CN107681039A - The encapsulating structure and method for packing of a kind of LED chip - Google Patents
The encapsulating structure and method for packing of a kind of LED chip Download PDFInfo
- Publication number
- CN107681039A CN107681039A CN201710882751.4A CN201710882751A CN107681039A CN 107681039 A CN107681039 A CN 107681039A CN 201710882751 A CN201710882751 A CN 201710882751A CN 107681039 A CN107681039 A CN 107681039A
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- Prior art keywords
- material layer
- magnetic material
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- substrate
- electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention discloses a kind of encapsulating structure of LED chip and method for packing, the encapsulating structure includes：Substrate, the substrate have the first magnetic material layer and wired circuit；LED chip, the LED chip include the second magnetic material layer；Wherein, the LED chip is fixed on the substrate surface by the magnetic force of first magnetic material layer and second magnetic material layer；The LED chip electrically connects with the wired circuit.Technical solution of the present invention integrates the first magnetic material layer on substrate, the second magnetic material layer is integrated in LED chip, when being packaged to the LED chip, LED chip is fixed on substrate by the magnetic-adsorption between the first magnetic material layer and the second magnetic material layer, it is adhesively fixed without glue-line, ensure that LED chip has preferable planarization and aligning accuracy in encapsulation process.
Description
Technical field
The present invention relates to technical field of semiconductor luminescence, in particular, is related to a kind of encapsulating structure of LED chip
And method for packing.
Background technology
LED (light emitting diode) is due to operating voltage is low, energy consumption is low, pollution-free, the corresponding time is fast, spectral hand is wide
And many advantages, such as low manufacture cost, it is widely used in AC power indicator lamp, alternating-current switch indicator lamp, AC power
Socket indicator lamp, fuse base indicator lamp, LED advertising signboards lamp, LED are monochromatic or colorful display screen, LED street lamp, LED automobile are believed
The numerous areas such as signal lamp and LED electric car illumination lamps, huge facility is brought for daily life and work, into
For the indispensable important tool of current people life.
When prior art is packaged to LED chip, typically it is only through glue-line and LED chip is fixed on substrate, with
It is easy to LED chip to be electrically connected with the wired circuit on substrate, glue-line is needed by the process of setting by liquid to solid-state, liquid
Mobility causes LED chip encapsulation planarization and aligning accuracy bad.
The content of the invention
In order to solve the above problems, the embodiments of the invention provide a kind of encapsulating structure of LED chip and method for packing,
LED chip is fixed on substrate by the magnetic-adsorption between the first magnetic material layer and the second magnetic material layer, without
Glue-line is adhesively fixed, and ensure that LED chip has preferable planarization and aligning accuracy in encapsulation process.
To achieve these goals, the present invention provides following technical scheme：
A kind of encapsulating structure of LED chip, the encapsulating structure include：
Substrate, the substrate have the first magnetic material layer and wired circuit；
LED chip, the LED chip include the second magnetic material layer；
Wherein, the LED chip is fixed by the magnetic force of first magnetic material layer and second magnetic material layer
In the substrate surface；The LED chip electrically connects with the wired circuit.
Preferably, in above-mentioned encapsulating structure, first magnetic material layer and second magnetic material layer are to lead
Body, and first magnetic material layer electrically connects with the wiring route, second magnetic material layer passes through first magnetic
Property material layer electrically connects with the wired circuit；
The LED chip includes first electrode and second electrode；In the first electrode and the second electrode at least
One is electrically connected by first magnetic material layer and second magnetic material layer with the wired circuit.
Preferably, include in above-mentioned encapsulating structure, the LED chip：
Transparent substrate；
Positioned at the extension functional layer of the substrate surface；The first electrode and the second electrode are located at the extension
Function layer surface；The first electrode electrically connects with the n type semiconductor layer of the extension functional layer, the second electrode with it is described
The p-type semiconductive layer electrical connection of extension functional layer；
Wherein, second magnetic material layer includes the Part I and Part II of insulation；The Part I position
In the surface of the first electrode, the Part II is located at the surface of the second electrode；The first magnetic material layer bag
The Part III and Part IV of insulation are included, the Part III and the Part IV are electric with the wired circuit respectively
Connection；The first electrode is electrically connected by the Part I with the Part III, and the second electrode passes through described
Two parts electrically connect with the Part IV.
Preferably, in above-mentioned encapsulating structure, the substrate is sapphire or undoped silicon substrate or undoped arsenic
Change gallium substrate or undoped gallium nitride substrate.
