CN115360303B - Interface in-situ induction layer and preparation method of photovoltaic device thereof - Google Patents
Interface in-situ induction layer and preparation method of photovoltaic device thereof Download PDFInfo
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Abstract
The invention discloses an interface in-situ induction layer and a preparation method of a photovoltaic device thereof, and the perovskite preferential orientation induction crystallization strategy provided by the invention is based on a cascade layer action mechanism, and achieves the purpose of in-situ induction preferential orientation crystallization by means of the conjugation action of a special group in N- (2-pyridyl) -trimethylacetamide and a hole transport layer and the anchoring action on the perovskite layer. The perovskite active layer crystal prepared by the method has the advantages that the defect state density is reduced, the carrier extraction and transmission capacity is enhanced, the interface non-radiative recombination is inhibited, and the final photoelectric conversion efficiency and the device stability are obviously improved.
Description
Technical Field
The invention belongs to the technical field of photovoltaic cells, and particularly relates to an interface in-situ induction layer and a preparation method of a photovoltaic device thereof.
Background
The organic-inorganic hybrid metal halide Perovskite Solar Cell (PSCs) has the characteristics of simple preparation process, low cost, high efficiency and the like, the Power Conversion Efficiency (PCE) of the PSCs is improved from 3.8% to 25.7% nowadays in recent years, and the power conversion efficiency is far lower than the maximum theoretical efficiency (> 30%) of Shokrey-Queiser (S-Q) limit, and has a great development space.
The low temperature solution process is far away from thermodynamic equilibrium, so that the prepared polycrystalline perovskite film inevitably generates a large number of defects at the buried bottom interface, and the method is characterized in that (1) in the crystallization process, halogen ions migrate and diffuse to cause lattice distortion, segregation, nonuniform grain size and the like; (2) During annealing, dimethyl sulfoxide solvent (DMSO) solvent trapped by the top pre-nucleated crystal shell eventually escapes the film, resulting in Pb 2+ The coordination cannot be carried out, volume collapse is generated, holes are left in the perovskite film near the hole transport layer/perovskite interface, and degradation of the film under illumination is accelerated. The defects cause the defect density at the buried bottom interface to be 1-2 orders of magnitude higher than that at the internal and top interfaces of the film, and serious carrier non-radiative recombination is generated, namely electron-hole pairs are assisted by the defect state energy levelThe composite energy is emitted out in the form of lattice vibration to generate energy loss, so that open-circuit Voltage (VOC), short-circuit current density (JSC) and Fill Factor (FF) are reduced, the efficiency and stability of the device are reduced, and the commercialization process of the photovoltaic device is limited.
The use of interface engineering regulation is a common means of adjusting energy level arrangement and improving device stability. In an inverted (p-i-n) perovskite solar cell, there is less interfacial modification between the perovskite and the hole transport layer substrate, and researchers use PEAI as the polar organic salt moiety to remain on top, resulting in an increase in the surface energy of PTAA, with the perovskite solution diffusing better to form a high quality thin film. Deposition of trimethylolpropane-tris (2-methyl-1-aziridine propionate) (SaC-100) on NiOx inhibits Ni 3+ The reaction with MAI improves conductivity and reduces interface defects, optimizes energy level alignment, reduces VOC loss and enhances device stability. The above regulation and control modes can optimize the perovskite crystal orientation, and obtain the perovskite film with low defect state density and uniformity and flatness, but most of the currently used materials regulate and control the substrate, and have little attention on the perovskite bottom crystallization condition or the cooperative regulation and control of the perovskite bottom crystallization condition and the perovskite bottom crystallization condition.
Disclosure of Invention
This section is intended to outline some aspects of embodiments of the invention and to briefly introduce some preferred embodiments. Some simplifications or omissions may be made in this section as well as in the description summary and in the title of the application, to avoid obscuring the purpose of this section, the description summary and the title of the invention, which should not be used to limit the scope of the invention.
The present invention has been made in view of the above and/or problems occurring in the prior art.
Therefore, the invention aims to overcome the defects in the prior art and provide a preparation method of a photovoltaic device containing an interface in-situ induction layer.
