CN107709609B - 布线图案的制造方法、导电膜的制造方法以及晶体管的制造方法 - Google Patents

布线图案的制造方法、导电膜的制造方法以及晶体管的制造方法 Download PDF

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CN107709609B
CN107709609B CN201680036188.2A CN201680036188A CN107709609B CN 107709609 B CN107709609 B CN 107709609B CN 201680036188 A CN201680036188 A CN 201680036188A CN 107709609 B CN107709609 B CN 107709609B
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manufacturing
base layer
wiring pattern
layer
substrate
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CN107709609A (zh
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小泉翔平
川上雄介
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Nikon Corp
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  • Ceramic Engineering (AREA)
  • Dispersion Chemistry (AREA)
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  • Chemically Coating (AREA)
  • Thin Film Transistor (AREA)
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Abstract

本发明的课题在于提供一种在不采用剥离处理的情况下通过无电解镀覆得到布线图案的技术。本发明的布线图案的制造方法的特征在于，其具有下述工序：基底层形成工序，形成包含无电解镀覆用催化剂和树脂的基底层；表层除去工序，除去上述基底层的表层的至少一部分；以及镀覆层形成工序，进行无电解镀覆，在进行了上述表层除去工序的基底层上形成镀覆层。

Description

布线图案的制造方法、导电膜的制造方法以及晶体管的制造 方法
技术领域
本发明涉及布线图案的制造方法、导电膜的制造方法以及晶体管的制造方法。本发明要求2015年8月19日申请的申请号2015-161699的日本专利申请的优先权，对于认可基于文献参照方式的编入的指定国，通过参照方式将该申请记载的内容编入本申请中。
背景技术
已知有在制造布线图案时使用无电解镀覆的方法(例如，专利文献1)。
现有技术文献
专利文献
专利文献1：日本特开2009-224705号公报
发明内容
发明所要解决的课题
但是，在现有的方法中使用抗蚀剂材料并通过剥离处理形成布线图案，因而形成在要除去的抗蚀剂上的布线材料会与抗蚀剂一起被废弃掉。
本发明的课题在于提供一种在不采用剥离处理的情况下通过无电解镀覆得到布线图案的技术。
用于解决课题的手段
本发明的方式涉及一种布线图案的制造方法，其特征在于，其具有下述工序：基底层形成工序，形成包含无电解镀覆用催化剂和树脂的基底层；表层除去工序，除去上述基底层的表层的至少一部分；以及镀覆层形成工序，进行无电解镀覆，在进行了上述表层除去工序的基底层上形成镀覆层，所述树脂的前体为水溶性的。
