TW296466B - - Google Patents

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Publication number
TW296466B
TW296466B TW084101102A TW84101102A TW296466B TW 296466 B TW296466 B TW 296466B TW 084101102 A TW084101102 A TW 084101102A TW 84101102 A TW84101102 A TW 84101102A TW 296466 B TW296466 B TW 296466B
Authority
TW
Taiwan
Prior art keywords
layer
gas
etching
dry etching
electrode
Prior art date
Application number
TW084101102A
Other languages
English (en)
Chinese (zh)
Original Assignee
Matsushita Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electron Co Ltd filed Critical Matsushita Electron Co Ltd
Application granted granted Critical
Publication of TW296466B publication Critical patent/TW296466B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/014—Capacitor

Landscapes

  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
TW084101102A 1993-12-28 1995-02-09 TW296466B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33616193 1993-12-28

Publications (1)

Publication Number Publication Date
TW296466B true TW296466B (enExample) 1997-01-21

Family

ID=18296312

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084101102A TW296466B (enExample) 1993-12-28 1995-02-09

Country Status (7)

Country Link
US (2) US5492855A (enExample)
EP (1) EP0661730B1 (enExample)
KR (1) KR0171060B1 (enExample)
CN (1) CN1076519C (enExample)
DE (1) DE69409347T2 (enExample)
SG (2) SG42870A1 (enExample)
TW (1) TW296466B (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0574275B1 (en) * 1992-06-12 1998-04-15 Matsushita Electronics Corporation Semiconductor device having capacitor
KR0167889B1 (ko) * 1995-06-09 1999-02-01 김주용 반도체 소자의 비아홀의 형성방법
JP3246274B2 (ja) * 1995-06-22 2002-01-15 松下電器産業株式会社 半導体装置
US6048435A (en) 1996-07-03 2000-04-11 Tegal Corporation Plasma etch reactor and method for emerging films
EP0925605A4 (en) 1996-07-03 2003-11-05 Tegal Corp METHOD AND ARRANGEMENT FOR ETCHING SEMICONDUCTOR DISCS
US6500314B1 (en) 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
US6127277A (en) * 1996-07-03 2000-10-03 Tegal Corporation Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls
KR100224730B1 (ko) * 1996-12-17 1999-10-15 윤종용 반도체장치의 패턴 형성방법 및 이를 이용한 커패시터 제조방법
TW365691B (en) * 1997-02-05 1999-08-01 Samsung Electronics Co Ltd Method for etching Pt film of semiconductor device
EP0865079A3 (en) * 1997-03-13 1999-10-20 Applied Materials, Inc. A method for removing redeposited veils from etched platinum surfaces
DE19712540C1 (de) * 1997-03-25 1998-08-13 Siemens Ag Herstellverfahren für eine Kondensatorelektrode aus einem Platinmetall
US6846424B2 (en) * 1997-11-10 2005-01-25 Advanced Technology Materials, Inc. Plasma-assisted dry etching of noble metal-based materials
US6018065A (en) * 1997-11-10 2000-01-25 Advanced Technology Materials, Inc. Method of fabricating iridium-based materials and structures on substrates, iridium source reagents therefor
JP3974697B2 (ja) * 1997-11-28 2007-09-12 ローム株式会社 キャパシタおよびその製法
US6344413B1 (en) * 1997-12-22 2002-02-05 Motorola Inc. Method for forming a semiconductor device
US6265318B1 (en) 1998-01-13 2001-07-24 Applied Materials, Inc. Iridium etchant methods for anisotropic profile
EP1048064A1 (en) 1998-01-13 2000-11-02 Applied Materials, Inc. Etching methods for anisotropic platinum profile
US6323132B1 (en) 1998-01-13 2001-11-27 Applied Materials, Inc. Etching methods for anisotropic platinum profile
US6919168B2 (en) 1998-01-13 2005-07-19 Applied Materials, Inc. Masking methods and etching sequences for patterning electrodes of high density RAM capacitors
US6541375B1 (en) * 1998-06-30 2003-04-01 Matsushita Electric Industrial Co., Ltd. DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention
US20020123008A1 (en) 2000-12-21 2002-09-05 Ning Xiang J. Isotropic etch to form MIM capacitor top plates
DE10104265B4 (de) * 2001-01-31 2008-09-25 Qimonda Ag Verfahren zum Herstellen einer Halbleiterschaltungsanordnung
US20050109980A1 (en) * 2003-11-25 2005-05-26 Hongyu Wang Polishing composition for CMP having abrasive particles
CN104752154A (zh) * 2013-12-27 2015-07-01 中芯国际集成电路制造(上海)有限公司 电容器的制作方法
CN110491781A (zh) * 2019-07-26 2019-11-22 上海华虹宏力半导体制造有限公司 Mip电容的制造方法
US11688604B2 (en) * 2019-07-26 2023-06-27 Tokyo Electron Limited Method for using ultra thin ruthenium metal hard mask for etching profile control

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3923568A (en) * 1974-01-14 1975-12-02 Int Plasma Corp Dry plasma process for etching noble metal
JPS5622981B2 (enExample) * 1974-12-26 1981-05-28
JP2754578B2 (ja) * 1988-07-25 1998-05-20 ソニー株式会社 エッチング方法
NL9000602A (nl) * 1990-03-16 1991-10-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met geheugenelementen vormende condensatoren met een ferroelectrisch dielectricum.
JPH04257227A (ja) * 1991-02-08 1992-09-11 Sony Corp 配線形成方法
US5384729A (en) * 1991-10-28 1995-01-24 Rohm Co., Ltd. Semiconductor storage device having ferroelectric film
JPH05175174A (ja) * 1991-12-20 1993-07-13 Nec Corp 誘電体膜の反応性ドライエッチング方法
US5381302A (en) * 1993-04-02 1995-01-10 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
US5439840A (en) * 1993-08-02 1995-08-08 Motorola, Inc. Method of forming a nonvolatile random access memory capacitor cell having a metal-oxide dielectric
US5440173A (en) * 1993-09-17 1995-08-08 Radiant Technologies High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same

Also Published As

Publication number Publication date
US5500386A (en) 1996-03-19
CN1076519C (zh) 2001-12-19
DE69409347T2 (de) 1998-07-23
US5492855A (en) 1996-02-20
EP0661730B1 (en) 1998-04-01
DE69409347D1 (de) 1998-05-07
SG42870A1 (en) 1997-10-17
KR0171060B1 (ko) 1999-03-30
CN1111817A (zh) 1995-11-15
SG63739A1 (en) 1999-03-30
EP0661730A1 (en) 1995-07-05

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees