CN107134529A - It is a kind of with perovskite solar cell of carbon nano dot modifying interface and preparation method thereof - Google Patents
It is a kind of with perovskite solar cell of carbon nano dot modifying interface and preparation method thereof Download PDFInfo
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- CN107134529A CN107134529A CN201710188438.0A CN201710188438A CN107134529A CN 107134529 A CN107134529 A CN 107134529A CN 201710188438 A CN201710188438 A CN 201710188438A CN 107134529 A CN107134529 A CN 107134529A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 52
- 239000002096 quantum dot Substances 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 230000005540 biological transmission Effects 0.000 claims abstract description 25
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 239000011737 fluorine Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 238000004528 spin coating Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 9
- 229910001887 tin oxide Inorganic materials 0.000 claims description 9
- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 8
- -1 polyethylene terephthalate Polymers 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 6
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 claims description 5
- 150000001767 cationic compounds Chemical class 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910001411 inorganic cation Inorganic materials 0.000 claims description 4
- 229910021645 metal ion Inorganic materials 0.000 claims description 4
- 150000002892 organic cations Chemical class 0.000 claims description 4
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 3
- 239000004695 Polyether sulfone Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 3
- 229920006393 polyether sulfone Polymers 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 150000002220 fluorenes Chemical class 0.000 claims 1
- 239000002131 composite material Substances 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000009466 transformation Effects 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000003786 synthesis reaction Methods 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 10
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 8
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 6
- 229910052740 iodine Inorganic materials 0.000 description 6
- 239000011630 iodine Substances 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- IMMOJBOWSSMFLA-UHFFFAOYSA-N [Cl].[Pb].CN Chemical compound [Cl].[Pb].CN IMMOJBOWSSMFLA-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- XDLSXXMJBCNXPS-UHFFFAOYSA-N [Pb].CN Chemical compound [Pb].CN XDLSXXMJBCNXPS-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 125000001309 chloro group Chemical class Cl* 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- IIYFAKIEWZDVMP-UHFFFAOYSA-N linear paraffin C13 Natural products CCCCCCCCCCCCC IIYFAKIEWZDVMP-UHFFFAOYSA-N 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Abstract
The invention discloses a kind of with perovskite solar cell of carbon nano dot modifying interface and preparation method thereof, its structure is followed successively by：Substrate, transparent conductive electrode, electron transfer layer, carbon nano-dot layer, perovskite light absorbing layer, hole transmission layer and metal electrode.The present invention is designed using the device of carbon nano dot modifying interface perovskite solar cell electron transfer layer, on electron transport material, using the carbon nano dot of synthesis, improve electron transfer rate, reduce Interface composites probability, the photoelectric transformation efficiency of perovskite solar cell is improved, preparation technology is simple, significantly improves the overall performance of perovskite solar cell.
Description
Technical field
The invention belongs to area of solar cell, and in particular to a kind of perovskite solar energy with carbon nano dot modifying interface
Battery and preparation method thereof.
Background technology
Global climate change has become the common challenge of facing mankind, and the reproducible clean energy resource of development and utilization seems
It is increasingly urgent.Solar cell converts solar energy into electric energy using cleaning and reproducible solar energy source.In practical application
In, silica-based solar cell is widely used due to ripe technique, the leading position of occuping market.But it is due to silicon
High energy consumption and high cost prepared by based solar battery, developing low-cost and efficient novel solar battery cause people's
Widely studied interest.
Perovskite solar cell is by the use of organic metal halide semiconductor as light absorbing material, because it has perovskite
Structure ABX3And gain the name, wherein A is monovalence organic or inorganic cation (CH3NH3 +,HC(NH2)2 +,Cs+), B is divalent metal
Ion (Pb2+, Sn2+, Ge2+), X is halide anion (I-,Br-,Cl-).Perovskite material MAPbX3(MA=CH3NH3 +, X=I-
or Br-) be initially sensitizer as DSSC (DSSC), due to its in liquid electrolyte it is unstable
Property, had in 2009 3.8% photoelectric transformation efficiency.Have using organic metal halide as the perovskite material of design feature
There are excellent light absorbs and carrier transmission performance, already exceed 20% to solar energy conversion efficiency in 2016, this causes it to connect
The efficiency of nearly crystal silicon solar energy battery and traditional cadmium telluride (CdTe) and copper and indium gallium tin (CIGS) thin-film solar cells, its
Excellent performance and cheap preparation cost advantage, have caused worldwide extensive concern and research interest, rapidly into
For the novel solar battery of great market potential.