In order to solve the technical problems, the invention provides the following technical scheme: the method comprises the steps of manufacturing a first electrode layer on a substrate, manufacturing a first transmission layer on the first electrode layer, manufacturing an interface layer on the first transmission layer by using a resonance type molecular solution, manufacturing a photoactive layer on the interface layer by using a low-temperature solution annealing process, and sequentially manufacturing a second transmission layer and a barrier layer on the photoactive layer; and manufacturing a second electrode layer on the barrier layer.
As a preferred embodiment of the present invention, wherein: the first electrode layer is a metal oxide anode layer, the first transport layer is a hole transport layer, the interface layer is a buried interface in-situ induction layer, the photoactive layer is a perovskite active layer, the second transport layer is an electron transport layer, the blocking layer is a hole blocking layer, and the second electrode layer is a metal cathode layer.
As a preferred embodiment of the present invention, wherein: the substrate material is transparent glass; the metal oxide anode layer material is one of ITO or FTO, the hole transport layer material is p-type organic semiconductor material, the buried bottom interface in-situ induction layer material is N- (2-pyridyl) -trimethylacetamide, and the perovskite active layer material is (Cs) 0.05 FA 0.81 MA 0.14 )Pb(I 0.86 Br 0.14 ) 3 The electron transport layer material is an n-type material, and the hole blocking layer material is LiF; the metal cathode layer material is a high-conductivity metal material.
As a preferred embodiment of the present invention, wherein: the p-type organic semiconductor material is poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine]The n-type material comprises [6,6 ]]-phenyl-C61-butanoic acid methyl ester, PC 71 BM, bath copper medicine, C 60 The metal material with high conductivity is one or more of Cu, au, ag, al.
It is still another object of the present invention to overcome the deficiencies of the prior art and to provide a method for preparing an interfacial in situ inducing layer.
As a preferred embodiment of the present invention, wherein: dissolving N- (2-pyridyl) -trimethyl acetamide in an organic solvent, stirring to prepare an interface induction layer solution, spin-coating the interface induction layer solution on a hole transport layer, and placing the hole transport layer solution on a hot table for annealing reaction after spin-coating is finished to obtain the interface in-situ induction layer capable of inducing orientation crystallization of a perovskite active layer which is deposited later.
As a preferred embodiment of the present invention, wherein: the organic solvent comprises one or more of isopropanol, N-dimethylformamide, chlorobenzene and toluene.
As a preferred embodiment of the present invention, wherein: the stirring is carried out at 60 ℃ for 12 hours.
As a preferred embodiment of the present invention, wherein: the interface induction layer solution, wherein the concentration of the N- (2-pyridyl) -trimethylacetamide is 1-30 mg/mL.
As a preferred embodiment of the present invention, wherein: the spin coating speed is 2000-6000 r/min.
As a preferred embodiment of the present invention, wherein: the annealing reaction is carried out, wherein the reaction temperature is 70-120 ℃, and the reaction time is 5-30 min.
The invention has the beneficial effects that:
(1) The perovskite preferential orientation induction crystallization strategy of the interface in-situ induction layer is added in the photovoltaic device, so that induction can be performed before buried interface crystallization, the hydrophobicity of PTAA is improved, and the preparation of the perovskite crystal film with preferential orientation, low defect state density, flatness, compactness and low roughness is facilitated.
(2) The resonance type molecule-NPP molecule used in the invention can effectively crosslink PTAA to form pi-pi accumulation, the contact quality of the hole transport layer and the perovskite active layer is improved, and the extraction efficiency of carriers is increased; the resonance structure of the NPP molecule itself allows it to provide Lewis acid base groups and also to advance from the bottom interface to uncomplexed defects, such as uncomplexed Pb, during perovskite growth 2+ Bonding is carried out, defect state density is reduced, lattice distortion is slowed down, and a template induction effect is achieved on vertical orientation crystallization of the perovskite film.
