CN105753034B - A kind of Cu2The preparation method of O nano thin-films - Google Patents
A kind of Cu2The preparation method of O nano thin-films Download PDFInfo
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- CN105753034B CN105753034B CN201610106968.1A CN201610106968A CN105753034B CN 105753034 B CN105753034 B CN 105753034B CN 201610106968 A CN201610106968 A CN 201610106968A CN 105753034 B CN105753034 B CN 105753034B
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B7/00—Hydraulic cements
- C04B7/36—Manufacture of hydraulic cements in general
- C04B7/38—Preparing or treating the raw materials individually or as batches, e.g. mixing with fuel
Abstract
The invention discloses a kind of Cu2The preparation method of O nano thin-films.（1）The HNO that the HF solution and mass percent concentration that preparation mass percent concentration is 0.3~1% are 25~65%3Solution, two kinds of solution prepared take same volume to be well mixed, and obtain mixed acid solution；（2）Copper sheet is cut into 1.5cm × 5cm × 0.1cm sizes, step is placed in（1）In gained mixed acid solution, treat that copper surface is taken out in aubergine after 20~50 seconds, be respectively cleaned by ultrasonic copper sheet 10 minutes with redistilled water, analysis pure acetone and analysis absolute alcohol successively, stand 3~7 days in 25~65 DEG C of water-baths immediately, obtain Cu2O nano thin-films.The present invention is compared with other correlation techniques, and most outstanding feature is that normal temperature water-bath method prepares Cu2O nano thin-films, its preparation technology is simple, the cycle is short, and the sample of preparation has preferable photoelectric properties.
Description
Technical field
The present invention relates to a kind of Cu2The preparation method of O nano thin-films.
Background technology
Cu2O is the univalent oxide of copper, and color is scarlet, often in pulverulent solids, and discrimination easily occurs under conditions of acidity
Change the copper ion of reaction generation copper simple substance and divalence.The width of cuprous oxide forbidden band is in 1.9eV-2.2eV, in the irradiation of sunshine
Under, cuprous oxide can produce photo-generated carrier, because energy gap only has 2.0eV or so, easily by excited by visible light, be a kind of good
Good inorganic oxide semi-conducting material.In theory, the electricity conversion of cuprous oxide can reach 20%.With the sun
The development of energy battery, Cu2O nano materials and Cu2O composites more cause people to pay close attention to.In addition Cu2O can also be used to prepare ship
Bottom anti-fouling paint, colouring agent, storage chinaware, electrode material.The conventional preparation method of cuprous oxide mainly has thermal oxidation method, Hydrothermal Synthesiss
Method, sol-gal process, electrochemical deposition method etc..But thermal oxidation method prepares nano cuprous oxide, reaction need to be carried out at high temperature, high
Warm consersion unit is expensive and the required temperature of reaction is not readily reachable by；In sol-gel process preparation process, colloidal sol is easily reunited,
Technological parameter is not easily controlled；Although hydro-thermal method method is simple, thermostatic equipment is needed, reaction temperature is higher, be difficult big rule
Mould application；Electrochemical deposition method prepares cuprous oxide, and working electrode has " edge effect " in electrolytic process, caused in electrode
Between thin edges it is thick, it is difficult to uniform deposition is in substrate.The preparation technology that the present invention is used is simple, is easily controlled with technological parameter
System, reaction condition is gentle, short preparation period, and it is good to measure its photoelectric properties.And there is not been reported for this method.
The content of the invention
It is an object of the invention to provide a kind of method that normal temperature water-bath prepares cuprous nano film.
Concretely comprise the following steps：
（1）The HNO that the HF solution and mass percent concentration that preparation mass percent concentration is 0.3~1% are 25~65%3
Solution, two kinds of solution prepared take same volume to be well mixed, and obtain mixed acid solution.
（2）Copper sheet is cut into 1.5cm × 5cm × 0.1cm sizes, step is placed in（1）In gained mixed acid solution, 20~50 seconds
After treat copper surface in aubergine take out, successively with redistilled water, analysis pure acetone, analysis absolute alcohol be respectively cleaned by ultrasonic copper sheet 10
Minute, 3~7 days are stood in 25~65 DEG C of water-baths immediately, Cu is obtained2O nano thin-films, test its photovoltage reach 0.0801~
0.1286V。
The present invention is compared with other correlation techniques, and most outstanding feature is that normal temperature water-bath method prepares Cu2O nano thin-films, its
Preparation technology is simple, the cycle is short, and the sample of preparation can directly be successfully used to photovoltage test, and photovoltage value is higher, reduction
Relevant cost and processing time.
Embodiment
Embodiment 1：
（1）The HNO that the HF solution and mass percent concentration that preparation mass percent concentration is 0.5% are 65%3Solution, two
Planting the solution prepared takes same volume to be well mixed, and obtains mixed acid solution.
（2）Copper sheet is cut into 1.5cm × 5cm × 0.1cm sizes, step is placed in（1）In gained mixed acid solution, treated after 20 seconds
Copper surface is taken out in aubergine, is respectively cleaned by ultrasonic 10 points of copper sheet with redistilled water, analysis pure acetone and analysis absolute alcohol successively
Clock, stands 4 days in 25 DEG C of water-baths immediately, obtains Cu2O nano thin-films, test its photovoltage for 0.1286V.
