CN208970505U - A kind of package assembling - Google Patents
A kind of package assembling Download PDFInfo
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- CN208970505U CN208970505U CN201821669481.5U CN201821669481U CN208970505U CN 208970505 U CN208970505 U CN 208970505U CN 201821669481 U CN201821669481 U CN 201821669481U CN 208970505 U CN208970505 U CN 208970505U
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- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 33
- 238000003466 welding Methods 0.000 claims description 31
- 230000005611 electricity Effects 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 11
- 238000004804 winding Methods 0.000 claims description 11
- 238000005538 encapsulation Methods 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000008707 rearrangement Effects 0.000 claims description 3
- 230000001360 synchronised effect Effects 0.000 description 9
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
The utility model provides a kind of package assembling, in the package assembling, at least one the second high voltage pack terminal coupled with the terminal of the second high-pressure side driving circuit in package assembling is provided between any two the first high voltage pack terminal coupled with the terminal of the first high-pressure side driving circuit in package assembling, and make the first spacing between the two high voltage pack terminals coupled from the terminal of the different high-pressure side driving circuits not less than preset value, to ensure the electrical isolation between two high voltage pack terminals, be conducive to improve the flexible topology of each package terminal of package assembling and improve the reliability of package assembling.
Description
Technical field
The utility model relates to technical field of semiconductor encapsulation, more particularly, to a kind of package assembling.
Background technique
Permanent magnet synchronous motor (such as three-phase permanent magnet synchronous motor) is since its own is with light-weight, small in size, structure is simple
With some advantages such as power density height, important work is played in daily life, industrial and agricultural production and national economic development
With.Further, since the continuous improvement of permanent magnetic material performance and perfect and power electronic devices further development, permanent magnetism are same
Walk motor using more and more extensive.
Permanent magnet synchronous motor generallys use half-bridge drive integrated circuit and is driven, for example, three-phase permanent magnet synchronous motor half
Bridge drive integrated circult includes three groups of half-bridge drive circuits, and each group of half-bridge drive circuit includes a high side transistor and low
Press its of side transistor, the connected node of the high side transistor and low side transistor and the three-phase permanent magnet synchronous motor
In a phase winding be connected, with to the phase winding output drive signal.And the high side transistor itself is needed in a superelevation
Voltage (usually upper the hectovolt even voltage of several hectovolts) drive, therefore, in the drive control chip of permanent magnet synchronous motor
It usually also needs to include that multiple groups high-voltage driving circuit corresponding with multiphase permanent magnet synchronous motor drives to export the driving signal of superelevation
The high side transistor of dynamic corresponding group.Voltage difference between the output terminal of the high-voltage driving circuit as described in different groups usually has
It is more than upper hectovolt, then for the package assembling of the drive control chip comprising motor, from different groups of high-voltage driving circuits
Certain electrical isolation characteristic is necessary to ensure that between the package terminal of coupling, then when designing such package assembling, it is described
Arrangement and setting between the package terminal of high-voltage driving circuit coupling is particularly important to the reliability of the package assembling.
Utility model content
In view of this, the present invention provides a kind of new package assemblings, to improve the package terminal layout of package assembling
Flexibility and improve package assembling reliability.
A kind of package assembling, which is characterized in that driven including multiple high-pressure side driving circuits and with the multiple high-pressure side
Multiple high voltage pack terminals of circuit coupling,
In the first high-pressure side driving circuit and the multiple high voltage pack terminal in the multiple high-pressure side driving circuit
Multiple first high voltage pack terminals coupling,
In the second high-pressure side driving circuit and the multiple high voltage pack terminal in the multiple high-pressure side driving circuit
Multiple second high voltage pack terminals coupling,
Wherein, it is arranged between two of them the first high voltage pack terminal in the multiple first high voltage pack terminal
State the second high voltage pack terminal of at least one of multiple second package terminals.
Preferably, the first spacing between two high voltage pack terminals coupled respectively different high-pressure side driving circuits is not
Less than the first preset value, with ensure respectively between two high voltage pack terminals of different high-pressure side driving circuits coupling electrically every
From.
Preferably, first preset value is 1mm.
Preferably, the package assembling further includes pipe core welding disc,
The package terminal of the package assembling is located at around the pipe core welding disc,
First high-pressure side driving circuit and the second high-pressure side driving circuit are located on the pipe core welding disc.
Preferably, the package assembling is QFN encapsulation.
Preferably, after the package assembling powers on, respectively from different high-pressure side driving circuits coupling two high press seals
The voltage filled between terminal is not less than the first predeterminated voltage,
First predeterminated voltage is arranged bigger, and first spacing also needs to be arranged bigger.
Preferably, the two adjacent high voltage pack terminals coupled respectively with two terminals of same high-pressure side driving circuit
Between the second spacing be less than first spacing,
And after the package assembling powers on, coupled respectively with two terminals of same high-pressure side driving circuit adjacent
Voltage between two high voltage pack terminals is not more than the second predeterminated voltage,
The value of second predeterminated voltage is less than the value of first predeterminated voltage.
