CN101074108A - Method for producing cuprous nano-column array - Google Patents
Method for producing cuprous nano-column array Download PDFInfo
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- CN101074108A CN101074108A CN 200710118801 CN200710118801A CN101074108A CN 101074108 A CN101074108 A CN 101074108A CN 200710118801 CN200710118801 CN 200710118801 CN 200710118801 A CN200710118801 A CN 200710118801A CN 101074108 A CN101074108 A CN 101074108A
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Abstract
Production of cuprous oxide nano-column array is carried out by washing Cu pieces in hydrochloric acid and acetone for 10-15 mins separately, washing by de-ionized water, blow drying for Cu pieces, putting clean Cu pieces into horizontal tube furnace, inducing into air by 3-5 ml/min, raising temperature to 335-345 degree by 8-10 degree /min, keeping temperature for 120-150 mins, and naturally cooling to obtain final product. It's simple, cheap and has no environmental pollution.
Description
Technical field
The invention belongs to the nano material preparation technical field, a kind of method for preparing cuprous nano-column array especially is provided.
Background technology
Red copper oxide (Cu
2O) be a kind of p N-type semiconductorN, the about 2.0eV of energy gap, be rare can be by the semiconductor material of excited by visible light, being widely used in fields such as solar cell, gas sweetening, wastewater treatment, sterilization, deodorizing, agricultural chemicals and anti-fouling ship paint, also is catalyzer commonly used in the petroleum chemical industry.Work as Cu
2The size of O is reduced to after the nanometer scale, because of it has bigger specific surface area and good Surface Physical Chemistry character makes it have great application prospect at aspects such as solar cell, microelectronic device, gas catalysis, gas sensors.Had much about Cu at present
2The report of O nanostructure goes out the Cu of different diameter as employing electrochemical production such as Nikesh
2O nano particle [V.V.Nikesh, A.B.Mandale, K.R.Patil, Shailaja Mahamuni, Materials Research Bulletin, 40 (2005) 694-700], M.Z.Wei etc. adopt hydro-thermal synthetic method to obtain Cu
2O nano-pillar [M.Z.Wei, N.Lun, X.C.Ma, S.L.Wen, Materials Letters, 61 (2007) 2147-2150], employing chemical precipitation methods such as Yu Ying are prepared stable Cu
2O whisker [Yu Ying, Du Feipeng, Yang Shengjun, Li Jialin, the patent No.: 03128315.2], Wang Wenzhong etc. adopt reduction method to obtain Cu
2O nano wire [Wang Wenzhong, Wang Guanghou, the patent No.: 02137806.1].But, so far, do not see about Cu as yet
2The report of O nano column array, the present invention adopts first in the world and extremely simply the method for copper sheet low temperature thermal evaporation is successfully prepared big area Cu
2The O nano column array.The present invention does not need complicated processing unit, only need simple tube furnace to get final product, and operating procedure is simple, and cost is also very low.
Summary of the invention
The object of the present invention is to provide a kind of method for preparing cuprous nano-column array, adopt the Cu substrate preparation to go out Cu
2The O nano column array, and realize the controlled preparation of big area of array under the cold condition.
The present invention adopts the method for thermal evaporation to go out Cu based on the Cu substrate preparation
2O nano column array, nano-pillar are cubic structure, and diameter is a nanometer scale.
Realize that technical scheme of the present invention may further comprise the steps:
(1) the Cu sheet is cleaned 10~15min respectively in hydrochloric acid (volume fraction is 5~7%) and acetone, with rubber pipette bulb the Cu sheet is dried up again after rinsing well with deionized water.
(2) the Cu sheet after will cleaning is placed in the horizontal pipe furnace, feeds the air of 3~5ml/min.
(3) tube furnace is warming up to 335~345 ℃ with the speed of 8~10 ℃/min, naturally cooling behind insulation 120~150min can obtain required product.
Advantage of the present invention:
The present invention does not need complicated vacuum system, only needs to heat the Cu substrate and can obtain Cu in the air of weak gas flow is arranged
2The O nano column array.The method that adopts is simple, and cost is very low, is a kind of preparation method of environmental protection.
Compare with general CVD (Chemical Vapor Deposition) method, greatly reduce synthesis temperature, about 340 ℃, can obtain Cu
2The O nano column array.
Method provided by the invention can be prepared large-area Cu on the Cu metal substrate
2The O nano column array, this method has reference for synthetic other quasi-one-dimensional metal oxide nano-arrays.
Description of drawings
Fig. 1 Cu
2The stereoscan photograph of O nano column array can be observed the Cu substrate surface and form large-area Cu
2The O nano column array.
Fig. 2 Cu
2The X ray diffracting spectrum of O nano column array.
Fig. 3 Cu
2The power spectrum of O nano column array.
Embodiment
The Cu that following experiment condition obtains
2The pattern of O nano column array is best, productive rate is the highest:
(1) the Cu sheet is cleaned 10min respectively in hydrochloric acid (volume fraction is 5%) and acetone, with rubber pipette bulb the Cu sheet is dried up again after rinsing well with deionized water.
(2) the Cu sheet after will cleaning is placed in the horizontal pipe furnace, feeds the air of 5ml/min.
