CN102339954A - Solar cell and preparation method thereof - Google Patents
Solar cell and preparation method thereof Download PDFInfo
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Abstract
The invention belongs to the field of solar cells, which discloses a solar cell. The solar cell has the following structure: a conducting layer performing the action of electrodes, a substrate, a nanometer column array formed by a semiconductor compound material, an optical activity material filling material, and a transparent conducting electrode layer and a protective electrode. The invention also discloses a preparation method of the solar cell. The solar cell provided by the invention is characterized in that the short circuit current of the solar cell is increased because of the semiconductor nanometer column array so as to improve the photoelectric conversion efficiency. Meanwhile, because the nanometer column array is filled with an organic active material, the periodic structure forms a photonic crystal structure, sunlight which is too late to be absorbed by the photoactive organic material can be irradiated again on the organic material by the reflecting action of the photonic crystal structure, and adsorption on the sunlight by the organic material is enhanced so as to improve the photoelectric conversion efficiency thereof.
Description
Technical field
The present invention relates to a kind of solar cell, relate in particular to the solar cell that a kind of photoactive layer contains the hybrid structure.The invention still further relates to the preparation method of this solar cell.
Background technology
Fast development along with global economy; The consumption sharp increase of the energy; The flood tide of fossil fuel uses and has not only caused the day by day exhausted of non-renewable resources such as coal, oil, natural gas; Threaten the energy security of human society, and the discharging of great amount of carbon dioxide has also caused serious day by day social environment problem.Under these circumstances, be badly in need of developing not only economic performance but also high clean energy resource.Wherein, that solar energy is regarded as is available, the most promising, one of regenerative resource, causes people's attention.
Advantages such as the scheme of utilizing of solar energy mainly comprises two big types of photo-thermal and photovoltaics, and wherein photovoltaic generation is efficient with it, system succinct, long-life, maintenance are simple enjoy favor, become the mainstream technology that solar energy utilizes.The core parts of photovoltaic generation are solar cells.In the solar cell of numerous kinds, the most ripe with monocrystalline silicon and polysilicon technology, be main flow in the market.But the cost of these solar cells is still higher at present, can only use in some special occasions.Therefore, make solar power generation obtain large-scale promotion, just must improve solar cell efficient, reduce its cost.
The organic solar batteries technology is considered to one of attractive, the most cheap solar battery technology.It is all better on the one hand to be that the synthetic cost of organic material is low, function is easy to modulation, pliability and film forming; The manufacturing process of organic solar batteries need not relate to thin-film technique such as inorganic matter sputter, chemical vapour deposition (CVD), high purity silicon crystal growth preparation, doping and expensive physics or chemical process means on the other hand, can be prone to realize that large tracts of land manufacturing, manufacture process are simple relatively through film techniques such as spin coating or inkjet printings, can use flexible substrate, environmental friendliness, light portable, element manufacturing cost be also lower.Organic solar batteries has important ecology and advantage economically, and its research and development makes the solar cell cost degradation become possibility, becomes the focus of regenerative resource area research, enjoys the concern of academia and industrial circle.
In recent years, along with the continuous exploration to organic solar battery material and device architecture, the efficient of organic solar batteries has reached 6-7%.Yet realize commercialization, the photoelectric conversion efficiency of organic solar batteries is still lower, and the stability of device also awaits further to improve.Cause organic solar batteries photoelectric conversion efficiency main cause on the low side to have: the absorption spectrum and the solar spectrum of conjugated polymer do not match, and be on the low side to the utilance of sunlight; In addition, in the organic solar batteries of body heterojunction type, because heterojunction boundary increases; The exciton that produces behind the active material absorption sunlight can dissociate rapidly and form electronics and hole freely; But compare with inorganic semiconductor, the carrier mobility in the organic substance is relatively low, and most charge carrier does not also have enough time to be transferred to two electrodes of battery; Just taken place compound; So just cause current loss, make the short circuit current of organic solar batteries lower, its photoelectric conversion efficiency is also on the low side.
