CN105280818B - A kind of planar heterojunction perovskite solar cell of stabilization and preparation method thereof - Google Patents
A kind of planar heterojunction perovskite solar cell of stabilization and preparation method thereof Download PDFInfo
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- 230000006641 stabilisation Effects 0.000 title claims abstract description 6
- 238000011105 stabilization Methods 0.000 title claims abstract description 6
- 238000002360 preparation method Methods 0.000 title abstract description 24
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 33
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 8
- 230000005540 biological transmission Effects 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910021389 graphene Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 2
- -1 ITO Chemical compound 0.000 claims description 2
- 229910015711 MoOx Inorganic materials 0.000 claims description 2
- 229910005855 NiOx Inorganic materials 0.000 claims description 2
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000002041 carbon nanotube Substances 0.000 claims description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 2
- 238000004132 cross linking Methods 0.000 claims description 2
- 238000009472 formulation Methods 0.000 claims description 2
- 229910003472 fullerene Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 239000002105 nanoparticle Substances 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 230000009466 transformation Effects 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 30
- 239000000758 substrate Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 5
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 3
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910003087 TiOx Inorganic materials 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000010010 raising Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
- H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
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- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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Abstract
The invention discloses planar heterojunction perovskite solar cell of a kind of stabilization and preparation method thereof, belong to area of solar cell；The solar cell deposits the titanium dioxide nanocrystalline film layer of one layer of low temperature preparation between cathode electrode and electron transfer layer by solwution method, and the film layer can significantly improve the stability of planar heterojunction perovskite solar cell；The planar heterojunction perovskite solar cell photoelectric energy conversion efficiency of the low temperature preparation is high, and stability is good, and decay very little after placing 200 hours in atmosphere, can keep more than the 75% of original photoelectric transformation efficiency；The preparation method of the stable perovskite solar cell is simple, matching printing preparation technology, can extensive use.
Description
Technical field
The present invention relates to planar heterojunction perovskite solar cell of a kind of stabilization and preparation method thereof, belong to solar energy
Field of batteries.
Background technology
The sustainable development of future society will rely on abundant, cheap, environmental protection regenerative resource.The energy used in the world at present
Source more than 85% comes from fossil energy, the problems such as they bring serious pollution environment and air temperature warming.Therefore exploitation can be again
Raw novel energy replaces traditional fossil energy significant.With global economic development, the mankind are to demand for energy
More and more, the estimated mankind of scientist will be up to 15 terawatt (TW) volume energy in the year two thousand fifty energy demand.Solar energy is inexhaustible, uses it
It is inexhaustible.Electric power is produced by endlessly solar energy the best mode that the energy is substitute fossil fuels is provided.Account for now leading
The commercialization silicon solar cell preparation technology of status is complicated, and production cost is high, and the energy recovery cycle is long, hinders it and extensively should
With.Develop cheap, large area, the simple novel solar battery of preparation technology extremely urgent.
The hybrid inorganic-organic perovskite material of developed recently has that good in optical property, mobility be high, carrier diffusion away from
From it is long the features such as, can successfully be applied to solar cell as a preferable photovoltaic material, and obtained rapidly
Development, its energy conversion efficiency from initial 3% lifting to current 20% or so (J.Am.Chem.Soc., 2009,
131,6050；Nature, 2013,499,316；Nature, 2013,501,395；2014,345,542；Science, 2014,
344,458).Moreover, the type solar cell can low temperature preparation, compatible flexible substrate, it is possible to achieve inexpensive, efficient
Volume to volume (roll-to-roll) production technology, as the most potential photovoltaic device of a new generation, has caused solar cell to grind
Study carefully the extensive concern in field, show huge applications prospect, and be possible to fundamentally promote the extensive use of solar cell,
Significant contribution is made for the development and environmental protection of renewable and clean energy resource.
But face one of perovskite solar cell (particularly planar heterojunction perovskite solar cell) is serious
Problem is exactly stability.Perovskite material runs into water and is extremely easy in decomposition, and the performance that device after a period of time is exposed in atmosphere can be bright
It is aobvious to decline.Especially in high humility (＞ 45RH%) environment, the internal efficiency generally at 24 hours will decay more than 50%
More than.Therefore, a kind of method for preparing stable perovskite solar cell efficiently, succinctly, at low cost is sought, will be to calcium titanium
Ore deposit solar cell develops and application is most important.Nanocrystalline (the TiO of Novel Titanium dioxide invented in inventor's early stage2) synthesis
Method and its (CN104103761A on the basis of being applied in polymer solar battery；CN103466696A), the present invention enters
The titanium dioxide nanocrystalline is applied to planar heterojunction perovskite solar cell by one step, significantly improves perovskite solar-electricity
The stability of pond device, and have a good application prospect.
