CN112952005A - Solar cell and preparation method thereof - Google Patents

Solar cell and preparation method thereof Download PDF

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Publication number
CN112952005A
CN112952005A CN202110376304.8A CN202110376304A CN112952005A CN 112952005 A CN112952005 A CN 112952005A CN 202110376304 A CN202110376304 A CN 202110376304A CN 112952005 A CN112952005 A CN 112952005A
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anode
layer
solar cell
transport layer
cathode
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夏瑞东
张偲昊
马逾辉
刘筱
付帅
张志远
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Nanjing University of Posts and Telecommunications
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Nanjing University of Posts and Telecommunications
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02E10/549—Organic PV cells

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Abstract

The present disclosure describes a solar cell and a method for manufacturing the same, wherein the solar cell includes an anode, a cathode, and a hole transport layer, an active layer, an electron transport layer, and a hole blocking layer sequentially disposed between the anode and the cathode, the hole transport layer being disposed at the anode. Wherein the active layer is a perovskite thin film comprising cyano micromolecules. In the method, the cyano group of the cyano-group micromolecule can form a coordination bond with metal ions, so that the crystallization process in the perovskite forming process is effectively controlled, the size of perovskite crystal grains is increased, the appearance of an active layer is improved, and the performance of the solar cell is effectively improved. According to the present disclosure, a solar cell and a method of manufacturing the same can be provided.

Description

Solar cell and preparation method thereof
Technical Field
The disclosure belongs to the field of perovskite solar cells, and particularly relates to a perovskite solar cell added with cyano micromolecules.
Background
With the rapid development of science and technology in the world, fossil energy is exhausted day by day, so that it is necessary to find a new green and pollution-free energy in the world. Solar energy is a key energy source which is concerned by people because of the convenience in obtaining, rich stock, cleanness and no pollution. Solar cells are an important way to utilize solar energy. Silicon-based solar cells are currently one of the most rapidly developing and widely used mature technologies. However, since they must use expensive high-purity silicon, they face the problems of high cost and high energy consumption, which severely restricts the wider industrial application of silicon-based solar cells.
Organic-inorganic hybrid perovskite solar cells have been a research hotspot since 2009. In the perovskite solar cell structure, a perovskite thin film (also called a perovskite light absorption layer and a perovskite active layer) absorbs energy of photons and generates electrons (called as photogenerated carriers) and holes which respectively flow to a cathode region and an anode region of the cell.
Disclosure of Invention
The present disclosure has been made in view of the above-mentioned state of the art, and an object thereof is to provide a perovskite solar cell in which the morphology of a perovskite thin film is improved by using a cyano-based small molecule as an additive to improve photoelectric conversion efficiency, and a method for manufacturing the same.
To this end, the present disclosure provides a solar cell, which includes an anode, a cathode, and a hole transport layer, an active layer, an electron transport layer, and a hole blocking layer sequentially disposed between the anode and the cathode, where the hole transport layer is disposed on the anode, and the anode is transparent conductive glass, so that sunlight can penetrate through the anode; the active layer receives the solar light transmitted through the anode and generates electrons and holes; electrons generated by the active layer flow to the cathode through the electron transport layer; holes generated by the active layer flow to the anode through the hole transport layer; the hole blocking layer blocks holes generated by the active layer from flowing to the cathode; wherein the active layer is a perovskite thin film comprising cyano-group micromolecules. In the method, the cyano groups of the cyano micromolecules can form coordination bonds with metal ions in the perovskite, so that the crystallization process in the perovskite forming process is effectively controlled, the size of perovskite crystal grains is increased, the appearance of an active layer is improved, and the performance of the solar cell is effectively improved.
In addition, in the solar cell according to the present disclosure, optionally, the cyano-based small molecule includes dicyandiamide, guanidine hydrochloride, methyl guanidine hydrochloride, or amino guanidine hydrochloride. Thus, a cyano group in the molecule can form a coordinate bond with a metal ion.
Additionally, in the perovskite solar cell to which the present disclosure relates, the transparent conductive glass is optionally plated with indium tin oxide. Therefore, the transparent conductive glass has the conductive property, and can enable sunlight to penetrate through the anode and enter the light absorption layer (namely the active layer).
Additionally, in the perovskite solar cell to which the present disclosure relates, optionally, the hole transport layer comprises poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ]. Thus, the hole transport layer can transport holes generated by excitation after the active layer absorbs light energy.
