CN114284439A - Method for preparing CsPbI3 perovskite thin film and high-efficiency solar cell thereof in high-humidity environment and application - Google Patents
Method for preparing CsPbI3 perovskite thin film and high-efficiency solar cell thereof in high-humidity environment and application Download PDFInfo
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- MQAYPFVXSPHGJM-UHFFFAOYSA-M trimethyl(phenyl)azanium;chloride Chemical compound [Cl-].C[N+](C)(C)C1=CC=CC=C1 MQAYPFVXSPHGJM-UHFFFAOYSA-M 0.000 claims description 21
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention relates to a method for preparing CsPbI in a high-humidity environment3A perovskite thin film and a method and application of a high-efficiency perovskite solar cell thereof belong to the field of photoelectron materials and devices. The invention is fully inorganic CsPbI3The preparation of the film adopts a thermal spin coating technology to spin a precursor solution taking methylamine acetate as a solvent on an FTO conductive substrate with an electron transport layer, and the compact and uniform perovskite film is prepared through gradient annealing, wherein the whole process is completed in the air with the relative humidity of 40-80%. Then spin-coating an interface modification layer and a Spiro-OMeTAD on the film as a hole transport layer, and then evaporating MoO by using a vacuum evaporation technology3And finishing the preparation of the device by the modification layer and the metal electrode. CsPbI prepared by the method in high-humidity air3The all-inorganic perovskite solar cell has excellent photoelectric conversion efficiency.
Description
Technical Field
The invention relates to a method for preparing a compound based on methylamine acetate ionic liquid as a precursor solventThe CsPbI is prepared in the air with the relative humidity of 40-80% by regulating and controlling the proportion of lead iodide in the precursor solution3A perovskite thin film and a method for preparing a perovskite solar cell with high efficiency, in particular to a simple method for preparing a compact and uniform high-quality perovskite thin film and a solar cell device thereof in high-humidity air with the relative humidity of 40-80 percent, belonging to the field of photoelectron materials and technologies.
Background
With the continuous development of society, environmental problems caused by traditional fossil energy are more and more concerned by people, and the development of clean energy is urgent. Along with the continuous improvement of the requirement of human on clean energy, solar power generation is more and more emphasized by people. The mainstream solar power generation device in the market at present is mainly a silicon-based solar cell, but expensive raw materials become the development bottleneck of the silicon-based solar cell, and the industrial production of the silicon-based solar cell is greatly limited.
The perovskite solar cell has the characteristics of simple manufacture and low cost, and the photoelectric conversion efficiency of the perovskite solar cell is rapidly improved from 3.8% to 25.5% from 2009 to the present. However, perovskite solar cells have poor thermal stability, limiting their commercial applications. In order to improve the thermal stability of the perovskite battery, researchers have proposed a method for preparing all-inorganic perovskite by replacing the organic part in the perovskite component with an inorganic part, thereby improving the thermal, humidity and air stability of the perovskite battery.
At present, research on all-inorganic perovskite solar cells mainly focuses on optimizing thin films and device structures, and relatively few researches on interaction of perovskite precursor components are conducted. And the currently used solvents N, N-dimethyl amide (DMF) and N, N-dimethyl sulfoxide (DMSO) belong to toxic solvents, thus greatly limiting the commercial application of the solvents. The invention mainly utilizes a green solvent methylamine acetate ionic liquid solvent as a precursor solvent, and prepares the all-inorganic perovskite CsPbI in the air with the relative humidity of 40-80% by regulating the component ratio of the precursor and the synergistic effect of methylamine acetate and excessive lead iodide by a simple one-step method3The solar cell finally obtains a high-efficiency solar cell device.
Disclosure of Invention
The invention aims to solve the technical problem that an all-inorganic perovskite solar cell is sensitive to moisture in air and is based on methylamine acetate ionic liquid serving as CsPbI3Perovskite precursor solution solvent, and preparation of high-efficiency stable CsPbI in air by regulating and controlling component lead iodide proportion3A perovskite thin film and a preparation method of a solar cell.