另外，本发明的其他方式涉及一种导电膜的制造方法，其特征在于，利用上述的布线图案的制造方法来进行制造。
另外，本发明的其他方式涉及一种包含栅极、源极、漏极、半导体层和栅极绝缘层的晶体管的制造方法，其特征在于，上述栅极、上述源极和上述漏极中的至少一者利用上述的布线图案的制造方法来进行制造。
附图说明
图1是用于说明第1实施方式的布线图案的制造方法的一例的截面图。
图2是用于说明第2实施方式的晶体管的制造方法的一例的截面图(其一)。
图3是用于说明第2实施方式的晶体管的制造方法的一例的截面图(其二)。
图4是示出第3实施方式的晶体管的一例的图。
图5是用于说明第4实施方式的晶体管的制造方法的一例的截面图(其一)。
图6是用于说明第4实施方式的晶体管的制造方法的一例截面图(其二)。
图7是用于说明第4实施方式的晶体管的制造方法的一例的截面图(其三)。
图8是示出实施例1中的镀覆基底层的光学显微镜像的图。
图9是示出实施例1中的镀覆布线部的光学显微镜像的图。
图10是示出比较例1中的镀覆布线部的光学显微镜像的图。
图11是示出实施例2中的镀覆布线部的光学显微镜像的图。
图12是示出实施例3中的基板和栅极的光学显微镜像的图。
图13是示出实施例3中的形成绝缘体层后的基板和该基板的光学显微镜像的图。
图14是示出实施例3中的形成源极-漏极后的基板和电极的光学显微镜像的图。
图15是示出实施例3中的形成有机半导体层后的基板和该基板的光学显微镜像的图。
图16是示出实施例3中的晶体管的特性评价的图。
具体实施方式
<第1实施方式>
以下参照附图对本发明的实施方式的一例进行说明。
图1是用于说明第1实施方式的布线图案的制造方法的一例的截面图。
(第1工序)
首先准备基板1。基板1可以使用通常使用的基板材料。例如可以使用玻璃、聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚醚砜(PES)、聚醚酰亚胺、聚醚醚酮、聚苯硫醚、聚芳酯、聚酰亚胺、聚碳酸酯(PC)、三乙酸纤维素(TAC)、乙酸-丙酸纤维素(CAP)等。
另外，准备镀覆基底层溶液11A。镀覆基底层溶液11A是将感光性树脂的前体和作为无电解镀覆用催化剂的金属颗粒分散在溶剂中而成的溶液。无电解镀覆用催化剂例如包含钯、铜、镍、铁、铂、银、钌或铑等中的至少1种。无电解镀覆用催化剂的平均粒径例如可以为10nm以下。需要说明的是，平均粒径是能够以动态光散射法等公知的方法作为测定原理，采用体积平均粒径、面积平均粒径、累积中值径(Median径)等求出的值。
需要说明的是，镀覆基底层溶液11A中使用的树脂只要在规定的条件下发生固化即可，并不限于感光性树脂。例如也可以为热固化性树脂。以下对使用感光性树脂的情况进行说明。
对基板1涂布镀覆基底层溶液11A。作为涂布的方法，可以采用旋涂、浸涂、喷涂、辊涂、模涂、刷涂、柔版印刷或丝网印刷之类的印刷法等通常已知的方法。需要说明的是，在涂布镀覆基底层溶液11A之前，可以在大气压下对基板1照射用氧作为反应气体的等离子体。
然后，根据需要进行热处理，使镀覆基底层溶液11A中的溶剂挥发。
(第2工序)
接着，隔着按照镀覆基底层溶液11A固化成所期望的布线图案的形状的方式形成的掩模21对镀覆基底层溶液11A照射紫外线22。由于镀覆基底层溶液11A包含感光性树脂，因而被紫外线22照射的部分因曝光而固化。需要说明的是，镀覆基底层溶液11A中使用的感光性树脂是负型和正型均可，在使用正型的情况下，曝光部对于显影液的溶解性增大。
(第3工序)