(3) tube furnace is warming up to 340 ℃ with the speed of 10 ℃/min, naturally cooling behind the insulation 120min can obtain required product.
The scanning electron microscope collection of illustrative plates of the product that Fig. 1 goes out for the present invention is prepared, as seen from the figure, the productive rate that obtains product is very high, deposits big area on the Cu substrate and is orientated single Cu
2The O nano-pillar, the about 300~400nm of the diameter of nano-pillar.Fig. 2 is Cu
2The X ray diffracting spectrum of O nano column array, product are cubic structure, and (110), (111), (200), (220) are corresponding to Cu
2The crystal face of O, what indicate " " among the figure is the diffraction peak of Cu, this signal derives from copper substrate.Fig. 3 is Cu
2The O nano column array can spectrogram, illustrate that product has only Cu and two kinds of O elementary composition.
Claims (2)
1, a kind of method for preparing cuprous nano-column array is characterized in that, processing step is:
(1) the Cu sheet is cleaned 10~15min respectively in hydrochloric acid and acetone, with rubber pipette bulb the Cu sheet is dried up again after rinsing well with deionized water;
(2) the Cu sheet after will cleaning is placed in the horizontal pipe furnace, feeds the air of 3~5ml/min;
(3) tube furnace is warming up to 335~345 ℃ with the speed of 8~10 ℃/min, naturally cooling behind insulation 120~150min obtains required product.
2, in accordance with the method for claim 1, it is characterized in that the volume fraction of hydrochloric acid is 5~7%.
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CNB2007101188018A CN100500571C (en) | 2007-08-14 | 2007-08-14 | Method for producing cuprous nano-column array |
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CNB2007101188018A CN100500571C (en) | 2007-08-14 | 2007-08-14 | Method for producing cuprous nano-column array |
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CN101074108A true CN101074108A (en) | 2007-11-21 |
CN100500571C CN100500571C (en) | 2009-06-17 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105753034A (en) * | 2016-02-28 | 2016-07-13 | 桂林理工大学 | Preparation method of Cu2O nano film |
CN105967220A (en) * | 2016-05-04 | 2016-09-28 | 浙江大学 | Preparation method of high quality p-type cuprous oxide film |
CN106629812A (en) * | 2016-12-10 | 2017-05-10 | 南京理工大学 | Preparation method of cuprous oxide nanowire material |
CN108689424A (en) * | 2017-03-31 | 2018-10-23 | 本田技研工业株式会社 | The method for preparing metal and metal oxide nanoparticles |
CN109748314A (en) * | 2019-03-25 | 2019-05-14 | 郑州大学 | A kind of preparation method of no template nano cuprous oxide wire array |
CN111599881A (en) * | 2019-10-16 | 2020-08-28 | 江苏科技大学 | Single crystal cuprous oxide composite semiconductor nano generator and manufacturing method thereof |
CN113394343A (en) * | 2021-01-07 | 2021-09-14 | 湖州师范学院 | Back-incident p-i-n structure perovskite solar cell and preparation method thereof |
CN113651353A (en) * | 2021-05-12 | 2021-11-16 | 苏州北美国际高级中学 | Preparation method of cuprous oxide quantum dots |
CN114232019A (en) * | 2021-11-26 | 2022-03-25 | 南华大学 | Ag nanoparticle-loaded copper-based nano array catalyst and preparation method and application thereof |
-
2007
- 2007-08-14 CN CNB2007101188018A patent/CN100500571C/en not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105753034A (en) * | 2016-02-28 | 2016-07-13 | 桂林理工大学 | Preparation method of Cu2O nano film |
CN105967220A (en) * | 2016-05-04 | 2016-09-28 | 浙江大学 | Preparation method of high quality p-type cuprous oxide film |
CN106629812A (en) * | 2016-12-10 | 2017-05-10 | 南京理工大学 | Preparation method of cuprous oxide nanowire material |
CN106629812B (en) * | 2016-12-10 | 2018-09-25 | 南京理工大学 | A kind of preparation method of nano cuprous oxide wire material |
CN108689424A (en) * | 2017-03-31 | 2018-10-23 | 本田技研工业株式会社 | The method for preparing metal and metal oxide nanoparticles |
CN109748314A (en) * | 2019-03-25 | 2019-05-14 | 郑州大学 | A kind of preparation method of no template nano cuprous oxide wire array |
CN111599881A (en) * | 2019-10-16 | 2020-08-28 | 江苏科技大学 | Single crystal cuprous oxide composite semiconductor nano generator and manufacturing method thereof |
CN113394343A (en) * | 2021-01-07 | 2021-09-14 | 湖州师范学院 | Back-incident p-i-n structure perovskite solar cell and preparation method thereof |
CN113651353A (en) * | 2021-05-12 | 2021-11-16 | 苏州北美国际高级中学 | Preparation method of cuprous oxide quantum dots |
CN114232019A (en) * | 2021-11-26 | 2022-03-25 | 南华大学 | Ag nanoparticle-loaded copper-based nano array catalyst and preparation method and application thereof |
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CN100500571C (en) | 2009-06-17 |
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