CN100347082C - Lurge area p-n junction nano silicon line array and preparing method thereof - Google Patents
Lurge area p-n junction nano silicon line array and preparing method thereof Download PDFInfo
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- CN100347082C CN100347082C CNB03136182XA CN03136182A CN100347082C CN 100347082 C CN100347082 C CN 100347082C CN B03136182X A CNB03136182X A CN B03136182XA CN 03136182 A CN03136182 A CN 03136182A CN 100347082 C CN100347082 C CN 100347082C
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- silicon
- hydrofluoric acid
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000005543 nano-size silicon particle Substances 0.000 title description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- 239000010703 silicon Substances 0.000 claims abstract description 35
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000002360 preparation method Methods 0.000 claims abstract description 28
- 239000008367 deionised water Substances 0.000 claims abstract description 20
- 238000001027 hydrothermal synthesis Methods 0.000 claims abstract description 18
- 229910001961 silver nitrate Inorganic materials 0.000 claims abstract description 15
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
- 229910052799 carbon Inorganic materials 0.000 claims description 23
- 238000001816 cooling Methods 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims description 2
- 230000002000 scavenging effect Effects 0.000 claims description 2
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 abstract description 23
- 229910021641 deionized water Inorganic materials 0.000 abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 18
- 239000002070 nanowire Substances 0.000 abstract description 9
- 238000004377 microelectronic Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000002086 nanomaterial Substances 0.000 abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 229960000935 dehydrated alcohol Drugs 0.000 description 8
- 238000002791 soaking Methods 0.000 description 7
- 238000005406 washing Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229960004756 ethanol Drugs 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The present invention discloses a silicon nanowire array and a preparation method thereof, which belongs to the technical field of the nano-material preparing technique. The present invention is characterized in that a silicon nanowire of a silicon nanowire array has a p-n junction structure; the preparation method is that the reacting solution of hydrofluoric acid and silver nitrate solution is prepared; a silicon chip of a p-n junction structure is immersed in a hydrothermal reaction vessel containing the reacting solution to be treated at 30 DEG C to 60 DEG C for 30 minutes to 60 minutes after the ultrasonic cleaning in cleaning solution; the silicon chip is withdrawn after the reacting solution is cooled; after the loose silver film on the surface of the silicon chip is removed, the silicon chip is cleaned and immersed in deionized water, and then, the silicon chip is naturally dried. Nickel nitrate can also be added into the reacting solution. The present invention has simple condition, low-temperature preparation, low cost and energy saving; the silicon nanowire array of a p-n junction structure, which is prepared by the present invention, has typical rectifying effect and important application outlook in the microelectronic industry and the nano-electronic industry.
Description
Technical field
The present invention relates to a kind of nano linear carbon array and preparation method thereof, especially relate to a kind of big area p-n junction nano linear carbon array and preparation method thereof, belong to nano material preparation and applied technical field.
Background technology
Monodimension nanometer material will be given traditional material because its peculiar structure and physicals not only for basic physics research provides valuable research object, are also indicating great application prospect and economic interests, and revolutionary change is brought in fields such as microelectronics.Because silicon materials are in the critical role of traditional microelectronic industry, the material of silicon-based nano structure has received great concern.Present silicon nanowire preparation method mainly contains: chemical vapor deposition method (CVD), pulse laser ablation method (Laser ablation), physical evaporation method (Physical evaporation) etc.These methods need quite high temperature and some complex apparatus usually, thereby cause higher production cost owing to the restriction of growth mechanism.As silicon line growth temperature in the patent 00117242.5 up to 1600-2000 ℃ [referring to Chinese patent 00117242.5, publication number 1277152, open date 2000.12.20].We have proposed a kind of technology of new preparation silicon nanowire [referring to: Chinese patent application number 02104179.2 at present, publication number CN 1382626A, open date 2002.12.4], this technology does not need high temperature and complex apparatus, can prepare large-area nano silicon linear array near room temperature.
P-n knot silicon structure has important role in traditional microelectronic industry, but the preparation of the 1-dimention nano homostyructure of silicon is also rarely reported people such as .C.M.Lieber and has been reported the synthetic [referring to Gudiksen of one dimension p-n junction silicon nanowire and p-n silicon line superlattice, M.S., Lauhon, L.J., Wang, J., Smith, D.C., Lieber, C.M.Nature 415 617-620 (2002)].But the preparation of p-n junction nano linear carbon array was not also reported in the world.
Summary of the invention
The purpose of this invention is to provide that a kind of preparation technology and equipment are simple, cost is low, low temperature synthetic big area p-n junction nano linear carbon array and method thereof, near prepared large-area p-n junction nano linear carbon array near room temperature has typical diode rectifying effect.
Big area p-n junction nano linear carbon array provided by the invention, it is characterized in that: the silicon nanowires in the described nano linear carbon array has the p-n junction structure.
