CN204905305U - Simplify methylamine bustamentite perovskite battery - Google Patents
Simplify methylamine bustamentite perovskite battery Download PDFInfo
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- CN204905305U CN204905305U CN201520600154.4U CN201520600154U CN204905305U CN 204905305 U CN204905305 U CN 204905305U CN 201520600154 U CN201520600154 U CN 201520600154U CN 204905305 U CN204905305 U CN 204905305U
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- Y02E10/549—Organic PV cells
Abstract
The utility model discloses a simplify methylamine bustamentite perovskite battery, the structure from the top down of battery is base plate layer, transparent electrode layer, N type methylamine bustamentite perovskite thin film layer, P type methylamine bustamentite perovskite thin film layer, rear electrode layer in proper order, the transparent electrode layer is the lower surface that plates on the base plate layer. The utility model discloses the P - N knot that forms between well perovskite semiconductor films is favorable to receiving the effective separation and the transmission of the electron -hole pair of optical excitation production, relies on the long -life carrier of methylamine bustamentite and derivant perovskite semiconductor self simultaneously, can realize the high photoelectric conversion efficiency of battery. Furthermore, the utility model discloses need not to prepare hole transport layer to simplify the preparation technology of current perovskite battery, reduced the preparation cost.
Description
Technical field
The utility model relates to area of solar cell, relates to a kind of simplification methylamine bustamentite perovskite battery specifically.
Background technology
Since two thousand nine start to occur and the one developed rapidly employing methylamine bustamentite (CH
3nH
3pbI
3, being abbreviated as MALI) and perovskite material and derivative thereof are as the brand-new photovoltaic film technology of light absorbing zone, and its adopts low cost film coating manufacturing process, and within the time of a few years, laboratory photoelectric conversion efficiency successfully breaks through 20%.And in the market with the main flow solar cell that silicon and cadmium telluride are material, reach existing transformation efficiency and last more than 10 year.And current research shows perovskite cell conversion efficiency or can up to 50%, be 2 times of solar cell transformation efficiency in the market, significantly can reduce the use cost of solar cell, Given this, photovoltaic industry is generally had an optimistic view of perovskite.
Methylamine bustamentite perovskite battery is made up of substrate, transparency electrode, electron transfer layer, methylamine bustamentite perovskite light absorbing zone, hole transmission layer, rear electrode substantially.Say from structure and can be divided into mesoporous perovskite battery and two kinds, plane perovskite battery.Its intermediary hole perovskite battery needs the titanium deoxid film adding one deck porosity and looseness, ensures that the large area attachment of methylamine bustamentite perovskite material is fully to absorb sunlight.And the light absorbing material of plane perovskite battery is the perovskite thin film of one deck densification, the titanium dioxide layer film without the need to porosity and looseness supports.The battery of two kinds of structures is all use without the intrinsic perovskite semi-conducting material mixed as photovoltaic absorption layer, but not the perovskite semi-conducting material of the P type mixed or N-type.In addition, the organic cavity transmission layer (HTL) in methylamine bustamentite perovskite battery can effective transporting holes, recombinates before electrode after arrival to hinder electronics with hole.But due to high, the expensive and usual performance less stable of organic cavity transmission layer purity requirement, the hole transmission layer simultaneously adopting existing general solwution method to prepare contains pin hole, easily cause the infiltration of moisture and reduce methylamine bustamentite perovskite battery performance, these all cause the increase of methylamine bustamentite perovskite battery cost and the complexity of technique.And for setting up for solar energy farm, require that battery maintains the life-span of more than 30 years in the desert Environment of the large dust storm of high temperature, still there is arduous challenge in visible existing perovskite battery.
A kind of methylamine bustamentite perovskite battery of recent report can avoid use expensive, unstable and the hole transmission layer of complex process, it has attached one deck zirconia (zirconiumoxide) in titanium oxide film layer, this layer of zirconia can hinder the restructuring after arrival before electrode of electronics and hole, plays the effect that same hole transmission layer is the same.But this battery also needs the cation adding 5-aminovaleric acid to reinforce the contact of itself and loose titanium oxide film layer in preparation process, makes battery preparation technique still complicated.And adopt the perovskite cell photoelectric efficiency prepared in this way and be only 11.6%, far below the methylamine bustamentite perovskite battery of existing band hole transmission layer.