(3) The perovskite crystallization regulation strategy adopted by the invention does not need to use extra vessels or equipment, has simple and economical process, can realize the preparation of large-area flexible perovskite thin films, and is beneficial to promoting the diversity and commercialized application of perovskite photovoltaic devices.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art. Wherein:
FIG. 1 is a schematic illustration of a process flow for fabricating a photovoltaic device of the present invention;
FIG. 2 is an atomic force microscope image of the perovskite active layer produced in example 2 of the present invention;
FIG. 3 is an atomic force microscope image of a perovskite active layer of example 1 of the invention;
FIG. 4 is a scanning electron microscope image of the perovskite active layer of example 2 of the invention;
FIG. 5 is a scanning electron microscope image of the perovskite active layer of example 1 of the invention;
FIG. 6 is a graph showing the absorbance contrast of perovskite active layers according to example 1 and example 2 of the present invention;
FIG. 7 is an X-ray diffraction chart of perovskite active layers of example 1 and example 2 according to the present invention;
FIG. 8 is a graph showing dark current contrast of photovoltaic devices prepared in examples 1 and 2 according to the present invention;
fig. 9 is a plot of spatial point and limiting current for the carrier devices of the photovoltaic devices made in examples 1 and 2 of this invention;
fig. 10 is a graph showing changes in light stability of the photovoltaic devices manufactured in examples 1 and 2 according to the present invention;
FIG. 11 is a graph showing J-V comparison of photovoltaic devices produced in examples 1, 2 and 3 according to the present invention;
FIG. 12 is a J-V comparison graph of photovoltaic devices made in examples 1 and 4 of this invention;
FIG. 13 is a J-V comparison graph of photovoltaic devices made in examples 1 and 5 of the present invention;
fig. 14 is a graph showing J-V contrast of the photovoltaic devices produced in example 1 and example 6 of the present invention.
Detailed Description
In order that the above-recited objects, features and advantages of the present invention will become more apparent, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present invention is not limited to the specific embodiments disclosed below.
Further, reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic can be included in at least one implementation of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments.
The raw materials involved in the invention are all commonly and commercially available without special description.
The general terms and abbreviations for the chemicals involved in the present invention are shown in table 1:
TABLE 1 chemical species correspond to full names and abbreviations
| Abbreviations (abbreviations) | Full scale |
| PTAA | Poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine] |
| NPP | N- (2-pyridyl) -trimethylacetamide |
| FAI | Formamidine iodinated amine |
| MABr | Methyl amine bromide |
| PbBr2 | Lead bromide |
| PbI2 | Lead iodide |
| PC61BM | [6,6]phenyl-C61-butanoic acid methyl ester |
| C60 | Fullerene (Fullerene) |
| LiF | Lithium fluoride |
| Cu | Copper (Cu) |
| DMF | N, N-dimethylformamide |
| DMSO | Dimethyl sulfoxide |
| Tol | Toluene (toluene) |
| CB | Chlorobenzene (Chlorobenzene) |
| EA | Acetic acid ethyl ester |
| IPA | Isopropyl alcohol |
Example 1
Referring to fig. 1, which shows a schematic view of a process for preparing a photovoltaic device according to the present invention, the present embodiment provides a method for preparing a photovoltaic device using a perovskite active layer doped with SEM-HCl.
S1: taking transparent glass as a substrate, and manufacturing a first electrode layer on the substrate;
further, the first electrode layer is a metal oxide anode layer, and the material used is ITO;
and ultrasonically cleaning the ITO conductive glass by using ITO washing liquid, deionized water, acetone and ethanol in sequence, drying the ITO conductive glass in a baking oven at 100 ℃ for 10min, and finally cleaning the ITO conductive glass by using ultraviolet ozone for 15 min to obtain the first electrode layer.
S2: manufacturing a first transmission layer on the first electrode layer;
further, the first transport layer is a hole transport layer, and the material used is poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ] (PTAA);
dissolving PTAA in toluene (Tol) to obtain a solution with the concentration of 4mg/ml, spin-coating the PTAA solution on ITO conductive glass by using a spin coater, spin-coating the PTAA solution at the rotation speed of 4000rpm for 30s, and annealing the solution at the temperature of 100 ℃ for 20min after spin-coating; and obtaining the first transmission layer.