Preferably, further include the processing circuit being arranged on the pipe core welding disc, sequence circuit and with the package assembling
The low pressure side drive circuit that is correspondingly arranged of high-pressure side driving circuit, the package terminal of the package assembling further includes and each institute
The seal pressure terminal of low pressure side drive circuit coupling is stated,
Each high-pressure side driving circuit output that the processing circuit and sequence circuit control the package assembling is corresponding
High-voltage driven signal, and each low pressure side drive circuit of control export corresponding low voltage drive signal,
Each high-voltage driven signal is output to by the high voltage pack terminal of the package assembling positioned at the encapsulation group
The grid of corresponding each high side transistor outside part,
Each low voltage drive signal is output to by the seal pressure terminal of the package assembling positioned at the encapsulation group
The grid of corresponding each low side transistors outside part,
Each high side transistor is together with corresponding each low side transistor pairwise coupling, to constitute
Half-bridge drive integrated circuit.
Preferably, the half-bridge drive integrated circuit is connected with multiwinding machine,
Wherein, in the node and the multiwinding machine that every a pair high side transistor and low side transistor are connected
A corresponding winding be connected.
It preferably, further include the pwm control circuit being arranged on the pipe core welding disc,
Part peripheral circuit in the pwm control circuit and the package assembling constitutes Switching Power Supply, the switch
Power supply is used to provide supply voltage to each high-pressure side driving circuit and low pressure side drive circuit of the package assembling.
Preferably, further include third high-pressure side driving circuit and coupled with the third high-pressure side driving circuit multiple
Three high voltage pack terminals,
First high-pressure side driving circuit, the second high-pressure side driving circuit and third high-pressure side driving circuit pass through respectively
The first high voltage pack terminal, the second high voltage pack terminal and the output of third high voltage pack terminal are for driving three-winding motor
High-voltage driven signal.
Preferably, each high-pressure side driving circuit of the package assembling is integrated in the first chip,
Each low pressure side drive circuit, the processing circuit and the sequence circuit of the package assembling are integrated in the second chip
In,
First chip and the second chip are arranged on the pipe core welding disc, and first chip and the second chip
And the current potential for the one side that the pipe core welding disc contacts is identical as the current potential of the pipe core welding disc.
It preferably, include DMOS circuit of the pressure voltage not less than third predeterminated voltage in first chip,
It include cmos circuit in second chip, but not including that pressure voltage is higher than the DMOS of the third predeterminated voltage
Circuit.
Preferably, first high-voltage driving circuit includes the first transistor and second transistor, and second high pressure is driven
Dynamic circuit includes third transistor and the 4th transistor,
First the first high pressure in the first terminal of the first transistor and the multiple first high voltage pack terminal
Package terminal coupling,
The Second terminal of the first transistor is connected with the first terminal of the second transistor, and connected first segment
Point is coupled with second the first high voltage pack terminal in the multiple first high voltage pack terminal,
The first high pressure of third in the Second terminal of the second transistor and the multiple first high voltage pack terminal
Package terminal coupling,
First the first high pressure in the first terminal of the third transistor and the multiple second high voltage pack terminal
Package terminal coupling,
The Second terminal of the third transistor is connected with the first terminal of the 4th transistor, and the second connected section
Point is coupled with second the second high voltage pack terminal in the multiple second high voltage pack terminal,
The Second terminal of 4th transistor and the second high pressure of third in the multiple second high voltage pack terminal
Package terminal coupling.
Preferably, second first high voltage pack terminal and second second high voltage pack terminal are located at described
The first area of package assembling,
First first high voltage pack terminal and the first high voltage pack terminal of the third are located at the encapsulation group
The second area of part,
First second high voltage pack terminal and the second high voltage pack terminal of the third are located at the encapsulation group
The third region of part,
Wherein, the second area is between the first area and third region.
Preferably, coupling between the terminal of each high-pressure side driving circuit of the package assembling and each high voltage pack terminal
The path of conjunction includes rerouting layer and metal lead wire,
The rewiring layer is by after the position rearrangement of each terminal of the high-pressure side driving circuit, then by described
Metal lead wire is electrically connected with the corresponding high voltage pack terminal.
Preferably, coupling between the terminal of each high-pressure side driving circuit of the package assembling and each high voltage pack terminal
The path of conjunction includes rerouting layer and metal lead wire,
The rewiring layer is extended near the terminal of corresponding high-pressure side driving circuit by the high voltage pack terminal
Afterwards, then by the metal lead wire with the terminal of corresponding high-pressure side driving circuit it is electrically connected.
Preferably, second first high voltage pack terminal by first reroute layer and the first metal lead wire with it is corresponding
High voltage pack coupling,
Second second high voltage pack terminal reroutes layer and the second metal lead wire and corresponding high pressure by second
Encapsulation coupling.
Preferably, the first rewiring layer is connected with the first node, and passes through first metal lead wire and institute
Second the first high voltage pack terminal is stated to be connected,
The second rewiring layer is connected with the second node, and passes through second metal lead wire and described second
Second high voltage pack terminal is connected.
