CN106835242B - A kind of Cu2The preparation method of O nano-array - Google Patents
A kind of Cu2The preparation method of O nano-array Download PDFInfo
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- CN106835242B CN106835242B CN201710064972.0A CN201710064972A CN106835242B CN 106835242 B CN106835242 B CN 106835242B CN 201710064972 A CN201710064972 A CN 201710064972A CN 106835242 B CN106835242 B CN 106835242B
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/34—Anodisation of metals or alloys not provided for in groups C25D11/04 - C25D11/32
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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Abstract
The invention discloses a kind of Cu2The preparation method of O nano-array.By the mol/L of 8.8 mmol/L ~ 0.115 NH4F solution, the mol/L of 7.54 mol/L ~ 7.99 glycerine water solution are uniformly mixed with the mmol/L of 0.027 mmol/L ~ 0.295 cetyl trimethylammonium bromide (CTAB) solution, are configured to faintly acid electrolyte;Make anode with Cu piece, Pt piece makees cathode, aoxidizes 2 ~ 18 minutes under the anodic oxidation voltage of the V of 15 V ~ 35, i.e., obtains Cu in Cu on piece2O nano-array.Its photovoltage reaches 0.0801~0.2693 V.Preparation process of the present invention is simple, the period is short, can efficiently control sample Cu by changing process conditions2The thickness and its photoelectric properties of O nano-array.
Description
Technical field
The present invention relates to a kind of Cu2The preparation method of O nano-array.
Background technique
Cu2O is the univalent oxide of copper, usually brick-red powder, cubic system.It is easy to happen under acidic conditions
The copper ion of disproportionated reaction generation copper simple substance and divalent.Cu2O has less toxic, cheap, easy preparation, absorbs visible light and energy
With adjustable superiority, huge potential using value is shown in terms of the conversion of solar energy.Furthermore Cu2O can also be used to make
Standby ship bottom anti-fouling paint, colorant, storage chinaware, electrode material.Cuprous oxide band gap is in 2.2eV or so, and crystal is to hole
Conduction is relatively good, so cuprous oxide can generate photo-generated carrier under the irradiation of sunlight, easily by excited by visible light, is
A kind of good inorganic oxide semiconductor material.Theoretically, the incident photon-to-electron conversion efficiency of cuprous oxide can achieve 20%.With
The development of solar battery, Cu2O nano material and Cu2O composite material more causes people to pay close attention to.Cuprous oxide is commonly made
Standby technological parameter has important influence to the structure and performance of the thin-film material of preparation.Preparation Cu at present2The method of O has: vacuum
Evaporation, chemical vapour deposition technique, sol-gal process, magnetron sputtering method and thermal oxidation method etc..Although vacuum vapor deposition method preparation is received
Rice Cu2O film purity is higher, but required technical equipment is more demanding；Chemical vapour deposition technique prepares nanometer Cu2Reaction needed for O
Equipment is expensive and response parameter needs accurate control；In sol-gel method preparation process, colloidal sol is easy to reunite, technological parameter
It is not easily controlled；Although magnetron sputtering method method is simple, this high energy deposition method is easy to generated film surface
It causes damages, the uniformity of film is poor；Thermal oxidation method prepares nano cuprous oxide, and reaction need to carry out at high temperature, be not easy to reach.
The anodizing that the present invention uses prepares Cu2There is not been reported for O nano-array.This method have technological parameter be easy to control,
Reaction condition is mild, it is orderly aligned to prepare, density is higher and the good Cu of photoelectric properties2O nano-array.By changing work
Skill condition can efficiently control the thickness of sample array.
Summary of the invention
The object of the present invention is to provide a kind of anodizings to prepare Cu2The method of O nano-array.
The technology specifically comprises the steps of:
By the mol/L of 8.8 mmol/L ~ 0.115 NH4F solution, the mol/L of 7.54 mol/L ~ 7.99 glycerine water solution with
The mmol/L of 0.027 mmol/L ~ 0.295 cetyl trimethylammonium bromide (CTAB) solution is uniformly mixed, and is configured to faintly acid
Electrolyte;Make anode with Cu piece, Pt piece makees cathode, aoxidizes 2 ~ 18 minutes, that is, exists under the anodic oxidation voltage of the V of 15 V ~ 35
Cu on piece obtains Cu2O nano-array.Its photovoltage reaches 0.0801~0.2693 V.