S3: manufacturing an interface layer on the first transmission layer;
furthermore, the interface layer is a buried interface in-situ induction layer, and the material is N- (2-pyridyl) -trimethylacetamide (NPP);
NPP is dissolved in isopropyl alcohol (IPA) with the concentration of 15mg/mL, stirred for 12 hours at 60 ℃ to obtain NPP solution, the solution is spin-coated on PTAA at the rotating speed of 4000rpm, and annealed on a hot table at 100 ℃ for 15 minutes to obtain the interface layer.
S4: manufacturing a photoactive layer on the interface layer;
further, the photoactive layer is a perovskite active layer, and the material is (Cs 0.05 FA 0.81 MA 0.14 )Pb(I 0.86 Br 0.14 ) 3
228.072mg of FAI, 26.208mg of MABr and 92.484mg of PbBr 2 And 648.072mg of PbI 2 Dissolving in a mixed solution of DMF and DMSO with a volume ratio of 4:1 of 1.2mL to prepare a perovskite precursor solution with a concentration of 1.38M, and preparing a perovskite active layer on an NPP substrate by adopting a one-step spin coating method, wherein the specific preparation process is as follows: rotating at 1000rpm, spin-coating for 55s, dripping an anti-solvent EA (ethylene oxide) 40s after spin-coating the perovskite solution, promoting the rapid nucleation of perovskite and well attaching the perovskite to a substrate, and obtaining the perovskite active layer after the reaction is finished.
S5: sequentially manufacturing a second transmission layer and a barrier layer on the perovskite photoactive layer;
further, the second transport layer is an electron transport layer made of [6,6 ]]phenyl-C61-butanoic acid methyl ester (PC) 61 BM) fullerene (C) 60 ) The method comprises the steps of carrying out a first treatment on the surface of the The blocking layer is a hole blocking layer, and the material used is lithium fluoride (LiF);
PC is put into 61 BM was dissolved in CB to give PC at a concentration of 20mg/ml 61 BM solution for spin coating electron transport layer, PC 61 The spin coating speed of BM is 2000rpm, spin coating time is 1min; vacuum evaporation equipment is reused in PC 61 Evaporation C on BM 60 Constructing an electron transport layer, wherein the evaporation rate is 0.6A/Hz; evaporating BCP (binary phase-change material) serving as a hole blocking layer on the electron transport layer, wherein the evaporation rate is 0.08A/Hz, and the air pressure environment ensured in the evaporation process is less than 5 multiplied by 10 -4 Pa, evaporating to obtain the electron transport layer and the barrier layer.
S6: manufacturing a second electrode layer on the barrier layer;
further, the second electrode layer is prepared by a metal cathode, and the material used is metal Cu;
evaporating metal Cu cathode material on the hole blocking layer by using vacuum evaporation equipment to form a metal cathode layer, wherein the evaporation rate is 10A/Hz, and the air pressure environment ensured in the evaporation process is less than 5 multiplied by 10 -4 Pa；
The thickness of the substrate of the photovoltaic cell prepared by the method is 1-2 mm, the thickness of the metal oxide anode layer is 80-110 nm, the thickness of the hole transport layer is 15-30 nm, the thickness of the perovskite active layer is 150-250nm, the thickness of the electron transport layer is 400-600 nm, and the thickness of the metal cathode layer is 80-120 nm.
Example 2
Referring to fig. 2 to 10, in order to verify the beneficial effects of the present invention, the present embodiment provides a comparison test of a photovoltaic device prepared without the buried interface inducing layer with a photovoltaic device prepared in embodiment 1 of the present invention, and the test results are compared by means of scientific demonstration to verify the actual effects of the present method.
This embodiment differs from embodiment 1 in that:
step S3 is not included: and directly manufacturing a photoactive layer on the first transmission layer, wherein the manufactured photovoltaic device does not contain an interface in-situ induction layer.
The rest steps and the preparation process are the same as in example 1, and a standard photovoltaic device is prepared.