Preferably, first metal lead wire is connected with the first node, and reroutes layer and institute by described first
Second the first high voltage pack terminal is stated to be connected,
Second metal lead wire is connected with the second node, and reroutes and described second the by described second
Two high voltage pack terminals are connected.
Preferably, the first rewiring layer and second first high voltage pack terminal are located in same level,
And from second first high voltage pack terminal to extending about at the first node,
The second rewiring layer and second second high voltage pack terminal are located in same level, and by described
To extending about at the second node at second the second high voltage pack terminal.
Therefore according to package assembling provided by the utility model, driven with the first high-pressure side in package assembling
It is provided with and the second high-pressure side in package assembling between any two the first high voltage pack terminal of the terminal coupling of dynamic circuit
At least one second high voltage pack terminal of the terminal coupling of driving circuit, and make and the different high-pressure side driving circuits
The first spacing between two high voltage pack terminals of terminal coupling is not less than preset value, to ensure two high voltage pack terminals
Between electrical isolation, be conducive to improve package assembling each package terminal flexible topology and improve package assembling can
By property.
Detailed description of the invention
By referring to the drawings to the description of the utility model embodiment, above-mentioned and other mesh of the utility model
, feature and advantage will be apparent from, in the accompanying drawings:
Fig. 1 is the structural schematic diagram according to package assembling provided by the embodiment of the utility model；
Fig. 2 is the first high-pressure side driving circuit and the second high-pressure side in the package assembling according to the utility model embodiment
The structural schematic diagram of driving circuit；
Fig. 3 is the partial structure diagram of motor-drive circuit.
Specific embodiment
Hereinafter reference will be made to the drawings is more fully described the utility model.In various figures, identical component part uses
Similar appended drawing reference indicates.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.Furthermore, it is possible to not
Certain well known parts are shown.For brevity, the structure obtained after several steps can be described in a width figure.?
Described hereafter is this hairs.Bright many specific details, such as each module or process, it is practical to be more clearly understood that
It is novel.But just as the skilled person will understand, this reality can not be realized according to these specific details
With novel.
Fig. 1 is structural schematic diagram according to package assembling 100 provided by the embodiment of the utility model, in package assembling 100
It include mainly the first high-pressure side driving circuit 111 and the second high-pressure side driving circuit 112, in package assembling 100, the first high pressure
Side drive circuit 111 and the second high-pressure side driving circuit 112 are integrated in chip, and (chip in the application refers both to not seal
The semiconductor bare chip of dress) in 11, certainly in other embodiments, each high-pressure side driving circuit in the package assembling
It can be integrated in different chips.Package assembling 100 further includes holding respectively with three of the first high-pressure side driving circuit 111
Three first high voltage packs terminal A, B, C of sub- VB1, HO1, VS1 coupling, and further include driving electricity with the second high-pressure side respectively
Three second high voltage pack terminals D, E, F of three terminals VB2, HO2, VS2 coupling on road 112.Wherein, described three first high
It is provided in three second package terminals at least between two of them the first high voltage pack terminal in pressure package terminal
One the second high voltage pack terminal.For example, in the present embodiment, first the first high voltage pack terminal A coupled with terminal VB1
It is second high that second coupled with terminal HO2 is provided between second the first high voltage pack terminal B coupled with terminal HO1
Press package terminal E.Certainly, in other embodiments, any one of second high voltage pack terminal D, E, F can be set
In the interval that first high voltage pack terminal A, B, C is limited.In order to realize between the first high voltage pack terminal insertion setting the
The setting of two high voltage pack terminals, in the package assembling 100 of the present embodiment, second the first high voltage pack terminal B and second
A second high voltage pack terminal E constitutes first group of high voltage pack terminal of package assembling 100, first group of high voltage pack terminal
Positioned at the first area of package assembling 100, the first high voltage pack terminal C structure of first the first high voltage pack terminal A and third
At second group of high voltage pack terminal of package assembling 100, second group of high voltage pack terminal is located at the second of package assembling 100
Region, first the one or two high voltage pack terminal D and the second high voltage pack terminal F of third constitute the third of package assembling 100
Group high voltage pack terminal, the third group high voltage pack terminal is located at the third region of package assembling 100, wherein secondth area
Domain is between the first area and third region.In addition, as shown in Figure 1, package assembling 100 still further comprises tube core weldering
132 package assembling 100 of disk each package terminal 131 (contained in each package terminal 131 above-mentioned package terminal A, B, C,
D, E, F) it is located at around pipe core welding disc 132, such as each package terminal 131 is located at four sides of pipe core welding disc 132, that is, exists
In the present embodiment, package assembling 100 is QFN (quad flat non-pin) encapsulation, the first area, second area and third
Region is sequentially arranged in a side of pipe core welding disc 132.In other embodiments, first group in the first area
Include in high voltage pack terminal and part the first high voltage pack terminal and described three in three first high voltage pack terminals
Part the second high voltage pack terminal in a second high voltage pack terminal, the remainder in three first high voltage pack terminals
It point is entirely located in the second area, using second group of high voltage pack terminal as the package assembling, and described three the
Remainder in two high voltage pack terminals is entirely located in the third region, high using the third group as the package assembling
Press package terminal.First high-pressure side driving circuit 111 and the second high-pressure side driving circuit 112 are respectively positioned on pipe core welding disc 132, i.e.,
In the present embodiment, chip 11 is located in pipe core welding disc 132, the first high-pressure side driving circuit 111 and the second high-pressure side driving electricity
The back side (one side opposite with active face) that each terminal on road 112 is respectively positioned on chip 11 on the active face of chip 11 is mounted on pipe
On core pad 132, and when there are the electrodes that when electrode, can make on the back side of chip and pipe core welding disc 132 at the back side of chip 11
Current potential having the same, such as it is electrically connected the rear electrode of chip 11 with pipe core welding disc 132, pipe core welding disc 132 is in addition to conduct
The mechanical support carrier of chip 11 is also used as the ground pad of chip 11 or connects power pad, naturally it is also possible to as
The heat dissipation bonding pad of chip 11.
The high-voltage driven signal for usually requiring to export upper hectovolt according to package assembling provided by the embodiment of the utility model comes
Drive external high pressure side transistor, to finally provide driving signal for permanent magnet synchronous motor, therefore with the package assembling
(each high-pressure side driving circuit contains first high-pressure side driving circuit and second high for each high-pressure side driving circuit
Pressure side drive circuit) the high voltage pack terminal of terminal coupling need to export higher voltage, and from high-pressure side described in different groups
Two high voltage pack terminals (as described in one of them the first high voltage pack terminal and the one of institute of driving circuit coupling
State the second high voltage pack terminal) between the first spacing not less than the first preset value, to ensure to drive electricity from different high-pressure sides respectively
Electrical isolation between two high voltage pack terminals of the terminal coupling on road, first spacing can be 1mm.Such as in package assembling
In 100, the space D be between high voltage pack terminal B and high voltage pack terminal E is at least 1mm, and the first area and second
Spacing between region will need at least described first preset value, to ensure high voltage pack terminal E and second group of high pressure
The spacing between high voltage pack terminal in package terminal is not less than the preset value, such as high voltage pack terminal E and high press seal
The space D ae between terminal A is filled nor less than 1mm.Equally, the spacing between the second area and third region is also required to not
Less than the first predetermined value, in high voltage pack terminal described in ensuring described second group high voltage pack terminal and third group institute
The minimum spacing between the package terminal in high voltage pack terminal is stated not less than first preset value, such as makes package terminal C
Space D cd between package terminal D is not less than 1mm.
In the present embodiment, it after package assembling 100 powers on, is coupled respectively from the terminal of different high-pressure side driving circuits
Voltage between two high voltage pack terminals is not less than the first predeterminated voltage, such as high voltage pack terminal B and high voltage pack terminal E
Between voltage difference be at least 80V, usual situation is upper hectovolt even several hectovolts.In general, first spacing is needed according to institute
The first predeterminated voltage is stated to set, it is however generally that, first predeterminated voltage is arranged bigger, and first spacing also needs to be arranged
It obtains bigger.And in the present embodiment, after the package assembling 100 powers on, respectively with two of same high-pressure side driving circuit
Voltage between the adjacent two high voltage pack terminal of terminal coupling is not more than the second predeterminated voltage, such as high voltage pack terminal
Voltage difference between A and high voltage pack terminal C between voltage difference and high voltage pack terminal D and high voltage pack terminal F is little
In second predeterminated voltage, such as no more than 20V.So coupled respectively with two terminals of same high-pressure side driving circuit
The second spacing between two adjacent high voltage pack terminals is less than first spacing, such as high voltage pack terminal A and high pressure
Space D df between space D ac and high voltage pack terminal D between package terminal C and high voltage pack terminal F is usually all provided with
It is set to and is less than 1mm, for example, 0.2mm.In addition, in the present embodiment, spacing between the first area and second area or
Spacing between the second area and third region can be set larger, each potted ends in the such as larger than described first area
Spacing between son, then may be used also between the first area and second area or between the second area and third region
Other package terminals of the package assembling to be flexibly arranged as needed, to be conducive to the cabling layout of package assembling.
For example, in package assembling 100, between high voltage pack end E and high voltage pack terminal A and high voltage pack terminal C and high press seal
Other input and output package terminals of package assembling 100 can be set between dress terminal D.
Further, in the present embodiment, the package assembling 100 further includes the processing being arranged on pipe core welding disc 132
Circuit, sequence circuit and low pressure side drive circuit (these electricity being correspondingly arranged with the high-pressure side driving circuit of the package assembling
Road does not mark specifically in Fig. 1), the package terminal of the package assembling further includes and each low pressure side drive circuit
The seal pressure terminal of coupling, wherein the processing circuit and sequence circuit control each high-pressure side driving of the package assembling
The corresponding high-voltage driven signal of circuit output, and each low pressure side drive circuit of control export corresponding low-voltage driving letter
Number.