In addition, in the perovskite solar cell according to the present disclosure, the perovskite thin film is optionally formed by crystallizing a perovskite precursor solution made by dissolving a cyano small molecule, methyl amine iodide, lead iodide and lead acetate in an N, N-dimethylformamide solution. Thereby, perovskite molecules are generated, and the perovskite thin film can absorb sunlight and be excited by photons in the sunlight to generate electrons and holes.
Additionally, in the perovskite solar cell to which the present disclosure relates, optionally, the electron transport layer comprises PC61And BM. Thereby, the generated electrons can be diffused and flow to the cathode.
Additionally, in the perovskite solar cell to which the present disclosure relates, optionally, the hole blocking layer comprises 2, 9-dimethyl-4, 7 diphenyl-1, 10-phenanthroline. Therefore, the hole can be effectively prevented from being transmitted to the cathode, the carrier recombination of the electron transmission layer and the cathode is reduced, and the electron collection efficiency of the cathode is improved.
Additionally, in the perovskite solar cell to which the present disclosure relates, optionally, the cathode comprises Ag. Therefore, the transmitted electrons can be effectively collected.
The present disclosure provides, in another aspect, a method for manufacturing a solar cell, where the solar cell includes an anode, a cathode, and a hole transport layer, an active layer, an electron transport layer, and a hole blocking layer sequentially disposed between the anode and the cathode, where the hole transport layer is disposed on the anode layer, and the method includes: preparing indium tin oxide conductive glass, and treating the indium tin oxide conductive glass by using Plasma to form the anode; spin coating [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine on the anode]PTAA to form the hole transport layer; spin coating a perovskite precursor solution on the hole transport layer to form the active layer; spin coating PC on the active layer61BM to form the electron transport layer; 2, 9-dimethyl-4, 7 diphenyl-1, 10-phenanthroline is evaporated on the electron transport layer to form the hole blocking layer; evaporating Ag on the hole blocking layer to form the cathode layer; the active layer is a perovskite thin film formed by crystallization of the perovskite precursor solution, the perovskite precursor solution comprises cyano-group small molecules, and the cyano-group small molecules comprise dicyandiamide, guanidine hydrochloride, methyl guanidine hydrochloride or aminoguanidine hydrochloride. In the method, the cyano groups of the cyano micromolecules can form coordination bonds with metal ions in the perovskite, so that the crystallization process in the perovskite forming process is effectively controlled, the size of perovskite crystal grains is increased, the appearance of an active layer is improved, and the performance of the solar cell is effectively improved.
In addition, in the preparation method related to the present disclosure, the perovskite precursor solution is optionally obtained by dissolving methyl amine iodide, lead iodide and lead acetate in an N, N-dimethylformamide solution, and adding a cyano-based small molecule. Thus, a perovskite precursor solution was prepared.
According to the present disclosure, it is possible to provide a perovskite solar cell and a method for manufacturing the same, in which the morphology of a perovskite thin film is improved by using a cyano-based small molecule as an additive to improve photoelectric conversion efficiency.
Drawings
Embodiments of the present disclosure will now be explained in further detail, by way of example only, with reference to the accompanying drawings, in which:
fig. 1 is a structural view showing a solar cell according to an example of the present disclosure.
Fig. 2 is a flow chart illustrating the fabrication of a solar cell according to an example of the present disclosure.
Fig. 3 is a J-V graph showing solar cells of examples and comparative examples according to the present disclosure.
Fig. 4 is an XRD pattern of a solar cell showing examples according to the present disclosure and a comparative example.
Fig. 5a is an SEM image showing a solar cell of a comparative example to which examples of the present disclosure relate.
Fig. 5b is an SEM image showing a solar cell of an embodiment according to an example of the present disclosure.
Detailed Description
The present disclosure will be described in further detail below with reference to the accompanying drawings and specific embodiments. In the drawings, the same components or components having the same functions are denoted by the same reference numerals, and redundant description thereof will be omitted.
It is noted that the terms "comprises," "comprising," and "having," and any variations thereof, in this disclosure, for example, a process, method, system, article, or apparatus that comprises or has a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include or have other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In addition, the headings and the like referred to in the following description of the present disclosure are not intended to limit the content or scope of the present disclosure, but merely serve as a reminder for reading. Such a subtitle should neither be understood as a content for segmenting an article, nor should the content under the subtitle be limited to only the scope of the subtitle.