The content of the invention
The present invention is for planar heterojunction perovskite solar cell properties stability in the prior art is poor, the rate of decay is fast
The problems such as, propose stable planar heterojunction perovskite solar cell of a kind of simple in construction, device performance and preparation method thereof.
The invention provides a kind of perovskite solar cell of the planar heterojunction structure of stabilization, in low layer transparent anode
Perovskite planar heterojunction is accompanied between electrode and top layer negative electrode layer, the perovskite planar heterojunction there are three layers, under
To being above followed successively by hole transmission layer, perovskite active layer and electron transfer layer；And in the middle of electron transfer layer and negative electrode layer
There is layer of titanium dioxide nano-crystalline thin film layer；
Planar heterojunction perovskite solar cell bottom electrode of the present invention includes the tin oxide of Fluorin doped
(FTO), tin oxide (ITO), graphene, carbon nanotube layer or the nano silver wire of indium doping.
Planar heterojunction perovskite solar cell hole transmission layer of the present invention includes PEDOT：PSS, P3HT,
PCDTBT, PTB7, MoOx, graphene oxide, NiOx, WO3, V2O5, Spiro-MeOTAD, thin film layer thickness arrives at 30 nanometers
Between 120 nanometers.
Planar heterojunction perovskite solar cell perovskite active layer of the present invention is CH3NH3PbI3,
CH3NH3PbIxBr3-x, CH3NH3PbIxCl3-x, according to the difference of solution manner of formulation, x values are between 1 to 3, thin film layer thickness
Between 200 nanometers to 600 nanometers.
Planar heterojunction perovskite solar cell electron transfer layer of the present invention includes PC60BM, PC70BM,
ICBA, C60And other fullerene derivates, thin film layer thickness is between 30 nanometers to 120 nanometers.
Planar heterojunction perovskite solar cell titanium dioxide nanocrystalline of the present invention is a kind of cross-linking system, tool
There is a good heat endurance, the nano-crystalline thin thicknesses of layers of formation is 5 nanometers to 50 nanometers, can effectively stop oxygen and aqueous vapor
Pass through.
Planar heterojunction perovskite solar cell titanium dioxide nanocrystalline film layer of the present invention passes through solwution method
Prepared by deposition, low temperature (being less than 150 degree) annealing.
Planar heterojunction perovskite solar cell top layer electrode of the present invention includes aluminium, silver, gold, ITO, graphite
Alkene, CNT.
Beneficial effect
Compared with being routinely not added with the planar heterojunction perovskite solar cell of the titanium dioxide nanocrystalline film layer,
The stability of planar heterojunction perovskite solar cell prepared by the method that the present invention is provided is significantly improved, in sky
More than the 75% of original photoelectric transformation efficiency is still maintained after being placed 200 hours in gas.
Brief description of the drawings
【Fig. 1】Insert TiO2Nano-crystalline thin film layer forms stable planar heterojunction perovskite solar battery structure signal
Figure
【Fig. 2】Contain TiO2Nano-crystalline thin film layer and no TiO2The perovskite solar cell device of nano-crystalline thin film layer
The attenuation curve figure of photoelectric transformation efficiency after exposing in atmosphere
Embodiment and embodiment
Implementation below and embodiment are that present invention is further illustrated, rather than limitation protection of the invention
Scope.
Embodiment 1
The present embodiment uses the business ITO substrate patterned.The ITO substrate is used into acetone, detergent, deionized water respectively
It is cleaned by ultrasonic respectively with isopropanol 15 minutes, is then dried under hot blast, finally at UV-ozone machine (UV-Ozone) the inside
Reason 15 minutes.Whole process clean substrate surface, and improve substrate work function.
With 3000rpm speed spin coatings PEDOT in the ITO substrate of processing：PSS materials formation 50nm hole transmission layer,
And in annealing 15 minutes in 150 degree of thermal station.It is then transferred into glove box, is prepared in advance with 5000rpm speed spin coatings
35wt%CH3NH3PbI3Solution is (by CH3NH3I and PbI2Solution is mixedly configured into 1: 1 in DMF solvent, then at room temperature
Stirring 24 hours, obtains CH3NH3PbI3Solution).First low speed spin coating in spin coating process, treats spin coating instrument from accelerating at the uniform velocity rotating
When, a small amount of chlorobenzene is instilled in film surface, then sample is placed in 100 degree of thermal station and annealed 10 minutes, the equal of 290nm thickness is formed
Even CH3NH3PbI3Perovskite active layer.Be subsequently cooled to room temperature, by the PCBM solution for the 15mg/ml being dissolved in anhydrous chlorobenzene with
3000rpm speed is spun on perovskite active layer, and 100 degree are annealed 10 minutes, forms the thick PCBM electron transfer layers of 50nm.So
Afterwards, the titanium dioxide nanocrystalline solution that will be synthesized based on inventor's early stage inventive method (CN104103761A) is with 2500rpm speed
Degree is spun to above PCBM electron transfer layers, forms 20nm titanium dioxide nanocrystalline film layers, and 15 points are handled in 100 degree of thermal station
Clock.Vacuum evaporation instrument is finally transferred to, 4 × 10-4100nm aluminium top electrodes are deposited under Pa vacuum environment, whole calcium titanium is completed
The preparation of ore deposit solar cell.Patent of the present invention contains the planar heterojunction perovskite solar energy of titanium dioxide nanocrystalline film layer
The basic structure of battery device such as Fig. 1.