As shown in Fig. 2, in the present embodiment, each high-pressure side driving circuit is by two transistors interconnected
The half-bridge circuit of composition is constituted.As shown in Fig. 2 (a), the first high-voltage driving circuit 111 includes the first transistor HS1 and second brilliant
The first terminal VB1 of body pipe LS1, the first transistor HS1 and first in three first high voltage pack terminals are first high
Package terminal A coupling is pressed, the Second terminal of the first transistor HS1 is connected with the first terminal of second transistor LS1, and be connected
Node HO1 is coupled with second the first high voltage pack terminal B in three first high voltage pack terminals, second transistor
The Second terminal VS1 of LS1 is coupled with the first high voltage pack terminal C of third in three first high voltage pack terminals.Such as
Shown in Fig. 2 (b), the second high-voltage driving circuit 112 includes third transistor HS2 and the 4th transistor LS2, third transistor HS2
First terminal VB2 coupled with first the first high voltage pack terminal D in three second high voltage pack terminals, third is brilliant
The Second terminal of body pipe HS2 is connected with the first terminal of the 4th transistor LS2, and the node HO2 being connected and described three second
In high voltage pack terminal second the first high voltage pack terminal E coupling, the Second terminal VS2 of the 4th transistor LS2 with it is described
Third the second high voltage pack terminal F coupling in three the second high voltage pack terminals.In addition, the third of the first transistor HS1
End is connected with the third end of second transistor LS1, to receive the control signal of the first transistor HS1 and second transistor LS1, the
The third end of three transistor HS2 is connected with the third end of the 4th transistor LS2, to receive third transistor HS2 and the 4th crystal
The control signal (not embodied in Fig. 2) of pipe LS2.
The group number of the low pressure side drive circuit of package assembling 100 is corresponding with the group number of the high-pressure side driving circuit to be set
It sets, for example including first low pressure side drive circuit corresponding with the first high-pressure side driving circuit 111, drives electricity with the second high-pressure side
The corresponding second low pressure side drive circuit in road 112.Each low pressure side drive circuit can also be by two crystalline substances interconnected
Body pipe is constituted, and the low voltage drive signal of the connected node output of two transistors is for being output to outside the package assembling
The grid of low side transistor is to control the switch state of the low side transistor, and in each high-pressure side driving circuit
The high-voltage driven signal of the connected node output of two transistors is used to be output to the high-pressure side crystal outside the package assembling
The grid of pipe, to control the switch state of the high side transistor.Wherein, each low voltage drive signal is by the encapsulation group
The seal pressure terminal of part is output to the grid of corresponding each low side transistors outside the package assembling, each described
High side transistor is together with corresponding each low side transistor pairwise coupling, to constitute the integrated electricity of half-bridge driven
Road.In the present embodiment, shown package assembling 100 is used to drive multiwinding machine, i.e. multiphase permanent magnet synchronous motor, then each institute
Show high side transistor and low side transistor couple the half-bridge drive circuit to be formed node be used for and the multiwinding machine
In a winding be connected, with to the winding output drive signal.Such as package assembling 100 is then encapsulated for driving 3 phase motors
Component further includes third high-pressure side driving circuit and three third height coupling with the terminal of the third high-pressure side driving circuit
Package terminal is pressed, and the third low pressure side drive circuit that is correspondingly arranged with the third high-pressure side driving circuit and with described the
The seal pressure terminal of three low pressure side drive circuits coupling, the third high-pressure side driving circuit and third low pressure side drive circuit
Respectively drive the high side transistor and low side transistor outside the package assembling.Wherein, the first high-pressure side driving
Circuit, the second high-pressure side driving circuit and third high-pressure side driving circuit pass through the first high voltage pack terminal, second respectively
High voltage pack terminal and third high voltage pack terminal export the high-voltage driven signal for driving three-winding motor.Fig. 3 is shown
Half-bridge drive circuit described in first group in three-phase motor driving circuit (other groups and be not entirely shown), high side transistor
TH1 and low side transistor TL1 are coupled between input terminal VIN and output end VSS, and the node D1 and three-phase electricity that the two is connected
The first winding L1 in machine M is connected, with to the winding output drive signal, wherein the gate terminal of high side transistor TH1 is received
The gate terminal of the high-voltage driven signal HO1 of first high-pressure side driving circuit output, low side transistor TL1 receive described the
The low voltage drive signal LO1 of one low pressure side drive circuit output.
In package assembling 100, the processing circuit, sequence circuit and low pressure side drive circuit are integrated in chip 12
In, and the terminal of the processing circuit, sequence circuit and low pressure side drive circuit is respectively positioned on the active face of chip 12, chip 12
The back side (one side opposite with active face) be mounted on pipe core welding disc 132, can be with and when the back side of chip 12 is there are when electrode
Make the electrode and the current potential having the same of pipe core welding disc 132 on the back side of chip, such as makes the rear electrode and tube core of chip 12
Pad 132 is electrically connected, and pipe core welding disc 132 is also used as connecing for chip 12 in addition to the mechanical support carrier as chip 12
Ground pad connects power pad, naturally it is also possible to the heat dissipation bonding pad as chip 12.