接着，通过使一部分固化的镀覆基底层溶液11A与显影液接触，除去未固化部，得到镀覆基底层11B。作为显影液，可以使用水、有机溶剂等。需要说明的是，对于所除去的基底层溶液，通过使用蒸发器等对溶液的浓度进行适当地调整，能够再次用作基底层溶液。
(第4工序)
接着，除去镀覆基底层11B中的表层的至少一部分。表层是指包含镀覆基底层11B的表面的区域。作为表层的除去手段，例如对镀覆基底层11B的表面照射用氧作为反应气体的等离子体23。另外，例如，通过使碱溶液与镀覆基底层11B表面接触，可以除去镀覆基底层11B的表层的一部分。利用本工序除去镀覆基底层11B的表面附近的一部分树脂。然后，根据需要通过水洗等手段对镀覆基底层11B的表面进行清洗。
(第5工序)
接着，在镀覆基底层11B上形成无电解镀覆层12，从而形成布线。作为无电解镀覆层12的形成方法，例如通过将基板1浸渍在镍-磷、铜、锡等的无电解镀覆液中，使镀覆金属在镀覆基底层11B中的无电解镀覆用催化剂的表面析出。
通过以上的方法能够得到适于导电膜或晶体管的布线图案。通过在第4工序中除去镀覆基底层11B中的表面附近的树脂，镀覆的析出性提高。另外，由于该工序还具有除去镀覆基底层溶液11A或镀覆基底层11B的显影后的残渣的效果，因而镀覆的选择性提高，能够更可靠地进行布线图案化。需要说明的是，在第1工序中，可以预先在基板1上设置改变基板1的表面的润湿性的层，之后涂布镀覆基底层溶液11A。例如，使用包含水溶性树脂的材料作为镀覆基底层溶液的情况下，使树脂固化成规定的图案后，使用水作为用于除去未固化部分的显影液。此时，若预先设置亲水膜作为改变润湿性的层，则残渣与基板之间的部分对显影液的渗透性提高，残渣容易从基板剥离，因而可更有效地进行残渣除去。改变润湿性的层的材料根据所使用的基板、镀覆基底层溶液、显影液等适宜地确定即可。
在以上的工序中，能够在不采用剥离处理的情况下利用无电解镀覆形成布线图案，能够降低被废弃的布线材料。另外，由于能够通过湿式工艺来形成布线图案，因而不需要在真空蒸镀、溅射等干式工艺中使用的大型真空设备。另外，由于不需要高温工艺，因而即使在软化点低的树脂等基板上也能够适当地形成布线图案。需要说明的是，本实施方式中形成的布线能够用作晶体管的栅极。以下使用图2和图3对利用本实施方式形成栅极后的晶体管的制造方法进行说明。
<第2实施方式>
图2是用于说明第2实施方式的晶体管的制造方法的一例的截面图(其一)。图3是用于说明第2实施方式的晶体管的制造方法的一例的截面图(其二)。该图对于在图1所示的第1实施方式的布线图案的制造方法中得到栅极后的晶体管的制造工序进行说明。
(第6工序)
接着，在基板1上涂布绝缘体层溶液13A。绝缘体层溶液13A可以使用例如紫外线固化型丙烯酸系树脂、紫外线固化型环氧树脂、紫外线固化型烯-硫醇树脂以及紫外线固化型有机硅树脂等的溶液。需要说明的是，关于绝缘体层中使用的材料，只要是在一定条件下发生固化并具有绝缘性的材料即可，并不限于紫外线固化型树脂材料。例如可以使用热固化型树脂材料来代替紫外线固化型树脂材料，但在本实施方式中，对使用紫外线固化型树脂材料的情况进行说明。
(第7工序)
接着，隔着掩模21对绝缘体层溶液13A照射紫外线22，使绝缘体层溶液13A固化成所期望的形状。此时，可以根据需要进行用于促进紫外线22的照射部的化学反应的热处理。
(第8工序)
接着，除去未固化部分的绝缘体层。例如，通过将基板1浸渍在溶解液中，除去未固化的绝缘体层溶液13A，得到形成为所期望的图案的绝缘体层13B。需要说明的是，使用热固化型树脂等材料作为绝缘体层溶液13A的情况下，通过对规定的位置加热，也能够得到形成为所期望的图案的绝缘体层13B。
(第9工序)～(第12工序)
接着，于绝缘体层13B再次涂布镀覆基底层溶液14A。在(第9工序)～(第12工序)中，与(第1工序)～(第4工序)同样地形成图案化的镀覆基底层14B。