The lifting of perovskite solar cell photoelectric conversion efficiency depends not only on the absorbability of light, additionally depends on current-carrying
Transmission rate of the son in perovskite structure.The free electron and hole that separation of charge is produced must be rapidly transmitted to corresponding electricity
Photoelectric current could be produced after pole, charge collection efficiency can be influenceed by Interface composites loss and defect capture.If will
Electrode is reached before Interface composites and defect capture, it is necessary to which carrier has higher transmission rate.In perovskite too
In positive energy battery device, there are a large amount of interfaces and lack in perovskite light absorbing layer and electron transfer layer, the interface of hole transmission layer
Fall into.
Therefore, improve one of key factor of solar cell properties is how significantly to reduce defect concentration, improve
The transmission rate of carrier.In addition to being individually improved per layer of material to perovskite solar cell, difference in functionality layer
Between modifying interface and regulation and control be particularly important.
The content of the invention
It is an object of the invention to provide a kind of perovskite solar cell with carbon nano dot modifying interface, which raises boundary
Face carrier transport speed, reduces recombination probability, effectively improves the photoelectric transformation efficiency of perovskite solar cell.
It is a further object to provide the preparation method of above-mentioned solar cell.
The object of the present invention is achieved like this：A kind of perovskite solar cell with carbon nano dot modifying interface, its
It is characterised by：The solar battery structure is followed successively by：Substrate, transparent conductive electrode, electron transfer layer, carbon nano-dot layer, calcium
Titanium ore light absorbing layer, hole transmission layer and metal electrode.
In described carbon nano-dot layer, carbon nano dot scantling is between 5 nanometers to 15 nanometer.
Described substrate is the flexible substrates that polyimides, polyethylene terephthalate or polyethersulfone resin are made,
Or, it is the rigid basement that glass is made.
Described transparent conductive electrode is tin indium oxide ITO, fluorine doped tin oxide FTO or Al-Doped ZnO AZO.
Described electron transfer layer is titanium oxide, zinc oxide or graphene, and thickness is between 5 nanometers to 100 nanometer.
Described perovskite light absorbing layer is with general perovskite formula structure ABX3Material, wherein A be monovalence it is organic or
Inorganic cation, B is bivalent metal ion, and X is halide anion, and thickness is between 200 nanometers to 500 nanometer.
Described hole transmission layer uses hole transmission layer Spiro-OMeTAD ([(the 4- methoxies of N, N- bis- of 2,2', 7,7'- tetra-
Base phenyl) amino]-the fluorenes of 9,9'- spiral shells two), thickness is between 5 nanometers to 150 nanometer.
Described metal electrode is gold, silver or aluminum metal, and thickness is between 50 nanometers to 200 nanometer.
The preparation method of the above-mentioned perovskite solar cell with carbon nano dot modifying interface, it is characterised in that including following
Step：Have in sputtering in the substrate of transparent conductive electrode, successively spin coating electron transfer layer, carbon nano-dot layer, perovskite light absorbs
Layer, hole transmission layer, last hot evaporation metal electrode.
The present invention is designed using the device of carbon nano dot modifying interface perovskite solar cell electron transfer layer, in electronics
On transmission material layer, using the carbon nano dot of synthesis, electron transfer rate is improved, reduces Interface composites probability, improves calcium
The photoelectric transformation efficiency of titanium ore solar cell, preparation technology is simple, significantly improves the overall performance of perovskite solar cell.
In order to be able to further illustrate the feature and technology contents of the present invention, the accompanying drawing below in connection with the present invention is referred to,
But accompanying drawing is only to provide reference and explanation, is not intended to be any limitation as the present invention.
Brief description of the drawings
Fig. 1 is the present invention with carbon nano dot modifying interface perovskite solar battery structure schematic diagram.
Wherein：Transparent conductive electrode 1, electron transfer layer 2, carbon nano-dot layer 3, perovskite light absorbing layer 4, hole transmission layer
5th, metal electrode 6, substrate 7.
Embodiment
The present invention uses the device design with carbon nano dot modifying interface electron transfer layer, as shown in figure 1, the solar energy
Battery structure is followed successively by：Substrate 7, transparent conductive electrode 1, electron transfer layer 2, carbon nano-dot layer 3, perovskite light absorbing layer 4, sky
Cave transport layer 5 and metal electrode 6.