In order to solve the technical problems, the technical scheme provided by the invention is as follows: CsPbI is prepared in air with relative humidity of 40% -80% by regulating proportion of lead iodide in precursor solution3The perovskite thin film and the method for manufacturing the high-efficiency perovskite solar cell thereof comprise the following steps:
(1) dissolving cesium iodide, dimethylamine hydroiodide and lead iodide in a molar ratio of 1:1: X (1< X <3) in methylamine acetate solvent to prepare an all-inorganic perovskite precursor solution, and heating, stirring and dissolving at the temperature of over 100 ℃ for 0.5-3 hours;
(2) spin-coating an electron transport material on transparent conductive FTO glass;
(3) coating the prepared perovskite precursor solution on an FTO conductive substrate with an electron transport layer in a spinning mode, and performing gradient annealing to obtain a flat and compact perovskite thin film;
(4) spin coating of trimethyl phenyl chlorination solution interface modification layer on perovskite layer
(5) Spin coating a hole transport layer on the perovskite layer;
(6) and vacuum evaporating an interface modification layer and a metal electrode on the hole transport layer.
Preferably, the concentration of the perovskite precursor solution in the step (1) is 100-400 mg/mL.
Preferably, the electron transport layer deposited on the transparent conductive FTO electrode in step (2) is SnO2Comprises the specific steps of spin coating SnO2Thereafter, annealing was performed at 150 ℃ for 30 minutes.
Preferably, the step (3) utilizes a thermal spin coating method, and comprises the following specific steps:
(1) the temperature of the substrate is 50-100 ℃;
(2) the spin coating condition is 1500-spin coating for 10 seconds; spin coating for 10 seconds at 2500 rpm; spin coating at 4000 rpm for 10 seconds;
preferably, the gradient annealing step in the step (3) is performed at 100-.
Preferably, the interface modification layer in the step (4) is trimethyl phenyl ammonium chloride. The method comprises the following specific steps:
(1) dissolving 1mg of trimethyl phenyl ammonium chloride in 1mL of isopropanol solution;
(2) the prepared trimethylphenyl chloride is stirred for 5 hours at normal temperature and the rotating speed of 300rpm according to a solvent;
(3) 40uL of a solution of trimethylphenyl ammonium chloride was spin coated onto the perovskite under spin-coating conditions of 3000 revolutions for 30 s.
Preferably, the hole transport layer in step (5) is Spiro-OMeTAD. The method comprises the following specific steps:
(1) 85.8mg of Spiro-OMeTAD was dissolved in 1mL of chlorobenzene;
(2) dissolving 520mg of lithium bistrifluoromethylsulfonimide salt in 1mL of acetonitrile solution;
(3) TBP solution was added to 39.0. mu.L of Spiro-OMeTAD solution;
(4) adding 23.0. mu.L of the lithium salt solution to the Spiro-OMeTAD solution;
(6) FK-209 was added to 12. mu.L of Spiro-OMeTAD solution;
(7) stirring the mixed solution for 2 hours at normal temperature;
(8) the spin coating condition is 3000 r 30 s;
preferably, the interface modification layer in the step (6) is MoO3The metal electrode is Ag. The method comprises the following specific steps:
(1)MoO3evaporating on the hole transport layer to a thickness of 5 nm;
(2) the thickness of the metal Ag electrode is 100 nm;
in order to solve the above technical problem, another technical solution proposed by the present invention is: CsPbI is prepared in air with relative humidity of 40% -80% by regulating proportion of lead iodide in precursor solution3PerovskiteThe film and the perovskite solar cell prepared by the preparation method of the high-efficiency perovskite solar cell are provided.
In order to solve the above technical problem, another technical solution proposed by the present invention is: the CsPbI is prepared in air with relative humidity of 40% -80% by regulating the proportion of lead iodide in precursor solution3The perovskite thin film and the high-efficiency perovskite solar cell thereof, and the application of the prepared perovskite solar cell in the photoelectric field.
