CN107653441A - 一种在塑胶上生产pvd防菌膜的方法 - Google Patents

一种在塑胶上生产pvd防菌膜的方法 Download PDF

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CN107653441A
CN107653441A CN201710779538.0A CN201710779538A CN107653441A CN 107653441 A CN107653441 A CN 107653441A CN 201710779538 A CN201710779538 A CN 201710779538A CN 107653441 A CN107653441 A CN 107653441A
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麦世枝
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Abstract

本发明为一种在塑胶上生产PVD防菌膜的方法,使用本技术方案整个过程不需加温能够在不损伤塑胶工件的前提下镀膜,使用钛靶和硅靶进行基底膜镀制,塑胶的主要成分包含大量的碳原子,和硅原子具有良好的结合力,因此使用钛靶和硅靶进行基底膜的镀制能够增加膜层和工件的结合力,基底膜镀制完成后加入银靶溅射,使具有防菌效果的银均匀分布在硅化钛膜层中,形成具有防菌效果的防菌膜,另外在镀膜过程中工件挂在挂架上,工件在自转的同时公转,使溅射过程成膜均匀,并且能够避免局部温度过高损伤工件。

Description

一种在塑胶上生产PVD防菌膜的方法
技术领域
本发明涉及PVD生产技术领域,尤其涉及一种在塑胶上生产PVD防菌膜的方法。
背景技术
塑胶制品由于其易加工、使用周期长等特点在生活正广泛使用,其中不乏日常生活中经常接触的东西,家用品、儿童玩具、交通工具上扶手、电脑制品、手机等都是生活中常见的物品,这些塑胶制品上都不可避免的有大量细菌,甚至有人实验证明人们天天使用的手机比马桶上的细菌都多,因此人们希望能够有一种有效的防菌方式保护人们使用的塑胶制品。
PVD薄膜因其有高硬度、低摩擦系数、很好的耐磨性和化学稳定性等优点,越来越受人们的喜爱。纳米银是科学证明有效的抑菌材质,现在人们已经开始使用含有纳米银的PVD薄膜进行防菌,但是PVD薄膜在镀设过程中通常需要加温,而塑胶制品具有燃点低的特点,因此很难将PVD薄膜直接镀设在塑胶制品上,塑胶制品表面镀制PVD防菌膜也成了难点。
发明内容
本发明的目的是针对以上技术问题,提供一种在塑胶上生产PVD防菌膜的方法。
一种在塑胶上生产PVD防菌膜的方法,包括如下步骤:
(1)预处理:将塑胶工件清洁干净并低温吹干;
(2)真空处理:预处理后的工件放上挂架并放入真空炉内,对金属挂架加载偏压,真空炉内抽真空0.5-1.5x10-3Pa,启动转盘,使工件在挂架上转动,同时挂架在真空炉内转动;
(3)基础膜镀制:开启电源调至30-40V,占空比为20%-30%,通入氩气使真空度达到0.3-1Pa,启动钛靶和硅靶,使工件表面形成TiSi2膜层;
(4)防菌膜镀制:保持钛靶和硅靶,降低氩气流量,通入乙炔气体,随后开启银靶在工件表面形成TiSi2/Ag防菌膜;
(5)镀膜完成:先关闭钛靶和硅靶,再关闭银靶,然后关闭所有气体,加强抽气5-10分钟,除去真空炉内残留的碳离子,将真空炉放空气至大气压,取出工件完成镀膜。
在其中一个实施例中,所述步骤(1)中工件清洁为塑胶清洁剂清洁或超声波清洁中的一种,吹干温度不超过60℃。
在其中一个实施例中,所述步骤(2)中金属挂架加载偏压-200—-300V。
在其中一个实施例中,所述步骤(3)中氩气的流量为100-250sccm,靶电流为10A,电镀时间为2-10分钟。
在其中一个实施例中,所述步骤(4)中氩气流量降低至40-80sccm,乙炔气体流量为150-250sccm,乙炔气体通入时间为1-5分钟。
在其中一个实施例中,所述步骤(4)中银靶的靶电流为0.5-1A,银靶溅射时间为1-4分钟。