It is preferred that, in carbon nano-dot layer 3, carbon nano dot scantling is between 5 nanometers to 15 nanometer.Substrate 7 is polyamides
The flexible substrates that imines, polyethylene terephthalate or polyethersulfone resin etc. are made, or, it is the rigidity that glass etc. is made
Substrate.Transparent conductive electrode 1 is tin indium oxide ITO, fluorine doped tin oxide FTO or Al-Doped ZnO AZO.Electron transfer layer 2 is oxygen
Change titanium, zinc oxide or graphene, thickness is between 5 nanometers to 100 nanometer.Perovskite light absorbing layer 4 is with general perovskite formula
Structure ABX3Material, wherein A is monovalence organic or inorganic cation (CH3NH3 +,HC(NH2)2 +,Cs+Deng), B is divalent metal
Ion (Pb2+, Sn2+, Ge2+Deng), X is halide anion (I-,Br-,Cl-Deng), thickness is between 200 nanometers to 500 nanometer.It is empty
The use hole transmission layer of cave transport layer 5 Spiro-OMeTAD (2,2', 7,7'- tetra- [N, N- bis- (4- methoxyphenyls) amino] -9,
The fluorenes of 9'- spiral shells two), thickness is between 5 nanometers to 150 nanometer.Metal electrode 6 be gold, silver or aluminum metal, thickness be 50 nanometers extremely
Between 200 nanometers.
During preparation, have in sputtering in the substrate 7 of transparent conductive electrode 1, successively spin coating electron transfer layer 2, carbon nano-dot layer
3rd, perovskite light absorbing layer 4, hole transmission layer 5, last hot evaporation metal electrode 6, you can.
Below by way of specific comparative example and examples of implementation, the invention will be further elaborated, but the present invention is not
It is limited to this specific examples.
Comparative example 1：
Perovskite solar battery structure is：There is the fluorine doped tin oxide FTO of transparent conductive electrode 1 substrate of glass 7 in sputtering
On, (the Ti0 of spin coating electron transfer layer 2 successively2), the methylamine lead chlorine salt compounded of iodine CH of perovskite light absorbing layer 43NH3PbI3-xClx, hole pass
Defeated layer 5Spiro-OMeTAD (2,2', 7,7'- tetra- [N, N- bis- (4- methoxyphenyls) amino]-fluorenes of 9,9'- spiral shells two), last heat
Silver electrode 6 is deposited.Tested without packaging under 25 DEG C and 30%-50% humidity, solar energy conversion efficiency 8.7%.
Embodiment 1：
Perovskite solar battery structure is：There is the fluorine doped tin oxide FTO of transparent conductive electrode 1 substrate of glass 7 in sputtering
On, (the Ti0 of spin coating electron transfer layer 2 successively2), carbon nano-dot layer 3 (the 20mol/L aqueous solution), the methylamine lead of perovskite light absorbing layer 4
Chlorine salt compounded of iodine CH3NH3PbI3-xClx, hole transmission layer 5Spiro-OMeTAD (2,2', 7,7'- tetra- [N, N- bis- (4- methoxyphenyls)
Amino]-the fluorenes of 9,9'- spiral shells two), last hot evaporation silver electrode 6.Tested without packaging under 25 DEG C and 30%-50% humidity, too
Positive energy conversion efficiency 10.0%.
Wherein, the preparation method for the carbon aqueous nanodot solutions of Spun-on carbon nano-dot layer 3 can be using routine at present
Preparation method, for example：According to required concentration, appropriate 4,7,10- tri- oxygen -1,13- tridecane diamines, D-Glucose are added and gone
Settled solution is formed in ionized water, is then placed in 500 watts of microwaves 10 minutes, subsequent solution is changed into yellow from colourless, finally becomes
For burgundy, this dark brown solution shows that carbon nano dot is formed, and Spun-on carbon nano-dot layer 3 is carried out available for the present embodiment.
Embodiment 2：
Perovskite solar battery structure is：There is the fluorine doped tin oxide FTO of transparent conductive electrode 1 substrate of glass 7 in sputtering
On, (the Ti0 of spin coating electron transfer layer 2 successively2), carbon nano-dot layer 3 (the 11mol/L aqueous solution, preparation method be the same as Example 1), calcium
The methylamine lead chlorine salt compounded of iodine CH of titanium ore light absorbing layer 43NH3PbI3-xClx, hole transmission layer 5Spiro-OMeTAD (2,2', 7,7'- tetra-
[N, N- bis- (4- methoxyphenyls) amino]-fluorenes of 9,9'- spiral shells two), last hot evaporation silver electrode 6.Without packaging at 25 DEG C and
Tested under 30%-50% humidity, solar energy conversion efficiency 9.5%.