Summary of the invention
The object of the present invention is to provide a kind of photoactive layer to contain the solar cell of hybrid structure, it can address the above problem.Another object of the present invention is to provide a kind of preparation method of this solar cell.
Technical scheme of the present invention is following:
A kind of solar cell provided by the invention; Has following structure: the conductive layer that has deposited the electrode effect at the basal surface of substrate; Be provided with perpendicular to said substrate top surface and the nano column array that constitutes by compound semiconductor material at the upper surface of said substrate; In the gap of said nano column array, be filled with light active material with height such as said nano-pillar grade; The surface that said nano column array and light active material constitute is provided with the transparency conductive electrode layer, on said transparency conductive electrode laminar surface, is provided with guard electrode.
Said solar cell, wherein, the thickness of said conductive layer is 5-15 μ m; Said guard electrode is wire-grid structure, and the thickness of said aperture plate is 5-10 μ m, and the grid line width is 30-150 μ m, and spacing is 2-3mm; The average diameter of said nano-pillar is 30-1000nm, highly is 100-10000nm, and the intercolumniation spacing is 30-200nm; Said compound semiconductor material and backing material are the nitride based material of III-V family in the periodic table of elements, perhaps Zinc oxide-base material; Said nitride based material is AlN, GaN, InN, AlGaN, InGaN and AlInGaN; Said Zinc oxide-base material is ZnO, In-Zn-O, Al-Zn-O, Ga-Zn-O, Zr-Zn-O, Mg-Zn-O or Si-Zn-O; The material of said conductive layer and the material of guard electrode are aluminium, magnesium, gold, silver etc. and alloy thereof.
Said solar cell, wherein, for being filled in the light active material in the nano column array space, can be for electronics is given, the mixture of acceptor material or for having the material of electron donor-receptor structure in the molecule, as follows:
Electron donor material can be the thiophene-based material, comprising: polymer, as, P3HT, P3OT; Micromolecule or oligomer, as, DCV5T, V5T, 4G1-3S, 3G1-1S; The aromatic amine material, as, TPD, TPA-Th-CN, TCVA; PPV class material, as, PPV, MEH-PPV, MDMO-PPV; The condensed ring aromatic, as, Tetracene, Pentacene, Pe-Th
2Phthalocyanines dye, as, MPc (M is a metal ion, like Cu, Zn etc.), H
2Pc, SubPc (being inferior phthalocyanine material);
Electron acceptor can be fullerene and derivative thereof, as, PCBM (PC
60BM, PC
70BM), ThCBM, PCBB; PPV class material, as, CN-Ether-PPV, MEH-CN-PPV; The condensed ring aromatic, as, PTCBI, PTCDA, BBL etc.;
The material that has electron donor-receptor structure in the molecule is material, the material that contains fluorenes unit and diazosulfide unit, the material that contains carbazole unit and thieno pyrazine unit, the material that contains fluorenes unit and thieno pyrazine unit, the material that contains thiophene unit and pyrrolopyrrole unit that contains carbazole unit and diazosulfide unit, the material that contains thiophene unit and thieno pyrazine unit; As, PCPDTBT, PCDTBT, PDPPBDT etc.
Said solar cell; Wherein, the material of said transparency conductive electrode can be but be not limited to conductive metal oxide film, conducting polymer composite, the preferred conduction metal oxide; As; Indium tin oxide (ITO), fluorine tin-oxide (FTO) or aluminium zinc oxide (AZO) etc., the thickness of said transparency conductive electrode is 80-120nm, transmitance is greater than 80%.
The solar cell of said structure, its preparation method may further comprise the steps:
(1) cleans substrate, make substrate surface clean, increase its surface adhesion force;
(2) at the certain thickness conductive electrode of the backside deposition of above-mentioned substrate; Can but be not limited to methods such as utilizing vacuum vapour deposition, magnetron sputtering method, chemical vapour deposition technique; At the certain thickness metal of the backside deposition of above-mentioned substrate such as aluminium, magnesium, gold, silver and alloy thereof etc.; Under protective atmosphere (oxygen-free environment of forming by nitrogen and/or inert gas), carry out annealing in process then, form the electrode of ohmic contact;
(3) in vacuum chamber, can but be not limited to and adopt chemical vapour deposition (CVD), induce methods such as coupled plasma etching, electron beam exposure, electron beam evaporation, cryogenic vacuum sputter on above-mentioned substrate, to prepare the semiconductor nano-pillar array;
(4) can take vacuum altogether vapor deposition organic photoactive mixtures of material, or with the mixture wiring solution-forming of light active material; Fill it in the space of semiconductor nano-pillar array formation; Carry out means such as plasma treatment again, make and form excellent contact between organic photoactive material and the semiconductor nano-pillar array;
(5) at said structure above-prepared layer of transparent conductive electrode; Like the transparent conductive metal oxide; Can utilize methods such as vacuum vapour deposition, magnetron sputtering method, chemical vapour deposition technique, pulsed laser deposition, preparation layer of transparent conductive metal oxide film;
(6) at said structure above-prepared layer of protecting electrode,, can utilize methods such as silk screen print method, vacuum vapour deposition, at above-mentioned transparency conductive electrode above-prepared metal such as aluminium, magnesium, gold, silver and alloy grid electrode thereof like the metal grid mesh electrode;
(7) with top solar cell annealing in process in inert gas atmosphere, complete.
Solar cell of the present invention has following characteristics:
At first, two types of interfaces that can produce separation of charge are arranged, i.e. interface between interface between the electron donor-acceptor (EDA) material, organic material and the semiconductor nano-pillar in the service area of solar cell; Because the existence of semiconductor nano-pillar array; Can connect the local electric transmission network that electron acceptor material forms effectively; For the transmission of electronics provides direct guiding path, reduce the jump the number of transmissions and the recombination probability of electronics, improve the efficiency of transmission of electronics; The optimization in the increase at exciton dissociation interface and carrier transport path increases the short circuit current of solar cell, and then improves its photoelectric conversion efficiency.
Secondly; Because the material of the preparation nano column array that is elected to be is a polar material; Have very high spontaneous polarization and piezoelectric polarization field intensity along the c direction of principal axis, this strong polarization field can cause interface charge density to improve greatly, and causes the electronics and the space of hole wave function spontaneous effective separation; Utilize its electronics to separate the high open circuit voltage that can form solar cell, thereby improve its photoelectric conversion efficiency with the space of hole under the polarization field effect is spontaneous.
At last; Owing to filled the organic photoactive material in the nano column array; The periodic structure of this kind has formed photon crystal structure; The sunlight that photoactive organic material has little time to absorb can shine through the reflex of photon crystal structure on the organic material again, strengthens the absorption of organic material to sunlight, thereby also can improve its photoelectric conversion efficiency.
In a word, this kind structure can improve the short circuit current and the open circuit voltage of solar cell, and then improves the photoelectric conversion efficiency of solar cell.
Description of drawings
Fig. 1 is the generalized section of solar battery structure;
Wherein, 10 is conductive electrode, and 20 is substrate, and 30 is nano column array, and 40 is light active material, and 50 is transparency conductive electrode, and 60 is guard electrode;
Fig. 2 is the plane graph of transparency conductive electrode and guard electrode;
Wherein, 50 transparency conductive electrodes, 60 is guard electrode.
Embodiment
A kind of solar cell provided by the invention; Has following structure: the conductive layer that has deposited the electrode effect at the basal surface of substrate; Be provided with perpendicular to said substrate and nano column array that form by compound semiconductor material at the upper surface of said substrate; In the gap of said nano column array, be filled with light active material with height such as said nano-pillar grade; Surface in said nano column array and light active material formation is provided with the transparency conductive electrode layer, is provided with guard electrode at said transparency conductive electrode laminar surface.
