CN1076519C - 半导体器件的制造方法 - Google Patents

半导体器件的制造方法 Download PDF

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Publication number
CN1076519C
CN1076519C CN94120036A CN94120036A CN1076519C CN 1076519 C CN1076519 C CN 1076519C CN 94120036 A CN94120036 A CN 94120036A CN 94120036 A CN94120036 A CN 94120036A CN 1076519 C CN1076519 C CN 1076519C
Authority
CN
China
Prior art keywords
gas
sulphur
layer
platinum
top electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN94120036A
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English (en)
Chinese (zh)
Other versions
CN1111817A (zh
Inventor
松元省二
二河秀夫
中川聪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN1111817A publication Critical patent/CN1111817A/zh
Application granted granted Critical
Publication of CN1076519C publication Critical patent/CN1076519C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/014—Capacitor

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  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
CN94120036A 1993-12-28 1994-12-28 半导体器件的制造方法 Expired - Fee Related CN1076519C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP336161/93 1993-12-28
JP336161/1993 1993-12-28
JP33616193 1993-12-28

Publications (2)

Publication Number Publication Date
CN1111817A CN1111817A (zh) 1995-11-15
CN1076519C true CN1076519C (zh) 2001-12-19

Family

ID=18296312

Family Applications (1)

Application Number Title Priority Date Filing Date
CN94120036A Expired - Fee Related CN1076519C (zh) 1993-12-28 1994-12-28 半导体器件的制造方法

Country Status (7)

Country Link
US (2) US5492855A (enExample)
EP (1) EP0661730B1 (enExample)
KR (1) KR0171060B1 (enExample)
CN (1) CN1076519C (enExample)
DE (1) DE69409347T2 (enExample)
SG (2) SG42870A1 (enExample)
TW (1) TW296466B (enExample)

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Publication number Priority date Publication date Assignee Title
EP0574275B1 (en) * 1992-06-12 1998-04-15 Matsushita Electronics Corporation Semiconductor device having capacitor
KR0167889B1 (ko) * 1995-06-09 1999-02-01 김주용 반도체 소자의 비아홀의 형성방법
JP3246274B2 (ja) * 1995-06-22 2002-01-15 松下電器産業株式会社 半導体装置
US6048435A (en) 1996-07-03 2000-04-11 Tegal Corporation Plasma etch reactor and method for emerging films
EP0925605A4 (en) 1996-07-03 2003-11-05 Tegal Corp METHOD AND ARRANGEMENT FOR ETCHING SEMICONDUCTOR DISCS
US6500314B1 (en) 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
US6127277A (en) * 1996-07-03 2000-10-03 Tegal Corporation Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls
KR100224730B1 (ko) * 1996-12-17 1999-10-15 윤종용 반도체장치의 패턴 형성방법 및 이를 이용한 커패시터 제조방법
TW365691B (en) * 1997-02-05 1999-08-01 Samsung Electronics Co Ltd Method for etching Pt film of semiconductor device
EP0865079A3 (en) * 1997-03-13 1999-10-20 Applied Materials, Inc. A method for removing redeposited veils from etched platinum surfaces
DE19712540C1 (de) * 1997-03-25 1998-08-13 Siemens Ag Herstellverfahren für eine Kondensatorelektrode aus einem Platinmetall
US6846424B2 (en) * 1997-11-10 2005-01-25 Advanced Technology Materials, Inc. Plasma-assisted dry etching of noble metal-based materials
US6018065A (en) * 1997-11-10 2000-01-25 Advanced Technology Materials, Inc. Method of fabricating iridium-based materials and structures on substrates, iridium source reagents therefor
JP3974697B2 (ja) * 1997-11-28 2007-09-12 ローム株式会社 キャパシタおよびその製法
US6344413B1 (en) * 1997-12-22 2002-02-05 Motorola Inc. Method for forming a semiconductor device
US6265318B1 (en) 1998-01-13 2001-07-24 Applied Materials, Inc. Iridium etchant methods for anisotropic profile
EP1048064A1 (en) 1998-01-13 2000-11-02 Applied Materials, Inc. Etching methods for anisotropic platinum profile
US6323132B1 (en) 1998-01-13 2001-11-27 Applied Materials, Inc. Etching methods for anisotropic platinum profile
US6919168B2 (en) 1998-01-13 2005-07-19 Applied Materials, Inc. Masking methods and etching sequences for patterning electrodes of high density RAM capacitors
US6541375B1 (en) * 1998-06-30 2003-04-01 Matsushita Electric Industrial Co., Ltd. DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention
US20020123008A1 (en) 2000-12-21 2002-09-05 Ning Xiang J. Isotropic etch to form MIM capacitor top plates
DE10104265B4 (de) * 2001-01-31 2008-09-25 Qimonda Ag Verfahren zum Herstellen einer Halbleiterschaltungsanordnung
US20050109980A1 (en) * 2003-11-25 2005-05-26 Hongyu Wang Polishing composition for CMP having abrasive particles
CN104752154A (zh) * 2013-12-27 2015-07-01 中芯国际集成电路制造(上海)有限公司 电容器的制作方法
CN110491781A (zh) * 2019-07-26 2019-11-22 上海华虹宏力半导体制造有限公司 Mip电容的制造方法
US11688604B2 (en) * 2019-07-26 2023-06-27 Tokyo Electron Limited Method for using ultra thin ruthenium metal hard mask for etching profile control

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5175174A (enExample) * 1974-12-26 1976-06-29 Toray Industries
JPH0234920A (ja) * 1988-07-25 1990-02-05 Sony Corp エッチング方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3923568A (en) * 1974-01-14 1975-12-02 Int Plasma Corp Dry plasma process for etching noble metal
NL9000602A (nl) * 1990-03-16 1991-10-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met geheugenelementen vormende condensatoren met een ferroelectrisch dielectricum.
JPH04257227A (ja) * 1991-02-08 1992-09-11 Sony Corp 配線形成方法
US5384729A (en) * 1991-10-28 1995-01-24 Rohm Co., Ltd. Semiconductor storage device having ferroelectric film
JPH05175174A (ja) * 1991-12-20 1993-07-13 Nec Corp 誘電体膜の反応性ドライエッチング方法
US5381302A (en) * 1993-04-02 1995-01-10 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
US5439840A (en) * 1993-08-02 1995-08-08 Motorola, Inc. Method of forming a nonvolatile random access memory capacitor cell having a metal-oxide dielectric
US5440173A (en) * 1993-09-17 1995-08-08 Radiant Technologies High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5175174A (enExample) * 1974-12-26 1976-06-29 Toray Industries
JPH0234920A (ja) * 1988-07-25 1990-02-05 Sony Corp エッチング方法

Also Published As

Publication number Publication date
US5500386A (en) 1996-03-19
DE69409347T2 (de) 1998-07-23
US5492855A (en) 1996-02-20
TW296466B (enExample) 1997-01-21
EP0661730B1 (en) 1998-04-01
DE69409347D1 (de) 1998-05-07
SG42870A1 (en) 1997-10-17
KR0171060B1 (ko) 1999-03-30
CN1111817A (zh) 1995-11-15
SG63739A1 (en) 1999-03-30
EP0661730A1 (en) 1995-07-05

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Owner name: PANASONIC ELECTRIC EQUIPMENT INDUSTRIAL CO.,LTD.

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Effective date: 20010723

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Applicant before: Matsushita Electronics Corp.

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