Embodiment 3：
Perovskite solar battery structure is：There is the fluorine doped tin oxide FTO of transparent conductive electrode 1 substrate of glass 7 in sputtering
On, (the Ti0 of spin coating electron transfer layer 2 successively2), carbon nano-dot layer 3 (the 8mol/L aqueous solution, preparation method be the same as Example 1), calcium titanium
The methylamine lead chlorine salt compounded of iodine CH of ore deposit light absorbing layer 43NH3PbI3-xClx, hole transmission layer 5Spiro-OMeTAD (2,2', 7,7'- tetra- [N,
N- bis- (4- methoxyphenyls) amino]-the fluorenes of 9,9'- spiral shells two), last hot evaporation silver electrode 6.Without packaging at 25 DEG C and
Tested under 30%-50% humidity, solar energy conversion efficiency 9.3%.
Embodiment 4：
Perovskite solar battery structure is：There is the fluorine doped tin oxide FTO of transparent conductive electrode 1 substrate of glass 7 in sputtering
On, (the Ti0 of spin coating electron transfer layer 2 successively2), carbon nano-dot layer 3 (the 5mol/L aqueous solution, preparation method be the same as Example 1), calcium titanium
The methylamine lead chlorine salt compounded of iodine CH of ore deposit light absorbing layer 43NH3PbI3-xClx, hole transmission layer 5Spiro-OMeTAD (2,2', 7,7'- tetra- [N,
N- bis- (4- methoxyphenyls) amino]-the fluorenes of 9,9'- spiral shells two), last hot evaporation silver electrode 6.Without packaging at 25 DEG C and
Tested under 30%-50% humidity, solar energy conversion efficiency 10.5%.
Embodiment 5：
Perovskite solar battery structure is：There is the fluorine doped tin oxide FTO of transparent conductive electrode 1 substrate of glass 7 in sputtering
On, (the Ti0 of spin coating electron transfer layer 2 successively2), carbon nano-dot layer 3 (the 2mol/L aqueous solution, preparation method be the same as Example 1), calcium titanium
The methylamine lead chlorine salt compounded of iodine CH of ore deposit light absorbing layer 43NH3PbI3-xClx, hole transmission layer 5Spiro-OMeTAD (2,2', 7,7'- tetra- [N,
N- bis- (4- methoxyphenyls) amino]-the fluorenes of 9,9'- spiral shells two), last hot evaporation silver electrode 6.Without packaging at 25 DEG C and
Tested under 30%-50% humidity, solar energy conversion efficiency 9.0%.
The solar energy conversion efficiency of perovskite solar cell is as shown in table 1 in each embodiment.
Table 1.
| Solar energy conversion efficiency (%) | |
| Comparative example 1 | 8.7 |
| Embodiment 1 | 10.0 |
| Embodiment 2 | 9.5 |
| Embodiment 3 | 9.3 |
| Embodiment 4 | 10.5 |
| Embodiment 5 | 9.0 |
Note：Device detection condition is, under the conditions of no encapsulation, and 25 DEG C are tested with 30%-50% humidity.
In summary, the present invention uses the device design with carbon nano dot modifying interface electron transfer layer, utilizes carbon nanometer
The excellent electronic transmission performance of point material, improves the transmission rate of carrier, reduces boundary defect recombination probability, significantly improves calcium
The device performance of titanium ore solar cell, therefore carbon nano dot can be as excellent modifying interface materials application in the perovskite sun
Can battery.Those skilled in the art can make other various change accordingly with technique according to the invention scheme and technical concept
Become and deform, and all these changes and deformation should all belong to the protection domain of the claims in the present invention.
Claims (10)
1. a kind of perovskite solar cell with carbon nano dot modifying interface, it is characterised in that：The solar battery structure
It is followed successively by：Substrate, transparent conductive electrode, electron transfer layer, carbon nano-dot layer, perovskite light absorbing layer, hole transmission layer and gold
Belong to electrode.
2. the perovskite solar cell according to claim 1 with carbon nano dot modifying interface, it is characterised in that：It is described
Carbon nano-dot layer in, carbon nano dot scantling be 5 nanometers to 15 nanometers between.
3. the perovskite solar cell according to claim 1 with carbon nano dot modifying interface, it is characterised in that：It is described
Substrate be the flexible substrates that are made of polyimides, polyethylene terephthalate or polyethersulfone resin, or, be glass system
Into rigid basement.
4. the perovskite solar cell according to claim 1 with carbon nano dot modifying interface, it is characterised in that：It is described
Transparent conductive electrode be tin indium oxide ITO, fluorine doped tin oxide FTO or Al-Doped ZnO AZO.