The invention has the beneficial effects that:
(1) previously reported fully inorganic CsPbI3The perovskite thin film is prepared in an inert gas environment or by controlling the relative humidity of air to be less than that of the air<30% of CsPbI prepared in air, however, the CsPbI prepared by the present invention3The perovskite film does not need to control lower air relative humidity, greatly reduces the harsh environmental requirement for preparation, can directly select methylamine acetate ionic solvent to regulate and control the proportion of lead iodide in a precursor under the condition of high humidity (the air relative humidity is 40-80%), and lead iodide with excessive proportion can form MAPbI with methylamine cations in methylamine acetate ionic liquid3The intermediate phase thereby promoting the phase transformation process to prepare CsPbI with excellent energy conversion efficiency3The perovskite solar cell is beneficial to industrialization;
(2) selecting methylamine ion acetate solvent to regulate PbI in high humidity environment with air humidity greater than 70%2Compared with the traditional DMF and DMSO solvents, the perovskite precursor solution is prepared according to the proportion, and the synergy of the methylamine ions acetate and the excessive lead iodide greatly improves the hydrothermal stability of the precursor solution, so that the film can be prepared smoothly under high humidity;
(3) the CsPbI with compact, uniform and large grain size is prepared under the high humidity environment with the air humidity more than 70 percent by adding lead iodide in an excessive proportion3The perovskite thin film of (1).
Drawings
The invention will be further explained with reference to the drawings.
FIG. 1 is a thermogravimetric analysis of a perovskite precursor solution in accordance with the present invention;
FIG. 2 shows the regulation of PbI by using methylamine acetate as a precursor solution solvent in the invention2CsPbI prepared in air in the ratio of (A) to (B)3UV-vis absorption spectrum of the film;
FIG. 3 shows the preparation of large grain size fully inorganic CsPbI prepared in air according to the present invention3SEM images of perovskite thin films;
FIG. 4 shows the total inorganic CsPbI prepared in air according to the present invention3XRD patterns of perovskite thin films;
FIG. 5 is the fully inorganic CsPbI prepared in air according to the present invention3Structural drawing of perovskite solar cell device;
FIG. 6 shows the CsPbI-free samples prepared in the air with relative humidity of 30%, 60% and 80% according to the present invention3J-V plot of perovskite solar cells;
Detailed Description
Example 1
In this example, methylamine acetate ionic liquid was used as CsPbI3The perovskite precursor solution solvent is used for preparing the fully inorganic CsPbI with low defect state density and large grain size by regulating and controlling the proportion of lead iodide3Perovskite thin film and its high-efficient stable perovskite solar cell, in order to fully understand the humidity condition of laboratory of this invention is greater than 70%. The method mainly comprises the following steps:
and step 1) sequentially carrying out ultrasonic treatment on the etched FTO conductive glass in ethanol, ultrapure water, a cleaning agent, ultrapure water and ethanol for 15 minutes respectively. And drying in an oven at 100 ℃ for 30 minutes after drying by nitrogen to obtain a clean FTO substrate.
Step 2) weighing 108.1mg of cesium iodide, 162.2mg of lead iodide and 71.9mg of dimethylamine hydroiodide according to the ratio of 1:1.5:1, dissolving in 1mL of methylamine acetate solvent, and stirring at the temperature of more than 100 ℃ for 2 hours until complete dissolution to prepare a perovskite precursor solution with the concentration of 300 mg/mL.
Step 3) 85.8mg of Spiro-OMeTAD was dissolved in 1mL of chlorobenzene; 520mg of lithium bistrifluoromethylsulfonimide are dissolved in 1mL of acetonitrile solution; adding 39 mu L of TBP solution into the Spiro-OMeTAD solution, and adding 23 mu L of lithium salt solution into the Spiro-OMeTAD solution;
stirring the mixed solution for 2 hours at normal temperature; the spin coating condition is 3000 r 30 s;
step 4) dissolving 1mg of trimethyl phenyl ammonium chloride in 1mL of isopropanol solution, and stirring the solution at the rotating speed of 300 at normal temperature for 5 hours; the spin coating condition is 3000 r 30 s;
and 5) carrying out ultraviolet ozone treatment on the FTO substrate cleaned in the step 1) for 15 minutes.