Said solar cell, wherein, the thickness of said conductive layer is 5-15 μ m; Said guard electrode be wire-grid structure, the thickness of said aperture plate is 5-10 μ m, the grid line width is 30-150 μ m, spacing is 2-3mm; The average diameter of said nano-pillar is 30-1000nm, highly is 100-10000nm, and the intercolumniation spacing is 30-200nm; Said compound semiconductor material and backing material are the nitride based material of III-V family in the periodic table of elements, perhaps Zinc oxide-base material; Said nitride based material is AlN, GaN, InN, AlGaN, InGaN and AlInGaN; Said Zinc oxide-base material is ZnO, In-Zn-O, Al-Zn-O, Ga-Zn-O, Zr-Zn-O, Mg-Zn-O or Si-Zn-O; The material of said conductive layer and the material of guard electrode are aluminium, magnesium, gold, silver etc. and alloy thereof.
Said solar cell, wherein, for being filled in the light active material in the nano column array space, can be for electronics is given, the mixture of acceptor material is the material of electron donor-receptor structure in the molecule perhaps; As follows:
Electron donor material can be the thiophene-based material, comprising: polymer, as, P3HT, P3OT; Micromolecule or oligomer, as, DCV5T, V5T, 4G1-3S, 3G1-1S; The aromatic amine material, as, TPD, TPA-Th-CN, TCVA; PPV class material, as, PPV, MEH-PPV, MDMO-PPV; The condensed ring aromatic, as, Tetracene, Pentacene, Pe-Th
2Phthalocyanines dye, as, MPc (M is a metal ion, like Cu, Zn etc.), H
2Pc, SubPc (being inferior phthalocyanine material);
Electron acceptor can be fullerene and derivative thereof, as, PCBM (PC
60BM, PC
70BM), ThCBM, PCBB; PPV class material, as, CN-Ether-PPV, MEH-CN-PPV; The condensed ring aromatic, as, PTCBI, PTCDA, BBL etc.;
The material that has electron donor-receptor structure in the molecule is material, the material that contains fluorenes unit and diazosulfide unit, the material that contains carbazole unit and thieno pyrazine unit, the material that contains fluorenes unit and thieno pyrazine unit, the material that contains thiophene unit and pyrrolopyrrole unit that contain carbazole unit and diazosulfide unit, contains the material of thiophene unit and thieno pyrazine unit etc.; As, PCPDTBT, PCDTBT, PDPPBDT etc.
Said solar cell; Wherein, the material of said transparency conductive electrode can be but be not limited to conductive metal oxide film, conducting polymer composite, the preferred conduction metal oxide; As; Indium tin oxide (ITO), fluorine tin-oxide (FTO) or aluminium zinc oxide (AZO) etc., the thickness of said transparency conductive electrode is 80-120nm, transmitance is greater than 80%.