Fig. 1 is a structural view showing a solar cell according to an example of the present disclosure.
In the present embodiment, as shown in fig. 1, the solar cell 1 may include an anode 10, a cathode 60, and a hole transport layer 20, an active layer 30, an electron transport layer 40, and a hole blocking layer 50 sequentially disposed between the anode 10 and the cathode 60, the hole transport layer 20 being disposed at the anode 10.
In some examples, the anode 10 may be transparent conductive glass. This allows sunlight to pass through the anode 10.
In some examples, the active layer 30 may receive solar light transmitted through the anode 10 and generate electrons and holes.
In some examples, electrons generated by the active layer 30 may flow through the electron transport layer 40 to the cathode 60.
In some examples, holes generated by the active layer 30 may flow to the anode 10 through the hole transport layer 20.
In some examples, the hole blocking layer 50 blocks holes generated from the active layer 30 from flowing to the cathode 60.
In some examples, the active layer 30 may be a perovskite thin film including cyano-based small molecules.
In the present disclosure, the cyano group of the cyano group-like small molecule can form a coordination bond with a metal ion, so as to effectively control the crystallization process in the perovskite formation process, increase the size of perovskite crystal grains, improve the morphology of the active layer 30, and further effectively improve the performance of the solar cell.
In some examples, the cyano-based small molecule may include dicyandiamide, guanidine hydrochloride, methyl guanidine hydrochloride, or amino guanidine hydrochloride. Thus, the cyano group in the molecule can directly form a coordinate bond with a metal ion.
In some examples, the transparent conductive glass may be plated with Indium Tin Oxide (ITO) or fluorine doped tin oxide (FTO). Thus, the transparent conductive glass has both conductive properties and enables sunlight to pass through the anode 10 and into the light absorbing layer (i.e., the active layer 30).
In some examples, hole transport layer 20 may include poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine](PTAA), Nickel oxide (NiO)X) Or copper oxide (CuO)X). Thereby, the generated holes may be diffused and flow to the anode 10.
In some examples, the perovskite thin film may be formed by crystallizing a perovskite precursor solution composed of cyano small molecules, Methyl Amine Iodide (MAI), methyl amine bromide (MABr), cesium iodide (CsI), cesium bromide (CsBr), lead iodide (PbI)2) Lead bromide (PbBr)2) And or lead acetate (Pb (Ac)2) Dissolving in N, N-Dimethylformamide (DMF). Thereby, perovskite molecules are generated, and the perovskite thin film can absorb sunlight and be excited by photons in the sunlight to generate electrons and holes.
In some examples, electron transport layer 40 may include fullerene derivative PC61BM or carbon 60 (C)60). The electrons thus generated can diffuse and flow to the cathode 60.
In some examples, the hole blocking layer 50 may include 2, 9-dimethyl-4, 7 diphenyl-1, 10-phenanthroline (BCP). Therefore, the hole blocking layer 50 can effectively block the transmission of holes to the cathode 60, reduce the carrier recombination between the electron transport layer 40 and the cathode 60, and improve the electron collection efficiency of the cathode 60.
In some examples, the cathode 60 may include silver (Ag), gold (Au), or aluminum (Al). Therefore, the transmitted electrons can be effectively collected.
Fig. 2 is a flow chart illustrating the fabrication of a solar cell according to an example of the present disclosure.
In the present embodiment, as shown in fig. 2, the fabrication process of the solar cell may include fabricating an anode (step S10).
In some examples, in step S10, the anode may be a sheet of ITO conductive glass.
In some examples, step S10 may include washing the ITO conductive glass sheet twice with a washing solution, deionized water, acetone, and ethanol, respectively, in sequence.
In some examples, step S10 may include placing the cleaned ITO conductive glass sheet into an 80 ℃ oven for a baking process for more than half an hour.
In some examples, step S10 may include subjecting the dried ITO conductive glass sheet to Plasma treatment for 2 minutes. Thereby, an anode was obtained.
In this embodiment, as shown in fig. 2, the process of manufacturing the solar cell may include spin-coating PTAA on the anode to form a hole transport layer (step S20).
In some examples, in step S20, spin coating poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] (PTAA) on the anode at 2500rpm using a spin coater may be included.
In some examples, the spin coating time may be 30S in step S20.