Step 6) getting electron transmission material SnO2Dripping 45 mu L of the solution on the FTO substrate processed in the step 4), spin-coating the FTO substrate by using a spin coater to form a film, wherein the spin speed is 4000 revolutions for 30 seconds, and then coating SnO on the spin2FTO (g) of (2) for 30 minutes at 150 ℃.
And 7) placing the FTO conductive substrate which is subjected to annealing in the step 6) and is coated with the electron transport layer in a spin coating machine at the substrate temperature of 50-100 ℃ and preheating for 5 minutes.
And 8) dripping 100 mu L of the perovskite precursor solution prepared in the step 2) on the FTO substrate preheated in the step 6), spin-coating to form a film, and then annealing to form the perovskite thin film. The rotation speed of the perovskite precursor solution is 1500-rotation spin for 10 seconds, 2500-rotation spin for 10 seconds, 4000-rotation spin for 10 seconds, gradient annealing in air at 100-160 ℃ for 2-10 minutes and 200-300 ℃ for 2-10 minutes.
Step 9) spin-coating the interface modification material of the trimethyl phenyl ammonium chloride obtained in the step 4) on the perovskite film obtained in the step 8), wherein the spin-coating of the interface modification material of the trimethyl phenyl ammonium chloride is performed for 30 seconds by adopting 3000-spin coating to form a trimethyl phenyl ammonium chloride interface modification layer,
and 10) spin-coating the hole transport material obtained in the step 3) on the perovskite thin film modified by the trimethyl phenyl ammonium chloride obtained in the step 9), and spin-coating the Spiro-OMeTAD for 30 seconds by adopting 3000-turn spin coating to form a hole transport layer.
Step 11) evaporating 5nm MoO on the hole transport layer in the step 10) by adopting a vacuum evaporation technology3And then evaporating 100nm metal electrode Ag to obtain the perovskite solar cell.
Step 12) under standard test conditions (AM 1.5G illumination), the battery devices prepared in this example having the most lead iodide ratio had energy conversion efficiencies of 16.37%, open circuit voltages of 1.10V, and short circuit currents of 20.09mA/cm2The fill factor is 73.79%;
example 2
In this example, methylamine acetate ionic liquid was used as CsPbI3The perovskite precursor solution solvent is used for preparing the fully inorganic CsPbI with low defect state density and large grain size by regulating and controlling the proportion of lead iodide3Perovskite thin film and its high-efficient stable perovskite solar cell, in order to fully understand the humidity condition of laboratory of this invention is greater than 70%. The method mainly comprises the following steps:
and step 1) sequentially carrying out ultrasonic treatment on the etched FTO conductive glass in ethanol, ultrapure water, a cleaning agent, ultrapure water and ethanol for 15 minutes respectively. And drying in an oven at 100 ℃ for 30 minutes after drying by nitrogen to obtain a clean FTO substrate.
Step 2) weighing 108.1mg of cesium iodide, 383.7mg of lead iodide and 71.9mg of dimethylamine hydroiodide according to the ratio of 1:2:1, dissolving in 1mL of methylamine acetate solvent, and stirring at the temperature of more than 100 ℃ for 2 hours until complete dissolution to prepare a perovskite precursor solution with the concentration of 300 mg/mL.
Step 3) 85.8mg of Spiro-OMeTAD was dissolved in 1mL of chlorobenzene; 520mg of lithium bistrifluoromethylsulfonimide are dissolved in 1mL of acetonitrile solution; adding 39 mu L of TBP solution into the Spiro-OMeTAD solution, and adding 23 mu L of lithium salt solution into the Spiro-OMeTAD solution;
stirring the mixed solution for 2 hours at normal temperature; the spin coating condition is 3000 r 30 s;
step 4) dissolving 1mg of trimethyl phenyl ammonium chloride in 1mL of isopropanol solution, and stirring the solution at the rotating speed of 300 at normal temperature for 5 hours; the spin coating condition is 3000 r 30 s;
and 5) carrying out ultraviolet ozone treatment on the FTO substrate cleaned in the step 1) for 15 minutes.