Fig. 1 is methylamine bustamentite perovskite battery structure figure of the prior art.The structure of this battery is from being substrate layer 1 successively under upper, being plated in the indium tin oxide (ITO) of substrate layer 1 lower surface or fluorine doped tin oxide (FTO) layer 2, electron transfer layer 3(as TiO
2), methylamine bustamentite perovskite absorbed layer 4, hole transmission layer 5(be as spiro-OMeTAD), rear electrode layer 6(is as gold or silver).Each thicknesses of layers of battery is respectively: transparency electrode 2 is about 0.2 μm, and electron transfer layer 3 is between 0.5 ~ 2.0 μm, and methylamine bustamentite perovskite absorbed layer 4 is about 0.3 μm, and hole transmission layer 5 is about 0.3 μm, and rear electrode 6 is about 0.1 μm.
In sum, the preparation of existing methylamine bustamentite perovskite battery almost be unable to do without and uses hole transmission layer or add other rete, to hinder the restructuring in electronics and hole (although compared to other photovoltaic material, the carrier lifetime of methylamine bustamentite perovskite is longer, electronics and cavity energy maintain long released state), this can be all very unfavorable to reduction perovskite battery preparation cost and raising perovskite stability test, urgently finds new solution.
Utility model content
For deficiency of the prior art, the technical problems to be solved in the utility model there are provided a kind of simplification methylamine bustamentite perovskite battery.
For solving the problems of the technologies described above, the utility model is realized by following scheme: a kind of simplification methylamine bustamentite perovskite battery, the structure of described battery is followed successively by substrate layer, transparent electrode layer, N-type methylamine bustamentite perovskite thin film layer, P type methylamine bustamentite perovskite thin film layer, rear electrode layer from top to bottom, and described transparent electrode layer is the lower surface being plated in substrate layer.
Further, described transparency electrode layer thickness is about 0.2 μm, and the thickness of N-type methylamine bustamentite perovskite thin film layer is between 0.1 ~ 1.0 μm, and the thickness of P type methylamine bustamentite perovskite thin film layer is between 0.5 ~ 200 μm, and the thickness of rear electrode layer is about 0.1 μm.
Further, described transparent electrode layer is FTO or ITO, also can substitute with the transparent membrane of other high light permeable rate, high conductivity.
Further, described substrate layer is glassy layer or flexible polymer skin or sheet-metal layers.
Further, described rear electrode layer can substitute by gold electrode or silver electrode.
Further, the material of described rear electrode layer can substitute with arbitrary nanoparticle electric conducting material, carbonaceous conductive material, consumption microtubule material, grapheme material.
Relative to prior art, the beneficial effects of the utility model are: by preparation P-N type methylamine bustamentite perovskite semi-conductor cell, battery structure is simplified, thus simplifies the preparation technology of battery, reduce the preparation cost of battery; The methylamine bustamentite perovskite battery of simultaneously this simplification avoids the complicated process of preparation of hole transmission layer, unstable properties and the shortcoming such as expensive; And by the formation of methylamine bustamentite perovskite P-N junction and the long-life charge carrier of methylamine bustamentite perovskite semiconductor self, high photoelectric conversion efficiency can be realized.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is methylamine bustamentite perovskite battery structure figure of the prior art.
Fig. 2 is that the utility model simplifies methylamine bustamentite perovskite battery structure schematic diagram.
Mark in accompanying drawing: substrate layer 1, transparency electrode 2, electron transfer layer 3, methylamine bustamentite perovskite absorbed layer 4, hole transmission layer 5, rear electrode layer 6, N-type methylamine bustamentite perovskite thin film layer 7, P type methylamine bustamentite perovskite thin film layer 8.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present utility model is described in detail, to make advantage of the present utility model and feature can be easier to be readily appreciated by one skilled in the art, thus more explicit defining is made to protection range of the present utility model.
Existing methylamine bustamentite perovskite battery be use without the intrinsic perovskite semi-conducting material mixed as photovoltaic absorption layer, need electron transfer layer and hole transmission layer to hinder the restructuring of electron-hole pair further, to obtain higher photoelectric conversion efficiency.But there are some researches show, the methylamine bustamentite perovskite semiconductor of P type or N-type can be obtained by carrying out different faultiness designs to methylamine bustamentite perovskite material, as P type methylamine bustamentite perovskite semiconductor can be obtained by manufacturing lead vacancy defect, N-type methylamine bustamentite perovskite can be obtained by manufacture methylamine functional group space and partly leading.Wherein the energy level of lead vacancy is positioned at 0.2eV place above valence band, the energy level of space methylamine functional group is positioned at 0.05eV place below conduction band, the energy level of these defects (lead vacancy or methylamine functional group space) is very near the edge of conduction band or valence band, instead of be positioned at band gap deep layer, so the restructuring of electron-hole pair can not be caused.This P-N type methylamine bustamentite perovskite battery not containing electron transfer layer or hole transmission layer for preparation provides theoretical foundation.