In some examples, in step S20, annealing the spin-coated PTAA anode at 130 ℃ for 10min in a nitrogen atmosphere may be included to form a hole transport layer.
In this embodiment, as shown in fig. 2, the process of manufacturing the solar cell may include spin-coating a perovskite precursor solution on the hole transport layer to form an active layer (step S30).
In some examples, step S30 may include spin coating the perovskite precursor solution onto the hole transport layer at a spin speed of 4000 rpm.
In some examples, the spin coating time may be 30S in step S30.
In some examples, in step S30, a process of annealing the hole transport layer after spin coating the perovskite precursor solution at 100 ℃ for 15min may be included to form the active layer.
In this embodiment, as shown in fig. 2, the process of preparing the solar cell may include spin coating PC on the active layer61BM, forming an electron transport layer (step S40).
In some examples, in step S40, the method may include rotating the PC at 1500rpm61BM solution spin coating to activeOn the layer.
In some examples, in step S40, the PC61The BM solution may be chlorobenzene, toluene, chloroform or xylene solution.
In some examples, the spin coating time may be 30S in step S40.
In some examples, in step S40, spin coating of a PC may be included61And annealing the active layer after the BM solution at 70 ℃ for 15min to form an electron transport layer.
In this embodiment, as shown in fig. 2, the process of manufacturing the solar cell may include evaporating BCP on the electron transport layer to form a hole blocking layer (step S50).
In some examples, in step S50, the method may include forming a hole blocking layer by evaporating 2, 9-dimethyl-4, 7 diphenyl-1, 10-phenanthroline (BCP) on the hole transport layer using a vacuum evaporation apparatus.
In some examples, in step S50, the rate of evaporation may be
Figure BDA0003004819720000071
In some examples, in step S50, the vapor pressure environment for evaporation may be less than 4 × 10-4Pa。
In some examples, the hole blocking layer may have a thickness of 5nm in step S50.
In this embodiment, as shown in fig. 2, the process of manufacturing the solar cell may include evaporating metal on the hole blocking layer to form a cathode (step S60).
In some examples, in step S60, the metal may be Ag.
In some examples, in step S60, the rate of evaporation may be
Figure BDA0003004819720000072
In some examples, in step S60, the vapor pressure environment for evaporation may be less than 4 × 10-4Pa。
In some examples, the thickness of the cathode may be 100nm in step S60.
Thus, a solar cell was obtained.
In this embodiment, the method may further include coating an epoxy resin material on the solar cell, and then irradiating the solar cell with ultraviolet light for 10min to perform encapsulation.
In the embodiment, the cyano group of the cyano micromolecule can form a coordination bond with metal ions, so that the crystallization process in the perovskite forming process is effectively controlled, the size of perovskite crystal grains is increased, the morphology of the film is improved, and the performance of the device is effectively improved.
According to the present disclosure, a solar cell and a method of manufacturing the same can be provided.
To further illustrate the present disclosure, the solar cell provided by the present disclosure is described in detail below with reference to examples, and the advantageous effects achieved by the present disclosure are fully illustrated with reference to comparative examples.
[ examples ]
Mixing MAI and PbI2Lead acetate Pb (Ac)2According to the weight ratio of 2.2: dissolving the mixture in N, N-dimethylformamide solution in a molar ratio of 0.4:0.6, adding 1mg/mL dicyanodiamine, and stirring the mixed solution at room temperature for 24 hours to prepare a perovskite precursor solution with the perovskite molecule concentration of 1mol/L for later use.
Washing the ITO conductive glass sheet with a washing solution, deionized water, acetone and ethanol in sequence twice, placing the ITO substrate in a constant-temperature oven at 80 ℃ for drying for more than half an hour, and performing Plasma treatment (Plasma treatment) for 2min after drying. The Plasma-treated ITO conductive glass was spin-coated with poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine at 2500rpm using a spin coater]PTAA, spin coating time 30s, and then annealing at 130 ℃ for 10min in a nitrogen atmosphere to form a hole transport layer. The annealed sheet was then placed in a glove box and the perovskite precursor solution was spin coated onto poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine at 4000rpm]And (3) forming a perovskite active layer on the PTAA layer by spin coating for 30s and then annealing at 100 ℃ for 15 min. Then the PC was put at 1500rpm61Spin coating BM chlorobenzene solution on perovskite filmThen, the spin coating was carried out for 30 seconds, and then annealing was carried out at 70 ℃ for 15min to form an electron transport layer. Then using vacuum evaporation equipment to carry out PC61Evaporating organic micromolecular material BCP on BM to form a hole blocking layer, wherein the thickness of the hole blocking layer is 5nm, and the evaporation rate is
Figure BDA0003004819720000081
The vapor deposition pressure environment is less than 4 x 10-4Pa. Finally, metal is evaporated on the hole barrier layer to form a metal cathode layer, the thickness of the metal cathode layer is 100nm, and the evaporation rate is
Figure BDA0003004819720000082
The vapor deposition pressure environment is less than 4 x 10-4pa. The prepared device is coated with epoxy resin material, and then is packaged after being irradiated for 10min by ultraviolet light.