Step 6) getting electron transmission material SnO2Dropping 45 mu L of the solution onto the FTO substrate processed in the step 4) to ensure thatSpin coating with a spin coater at 4000 rpm for 30s to form a film, and coating SnO on the film2FTO (g) of (2) for 30 minutes at 150 ℃.
And 7) placing the FTO conductive substrate which is subjected to annealing in the step 6) and is coated with the electron transport layer in a spin coating machine at the substrate temperature of 50-100 ℃ and preheating for 5 minutes.
And 8) dripping 100 mu L of the perovskite precursor solution prepared in the step 2) on the FTO substrate preheated in the step 6), spin-coating to form a film, and then annealing to form the perovskite thin film. The rotation speed of the perovskite precursor solution is 1500-rotation spin for 10 seconds, 2500-rotation spin for 10 seconds, 4000-rotation spin for 10 seconds, gradient annealing in air at 100-160 ℃ for 2-10 minutes and 200-300 ℃ for 2-10 minutes.
Step 9) spin-coating the interface modification material of the trimethyl phenyl ammonium chloride obtained in the step 4) on the perovskite film obtained in the step 8), wherein the spin-coating of the interface modification material of the trimethyl phenyl ammonium chloride is performed for 30 seconds by adopting 3000-spin coating to form a trimethyl phenyl ammonium chloride interface modification layer,
and 10) spin-coating the hole transport material obtained in the step 3) on the perovskite thin film modified by the trimethyl phenyl ammonium chloride obtained in the step 9), and spin-coating the Spiro-OMeTAD for 30 seconds by adopting 3000-turn spin coating to form a hole transport layer.
Step 11) evaporating 5nm MoO on the hole transport layer in the step 10) by adopting a vacuum evaporation technology3And then evaporating 100nm metal electrode Ag to obtain the perovskite solar cell.
Step 12) under the standard test conditions (AM 1.5G illumination), the performance parameters of the perovskite battery device prepared by the embodiment are respectively that the energy conversion efficiency is 17.43 percent, the open-circuit voltage is 1.14V, and the short-circuit current is 19.78mA/cm2The fill factor is 77.35%;
example 3
In this example, methylamine acetate ionic liquid was used as CsPbI3The perovskite precursor solution solvent is used for preparing the fully inorganic CsPbI with low defect state density and large grain size by regulating and controlling the proportion of lead iodide3Perovskite thin film and its high-efficient stable perovskite solar cell, in order to fully understand the humidity condition of laboratory of this invention is greater than 70%. Mainly comprises the following stepsThe method comprises the following steps:
and step 1) sequentially carrying out ultrasonic treatment on the etched FTO conductive glass in ethanol, ultrapure water, a cleaning agent, ultrapure water and ethanol for 15 minutes respectively. And drying in an oven at 100 ℃ for 30 minutes after drying by nitrogen to obtain a clean FTO substrate.
Step 2) weighing 108.1mg of cesium iodide, 324.3mg of lead iodide and 71.9mg of dimethylamine hydroiodide according to the ratio of 1:3:1, dissolving in 1mL of methylamine acetate solvent, and stirring at the temperature of more than 100 ℃ for 2 hours until complete dissolution to prepare a perovskite precursor solution with the concentration of 300 mg/mL.
