CN105753034A - Preparation method of Cu2O nano film - Google Patents
Preparation method of Cu2O nano film Download PDFInfo
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- CN105753034A CN105753034A CN201610106968.1A CN201610106968A CN105753034A CN 105753034 A CN105753034 A CN 105753034A CN 201610106968 A CN201610106968 A CN 201610106968A CN 105753034 A CN105753034 A CN 105753034A
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B7/00—Hydraulic cements
- C04B7/36—Manufacture of hydraulic cements in general
- C04B7/38—Preparing or treating the raw materials individually or as batches, e.g. mixing with fuel
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Abstract
The invention discloses a preparation method of a Cu2O nano film. The method comprises the following steps: (1) preparing 0.3-1% HF solution by mass and 25-65% HNO3 solution by mass, and uniformly mixing the two solutions of the same volume to obtain a mixed acid solution; and (2) cutting a copper sheet into a size of 1.5cm*5cm*0.1cm, and putting into the mixed acid solution obtained in the step (1); 20-50s later and when the copper surface turns purple red, taking out the copper sheet; and performing ultrasonic cleaning of the copper sheet for 10 minutes separately by using secondary distilled water, analytically pure acetone and analytically pure alcohol in turn; and standing for 3-7 days in a water bath at 25-65 DEG C to obtain a Cu2O nano film. Compared with other related technologies, the most remarkable characteristic of the invention is that the Cu2O nano film is prepared by a normal-temperature water bath method, the preparation technology is simple, the cycle is short, and the prepared sample has relatively good photoelectric properties.
Description
Technical field
The present invention relates to a kind of Cu2The preparation method of O nano thin-film.
Background technology
Cu2O is the univalent oxide of copper, and color is scarlet, often in pulverulent solids, is susceptible to dismutation reaction and generates the copper ion of copper simple substance and bivalence acid when.The width in Red copper oxide forbidden band is at 1.9eV-2.2eV, and under the irradiation of sunlight, Red copper oxide can produce photo-generated carrier, owing to energy gap only has about 2.0eV, easily by excited by visible light, is a kind of good inorganic oxide semi-conducting material.In theory, the electricity conversion of Red copper oxide can reach 20%.Along with the development of solaode, Cu2O nano material and Cu2O composite causes people to pay close attention to more.In addition Cu2O can be additionally used in and prepares ship bottom anti-fouling paint, coloring agent, storage chinaware, electrode material.The preparation method that Red copper oxide is conventional mainly has thermal oxidation method, hydrothermal synthesis method, sol-gal process, electrochemical deposition method etc..But thermal oxidation method prepares nano cuprous oxide, reaction need at high temperature carry out, and high-temperature reaction equipment is expensive and reacts temperature required and is not readily reachable by；In sol-gel process preparation process, colloidal sol is easily reunited, and technological parameter is not easily controlled；Although hydro-thermal method method is simple, however it is necessary that thermostatic equipment, reaction temperature is higher, not easily large-scale application；Electrochemical deposition method prepares Red copper oxide, and working electrode exists " edge effect " in electrolytic process, causes electrode intermediate thin edge thick, it is difficult to uniform deposition is in substrate.The preparation technology that the present invention adopts is simple, has technological parameter and is easily controlled, and reaction condition is gentle, and manufacturing cycle is short, and it is good to record its photoelectric properties.And the method there is not been reported.
Summary of the invention
It is an object of the invention to provide a kind of method that cuprous nano thin film is prepared in room temperature water-bath.
Concretely comprise the following steps:
(1) preparation mass percent concentration be 0.3～1% HF solution and mass percent concentration be the HNO of 25～65%3Solution, two kinds of solution prepared take same volume mix homogeneously, obtain mixed acid solution.
(2) copper sheet is cut into 1.5cm × 5cm × 0.1cm size, it is placed in step (1) gained mixed acid solution, treat after 20～50 seconds that copper surface is that aubergine is taken out, successively with redistilled water, analytical pure acetone, each ultrasonic cleaning copper sheet of analytical pure ethanol 10 minutes, stand 3～7 days in 25～65 DEG C of water-baths immediately, obtain Cu2O nano thin-film, tests its photovoltage and reaches 0.0801～0.1286eV.