[ comparative example ]
Mixing MAI and PbI2Lead acetate Pb (Ac)2According to the weight ratio of 2.2: dissolving the mixture in N, N-dimethylformamide DMF solution at a molar ratio of 0.4:0.6, adding 1mg/mL dicyanodiamine, and stirring the mixed solution at room temperature for 24 hours to prepare a perovskite precursor solution with the perovskite molecule concentration of 1mol/L for later use.
Washing the ITO conductive glass sheet with a washing solution, deionized water, acetone and ethanol in sequence twice, placing the ITO substrate in a constant-temperature oven at 80 ℃ for drying for more than half an hour, and performing Plasma treatment for 2min after drying. The Plasma-treated ITO conductive glass was spin-coated with poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine at 2500rpm using a spin coater]PTAA, spin coating time 30s, and then annealing at 130 ℃ for 10min in a nitrogen atmosphere to form a hole transport layer. The annealed sheet was then placed in a glove box and the perovskite precursor solution was spin coated onto poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine at 4000rpm]And (3) forming a perovskite light absorption layer on the PTAA layer by spin coating for 30s and then annealing at 100 ℃ for 15 min. Then the PC was put at 1500rpm61BM chlorobenzene solution was spin coated onto perovskite films for 30 seconds and then at 70 deg.CAnd performing annealing for 15min to form an electron transport layer. Then using vacuum evaporation equipment to carry out PC61Evaporating organic micromolecular material BCP on BM to form a hole blocking layer, wherein the thickness of the hole blocking layer is 5nm, and the evaporation rate is
Figure BDA0003004819720000091
The vapor deposition pressure environment is less than 4 x 10-4Pa. Finally, metal is evaporated on the hole barrier layer to form a metal cathode layer, the thickness of the metal cathode layer is 100nm, and the evaporation rate is
Figure BDA0003004819720000092
The vapor deposition pressure environment is less than 4 x 10-4pa. The prepared device is coated with epoxy resin material, and then is packaged after being irradiated for 10min by ultraviolet light.
[ results test ]
Fig. 3 is a J-V graph (current density-voltage graph) showing solar cells of examples and comparative examples according to the present disclosure. Fig. 4 is an XRD pattern (X-ray diffraction pattern) of the solar cell showing examples according to the present disclosure and comparative examples. Fig. 5a is an SEM image (scanning electron microscope image) showing a solar cell of a comparative example to which examples of the present disclosure relate. Fig. 5b is an SEM image showing a solar cell of an embodiment according to an example of the present disclosure.
The J-V curves of the solar cells manufactured in examples and comparative examples were measured at room temperature. As can be seen from FIG. 3, the open-circuit voltage of the solar cell of the example was 1.132V, and the short-circuit current was 22.439mAcm-2The filling factor is 0.789, and the efficiency is 20.05%; the open circuit voltage of the comparative example solar cell was 1.083V and the short circuit current was 21.869mAcm-2The fill factor was 0.777 and the efficiency was 18.41%.
The XRD patterns of the solar cells fabricated in the examples and comparative examples were obtained by the test. From the figure, in the example, after the cyano-group small molecule dicyandiamide is added, the characteristic peak intensity of the formed perovskite crystal is obviously increased, and the crystal quality is obviously improved.
SEM images of the solar cells manufactured in the examples and comparative examples were obtained through the test. As can be seen from the figure, in the example, after the cyano-group micromolecule dicyandiamide is added, the crystal grain size of the perovskite thin film is obviously increased, the defect state density is reduced, and the carrier recombination probability is reduced.