Because P type methylamine bustamentite perovskite semiconductor needs lead vacancy, so the consumption preparing lead iodide in solution by reducing methylamine bustamentite perovskite realizes.In like manner, N-type methylamine bustamentite perovskite semiconductor needs methylamine functional group space, and a large amount of methylpyridinium iodide amine can be adopted forcibly to allow methyl amine functional group playback in clearance position; Or use methylamine gas, use hydrogen to prepare under the air of 1.1Pa simultaneously, forcibly allow methyl amine functional group playback in clearance position.In addition, N-type is mixed can also by changing cationic valence to regulate and control, lead is replaced as used three-group metal element (as aluminium, gallium, indium or boron), such employing trivalent metal atom substitutes divalence lead atom, atom outermost electron track charge number can be made to reduce thus realize N-type and mix.
Please refer to accompanying drawing 2, one of the present utility model simplifies methylamine bustamentite perovskite battery, and the structure of described battery is followed successively by substrate layer 1, transparency electrode 2, N-type methylamine bustamentite perovskite thin film layer 7, P type methylamine bustamentite perovskite thin film layer 8, rear electrode layer 6 from top to bottom.Described transparency electrode 2 is the lower surfaces being plated in substrate layer 1.Described transparency electrode 2 thickness is about 0.2 μm, and the thickness of N-type methylamine bustamentite perovskite thin film layer 7 is between 0.1 ~ 1.0 μm, and the thickness of P type methylamine bustamentite perovskite thin film layer 8 is between 0.5 ~ 200 μm, and the thickness of rear electrode layer 6 is about 0.1 μm.Described transparency electrode 2 can be the transparent thin film layer of any one high light permeable rate, high conductivity, described substrate layer 1 is glassy layer or flexible polymer skin or sheet-metal layers, described rear electrode layer 6 is gold electrode or silver electrode, and described rear electrode 6 can substitute with arbitrary nanoparticle electric conducting material, carbonaceous conductive material, consumption microtubule material, grapheme material.
embodiment 1:
In the utility model, the conduction band positions of P type methylamine bustamentite perovskite semiconductor is compared with adjacent rear electrode, will low 0.0 ~ 0.3eV, the valence band location of N-shaped methylamine bustamentite perovskite semiconductor, compared with contiguous transparency electrode, high 0.0 ~ 0.2eV, effectively can be prevented the compound in electronics and hole.Simplification methylamine bustamentite perovskite battery of the present utility model, the energy gap of its methylamine bustamentite perovskite semiconductor is 1.52eV, is a kind of direct gap semiconductor.The one that the utility model proposes simplifies methylamine bustamentite perovskite battery, adopt the P type and N-type methylamine bustamentite perovskite semi-conducting material that mix, form the plane methylamine bustamentite perovskite battery structure of P-N junction, be conducive to effective separation and the transmission of the electron-hole pair produced by optical excitation, rely on the long-life charge carrier of methylamine bustamentite perovskite semiconductor self can realize high photoelectric conversion efficiency simultaneously.And it does not need electron transfer layer and hole transmission layer, the complicated process of preparation of hole transmission layer, unstable properties and the shortcoming such as expensive effectively can be avoided.
embodiment 2:
The utility model proposes a kind of methylamine bustamentite perovskite battery of simplification, be equally applicable to derivative perovskite battery.Comprise each analog derivative perovskite battery partly or entirely substituting methylamine functional group or metallic lead or halogen iodine, as used other organo-functional group R.NH
3.PbI
3or HC (NH
2)
2pbI
3etc. alternative methylamine functional group, or use tin or all or part of replacement lead of tungsten, or use other halogen (as chlorine, bromine or fluorine) all or part of replacement iodine.And above-mentioned all P-N junction methylamine bustamentite perovskites and the solar cell of derivative thereof, be not only limited to single celled solar battery structure, can be used for the batch production of the only block of large area yet.
embodiment 3:
A kind of simplify methylamine bustamentite perovskite battery, from being glass substrate layer successively under upper, being plated in glass substrate lower surface FTO, N-type methylamine bustamentite perovskite thin film layer, P type methylamine bustamentite perovskite thin film layer, gold electrode layer.FTO thickness is 0.2 μm, and N-type methylamine bustamentite perovskite thin film layer thickness is 0.2 μm (this thickness is the most favourable to electric transmission), and P type methylamine bustamentite perovskite thin film layer thickness is 1.5 μm, and gold electrode layer thickness is 0.1 μm.
