CN114914362A - Preparation method of efficient and stable titanium ore solar cell - Google Patents

Preparation method of efficient and stable titanium ore solar cell Download PDF

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CN114914362A
CN114914362A CN202210590796.5A CN202210590796A CN114914362A CN 114914362 A CN114914362 A CN 114914362A CN 202210590796 A CN202210590796 A CN 202210590796A CN 114914362 A CN114914362 A CN 114914362A
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perovskite
precursor solution
solution
substrate
additive
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习鹤
丁李淞
张春福
朱卫东
陈大正
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Xidian University
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Xidian University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • Y02E10/549—Organic PV cells

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Abstract

The invention relates to a preparation method of a high-efficiency stable titanium ore solar cell. In which the carbonyl group can be insufficiently coordinated with Pb in the perovskite solution 2+ Ion combination or combination with other cations in defect states to form a Lewis complex, thereby passivating the film defects; the fluorine group has stronger hydrophobicity, can improve the stability of the perovskite solar device, and is a transmission channel of effective charges between the perovskite layer and the hole transmission layer(ii) a And the amino group increases C ═ O and Pb 2+ The coordination ability of the compound can reduce the defects on the surface of crystal grains, improve the film forming quality of perovskite, and the combination of amino and iodide can inhibit ion migration and further enhance the passivation effect.

Description

Preparation method of efficient and stable titanium ore solar cell
Technical Field
The invention belongs to the field of perovskite solar cells, and particularly relates to a preparation method of a high-efficiency stable titanium ore solar cell.
Background
With the continuous development of human society, the requirement on energy sources is more and more. Conventional energy sources, such as: petroleum, natural gas, coal and the like belong to non-renewable energy sources. Not only the storage capacity is reduced day by day, but also the environment is polluted greatly. Therefore, the great development of renewable green clean energy is urgent and important. The solar energy is particularly outstanding and inexhaustible, and cannot influence the environment. The application research of the method has been increasingly paid attention.
Since 2009, japanese scientist t.miyasaka et al first produced perovskite solar cells, they received extensive attention from researchers. The photoelectric conversion efficiency of the solar cell has been developed to 25.8% from the first 3.8%, which is enough to see the huge development prospect. In the preparation process of the perovskite solar cell, the perovskite thin film is the perovskite thin film which has relatively influence on the performance of the device, and in the preparation process, the crystallization rate is relatively high, the defects are relatively many, the carrier transmission efficiency is influenced, and the photoelectric conversion efficiency is hindered. And because of the nature of the perovskite, the perovskite is very easily influenced by external factors of water and oxygen, so that the stability of the device is reduced. One good method for solving the problem is to use the additive in the process of preparing the perovskite precursor solution, reduce various defects by utilizing the reaction of the additive and the perovskite material, and improve the photoelectric conversion efficiency and the device stability.
Most of the passivation materials used at present are insulating polymers, which can hinder the extraction of photogenerated carriers by the perovskite light absorption layer. And most of some materials only have a single functional group to act on perovskite to passivate one or two defects, and the absence of hydrophobic groups leads to that the perovskite device is easily influenced by water in the air, so that the service life of the device is shortened.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a preparation method of a high-efficiency stable titanium ore solar cell. The technical problem to be solved by the invention is realized by the following technical scheme:
the invention provides a preparation method of a perovskite thin film, which comprises the following steps:
step 1: preparing a perovskite precursor solution;
step 2: adding a passivation defect additive into the prepared perovskite precursor solution;
and step 3: preparing a perovskite thin film on a substrate by adopting a solution spin-coating method and adding a perovskite precursor solution added with a passivation defect additive;
wherein the small molecular structure of the passivation defect additive comprises carbonyl, amino, benzene ring and fluoro groups.
In one embodiment of the invention, the perovskite precursor solution is ABX 3 The precursor solution of the perovskite material, wherein A is at least one of Cs, MA and FA, B is Pb and/or Sn, and X is at least one of Cl, Br and I.
In one embodiment of the invention, the passivating defect additive is 3, 4-difluorobenzamide or 2, 4-difluorobenzamide.
In one embodiment of the invention, the molar ratio of the added amount of the passivation defect additive to the perovskite precursor solution is 0.1-1.2%.
In one embodiment of the present invention, the step 3 comprises:
step 3.1: a spinning machine is utilized, a solution spinning method is adopted to spin-coat the perovskite precursor solution added with the passivation defect additive on the substrate, and the perovskite wet film is prepared;
step 3.2: and annealing the perovskite wet film to obtain the perovskite thin film.
In one embodiment of the present invention, in step 3.1, the spin coating process parameters are: the rotating speed is 3500r/min, the acceleration is 3000r/min, and the spin coating time is 15-50 s.
In one embodiment of the present invention, in the step 3.2, the annealing process parameters are: the annealing time is 10-30 min, and the annealing temperature is 100-450 ℃.
The invention provides application of the perovskite thin film prepared by the method in any one embodiment in a solar cell.
The invention provides a perovskite solar cell which comprises a substrate, a cathode, an electron transmission layer, a perovskite light absorption layer, a hole transmission layer and an anode which are sequentially stacked from bottom to top, wherein the perovskite light absorption layer comprises a perovskite thin film prepared by the method of any one embodiment.
The invention provides a preparation method of a perovskite solar cell, which comprises the following steps:
s1: cleaning the ITO-coated substrate by using a Decon-90 deionized water solution, alcohol and deionized water in sequence for 15min, blow-drying by a nitrogen gun, and then pre-treating in ultraviolet ozone;
s2: the prepared SnO 2 Or TiO 2 The precursor solution is coated on the pretreated ITO substrate in a spinning way, and is placed on a heating table to be annealed for 10-30 min at the temperature of 100-450 ℃ to form an electron transmission layer;
s3: adding a passivation defect additive into the prepared perovskite precursor solution, performing spin coating on the perovskite precursor solution added with the passivation defect additive on an electron transport layer by adopting a solution spin coating method to obtain a perovskite wet film, and then putting the prepared substrate on a heating table for annealing treatment to form a perovskite light absorption layer; wherein the content of the first and second substances,
the spin coating process parameters are as follows: the rotating speed is 3500r/min, the acceleration is 3000r/min, and the spin coating time is 15-50 s; the annealing treatment process parameters are as follows: the annealing time is 10-30 min, and the annealing temperature is 100-450 ℃;
s4: depositing a hole transport layer on the perovskite light absorption layer;
s5: evaporating a metal anode of the solar cell on the hole transport layer by using a vacuum coating instrument to obtain a perovskite solar cell;
wherein the small molecular structure of the passivation defect additive comprises carbonyl, amino, benzene ring and fluorine group;
the perovskite precursor solution is ABX 3 The precursor solution of the perovskite material, wherein A is at least one of Cs, MA and FA, B is Pb and/or Sn, and X is at least one of Cl, Br and I.
Compared with the prior art, the invention has the beneficial effects that:
1. the preparation method of the perovskite thin film comprises the step of adding a passivation defect additive into a perovskite precursor solution, wherein the small molecular structure of the passivation defect additive comprises carbonyl, amino, benzene ring and fluorine group, and the carbonyl can be insufficiently coordinated with Pb in the perovskite solution 2+ Ion combination or combination with other cations in defect state to form Lewis complex, thereby passivating the film defect. Fluorine groups in molecules have stronger hydrophobicity, can improve the stability of the perovskite solar device, and are transmission channels of effective charges between the perovskite light absorption layer and the hole transmission layer. And wherein the amino group is increased by C ═ O and Pb 2+ The coordination ability of the compound can reduce the defects on the surface of crystal grains, improve the film forming quality of perovskite, and the combination of amino and iodide can inhibit ion migration and further enhance the passivation effect.
2. According to the preparation method of the perovskite solar cell, disclosed by the invention, the comprehensive action of various functional groups in the passivation defect additive material is utilized in the preparation process of the perovskite light absorption layer, so that the defect can be passivated more efficiently, and the photoelectric conversion efficiency and the stability of the solar cell are obviously improved.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic diagram of a method for preparing a perovskite thin film according to an embodiment of the present invention;
FIG. 2 is a molecular structural diagram of a material for passivating defect additives provided by an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a perovskite solar cell provided by an embodiment of the invention;
fig. 4 is a flow chart of a process for preparing a perovskite solar cell according to an embodiment of the invention.
Detailed Description
In order to further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description will be made on a method for manufacturing a high-efficiency stable titanium ore solar cell according to the present invention with reference to the accompanying drawings and the detailed embodiments.
The foregoing and other technical matters, features and effects of the present invention will be apparent from the following detailed description of the embodiments, which is to be read in connection with the accompanying drawings. The technical means and effects of the present invention adopted to achieve the predetermined purpose can be more deeply and specifically understood through the description of the specific embodiments, however, the attached drawings are provided for reference and description only and are not used for limiting the technical scheme of the present invention.
Examples
Referring to fig. 1, fig. 1 is a schematic view of a method for preparing a perovskite thin film according to an embodiment of the present invention, and as shown in the figure, the method for preparing a perovskite thin film according to the embodiment includes:
step 1: preparing a perovskite precursor solution;
in this embodiment, the perovskite precursor solution is ABX 3 The precursor solution of the perovskite material, wherein A is at least one of Cs, MA and FA, B is Pb and/or Sn, and X is at least one of Cl, Br and I.
Alternatively, the perovskite precursor solution may be MAPbI 3 Precursor solution of (1), MAPbBr 3 Precursor solution of (1), MAPbCl 3 Precursor solution of (2), MAPbI 3-x Br x Precursor solution of x ═ 0-3, MAPbI 3-x Cl x Precursor solution of, x ═ 0 to 3, FA y MA 1-y PbI 3-x Cl x A precursor solution of 0-3 or 0-1, or FA y MA 1-y PbI 3-x Br x X is 0-3, and y is 0-1.
Specifically, the precursor material of the perovskite film is dissolved in an organic solvent such as DMF, IPA, NMP or a mixture thereof in a desired stoichiometric amount to obtain a corresponding precursor solution.
Step 2: adding a passivation defect additive into the prepared perovskite precursor solution;
wherein the small molecular structure of the passivation defect additive comprises carbonyl, amino, benzene ring and fluorine group.
Alternatively, the passivation defect additive is added as 3, 4-difluorobenzamide or 2, 4-difluorobenzamide. The molecular structure diagram of the material for passivating defect additives is shown in fig. 2, wherein (a) is shown as 3, 4-difluorobenzamide, and (b) is shown as 2, 4-difluorobenzamide.
In this embodiment, the molar ratio of the added amount of the passivation defect additive to the perovskite precursor solution is 0.1% to 1.2%.
And step 3: preparing a perovskite thin film on a substrate by adopting a solution spin-coating method and adding a perovskite precursor solution added with a passivation defect additive;
specifically, step 3 includes:
step 3.1: a spinning machine is utilized, a solution spinning method is adopted to spin-coat the perovskite precursor solution added with the passivation defect additive on the substrate, and the perovskite wet film is prepared;
specifically, the spin coating process parameters are as follows: the rotating speed is 3500r/min, the acceleration is 3000r/min, and the spin coating time is 15-50 s.
Optionally, the substrate is glass.
Step 3.2: and annealing the perovskite wet film to obtain the perovskite thin film.
Specifically, the annealing treatment process parameters are as follows: the annealing time is 10-30 min, and the annealing temperature is 100-450 ℃.
In the preparation method of the perovskite thin film of the embodiment, the passivation defect additive is added into the perovskite precursor solution, and the small molecular structure of the passivation defect additive comprises carbonyl and aminoBenzene ring and fluorine group, passivating carbonyl group in defect additive material and Pb in perovskite solution with insufficient coordination 2+ Ion combination or combination with other cations in defect state to form Lewis complex, thereby passivating the film defect. The fluorine group has stronger hydrophobicity, can improve the stability of the perovskite solar device, and is a transmission channel of effective charges between the perovskite light absorption layer and the hole transmission layer. And the amino group increases C ═ O and Pb 2+ The coordination ability of the compound can reduce the defects on the surface of crystal grains, improve the film forming quality of perovskite, and the combination of amino and iodide can inhibit ion migration and further enhance the passivation effect.
Further, this embodiment also provides a perovskite solar cell, please refer to fig. 3 in combination, fig. 3 is a schematic structural diagram of the perovskite solar cell provided in this embodiment of the present invention, as shown in the figure, the perovskite solar cell includes a substrate 1, a cathode 2, an electron transport layer 3, a perovskite light absorption layer 4, a hole transport layer 5, and an anode 6, which are sequentially stacked from bottom to top.
In the present embodiment, the substrate 1 is made of any one of glass and quartz, and functions to allow incident light to enter into the device, and optionally, the thickness of the substrate 1 is 1.9 mm. The cathode 2 is an ITO substrate and is used for collecting electrons excited by the perovskite light absorption layer. The electron transport layer 3 is SnO 2 Or TiO 2 The electron transport layer can effectively play a role in transporting electrons and blocking holes.
Further, the perovskite light absorption layer 4 is a perovskite thin film, and the material of the perovskite thin film is ABX 3 The perovskite material comprises a material A, a material B and a material X, wherein the material A is at least one of Cs, MA and FA, the material B is Pb and/or Sn, and the material X is at least one of Cl, Br and I.
Alternatively, the perovskite thin film may be made of MAPbI 3 、MAPbBr 3 、MAPbCl 3 、MAPbI 3-x Br x 、MAPbI 3-x Cl x 、FA y MA 1-y PbI 3-x Cl x Or FA y MA 1-y PbI 3-x Br x The perovskite thin film is prepared by the method of the embodimentAnd (4) obtaining the final product. The perovskite light absorption layer 4 can absorb incident light and convert light energy into electric energy, and optionally, the thickness of the perovskite light absorption layer 4 is 180-310 nm.
Further, the hole transport layer 5 adopts a Spiro-OMeTAD hole transport material, and the hole transport layer 5 can extract effective charges and block electrons; the anode 6 is any one of silver, aluminum, magnesium, copper and gold with the thickness of 60-200 nm, and the anode 6 is used for collecting holes.
The embodiment also provides a preparation method of the perovskite solar cell, which comprises the following steps:
s1: cleaning the ITO-coated substrate by using a Decon-90 deionized water solution, alcohol and deionized water in sequence for 15min, blow-drying by a nitrogen gun, and then pre-treating in ultraviolet ozone;
s2: the prepared SnO 2 Or TiO 2 The precursor solution is coated on the pretreated ITO substrate in a spinning way, and is placed in a heating table to be annealed for 10-30 min at the temperature of 100-450 ℃ to form an electron transport layer;
s3: adding a passivation defect additive into the prepared perovskite precursor solution, performing spin coating on the perovskite precursor solution added with the passivation defect additive on an electron transport layer by adopting a solution spin coating method to obtain a perovskite wet film, and then putting the prepared substrate on a heating table for annealing treatment to form a perovskite light absorption layer; wherein the content of the first and second substances,
the spin coating process parameters are as follows: the rotating speed is 3500r/min, the acceleration is 3000r/min, and the spin coating time is 15-50 s; the annealing treatment process parameters are as follows: the annealing time is 10-30 min, and the annealing temperature is 100-450 ℃;
s4: depositing a hole transport layer on the perovskite light absorption layer;
s5: and (3) evaporating and plating a metal anode of the solar cell on the hole transport layer by using a vacuum coating instrument to obtain the perovskite solar cell.
In this example, the small molecule structure of the passivation defect additive includes carbonyl, amino, benzene ring, and fluoro groups. Alternatively, the passivation defect additive is 3, 4-difluorobenzamide or 2, 4-difluorobenzamide. The mol ratio of the addition amount of the passivation defect additive to the perovskite precursor solution is 0.1-1.2%.
In this embodiment, the perovskite precursor solution is ABX 3 The precursor solution of the perovskite material, wherein A is at least one of Cs, MA and FA, B is Pb and/or Sn, and X is at least one of Cl, Br and I.
Alternatively, the perovskite precursor solution may be MAPbI 3 Precursor solution of (1), MAPbBr 3 Precursor solution of (1), MAPbCl 3 Precursor solution of (2), MAPbI 3-x Br x Precursor solution of x ═ 0-3, MAPbI 3-x Cl x Precursor solution of, x ═ 0 to 3, FA y MA 1-y PbI 3-x Cl x A precursor solution of 0-3 or 0-1, or FA y MA 1-y PbI 3-x Br x X is 0-3, and y is 0-1.
According to the perovskite solar cell preparation method, the comprehensive effect of various functional groups in the passivation defect additive material is utilized in the perovskite light absorption layer preparation process, so that defects can be passivated more efficiently, and the photoelectric conversion efficiency and stability of the solar cell are improved remarkably.
Further, referring to fig. 4, fig. 4 is a flow chart of a process for manufacturing a perovskite solar cell according to an embodiment of the present invention, and the effect of the perovskite solar cell manufactured according to the embodiment is described with reference to the specific embodiment.
Example 1
MAPbI preparation with 0.1% mole ratio of 3, 4-difluorobenzamide additive 3 Perovskite solar cell.
The method comprises the following steps: and cleaning the ITO/glass substrate.
Pouring a proper amount of deionized water, adding a small amount of Decon-90, and ultrasonically cleaning the ITO-coated glass substrate for 15 min; then ultrasonically cleaning the substrate for 15min by using de-alcohol and de-ionized water in sequence, drying the substrate by using a nitrogen gun after cleaning, and then pre-treating the substrate in Ozone (UV-Ozone) for 30 min.
Step two, depositing TiO on the pretreated substrate 2 Electron transport layer。
2a) Preparation of TiO 2 Precursor solution;
suck 550. mu.L of TiCl with pipette gun 4 Putting the mixture into a beaker, adding deionized water till the volume is 200mL, and stirring and mixing the two uniformly.
2b) Spin coating TiO 2 Precursor solution;
putting the cleaned ITO/glass substrate into the prepared TiO 2 Sealing the cup mouth in the precursor solution, placing in a baking oven, and baking at 70 deg.C for 30 min. And taking out the substrate, cleaning the substrate by using deionized water, sucking the water on the back, putting the substrate on a spin coater at the rotating speed of 3000r/min for 30s, and then putting the substrate on a heating table for annealing at the temperature of 100 ℃ for 30 min.
Step three, preparing MAPbI 3 A perovskite light absorbing layer.
3a) Preparation of MAPbI 3 Precursor solution of titanium ore;
1033mg of MAI and 2996mg of PbI were weighed respectively 2 Dissolving the perovskite precursor solution in 5mL of mixed solution of DMSO and GBL with the volume solution ratio of 3:7 to obtain a perovskite precursor solution, dissolving a3, 4-difluorobenzamide additive with the molar ratio of 0.1% in the prepared perovskite precursor solution, and heating and stirring the solution on a magnetic heating table at 75 ℃ for 1 h.
3b) Spin coating MAPbI 3 A perovskite light-absorbing layer;
in a nitrogen-filled glove box, 75 μ L of the perovskite solution was sucked up with a pipette and evenly applied dropwise to TiO 2 On the electron transport layer, a rotation speed was set to 3500r/min, an acceleration was set to 3000r/min, and a time was set to 45s, and 350. mu.L of toluene was dropped at 45s, and then placed on a heating stage for annealing at a temperature of 120 ℃ for 30 min.
And step four, spin-coating a Spiro-OMeTAD hole transport layer on the annealed perovskite light absorption layer.
4a) Preparing a precursor solution of Spiro-OMeTAD;
first, 90mg of Spiro powder was weighed, dissolved in 1mL of chlorobenzene solution in a glove box filled with nitrogen, and then 75 μ L of cobalt salt solution, 45 μ L of lithium salt solution, and 10 μ L of TBP were added in this order with a pipette, placed on a magnetically heated stirring table, and stirred at normal temperature until dissolved.
4b) Spin coating a Spiro-OMeTAD solution;
spin-coating the prepared precursor solution of the Spiro-OMeTAD on a perovskite light absorption layer by a spin coater, sucking 75 mu L of solution by a liquid transfer gun, and setting a two-step spin coating mode, wherein the first step is at a rotating speed of 1000r/min, the acceleration is 1000r/min, the time is 5s, the second step is at a rotating speed of 4000r/min, the acceleration is 4000r/min, and the time is 45 s.
And step five, preparing the top electrode.
Putting the prepared substrate into a vacuum coating instrument for evaporating an Ag electrode, wherein the vacuum degree is 1 multiplied by 10 -5 Pa, current 50A, completing MAPbI 3 The perovskite solar cell was prepared and is designated as a 1.
And step six, testing and characterizing the device.
The prepared perovskite solar cell A1 is subjected to a photoelectric response test under the AM 1.5G solar spectrum.
And (3) testing results: effective area of 7mm 2 The energy conversion efficiency reaches 23.9 percent, the open-circuit voltage is 1.20V, and the short-circuit current density is 25.6mA/cm 2 The fill factor was 77.8%.
Example 2
Preparation of MAPbI with a 0.4 mol% 3, 4-difluorobenzamide additive 3 Perovskite solar cell.
The method comprises the following steps: and cleaning the ITO/glass substrate.
Pouring a proper amount of deionized water, adding a small amount of Decon-90, and ultrasonically cleaning the ITO-coated glass substrate for 15 min; then ultrasonically cleaning the substrate for 15min by using de-alcohol and de-ionized water in sequence, drying the substrate by using a nitrogen gun after cleaning, and then pre-treating the substrate in Ozone (UV-Ozone) for 30 min.
Depositing SnO on the pretreated substrate 2 An electron transport layer.
2a) Preparation of SnO 2 Precursor solution;
draw 2mL of deionized water with a pipette and then pipetteDraw 1mL SnO with liquid gun 2 And (4) stirring and mixing the solution and the solution uniformly.
2b) Spin-coated SnO 2 Precursor solution;
prepared SnO is spin-coated on cleaned ITO/glass substrate 2 The spin coating speed of the precursor solution is 3500r/min, the spin coating time is 30s, and then the precursor solution is annealed for 30min on a heating table at the temperature of 150 ℃ to form SnO with the thickness of 90 nm-100 nm 2 An electron transport layer.
Step three, preparing MAPbI 3 A perovskite light absorbing layer.
3a) Preparation of MAPbI 3 Precursor solution of titanium ore;
953mg of CH was weighed on an electronic balance 3 NH 3 I is dissolved in 5mL of mixed solvent with volume ratio of dimethyl sulfoxide to gamma-butyrolactone being 3:7, and the mixture is placed on a magnetic stirring table to be stirred at room temperature until the mixture is completely dissolved, so as to obtain 1.2M/L CH 3 NH 3 I, solution;
then 2212mg of PbI are taken 2 To 4mL of the above CH was added 3 NH 3 Stirring the solution I at 90 ℃ for 4 hours to completely dissolve the solution I to obtain CH with the concentration of 1.2M/L 3 NH 3 PbI 3 (MAPbI 3 ) A solution; then 3, 4-difluorobenzamide additive with the molar ratio of 0.4 percent is dissolved in the prepared perovskite precursor solution, and the solution is placed on a magnetic heating table to be heated and stirred for 1h at the temperature of 75 ℃.
3b) Spin coating MAPbI 3 A perovskite light-absorbing layer;
in a nitrogen atmosphere, in SnO 2 Spin-coating perovskite precursor solution on the electron transport layer, setting the rotation speed at 5000r/min and the time at 60s, and annealing on a hot bench at the temperature of 100 ℃ for 10min to obtain MAPbI 3 A perovskite light absorbing layer.
And step four, spin-coating a Spiro-OMeTAD hole transport layer on the annealed perovskite light absorption layer.
4a) Preparing a precursor solution of Spiro-OMeTAD;
first, 90mg of Spiro powder was weighed, dissolved in 1mL of chlorobenzene solution in a glove box filled with nitrogen, and then 75 μ L of cobalt salt solution, 45 μ L of lithium salt solution, and 10 μ L of TBP were added in this order with a pipette, placed on a magnetically heated stirring table, and stirred at normal temperature until dissolved.
4b) Spin coating a Spiro-OMeTAD solution;
spin-coating the prepared precursor solution of the Spiro-OMeTAD on a perovskite light absorption layer by a spin coater, sucking 75 mu L of solution by a liquid transfer gun, and setting a two-step spin coating mode, wherein the first step is at a rotating speed of 1000r/min, the acceleration is 1000r/min, the time is 5s, the second step is at a rotating speed of 4000r/min, the acceleration is 4000r/min, and the time is 45 s.
And step five, preparing the top electrode.
Putting the prepared substrate into a vacuum coating instrument to evaporate an Ag electrode to finish MAPbI 3 The perovskite solar cell was prepared and is designated as a 2.
And step six, testing and characterizing the device.
The prepared perovskite solar cell A2 is subjected to a photoelectric response test under the AM 1.5G solar spectrum.
And (3) testing results: effective area of 7mm 2 The energy conversion efficiency reaches 24.9 percent, the open-circuit voltage is 1.22V, and the short-circuit current density is 25.6mA/cm 2 The fill factor was 79.8%.
Example 3
MAPbI preparation with 0.8% mole ratio of 3, 4-difluorobenzamide additive 3-x Cl x And x is 0.5 perovskite solar cell.
The method comprises the following steps: and cleaning the ITO/glass substrate.
Pouring a proper amount of deionized water, adding a small amount of Decon-90, and ultrasonically cleaning the ITO-coated glass substrate for 15 min; then ultrasonically cleaning the substrate for 15min by using de-alcohol and de-ionized water in sequence, drying the substrate by using a nitrogen gun after cleaning, and then pre-treating the substrate in Ozone (UV-Ozone) for 30 min.
Depositing SnO on the pretreated substrate 2 An electron transport layer.
2a) Preparation of SnO 2 Precursor solution;
draw 2mL of deionized water with a pipette and then 1mL of SnO with a pipette 2 And (4) stirring and mixing the solution and the solution uniformly.
2b) Spin-coated SnO 2 Precursor solution;
prepared SnO is spin-coated on cleaned ITO/glass substrate 2 The spin coating speed of the precursor solution is 3500r/min, the spin coating time is 30s, and then the precursor solution is annealed for 30min on a heating table at the temperature of 150 ℃ to form SnO with the thickness of 90 nm-100 nm 2 An electron transport layer.
Step three, preparing MAPbI 3-x Cl x A perovskite light absorbing layer.
3a) Preparation of MAPbI 3-x Cl x Precursor solution of titanium ore;
1072mg MAI and 2904mg PbI were weighed with an electronic balance 2 And 194.7mg of PbCl 2 Dissolving in 5mL of mixed solvent with volume ratio of dimethyl sulfoxide to gamma-butyrolactone being 3:7, heating and stirring the obtained solution at 70 ℃ until complete dissolution is achieved, and obtaining 1.35mol/L MAPbI 3-x Cl x And (3) solution. Then 3, 4-difluorobenzamide additive with the molar ratio of 0.8 percent is dissolved in the prepared perovskite precursor solution, and the solution is placed on a magnetic heating table to be heated and stirred for 1h at the temperature of 75 ℃.
3b) Spin coating MAPbI 3-x Cl x A perovskite light-absorbing layer;
in SnO under a glove box filled with nitrogen 2 Spin coating MAPbI on electron transport layer 3-x Cl x And (3) solution. Spin-coating at 1500r/min for 15s, then accelerating to 4500r/min, then spin-coating for 45s, and rapidly dripping 310 μ L of toluene when the total spin-coating time is 40 s; finally, the prepared substrate is placed on a hot bench with the temperature of 100 ℃ for annealing for 15min to form MAPbI with the thickness of 200nm 3-x Cl x A perovskite light absorbing layer.
Step four, depositing NiO on the annealed perovskite light absorption layer x A hole transport layer.
4a) Preparation of NiO x Precursor solution;
270.79mg of Ni (NO) are first weighed out 3 ) 2 ·6H 2 O was dissolved in 10mL of a 2-methoxyethanol solution, which was then placed on a heating table at 50 ℃ with stirringAfter 1h, 100. mu.L of acetylacetone solution was added, followed by further stirring at room temperature for 12 h.
4b) Spin-coated NiO x Precursor solution;
NiO produced x And spin-coating the precursor solution on the perovskite light absorption layer by using a spin coater, and sucking 75 mu L of solution by using a liquid-transferring gun, wherein the rotation speed during spin coating is 4000r/min, and the spin coating time is 45 s.
And step five, preparing the top electrode.
Putting the prepared substrate into a vacuum coating instrument to evaporate an Ag electrode to finish MAPbI 3-x Cl x The perovskite solar cell was prepared and is designated as a 3.
And step six, testing and characterizing the device.
The prepared perovskite solar cell A3 is subjected to a photoelectric response test under the AM 1.5G solar spectrum.
And (3) testing results: effective area of 7mm 2 The energy conversion efficiency reaches 23.4 percent, the open-circuit voltage is 1.18V, and the short-circuit current density is 25.2mA/cm 2 The fill factor was 78.8%.
Example 4
MAPbI preparation with 1.2% mole ratio of 3, 4-difluorobenzamide additive 3-x Cl x And x is 0.5 perovskite solar cell.
The method comprises the following steps: and cleaning the ITO/glass substrate.
Pouring a proper amount of deionized water, and adding a small amount of Decon-90 to ultrasonically clean the ITO-coated glass substrate for 15 min; then ultrasonically cleaning the substrate for 15min by using de-alcohol and de-ionized water in sequence, drying the substrate by using a nitrogen gun after cleaning, and then pre-treating the substrate in Ozone (UV-Ozone) for 30 min.
Depositing SnO on the pretreated substrate 2 An electron transport layer.
2a) Preparation of SnO 2 Precursor solution;
draw 2mL of deionized water with a pipette and then 1mL of SnO with a pipette 2 And (4) stirring and mixing the solution and the solution uniformly.
2b) Spin-coated SnO 2 Precursor solution;
prepared SnO is spin-coated on cleaned ITO/glass substrate 2 The spin coating speed of the precursor solution is 3500r/min, the spin coating time is 30s, and then the precursor solution is annealed for 30min on a heating table at the temperature of 150 ℃ to form SnO with the thickness of 90 nm-100 nm 2 An electron transport layer.
Step three, preparing MAPbI 3-x Cl x A perovskite light absorbing layer.
3a) Preparation of MAPbI 3-x Cl x Precursor solution of titanium ore;
1072mg MAI and 2904mg PbI were weighed with an electronic balance 2 And 194.7mg of PbCl 2 Dissolving in 5mL of mixed solvent with volume ratio of dimethyl sulfoxide to gamma-butyrolactone being 3:7, heating and stirring the obtained solution at 70 ℃ until complete dissolution is achieved, and obtaining 1.35mol/L MAPbI 3-x Cl x And (3) solution. Then 3, 4-difluorobenzamide additive with the molar ratio of 1.2 percent is dissolved in the prepared perovskite precursor solution, and the solution is placed on a magnetic heating table to be heated and stirred for 1 hour at the temperature of 75 ℃.
3b) Spin coating MAPbI 3-x Cl x A perovskite light-absorbing layer;
under a nitrogen-filled glove box, in SnO 2 Electron transport layer spin coating MAPbI 3-x Cl x And (3) solution. Spin-coating at 1500r/min for 15s, then accelerating to 4500r/min, then spin-coating for 45s, and rapidly dripping 310 μ L of toluene when the total spin-coating time is 40 s; finally, the prepared substrate is placed on a hot bench with the temperature of 100 ℃ for annealing for 15min to form MAPbI with the thickness of 200nm 3-x Cl x A perovskite light absorbing layer.