综上所述,使用上述技术方案在塑胶上进行PVD防菌膜的镀制,整个过程不需加温能够在不损伤塑胶工件的前提下镀膜,使用钛靶和硅靶进行基底膜镀制,塑胶的主要成分包含大量的碳原子,和硅原子具有良好的结合力,因此使用钛靶和硅靶进行基底膜的镀制能够增加膜层和工件的结合力,基底膜镀制完成后加入银靶溅射,使具有防菌效果的银均匀分布在硅化钛膜层中,形成具有防菌效果的防菌膜,另外在镀膜过程中工件挂在挂架上,工件在自转的同时公转,使溅射过程成膜均匀,并且能够避免局部温度过高损伤工件。
具体实施方式
为了使本发明的目的、技术方案及优点更加清晰,以下结合实施例,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以更好地理解本发明的技术方案,并不用于限定本发明。
一种在塑胶上生产PVD防菌膜的方法,包括如下步骤:
(1)预处理:将塑胶工件清洁干净并低温吹干;
(2)真空处理:预处理后的工件放上挂架并放入真空炉内,对金属挂架加载偏压,真空炉内抽真空0.5-1.5x10-3Pa,启动转盘,使工件在挂架上转动,同时挂架在真空炉内转动;
(3)基础膜镀制:开启电源调至30-40V,占空比为20%-30%,通入氩气使真空度达到0.3-1Pa,启动钛靶和硅靶,使工件表面形成TiSi2膜层;
(4)防菌膜镀制:保持钛靶和硅靶,降低氩气流量,通入乙炔气体,随后开启银靶在工件表面形成TiSi2/Ag防菌膜;
(5)镀膜完成:先关闭钛靶和硅靶,再关闭银靶,然后关闭所有气体,加强抽气5-10分钟,除去真空炉内残留的碳离子,将真空炉放空气至大气压,取出工件完成镀膜。整体镀膜过程中,真空炉内均不加温,且真空炉的水冷系统运行正常,能够将整体过程的温度控制在60℃以下,在不损伤塑胶工件的情况下完成镀膜。另外,工件置于挂架上转动,而挂架在真空炉上转动,使得工件在镀膜过程中同时进行自转和公转,因此工件在镀膜过程中膜层均匀并且能够避免局部镀膜过程由于靶材溅射升温过多,损伤工件。抽气去除残留的乙炔中的碳离子,避免碳离子附着上PVD膜层,影响PVD膜层颜色。
在其中一个实施例中,所述步骤(1)中工件清洁为塑胶清洁剂清洁或超声波清洁中的一种,吹干温度不超过60℃。对工件进行清洁有多种方式,使工件在镀膜前保持干净干燥的表面,利于提高靶材在工件表面的附着力,提高膜层的结合力,从而提高PVD镀膜质量。
在其中一个实施例中,所述步骤(2)中金属挂架加载偏压-200—-300V。
在其中一个实施例中,所述步骤(3)中氩气的流量为100-250sccm,靶电流为10A,电镀时间为2-10分钟。电镀时间能够控制基底膜的厚度,电镀时间短则会产生透明的黄色镀膜,时间加长膜层加厚则膜层会成咖色且透明度下降,根据具体产品镀膜要求进行镀膜时间的控制。
在其中一个实施例中,所述步骤(4)中氩气流量降低至40-80sccm,乙炔气体流量为150-250sccm,乙炔气体通入时间为1-5分钟。
在其中一个实施例中,所述步骤(4)中银靶的靶电流为0.5-1A,银靶溅射时间为1-4分钟。
实施例1
一种在塑胶上生产PVD防菌膜的方法,包括如下步骤:
(1)预处理:将塑胶工件清洁干净并在50℃条件下吹干,工件清洁为塑胶清洁剂清洁;
(2)真空处理:预处理后的工件放上挂架并放入真空炉内,对金属挂架加载偏压-200V,真空炉内抽真空0.5x10-3Pa,启动转盘,使工件在挂架上转动,同时挂架在真空炉内转动;
(3)基础膜镀制:开启电源调至30V,占空比为20%,通入流量为100sccm的氩气使真空度达到0.3Pa,启动钛靶和硅靶,靶电流为10A,电镀时间为2分钟,使工件表面形成TiSi2膜层;
(4)防菌膜镀制:保持钛靶和硅靶,降低氩气流量至40sccm,通入流量为150sccm的乙炔气体1分钟,随后开启银靶在工件表面形成TiSi2/Ag防菌膜,银靶的靶电流为0.5A,银靶溅射时间为1分钟;
(5)镀膜完成:先关闭钛靶和硅靶,再关闭银靶,然后关闭所有气体,加强抽气5分钟,除去真空炉内残留的碳离子,将真空炉放空气至大气压,取出工件完成镀膜。
实施例2
一种在塑胶上生产PVD防菌膜的方法,包括如下步骤:
(1)预处理:将塑胶工件清洁干净并在52℃条件下吹干,工件清洁为塑胶清洁剂清洁;
(2)真空处理:预处理后的工件放上挂架并放入真空炉内,对金属挂架加载偏压-250V,真空炉内抽真空1.3x10-3Pa,启动转盘,使工件在挂架上转动,同时挂架在真空炉内转动;
(3)基础膜镀制:开启电源调至32V,占空比为25%,通入流量为170sccm的氩气使真空度达到0.7Pa,启动钛靶和硅靶,靶电流为10A,电镀时间为4分钟,使工件表面形成TiSi2膜层;
