CN105006523A - Iridium complex doped triplet solar cell - Google Patents

Iridium complex doped triplet solar cell Download PDF

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Publication number
CN105006523A
CN105006523A CN201510529524.4A CN201510529524A CN105006523A CN 105006523 A CN105006523 A CN 105006523A CN 201510529524 A CN201510529524 A CN 201510529524A CN 105006523 A CN105006523 A CN 105006523A
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China
Prior art keywords
solar cell
buffer layer
photoactive layer
complex
iridium class
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CN201510529524.4A
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Inventor
于军胜
施薇
黄江
韩世蛟
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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Priority to CN201510529524.4A priority Critical patent/CN105006523A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The present invention discloses an iridium complex doped triplet solar cell, belonging to the field of an organic polymer photovoltaic device or organic semiconductor film solar cell. According to the cell, an inversion type structure is employed, the cell comprises a substrate, a transparent conductive cathode ITO, a cathode buffer layer, a photoactive layer, an anode buffer layer, and a metal anode from bottom to top, and the photoactive layer comprises, by weight, 36-40% of electron donor, 54-59.5% of electron acceptor, and 0.5-10% of iridium complex. The iridium complex material is added into the photoactive layer, by using the phosphorescent effect of the iridium complex, while light is adsorbed, energy is transmitted to the electron donor and the electron acceptor through the energy transmission between a singlet state and a triplet state, exciton generating quantity is raised, the short circuit current density of the device is raised, and the photoelectric conversion performance of the device is finally improved.