Preferably, include in above-mentioned encapsulating structure, the LED chip：
Conductive substrate；
Positioned at the extension functional layer of the substrate surface；
The first electrode is located at the side surface that the substrate deviates from the extension functional layer, passes through the substrate and institute
State the n type semiconductor layer electrical connection of extension functional layer；
The second electrode is located at the extension function layer surface, is electrically connected with the p type semiconductor layer of the extension functional layer
Connect；
Wherein, second magnetic material layer is located at the surface of the first electrode, and the first electrode passes through described
Two magnetic material layers electrically connect with first magnetic material layer, and then are electrically connected with the wired circuit；The second electrode
Electrically connected by bonding wire with the external circuit.
Preferably, in above-mentioned encapsulating structure, the first electrode and the second electrode be Au electrodes or Ag electrodes,
Or Cu electrodes.
Preferably, also have between above-mentioned encapsulating structure, first magnetic material layer and second magnetic material layer
There are tin layers, the tin layers are used to first magnetic material layer and second magnetic material layer be adhesively fixed.
Preferably, in above-mentioned encapsulating structure, first magnetic material layer and second magnetic material layer are Fe and Ni
Alloy-layer.
Present invention also offers a kind of method for packing of LED chip, for preparing the encapsulating structure described in any of the above-described,
The method for packing includes：
A substrate is provided, the substrate has the first magnetic material layer and wired circuit；
LED chip is bound on the substrate, and the LED chip includes the second magnetic material layer；
Wherein, the LED chip is fixed by the magnetic force of first magnetic material layer and second magnetic material layer
In the substrate surface；The LED chip electrically connects with the wired circuit.
Preferably, also have in above-mentioned method for packing, first magnetic material layer or the second magnetic material layer surface
There are tin layers；
The LED chip of binding on the substrate includes：
First magnetic material layer and the second magnetic material is adhesively fixed by the heat pressing process tin layers
The bed of material.
In the LED core chip package and method for packing that are provided by foregoing description, technical solution of the present invention,
The first magnetic material layer is integrated on substrate, the second magnetic material layer is integrated in LED chip, is sealed to the LED chip
During dress, LED chip is fixed on substrate by the magnetic-adsorption between the first magnetic material layer and the second magnetic material layer,
It is adhesively fixed without glue-line, ensure that LED chip has preferable planarization and aligning accuracy in encapsulation process.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is a kind of structural representation of the encapsulating structure of LED chip provided in an embodiment of the present invention；
Fig. 2 is the structural representation of the encapsulating structure of another LED chip provided in an embodiment of the present invention；
Fig. 3-Fig. 6 is a kind of schematic flow sheet of method for packing provided in an embodiment of the present invention；
Fig. 7-Figure 10 is the schematic flow sheet of another method for packing provided in an embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
In order to facilitate the understanding of the purposes, features and advantages of the present invention, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is further detailed explanation.
With reference to figure 1, Fig. 1 is a kind of structural representation of the encapsulating structure of LED chip provided in an embodiment of the present invention, described
Encapsulating structure includes：Substrate 1, the substrate 11 have the first magnetic material layer 111 and wired circuit；LED chip 12, it is described
LED chip 12 includes the second magnetic material layer 121.Wherein, the LED chip 12 by first magnetic material layer 111 with
The magnetic force of second magnetic material layer 121 is fixed on the surface of substrate 11；The LED chip 12 and wired circuit electricity
Connection.
First magnetic material layer 111 and second magnetic material layer 121 are conductor, and first magnetic
Material layer 111 electrically connects with the wiring route, and second magnetic material layer 121 passes through first magnetic material layer 111
Electrically connected with the wired circuit.The LED chip 12 includes first electrode 122 and second electrode 123；The first electrode
At least one of 121 and the second electrode 123 pass through first magnetic material layer 111 and second magnetic material layer
121 electrically connect with the wired circuit.
The wired circuit not shown in Fig. 1.The substrate 11 includes circuit board 112, and the circuit board includes the cloth
Line circuit.The circuit board 112 can be printed substrate, such as pcb board.The wired circuit comprises at least two branch roads, uses
In being electrically connected respectively with first electrode 122 and second electrode 123.The LED chip 12 passes through the wired circuit and outside
Circuit connects.
In the embodiment shown in fig. 1, LED chip 12 be horizontal structure LED chip, first electrode 122 and second
Electrode 123 is located at the same side of LED chip 12.The upside-down mounting of LED chip 12 is fixed on the surface of substrate 11.