Step four, depositing NiO on the annealed perovskite light absorption layer x A hole transport layer.
4a) Preparation of NiO x Precursor solution;
270.79mg of Ni (NO) are first weighed out 3 ) 2 ·6H 2 O was dissolved in 10mL of a 2-methoxyethanol solution, and the solution was then placed on a heating table with the temperature set at 50 ℃ and stirred for 1h, after which 1h 100. mu.L of an acetylacetone solution was added, and then further stirred at room temperature for 12 h.
4b) Spin coatingNiO x Precursor solution;
NiO produced x And spin-coating the precursor solution on the perovskite light absorption layer by using a spin coater, and sucking 75 mu L of solution by using a liquid-transferring gun, wherein the rotation speed during spin coating is 4000r/min, and the spin coating time is 45 s.
And step five, preparing the top electrode.
Putting the prepared substrate into a vacuum coating instrument to evaporate an Ag electrode to finish MAPbI 3-x Cl x The perovskite solar cell was prepared and is designated as a 4.
And step six, testing and characterizing the device.
The prepared perovskite solar cell A4 is subjected to a photoelectric response test under the AM 1.5G solar spectrum.
And (3) testing results: effective area of 7mm 2 The energy conversion efficiency reaches 23.6 percent, the open-circuit voltage is 1.19V, and the short-circuit current density is 25.1mA/cm 2 The fill factor was 78.9%.
Example 5
MAPbI preparation with 0.1% mole ratio of 2, 4-difluorobenzamide additive 3-x Cl x And x is 0.5 perovskite solar cell.
The method comprises the following steps: and cleaning the ITO/glass substrate.
Pouring a proper amount of deionized water, and adding a small amount of Decon-90 to ultrasonically clean the ITO-coated glass substrate for 15 min; then ultrasonically cleaning the substrate for 15min by using de-alcohol and de-ionized water in sequence, drying the substrate by using a nitrogen gun after cleaning, and then pre-treating the substrate in Ozone (UV-Ozone) for 30 min.
Depositing SnO on the pretreated substrate 2 An electron transport layer.
2a) Preparation of SnO 2 Precursor solution;
draw 2mL of deionized water with a pipette and then 1mL of SnO with a pipette 2 And (4) stirring and mixing the solution and the solution uniformly.
2b) Spin-coated SnO 2 Precursor solution;
prepared SnO is spin-coated on cleaned ITO/glass substrate 2 Precursor solution, spin-coating speed3500r/min, the spin coating time is 30s, and then annealing is carried out for 30min on a heating table with the temperature of 150 ℃ to form SnO with the thickness of 90 nm-100 nm 2 An electron transport layer.
Step three, preparing MAPbI 3-x Cl x A perovskite light absorbing layer.
3a) Preparation of MAPbI 3-x Cl x Precursor solution of titanium ore;
1072mg MAI and 2904mg PbI were weighed with an electronic balance 2 And 194.7mg of PbCl 2 Dissolving in 5mL of mixed solvent with volume ratio of dimethyl sulfoxide to gamma-butyrolactone being 3:7, heating and stirring the obtained solution at 70 ℃ until complete dissolution is achieved, and obtaining 1.35mol/L MAPbI 3-x Cl x And (3) solution. Then 2, 4-difluorobenzamide additive with the molar ratio of 0.1 percent is dissolved in the prepared perovskite precursor solution, and the solution is placed on a magnetic heating table to be heated and stirred for 1 hour at the temperature of 75 ℃.
3b) Spin coating MAPbI 3-x Cl x A perovskite light-absorbing layer;
under a nitrogen-filled glove box, in SnO 2 Spin coating MAPbI on electron transport layer 3-x Cl x And (3) solution. Spin-coating at 1500r/min for 15s, then accelerating to 4500r/min, then spin-coating for 45s, and rapidly dripping 310 μ L of toluene when the total spin-coating time is 40 s; finally, the prepared substrate is placed on a hot bench with the temperature of 100 ℃ for annealing for 15min to form MAPbI with the thickness of 200nm 3-x Cl x A perovskite light absorbing layer.
Step four, depositing NiO on the annealed perovskite light absorption layer x A hole transport layer.
4a) Preparation of NiO x Precursor solution;
270.79mg of Ni (NO) are first weighed out 3 ) 2 ·6H 2 O was dissolved in 10mL of a 2-methoxyethanol solution, and the solution was then placed on a heating table, the temperature was set at 50 ℃ and stirred for 1h, after which 1h 100. mu.L of an acetylacetone solution was added and further stirred at room temperature for 12 h.
4b) Spin-coated NiO x Precursor solution;
NiO produced x Precursor solution by spin coatingSpin-coating on the perovskite light absorption layer, sucking 75 mu L of solution by using a liquid transfer gun, wherein the rotation speed during spin-coating is 4000r/min, and the spin-coating time is 45 s.
And step five, preparing the top electrode.
Putting the prepared substrate into a vacuum coating instrument to evaporate an Ag electrode to finish MAPbI 3-x Cl x The perovskite solar cell was prepared and is designated as a 5.
And step six, testing and characterizing the device.
The prepared perovskite solar cell A5 is subjected to a photoelectric response test under the AM 1.5G solar spectrum.
And (3) testing results: effective area of 7mm 2 The energy conversion efficiency reaches 24.1 percent, the open-circuit voltage is 1.19V, and the short-circuit current density is 25.6mA/cm 2 The fill factor was 79.1%.
Example 6
MAPbI preparation with 1.2% mole ratio of 2, 4-difluorobenzamide additive 3-x Cl x And x is 0.5 perovskite solar cell.
The method comprises the following steps: and cleaning the ITO/glass substrate.
Pouring a proper amount of deionized water, adding a small amount of Decon-90, and ultrasonically cleaning the ITO-coated glass substrate for 15 min; then ultrasonically cleaning the substrate for 15min by using the dealcoholized water and the deionized water in sequence, drying the substrate by using a nitrogen gun after cleaning, and then pre-treating the substrate in Ozone (UV-Ozone) for 30 min.
Depositing SnO on the pretreated substrate 2 An electron transport layer.
2a) Preparation of SnO 2 Precursor solution;
draw 2mL of deionized water with a pipette and then 1mL of SnO with a pipette 2 And (4) stirring and mixing the solution and the solution uniformly.