进行第12工序的结果是，除去图案化为所期望的形状的镀覆基底层14B的表层的至少一部分。
(第13工序)
接着，于镀覆基底层14B再次形成布线。与第5工序同样地，使镀覆金属在镀覆基底层11B中的无电解镀覆用催化剂的表面析出，得到金属布线。接着，将金属布线浸渍在置换镀金浴中，使金在金属布线的表面置换析出。接着，将金属布线浸渍在还原镀金浴中，从而将金属布线的表面用所期望厚度的金被覆。本工序中得到的金属布线能够用作源极16和漏极17。
需要说明的是，被覆金属布线的材料并不限于金，可使用具有适于用作半导体的材料的HOMO/LUMO能级的功函数的金属材料。在使用并五苯等HOMO能级高的半导体材料的情况下，优选将金属布线用金被覆。作为使金属层积来得到金属布线的技术，在本申请人提出申请的国际公开WO2013/024734号公报中有记载，因而省略说明。
(第14工序)
接着，在源极16和漏极17之间涂布包含半导体材料的溶液15A。在半导体材料中，可以使用例如TIPS并五苯(6,13-双(三异丙基甲硅烷基乙炔基)并五苯(6,13-Bis(triisopropylsilylethynyl)pentacene))为代表的可溶性并五苯、P3HT(聚(3-己基噻吩-2,5-二基)(poly(3-hexylthiophene-2,5-diyl)))等有机半导体、氧化锌(ZnO)、IGZO、碳纳米管等无机半导体等，此处以使用有机半导体的情况进行说明。将有机半导体溶解在可溶解有机半导体的有机溶剂中，将所得到的含有半导体材料的溶液15A涂布在源极16和漏极17之间。
(第15工序)
接着，使含有半导体材料的溶液15A中的溶剂蒸发，得到有机半导体层15B。在本工序中，可以将基板在常温下设置规定时间，通过自然干燥得到有机半导体层15B，也可以通过加热使有机溶剂蒸发，得到有机半导体层15B。
需要说明的是，在本工序中，通过湿式法形成有机半导体层15B，但有机半导体层15B的形成方法并不限于此，也可以使用例如升华法、转印法。
另外，在对基板1进行加热的情况下，基板1被加热至软化点以下的温度。优选在120℃以下的温度下进行加热。此处，软化点是指，在对基板1进行加热时，基板1发生软化并开始变形的温度，例如可以通过依据JIS K7207(A法)的试验方法来求出。
需要说明的是，在上述任一工序进行加热时，加热温度的上限均优选为基板1的软化点。
利用本实施方式，能够在不采用剥离处理的情况下通过无电解镀覆形成晶体管的电极，能够减少被废弃的布线材料。另外，能够利用在形成为辊状的基板1上连续地制造布线图案的所谓辊到辊(Roll to Roll)方式进行布线图案的制造，能够期待制造工序的简略化。
<第3实施方式>
图4为示出第3实施方式的晶体管的一例的图。在第2实施方式中，制造了在有机半导体层15B的下部形成源极16和漏极17的所谓底接触型的晶体管。在第3实施方式中，通过在有机半导体层15B的上部形成源极16和漏极17来制造所谓顶接触型的晶体管。
即，在形成绝缘体层13B后，于绝缘体层13B再次涂布有机半导体溶液15A，得到有机半导体层15B。接着，于有机半导体层15B再次涂布镀覆基底层溶液14A，使用掩模21使镀覆基底层溶液14A选择性地固化，得到镀覆基底层11B。需要说明的是，此处使用的镀覆基底层溶液14A优选使用利用了水溶性感光性树脂的基底层溶液，以使其不会对有机半导体层15B施加负荷。
接着，利用照射等离子体23等方法除去镀覆基底层11B中的树脂的至少一部分。然后，使镀覆金属在镀覆基底层11B中的无电解镀覆用催化剂的表面析出，得到金属布线。
以上利用本实施方式能够得到在用于导电膜、晶体管的情况下更适宜的布线图案。
<第4实施方式>