Description

The ternary solar cell that iridium class is complex doped
Technical field
The invention belongs to organic polymer photovoltaic device or organic semiconductor thin-film area of solar cell, be specifically related to a kind of organic thin film solar cell.
Background technology
Along with the explosive growth of global energy requirements, energy problem is own through becoming the primary difficult problem that development of all countries economy will face.Because solar energy has cleaning, the feature such as widely distributed, inexhaustible, research photovoltaic generation solves emphasis and the focus that energy problem becomes field of renewable energy research.At present, according to the difference of the material character of the photoactive layer of composition solar cell, active layer material can be divided into inorganic semiconductor material and organic semiconducting materials.Compared with inorganic semiconductor material, the synthesis condition of organic semiconducting materials not only material itself is relative with device process conditions gentle, its molecular structure of chemistry is easily modified, when making battery with it, can meet that cost is low, power consumption less, the requirement of easy large-area manufacturing.From the nineties in 20th century, along with the fast development of thin film technique, the performance of the battery adopting new material new construction new technology to prepare is greatly enhanced.
But, compared with the large-scale production of inorganic solar cell, organic solar batteries due to its photoelectric conversion efficiency also relatively low, it is practical also needs time.The photoactive layer of traditional organic solar batteries is the key determining device photoelectric conversion efficiency.Classical bulk heterojunction structure instead of original double layer heterojunction structure, electron donor is mixed in photoactive layer uniformly with acceptor material, thus increase the contact area of Donor acceptor, for carrier transport provides a large amount of passages, thus improve the photoelectric conversion efficiency of device greatly.
But traditional bulk heterojunction solar cell exists following two large problems: 1, being with of electron donor material is wider, thus the spectral region limiting its absorption cannot cover all band visible ray, thus limits the short-circuit current density of device; 2, there is energy level potential barrier between electron donor and electron acceptor, too high energy level difference limits the efficiency that exciton is separated in Donor acceptor interface, thus limits the fill factor, curve factor of device.
Summary of the invention
Problem to be solved by this invention is: how to provide the ternary solar cell that a kind of iridium class is complex doped, and object is by adding iridium class complex in photoactive layer, to realize: (1) promotes the light abstraction width of photoactive layer; (2) improve exciton in photoactive layer to produce and separative efficiency.
For solving the problem, technical scheme of the present invention is:
The ternary solar cell that iridium class is complex doped, this solar cell adopts reciprocal form structure, is followed successively by from top to bottom: substrate, transparent conductive cathode ITO, cathode buffer layer, photoactive layer, anode buffer layer, metal anode; The percentage by weight of photoactive layer consists of: electron donor 36 ~ 40%, electron acceptor 54 ~ 59.5%, iridium class complex 0.5 ~ 10%.
Further, described iridium class complex is Ir (bt) 2(acac).
Further, in described photoactive layer, electron donor material is P3HT.
Further, in described photoactive layer, electron acceptor material is PC 61bM, or PC 71the one of BM.
Further, described anode buffer layer material is poly-PEDOT:PSS, and anode buffer layer thickness is 15 ~ 50 nm.
Further, described cathode cushioning layer material is TPBi, BCP, Bphen, Alq 3, ZnO or TiO 2one or more, cathode buffer layer thickness range is 1 ~ 20 nm.
Further, described metal anode material is one or more in Ag, Al or Cu, and metal anode thickness is 100 ~ 300 nm.
Further, described backing material is glass or transparent polymer, described transparent polymer material be polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic one or more.
Compared with prior art, the invention has the advantages that:
Differ from the photoactive layer of electron donor and electron acceptor material by introducing absorption bands, thus promote the light abstraction width in photoactive layer, the short-circuit current density of final boost device;
By introducing iridium class complex in bulk heterojunction, by the allochromy of iridium class complex, by the luminous energy of short-wave band that absorbs by the energy transferring between singlet and triplet state to electron donor and acceptor, thus improve the generation efficiency of exciton, improve short-circuit current density and fill factor, curve factor.
Accompanying drawing explanation
Fig. 1 is the complex doped ternary solar battery structure of a kind of iridium class involved in the present invention, is followed successively by from top to bottom: 1 represents substrate, and 2 represent transparent conductive cathode ITO, 3 represent cathode buffer layer, 4 represent photoactive layer, and 5 represent anode buffer layer, and 6 represent metal anode.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
Technical scheme of the present invention is to provide the complex doped ternary solar cell of a kind of iridium class, as shown in Figure 1, the ternary solar cell that a kind of iridium class is complex doped, it is characterized in that: this solar cell adopts reciprocal form structure, is followed successively by from top to bottom: substrate, transparent conductive cathode ITO, cathode buffer layer, photoactive layer, anode buffer layer, metal anode; The percentage by weight of photoactive layer consists of: electron donor 36 ~ 40%, electron acceptor 54 ~ 59.5%, iridium class complex 0.5 ~ 10%.Described iridium class complex is Ir (bt) 2(acac), in described photoactive layer, electron donor material is P3HT, and in described photoactive layer, electron acceptor material is PC 61bM, or PC 71the one of BM, described anode buffer layer material is poly-PEDOT:PSS, and anode buffer layer thickness is 15 ~ 50 nm, and described cathode cushioning layer material is TPBi, BCP, Bphen, Alq 3, ZnO or TiO 2one or more, cathode buffer layer thickness range is 1 ~ 20 nm, described metal anode material is one or more in Ag, Al or Cu, metal anode thickness is 100 ~ 300 nm, described backing material is glass or transparent polymer, described transparent polymer material be polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic one or more.
Embodiment 1(control group):
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface rotary coating ZnO (5000rpm, 40s, 15nm), and formed film is carried out toast (200 DEG C, 60min); Cathode buffer layer adopt spin coating prepare P3HT:PC 61bM (40%:60%) photoactive layer (1000rpm, 25s, 220nm), and carry out toasting (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution prepares anode buffer layer (3000rpm, 60s, 30nm); The mode of Thermostatic platform heating anneal is adopted by substrate to carry out anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.Under standard test condition: AM 1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.56V, short circuit current (J sC)=8.2mA/cm 2, fill factor, curve factor (FF)=0.53, photoelectric conversion efficiency (PCE)=2.43 %.
Embodiment 2:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface rotary coating ZnO (5000rpm, 40s, 15nm), and formed film is carried out toast (200 DEG C, 60min); Cathode buffer layer adopt spin coating prepare P3HT:Ir (bt) 2(acac): PC 61bM (40%:0.5%:59.5%) photoactive layer (1000rpm, 25s, 220nm), and carry out toasting (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution prepares anode buffer layer (3000rpm, 60s, 30nm); The mode of Thermostatic platform heating anneal is adopted by substrate to carry out anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.Under standard test condition: AM 1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.55V, short circuit current (J sC)=8.7mA/cm 2, fill factor, curve factor (FF)=0.54, photoelectric conversion efficiency (PCE)=2.58 %.
Embodiment 3:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface rotary coating ZnO (5000rpm, 40s, 15nm), and formed film is carried out toast (200 DEG C, 60min); Cathode buffer layer adopt spin coating prepare P3HT:Ir (bt) 2(acac): PC 61bM (38%:5%:57%) photoactive layer (1000rpm, 25s, 220nm), and carry out toasting (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution prepares anode buffer layer (3000rpm, 60s, 30nm); The mode of Thermostatic platform heating anneal is adopted by substrate to carry out anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.Under standard test condition: AM 1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.55V, short circuit current (J sC)=10.7mA/cm 2, fill factor, curve factor (FF)=0.63, photoelectric conversion efficiency (PCE)=3.71 %.
Embodiment 4:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface rotary coating ZnO (5000rpm, 40s, 15nm), and formed film is carried out toast (200 DEG C, 60min); Cathode buffer layer adopt spin coating prepare P3HT:Ir (bt) 2(acac): PC 61bM (36%:10%:54%) photoactive layer (1000rpm, 25s, 220nm), and carry out toasting (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution prepares anode buffer layer (3000rpm, 60s, 30nm); The mode of Thermostatic platform heating anneal is adopted by substrate to carry out anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.Under standard test condition: AM 1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.57V, short circuit current (J sC)=8.3mA/cm 2, fill factor, curve factor (FF)=0.55, photoelectric conversion efficiency (PCE)=2.60 %.
Embodiment 5:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface rotary coating ZnO (5000rpm, 40s, 15nm), and formed film is carried out toast (200 DEG C, 60min); Cathode buffer layer adopt spin coating prepare P3HT:Ir (bt) 2(acac): PC 71bM (39.6%:1%:59.4%) photoactive layer (1000rpm, 25s, 220nm), and carry out toasting (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution prepares anode buffer layer (3000rpm, 60s, 30nm); The mode of Thermostatic platform heating anneal is adopted by substrate to carry out anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.Under standard test condition: AM 1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.58V, short circuit current (J sC)=8.8mA/cm 2, fill factor, curve factor (FF)=0.58, photoelectric conversion efficiency (PCE)=2.96 %.
Embodiment 6:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface rotary coating ZnO (5000rpm, 40s, 15nm), and formed film is carried out toast (200 DEG C, 60min); Cathode buffer layer adopt spin coating prepare P3HT:Ir (bt) 2(acac): PC 71bM (37%:6%:57%) photoactive layer (1000rpm, 25s, 220nm), and carry out toasting (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution prepares anode buffer layer (3000rpm, 60s, 30nm); The mode of Thermostatic platform heating anneal is adopted by substrate to carry out anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.Under standard test condition: AM 1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.58V, short circuit current (J sC)=10.8mA/cm 2, fill factor, curve factor (FF)=0.64, photoelectric conversion efficiency (PCE)=4.00 %.
Embodiment 7:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface rotary coating ZnO (5000rpm, 40s, 15nm), and formed film is carried out toast (200 DEG C, 60min); Cathode buffer layer adopt spin coating prepare P3HT:Ir (bt) 2(acac): PC 71bM (36%:10%:54%) photoactive layer (1000rpm, 25s, 220nm), and carry out toasting (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution prepares anode buffer layer (3000rpm, 60s, 30nm); The mode of Thermostatic platform heating anneal is adopted by substrate to carry out anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.Under standard test condition: AM 1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.57V, short circuit current (J sC)=8.9mA/cm 2, fill factor, curve factor (FF)=0.59, photoelectric conversion efficiency (PCE)=2.99%.
Embodiment 8:
The substrate be made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and dries up after cleaning with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface rotary coating ZnO (5000rpm, 40s, 15nm), and formed film is carried out toast (200 DEG C, 60min); Cathode buffer layer adopt spin coating prepare P3HT:Ir (bt) 2(acac): PC 71bM (40%:0.5%:59.5%) photoactive layer (1000rpm, 25s, 220nm), and carry out toasting (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution prepares anode buffer layer (3000rpm, 60s, 30nm); The mode of Thermostatic platform heating anneal is adopted by substrate to carry out anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.Under standard test condition: AM 1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.56V, short circuit current (J sC)=8.5mA/cm 2, fill factor, curve factor (FF)=0.55, photoelectric conversion efficiency (PCE)=2.62 %.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.