The solar cell of said structure, its preparation method may further comprise the steps:
(1) cleans substrate, make substrate surface clean, increase its surface adhesion force;
(2) at the certain thickness conductive electrode of the backside deposition of above-mentioned substrate; Can but be not limited to methods such as utilizing vacuum vapour deposition, magnetron sputtering method, chemical vapour deposition technique; At the certain thickness metal of the backside deposition of above-mentioned substrate such as aluminium, magnesium, gold, silver and alloy thereof etc.; Under protective atmosphere, carry out annealing in process then, form the electrode of ohmic contact;
(3) in vacuum chamber, can but be not limited to and adopt chemical vapour deposition (CVD), induce methods such as coupled plasma etching, electron beam exposure, electron beam evaporation, cryogenic vacuum sputter on above-mentioned substrate, to prepare the semiconductor nano-pillar array;
(4) can take vacuum altogether vapor deposition organic photoactive mixtures of material, or with the mixture wiring solution-forming of light active material; Fill it in the space of semiconductor nano-pillar array formation; Carry out means such as plasma treatment again, make and form excellent contact between organic photoactive material and the semiconductor nano-pillar array;
(5) at said structure above-prepared layer of transparent conductive electrode; Like the transparent conductive metal oxide; Can utilize methods such as vacuum vapour deposition, magnetron sputtering method, chemical vapour deposition technique, pulsed laser deposition, preparation layer of transparent conductive metal oxide film;
(6) at said structure above-prepared layer of protecting electrode,, can utilize methods such as silk screen print method, vacuum vapour deposition, at above-mentioned transparency conductive electrode above-prepared metal such as aluminium, magnesium, gold, silver and alloy grid electrode thereof like the metal grid mesh electrode;
(7) oxygen-free environment (oxygen-free environment of the present invention by nitrogen with or/inert gas atmosphere constitutes) in annealing in process, make solar cell.
Below in conjunction with accompanying drawing, further explain is done in preferred embodiment of the present invention.
Embodiment 1:
(1) the ZnO substrate is 0.5% H at mass percent concentration
2O
2With soak 5min in the mixed solution of ammoniacal liquor earlier, behind the ultrasonic Treatment 10min, clean up the back dry for standby again with deionized water;
(2) utilize chemical vapour deposition technique,, under protective atmosphere, carry out annealing in process 40min, the metallic copper electrode of formation ohmic contact then in 450 ℃ at the thick metallic copper of the backside deposition 10 μ m of above-mentioned substrate;
(3) in vacuum chamber, adopt electron beam evaporation on the ZnO backing material, to prepare the In-Zn-O nano column array, the nano-pillar average diameter is 100nm, highly is 1000nm, the intercolumniation spacing is 100nm;
(4) preparation P3HT and PCBM mass ratio is that 4: 1, mixed uniformly, total concentration are the chlorobenzene solution of 15mg/ml; Mixed solution is filled in the space of semiconductor nano-pillar array formation, makes excellent contact between organic material and the semiconductor nano-pillar array through drying again after the self assembly;
(5) utilizing chemical vapour deposition technique, is 100nm transparent conductive metal oxide AZO thin layer at above-mentioned active layer above-prepared thickness;
(6) utilize silk screen print method, at above-mentioned transparent conductive metal oxide film layer above-prepared alum gate net electrode, the thickness of aperture plate is 8 μ m, and the grid line width is 100 μ m, and spacing is 2mm;
(7) annealing in process in inert gas atmosphere makes solar cell.
Embodiment 2:
(1) the AlN substrate is 0.5% H at mass percent concentration
2O
2With soak 5min in the mixed solution of ammoniacal liquor earlier, behind the ultrasonic Treatment 10min, clean up the back dry for standby again with deionized water;
(2) utilize vacuum vapour deposition,, under protective atmosphere, carry out annealing in process 20min, the metal aluminium electrode of formation ohmic contact then in 350 ℃ at the thick metallic aluminium of the backside deposition 5 μ m of above-mentioned substrate;
(3) in vacuum chamber, adopt on the AlN substrate, to prepare AlN material nano post array from chemical vapour deposition technique, the nano-pillar average diameter is 30nm, highly is 100nm, the intercolumniation spacing is 30nm;
(4) utilizing vacuum vapour deposition method altogether, is 1: 1 with 4G1-3S and PCBM by mass ratio, is filled in the space of semiconductor nano-pillar array formation, carries out means such as plasma treatment again, makes excellent contact between organic material and the semiconductor nano-pillar array;
(5) utilizing vacuum vapour deposition, is 80nm transparent conductive metal oxide ito thin film layer at above-mentioned active layer above-prepared thickness;
(6) utilize silk screen print method, at above-mentioned transparent conductive metal oxide film layer above-prepared silver grid electrode, the thickness of aperture plate is 5 μ m, and the grid line width is 30 μ m, and spacing is 2mm;
(7) annealing in process in nitrogen atmosphere makes solar cell.