The present invention is compared with other correlation techniques, and most outstanding feature is that room temperature water-bath method prepares Cu2O nano thin-film, its preparation technology is simple, the cycle is short, and the sample of preparation can directly be successfully used to photovoltage test, and photovoltage value is higher, reduces relevant cost and process time.
Detailed description of the invention
Embodiment 1:
(1) preparation mass percent concentration be 0.5% HF solution and mass percent concentration be the HNO of 65%3Solution, two kinds of solution prepared take same volume mix homogeneously, obtain mixed acid solution.
(2) copper sheet is cut into 1.5cm × 5cm × 0.1cm size, it is placed in step (1) gained mixed acid solution, treat after 20 seconds that copper surface is that aubergine is taken out, successively with redistilled water, analytical pure acetone and each ultrasonic cleaning copper sheet of analytical pure ethanol 10 minutes, stand 4 days in 25 DEG C of water-baths immediately, obtain Cu2O nano thin-film, testing its photovoltage is 0.1286eV.
Embodiment 2:
(1) preparation mass percent concentration be 1% HF solution and mass percent concentration be the HNO of 25%3Solution, two kinds of solution prepared take same volume mix homogeneously, obtain mixed acid solution.
(2) copper sheet is cut into 1.5cm × 5cm × 0.1cm size, it is placed in step (1) gained mixed acid solution, treat after 50 seconds that copper surface is that aubergine is taken out, successively with redistilled water, analytical pure acetone and each ultrasonic cleaning copper sheet of analytical pure ethanol 10 minutes, stand 4 days in 45 DEG C of water-baths immediately, obtain Cu2O nano thin-film, testing its photovoltage is 0.0801eV.
Embodiment 3:
(1) preparation mass percent concentration be 0.3% HF solution and mass percent concentration be the HNO of 55%3Solution, two kinds of solution prepared take same volume mix homogeneously, obtain mixed acid solution.
(2) copper sheet is cut into 1.5cm × 5cm × 0.1cm size, it is placed in step (1) gained mixed acid solution, treat after 30 seconds that copper surface is that aubergine is taken out, successively with redistilled water, analytical pure acetone and each ultrasonic cleaning copper sheet of analytical pure ethanol 10 minutes, stand 4 days in 35 DEG C of water-baths immediately, obtain Cu2O nano thin-film, testing its photovoltage is 0.1178eV.
Embodiment 4:
(1) preparation mass percent concentration be 0.7% HF solution and mass percent concentration be the HNO of 45%3Solution, two kinds of solution prepared take same volume mix homogeneously, obtain mixed acid solution.
(2) copper sheet is cut into 1.5cm × 5cm × 0.1cm size, it is placed in step (1) gained mixed acid solution, treat after 30 seconds that copper surface is that aubergine is taken out, successively with redistilled water, analytical pure acetone and each ultrasonic cleaning copper sheet of analytical pure ethanol 10 minutes, stand 4 days in 65 DEG C of water-baths immediately, obtain Cu2O nano thin-film, testing its photovoltage is 0.0938eV.