For the present invention compared with other the relevant technologies, this law prepares Cu2The most significant feature of O nano-array is to utilize NH4F's
Faintly acid and glycerol have lubricity, make Cu2O nano-array is more smooth orderly.And the Cu of this pattern2O film is also more
Added with the directional transmissions for being conducive to carrier, higher photovoltage value is made it have.In addition, the deposition process of the method is at room temperature
It can be carried out, there is safety with short production cycle, easy to operate, the composition of product, crystalline condition, film thickness and other properties
Can conveniently regulating and controlling the features such as.
Specific embodiment
Embodiment 1:
By 8.8 mmol/L NH4F solution, 7.54 mol/L glycerine water solutions are mixed with 0.228 mmol/L CTAB solution
Uniformly, it is configured to faintly acid electrolyte.Make anode with Cu piece, Pt piece makees cathode, and 2 points are aoxidized under the anodic oxidation voltage of 20 V
Clock is in electrolyte under at the uniform velocity magnetic agitation state.Cu piece is taken out, obtains Cu in Cu on piece2O receives
Rice array.It tests its photovoltage and reaches 0.0801 V.
Embodiment 2:
By 0.035 mol/L NH4F solution, 7.80 mol/L glycerine water solutions and 0.027 mmol/L CTAB solution are mixed
It closes uniformly, is configured to faintly acid electrolyte.Make anode with Cu piece, Pt piece makees cathode, aoxidizes under the anodic oxidation voltage of 15 V
14 minutes, it is in electrolyte under at the uniform velocity magnetic agitation state.Cu piece is taken out, is obtained in Cu on piece
Cu2O nano-array.It tests its photovoltage and reaches 0.1732 V.
Embodiment 3:
By 0.062 mol/L NH4F solution, 7.93 mol/L glycerine water solutions and 0.027 mmol/L CTAB solution are mixed
It closes uniformly, is configured to faintly acid electrolyte.Make anode with Cu piece, Pt piece makees cathode, aoxidizes under the anodic oxidation voltage of 25 V
10 minutes, it is in electrolyte under at the uniform velocity magnetic agitation state.Cu piece is taken out, is obtained in Cu on piece
Cu2O nano-array.It tests its photovoltage and reaches 0.2693 V.
Embodiment 4:
By 0.115 mol/L NH4F solution, 7.99 mol/L glycerine water solutions and 0.094 mmol/L CTAB solution are mixed
It closes uniformly, is configured to faintly acid electrolyte.Make anode with Cu piece, Pt piece makees cathode, aoxidizes under the anodic oxidation voltage of 35 V
18 minutes, it is in electrolyte under at the uniform velocity magnetic agitation state.Cu piece is taken out, is obtained in Cu on piece
Cu2O nano-array.It tests its photovoltage and reaches 0.1944 V.
Embodiment 5:
By 0.088 mol/L NH4F solution, 7.54 mol/L glycerine water solutions and 0.295 mmol/L CTAB solution are mixed
It closes uniformly, is configured to faintly acid electrolyte.Make anode with Cu piece, Pt piece makees cathode, aoxidizes 6 under the anodic oxidation voltage of 30 V
Minute, it is in electrolyte under at the uniform velocity magnetic agitation state.Cu piece is taken out, obtains Cu in Cu on piece2O
Nano-array.It tests its photovoltage and reaches 0.1227 V.
Claims (1)
1. a kind of Cu2The preparation method of O nano-array, it is characterised in that specific steps are as follows:
By the NH containing the mol/L of 8.8 mmol/L~0.1154The glycerol liquor of F solution, the mol/L of 7.54 mol/L~7.99
The mixed solution of the cetyl trimethylammonium bromide solution of solution and the mmol/L of 0.027 mmol/L~0.295 is as electricity
Solve liquid；Make anode with Cu piece, Pt piece makees cathode, aoxidizes 2~18 minutes, that is, exists under the anodic oxidation voltage of the V of 15 V~35
Cu on piece obtains the Cu that photovoltage reaches the V of 0.0801 V~0.26932O nano-array.
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| CN106835242A CN106835242A (en) | 2017-06-13 |
| CN106835242B true CN106835242B (en) | 2018-12-21 |
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| JPS6024198B2 (en) * | 1982-11-11 | 1985-06-11 | 日本鉱業株式会社 | Manufacturing method of anode material for copper plating |
| CN1259454C (en) * | 2003-12-31 | 2006-06-14 | 南京大学 | Electrolysis preparation method of nano cuprous oxide |
| CN101429680A (en) * | 2008-08-01 | 2009-05-13 | 华中师范大学 | Production method for direct growth of one-dimensional nano cuprous oxide array on metallic copper substrate |
| CN104233433B (en) * | 2014-10-03 | 2016-09-14 | 上海工程技术大学 | A kind of method preparing cuprous oxide film |
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