As shown in figure 1, the LED chip 12 includes：Transparent substrate 127；Extension work(positioned at the surface of substrate 127
Ergosphere AA.The extension functional layer AA is located at the substrate 127 towards the side of the substrate 1.
Extension functional layer AA includes the n type semiconductor layer 125 and p type semiconductor layer 124 that are oppositely arranged, positioned at the two it
Between quantum well layer, the quantum well layer not shown in Fig. 1.In order to improve extension functional layer AA performance, the epitaxial layer is also
Including also having cushion 126 between n type semiconductor layer 125 and substrate 127.
The first electrode 122 and the second electrode 123 are located at the extension functional layer AA surfaces, the two equal extension
Functional layer AA is towards a side surface of the substrate 11.The first electrode 122 and the N-type semiconductor of the extension functional layer AA
Layer 125 electrically connects, and the second electrode 123 electrically connects with the p-type semiconductive layer 124 of the extension functional layer AA.Specifically, extension
The side of functional layer AA towards substrate 11 has groove, for n type semiconductor layer 125 described in exposed portion, the second electrode
122 in the groove, contact with the n type semiconductor layer 125, to realize that the two is electrically connected.3rd electrode 123 is straight
Connect positioned at the surface of p type semiconductor layer 124, contacted with p type semiconductor layer 124, to realize that the two is electrically connected.
Wherein, second magnetic material layer 121 includes first 121a points to insulate and Part II 121b；It is described
Part I 121a is located at the surface of the first electrode 122, and the Part II 121b is located at the table of the second electrode 123
Face.First magnetic material layer 111 includes the Part III 111a and Part IV 111b of insulation, the Part III
111a and the Part IV 111b electrically connect with the wired circuit respectively；The first electrode 122 passes through described first
Part 121a electrically connects with the Part III 111a, and the second electrode 123 passes through the Part II 121b and described the
Four part 111b are electrically connected.
In the embodiment shown in fig. 1, the substrate 127 can be sapphire or undoped silicon substrate or non-impurity-doped
Gallium arsenide substrate or undoped gallium nitride substrate.The emergent ray of LED chip 12 deviates from extension functional layer by substrate 217
AA side surface outgoing.
In embodiments of the present invention, the first electrode 122 and the second electrode 123 be Au electrodes or Ag electrodes,
Or Cu electrodes.
In order that obtaining the surface that LED chip 12 is more stably fixed to substrate 11, first magnetic material layer is set
Also there are tin layers 13, the tin layers 13 are used to first magnetic be adhesively fixed between 111 and second magnetic material layer 121
Material layer 111 and second magnetic material layer 121.
For the LED chip 12 of horizontal structure shown in Fig. 1, tin layers 13 include the Part I tin layers 13a and the of insulation
Two part tin layers 13b.Part I tin layers 13a is between Part I 121a and Part III 111a, Part II tin layers
13b is between Part II 121b and Part IV 111b.Heat pressing process can be passed through so that the tin layers 13 are adhesively fixed
First magnetic material layer 111 and second magnetic material layer 121.
In encapsulating structure described in the embodiment of the present invention, first magnetic material layer 111 and second magnetic material
Layer 121 is Fe and Ni alloy-layer.The magnetic material of other conductive energy can also be used in other embodiments.
In the embodiment shown in fig. 1, the first electrode 122 passes through first magnetic with the second electrode 123
Property material layer 111 and second magnetic material layer 121 electrically connect with the wired circuit.
In embodiments of the present invention, in the encapsulating structure, the LED chip 12 can also be the LED core of vertical stratification
Piece, now, the encapsulating structure are as shown in Figure 2.
With reference to figure 2, Fig. 2 is the structural representation of the encapsulating structure of another LED chip provided in an embodiment of the present invention,
In encapsulating structure shown in Fig. 2, equally include LED chip 12 and substrate 11.
The LED chip 12 includes：Conductive substrate 127；Extension functional layer AA positioned at the surface of substrate 127.Outside
Prolong functional layer AA and be located at the side that the substrate 127 deviates from the substrate 11.Extension functional layer AA includes：The N-type being oppositely arranged
Semiconductor layer 125 and p type semiconductor layer 124, quantum well layer positioned there between.Quantum well layer not shown in Fig. 2.Together
Sample, cushion 126 can be set between substrate 127 in n type semiconductor layer 125.