Claims (8)

1. the ternary solar cell that iridium class is complex doped, is characterized in that, this solar cell adopts reciprocal form structure, is followed successively by from top to bottom: substrate, transparent conductive cathode ITO, cathode buffer layer, photoactive layer, anode buffer layer, metal anode; The percentage by weight of photoactive layer consists of: electron donor 36 ~ 40%, electron acceptor 54 ~ 59.5%, iridium class complex 0.5 ~ 10%.
2. the ternary solar cell that iridium class according to claim 1 is complex doped, is characterized in that, described iridium class complex is Ir (bt) 2(acac).
3. the ternary solar cell that iridium class according to claim 1 is complex doped, is characterized in that, in described photoactive layer, electron donor material is P3HT.
4. the ternary solar cell that iridium class according to claim 1 is complex doped, is characterized in that, in described photoactive layer, electron acceptor material is PC 61bM or PC 71one in BM.
5. the ternary solar cell that iridium class according to claim 1 is complex doped, is characterized in that, described anode buffer layer material is poly-PEDOT:PSS, and anode buffer layer thickness is 15 ~ 50 nm.
6. the ternary solar cell that iridium class according to claim 1 is complex doped, is characterized in that, described cathode cushioning layer material is TPBi, BCP, Bphen, Alq 3, ZnO or TiO 2in one or more, cathode buffer layer thickness range is 1 ~ 20 nm.
7. the ternary solar cell that iridium class according to claim 1 is complex doped, is characterized in that, described metal anode material is one or more in Ag, Al or Cu, and metal anode thickness is 100 ~ 300 nm.
8. the ternary solar cell that iridium class according to claim 1 is complex doped, it is characterized in that, described backing material is glass or transparent polymer, and described transparent polymer material is one or more in polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic acid.
CN201510529524.4A 2015-08-26 2015-08-26 Iridium complex doped triplet solar cell Pending CN105006523A (en)

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CN108832000A (en) * 2018-06-19 2018-11-16 南京邮电大学 A kind of ter-polymers solar battery

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