In described p-n junction nano linear carbon array, contain hydrofluoric acid and Silver Nitrate in its etchant solution, can also add nickelous nitrate in addition.
A kind of method for preparing big area p-n junction nano linear carbon array provided by the invention, it is characterized in that: described method is carried out successively as follows:
(1) preparation reaction soln, reaction soln is made up of hydrofluoric acid and silver nitrate solution, and wherein hydrofluoric acid concentration is 2.5mol/L-10mol/L, and silver nitrate concentration is 0.01mol/l-0.06mol/l;
(2) the envelope still will be immersed in the hydrothermal reaction kettle of the reaction soln that fills above-mentioned preparation through the p-n junction silicon chip of scavenging solution ultrasonic cleaning;
(3) above-mentioned hydrothermal reaction kettle is put into baking oven, handled 30-60 minute at 30-60 ℃;
(4) take out hydrothermal reaction kettle naturally cooling in air, take out silicon chip, after the loose silver-colored film of silicon chip surface is removed,, dry naturally through washed with de-ionized water and immersion.
In described preparation method, it is the 0.02-0.10mol/l nickelous nitrate that step (1) also can add concentration.
In the present invention, acting as of hydrofluoric acid and Silver Nitrate produces the p-n silicon nanowire, and nickelous nitrate then plays the improvement effect to the p-n junction nano linear carbon array.Because this preparation method condition is simple, does not need high temperature, does not need complex apparatus, thereby greatly reduces the cost of preparation.Resulting in addition p-n junction nano linear carbon array has typical rectifying effect, has important application prospects at microelectronics and nano-electron industry.
It can accomplish the end in view evidence.
Description of drawings
Fig. 1 is the scanning electron microscope image of big area p-n junction nano linear carbon array of the present invention.
Fig. 2 is the I-V curve of p-n junction nano linear carbon array of the present invention.
Embodiment
The present invention will be further described below in conjunction with embodiment:
The present invention is in 30-60 ℃ the aqueous solution, and through ethanol, a direct step corrodes and synthesized big area p-n junction nano linear carbon array on the monocrystalline p-n junction silicon chip substrate that acetone .HF acid and deionized water simply cleaned.Its preparation process is as follows:
(a) preparation reaction soln, wherein hydrofluoric acid concentration is between 2.5mol/L-10mol/L, and silver nitrate concentration also can add the 0.02-0.10mol/l nickelous nitrate simultaneously between 0.01mol/l-0.06mol/l;
(b) will be through dehydrated alcohol, hydrofluoric acid, the p-n junction silicon chip of deionized water ultrasonic cleaning immerse and fill in the hydrothermal reaction kettle of institute's reactant ligand solution, seal hydrothermal reaction kettle then;
(c) hydrothermal reaction kettle is put into baking oven, handled 30-60 minute at 30-60 ℃;
(d) then hydrothermal reaction kettle is taken out after room temperature is cooled off 10-20 minute, take out silicon chip, after the loose silver-colored film of silicon chip surface is removed, after deionized water cleans for 2-3 time and soaks about 30 minutes, dry naturally.
Embodiment 1
At first preparation is contained 4.6mol/l hydrofluoric acid, the reaction soln of 0.01mol/l Silver Nitrate and 0.08mol/l nickelous nitrate is packed in the hydrothermal reaction kettle; The process dehydrated alcohol, the monocrystalline p-n junction silicon chip of hydrofluoric acid and deionized water ultrasonic cleaning is put into still then; Handled 60 minutes at 50 ℃,, dry the back naturally and just can obtain the p-n junction nano linear carbon array through 3-4 soaking and washing of deionized water.
At first preparation is contained 4.6mol/l hydrofluoric acid, the reaction soln of 0.015mol/l Silver Nitrate and 0.04mol/l nickelous nitrate is packed in the hydrothermal reaction kettle; The process dehydrated alcohol, the monocrystalline p-n junction silicon chip of hydrofluoric acid and deionized water ultrasonic cleaning is put into still then; Handled 60 minutes at 50 ℃,, dry the back naturally and just can obtain the p-n junction nano linear carbon array through 3-4 soaking and washing of deionized water.
Embodiment 3
At first preparation is contained 4.6mol/l hydrofluoric acid, the reaction soln of 0.02mol/l Silver Nitrate and 0.08mol/l nickelous nitrate is packed in the hydrothermal reaction kettle; The process dehydrated alcohol, the monocrystalline p-n junction silicon chip of hydrofluoric acid and deionized water ultrasonic cleaning is put into still then; Handled 45 minutes at 50 ℃,, dry the back naturally and just can obtain the p-n junction nano linear carbon array through 3-4 soaking and washing of deionized water.