The first electrode 12 is located at the side surface that the substrate 127 deviates from the extension functional layer AA, by described
Substrate 127 electrically connects with the n type semiconductor layer 125 of the extension functional layer AA.If cushion 126 is set, it is necessary to using tool
The cushion 126 having conductivity, to ensure the n type semiconductor layer 125 of the first electrode 12 and the extension functional layer AA
Electrical connection.The substrate 127 can be the silicon substrate and gallium arsenide substrate of doping, to cause substrate 127 has preferably to lead
Electrically.
The second electrode 123 is located at the extension functional layer AA surfaces, the P-type semiconductor with the extension functional layer AA
Layer 124 electrically connects.The second electrode 123 is provided directly with the surface of p type semiconductor layer 124, direct with p type semiconductor layer 124
Contact, to realize the electrical connection of the two.
Wherein, second magnetic material layer 121 is located at the surface of the first electrode 122, and the first electrode 122 is logical
Cross second magnetic material layer 121 to electrically connect with first magnetic material layer 111, and then be electrically connected with the wired circuit
Connect.In the exemplary embodiment illustrated in fig. 2, the first electrode 122 passes through first magnetic material layer 111 and second magnetic
Property material layer 121 electrically connects with the wired circuit.The second electrode 123 is electrically connected by bonding wire 14 and the external circuit
Connect.
In the exemplary embodiment illustrated in fig. 2, the material of the first electrode 122 and the second electrode 123 can with it is upper
State that embodiment is identical, material and above-mentioned embodiment party of first magnetic material layer 111 with second magnetic material layer 121
Formula is identical, will not be repeated here.Equally, in order to ensure more preferable fixed effect, first magnetic material layer 111 and institute are set
Stating between the second magnetic material layer 121 also has tin layers 13, for first magnetic material layer 111 and described to be adhesively fixed
Second magnetic material layer 121.
By foregoing description, in encapsulating structure described in the embodiment of the present invention, the first magnetic material is integrated on the substrate 11
The bed of material 111, the second magnetic material layer 121 is integrated in LED chip 12, when being packaged to the LED chip 12, by the
Magnetic-adsorption between one magnetic material layer 111 and the second magnetic material layer 121 fixes LED chip 12 on the substrate 11,
It is adhesively fixed without glue-line, ensure that LED chip has preferable planarization and aligning accuracy in encapsulation process.
Based on the encapsulating structure described in above-described embodiment, another embodiment of the present invention additionally provides a kind of envelope of LED chip
Dress method, for preparing the encapsulating structure described in above-described embodiment, as shown in figures 3 to 6, Fig. 3-Fig. 6 is this to the method for packing
A kind of schematic flow sheet for method for packing that inventive embodiments provide, the method for packing include：
Step S11：As shown in Figure 3, there is provided a substrate.
The substrate 11 has the first magnetic material layer 111 and wired circuit.The wired circuit not shown in Fig. 3.
The substrate 11 is used for the LED chip for binding horizontal structure, and now, the first magnetic material layer 111 divides for two parts, the two parts
Respectively Part III 111a and Part IV 111b.
Step S12：As Figure 4-Figure 6, LED chip 12 is bound on the substrate, and the LED chip 12 includes second
Magnetic material layer 121.
Wherein, the LED chip 12 passes through first magnetic material layer 111 and second magnetic material layer 121
Magnetic force is fixed on the surface of substrate 11；The LED chip 12 electrically connects with the wired circuit.
In method for packing described in the embodiment of the present invention, first magnetic material layer 111 or second magnetic material layer
121 surfaces also have tin layers 13；The LED chip 12 of being bound on the substrate 11 includes：It is described by heat pressing process
First magnetic material layer 111 and second magnetic material layer 121 is adhesively fixed in tin layers 13.
Specifically, in step s 12, first, as shown in Figure 4, there is provided a LED chip 12, in the second magnetic material layer 121
Part I 121a surfaces covered with Part I tin layers 13a, covered in the Part II 121b of the second magnetic material layer 121
There is Part II tin layers 13b.The structure of LED chip 12 is identical with LED chip 12 in encapsulating structure as shown in Figure 1, herein no longer
Repeat.
Then, as shown in figure 5, magnetizing second magnetic material layer 121 by magnet 51.Magnet magnetization can also be passed through
First magnetic material layer 111.First magnetic material layer 111 in second magnetic material layer 121 with least magnetizing
One.
Finally, as shown in fig. 6, LED chip 12 is weldingly fixed on into the table of substrate 11 by tin layers 13 by hot pressing welding plate 61
Face.