Claims (1)
1. a Cu2The preparation method of O nano thin-film, it is characterised in that concretely comprise the following steps:
(1) preparation mass percent concentration be 0.3～1% HF solution and mass percent concentration be the HNO of 25～65%3Solution, two kinds of solution prepared take same volume mix homogeneously, obtain mixed acid solution；
(2) copper sheet is cut into 1.5cm × 5cm × 0.1cm size, it is placed in step (1) gained mixed acid solution, treat after 20～50 seconds that copper surface is that aubergine is taken out, successively with redistilled water, analytical pure acetone and each ultrasonic cleaning copper sheet of analytical pure ethanol 10 minutes, stand 3～7 days in 25～65 DEG C of water-baths immediately, obtain Cu2O nano thin-film.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610106968.1A CN105753034B (en) | 2016-02-28 | 2016-02-28 | A kind of Cu2The preparation method of O nano thin-films |
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| CN201610106968.1A CN105753034B (en) | 2016-02-28 | 2016-02-28 | A kind of Cu2The preparation method of O nano thin-films |
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| CN105753034A true CN105753034A (en) | 2016-07-13 |
| CN105753034B CN105753034B (en) | 2017-10-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106591922A (en) * | 2017-02-05 | 2017-04-26 | 桂林理工大学 | Preparation method of Cu2O nano film |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101074108A (en) * | 2007-08-14 | 2007-11-21 | 北京科技大学 | Method for producing cuprous nano-column array |
| CN101704510A (en) * | 2009-11-24 | 2010-05-12 | 华中师范大学 | Preparation method of nanometer cuprous oxide film with periodic modification of morphology |
| CN102602976A (en) * | 2012-03-09 | 2012-07-25 | 天津理工大学 | Method for preparing CuO nano-film |
| CN104150522A (en) * | 2014-05-14 | 2014-11-19 | 江苏泰禾金属工业有限公司 | Method for preparing cuprous oxide by using dry process |
-
2016
- 2016-02-28 CN CN201610106968.1A patent/CN105753034B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101074108A (en) * | 2007-08-14 | 2007-11-21 | 北京科技大学 | Method for producing cuprous nano-column array |
| CN101704510A (en) * | 2009-11-24 | 2010-05-12 | 华中师范大学 | Preparation method of nanometer cuprous oxide film with periodic modification of morphology |
| CN102602976A (en) * | 2012-03-09 | 2012-07-25 | 天津理工大学 | Method for preparing CuO nano-film |
| CN104150522A (en) * | 2014-05-14 | 2014-11-19 | 江苏泰禾金属工业有限公司 | Method for preparing cuprous oxide by using dry process |
Non-Patent Citations (7)
| Title |
|---|
| G. HULTQUIST ET AL.: "Corrosion of copper in distilled water without O2 and the detection of produced hydrogen", 《CORROSION SCIENCE》 * |
| G. HULTQUIST ET AL.: "Why copper may be able to corrode in pure water", 《CORROSION SCIENCE》 * |
| G.HULTQUISI ET AL.: "HYDROGEN EVOLUTION IN CORROSION OF COPPER In Pure Water", 《CORROSION SCIENCE》 * |
| JIANBO LIANG ET AL.: "Thin cuprous oxide films prepared by thermal oxidation of copper foils with water vapor", 《THIN SOLID FILMS》 * |
| T.E.ERIKSEN ET AL.: "On the corrosion of copper in pure water", 《CORROSION SCIENCE》 * |
| XIAOYUN FAN ET AL.: "Controllable synthesis of two different morphologies of Cu2O particles with the assistance of carbon dots", 《RSC ADVANCES》 * |
| 王中乾等: "铜表面高疏水薄膜的制备及摩擦学性能的研究", 《摩擦学学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106591922A (en) * | 2017-02-05 | 2017-04-26 | 桂林理工大学 | Preparation method of Cu2O nano film |
| CN106591922B (en) * | 2017-02-05 | 2018-05-08 | 桂林理工大学 | Cu2Preparation method of O nano film |
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| CN105753034B (en) | 2017-10-13 |
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Effective date of registration: 20210616 Address after: 28 dandelion Road, Xitong science and Technology Industrial Park, Tongzhou District, Nantong City, Jiangsu Province, 226000 Patentee after: NANTONG YINGCHUAN FILM TECHNOLOGY Co.,Ltd. Address before: 541004 the Guangxi Zhuang Autonomous Region Guilin Construction Road No. 12 Patentee before: GUILIN University OF TECHNOLOGY |
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Effective date of registration: 20230726 Address after: 226000 Industrial Park, Zhangzhishan Town, Tongzhou District, Nantong City, Jiangsu Province Patentee after: Nantong Maiwei Electronic Materials Co.,Ltd. Address before: 28 dandelion Road, Xitong science and Technology Industrial Park, Tongzhou District, Nantong City, Jiangsu Province, 226000 Patentee before: NANTONG YINGCHUAN FILM TECHNOLOGY CO.,LTD. |