(4)防菌膜镀制:保持钛靶和硅靶,降低氩气流量至50sccm,通入流量为200sccm的乙炔气体2分钟,随后开启银靶在工件表面形成TiSi2/Ag防菌膜,银靶的靶电流为0.6A,银靶溅射时间为2分钟;
(5)镀膜完成:先关闭钛靶和硅靶,再关闭银靶,然后关闭所有气体,加强抽气6分钟,除去真空炉内残留的碳离子,将真空炉放空气至大气压,取出工件完成镀膜。
实施例3
一种在塑胶上生产PVD防菌膜的方法,包括如下步骤:
(1)预处理:将塑胶工件清洁干净并在54℃条件下吹干,工件清洁超声波清洁;
(2)真空处理:预处理后的工件放上挂架并放入真空炉内,对金属挂架加载偏压-220V,真空炉内抽真空1.0x10-3Pa,启动转盘,使工件在挂架上转动,同时挂架在真空炉内转动;
(3)基础膜镀制:开启电源调至34V,占空比为27%,通入流量为200sccm的氩气使真空度达到0.5Pa,启动钛靶和硅靶,靶电流为10A,电镀时间为6分钟,使工件表面形成TiSi2膜层;
(4)防菌膜镀制:保持钛靶和硅靶,降低氩气流量至60sccm,通入流量为180sccm的乙炔气体3分钟,随后开启银靶在工件表面形成TiSi2/Ag防菌膜,银靶的靶电流为0.7A,银靶溅射时间为3分钟;
(5)镀膜完成:先关闭钛靶和硅靶,再关闭银靶,然后关闭所有气体,加强抽气7分钟,除去真空炉内残留的碳离子,将真空炉放空气至大气压,取出工件完成镀膜。
实施例4
一种在塑胶上生产PVD防菌膜的方法,包括如下步骤:
(1)预处理:将塑胶工件清洁干净并在56℃条件下吹干,工件清洁为超声波清洁;
(2)真空处理:预处理后的工件放上挂架并放入真空炉内,对金属挂架加载偏压-280V,真空炉内抽真空0.8x10-3Pa,启动转盘,使工件在挂架上转动,同时挂架在真空炉内转动;
(3)基础膜镀制:开启电源调至37V,占空比为23%,通入流量为230sccm的氩气使真空度达到0.6Pa,启动钛靶和硅靶,靶电流为10A,电镀时间为8分钟,使工件表面形成TiSi2膜层;
(4)防菌膜镀制:保持钛靶和硅靶,降低氩气流量至70sccm,通入流量为230sccm的乙炔气体4分钟,随后开启银靶在工件表面形成TiSi2/Ag防菌膜,银靶的靶电流为0.8A,银靶溅射时间为4分钟;
(5)镀膜完成:先关闭钛靶和硅靶,再关闭银靶,然后关闭所有气体,加强抽气8分钟,除去真空炉内残留的碳离子,将真空炉放空气至大气压,取出工件完成镀膜。
实施例5
一种在塑胶上生产PVD防菌膜的方法,包括如下步骤:
(1)预处理:将塑胶工件清洁干净并在58℃条件下吹干,工件清洁为超声波清洁;
(2)真空处理:预处理后的工件放上挂架并放入真空炉内,对金属挂架加载偏压-300V,真空炉内抽真空1.5x10-3Pa,启动转盘,使工件在挂架上转动,同时挂架在真空炉内转动;
(3)基础膜镀制:开启电源调至40V,占空比为30%,通入流量为250sccm的氩气使真空度达到1Pa,启动钛靶和硅靶,靶电流为10A,电镀时间为2-10分钟,使工件表面形成TiSi2膜层;
(4)防菌膜镀制:保持钛靶和硅靶,降低氩气流量至80sccm,通入流量为250sccm的乙炔气体5分钟,随后开启银靶在工件表面形成TiSi2/Ag防菌膜,银靶的靶电流为1A,银靶溅射时间为4分钟;
(5)镀膜完成:先关闭钛靶和硅靶,再关闭银靶,然后关闭所有气体,加强抽气10分钟,除去真空炉内残留的碳离子,将真空炉放空气至大气压,取出工件完成镀膜。
实施例6
对实施例1-5所得镀制PVD防菌膜的塑胶工件的膜层结合力进行实验数据测量,结果如下表所示:
实施例 1 2 3 4 5
结合力(N) 62 63.8 65 64 68
由实验结果可知,使用本技术方案得到的塑胶表面的PVD防菌膜的膜层结合力均大于60N,则说明膜层结合力较优,能满足普通塑胶产品需求。
实施例7
实施例1-5的塑胶工件均为相同材质的门把手,取普通常用与实施例1-5相同材质的塑胶门把手为对比组,合计六组样品在相同使用环境下分别测量6小时和12小时后表面的菌落数,结果如下表所示:
由实验结果可知,使用本技术方案的具有PVD防菌膜的塑胶门把手和普通门把手相比,其防菌效果显著,具有很高的实际使用价值。
以上所述实施方式仅是本发明的优选实施方式,应当指出的是,对于本技术领域的普通技术人员,在不脱离本发明原理的前提下,还可以做出改进和变形,这些改进和变形也应视为不脱离本发明的保护范围。