5. the perovskite solar cell according to claim 1 with carbon nano dot modifying interface, it is characterised in that：It is described
Electron transfer layer be titanium oxide, zinc oxide or graphene, thickness be 5 nanometers to 100 nanometers between.
6. the perovskite solar cell according to claim 1 with carbon nano dot modifying interface, it is characterised in that：It is described
Perovskite light absorbing layer be with general perovskite formula structure ABX3Material, wherein A is monovalence organic or inorganic cation, B
It is bivalent metal ion, X is halide anion, and thickness is between 200 nanometers to 500 nanometer.
7. the perovskite solar cell according to claim 1 with carbon nano dot modifying interface, it is characterised in that：It is described
Hole transmission layer use hole transmission layer Spiro-OMeTAD ([N, N- bis- (4- methoxyphenyls) ammonia of 2,2', 7,7'- tetra-
Base]-the fluorenes of 9,9'- spiral shells two), thickness is between 5 nanometers to 150 nanometer.
8. the perovskite solar cell according to claim 1 with carbon nano dot modifying interface, it is characterised in that：It is described
Metal electrode be gold, silver or aluminum metal, thickness be 50 nanometers to 200 nanometers between.
9. with the preparation method of the perovskite solar cell of carbon nano dot modifying interface described in claim 1-8, its feature exists
In comprising the following steps：Have in sputtering in the substrate of transparent conductive electrode, successively spin coating electron transfer layer, carbon nano-dot layer, calcium
Titanium ore light absorbing layer, hole transmission layer, last hot evaporation metal electrode.
10. the preparation method of the perovskite solar cell according to claim 9 with carbon nano dot modifying interface, it is special
Levy and be：For in the carbon aqueous nanodot solutions of Spun-on carbon nano-dot layer, the molar concentration of carbon nano dot to be 2-20mol/L.
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| CN108878661A (en) * | 2018-06-29 | 2018-11-23 | 西北工业大学 | A kind of preparation method of the perovskite solar battery of carbon quantum dot modification |
| CN112397657A (en) * | 2019-08-19 | 2021-02-23 | Tcl集团股份有限公司 | Modified zinc sulfide, preparation method thereof and quantum dot light-emitting diode |
| CN112505975A (en) * | 2020-12-24 | 2021-03-16 | 中国人民解放军军事科学院国防工程研究院工程防护研究所 | WO (WO)x-NiOxFlexible electrochromic device and preparation method thereof |
| CN112786790A (en) * | 2021-01-11 | 2021-05-11 | 华中科技大学 | Perovskite solar cell, interface modification layer thereof and preparation method of modification layer |
| CN113258007A (en) * | 2021-05-08 | 2021-08-13 | 华能新能源股份有限公司 | Carbon quantum dot, preparation method thereof and application of carbon quantum dot in perovskite solar cell |
| CN114583059A (en) * | 2022-03-15 | 2022-06-03 | 华碧新能源技术研究(苏州)有限公司 | Perovskite solar cell with bias electrode |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108878661A (en) * | 2018-06-29 | 2018-11-23 | 西北工业大学 | A kind of preparation method of the perovskite solar battery of carbon quantum dot modification |
| CN108878661B (en) * | 2018-06-29 | 2019-12-13 | 西北工业大学 | Preparation method of carbon quantum dot modified perovskite solar cell |
| CN112397657A (en) * | 2019-08-19 | 2021-02-23 | Tcl集团股份有限公司 | Modified zinc sulfide, preparation method thereof and quantum dot light-emitting diode |
| CN112505975A (en) * | 2020-12-24 | 2021-03-16 | 中国人民解放军军事科学院国防工程研究院工程防护研究所 | WO (WO)x-NiOxFlexible electrochromic device and preparation method thereof |
| CN112786790A (en) * | 2021-01-11 | 2021-05-11 | 华中科技大学 | Perovskite solar cell, interface modification layer thereof and preparation method of modification layer |
| CN113258007A (en) * | 2021-05-08 | 2021-08-13 | 华能新能源股份有限公司 | Carbon quantum dot, preparation method thereof and application of carbon quantum dot in perovskite solar cell |
| CN114583059A (en) * | 2022-03-15 | 2022-06-03 | 华碧新能源技术研究(苏州)有限公司 | Perovskite solar cell with bias electrode |
| CN114583059B (en) * | 2022-03-15 | 2024-02-13 | 华碧光能科技(苏州)有限公司 | Perovskite solar cell with bias electrode |
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