In Fig. 3-Fig. 6 illustrated embodiments, encapsulating structure as shown in Figure 1 can be made.
The method for packing of encapsulating structure shown in Fig. 2 can be as shown in Fig. 7-Figure 10, and Fig. 7-Figure 10 carries for the embodiment of the present invention
The schematic flow sheet of another method for packing supplied, the method for packing include：
Step S21：As shown in Figure 7, there is provided a substrate.
The substrate 11 has the first magnetic material layer 111 and wired circuit.The wired circuit not shown in Fig. 7.
The substrate 11 is used for the LED chip for binding vertical stratification, and now the surface of circuit board 112 of substrate 11, which has, is used to weld with welding
The binding pad 71 of line.Step S12：As Figure 8-Figure 10, LED chip 12 is bound on the substrate, and the LED chip 12 is wrapped
Include the second magnetic material layer 121.
The method for packing is used to form encapsulating structure as shown in Figure 2, specifically, in step s 12, first, such as Fig. 8 institutes
Show, there is provided a LED chip 12, on the surface of the second magnetic material layer 121 covered with tin layers 13, the structure of LED chip 12 and such as Fig. 2
LED chip 12 is identical in shown encapsulating structure, will not be repeated here.
Then, as shown in figure 9, magnetizing second magnetic material layer 121 by magnet 91.Magnet magnetization can also be passed through
First magnetic material layer 111.First magnetic material layer 111 in second magnetic material layer 121 with least magnetizing
One.
Finally, as shown in Figure 10, LED chip 12 is weldingly fixed on by substrate 11 by tin layers 13 by hot pressing welding plate 101
Surface, second electrode 123 is electrically connected with binding pad 71 by bonding wire after the completion of hot pressing, forms encapsulating structure as shown in Figure 2.
Method for packing described in the embodiment of the present invention can be used for making above-mentioned encapsulating structure, by integrating the on the substrate 11
One magnetic material layer 111, the second magnetic material layer 121 is integrated in LED chip 12, is packaged to the LED chip 12
When, LED chip 12 is fixed on by the magnetic-adsorption between the first magnetic material layer 111 and the second magnetic material layer 121
On substrate 11, it is adhesively fixed without glue-line, ensure that LED chip has preferable planarization and contraposition essence in encapsulation process
Degree.
Each embodiment is described by the way of progressive in this specification, what each embodiment stressed be and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.For encapsulation disclosed in embodiment
For method, due to its with embodiment disclosed in encapsulating structure it is corresponding, so description is fairly simple, related part is referring to envelope
Assembling structure relevant portion illustrates.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (10)
1. a kind of encapsulating structure of LED chip, it is characterised in that the encapsulating structure includes：
Substrate, the substrate have the first magnetic material layer and wired circuit；
LED chip, the LED chip include the second magnetic material layer；
Wherein, the LED chip is fixed on institute by the magnetic force of first magnetic material layer and second magnetic material layer
State substrate surface；The LED chip electrically connects with the wired circuit.
2. encapsulating structure according to claim 1, it is characterised in that first magnetic material layer and second magnetic
Property material layer is conductor, and first magnetic material layer electrically connects with the wiring route, second magnetic material layer
Electrically connected by first magnetic material layer with the wired circuit；
The LED chip includes first electrode and second electrode；At least one of the first electrode and the second electrode
Electrically connected by first magnetic material layer and second magnetic material layer with the wired circuit.
3. encapsulating structure according to claim 2, it is characterised in that the LED chip includes：
Transparent substrate；
Positioned at the extension functional layer of the substrate surface；The first electrode and the second electrode are located at the extension function
Layer surface；The first electrode electrically connects with the n type semiconductor layer of the extension functional layer, the second electrode and the extension
The p-type semiconductive layer electrical connection of functional layer；
Wherein, second magnetic material layer includes the Part I and Part II of insulation；The Part I is located at institute
The surface of first electrode is stated, the Part II is located at the surface of the second electrode；First magnetic material layer includes exhausted
The Part III and Part IV of edge, the Part III and the Part IV are electrically connected with the wired circuit respectively
Connect；The first electrode is electrically connected by the Part I with the Part III, and the second electrode passes through described second
Part electrically connects with the Part IV.
4. encapsulating structure according to claim 3, it is characterised in that the substrate is that sapphire or undoped silicon serve as a contrast
Bottom or undoped gallium arsenide substrate or undoped gallium nitride substrate.