2b) Spin-coated SnO 2 Precursor solution;
prepared SnO is spin-coated on cleaned ITO/glass substrate 2 The spin coating speed of the precursor solution is 3500r/min, the spin coating time is 30s, and then the precursor solution is annealed for 30min on a heating table at the temperature of 150 ℃ to form SnO with the thickness of 90 nm-100 nm 2 An electron transport layer.
Step three, preparing MAPbI 3-x Cl x A perovskite light absorbing layer.
3a) Preparation of MAPbI 3-x Cl x Precursor solution of titanium ore;
1072mg MAI and 2904mg PbI are weighed by an electronic balance 2 And 194.7mg of PbCl 2 Dissolving in 5mL of mixed solvent with volume ratio of dimethyl sulfoxide to gamma-butyrolactone of 3:7, heating and stirring the obtained solution at 70 ℃ until complete dissolution is achieved, and obtaining MAPbI of 1.35mol/L 3-x Cl x And (3) solution. Then 2, 4-difluorobenzamide additive with the molar ratio of 1.2 percent is dissolved in the prepared perovskite precursor solution, and the solution is placed on a magnetic heating table to be heated and stirred for 1 hour at the temperature of 75 ℃.
3b) Spin coating MAPbI 3-x Cl x A perovskite light-absorbing layer;
under a nitrogen-filled glove box, in SnO 2 Electron transport layer spin coating MAPbI 3-x Cl x And (3) solution. Spin-coating at 1500r/min for 15s, then accelerating to 4500r/min, then spin-coating for 45s, and rapidly dripping 310 μ L of toluene when the total spin-coating time is 40 s; finally, the prepared substrate is placed on a hot bench with the temperature of 100 ℃ for annealing for 15min to form MAPbI with the thickness of 200nm 3-x Cl x A perovskite light absorbing layer.
Step four, depositing NiO on the annealed perovskite light absorption layer x A hole transport layer.
4a) Preparation of NiO x Precursor solution;
270.79mg of Ni (NO) are first weighed out 3 ) 2 ·6H 2 O was dissolved in 10mL of a 2-methoxyethanol solution, and the solution was then placed on a heating table, the temperature was set at 50 ℃ and stirred for 1h, after which 1h 100. mu.L of an acetylacetone solution was added and further stirred at room temperature for 12 h.
4b) Spin-coated NiO x Precursor solution;
NiO produced x Spin-coating the precursor solution on the perovskite light absorption layer by a spin coater, absorbing 75 mu L of solution by a liquid-transferring gun, wherein the rotation speed is 4000r/min during spin coating, and the spin coating time is 45s。
And step five, preparing the top electrode.
Putting the prepared substrate into a vacuum coating instrument to evaporate an Ag electrode to finish MAPbI 3-x Cl x The perovskite solar cell was prepared and is designated as a 6.
And step six, testing and characterizing the device.
The prepared perovskite solar cell A6 is subjected to a photoelectric response test under the AM 1.5G solar spectrum.
And (3) testing results: effective area of 7mm 2 The energy conversion efficiency reaches 24.4 percent, the open-circuit voltage is 1.20V, and the short-circuit current density is 25.7mA/cm 2 The fill factor was 79.2%.
Comparative example 1
Preparation of MAPbI without additive 3-x Cl x And x is 0.5 perovskite solar cell.
The method comprises the following steps: and cleaning the ITO/glass substrate.
Pouring a proper amount of deionized water, and adding a small amount of Decon-90 to ultrasonically clean the ITO-coated glass substrate for 15 min; then ultrasonically cleaning the substrate for 15min by using de-alcohol and de-ionized water in sequence, drying the substrate by using a nitrogen gun after cleaning, and then pre-treating the substrate in Ozone (UV-Ozone) for 30 min.
Depositing SnO on the pretreated substrate 2 An electron transport layer.
2a) Preparation of SnO 2 Precursor solution;
draw 2mL of deionized water with a pipette and then 1mL of SnO with a pipette 2 And (4) stirring and mixing the solution and the solution uniformly.
2b) Spin-coated SnO 2 Precursor solution;
prepared SnO is spin-coated on cleaned ITO/glass substrate 2 The spin coating speed of the precursor solution is 3500r/min, the spin coating time is 30s, and then the precursor solution is annealed for 30min on a heating table at the temperature of 150 ℃ to form SnO with the thickness of 90 nm-100 nm 2 An electron transport layer.
Step three, preparing MAPbI 3-x Cl x A perovskite light absorbing layer.
3a) Preparation of MAPbI 3-x Cl x Precursor solution of titanium ore;
1072mg MAI and 2904mg PbI were weighed with an electronic balance 2 And 194.7mg of PbCl 2 Dissolving in 5mL of mixed solvent with volume ratio of dimethyl sulfoxide to gamma-butyrolactone being 3:7, heating and stirring the obtained solution at 70 ℃ until complete dissolution is achieved, and obtaining 1.35mol/L MAPbI 3-x Cl x And (3) solution. Placing on a magnetic heating table, heating at 75 deg.C, and stirring for 1 h.
3b) Spin coating MAPbI 3-x Cl x A perovskite light-absorbing layer;
under a nitrogen-filled glove box, in SnO 2 Spin coating MAPbI on electron transport layer 3-x Cl x And (3) solution. Spin-coating at 1500r/min for 15s, then accelerating to 4500r/min, then spin-coating for 45s, and rapidly dripping 310 μ L of toluene when the total spin-coating time is 40 s; finally, the prepared substrate is placed on a hot bench with the temperature of 100 ℃ for annealing for 15min to form MAPbI with the thickness of 200nm 3-x Cl x A perovskite light absorbing layer.
Step four, depositing NiO on the annealed perovskite light absorption layer x A hole transport layer.
4a) Preparation of NiO x Precursor solution;
270.79mg of Ni (NO) are first weighed out 3 ) 2 ·6H 2 O was dissolved in 10mL of a 2-methoxyethanol solution, and the solution was then placed on a heating table, the temperature was set at 50 ℃ and stirred for 1h, after which 1h 100. mu.L of an acetylacetone solution was added and further stirred at room temperature for 12 h.
4b) Spin-coated NiO x Precursor solution;
NiO produced x And spin-coating the precursor solution on the perovskite light absorption layer by using a spin coater, and sucking 75 mu L of solution by using a liquid-transferring gun, wherein the rotation speed during spin coating is 4000r/min, and the spin coating time is 45 s.
