) * 2006-01-09 2006-08-16 合肥工业大学 Production of oxide copper nanometer tube array
CN101074108A (en) * 2007-08-14 2007-11-21 北京科技大学 Method for producing cuprous nano-column array
CN103058124A (en) * 2011-10-21 2013-04-24 中国科学院合肥物质科学研究院 Copper oxide grading array film and preparation method thereof
US20150144198A1 (en) * 2013-11-26 2015-05-28 Michael D. IRWIN Solar cell materials
CN107369729A (en) * 2017-08-08 2017-11-21 湖州师范学院 A kind of nano ordered IPN total oxygen compound hetero-junction thin-film solar cell and preparation method thereof
CN107705993A (en) * 2017-08-21 2018-02-16 湖州师范学院 Dye-sensitized solar cells cupric oxide nano-rod array is to electrode and preparation method thereof
CN109748314A (en) * 2019-03-25 2019-05-14 郑州大学 A kind of preparation method of no template nano cuprous oxide wire array
CN109786480A (en) * 2019-01-11 2019-05-21 北京科技大学 A kind of nanometer array structure solar battery and preparation method thereof
US20190180946A1 (en) * 2016-09-23 2019-06-13 Lg Chem, Ltd. Organic-inorganic hybrid solar cell and method for manufacturing organic-inorganic hybrid solar cell
CN110224066A (en) * 2019-05-14 2019-09-10 浙江大学 A kind of translucent perovskite solar battery of no auxiliary layer and preparation method thereof
US20200102227A1 (en) * 2018-09-29 2020-04-02 Tsinghua University Nanoporous copper supported copper oxide nanosheet array composites and method thereof
CN111755256A (en) * 2020-07-14 2020-10-09 湖州师范学院 Three-dimensional ZnO/CuO nano heterogeneous hierarchical structure photoelectrode and preparation method thereof

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1817785A (en) * 2006-01-09 2006-08-16 合肥工业大学 Production of oxide copper nanometer tube array
CN101074108A (en) * 2007-08-14 2007-11-21 北京科技大学 Method for producing cuprous nano-column array
CN103058124A (en) * 2011-10-21 2013-04-24 中国科学院合肥物质科学研究院 Copper oxide grading array film and preparation method thereof
US20150144198A1 (en) * 2013-11-26 2015-05-28 Michael D. IRWIN Solar cell materials
US20190180946A1 (en) * 2016-09-23 2019-06-13 Lg Chem, Ltd. Organic-inorganic hybrid solar cell and method for manufacturing organic-inorganic hybrid solar cell
CN107369729A (en) * 2017-08-08 2017-11-21 湖州师范学院 A kind of nano ordered IPN total oxygen compound hetero-junction thin-film solar cell and preparation method thereof
CN107705993A (en) * 2017-08-21 2018-02-16 湖州师范学院 Dye-sensitized solar cells cupric oxide nano-rod array is to electrode and preparation method thereof
US20200102227A1 (en) * 2018-09-29 2020-04-02 Tsinghua University Nanoporous copper supported copper oxide nanosheet array composites and method thereof
CN109786480A (en) * 2019-01-11 2019-05-21 北京科技大学 A kind of nanometer array structure solar battery and preparation method thereof
CN109748314A (en) * 2019-03-25 2019-05-14 郑州大学 A kind of preparation method of no template nano cuprous oxide wire array
CN110224066A (en) * 2019-05-14 2019-09-10 浙江大学 A kind of translucent perovskite solar battery of no auxiliary layer and preparation method thereof
CN111755256A (en) * 2020-07-14 2020-10-09 湖州师范学院 Three-dimensional ZnO/CuO nano heterogeneous hierarchical structure photoelectrode and preparation method thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MUJAHID M , CHEN C , ZHANG J , ET AL.: "Recent advances in semitransparent perovskite solar cells", 《INFOMAT》 *
ZUO C , DING L .: "Solution‐Processed Cu2O and CuO as Hole Transport Materials for Efficient Perovskite Solar Cells", 《SMALL》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114716323A (en) * 2022-03-10 2022-07-08 吉林大学 Metal halide micro-nano array, preparation method and application of optical film

Also Published As

Publication number Publication date
CN113394343B (en) 2022-08-05

Similar Documents

Publication Publication Date Title
EP3172776B9 (en) Mesoscopic framework for organic-inorganic perovskite based photoelectric conversion device and method for manufacturing the same
CN110246967B (en) Method for preparing flexible perovskite solar cell at low temperature
WO2016012274A1 (en) Organic-inorganic tandem solar cell
CN109728169B (en) Perovskite solar cell doped with functional additive and preparation method thereof
CN101901693A (en) Graphene composite dye-sensitized solar cell light anode and preparation method thereof
CN109768167B (en) Perovskite solar cell without current lag and preparation method thereof
CN109216557A (en) One kind being based on citric acid/SnO2Perovskite solar battery of electron transfer layer and preparation method thereof
CN106384784A (en) Perovskite solar cell provided with composite electron transport layer structure
CN110335945B (en) Double-electron-transport-layer inorganic perovskite solar cell and manufacturing method and application thereof
CN110518127A (en) A kind of perovskite solar battery and preparation method based on surfactant passivation
CN109065724B (en) Mo-titanium dioxide-AgNWs flexible perovskite solar cell and preparation method thereof
CN109103280B (en) Solar cell with all-inorganic perovskite ferroelectric fiber composite structure and preparation method thereof
CN110844936A (en) Preparation method of antimony trisulfide nanorod array and solar cell based on antimony trisulfide nanorod array
CN113035991A (en) Low-temperature preparation CsPbI3Method for flexible perovskite solar cell
CN110676385A (en) Carbon-based perovskite solar cell based on multifunctional interface modification layer
CN111029466B (en) Perovskite solar cell without carrier transport layer and preparation method thereof
CN106299141A (en) A kind of manufacture method of the perovskite solaode of composite electron transport layer structure
Zheng et al. Mesostructured perovskite solar cells based on Zn2SnO4 Single Crystal Mesoporous Layer with efficiency of 18.32%
CN108767112B (en) BiI with different hole transport layers3Solar cell and preparation method thereof
CN114678472A (en) FAPBI3Perovskite thin film and method for efficient perovskite solar cell by using same
CN110808333A (en) Perovskite solar cell based on copper-zinc-tin-sulfur-selenium hole transport layer and preparation method thereof
CN108878657B (en) Preparation method of high-efficiency carbon-based perovskite solar cell
CN113394343B (en) Back-incident p-i-n structure perovskite solar cell and preparation method thereof
CN107732014B (en) Solar cell based on ternary inorganic body type heterojunction thin film and preparation method thereof
CN105448524B (en) Ag doping organic metal perovskite material, solar cell and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant