CN105845829A - Perovskite solar cell - Google Patents

Perovskite solar cell Download PDF

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Publication number
CN105845829A
CN105845829A CN201610190114.6A CN201610190114A CN105845829A CN 105845829 A CN105845829 A CN 105845829A CN 201610190114 A CN201610190114 A CN 201610190114A CN 105845829 A CN105845829 A CN 105845829A
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zinc oxide
single crystal
oxide single
heteroatom doping
nanostructured
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CN105845829B (en
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黄丰
刘渊
郑伟
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Fujian Institute of Research on the Structure of Matter of CAS
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Fujian Institute of Research on the Structure of Matter of CAS
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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Abstract

The invention discloses a perovskite solar cell, which comprises an electronic transmission substrate, a perovskite light active layer, a hole transporting layer and a counter electrode. The perovskite solar cell is characterized in that the material of the electronic transmission substrate is selected from zinc oxide single crystals, heteroatom-doped zinc oxide single crystals, zinc oxide single crystals with micro-structures on the surfaces thereof, and heteroatom-doped zinc oxide single crystals with micro-structures on the surfaces thereof. The electronic transmission substrate of the perovskite solar cell is made of zinc oxide single crystals directly, heteroatom-doped zinc oxide single crystals, or zinc oxide single crystals/heteroatom-doped zinc oxide single crystals after being subjected to chemical vapor deposition, sputtering and ion etching treatment. In this way, the light-transmitting, conductive and electron-transmission functions are realized at the same time, while the number of layers in the solar cell is reduced. Moreover, the structure of the perovskite solar cell is greatly simplified, and the manufacturing process of the perovskite solar cell is optimized.

Description

A kind of perovskite solaode
Technical field
The application relates to a kind of perovskite solaode, belongs to technical field of microelectronic devices.
Background technology
Along with the consumption day by day of non-renewable energy resources in world wide, energy shortage and ecological deterioration are Become the most serious problem that the new century mankind are faced.Develop and clean renewable new forms of energy more Get over and paid attention to by people.Solar energy one of which just is green, cleaning, regenerative resource, takes it The most nexhaustible, the potential important component part become in future source of energy supply.Turn as photoelectricity The solaode of parallel operation part, its research and application have been subjected to more and more pay attention to.
Perovskite hybrid used for solar batteries perovskite material ABX3As photoactive layer, Compared with traditional silica-based solar cell, it have again with low cost, the absorption coefficient of light is high, current-carrying The advantages such as carrier diffusion length is big, quality is light, pliability is good.Along with domestic and international correlational study in recent years Deepen continuously, perovskite solaode mainly uses meso-hole structure and planar heterojunction two kinds knot Structure, photoelectric transformation efficiency and the stability of perovskite solaode constantly promote.
Efficient perovskite solar battery structure typically requires and chooses suitable electrically conducting transparent material Material is as substrate, and conventional has the FTO electro-conductive glass (SnO of doped with fluorine2Transparent conducting glass, letter Be referred to as FTO), ITO (on the basis of sodium calcio or silicon boryl substrate glass, utilize sputtering, evaporation Plate indium oxide layer stannum film manufacture etc. multiple method, be called for short ITO) etc.；Meanwhile also Needing to prepare suitable electron transfer layer on substrate basis to conduct electronics, conventional has titanium dioxide Titanium, zinc oxide, stannum oxide etc..Generally, the preparation of these electron transfer layers needs through first at substrate Upper spin coating precursor solution, the process carrying out high temperature sintering the most again could be formed, the most time-consuming but also Effort, adds the structure of battery simultaneously, and preparation process is loaded down with trivial details.
Summary of the invention
An aspect according to the application, it is provided that a kind of perovskite solaode, by directly using Zinc oxide single crystal, the Zinc oxide single crystal of Heteroatom doping or use chemical gaseous phase deposition, sputtering method, Zinc oxide single crystal that ion etching processed or the Zinc oxide single crystal of Heteroatom doping are as electric transmission Substrate, has light transmitting electro-conductive and the function of electric transmission collection electronics simultaneously concurrently, instead of in prior art Use the transparent conductive material+electron transfer layer TiO such as ITO or FTO2Or SnO2Structure, reduce The number of plies of battery, simplifies the structure of perovskite solaode largely, eliminates loaded down with trivial details Preparation process.
Described perovskite solaode, including electric transmission substrate, perovskite photoactive layer, hole Transport layer and to electrode, it is characterised in that described electric transmission substrate is selected from Zinc oxide single crystal, miscellaneous former Sub-doping zinc-oxide monocrystalline, surface contain the Zinc oxide single crystal of micro structure, the miscellaneous of micro structure is contained on surface Atom doped Zinc oxide single crystal.
Described Zinc oxide single crystal, Heteroatom doping Zinc oxide single crystal, surface contain the zinc oxide of micro structure The crystal structure of the Heteroatom doping Zinc oxide single crystal that monocrystalline, surface contain micro structure is hexagonal wurtzite Structure.
Described perovskite photoactive layer comprises the light active material of perovskite type crystal structure, as having calcium Titanium ore crystal formation (ABX3) organic metal halogenide light absorbent, such as lead iodide methylamine CH3NH3PbI3。
Preferably, the hetero atom in described Heteroatom doping Zinc oxide single crystal is selected from group III A metal unit At least one in element.It is further preferred that the hetero atom in described Heteroatom doping Zinc oxide single crystal It is aluminum and/or gallium.
Preferably, described Heteroatom doping Zinc oxide single crystal (is abbreviated as selected from gallium-doped zinc oxide monocrystalline Or Al-Doped ZnO monocrystalline (being abbreviated as AZO) GZO).
Preferably, the miscellaneous former of micro structure is contained on micro structure is contained on described surface Zinc oxide single crystal and surface Micro structure in sub-doping zinc-oxide monocrystalline is micrometer structure and/or nanostructured.
Preferably, described micrometer structure and/or nanostructured are by Zinc oxide single crystal surface or hetero atom Carry out ion etching on doping zinc-oxide single-crystal surface to obtain.
Preferably, described micrometer structure and/or nanostructured are by Zinc oxide single crystal surface or hetero atom Use vapour deposition process and/or magnetron sputtering method to be formed on doping zinc-oxide single-crystal surface and there is micron knot Structure and/or the zinc oxide of nanostructured, there is the Heteroatom doping oxygen of micrometer structure and/or nanostructured Change zinc, there is micrometer structure and/or the titanium oxide of nanostructured, there is micrometer structure and/or nano junction At least one in the stannum oxide of structure obtains.
The Heteroatom doping of micro structure is contained on Zinc oxide single crystal that micro structure is contained on described surface and surface Zinc oxide single crystal can contain micrometer structure and nanostructured simultaneously.
As a kind of embodiment, the Zinc oxide single crystal that micro structure is contained on described surface is that surface is contained and received During the Zinc oxide single crystal of rice structure, the Zinc oxide single crystal of nanostructured is contained by zinc oxide list in surface Use vapour deposition process and/or magnetron sputtering method to be formed on brilliant surface and there is the zinc oxide of nanostructured, tool There is the Heteroatom doping zinc oxide of nanostructured, there is the titanium oxide of nanostructured, there is nanostructured Stannum oxide at least one obtain.
As a kind of embodiment, the Heteroatom doping Zinc oxide single crystal that micro structure is contained on described surface is When the Heteroatom doping Zinc oxide single crystal of nanostructured is contained on surface, the oxidation of nanostructured is contained on surface Zinc monocrystalline spatters by using vapour deposition process and/or magnetic control on Heteroatom doping Zinc oxide single crystal surface Penetrate method formation to there is the zinc oxide of nanostructured, there is the Heteroatom doping zinc oxide of nanostructured, tool At least one in the titanium oxide that has nanostructured, the stannum oxide with nanostructured obtains.
Preferably, described micrometer structure is selected from micro wire, micron ball, micron film, micron wall, micron At least one in flower, micro belt, micron tube, micron bar, micron membranes.
Preferably, described nanostructured is selected from nano wire, nanosphere, nanometer sheet, nm wall, nanometer At least one in flower, nano belt, nanotube, nanometer rods, nanometer film.
Another aspect according to the application, it is provided that the preparation method of a kind of perovskite solaode, its It is characterised by, comprises the following steps:
S1, it is provided that electric transmission substrate；
S2, forms perovskite photoactive layer above described electric transmission substrate；
S3, forms hole transmission layer above described perovskite photoactive layer；And
S4, the most square paired electrode.
As a kind of embodiment, the preparation method of perovskite solaode, it is characterised in that by Following steps form:
S1, it is provided that electric transmission substrate；
S2, forms perovskite photoactive layer above described electric transmission substrate；
S3, forms hole transmission layer above described perovskite photoactive layer；And
S4, the most square paired electrode.
Electric transmission substrate described in step S1 uses Zinc oxide single crystal；Or
Electric transmission substrate uses Heteroatom doping Zinc oxide single crystal；Or
Electric transmission substrate uses Zinc oxide single crystal-nano-zinc oxide composite material, described Zinc oxide single crystal -nano-zinc oxide composite material is by carrying out chemical gaseous phase formation of deposits tool on Zinc oxide single crystal surface The zinc oxide film having nanostructured obtains；Or
Electric transmission substrate uses Zinc oxide single crystal-micron zinc oxide composite, described Zinc oxide single crystal -micron zinc oxide composite forms micron knot by carrying out ion etching on Zinc oxide single crystal surface Structure obtains；Or
Electric transmission substrate uses Heteroatom doping Zinc oxide single crystal-nanometer Heteroatom doping zinc oxide multiple Condensation material, described Heteroatom doping Zinc oxide single crystal-nanometer Heteroatom doping zinc oxide composite passes through Heteroatom doping Zinc oxide single crystal surface carries out chemical gaseous phase formation of deposits there is nanostructured Heteroatom doping zinc oxide film obtains；Or
Electric transmission substrate uses Heteroatom doping Zinc oxide single crystal-micron Heteroatom doping zinc oxide multiple Condensation material, described Heteroatom doping Zinc oxide single crystal-micron Heteroatom doping zinc oxide composite passes through Heteroatom doping Zinc oxide single crystal surface carries out ion etching formation micrometer structure obtain.
The beneficial effect of the application includes but not limited to:
Perovskite solaode described herein, the ZnO monocrystalline of employing or GZO monocrystalline or AZO monocrystalline has the material of the features such as good electric conductivity, excellent light transmission and high thermal stability As substrate, electronics can be collected simultaneously as light transmitting electro-conductive material and electron transport material, instead of The transparent conductive materials such as ITO or FTO+electron transport material TiO2Or SnO2Structure, decrease The number of plies of battery, simplifies the structure of perovskite solaode largely, eliminates loaded down with trivial details Preparation process.
Accompanying drawing explanation
Fig. 1 is the structural representation of herein described perovskite solaode.
Detailed description of the invention
The structural representation of herein described perovskite solaode refers to Fig. 1, and perovskite light is lived Property layer 2 is laminated on electric transmission substrate 1；Hole transmission layer 3 be laminated on perovskite photoactive layer 2 it On；Electrode 4 is laminated on hole transmission layer 3.In the battery of this structure, sunlight is from electronics Transferring substrate 1 side enters to inject perovskite photoactive layer, produces exciton, and exciton is lived at perovskite light Property layer 2, the interface of electric transmission substrate 1 and hole transmission layer 3 there is separation of charge, electronics is straight Connect in the monocrystalline importing electric transmission substrate 1, the incoming hole transmission layer in hole 2, then electron hole Conduction, to external circuit, then completes photoelectric conversion process.
Below in conjunction with embodiment in detail the application is described in detail, but the application is not limited to these embodiments.
In embodiment, ZnO monocrystalline, GZO monocrystalline and AZO monocrystalline according to inventor yellow rich before Patent " improving Hydrothermal Growth monocrystalline quality and the seed crystal suspension equipment of efficiency " (Patent No. ZL 2012 2 0277751.4) equipment and the method that are previously mentioned in are prepared.
Embodiment 1
By the dimethylformamide (being abbreviated as DMF) of lead iodide that 40 μ l concentration are 461mg/ml Solution be added drop-wise to ZnO single-crystal surface as electric transmission substrate 1 (15.5mm × 13.5mm × 0.5mm), the most again on sol evenning machine with the rotating speed spin coating 30s of 2000r.p.m.；After spin coating uniformly, Spin coating is had ZnO monocrystalline 70 DEG C of heating 20min on hot plate of lead iodide；Subsequently by cooling well The ZnO single-chip scribbling lead iodide be placed on sol evenning machine, dripping 100 μ l concentration is 35mg/ml The aqueous isopropanol of methylpyridinium iodide ammonium on lead iodide films, stand 1min, make lead iodide and iodine first Amine is fully contacted reaction and forms methylamine lead iodide perovskite photoactive layer 2, then with 2000r.p.m.'s Rotating speed spin coating 30s；Treat that spin coating terminates, the monocrystalline of methylamine lead iodide perovskite photoactive layer will be defined Sheet is placed in 90 DEG C of heating 1h on warm table；Will be covered with methylamine lead iodide perovskite photolytic activity the most again The single-chip of layer is placed in sol evenning machine, and dripping 30 μ l concentration is the Spiro-MeOTAD of 80mg/ml The chlorobenzene solution of (2,2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) amino]-9,9'-spiral shell two fluorenes), then With 2000r.p.m. rotating speed spin coating 30s, it is subsequently placed in exsiccator oxidation 12h, forms hole transmission layer 3.Hole transmission layer deposits 80nm gold shape paired electrode 4 by thermal evaporation.
The effective area of gained battery is 0.0725cm2, photoelectric transformation efficiency is 6.27%, and electric current is close Degree is 12.99mA/cm2, open-circuit voltage 915.3mV, fill factor, curve factor FF are 52.68%.
Embodiment 2
The concrete preparation process of battery is with embodiment 1, and difference is, with gallium-doped zinc oxide GZO For electric transmission substrate 1.
The effective area of gained battery is 0.0725cm2, photoelectric transformation efficiency is 6.45%, and electric current is close Degree is 13.50mA/cm2, open-circuit voltage 910.0mV, fill factor, curve factor FF are 52.50%.
Embodiment 3
The concrete preparation process of battery is with embodiment 1, and difference is, with Al-Doped ZnO AZO For electric transmission substrate 1.
The effective area of gained battery is 0.0725cm2, photoelectric transformation efficiency is 6.14%, and electric current is close Degree is 12.73mA/cm2, open-circuit voltage 915.1mV, fill factor, curve factor FF are 52.70%
Embodiment 4
The concrete preparation process of battery is with embodiment 1, and difference is, logical on ZnO monocrystalline Cross chemical gaseous phase deposition (CVD) and prepare one layer of zinc oxide nanosphere formation composite construction as electronics biography Defeated substrate 1.The method of chemical gaseous phase deposition is with reference to summer elder generation of Zhejiang University brightness Master's thesis " solid source Learn vapour deposition process and prepare the research of ZnO nano-structure and growth mechanism thereof " in method, at ZnO The zinc oxide nanosphere of 100～200nm is formed on monocrystalline.
Embodiment 5
The concrete preparation process of battery is with embodiment 1, and difference is, logical on GZO monocrystalline Cross chemical gaseous phase deposition (CVD) and prepare one layer of zinc oxide nano rod formation composite construction as electronics biography Defeated substrate 1.The method of chemical gaseous phase deposition is with reference to summer elder generation of Zhejiang University brightness Master's thesis " solid source Learn vapour deposition process and prepare the research of ZnO nano-structure and growth mechanism thereof " in method, at GZO The zinc oxide nano rod of 60～110nm is formed on monocrystalline.
Embodiment 6
The concrete preparation process of battery is with embodiment 1, and difference is, logical on AZO monocrystalline Cross chemical gaseous phase deposition (CVD) and prepare one layer of zinc oxide nanosphere formation composite construction as electronics biography Defeated substrate 1.The method of chemical gaseous phase deposition is with reference to summer elder generation of Zhejiang University brightness Master's thesis " solid source Learn vapour deposition process and prepare the research of ZnO nano-structure and growth mechanism thereof " in method, at AZO The zinc oxide nanosphere of 100～200nm is formed on monocrystalline.
Embodiment 7
The concrete preparation process of battery is with embodiment 1, and difference is, makes on ZnO monocrystalline Standby one layer of zinc oxide nano-wire array forms composite construction as electric transmission substrate 1, zinc-oxide nano The preparation method of linear array with reference to Peking University's Wang Wei's thesis for the doctorate " based on the nanowire array structure sun Can battery research " in 3.2.4 part method, the zinc oxide nano of gained film thickness 1.7～1.8 μm Nanowire arrays.
Embodiment 8
The concrete preparation process of battery is with embodiment 1, and difference is, makes on GZO monocrystalline Standby one layer of zinc oxide nano-wire array forms composite construction as electric transmission substrate 1, zinc-oxide nano The preparation method of linear array with reference to Peking University's Wang Wei's thesis for the doctorate " based on the nanowire array structure sun Can battery research " in 3.2.4 part method, the zinc oxide nano of gained film thickness 1.7～1.8 μm Nanowire arrays.
Embodiment 9
The concrete preparation process of battery is with embodiment 1, and difference is, makes on AZO monocrystalline Standby one layer of zinc oxide nano-wire array forms composite construction as electric transmission substrate 1, zinc-oxide nano The preparation method of linear array with reference to Peking University's Wang Wei's thesis for the doctorate " based on the nanowire array structure sun Can battery research " in 3.2.4 part method, the zinc oxide nano of gained film thickness 1.7～1.8 μm Nanowire arrays.
Embodiment 10
The concrete preparation process of battery is with embodiment 1, and difference is, logical on ZnO monocrystalline Cross magnetron sputtering method and prepare one layer of TiO2Thin film formation composite construction is as electric transmission substrate 1, specifically The method of magnetron sputtering method with reference to Peking University's Wang Wei's thesis for the doctorate " based on the nanowire array structure sun Can battery research " in method, gained TiO2The thickness of thin film is about 5nm.
Embodiment 11
The concrete preparation process of battery is with embodiment 1, and difference is, logical on GZO monocrystalline Cross magnetron sputtering method and prepare one layer of TiO2Thin film formation composite construction is as electric transmission substrate 1, specifically The method of magnetron sputtering method with reference to Peking University's Wang Wei's thesis for the doctorate " based on the nanowire array structure sun Can battery research " in method, gained TiO2The thickness of thin film is about 5nm.
Embodiment 12
The concrete preparation process of battery is with embodiment 1, and difference is, logical on AZO monocrystalline Cross magnetron sputtering method and prepare one layer of TiO2Thin film formation composite construction is as electric transmission substrate 1, specifically The method of magnetron sputtering method with reference to Peking University's Wang Wei's thesis for the doctorate " based on the nanowire array structure sun Can battery research " in method, gained TiO2The thickness of thin film is about 5nm.
After testing, in embodiment 4～embodiment 12, the effective area of gained battery is 0.0725cm2, Photoelectric transformation efficiency is between 6%～7%, and electric current density is at 12mA/cm2～14mA/cm2Between, Open-circuit voltage is between 910mV～916mV, and fill factor, curve factor FF is between 52%～53%.