Step 3) 85.8mg of Spiro-OMeTAD was dissolved in 1mL of chlorobenzene; 520mg of lithium bistrifluoromethylsulfonimide are dissolved in 1mL of acetonitrile solution; adding 39 mu L of TBP solution into the Spiro-OMeTAD solution, and adding 23 mu L of lithium salt solution into the Spiro-OMeTAD solution;
stirring the mixed solution for 2 hours at normal temperature; the spin coating condition is 3000 r 30 s;
step 4) dissolving 1mg of trimethyl phenyl ammonium chloride in 1mL of isopropanol solution, and stirring the solution at the rotating speed of 300 at normal temperature for 5 hours; the spin coating condition is 3000 r 30 s;
and 5) carrying out ultraviolet ozone treatment on the FTO substrate cleaned in the step 1) for 15 minutes.
Step 6) getting electron transmission material SnO2Dripping 45 mu L of the solution on the FTO substrate processed in the step 4), spin-coating the FTO substrate by using a spin coater to form a film, wherein the spin speed is 4000 revolutions for 30 seconds, and then coating SnO on the spin2FTO (g) of (2) for 30 minutes at 150 ℃.
And 7) placing the FTO conductive substrate which is subjected to annealing in the step 6) and is coated with the electron transport layer in a spin coating machine at the substrate temperature of 50-100 ℃ and preheating for 5 minutes.
And 8) dripping 100 mu L of the perovskite precursor solution prepared in the step 2) on the FTO substrate preheated in the step 6), spin-coating to form a film, and then annealing to form the perovskite thin film. The rotation speed of the perovskite precursor solution is 1500-rotation spin for 10 seconds, 2500-rotation spin for 10 seconds, 4000-rotation spin for 10 seconds, gradient annealing in air at 100-160 ℃ for 2-10 minutes and 200-300 ℃ for 2-10 minutes.
Step 9) spin-coating the interface modification material of the trimethyl phenyl ammonium chloride obtained in the step 4) on the perovskite film obtained in the step 8), wherein the spin-coating of the interface modification material of the trimethyl phenyl ammonium chloride is performed for 30 seconds by adopting 3000-spin coating to form a trimethyl phenyl ammonium chloride interface modification layer,
and 10) spin-coating the hole transport material obtained in the step 3) on the perovskite thin film modified by the trimethyl phenyl ammonium chloride obtained in the step 9), and spin-coating the Spiro-OMeTAD for 30 seconds by adopting 3000-turn spin coating to form a hole transport layer.
Step 11) evaporating 5nm MoO on the hole transport layer in the step 10) by adopting a vacuum evaporation technology3And then evaporating 100nm metal electrode Ag to obtain the perovskite solar cell.
Step 12) under the standard test condition (AM 1.5G illumination), the performance parameters of the perovskite battery device prepared by the embodiment are respectively that the energy conversion efficiency is 17.16%, the open-circuit voltage is 1.13V, and the short-circuit current is 19.99mA/cm2The fill factor is 75.61%;
comparative example 1
The conventional DMF/DMSO solvent is used according to the molar ratio of cesium iodide, lead iodide and dimethylamine hydroiodide of 1:2:1 preparation of CsPbI3The perovskite film needs to be prepared in a vacuum glove box or under the condition of extremely low air humidity (the relative air humidity is less than 30 percent), the grain size of the prepared perovskite film is small, and methylamine acetate ionic liquid is used as CsPbI3The perovskite precursor solution solvent enables lead iodide in the precursor solution solvent and lead iodide in the precursor solution solvent to exert a synergistic effect to prepare the high-efficiency CsPbI in the air with the relative humidity of 40% -80%3The perovskite thin film prepared by the perovskite thin film has a micron-level size and a compact and smooth appearance, and the prepared perovskite device has excellent device efficiency. (see FIGS. 3 and 6.)