Package assembling can also further comprise the pwm control circuit being arranged on pipe core welding disc 132, the PWM control electricity
Part peripheral circuit in road and package assembling 100 constitutes Switching Power Supply, and the Switching Power Supply is used for the package assembling
Each high-pressure side driving circuit and low pressure side drive circuit provide supply voltage.Wherein, the pwm control circuit can also be collected
At in chip 12.In addition, including DMOS of the pressure voltage not less than third predeterminated voltage in package assembling 100, in chip 11
Circuit, wherein the third predeterminated voltage is usually upper the hectovolt even super-pressure of several hectovolts.It include CMOS electricity in chip 12
Road, but not including that pressure voltage is higher than the DMOS circuit of the third predeterminated voltage.
Shown in continuing to refer to figure 1, each package terminal 131 of package assembling 100 with it is each on chip 11 and chip 12
Coupling path between terminal can only include that each terminal on metal lead wire, such as chip 12 passes through metal lead wire and envelope
Corresponding package terminal electrical connection in each package terminal 131 of arrangement 100, such as each low-pressure side in chip 12
Each terminal of driving circuit passes through metal lead wire and is electrically connected with corresponding seal pressure terminal.And the terminal on chip 12 is also
It is electrically connected by metal lead wire with the terminal on chip 11, such as processing circuit, sequence circuit and PWM control in chip 12
Terminal in circuit is connected by metal lead wire with terminal in chip 11.In addition, each high-pressure side of package assembling 100 drives electricity
Coupling path between the terminal on road and each high-pressure side package terminal includes rerouting floor and metal lead wire, the rewiring layer
After the position rearrangement of each terminal of the high-pressure side driving circuit, then by the metal lead wire by the rewiring
Layer is electrically connected with the corresponding high voltage pack terminal.Or the rewiring layer can be made by the high voltage pack terminal
Place extend to corresponding high-pressure side driving circuit terminal nearby after, then by the metal lead wire by the rewiring layer with it is right
The terminal for the high-pressure side driving circuit answered is electrically connected.In the package assembling 100, it can make each in the first area
A high voltage pack terminal is connected by the rewiring layer and metal lead wire terminal corresponding with corresponding high-pressure side driving circuit,
And make each high voltage pack terminal in the second area and third region only by metal lead wire and corresponding high-pressure side
The corresponding terminal of driving circuit is connected.Such as shown in Fig. 1, the current potential of high voltage pack terminal B is first passed through and high voltage pack terminal B
After the rewiring layer RDL1 of electrical connection draws and extend near at the terminal HO1 of the first high-pressure side driving circuit 111, then pass through
Metal lead wire Wb will reroute layer RDL1 and be electrically connected with terminal HO1, to realize between terminal HO1 and high voltage pack terminal B
Coupling.The current potential of high voltage pack terminal E first passes through the rewiring layer RDL2 being electrically connected with high voltage pack terminal E and draws and extend
Layer RDL2 and terminal will be rerouted by metal lead wire We again after near to the terminal HO2 of the second high-pressure side driving circuit 112
HO2 electrical connection, to realize the coupling between terminal HO2 and high voltage pack terminal E.High voltage pack terminal A, C pass through respectively
Metal lead wire Wa, Wc are directly connected with terminal VB1, VS1 in the first high-pressure side driving circuit 111, to realize high press seal
Fill terminal A, C coupling between terminal VB1, VS1 respectively.It is direct that high voltage pack terminal D, F pass through metal lead wire Wd, Wf respectively
Be connected with terminal VB2, VS2 in the second high-pressure side driving circuit 112, with realize high voltage pack terminal D, F respectively with end
Coupling between sub- VB2, VS2.In addition, as described in Figure 1, package assembling further includes each in package assembling 100 for encapsulating
Chip and the plastic-sealed body 134 for being encapsulated each package terminal in (endless total incapsulation) package assembling, each envelope of the package assembling
Dress terminal is exposed to the first surface of plastic-sealed body 134, can when the package assembling needs to be electrically connected with external pcb board
Be mounted on the first surface of plastic-sealed body 134 on pcb board, each package terminal of package assembling by welding layer with
Pcb board is connected.The pipe core welding disc 13 of the package assembling can also be selective exposed in the plastic-sealed body according to actual needs
134 first surface, with on pcb board heat dissipation bonding pad, ground pad, connect one in power pad and be electrically connected.
It should be noted that in above-mentioned each embodiment, the terminal in each high-pressure side driving circuit for three,
The high voltage pack terminal then coupled with the terminal of each high-voltage driving circuit is also for three, in fact, in other implementations
In example, the terminal in each high-pressure side driving circuit is not limited to three, can be multiple, then with each high-voltage driving circuit
Terminal coupling high voltage pack terminal be also not limited to 3, or it is multiple.Equally, corresponding low-pressure side is driven
The terminal number of circuit and the number of corresponding seal pressure terminal are also not limited to three, also all can be multiple.
Therefore according to package assembling provided by the utility model, so that being driven with the first high-pressure side in package assembling
It is provided with and the second high-pressure side in package assembling between any two the first high voltage pack terminal of the terminal coupling of dynamic circuit
At least one second high voltage pack terminal of the terminal coupling of driving circuit, and make and the different high-pressure side driving circuits
The first spacing between two high voltage pack terminals of terminal coupling is not less than preset value, to ensure two high voltage pack terminals
Between electrical isolation, be conducive to improve package assembling each package terminal flexible topology and improve package assembling can
By property.