接着，对第4实施方式进行说明。在第2和第3实施方式中对于在源极16和漏极17的下部形成了栅极的所谓底栅型的晶体管的制造工序进行了说明。在本实施方式中，使用图5～图7对于使用与第2和第3实施方式同样的材料在源极16和漏极17的上部形成栅极的所谓顶栅型的晶体管的制造工序进行说明。
图5是用于说明第4实施方式的晶体管的制造方法的一例的截面图(其一)，图6是用于说明第4实施方式的晶体管的制造方法的一例的截面图(其二)，图7是用于说明第4实施方式的晶体管的制造方法的一例的截面图(其三)。
(第1工序)～(第5工序)
在(第1工序)至(第5工序)中，与第1实施方式中的(第1工序)至(第5工序)同样地形成布线图案。需要说明的是，在图5的(第5工序)中所示的基板1上形成2个电极。在本实施方式中，镀覆基底层溶液11A选择性地固化，以使得镀覆基底层11B成为用于形成源极16和漏极17的基底膜。然后，进行无电解镀覆，在镀覆基底层11B上形成布线，从而得到源极16和漏极17。需要说明的是，与上述实施方式同样地，源极16和漏极17也可以为将金属布线用金被覆而成的布线。
(第6工序)
接着，在源极16和漏极17之间涂布包含半导体材料的溶液15A。
(第7工序)
接着，使包含半导体材料的溶液15A中的溶剂蒸发，得到有机半导体层15B。
(第8工序)
接着，在基板1上涂布绝缘体层溶液13A。
(第9工序)
接着，对于在第8工序中进行了涂布的绝缘体层溶液13A照射紫外线使其固化，得到绝缘体层13B。此处说明了对进行了涂布的绝缘体层溶液13A的整个面照射紫外线的示例，但也可以与第2实施方式的(第7工序)和(第8工序)同样地使用掩模照射紫外线，得到具有所期望的图案的绝缘体层13B。
(第10工序)～(第14工序)
接着，于绝缘体层13B再次涂布镀覆基底层溶液14A。在(第10工序)至(第14工序)中，与第1实施方式中的(第1工序)至(第5工序)同样地形成布线图案，进行(第14工序)的结果是，能够得到在源极16和漏极17的上部配置了栅极的顶栅型的晶体管。
<实施例1>
利用图1所示的布线图案的制造方法制造镀覆布线。首先，准备PET膜(CosmoshineA-4100(无涂层)：东洋纺织株式会社)作为基板1。另外，分别准备作为镀覆基底层11B中使用的感光性树脂的水溶性的感光性树脂(BIOSURFINE-AWP-MRH(东洋纺织株式会社))、分散有作为无电解镀覆用催化剂的钯(Pd)微粒的纳米Pd分散液(Pd浓度10mM，RenaissanceEnergy Research株式会社)。镀覆基底层溶液11A是将BIOSURFINE-AWP-MRH、纳米Pd分散液和水以1:1:1的重量比混合来制备的。
接着，为了提高基板1与形成在基板1上的镀覆基底层的密合性，在大气压下使用氧气对基板1照射等离子体23。然后，通过旋涂对基板1涂布镀覆基底层溶液11A。旋涂的条件为2000rpm、30秒。
接着，将基板1在60℃加热3分钟。然后，隔着掩模21照射24mJ/cm2的紫外线22。接着将基板1浸渍在纯水中，进行1分钟28kHz的超声波处理，从而进行未曝光部的除去。
图8是示出实施例1中的镀覆基底层11B的光学显微镜像的图。图8的(A)是示出L/S＝30μm/30μm的图案的图，图8的(B)是示出L/S＝8μm/8μm的图案的图。色深的部分为镀覆基底膜，色浅的部分为布线部分。确认到甚至描绘出了L/S＝8μm/8μm的微细图案。
接着，通过在大气压下使用氧气对基板1进行等离子体处理，除去镀覆基底层11B的表层的树脂。然后，将基板1浸渍在纯水中，进行1分钟28kHz的超声波处理。接着，将基板1在无电解NiP镀覆浴(Melplate NI-867：Meltex公司制造)中浸渍40秒。