Comparative example 2
In an air environment with relative air humidity of more than 70%, methylamine acetate ionic liquid is adopted as a precursor solution, and the proportions of cesium iodide, lead iodide and dimethylamine hydroiodide are respectively 1:1:1, 1:2:1 and 1:the energy conversion efficiencies of 3:1 were 12.39%, 17.43% and 17.16%, respectively, and CsPbI was prepared in a glove box using a conventional DMF/DMSO solvent at the optimal ratio of cesium iodide, lead iodide and dimethylamine hydroiodide of 1:2:13The perovskite solar cell has an efficiency of 11.46%. Therefore, the invention has a synergistic effect with methylamine acetate ionic liquid by regulating and controlling the proportion of excess lead iodide, and the excess lead iodide can promote CsPbI kinetically3Formation of perovskite film to obtain fully inorganic CsPbI with excellent efficiency3A solar cell.
In general, the invention is based on methylamine acetate ionic liquids as CsPbI3The perovskite precursor solution solvent enables lead iodide in the precursor solution solvent and lead iodide in the precursor solution solvent to exert a synergistic effect to prepare the high-efficiency CsPbI in the air with the relative humidity of 40% -80%3The perovskite thin film prepared by the method has micron-level size and compact and smooth appearance, the prepared perovskite device has excellent device efficiency, and the all-inorganic CsPbI prepared by the method3The perovskite solar cell method is simple to operate, high in photoelectric conversion efficiency, free of worrying about influences of the environment in high-humidity air on the perovskite solar cell, and has rare industrial advantages.
The invention is not limited to the specific technical solutions described in the above embodiments, and all technical solutions formed by equivalent substitutions are within the scope of the invention as claimed.
Claims (9)
1. Preparation of CsPbI in high humidity environment3A perovskite thin film and a method for manufacturing the perovskite solar cell with high efficiency are characterized by comprising the following steps:
(1) cesium iodide, dimethylamine hydroiodide and lead iodide are mixed according to the molar ratio of 1:1: X, 1<X<3, dissolving in methylamine acetate solvent to prepare new all-inorganic CsPbI3Heating, stirring and dissolving the perovskite precursor solution at the temperature of more than 100 ℃ for 0.5-3 hours;
(2) spin-coating and depositing an electron transport material on the cleaned and treated FTO transparent conductive glass sheet;
(3) coating the prepared perovskite precursor solution on an FTO conductive substrate with an electron transport layer in air with the relative humidity of 40-80%, and performing gradient annealing at 160-10 minutes at 100-160 ℃ and 2-10 minutes at 300-200 ℃ to obtain a flat and compact perovskite thin film;
(4) spin-coating a trimethyl phenyl chlorination solution interface modification layer on the perovskite layer;
(5) spin coating a hole transport layer on the perovskite layer;
(6) and vacuum evaporating an interface modification layer and a metal electrode on the hole transport layer.
2. The preparation of CsPbI under high humidity environment of claim 13A perovskite thin film and a method for manufacturing the perovskite solar cell with high efficiency are characterized in that: the step (1) CsPbI3The concentration of the perovskite precursor solution is 100-400 mg/mL.
3. The preparation of CsPbI under high humidity environment of claim 13A perovskite thin film and a method for manufacturing the perovskite solar cell with high efficiency are characterized in that: the electronic transmission layer on the transparent conductive FTO glass in the step (2) is SnO2The method comprises the following specific steps:
(1) the spin coating conditions were 4000 spin coating for 30 seconds,
(2) after the spin coating, the substrate was annealed at 150 ℃ for 30 minutes.
4. The preparation of CsPbI under high humidity environment of claim 13A perovskite thin film and a method for manufacturing the perovskite solar cell with high efficiency are characterized in that: the preparation of the film in the step (3) adopts a heating step-by-step spin coating and gradient annealing mode in the air with the relative humidity of 40-80%, and the specific steps are as follows:
(1) the temperature of the substrate is 50-100 ℃;
(2) the spin coating condition is 1500-spin coating for 10 seconds; spin coating for 10 seconds at 2500 rpm; spin coating at 4000 rpm for 10 seconds.
(3) After the spin coating, annealing is carried out at the gradient temperature, wherein the conditions are 100 ℃ and 160 ℃ for 2-10 minutes, and 200 ℃ and 300 ℃ for 2-10 minutes.