To the CH of preparation3NH3PbI3Perovskite solar cell is tested, and contains titanium dioxide nanocrystalline film layer
Solar cell, the average open-circuit voltage based on 12 devices is 0.96V, and short circuit current flow is 18.28mA/cm2, fill factor, curve factor is
69%, photoelectric transformation efficiency 12.04%.And the average open-circuit voltage of the reference battery without titanium dioxide nanocrystalline film layer
For 0.92V, short circuit current flow is 18.49mA/cm2, fill factor, curve factor is 66%, photoelectric transformation efficiency 11.19%.It can be found that containing
There is the perovskite solar cell device of titanium dioxide nanocrystalline film layer basic and without titanium dioxide nanocrystalline film layer
Perovskite solar cell device performance is the same, and photoelectric transformation efficiency has a small amount of raisings.Importantly, containing dioxy
The stability for changing the perovskite solar cell device of nanocrystalline Ti film layer is greatly improved, significantly larger than no titanium dioxide
The perovskite solar cell device of nanocrystalline Ti film layer, such as Fig. 2.For the calcium titanium containing titanium dioxide nanocrystalline film layer
Ore deposit solar cell device, even when exposed to 200 hours in air, its photoelectric transformation efficiency also has 9.10%, that is, is maintained at
More than the 75% of starting efficiency.Without the perovskite solar cell device of titanium dioxide nanocrystalline film layer, exposed to sky
Less than 5 hours in gas, its photoelectric transformation efficiency drastically exhaustion, less than 1.0%.Illustrate titanium dioxide nanocrystalline film layer to changing
The stability action of kind planar heterojunction perovskite solar cell properties is clearly, significant.
Based on CH3NH3PbI3Perovskite active layer, using a variety of different hole transmission layers or electron transfer layer, using dioxy
Change nanocrystalline Ti film layer, similar result can be obtained, that is, significantly improve the stable type of perovskite solar cell properties,
Such as following table one.
Table one is based on battery structure " transparent hearth electrode/hole transmission layer/CH3NH3PbI3Perovskite active layer/electronics
A series of perovskite solar cell photoelectric conversion efficiencies prepared by transport layer/titanium dioxide nanocrystalline film layer/Al top electrodes "
And stability data.
Embodiment 2
ITO substrate cleaning, hole transmission layer deposition preparation complete cleaning and hole transmission layer system in reference implementation example 1
It is standby.Active layer material is used to be perovskite CH in the present embodiment3NH3PbIxCl3-x。CH3NH3I、PbI2And PbCl2By 1: 0.7:
0.3 ratio is blended in DMF solution, is configured to 35wt% solution, and is stirred at room temperature 24 hours, is then passed in hole
With 3000rpm speed spin-on deposition films on defeated layer, then sample is placed in 100 degree of thermal station and annealed 15 minutes, 300nm is formed
Thick uniform CH3NH3PbIxCl3-xPerovskite active layer.Then, electron transfer layer deposition preparation, two in reference implementation example 1
TiOx nano polycrystalline thin film layer preparation method, top electrode preparation method, complete the preparation of whole perovskite solar cell.
Device result shows, the CH containing titanium dioxide nanocrystalline film layer3NH3PbIxCl3-xPerovskite solar cell
Device performance and perovskite solar cell device performance without titanium dioxide nanocrystalline film layer are basically identical；Meanwhile, contain
The stability for having the perovskite solar cell device of titanium dioxide nanocrystalline film layer is greatly improved, and does not have significantly larger than
The perovskite solar cell device of titanium dioxide nanocrystalline film layer.
Based on CH3NH3PbIxCl3-xPerovskite active layer, using a variety of different hole transmission layers or electron transfer layer, application
Titanium dioxide nanocrystalline film layer, can significantly improve the stability of perovskite solar cell, such as following table two.