图9是示出实施例1中的镀覆布线部的光学显微镜像的图。图9的(A)是示出L/S＝30μm/30μm的图案的图，图9的(B)是示出L/S＝8μm/8μm的图案的图。图9的(A)和图9的(B)中均是色浅的部分为布线部分。可知布线部分与布线以外的部分的对比度变得明确，适当地进行了图案化。
<比较例1>
在本比较例中，与实施例1同样地进行了镀覆基底层11B的图案化，然后，与实施例1不同，未对基板1进行基于氧气的等离子体处理。对于其他工序与实施例1相同。
图10是示出比较例1中的镀覆布线部的光学显微镜像的图。图10的(A)是示出L/S＝30μm/30μm的图案的图，图10的(B)是示出L/S＝8μm/8μm的图案的图，图10的(A)和图10的(B)中均是色浅的部分为布线部分。在图10的(B)中特别显著，布线以外的部分有一部分变白。这表示在布线以外的部分也有镀覆金属析出。作为结果，可知未适当地进行图案化。
<实施例2>
在本实施例中，与实施例1同样地进行了镀覆基底层11B的图案化，然后，与实施例1不同，未进行基于氧气的等离子体处理，而将基板1浸渍在0.2mol/L、70℃的氢氧化钾水溶液中。对于其他工序，与实施例1相同。
图11是示出实施例2中的镀覆布线部的光学显微镜像的图。图11中示出L/S＝30μm/30μm的图案，色浅的部分为布线部分。可知布线部分与布线以外的部分的对比度变得明确，浸渍在氢氧化钾溶液中的情况下，也与进行等离子体处理的情况同样地适当地进行图案化。
<实施例3>
(栅极的形成)
与实施例1同样地在基板1上形成NiP镀覆布线，作为栅极。然后，为了除去无电解NiP镀覆浴所带来的水分，将基板1在105℃加热20分钟。
图12是示出实施例3中的基板1和栅极的光学显微镜像的图。图12的(A)是实施例3中形成了栅极的基板1的照片。图12的(B)是栅极的光学显微镜像。在基板1上适当地形成了栅极。
(绝缘体层13B的形成)
接着，在大气压下使用氧气对基板1进行等离子体照射。接着，利用浸涂将绝缘膜树脂溶液涂布在基板1上。绝缘膜树脂溶液使用将绝缘性的树脂材料(SU8 3005：日本化药公司制造)用环己酮稀释成2倍而得到的溶液。另外，使浸涂的提拉速度为1mm/s。
接着，将基板1在105℃加热10分钟。然后，隔着光掩模21照射200mJ/cm2的紫外线22，在105℃加热60分钟。接下来，使基板1浸渗在PGMEA(丙二醇1-单甲醚2-乙酸酯)中，将绝缘体层13B中的紫外线22未曝光部分的区域溶解。然后，将基板1在105℃加热30分钟，形成厚度为1μm的绝缘体层13B。
图13是示出实施例3中的形成绝缘体层13B后的基板1和该基板1的光学显微镜像的图。图13的(A)是形成绝缘体层13B后的基板1的照片，被虚线围起的区域为形成有绝缘体层13B的区域。需要说明的是，虚线是为了使形成有绝缘体层13B的区域与其他区域的边界明确而在事后叠加在照片上的部分，并不是拍到照片中的图像的一部分。图13的(B)是形成绝缘体层13B后的基板1的光学显微镜像。
(源极16和漏极17的形成)
在绝缘体层13B上与实施例1同样地形成NiP的镀覆布线后，将基板1在置换镀Au浴(SuperMex(スーパーメックス)#255：NE Chemcat制)中浸渗1分钟。接下来，将基板1在还原镀Au浴(SuperMex#880：NE Chemcat制)中浸渗1分钟。然后，为了除去水分，将基板1在105℃干燥60分钟。
图14是示出实施例3中的形成源极16和漏极17后的基板1和电极的光学显微镜像的图。图14的(A)是形成源极16和漏极17后的基板1的照片，图14的(B)是电极的光学显微镜像。按照通道长为20μm、通道宽为500nm的方式形成了源极16和漏极17。
(有机半导体层15B的形成)