5. The preparation of CsPbI under high humidity environment of claim 13The preparation method of the perovskite thin film and the high-efficiency perovskite solar cell thereof is characterized in that: the interface modification layer deposited by spin coating in the step (4) is a PTACl passivation layer; the method comprises the following specific steps:
(1) dissolving 1mg of trimethyl phenyl ammonium chloride in 1mL of isopropanol solution;
(2) stirring the prepared trimethyl phenyl ammonium chloride solvent for 5 hours at normal temperature and the rotating speed of 300 rpm;
(3) taking 40uL of trimethyl phenyl ammonium chloride solution to spin-coat on the perovskite, wherein the spin-coating condition is 3000 r/30 s.
6. The preparation of CsPbI under high humidity environment of claim 13The preparation method of the perovskite thin film and the high-efficiency perovskite solar cell thereof is characterized in that: the hole transport layer deposited by spin coating in the step (5) is Spiro-OMeTAD; the method comprises the following specific steps:
(1) 85.8mg of Spiro-OMeTAD was dissolved in 1mL of chlorobenzene;
(2) 520mg of lithium bistrifluoromethylsulfonimide are dissolved in 1mL of acetonitrile solution.
(3) TBP solution was added to 39.0. mu.L of Spiro-OMeTAD solution;
(4) adding 23.0. mu.L of the lithium salt solution to the Spiro-OMeTAD solution;
(5) FK-209 was added to 12. mu.L of Spiro-OMeTAD solution;
(6) stirring the mixed solution for 2 hours at normal temperature;
(7) the spin coating conditions were 3000 revolutions for 30 s.
7. The preparation of CsPbI under high humidity environment of claim 13The preparation method of the perovskite thin film and the high-efficiency perovskite solar cell thereof is characterized in that: the interface modification layer in the step (6) is MoO3The metal electrode is Ag. Utensil for cleaning buttockThe method comprises the following steps:
(1)MoO3evaporating on the hole transport layer to a thickness of 5 nm;
(2) the thickness of the metal Ag electrode is 100 nm.
8. CsPbI prepared according to any one of claims 1 to 73Perovskite thin film and high-efficient perovskite solar cell thereof.
9. The preparation of CsPbI under high humidity environment of claim 83The perovskite thin film and the application of the high-efficiency perovskite solar cell thereof are applied in the photoelectric field.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114725291A (en) * | 2022-04-11 | 2022-07-08 | 贵州大学 | Preparation method of high-quality stable all-inorganic perovskite solar cell |
| CN114899326A (en) * | 2022-04-12 | 2022-08-12 | 贵州大学 | Method for preparing high-quality inorganic perovskite active layer in air |
| CN114975801A (en) * | 2022-05-26 | 2022-08-30 | 中国科学院合肥物质科学研究院 | Method for improving environmental stability of perovskite solar cell based on crystallization regulation |
| CN114988461A (en) * | 2022-05-09 | 2022-09-02 | 武汉理工大学 | Inorganic CsPbI 3 Perovskite thin film and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114725291A (en) * | 2022-04-11 | 2022-07-08 | 贵州大学 | Preparation method of high-quality stable all-inorganic perovskite solar cell |
| CN114725291B (en) * | 2022-04-11 | 2024-04-19 | 贵州大学 | Preparation method of high-quality stable all-inorganic perovskite solar cell |
| CN114899326A (en) * | 2022-04-12 | 2022-08-12 | 贵州大学 | Method for preparing high-quality inorganic perovskite active layer in air |
| CN114899326B (en) * | 2022-04-12 | 2024-04-12 | 贵州大学 | Method for preparing high-quality inorganic perovskite active layer in air |
| CN114988461A (en) * | 2022-05-09 | 2022-09-02 | 武汉理工大学 | Inorganic CsPbI 3 Perovskite thin film and preparation method thereof |
| CN114975801A (en) * | 2022-05-26 | 2022-08-30 | 中国科学院合肥物质科学研究院 | Method for improving environmental stability of perovskite solar cell based on crystallization regulation |
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