As can be seen from fig. 2 and fig. 3, the perovskite thin film morphology graphs prepared in the embodiment 1 and the embodiment 2 of the present invention show that the perovskite active layer prepared based on the perovskite preferential orientation induced crystallization strategy of the present invention has a relatively flat surface morphology and a relatively low surface roughness.
Referring to fig. 4 and 5, it can be seen that the perovskite active layers prepared in example 1 and example 2 of the present invention have an increased average grain size and a reduced surface enrichment Pb.
As can be seen in fig. 6, the perovskite thin film of the example has improved light absorption, indicating that the crystalline thin film has better quality, which will contribute to the generation of more photo-generated carriers. As can be seen from fig. 7, the crystalline orientation of the film of example 1 was optimized with respect to example 2. As can be seen from fig. 8, example 1 has lower leakage current than the standard device of example 2, which indicates that the interface contact property of the photovoltaic device manufactured in example 1 is improved, which is helpful for long distance carrier transport.
As can be seen from fig. 9, the defect state density of the photovoltaic device prepared in example 1 is lower, which indicates that perovskite crystal growth is optimized and film quality is higher. The device prepared in example 1 was compared with the device prepared in example 2 for performance.
As can be seen from fig. 10, the photovoltaic device manufactured in example 1 can maintain the initial efficiency of more than 100% after 2360 hours of irradiation with a standard solar light intensity, and the light stability of the device is significantly improved, compared with the standard device manufactured in example 2. The above characterization demonstrates that the device in the examples has significantly improved overall photovoltaic performance and stability compared to the device in the comparative examples. In the crystallization growth process of the embodiment, the NPP layer plays a plurality of roles as a buried interface induction layer, PTAA can be effectively crosslinked through pi-pi accumulation, and the energy level arrangement is optimized while a rigid structure is formed, so that the extraction and the transmission of hole carriers are facilitated; and lead the uncoordinated Pb at the interface of the bottom of the perovskite 2+ Bonding is carried out, in-situ induction is carried out on the perovskite film, perovskite preferential orientation crystallization is induced, defect state density is reduced, and lattice distortion is slowed down.
Example 3
Referring to fig. 11, in order to verify the beneficial effects of the present invention, the present embodiment provides a photovoltaic device obtained by using a buried interface induction layer made of different materials, and the photovoltaic device obtained by using the embodiment 1 of the present invention is subjected to a comparison test, and the test results are compared by using a scientific demonstration means, so as to verify the actual effects of the present method.
This embodiment differs from embodiment 1 in that:
and (3) adjusting materials used in the step S3 for preparing the interface in-situ induction layer to be 3-chloro-2-hydrazinopyridine (CPH), 2-chloro-3-pyridinemethanol (CPM) and 2-chloronicotinamide (CPC) respectively: CPH, CPM, CPC was dissolved in IPA at a concentration of 15mg/mL and stirred at 60℃for 12 hours.
The rest of the procedure and the preparation process are the same as in example 1.
The performance of the photovoltaic device obtained was compared with that of the photovoltaic device obtained in example 1, and the results are shown in Table 2 and FIG. 11.
TABLE 2 Performance control Table of photovoltaic devices made from interface layers made of different materials
| Voc/V | Jsc/mAcm -2 | FF/％ | PCE/％ | |
| Standard device | 1.09 | 19.96 | 77.91 | 17.04 |
| NPP | 1.11 | 21.48 | 81.50 | 19.46 |
| CPH | 1.05 | 19.49 | 71.99 | 14.83 |
| CPM | 1.09 | 20.46 | 76.38 | 17.16 |
| CPC | 1.10 | 20.18 | 76.13 | 16.90 |
Example 4
Referring to fig. 12, in order to verify the beneficial effects of the present invention, the present embodiment provides a photovoltaic device manufactured by using a buried interface induction layer manufactured by using different organic solvents, and the photovoltaic device manufactured by using the embodiment 1 of the present invention is subjected to a comparison test, and the test results are compared by using a scientific and demonstration means, so as to verify the actual effects of the present invention.