5. encapsulating structure according to claim 2, it is characterised in that the LED chip includes：
Conductive substrate；
Positioned at the extension functional layer of the substrate surface；
The first electrode is located at the side surface that the substrate deviates from the extension functional layer, by the substrate with it is described outer
Prolong the n type semiconductor layer electrical connection of functional layer；
The second electrode is located at the extension function layer surface, is electrically connected with the p type semiconductor layer of the extension functional layer；
Wherein, second magnetic material layer is located at the surface of the first electrode, and the first electrode passes through second magnetic
Property material layer electrically connects with first magnetic material layer, and then is electrically connected with the wired circuit；The second electrode passes through
Bonding wire electrically connects with the external circuit.
6. encapsulating structure according to claim 2, it is characterised in that the first electrode and the second electrode are Au
Electrode or Ag electrodes or Cu electrodes.
7. according to the encapsulating structure described in claim any one of 1-6, it is characterised in that first magnetic material layer with it is described
Also there are tin layers, the tin layers are used to being adhesively fixed first magnetic material layer and described the between second magnetic material layer
Two magnetic material layers.
8. according to the encapsulating structure described in claim any one of 1-6, it is characterised in that first magnetic material layer with it is described
Second magnetic material layer is Fe and Ni alloy-layer.
9. a kind of method for packing of LED chip, for preparing the encapsulating structure as described in claim any one of 1-8, feature exists
In the method for packing includes：
A substrate is provided, the substrate has the first magnetic material layer and wired circuit；
LED chip is bound on the substrate, and the LED chip includes the second magnetic material layer；
Wherein, the LED chip is fixed on institute by the magnetic force of first magnetic material layer and second magnetic material layer
State substrate surface；The LED chip electrically connects with the wired circuit.
10. method for packing according to claim 9, it is characterised in that first magnetic material layer or second magnetic
Property material surface also has tin layers；
The LED chip of binding on the substrate includes：
First magnetic material layer and second magnetic material layer is adhesively fixed by the heat pressing process tin layers.
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| CN201710882751.4A CN107681039A (en) | 2017-09-26 | 2017-09-26 | The encapsulating structure and method for packing of a kind of LED chip |
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| CN201710882751.4A CN107681039A (en) | 2017-09-26 | 2017-09-26 | The encapsulating structure and method for packing of a kind of LED chip |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615741A (en) * | 2018-04-19 | 2018-10-02 | 友达光电股份有限公司 | Light emitting device and method for manufacturing the same |
| CN109065692A (en) * | 2018-08-01 | 2018-12-21 | 厦门多彩光电子科技有限公司 | A kind of packaging method of LED |
| WO2020107809A1 (en) * | 2018-11-29 | 2020-06-04 | 昆山工研院新型平板显示技术中心有限公司 | Led chip, and assembly apparatus and assembly method for display panel |
| CN112838082A (en) * | 2020-12-31 | 2021-05-25 | 深圳Tcl新技术有限公司 | LED lamp panel preparation method, magnetic LED chip and preparation method thereof, and LED display screen |
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| CN106941090A (en) * | 2017-03-07 | 2017-07-11 | 友达光电股份有限公司 | Transposed seal and transfer method using the same |
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| CN106847796A (en) * | 2015-11-19 | 2017-06-13 | 三星电子株式会社 | LED chip, light source module, LED display panel and the LED display device including it |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615741A (en) * | 2018-04-19 | 2018-10-02 | 友达光电股份有限公司 | Light emitting device and method for manufacturing the same |
| CN108615741B (en) * | 2018-04-19 | 2021-01-01 | 友达光电股份有限公司 | Light emitting device and method for manufacturing the same |
| CN109065692A (en) * | 2018-08-01 | 2018-12-21 | 厦门多彩光电子科技有限公司 | A kind of packaging method of LED |
| WO2020107809A1 (en) * | 2018-11-29 | 2020-06-04 | 昆山工研院新型平板显示技术中心有限公司 | Led chip, and assembly apparatus and assembly method for display panel |
| CN111244010A (en) * | 2018-11-29 | 2020-06-05 | 昆山工研院新型平板显示技术中心有限公司 | LED chip, assembling device and assembling method of display panel |
| CN112838082A (en) * | 2020-12-31 | 2021-05-25 | 深圳Tcl新技术有限公司 | LED lamp panel preparation method, magnetic LED chip and preparation method thereof, and LED display screen |
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Application publication date: 20180209 |