Embodiment 3:
(1) the Zr-Zn-O substrate is 0.5% H at mass percent concentration
2O
2With soak 5min in the mixed solution of ammoniacal liquor earlier, behind the ultrasonic Treatment 10min, clean up the back dry for standby again with deionized water;
(2) utilize vacuum vapour deposition,, under protective atmosphere, carry out annealing in process 35min, the magnesium metal electrode of formation ohmic contact then in 300 ℃ at the thick magnesium metal of the backside deposition 8 μ m of above-mentioned substrate;
(3) in vacuum chamber, adopt the cryogenic vacuum sputtering method on the Zr-Zn-O substrate, to prepare Zr-Zn-O material nano post array;
(4) preparation P3HT and PCBM mass ratio is that 1: 4, mixed uniformly, total concentration are the chlorobenzene solution of 30mg/ml; Mixed solution is filled in the space of semiconductor nano-pillar array formation, makes excellent contact between organic material and the semiconductor nano-pillar array through drying again after the self assembly;
(5) utilizing pulsed laser deposition, is 100nm transparent conductive metal oxide ito thin film layer at above-mentioned active layer above-prepared thickness;
(6) utilize vacuum vapour deposition, at above-mentioned transparent conductive metal oxide film layer above-prepared copper alloy grid electrode, the thickness of aperture plate is 5 μ m, and the grid line width is 80 μ m, and spacing is 2.5mm;
(7) annealing in process in inert gas atmosphere makes solar cell.
Embodiment 4:
(1) the AlGaN substrate is 0.5% H at mass percent concentration
2O
2With soak 5min in the mixed solution of ammoniacal liquor earlier, behind the ultrasonic Treatment 10min, clean up the back dry for standby again with deionized water;
(2) utilize magnetron sputtering method,, under protective atmosphere, carry out annealing in process 30min, the argent electrode of formation ohmic contact then in 400 ℃ at the thick argent of the backside deposition 15 μ m of above-mentioned substrate;
(3) in vacuum chamber, adopt and induce the coupled plasma etching method on the AlGaN substrate, to prepare AlGaN material nano post array, the nano-pillar average diameter is 1000nm, highly is 10000nm, the intercolumniation spacing is 200nm;
(4) utilizing vacuum vapour deposition method altogether, is 1: 1 with CuPc and PCBM by mass ratio, is filled in the space of semiconductor nano-pillar array formation, carries out means such as plasma treatment again, makes excellent contact between organic material and the semiconductor nano-pillar array;
(5) utilizing magnetron sputtering method, is 120nm transparent conductive metal oxide FTO thin layer at above-mentioned active layer above-prepared thickness;
(6) utilize vacuum vapour deposition, at above-mentioned transparent conductive metal oxide film layer above-prepared magnesium grid electrode, the thickness of aperture plate is 10 μ m, and the grid line width is 150 μ m, and spacing is 3mm;
(7) annealing in process in inert gas atmosphere makes solar cell.