It is as described above according to the embodiments of the present invention, these embodiments details all there is no detailed descriptionthe,
Also not limiting the utility model is only the specific embodiment.Obviously, as described above, many modification and change can be made
Change.These embodiments are chosen and specifically described to this specification, is in order to preferably explain the principles of the present invention and actually to answer
With so that skilled artisan be enable to utilize the utility model and repairing on the basis of the utility model well
Change use.The utility model is limited only by the claims and their full scope and equivalents.
Claims (21)
1. a kind of package assembling, which is characterized in that drive electricity including multiple high-pressure side driving circuits and with the multiple high-pressure side
Multiple high voltage pack terminals of road coupling,
It is more in the first high-pressure side driving circuit and the multiple high voltage pack terminal in the multiple high-pressure side driving circuit
A first high voltage pack terminal coupling,
It is more in the second high-pressure side driving circuit and the multiple high voltage pack terminal in the multiple high-pressure side driving circuit
A second high voltage pack terminal coupling,
Wherein, it is provided between two of them the first high voltage pack terminal in the multiple first high voltage pack terminal described more
The second high voltage pack terminal of at least one of a second high voltage pack terminal.
2. package assembling according to claim 1, which is characterized in that two coupled respectively from different high-pressure side driving circuits
The first spacing between a high voltage pack terminal is not less than the first preset value, with ensure respectively from different high-pressure side driving circuit couplings
Electrical isolation between the two high voltage pack terminals closed.
3. package assembling according to claim 2, which is characterized in that first preset value is 1mm.
4. package assembling according to claim 1, which is characterized in that the package assembling further includes pipe core welding disc,
The package terminal of the package assembling is located at around the pipe core welding disc,
First high-pressure side driving circuit and the second high-pressure side driving circuit are located on the pipe core welding disc.
5. package assembling according to claim 4, which is characterized in that the package assembling is QFN encapsulation.
6. package assembling according to claim 2, which is characterized in that after the package assembling powers on, respectively with difference
Voltage between two high voltage pack terminals of high-pressure side driving circuit coupling is not less than the first predeterminated voltage,
First predeterminated voltage is arranged bigger, and first spacing also needs to be arranged bigger.
7. package assembling according to claim 6, which is characterized in that held respectively with two of same high-pressure side driving circuit
The second spacing between the adjacent two high voltage pack terminal of son coupling is less than first spacing,
And after the package assembling powers on, adjacent two that are coupled respectively with two terminals of same high-pressure side driving circuit
Voltage between high voltage pack terminal is not more than the second predeterminated voltage,
The value of second predeterminated voltage is less than the value of first predeterminated voltage.
8. package assembling according to claim 4, which is characterized in that further include the processing being arranged on the pipe core welding disc
Circuit, sequence circuit and the low pressure side drive circuit being correspondingly arranged with the high-pressure side driving circuit of the package assembling, the envelope
The package terminal of arrangement further includes the seal pressure terminal coupled with each low pressure side drive circuit,
Each high-pressure side driving circuit that the processing circuit and sequence circuit control the package assembling exports corresponding high pressure
Driving signal, and each low pressure side drive circuit of control export corresponding low voltage drive signal,
Each high-voltage driven signal is output to outside the package assembling by the high voltage pack terminal of the package assembling
The grid of the corresponding each high side transistor in portion,
Each low voltage drive signal is output to outside the package assembling by the seal pressure terminal of the package assembling
The grid of the corresponding each low side transistors in portion,
Each high side transistor is together with corresponding each low side transistor pairwise coupling, to constitute half-bridge
Drive integrated circult.
9. package assembling according to claim 8, which is characterized in that the half-bridge drive integrated circuit and multiwinding machine
It is connected,
Wherein, pair in node and the multiwinding machine that every a pair high side transistor and low side transistor are connected
The winding answered is connected.
10. package assembling according to claim 8, which is characterized in that further include the PWM being arranged on the pipe core welding disc
Control circuit,
Part peripheral circuit in the pwm control circuit and the package assembling constitutes Switching Power Supply, the Switching Power Supply
For each high-pressure side driving circuit and low pressure side drive circuit offer supply voltage to the package assembling.
11. package assembling according to claim 1, which is characterized in that further include third high-pressure side driving circuit and with institute
Multiple third high voltage pack terminals of third high-pressure side driving circuit coupling are stated,
First high-pressure side driving circuit, the second high-pressure side driving circuit and third high-pressure side driving circuit pass through described respectively
First high voltage pack terminal, the second high voltage pack terminal and third high voltage pack terminal export the height for driving three-winding motor
Press driving signal.
12. package assembling according to claim 8, which is characterized in that each high-pressure side of the package assembling drives electricity
Road is integrated in the first chip,
Each low pressure side drive circuit, the processing circuit and the sequence circuit of the package assembling are integrated in the second chip,
First chip and the second chip are arranged on the pipe core welding disc, and first chip and the second chip and institute
The current potential for stating the one side of pipe core welding disc contact is identical as the current potential of the pipe core welding disc.