In conclusion, the size of perovskite crystal grains can be increased by adding cyano micromolecule dicyandiamide, the appearance of an active layer is improved, and the photoelectric conversion efficiency of the solar cell is effectively improved.
While the present disclosure has been described in detail in connection with the drawings and examples, it should be understood that the above description is not intended to limit the disclosure in any way. Those skilled in the art can make modifications and variations to the present disclosure as needed without departing from the true spirit and scope of the disclosure, which fall within the scope of the disclosure.

Claims (10)

1. A solar cell, characterized in that,
comprises an anode, a cathode, a hole transport layer, an active layer, an electron transport layer and a hole blocking layer, wherein the hole transport layer, the active layer, the electron transport layer and the hole blocking layer are sequentially arranged between the anode and the cathode, the hole transport layer is arranged at the anode, and the anode and the cathode are sequentially arranged in a staggered manner
The anode is made of transparent conductive glass, so that sunlight can penetrate through the anode;
the active layer receives the solar light transmitted through the anode and generates electrons and holes;
electrons generated by the active layer flow to the cathode through the electron transport layer;
holes generated by the active layer flow to the anode through the hole transport layer;
the hole blocking layer blocks holes generated by the active layer from flowing to the cathode;
wherein the active layer is a perovskite thin film comprising cyano-group micromolecules.
2. The solar cell of claim 1,
the cyano-group micromolecules comprise dicyandiamide, guanidine hydrochloride, methyl guanidine hydrochloride or aminoguanidine hydrochloride.
3. The solar cell of claim 1,
the transparent conductive glass is plated with indium tin oxide.
4. The solar cell of claim 1,
the hole transport layer comprises poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ].
5. The solar cell of claim 1,
the perovskite thin film is formed by crystallizing a perovskite precursor solution, wherein the perovskite precursor solution is prepared by dissolving cyano micromolecules, methyl amine iodide, lead iodide and lead acetate in an N, N-dimethylformamide solution.
6. The solar cell of claim 1,
the electron transport layer comprises a PC61BM。
7. The solar cell of claim 1,
the hole blocking layer comprises 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline.
8. The solar cell of claim 1,
the cathode includes Ag.
9. A method for manufacturing a solar cell is characterized in that,
the solar cell comprises an anode, a cathode, and a hole transport layer, an active layer, an electron transport layer and a hole blocking layer which are sequentially arranged between the anode and the cathode, wherein the hole transport layer is arranged on the anode layer,
the preparation method comprises the following steps:
preparing indium tin oxide conductive glass, and treating the indium tin oxide conductive glass by using Plasma to form the anode;
spin coating [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] on the anode to form the hole transport layer;
spin coating a perovskite precursor solution on the hole transport layer to form the active layer;
spin coating PC on the active layer61BM to form the electron transport layer;
2, 9-dimethyl-4, 7 diphenyl-1, 10-phenanthroline is evaporated on the electron transport layer to form the hole blocking layer;
evaporating Ag on the hole blocking layer to form the cathode layer;
the active layer is a perovskite thin film formed by crystallization of the perovskite precursor solution, the perovskite precursor solution comprises cyano-group small molecules, and the cyano-group small molecules comprise dicyandiamide, guanidine hydrochloride, methyl guanidine hydrochloride or aminoguanidine hydrochloride.
10. The production method according to claim 9,
dissolving methyl amine iodide, lead iodide and lead acetate in an N, N-dimethylformamide solution, and adding cyano micromolecules to obtain the perovskite precursor solution.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI836830B (en) * 2022-12-30 2024-03-21 國立清華大學 Method for manufacturing perovskite thin film
CN117964912A (en) * 2024-03-14 2024-05-03 苏州大学 Ion conjugated material and preparation method and application of metal coordination material thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI836830B (en) * 2022-12-30 2024-03-21 國立清華大學 Method for manufacturing perovskite thin film
CN117964912A (en) * 2024-03-14 2024-05-03 苏州大学 Ion conjugated material and preparation method and application of metal coordination material thereof
CN117964912B (en) * 2024-03-14 2024-06-14 苏州大学 Ion conjugated material and preparation method and application of metal coordination material thereof
CN117964912B8 (en) * 2024-03-14 2024-07-05 开贝科技(苏州)有限公司 Ion conjugated material and preparation method and application of metal coordination material thereof

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Application publication date: 20210611