Embodiment 5:
(1) the InN substrate is 0.5% H at mass percent concentration
2O
2With soak 5min in the mixed solution of ammoniacal liquor earlier, behind the ultrasonic Treatment 10min, clean up the back dry for standby again with deionized water;
(2) utilize vacuum vapour deposition method altogether,, under protective atmosphere, carry out annealing in process 20min, magnesium, the alloy silver electrode of formation ohmic contact then in 350 ℃ at thick magnesium, the silver alloy of the backside deposition 10 μ m of above-mentioned substrate;
(3) in vacuum chamber, adopt and induce the coupled plasma etching method on the InN substrate, to prepare Al-Zn-O material nano post array, the nano-pillar average diameter is 500nm, highly is 5000nm, the intercolumniation spacing is 150nm;
(4) preparation gathers (2-methoxyl group-5-(2 '-ethyl hexyl oxy)-1; 4-is to phenylacetylene) (MEH-PPV is down together) and [6; 6] phenyl-C61-methyl butyrate (PCBM; Down with) amount is than being that 4: 1, mixed uniformly, total concentration are the chlorobenzene solution of 15mg/ml, and mixed solution is filled in the space that the semiconductor nano-pillar array forms, and makes excellent contact between organic material and the semiconductor nano-pillar array through drying after the self assembly again;
(5) utilizing vacuum vapour deposition, is 90nm transparent conductive metal oxide FTO thin layer at above-mentioned active layer above-prepared thickness;
(6) utilize silk screen print method, at above-mentioned transparent conductive metal oxide film layer above-prepared copper grid electrode, the thickness of aperture plate is 6 μ m, and the grid line width is 100 μ m, and spacing is 2.5mm;
(7) annealing in process in inert gas atmosphere makes solar cell.
Embodiment 6:
(1) the InGaN substrate is 0.5% H at mass percent concentration
2O
2With soak 5min in the mixed solution of ammoniacal liquor earlier, behind the ultrasonic Treatment 10min, clean up the back dry for standby again with deionized water;
(2) utilize vacuum vapour deposition,, under protective atmosphere, carry out annealing in process 30min, copper, the aluminum alloy anode of formation ohmic contact then in 400 ℃ at thick copper, the aluminium alloy of the backside deposition 12 μ m of above-mentioned substrate;
(3) in vacuum chamber, adopt the electron beam exposure method on the InGaN substrate, to prepare Zr-Zn-O material nano post array, the nano-pillar average diameter is 800nm, highly is 8000nm, the intercolumniation spacing is 180nm;
(4) preparation MEH-PPV and PCBM mass ratio is that 1: 4, mixed uniformly, total concentration are the chlorobenzene solution of 30mg/ml; Mixed solution is filled in the space of semiconductor nano-pillar array formation; Earlier dry means such as afterwards carrying out plasma treatment, make excellent contact between organic material and the semiconductor nano-pillar array;
(5) utilizing pulsed laser deposition, is 110nm transparent conductive metal oxide AZO thin layer at above-mentioned active layer above-prepared thickness;
(6) utilize silk screen print method, at above-mentioned transparent conductive metal oxide film layer above-prepared magnesium, silver-colored grid electrode, the thickness of aperture plate is 8 μ m, and the grid line width is 120 μ m, and spacing is 2mm;
(7) annealing in process in inert gas atmosphere makes solar cell.
Should be understood that above-mentioned statement to preferred embodiment of the present invention is comparatively detailed, can not therefore think the restriction to scope of patent protection of the present invention, scope of patent protection of the present invention should be as the criterion with accompanying claims.
Claims (10)
1. solar cell; It is characterized in that; This solar cell has following structure: the conductive layer that has deposited the electrode effect at the basal surface of substrate; Be provided with perpendicular to said substrate top surface and the nano column array that constitutes by compound semiconductor material at the upper surface of said substrate; In the gap of said nano column array, be filled with the light active material with height such as said nano-pillar grade, the surface that said nano column array and light active material constitute is provided with the transparency conductive electrode layer, on said transparency conductive electrode laminar surface, is provided with guard electrode.
2. solar cell according to claim 1 is characterized in that, the thickness of said conductive layer is 5-15 μ m; Said guard electrode is wire-grid structure, and the thickness of this aperture plate is 5-10 μ m, and the grid line width is 30-150 μ m, and spacing is 2-3mm.
3. solar cell according to claim 1 is characterized in that, the average diameter of said nano-pillar is 30-1000nm, highly is 100-10000nm, and the intercolumniation spacing is 30-200nm.