13. package assembling according to claim 12, which is characterized in that be not less than in first chip including pressure voltage
The DMOS circuit of third predeterminated voltage,
It include cmos circuit in second chip, but not including that pressure voltage is higher than the DMOS electricity of the third predeterminated voltage
Road.
14. package assembling according to claim 1, which is characterized in that first high-voltage driving circuit includes first brilliant
Body pipe and second transistor, second high-voltage driving circuit include third transistor and the 4th transistor,
First the first high voltage pack in the first terminal of the first transistor and the multiple first high voltage pack terminal
Terminal coupling,
The Second terminal of the first transistor is connected with the first terminal of the second transistor, and connected first node with
Second the first high voltage pack terminal coupling in the multiple first high voltage pack terminal,
The first high voltage pack of third in the Second terminal of the second transistor and the multiple first high voltage pack terminal
Terminal coupling,
First the first high voltage pack in the first terminal of the third transistor and the multiple second high voltage pack terminal
Terminal coupling,
The Second terminal of the third transistor is connected with the first terminal of the 4th transistor, and connected second node with
Second the second high voltage pack terminal coupling in the multiple second high voltage pack terminal,
The Second terminal of 4th transistor and the second high voltage pack of third in the multiple second high voltage pack terminal
Terminal coupling.
15. package assembling according to claim 14, which is characterized in that second first high voltage pack terminal and institute
The first area that second the second high voltage pack terminal is located at the package assembling is stated,
First first high voltage pack terminal and the first high voltage pack terminal of the third are located at the package assembling
Second area,
First second high voltage pack terminal and the second high voltage pack terminal of the third are located at the package assembling
Third region,
Wherein, the second area is between the first area and third region.
16. package assembling according to claim 1, which is characterized in that each high-pressure side of the package assembling drives electricity
The path coupled between the terminal on road and each high voltage pack terminal includes rerouting floor and metal lead wire,
The rewiring layer is by after the position rearrangement of each terminal of the high-pressure side driving circuit, then passes through the metal
Lead is electrically connected with the corresponding high voltage pack terminal.
17. package assembling according to claim 1, which is characterized in that each high-pressure side of the package assembling drives electricity
The path coupled between the terminal on road and each high voltage pack terminal includes rerouting floor and metal lead wire,
After the rewiring layer is extended near the terminal of corresponding high-pressure side driving circuit by the high voltage pack terminal, then
It is electrically connected by the metal lead wire with the terminal of corresponding high-pressure side driving circuit.
18. package assembling according to claim 15, which is characterized in that second first high voltage pack terminal passes through
First rewiring layer and the first metal lead wire are coupled with corresponding high voltage pack,
Second second high voltage pack terminal reroutes layer and the second metal lead wire and corresponding high voltage pack by second
Coupling.
19. package assembling according to claim 18, which is characterized in that
The first rewiring layer is connected with the first node, and passes through first metal lead wire and described second first
High voltage pack terminal is connected,
The second rewiring layer is connected with the second node, and passes through second metal lead wire and described second second
High voltage pack terminal is connected.
20. package assembling according to claim 18, which is characterized in that
First metal lead wire is connected with the first node, and reroutes layer and described second first by described first
High voltage pack terminal is connected,
Second metal lead wire is connected with the second node, and by described second reroute with it is described second second high
Package terminal is pressed to be connected.
21. package assembling according to claim 20, which is characterized in that described first reroutes layer and second the described
One high voltage pack terminal is located in same level, and from second first high voltage pack terminal to the first node
Place extends about,
The second rewiring layer and second second high voltage pack terminal are located in same level, and by described second
To extending about at the second node at a second high voltage pack terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821669481.5U CN208970505U (en) | 2018-10-15 | 2018-10-15 | A kind of package assembling |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821669481.5U CN208970505U (en) | 2018-10-15 | 2018-10-15 | A kind of package assembling |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208970505U true CN208970505U (en) | 2019-06-11 |
Family
ID=66758615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821669481.5U Withdrawn - After Issue CN208970505U (en) | 2018-10-15 | 2018-10-15 | A kind of package assembling |
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| CN (1) | CN208970505U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109273424A (en) * | 2018-10-15 | 2019-01-25 | 矽力杰半导体技术(杭州)有限公司 | A kind of package assembling |
-
2018
- 2018-10-15 CN CN201821669481.5U patent/CN208970505U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109273424A (en) * | 2018-10-15 | 2019-01-25 | 矽力杰半导体技术(杭州)有限公司 | A kind of package assembling |
| CN109273424B (en) * | 2018-10-15 | 2024-02-02 | 矽力杰半导体技术(杭州)有限公司 | Packaging assembly |
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Address after: 310051 No. 6 Lianhui Street, Xixing Street, Binjiang District, Hangzhou City, Zhejiang Province Patentee after: SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) Co.,Ltd. Address before: Room A1501-A1505 and A1509-A1511, 71 Building No. 90 Wensan Road, Xihu District, Hangzhou City, Zhejiang Province, 310012 Patentee before: SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) Co.,Ltd. |
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