And step five, preparing the top electrode.
Putting the prepared substrate into a vacuum coating instrument for vapor deposition of an Ag electrode to complete MAPbI 3-x Cl x The perovskite solar cell was prepared and is designated as a 7.
And step six, testing and characterizing the device.
The prepared perovskite solar cell A7 is subjected to a photoelectric response test under the AM 1.5G solar spectrum.
And (3) testing results: effective area of 7mm 2 The energy conversion efficiency reaches 21.3 percent, the open-circuit voltage is 1.17V, and the short-circuit current density is 23.5mA/cm 2 The fill factor was 77.5%.
The test results of the above examples 1 to 6 and comparative example 1 are shown in table 1:
TABLE 1 test results
Figure BDA0003667258500000211
As can be seen from table 1, the defect passivating agents 3, 4-difluorobenzamide or 2, 4-difluorobenzamide were added to the perovskite precursor solutions in comparison with comparative example 1, where no passivating agent was added, in other examples 1-6. Passivating carbonyl energy in defect-deficient additive materials with Pb in solution with insufficient coordination of perovskite 2+ The ions are combined or combined with other cations in defect states to form a Lewis complex, thereby passivating the film defects. The fluorine group is a transmission channel of effective charges between the perovskite light absorption layer and the hole transmission layer. And the amino group increases C ═ O and Pb 2+ The coordination ability of the compound can reduce the defects on the surface of crystal grains, improve the film forming quality of perovskite, and the combination of amino and iodide can inhibit ion migration and further enhance the passivation effect. The short-circuit current, the open-circuit voltage and the fill factor are all improved, and finally, the conversion efficiency of the device is greatly improved.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of additional like elements in the article or device comprising the element.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (10)

1. A method for preparing a perovskite thin film, comprising:
step 1: preparing a perovskite precursor solution;
step 2: adding a passivation defect additive into the prepared perovskite precursor solution;
and step 3: preparing a perovskite thin film on a substrate by adopting a solution spin-coating method and adding a perovskite precursor solution added with a passivation defect additive;
wherein the small molecular structure of the passivation defect additive comprises carbonyl, amino, benzene ring and fluoro groups.
2. The method for producing a perovskite thin film according to claim 1, wherein the perovskite precursor solution is ABX 3 The precursor solution of the perovskite material, wherein A is at least one of Cs, MA and FA, B is Pb and/or Sn, and X is at least one of Cl, Br and I.
3. The process for preparing a perovskite thin film as claimed in claim 1, wherein the passivating defect additive is 3, 4-difluorobenzamide or 2, 4-difluorobenzamide.
4. The method for producing a perovskite thin film according to claim 1, wherein the molar ratio of the amount of the defect passivating additive to the perovskite precursor solution is 0.1% to 1.2%.
5. The method for producing a perovskite thin film according to claim 1, wherein the step 3 comprises:
step 3.1: a spinning machine is utilized, a solution spinning method is adopted to spin-coat the perovskite precursor solution added with the passivation defect additive on the substrate, and the perovskite wet film is prepared;
step 3.2: and annealing the perovskite wet film to obtain the perovskite thin film.
6. The method for preparing a perovskite thin film according to claim 5, wherein in the step 3.1, the spin coating process parameters are as follows: the rotating speed is 3500r/min, the acceleration is 3000r/min, and the spin coating time is 15-50 s.
7. The method for preparing a perovskite thin film according to claim 5, wherein in the step 3.2, the annealing treatment process parameters are as follows: the annealing time is 10-30 min, and the annealing temperature is 100-450 ℃.
8. Use of the perovskite thin film prepared by the method according to any one of claims 1 to 7 in a solar cell.
9. A perovskite solar cell comprising a substrate, a cathode, an electron transport layer, a perovskite light-absorbing layer, a hole transport layer and an anode, which are stacked in sequence from bottom to top, wherein the perovskite light-absorbing layer comprises a perovskite thin film prepared by the method as defined in any one of claims 1 to 7.
10. A method of fabricating a perovskite solar cell, comprising:
s1: cleaning an ITO coated substrate ultrasonic cleaner for 15min by using a Decon-90 deionized water solution, alcohol and deionized water in sequence, drying by a nitrogen gun, and then placing in ultraviolet ozone for pretreatment;
s2: the prepared SnO 2 Or TiO 2 The precursor solution is coated on the pretreated ITO substrate by spinningAnd then placing the substrate on a heating table to anneal for 10-30 min at the temperature of 100-450 ℃ to form an electron transmission layer;
s3: adding a passivation defect additive into the prepared perovskite precursor solution, performing spin coating on the perovskite precursor solution added with the passivation defect additive on an electron transport layer by adopting a solution spin coating method to obtain a perovskite wet film, and then putting the prepared substrate on a heating table for annealing treatment to form a perovskite light absorption layer; wherein the content of the first and second substances,
the spin coating process parameters are as follows: the rotating speed is 3500r/min, the acceleration is 3000r/min, and the spin-coating time is 15-50 s; the annealing treatment process parameters are as follows: the annealing time is 10-30 min, and the annealing temperature is 100-450 ℃;
s4: depositing a hole transport layer on the perovskite light absorption layer;
s5: evaporating a metal anode of the solar cell on the hole transport layer by using a vacuum coating instrument to obtain a perovskite solar cell;
wherein the small molecular structure of the passivation defect additive comprises carbonyl, amino, benzene ring and fluoro;
the perovskite precursor solution is ABX 3 The precursor solution of the perovskite material, wherein A is at least one of Cs, MA and FA, B is Pb and/or Sn, and X is at least one of Cl, Br and I.
CN202210590796.5A 2022-05-27 2022-05-27 Preparation method of efficient and stable titanium ore solar cell Pending CN114914362A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115717009A (en) * 2022-11-29 2023-02-28 江苏集萃有机光电技术研究所有限公司 Perovskite ink and preparation method and application thereof
CN116247116B (en) * 2023-03-09 2023-09-05 南开大学 2-amino-5-bromobenzamide material passivated inorganic perovskite-based solar cell and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115717009A (en) * 2022-11-29 2023-02-28 江苏集萃有机光电技术研究所有限公司 Perovskite ink and preparation method and application thereof
CN116247116B (en) * 2023-03-09 2023-09-05 南开大学 2-amino-5-bromobenzamide material passivated inorganic perovskite-based solar cell and preparation method thereof

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