4. solar cell according to claim 1 is characterized in that, said compound semiconductor material and backing material are the nitride based material of III-V family in the periodic table of elements, perhaps Zinc oxide-base material; Said nitride based material is AlN, GaN, InN, AlGaN, InGaN and AlInGaN; Said Zinc oxide-base material is ZnO, In-Zn-O, Al-Zn-O, Ga-Zn-O, Zr-Zn-O, Mg-Zn-O or Si-Zn-O.
5. solar cell according to claim 1 is characterized in that, said light active material is the mixture of electron donor material and acceptor material or is the material that has electron donor-receptor structure in the molecule.
6. solar cell according to claim 5 is characterized in that, said electron donor material is the thiophene-based material; Said electron acceptor material is fullerene and derivative thereof; The material that has electron donor-receptor structure in the said molecule is material, the material that contains fluorenes unit and diazosulfide unit, the material that contains carbazole unit and thieno pyrazine unit, the material that contains fluorenes unit and thieno pyrazine unit, the material that contains thiophene unit and pyrrolopyrrole unit that contain carbazole unit and diazosulfide unit, contains the material of thiophene unit and thieno pyrazine unit etc.
7. solar cell according to claim 1 is characterized in that, the material of said transparency conductive electrode layer is conductive metal oxide film or conducting polymer composite; The thickness of said transparency conductive electrode layer is 80-120nm.
8. solar cell according to claim 1 is characterized in that, the material of said conductive layer and the material of guard electrode are aluminium, magnesium, gold, silver etc. and alloy thereof.
9. the preparation method of the arbitrary described solar cell of claim 1 to 8 is characterized in that, comprises the steps:
Play the conductive layer of electrode effect at basal surface deposition one deck of surface-treated substrate;
Upper surface at said substrate forms the nano column array of being made up of compound semiconductor material;
Light active material is filled in the space of said nano column array;
Deposition layer of transparent conductive electrode layer on the upper surface of said nano column array and light active material formation;
Surface deposition guard electrode at said transparency conductive electrode layer;
Annealing in process in inert gas atmosphere makes said solar cell.
10. the preparation method of solar cell according to claim 9 is characterized in that, gets in the preparation process at said conductive layer, also comprises the steps: in oxygen-free environment, and said conductive layer is carried out annealing in process 20～40min in 300～450 ℃.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI464886B (en) * | 2012-04-23 | 2014-12-11 | ||
| CN105043423A (en) * | 2015-07-24 | 2015-11-11 | 宋金会 | Position sensor |
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| CN111613705A (en) * | 2020-04-17 | 2020-09-01 | 南京航空航天大学 | Low-dimensional high-brightness green light emission InGaN-based heterojunction diode and preparation method thereof |
| CN112864328A (en) * | 2021-01-28 | 2021-05-28 | 广西大学 | Ag/C60/P3HT/n-GaN/In planar heterojunction material and preparation method thereof |
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| CN105043423B (en) * | 2015-07-24 | 2018-06-05 | 宋金会 | Position sensor |
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| CN107359247A (en) * | 2017-07-03 | 2017-11-17 | 武汉理工大学 | A kind of ternary system heterojunction structure polymer solar battery efficiently, stable |
| CN107359247B (en) * | 2017-07-03 | 2019-08-02 | 武汉理工大学 | A kind of efficient, stable ternary system heterojunction structure polymer solar battery |
| CN111613705A (en) * | 2020-04-17 | 2020-09-01 | 南京航空航天大学 | Low-dimensional high-brightness green light emission InGaN-based heterojunction diode and preparation method thereof |
| CN112864328A (en) * | 2021-01-28 | 2021-05-28 | 广西大学 | Ag/C60/P3HT/n-GaN/In planar heterojunction material and preparation method thereof |
| CN114540875A (en) * | 2022-01-28 | 2022-05-27 | 华南理工大学 | InGaN/organic heterostructure-based photoelectrode material and preparation method and application thereof |
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