Embodiment 2：
（1）The HNO that the HF solution and mass percent concentration that preparation mass percent concentration is 1% are 25%3Solution, two kinds
The solution prepared takes same volume to be well mixed, and obtains mixed acid solution.
（2）Copper sheet is cut into 1.5cm × 5cm × 0.1cm sizes, step is placed in（1）In gained mixed acid solution, treated after 50 seconds
Copper surface is taken out in aubergine, is respectively cleaned by ultrasonic 10 points of copper sheet with redistilled water, analysis pure acetone and analysis absolute alcohol successively
Clock, stands 4 days in 45 DEG C of water-baths immediately, obtains Cu2O nano thin-films, test its photovoltage for 0.0801V.
Embodiment 3：
（1）The HNO that the HF solution and mass percent concentration that preparation mass percent concentration is 0.3% are 55%3Solution, two
Planting the solution prepared takes same volume to be well mixed, and obtains mixed acid solution.
（2）Copper sheet is cut into 1.5cm × 5cm × 0.1cm sizes, step is placed in（1）In gained mixed acid solution, treated after 30 seconds
Copper surface is taken out in aubergine, is respectively cleaned by ultrasonic 10 points of copper sheet with redistilled water, analysis pure acetone and analysis absolute alcohol successively
Clock, stands 4 days in 35 DEG C of water-baths immediately, obtains Cu2O nano thin-films, test its photovoltage for 0.1178V.
Embodiment 4：
（1）The HNO that the HF solution and mass percent concentration that preparation mass percent concentration is 0.7% are 45%3Solution, two
Planting the solution prepared takes same volume to be well mixed, and obtains mixed acid solution.
（2）Copper sheet is cut into 1.5cm × 5cm × 0.1cm sizes, step is placed in（1）In gained mixed acid solution, treated after 30 seconds
Copper surface is taken out in aubergine, is respectively cleaned by ultrasonic 10 points of copper sheet with redistilled water, analysis pure acetone and analysis absolute alcohol successively
Clock, stands 4 days in 65 DEG C of water-baths immediately, obtains Cu2O nano thin-films, test its photovoltage for 0.0938V.
Claims (1)
1. a kind of Cu2The preparation method of O nano thin-films, it is characterised in that concretely comprise the following steps：
（1）The HNO that the HF solution and mass percent concentration that preparation mass percent concentration is 0.3~1% are 25~65%3Solution,
Two kinds of solution prepared take same volume to be well mixed, and obtain mixed acid solution；
（2）Copper sheet is cut into 1.5cm × 5cm × 0.1cm sizes, step is placed in（1）In gained mixed acid solution, treated after 20~50 seconds
Copper surface is taken out in aubergine, is respectively cleaned by ultrasonic 10 points of copper sheet with redistilled water, analysis pure acetone and analysis absolute alcohol successively
Clock, stands 3~7 days in 25~65 DEG C of water-baths immediately, obtains Cu2O nano thin-films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610106968.1A CN105753034B (en) | 2016-02-28 | 2016-02-28 | A kind of Cu2The preparation method of O nano thin-films |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610106968.1A CN105753034B (en) | 2016-02-28 | 2016-02-28 | A kind of Cu2The preparation method of O nano thin-films |
Publications (2)
| Publication Number | Publication Date |
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| CN105753034A CN105753034A (en) | 2016-07-13 |
| CN105753034B true CN105753034B (en) | 2017-10-13 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106591922B (en) * | 2017-02-05 | 2018-05-08 | 桂林理工大学 | Cu2Preparation method of O nano film |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100500571C (en) * | 2007-08-14 | 2009-06-17 | 北京科技大学 | Method for producing cuprous nano-column array |
| CN101704510A (en) * | 2009-11-24 | 2010-05-12 | 华中师范大学 | Preparation method of nanometer cuprous oxide film with periodic modification of morphology |
| CN102602976A (en) * | 2012-03-09 | 2012-07-25 | 天津理工大学 | Method for preparing CuO nano-film |
| CN104150522A (en) * | 2014-05-14 | 2014-11-19 | 江苏泰禾金属工业有限公司 | Method for preparing cuprous oxide by using dry process |
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Effective date of registration: 20210616 Address after: 28 dandelion Road, Xitong science and Technology Industrial Park, Tongzhou District, Nantong City, Jiangsu Province, 226000 Patentee after: NANTONG YINGCHUAN FILM TECHNOLOGY Co.,Ltd. Address before: 541004 the Guangxi Zhuang Autonomous Region Guilin Construction Road No. 12 Patentee before: GUILIN University OF TECHNOLOGY |
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Effective date of registration: 20230726 Address after: 226000 Industrial Park, Zhangzhishan Town, Tongzhou District, Nantong City, Jiangsu Province Patentee after: Nantong Maiwei Electronic Materials Co.,Ltd. Address before: 28 dandelion Road, Xitong science and Technology Industrial Park, Tongzhou District, Nantong City, Jiangsu Province, 226000 Patentee before: NANTONG YINGCHUAN FILM TECHNOLOGY CO.,LTD. |