This embodiment differs from embodiment 1 in that:
the organic solvents used in the preparation of the interface in-situ induction layer in the step S3 are toluene (TOl) and N, N-Dimethylformamide (DMF): NPP was dissolved in TOl at a concentration of 15mg/mL.
The rest of the procedure and the preparation process are the same as in example 1.
The performance of the photovoltaic device obtained was compared with that of the photovoltaic device obtained in example 1, and the results are shown in Table 3 and FIG. 12.
TABLE 3 Performance control Table of photovoltaic devices made from interfacial layers prepared with different organic solvents
| Voc/V | Jsc/mAcm -2 | FF/％ | PCE/％ | |
| NPP/Tol | 1.06 | 20.55 | 77.38 | 16.94 |
| NPP/IPA | 1.11 | 21.48 | 81.50 | 19.46 |
| NPP/DMF | 1.09 | 20.66 | 80.02 | 18.09 |
Example 5
Referring to fig. 13, in order to verify the beneficial effects of the present invention, the present embodiment provides a photovoltaic device obtained by using the buried interface induction layer prepared under different annealing conditions, and the photovoltaic device prepared in embodiment 1 of the present invention is subjected to a comparison test, and the test results are compared by a scientific demonstration means, so as to verify the actual effects of the present method.
This embodiment differs from embodiment 1 in that:
and (3) adjusting the annealing time of the interface in-situ induction layer prepared in the step S3 to be 5, 10, 15 and 20 minutes respectively: and respectively annealing for 5, 10, 15 and 20 minutes on a hot table at the temperature of 100 ℃ to obtain the interface layer.
The rest of the procedure and the preparation process are the same as in example 1.
The performance of the photovoltaic device obtained was compared with that of the photovoltaic device obtained in example 1, and the results are shown in Table 4 and FIG. 13.
TABLE 4 Performance control Table of photovoltaic devices made from interface layers prepared at different annealing times
| Voc/V | Jsc/mAcm -2 | FF/％ | PCE/％ | |
| 5min | 1.07 | 20.84 | 78.05 | 17.55 |
| 10min | 1.09 | 21.18 | 79.24 | 18.41 |
| 15min | 1.10 | 21.62 | 79.55 | 19.00 |
| 20min | 1.08 | 21.54 | 79.28 | 15.56 |
Example 6
Referring to fig. 14, in order to verify the beneficial effects of the present invention, the present embodiment provides a photovoltaic device obtained by using a buried interface induction layer prepared with different NPP concentrations, and the photovoltaic device prepared in embodiment 1 of the present invention is subjected to a comparison test, and the test results are compared by a scientific demonstration means, so as to verify the actual effects of the present method.
This embodiment differs from embodiment 1 in that:
the concentration of NPP solution when the interface in-situ induction layer is prepared in the step S3 is adjusted to be 1mg/ml and 30mg/ml respectively: NPP was dissolved in IPA at concentrations of 1mg/mL and 30mg/mL, respectively.
The rest of the procedure and the preparation process are the same as in example 1.
As shown in tables 2 to 4 and FIGS. 11 to 14, in order to verify the advantageous effects of the present invention, the parameters for preparing the interface layer were adjusted, and it can be seen that the photovoltaic device prepared in example 1 had an open circuit voltage of 1.11V and a short circuit current density of 21.48mA/cm 2 The fill factor was 81.50% and the photoelectric conversion efficiency PCE was 19.46%. Whereas the device in example 2 had an open circuit voltage of 1.09V and a short circuit current density of 19.96mA/cm 2 The packing factor was 77.91% and the efficiency was only 17.04%.
And, it can be seen by comparison that only the interface layer material is selected from NPP molecules and organic solventsWhen IPA is selected, the performance of the obtained photovoltaic device is best, because the resonance type molecule-NPP molecule used in the invention can effectively crosslink PTAA to form pi-pi accumulation, the contact quality of the hole transport layer and the perovskite active layer is improved, and the extraction efficiency of carriers is increased. At the same time, the resonance structure of the NPP molecule itself enables it to provide Lewis acid base groups, and also to advance from the bottom interface during perovskite growth to uncomplexed defects, such as uncomplexed Pb 2+ Bonding is carried out, defect state density is reduced, lattice distortion is slowed down, and a template induction effect is achieved on vertical orientation crystallization of the perovskite film.