Table two is based on battery structure " transparent hearth electrode/hole transmission layer/CH3NH3PbIxCl3-xPerovskite active layer/
A series of perovskite solar cell photoelectrics conversion prepared by electron transfer layer/titanium dioxide nanocrystalline film layer/Al top electrodes "
Efficiency and stability data.
Embodiment 3
ITO substrate cleaning, hole transmission layer deposition preparation complete cleaning and hole transmission layer system in reference implementation example 1
It is standby.Active layer material is used to be perovskite CH in the present embodiment3NH3PbIxBr3-x。CH3NH3I、PbI2And PbBr2By 1: 0.7:
0.3 ratio is blended in DMF solution, is configured to 35wt% solution, and is stirred at room temperature 24 hours, is then passed in hole
With 3000rpm speed spin-on deposition films on defeated layer, then sample is placed in 100 degree of thermal station and annealed 15 minutes, 320nm is formed
Thick uniform CH3NH3PbIxBr3-xPerovskite active layer.Then, electron transfer layer deposition preparation, two in reference implementation example 1
TiOx nano polycrystalline thin film layer preparation method, top electrode preparation method, complete the preparation of whole perovskite solar cell.
Device result shows, the CH containing titanium dioxide nanocrystalline film layer3NH3PbIxCl3-xPerovskite solar cell
Device performance and perovskite solar cell device performance without titanium dioxide nanocrystalline film layer are basically identical；Meanwhile, contain
The stability for having the perovskite solar cell device of titanium dioxide nanocrystalline film layer is greatly improved, and does not have significantly larger than
The perovskite solar cell device of titanium dioxide nanocrystalline film layer.
Based on CH3NH3PbIxBr3-xPerovskite active layer, using a variety of different hole transmission layers and electron transfer layer, application
Titanium dioxide nanocrystalline film layer, can significantly improve the stability of perovskite solar cell, such as following table three.
Table three is based on battery structure " transparent hearth electrode/hole transmission layer/CH3NH3PbIxBr3-xPerovskite active layer/
A series of perovskite solar cell photoelectrics conversion prepared by electron transfer layer/titanium dioxide nanocrystalline film layer/Al top electrodes "
Efficiency and stability data.
Claims (8)
1. a kind of perovskite solar cell of the planar heterojunction structure of stabilization, its feature is as follows, in bottom transparent anode electricity
Perovskite planar heterojunction is accompanied between pole and top layer cathode electrode, the perovskite planar heterojunction there are three layers, from top to bottom
It is followed successively by hole transmission layer, perovskite active layer and electron transfer layer；And have one in the middle of electron transfer layer and negative electrode layer
Layer titanium dioxide (TiO2) nano-crystalline thin film layer；
2. planar heterojunction perovskite solar cell as claimed in claim 1, it is characterised in that the transparent sun of described bottom
Pole electrode includes the tin oxide (FTO) of Fluorin doped, tin oxide (ITO), graphene, carbon nanotube layer or the silver nanoparticle of indium doping
Line.
3. planar heterojunction perovskite solar cell as claimed in claim 1, it is characterised in that described hole transmission layer
Including PEDOT：PSS, P3HT, PCDTBT, PTB7, MoOx, graphene oxide, NiOx, WO3, V2O5, Spiro-MeOTAD,
Hole transmission layer thin film layer thickness is between 30 nanometers to 100 nanometers.
4. planar heterojunction perovskite solar cell as claimed in claim 1, it is characterised in that described perovskite activity
Layer is CH3NH3PbI3, CH3NH3PbIxBr3-x, CH3NH3PbIxCl3-x, different according to solution manner of formulation, x value is 1 to 3
Between, perovskite active layer thin film layer thickness is between 200 nanometers to 600 nanometers.
5. planar heterojunction perovskite solar cell as claimed in claim 1, it is characterised in that described electron transfer layer
Including PC60BM, PC70BM, ICBA, C60And other fullerene derivates, thin film layer thickness is between 30 nanometers to 120 nanometers.
6. planar heterojunction perovskite solar cell as claimed in claim 1, it is characterised in that described titanium dioxide is received
Meter Jing is a kind of cross-linking system, with good heat endurance, the nano-crystalline thin thicknesses of layers of formation for 5 nanometers to 50 nanometers it
Between, it can effectively stop passing through for oxygen and aqueous vapor.
7. planar heterojunction perovskite solar cell as claimed in claim 1, it is characterised in that described titanium dioxide is received
Rice polycrystalline thin film layer is deposited by solwution method and prepared, and is made annealing treatment under the cryogenic conditions less than 150 degree.
8. planar heterojunction perovskite solar cell as claimed in claim 1, it is characterised in that described top layer negative electrode electricity
Pole includes aluminium, silver, gold, ITO, graphene, CNT.
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