Gold electrode layer can adopt the preparation of the method such as sputtering, evaporation, P type and N-type methylamine bustamentite calcium titanium semiconductive thin film preparation technology varied, as spin-coating method, sputtering method, ion implantation etc.Because the crystal phase structure of perovskite thin film can change along with the change of temperature and exposure degree, so methylamine bustamentite perovskite and derivative semiconductive thin film thereof easily exist different crystal phase structures, the generation of film defects may be caused.Light absorbing zone film prepared by spin-coating method can not produce luminescence generated by light phenomenon, shows do not have atom defect center in the band gap of film, and based on this, visible spin-coating method is very suitable for preparing perovskite absorbed layer.
The concrete steps adopting spin-coating method to prepare P type methylamine bustamentite calcium titanium semiconductive thin film are: uses 60 DEG C, the 100 μ L concentration lead iodide N that is 0.5M, N-dimethylformamide solution, in 3000r/min, spin under 15 seconds, substrate plates bustamentite; Then 1min in the iodine methylamine solution substrate of good for spin coating bustamentite being immersed in 70 DEG C, then with isopropyl alcohol cleaning, then nitrogen dries up.Wherein the solvent of iodine methylamine solution be 60 DEG C, the isopropyl alcohol of 100mg/ml.The concrete steps adopting spin-coating method to prepare N-type methylamine bustamentite calcium titanium semiconductive thin film are: 65 DEG C, 100 μ L concentration are the lead iodide N of 1M, and N-dimethylformamide solution, at 3000r/min, spins under 15 seconds, substrate plates bustamentite; Then 5min in the iodine methylamine solution substrate of good for spin coating bustamentite being immersed in 80 DEG C, then with isopropyl alcohol cleaning, then nitrogen dries up.Wherein the solvent of iodine methylamine solution be 60 DEG C, the isopropyl alcohol of 100mg/ml.
When adopting above-mentioned spin-coating method to prepare P type or N-type methylamine bustamentite calcium titanium semiconductive thin film, all can add the lead chloride of 20% weight ratio or lead bromide or lead fluoride to increase chlorine or bromine or fluorine ion by bustamentite when first step spin coating.
Above-mentioned spin coating is adopted to send out the P type methylamine bustamentite perovskite semiconductor of preparation, the low 0.1eV of conduction band positions of its conduction band positions gold electrode adjacent with it; Adopt above-mentioned spin coating to send out the N-type methylamine bustamentite perovskite semiconductor of preparation, its valence band location is close to the mutually high 0.01eV of valence band location of FTO film with its.Effective separation and the fast transport of electron-hole pair in P-N junction methylamine bustamentite calcium titanium battery under illumination can be realized.
embodiment 4:
A kind of simplify methylamine bustamentite perovskite battery, from being glass substrate layer successively under upper, being plated in ITO, N-type methylamine bustamentite perovskite thin film layer, P type methylamine bustamentite perovskite thin film layer, the silver electrode layer of glass substrate lower surface.ITO thickness is 0.2 μm, and N-type methylamine bustamentite perovskite thin film layer thickness is 0.2 μm (this thickness is the most favourable to electric transmission), and P type methylamine bustamentite perovskite thin film layer thickness is 1.2 μm, and silver electrode layer thickness is 0.1 μm.
The concrete steps adopting spin-coating method to prepare P type methylamine bustamentite calcium titanium semiconductive thin film are: uses 65 DEG C, the 100 μ L concentration lead iodide N that is 0.6M, N-dimethylformamide solution, in 3000r/min, spin under 15 seconds, substrate plates bustamentite; Then 2min in the iodine methylamine solution substrate of good for spin coating bustamentite being immersed in 70 DEG C, then with isopropyl alcohol cleaning, then nitrogen dries up.Wherein the solvent of iodine methylamine solution be 60 DEG C, the isopropyl alcohol of 100mg/ml.