The above, be only several embodiments of the application, and the application not does any type of limit System, although the application with preferred embodiment disclose as above, but and be not used to limit the application, any Those skilled in the art, in the range of without departing from technical scheme, utilize above-mentioned taking off The technology contents shown makes a little variation or modification is all equal to equivalence case study on implementation, belongs to technology In aspects.

Claims (10)

1. perovskite solaode, including electric transmission substrate, perovskite photoactive layer, hole Transport layer and to electrode, it is characterised in that described electric transmission substrate is selected from Zinc oxide single crystal, miscellaneous former Sub-doping zinc-oxide monocrystalline, surface contain the Zinc oxide single crystal of micro structure, the miscellaneous of micro structure is contained on surface Atom doped Zinc oxide single crystal.
Perovskite solaode the most according to claim 1, it is characterised in that described miscellaneous At least one in group III A metallic element of hetero atom in atom doped Zinc oxide single crystal.
Perovskite solaode the most according to claim 1, it is characterised in that described miscellaneous Atom doped Zinc oxide single crystal is selected from gallium-doped zinc oxide monocrystalline or Al-Doped ZnO monocrystalline.
Perovskite solaode the most according to claim 1, it is characterised in that described table The Heteroatom doping Zinc oxide single crystal of micro structure is contained on Zinc oxide single crystal that micro structure is contained in face and surface In micro structure be micrometer structure and/or nanostructured.
Perovskite solaode the most according to claim 4, it is characterised in that described micro- Rice structure and/or nanostructured are by Zinc oxide single crystal surface or Heteroatom doping Zinc oxide single crystal table Carry out ion etching on face to obtain.
Perovskite solaode the most according to claim 4, it is characterised in that described micro- Rice structure and/or nanostructured are by Zinc oxide single crystal surface or Heteroatom doping Zinc oxide single crystal table Use vapour deposition process and/or magnetron sputtering method to be formed on face and there is micrometer structure and/or nanostructured Zinc oxide, there is the Heteroatom doping zinc oxide of micrometer structure and/or nanostructured, there is micrometer structure And/or the titanium oxide of nanostructured, have in the stannum oxide of micrometer structure and/or nanostructured at least One obtains.
Perovskite solaode the most according to claim 4, it is characterised in that described micro- Rice structure selected from micro wire, micron ball, micron film, micron wall, micro-flowers, micro belt, micron tube, At least one in micron bar, micron membranes.
Perovskite solaode the most according to claim 4, it is characterised in that described in receive Rice structure selected from nano wire, nanosphere, nanometer sheet, nm wall, nano flower, nano belt, nanotube, At least one in nanometer rods, nanometer film.
9. the preparation method of perovskite solaode described in any one of claim 1 to 8, it is special Levy and be, comprise the following steps:
S1, it is provided that electric transmission substrate；
S2, forms perovskite photoactive layer above described electric transmission substrate；
S3, forms hole transmission layer above described perovskite photoactive layer；And
S4, the most square paired electrode.