Claims (6)

1.一种在塑胶上生产PVD防菌膜的方法,其特征在于包括如下步骤:
(1)预处理:将塑胶工件清洁干净并低温吹干;
(2)真空处理:预处理后的工件放上挂架并放入真空炉内,对金属挂架加载偏压,真空炉内抽真空0.5-1.5x10-3Pa,启动转盘,使工件在挂架上转动,同时挂架在真空炉内转动;
(3)基础膜镀制:开启电源调至30-40V,占空比为20%-30%,通入氩气使真空度达到0.3-1Pa,启动钛靶和硅靶,使工件表面形成TiSi2膜层;
(4)防菌膜镀制:保持钛靶和硅靶,降低氩气流量,通入乙炔气体,随后开启银靶在工件表面形成TiSi2/Ag防菌膜;
(5)镀膜完成:先关闭钛靶和硅靶,再关闭银靶,然后关闭所有气体,加强抽气5-10分钟,除去真空炉内残留的碳离子,将真空炉放空气至大气压,取出工件完成镀膜。
2.根据权利要求1所述一种在塑胶上生产PVD防菌膜的方法,其特征在于:所述步骤(1)中工件清洁为塑胶清洁剂清洁或超声波清洁中的一种,吹干温度不超过60℃。
3.根据权利要求1所述一种在塑胶上生产PVD防菌膜的方法,其特征在于:所述步骤(2)中金属挂架加载偏压-200—-300V。
4.根据权利要求1所述一种在塑胶上生产PVD防菌膜的方法,其特征在于:所述步骤(3)中氩气的流量为100-250sccm,靶电流为10A,电镀时间为2-10分钟。
5.根据权利要求1所述一种在塑胶上生产PVD防菌膜的方法,其特征在于:所述步骤(4)中氩气流量降低至40-80sccm,乙炔气体流量为150-250sccm,乙炔气体通入时间为1-5分钟。
6.根据权利要求1所述一种在塑胶上生产PVD防菌膜的方法,其特征在于:所述步骤(4)中银靶的靶电流为0.5-1A,银靶溅射时间为1-4分钟。
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