The concrete steps of preparation N-type methylamine bustamentite calcium titanium semiconductive thin film are: 60 DEG C, 100 μ L concentration are the lead iodide N of 1M, and N-dimethylformamide solution, at 3000r/min, spins under 15 seconds, substrate plates bustamentite; Then, under the methylamine gas substrate of good for spin coating bustamentite being placed in 1.1Pa and hydrogen, 3min in the iodine methylamine solution being immersed in 60 DEG C, can forcibly allow methyl amine functional group playback in clearance position, then with isopropyl alcohol cleaning, then nitrogen dries up.Wherein the solvent of iodine methylamine solution be 60 DEG C, the isopropyl alcohol of 100mg/ml.
When adopting above-mentioned spin-coating method to prepare P type or N-type methylamine bustamentite calcium titanium semiconductive thin film, all can add the lead chloride of 20% weight ratio or lead bromide or lead fluoride to increase chlorine or bromine or fluorine ion by bustamentite when first step spin coating.
Above-mentioned spin coating is adopted to send out the P type methylamine bustamentite perovskite semiconductor of preparation, the low 0.05eV of conduction band positions of its conduction band positions and its adjacent silver electrode; Above-mentioned spin coating is adopted to send out the N-type methylamine bustamentite perovskite semiconductor of preparation, the mutually high 0.08eV of valence band location of its valence band location and its adjacent I TO film.Effective separation and the fast transport of electron-hole pair in P-N junction methylamine bustamentite calcium titanium battery under illumination can be realized.
embodiment 5:
For manufacture P-N junction methylamine bustamentite perovskite battery, three-group metal element (as aluminium, gallium, indium and boron etc.) can be mixed at the upper epidermis of P type methylamine bustamentite perovskite semiconductor film and convert thereof into n type material, evaporation or the technique such as sputtering and annealing specifically can be adopted to add a small amount of above metallic element and mix.Similarly, the halogen compounds of three-group metal element (as aluminium, gallium, indium and boron etc.) can be mixed with identical technique.And three-group metal element easily mixes lead vacancy place.
Adopt extension coating method at this, carry out mixing formation P-N homojunction at the upper epidermis of P type methylamine bustamentite perovskite semiconductor film, the differences between lattice constant of the semiconductor film of formation is less than 10%, can realize the object preventing P-N junction chain rupture.
A kind of simplify methylamine bustamentite perovskite battery, from being glass substrate layer successively under upper, being plated in FTO stannic oxide layer, N-type methylamine bustamentite perovskite thin film layer, P type methylamine bustamentite perovskite thin film layer, the gold electrode layer of glass substrate lower surface doped with fluorine.The thickness of FTO stannic oxide layer is 0.2 μm, and N-type methylamine bustamentite perovskite thin film layer thickness is 0.2 μm (this thickness is the most favourable to electric transmission), and P type methylamine bustamentite perovskite thin film layer thickness is 1.2 μm, and gold electrode layer thickness is 0.1 μm.
The concrete steps adopting spin-coating method to prepare P type methylamine bustamentite calcium titanium semiconductive thin film are: uses 65 DEG C, the 100 μ L concentration lead iodide N that is 0.6M, N-dimethylformamide solution, in 3000r/min, spin under 15 seconds, substrate plates bustamentite; Then 2min in the iodine methylamine solution substrate of good for spin coating bustamentite being immersed in 70 DEG C, then with isopropyl alcohol cleaning, then nitrogen dries up.Wherein the solvent of iodine methylamine solution be 60 DEG C, the isopropyl alcohol of 100mg/ml.
The metallic aluminium (gallium, indium and boron etc. can) mixing and have low concentration (0.0015M) is used at the upper epidermis of the P type methylamine bustamentite perovskite semiconductor film prepared, (50 ~ 90 DEG C) heating 10 ~ 30min at low temperatures, preferably at 60 DEG C, heat 20min, obtain P-N junction methylamine bustamentite perovskite battery.
When adopting above-mentioned spin-coating method to prepare P type methylamine bustamentite calcium titanium semiconductive thin film, the lead chloride of 20% weight ratio or lead bromide or lead fluoride can be added to increase chlorine or bromine or fluorine ion by bustamentite when first step spin coating.