Preparation method the most according to claim 9, it is characterised in that described in step S1 Electric transmission substrate uses Zinc oxide single crystal；Or
Electric transmission substrate uses Heteroatom doping Zinc oxide single crystal；Or
Electric transmission substrate uses Zinc oxide single crystal-nano-zinc oxide composite material, described Zinc oxide single crystal -nano-zinc oxide composite material is by carrying out chemical gaseous phase formation of deposits tool on Zinc oxide single crystal surface The zinc oxide film having nanostructured obtains；Or
Electric transmission substrate uses Zinc oxide single crystal-micron zinc oxide composite, described Zinc oxide single crystal -micron zinc oxide composite forms micron knot by carrying out ion etching on Zinc oxide single crystal surface Structure obtains；Or
Electric transmission substrate uses Heteroatom doping Zinc oxide single crystal-nanometer Heteroatom doping zinc oxide multiple Condensation material, described Heteroatom doping Zinc oxide single crystal-nanometer Heteroatom doping zinc oxide composite passes through Heteroatom doping Zinc oxide single crystal surface carries out chemical gaseous phase formation of deposits there is nanostructured Heteroatom doping zinc oxide film obtains；Or
Electric transmission substrate uses Heteroatom doping Zinc oxide single crystal-micron Heteroatom doping zinc oxide multiple Condensation material, described Heteroatom doping Zinc oxide single crystal-micron Heteroatom doping zinc oxide composite passes through Heteroatom doping Zinc oxide single crystal surface carries out ion etching formation micrometer structure obtain；Or
Electric transmission substrate uses Zinc oxide single crystal-nano-titanium oxide/stannum oxide composite, described oxygen Change zinc monocrystalline-nano-zinc oxide composite material by using magnetron sputtering method on Zinc oxide single crystal surface Formed and there is the nano-titanium oxide of nanostructured and/or nm tin oxide layer obtains；Or
Electric transmission substrate uses Heteroatom doping Zinc oxide single crystal-nano-titanium oxide/stannum oxide composite wood Material, described Heteroatom doping Zinc oxide single crystal-nano-zinc oxide composite material is by Heteroatom doping oxygen Change and on zinc single-crystal surface, use magnetron sputtering method formation have the nano-titanium oxide of nanostructured and/or receive Rice stannic oxide layer obtains.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108023017A (en) * 2016-11-04 2018-05-11 中国科学院化学研究所 A kind of monocrystal thin films of organo-mineral complexing perovskite material and its preparation method and application
CN113571643A (en) * 2021-06-15 2021-10-29 华东师范大学 Novel organic hole transport layer perovskite solar cell and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100094894A (en) * 2009-02-19 2010-08-27 국민대학교산학협력단 Transparent electrode film or activated layer of organic solar cell composing conductive polymer and composite thin film and, manufacturing method thereof
CN102339954A (en) * 2010-07-20 2012-02-01 海洋王照明科技股份有限公司 Solar cell and preparation method thereof
CN103474574A (en) * 2013-09-26 2013-12-25 天津理工大学 Hybrid solar cell with aluminum-doped zinc oxide nanorod as electron transfer layer
CN103922390A (en) * 2014-04-28 2014-07-16 武汉理工大学 Preparation method of porous zinc oxide monocrystal nanosheet used for photocatalysis
CN105355794A (en) * 2015-10-29 2016-02-24 深港产学研基地 Method for using chemical vapor deposition method to prepare perovskite film solar cell

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100094894A (en) * 2009-02-19 2010-08-27 국민대학교산학협력단 Transparent electrode film or activated layer of organic solar cell composing conductive polymer and composite thin film and, manufacturing method thereof
CN102339954A (en) * 2010-07-20 2012-02-01 海洋王照明科技股份有限公司 Solar cell and preparation method thereof
CN103474574A (en) * 2013-09-26 2013-12-25 天津理工大学 Hybrid solar cell with aluminum-doped zinc oxide nanorod as electron transfer layer
CN103922390A (en) * 2014-04-28 2014-07-16 武汉理工大学 Preparation method of porous zinc oxide monocrystal nanosheet used for photocatalysis
CN105355794A (en) * 2015-10-29 2016-02-24 深港产学研基地 Method for using chemical vapor deposition method to prepare perovskite film solar cell

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108023017A (en) * 2016-11-04 2018-05-11 中国科学院化学研究所 A kind of monocrystal thin films of organo-mineral complexing perovskite material and its preparation method and application
CN108023017B (en) * 2016-11-04 2019-12-27 中国科学院化学研究所 Single crystal film of organic-inorganic composite perovskite material and preparation method and application thereof
CN113571643A (en) * 2021-06-15 2021-10-29 华东师范大学 Novel organic hole transport layer perovskite solar cell and preparation method thereof
CN113571643B (en) * 2021-06-15 2024-04-16 华东师范大学 Novel perovskite solar cell with organic hole transport layer and preparation method thereof

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