接着，在通道区域中，滴加2重量％TIPS并五苯甲苯溶液并进行成膜，制作有机晶体管。
图15是示出实施例3中的形成有机半导体层15B后的基板1和该基板1的光学显微镜像的图。图15的(A)是形成有机半导体层15B后的基板1的照片，图15的(B)是有机半导体层15B的光学显微镜像。可知在通道区域上形成了有机半导体层15B。
图16是示出实施例3中的晶体管的特性评价的图。晶体管特性评价使用半导体参数分析仪(4200-SCS：TFF Keithley Instruments公司制造)进行。图16的(A)是示出实施例3中制作的底栅-底接触型有机晶体管的传递特性的图，图16的(B)是示出该晶体管的输出特性的图。另外，本晶体管显示出了迁移率为1.2×10-3cm2/Vs、On/Off比为1.9×105的比较良好的特性。
(评价)
以上在不采用剥离处理的情况下通过无电解镀覆成功地制作了布线图案和晶体管。根据本实施方式，能够在大气压下实施全部的工序。另外，由于在任一工艺中均能够在100℃左右的温度下进行，因而在基板1中使用PET的情况下，也能够在基板1的软化点以下的温度下制作出适宜的晶体管。另外，由于使用光进行图案化，因而能够得到高精度的布线图案。
符号说明
1：基板、11A：镀覆基底层溶液、11B：镀覆基底层、12：无电解镀覆层、13A：绝缘体层溶液、13B：绝缘体层、14A：镀覆基底层溶液、14B：镀覆基底层、15A：有机半导体溶液、15B：有机半导体层、16：源极、17：漏极、21：掩模、22：紫外线、23：等离子体

Claims (11)

1.一种布线图案的制造方法，其特征在于，其具有下述工序：
在基板上设置改变基板的表面的润湿性的层的工序，
基底层形成工序，形成包含无电解镀覆用催化剂和树脂的基底层；
表层除去工序，除去所述基底层的表层的至少一部分；以及
镀覆层形成工序，进行无电解镀覆，在进行了所述表层除去工序的基底层上形成镀覆层，
所述树脂的前体为水溶性的。
2.如权利要求1所述的布线图案的制造方法，其特征在于，在所述基底层形成工序中，涂布包含所述无电解镀覆用催化剂和所述树脂的前体的溶液，使所述树脂的前体固化成规定的图案，由此形成所述基底层。
3.如权利要求2所述的布线图案的制造方法，其特征在于，所述树脂的前体通过照射包含规定的波长的光在内的光而发生固化。
4.如权利要求3所述的布线图案的制造方法，其特征在于，隔着具有与所述规定的图案相对应的开口部的掩模照射包含所述规定的波长的光在内的光，由此使所述树脂的前体固化。
5.如权利要求1～4中任一项所述的布线图案的制造方法，其特征在于，在所述表层除去工序中，对所述基底层的表面照射等离子体。
6.如权利要求1～4中任一项所述的布线图案的制造方法，其特征在于，在所述表层除去工序中，使碱溶液与所述基底层接触。
7.如权利要求1～4中任一项所述的布线图案的制造方法，其特征在于，所述无电解镀覆用催化剂包含钯、铜、镍、铁、铂、银中的至少1种。
8.如权利要求1～4中任一项所述的布线图案的制造方法，其特征在于，在所述基底层形成工序中，在包含树脂材料的基板上形成所述基底层。
9.如权利要求8所述的布线图案的制造方法，其特征在于，所述基底层形成工序、所述表层除去工序和所述镀覆层形成工序在低于所述基板的软化点的温度下进行。
10.一种导电膜的制造方法，其特征在于，使用权利要求1～9中任一项所述的布线图案的制造方法来进行制造。
11.一种晶体管的制造方法，其制造包含栅极、源极、漏极、半导体层和栅极绝缘层的晶体管，其特征在于，所述栅极、所述源极和所述漏极中的至少一者利用权利要求1～9中任一项所述的布线图案的制造方法来进行制造。
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