The P-N junction methylamine bustamentite perovskite battery adopting above-mentioned spin-coating method to prepare, its energy gap is 1.5eV.The low 0.1eV of conduction band positions of the conduction band positions gold electrode adjacent with it of P type methylamine bustamentite perovskite semiconductor, the valence band location of N-type methylamine bustamentite perovskite semiconductor and the mutually high 0.05eV of valence band location of its contiguous FTO film.Effective separation and the fast transport of electron-hole pair in P-N junction methylamine bustamentite calcium titanium battery under illumination can be realized.
embodiment 6:
P type methylamine bustamentite perovskite thin film and N-type methylamine bustamentite perovskite thin film can use sputtering technology to prepare.For P type methylamine bustamentite perovskite thin film, adopt the methylamine bustamentite perovskite solution of a small amount of lead iodide to glue in its preparation of target materials and clay into power, this mixture of powders vacuum cold compaction or hot pressing are formed.Equally, the preparation of N-type methylamine bustamentite perovskite semiconductor target can first be clayed into power with gluing together with the halogen compounds of the perovskite solution of ginseng aluminium and aluminium chloride or three-group metal element (comprising indium, gallium and boron), this mixture of powders vacuum cold compaction or hot pressing is formed.
Sputtering mode can be radio frequency sputtering, comprises magnetron RF sputtering system mode that is fixing or movement, also can use DC pulse sputtering prepare conductivity suitable mix perovskite semiconductor.
embodiment 7:
Mix methylamine bustamentite perovskite semiconductor can also use the method for ion implantation to prepare.Ion implantation is usually used in the inorganic semiconductor of silicon one class, but also has in recent years for preparing organic material.The method of ion implantation can be used at room temperature to prepare and to mix hybrid inorganic-organic methylamine bustamentite perovskite semiconductor film, can be passed through subsequent anneal to make up lattice damage.
Simultaneously for the P-N junction methylamine bustamentite perovskite battery prepared; can with reference to the encapsulation technology of conventional solar energy and flat panel display; the chemical attack of air is subject to prevent each film in battery; it is protection organic-inorganic material rete of the present invention simultaneously; prevent moisture and oxygen invasion and attack, separately need add cover glass.
The foregoing is only preferred implementation of the present utility model; not thereby the scope of the claims of the present utility model is limited; every utilize the utility model specification and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical field, be all in like manner included in scope of patent protection of the present utility model.
Claims (7)
1. one kind simplifies methylamine bustamentite perovskite battery, it is characterized in that: the structure of described battery is followed successively by substrate layer (1), transparent electrode layer (2), N-type methylamine bustamentite perovskite thin film layer (7), P type methylamine bustamentite perovskite thin film layer (8), rear electrode layer (6) from top to bottom, and described transparent electrode layer (2) is the lower surface being plated in substrate layer (1).
2. one according to claim 1 simplifies methylamine bustamentite perovskite battery, it is characterized in that: described transparent electrode layer (2) thickness is about 0.2 μm, the thickness of N-type methylamine bustamentite perovskite thin film layer (7) is between 0.1 ~ 1.0 μm, the thickness of P type methylamine bustamentite perovskite thin film layer (8) is between 0.5 ~ 200 μm, and the thickness of rear electrode layer (6) is about 0.1 μm.
3. one according to claim 1 simplifies methylamine bustamentite perovskite battery, it is characterized in that: described transparent electrode layer (2) is FTO or ITO.
4. one according to claim 3 simplifies methylamine bustamentite perovskite battery, it is characterized in that: described transparent electrode layer (2) can substitute with the transparent membrane of any high light permeable rate, high conductivity.
5. one according to claim 1 simplifies methylamine bustamentite perovskite battery, it is characterized in that: described substrate layer (1) is glassy layer or flexible polymer skin or sheet-metal layers.
6. one according to claim 1 simplifies methylamine bustamentite perovskite battery, it is characterized in that: described rear electrode layer (6) is gold electrode or silver electrode.
7. one according to claim 6 simplifies methylamine bustamentite perovskite battery, it is characterized in that: the available arbitrary nanoparticle electric conducting material of described rear electrode layer (6), carbonaceous conductive material, consumption microtubule material, grapheme material substitute.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449986A (en) * | 2016-10-26 | 2017-02-22 | 宁波大学 | A perovskite solar cell and a manufacturing method thereof |
| CN107768523A (en) * | 2017-12-07 | 2018-03-06 | 湖南师范大学 | A kind of homojunction perovskite thin film solar cell and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449986A (en) * | 2016-10-26 | 2017-02-22 | 宁波大学 | A perovskite solar cell and a manufacturing method thereof |
| CN107768523A (en) * | 2017-12-07 | 2018-03-06 | 湖南师范大学 | A kind of homojunction perovskite thin film solar cell and preparation method thereof |
| CN107768523B (en) * | 2017-12-07 | 2024-03-05 | 湖南师范大学 | Homogeneous junction perovskite thin film solar cell and preparation method thereof |
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