In summary, the perovskite preferential orientation induced crystallization strategy provided by the invention achieves the purpose of in-situ induced preferential orientation crystallization by means of the conjugation action of special groups in NPP and a hole transport layer and the anchoring action on the perovskite layer based on the action mechanism of the cascade layer. Compared with the prior art, the perovskite active layer crystal prepared by the method has the advantages that the defect state density is reduced, the carrier extraction and transmission capacity is enhanced, the interface non-radiative recombination is inhibited, and the final photoelectric conversion efficiency and the device stability are obviously improved.
It should be noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solution of the present invention may be modified or substituted without departing from the spirit and scope of the technical solution of the present invention, which is intended to be covered in the scope of the claims of the present invention.
Claims (8)
1. A preparation method of a photovoltaic device containing an interface in-situ induction layer is characterized by comprising the following steps: the method comprises the steps of manufacturing a first electrode layer on a substrate, manufacturing a first transmission layer on the first electrode layer, manufacturing an interface layer on the first transmission layer by using a resonance type molecular solution, manufacturing a photoactive layer on the interface layer by using a low-temperature solution annealing process, and sequentially manufacturing a second transmission layer and a barrier layer on the photoactive layer; manufacturing a second electrode layer on the barrier layer;
wherein said at least one ofThe substrate is made of transparent glass, the first transmission layer is a hole transmission layer, and the material used is p-type organic semiconductor material poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine]The method comprises the steps of carrying out a first treatment on the surface of the The interface layer is a buried interface in-situ induction layer, and the material is N- (2-pyridyl) -trimethyl acetamide; the photoactive layer is a perovskite active layer, and the material used is (Cs 0.05 FA 0.81 MA 0.14 )Pb(I 0.86 Br 0.14 ) 3 ；
The preparation method of the buried interface in-situ induction layer comprises the steps of dissolving N- (2-pyridyl) -trimethylacetamide in one of isopropanol and N, N-dimethylformamide, stirring to prepare an interface induction layer solution with the concentration of N- (2-pyridyl) -trimethylacetamide of 15mg/mL, spin-coating the interface induction layer solution on a hole transport layer, and placing the interface induction layer on a hot table for annealing reaction after spin-coating is finished, thus obtaining the buried interface in-situ induction layer.
2. The method of making a photovoltaic device comprising an interfacial in situ inducing layer according to claim 1, wherein: the first electrode layer is a metal oxide anode layer, the second transmission layer is an electron transmission layer, the blocking layer is a hole blocking layer, and the second electrode layer is a metal cathode layer.
3. The method of making a photovoltaic device comprising an interfacial in situ inducing layer according to claim 2, wherein: the metal oxide anode layer material is one of ITO or FTO, the electron transport layer material is n-type material, and the hole blocking layer material is LiF; the metal cathode layer material is a high-conductivity metal material.
4. A method of making a photovoltaic device comprising an interfacial in situ inducing layer as claimed in claim 3 wherein: the n-type material comprises [6,6 ]]-phenyl-C61-butanoic acid methyl ester, PC 71 BM, bath copper medicine, C 60 Is one or more of Cu, au, ag, al.
5. The method of making a photovoltaic device comprising an interfacial in situ inducing layer according to claim 1, wherein: the stirring is carried out at 60 ℃ for 12 hours.
6. The method of making a photovoltaic device comprising an interfacial in situ inducing layer according to claim 1, wherein: the spin coating is carried out at a spin coating speed of 2000-6000 r/min.
7. The method of making a photovoltaic device comprising an interfacial in situ inducing layer according to claim 1, wherein: the annealing reaction is carried out, wherein the reaction temperature is 70-120 ℃, and the reaction time is 5-30 min.
8. The photovoltaic device comprising an interfacial in-situ inducing layer prepared by the method of claim 1.
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