Embodiment 4
At first preparation is contained 4.6mol/l hydrofluoric acid, the reaction soln of 0.03mol/l Silver Nitrate and 0.04mol/l nickelous nitrate is packed in the hydrothermal reaction kettle; The process dehydrated alcohol, the monocrystalline p-n junction silicon chip of hydrofluoric acid and deionized water ultrasonic cleaning is put into still then; Handled 60 minutes at 50 ℃,, dry the back naturally and just can obtain the p-n junction nano linear carbon array through 3-4 soaking and washing of deionized water.
Embodiment 5
At first preparation is contained 4.6mol/l hydrofluoric acid, the reaction soln of 0.04mol/l Silver Nitrate and 0.04mol/l nickelous nitrate is packed in the hydrothermal reaction kettle; The process dehydrated alcohol, the monocrystalline p-n junction silicon chip of hydrofluoric acid and deionized water ultrasonic cleaning is put into still then; Handled 60 minutes at 30 ℃,, dry the back naturally and just can obtain the p-n junction nano linear carbon array through 3-4 soaking and washing of deionized water.
Embodiment 6
At first preparation is contained 4.6mol/l hydrofluoric acid, the reaction soln of 0.05mol/l Silver Nitrate and 0.04mol/l nickelous nitrate is packed in the hydrothermal reaction kettle; The process dehydrated alcohol, the monocrystalline p-n junction silicon chip of hydrofluoric acid and deionized water ultrasonic cleaning is put into still then; Handled 60 minutes at 50 ℃,, dry the back naturally and just can obtain the p-n junction nano linear carbon array through 3-4 soaking and washing of deionized water.
Embodiment 7
At first preparation is contained 4.6mol/l hydrofluoric acid, the reaction soln of 0.06mol/l Silver Nitrate and 0.08mol/l nickelous nitrate is packed in the hydrothermal reaction kettle; The process dehydrated alcohol, the monocrystalline p-n junction silicon chip of hydrofluoric acid and deionized water ultrasonic cleaning is put into still then; Handled 30 minutes at 60 ℃,, dry the back naturally and just can obtain the p-n junction nano linear carbon array through 3-4 soaking and washing of deionized water.
Claims (1)
1, a kind of method for preparing big area p-n junction nano linear carbon array, it is characterized in that: described method is carried out successively as follows:
(1) preparation reaction soln, reaction soln is made up of hydrofluoric acid and silver nitrate solution, and wherein hydrofluoric acid concentration is 2.5mol/L-10mol/L, and silver nitrate concentration is 0.01mol/1-0.06mol/l;
(2) the envelope still will be immersed in the hydrothermal reaction kettle of the reaction soln that fills above-mentioned preparation through the monocrystalline p-n junction silicon chip of scavenging solution ultrasonic cleaning;
(3) above-mentioned hydrothermal reaction kettle is put into baking oven, handled 30-60 minute at 30-60 ℃;
(4) take out hydrothermal reaction kettle and in air, behind the naturally cooling, take out silicon chip, after the loose silver-colored film of silicon chip surface is removed,, dry naturally through washed with de-ionized water and immersion.
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CN1268543C (en) | 2004-05-11 | 2006-08-09 | 湖南大学 | Method for preparing self assembled growth silicon nano-tube and silicon nano-line by hydrothermal method |
CN1312034C (en) * | 2005-05-20 | 2007-04-25 | 清华大学 | Process for preparing monocrystalline silicon nano line array with single axial arranging |
CN1322548C (en) * | 2005-05-27 | 2007-06-20 | 清华大学 | Preparation method of silicon and silicon germanium quantum point array |
CN100424892C (en) * | 2006-08-01 | 2008-10-08 | 武汉大学 | Heterojunction pn diode based on silicon nanoline and producing method thereof |
CN102249238B (en) * | 2011-02-22 | 2012-11-14 | 中国科学院理化技术研究所 | Silicon nanowire-conductive polymer compound and preparation method and application thereof |
CN102560493B (en) * | 2012-01-18 | 2013-10-30 | 电子科技大学 | Method for preparing silicon nanowire array |
CN102856434B (en) * | 2012-09-04 | 2015-04-22 | 江苏大学 | Preparation method for square silicon nano-porous array |
CN107099294A (en) * | 2017-04-11 | 2017-08-29 | 枣庄学院 | A kind of corrosive liquid and its application process for being used to prepare silicon nanowire structure |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US6313015B1 (en) * | 1999-06-08 | 2001-11-06 | City University Of Hong Kong | Growth method for silicon nanowires and nanoparticle chains from silicon monoxide |
CN1382626A (en) * | 2002-03-15 | 2002-12-04 | 清华大学 | Process for synthesizing nano linear carbon array |
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US6313015B1 (en) * | 1999-06-08 | 2001-11-06 | City University Of Hong Kong | Growth method for silicon nanowires and nanoparticle chains from silicon monoxide |
CN1382626A (en) * | 2002-03-15 | 2002-12-04 | 清华大学 | Process for synthesizing nano linear carbon array |
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