CN107619098A - 碳酸氢气水及其在基板表面的应用 - Google Patents

碳酸氢气水及其在基板表面的应用 Download PDF

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CN107619098A
CN107619098A CN201710692205.4A CN201710692205A CN107619098A CN 107619098 A CN107619098 A CN 107619098A CN 201710692205 A CN201710692205 A CN 201710692205A CN 107619098 A CN107619098 A CN 107619098A
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water
bicarbonate
air water
substrate
hydrogen
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李在龙
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Li Maogen
Tianjin Gordon Tektronix Electronics Co Ltd
Mag Technology Co Ltd Korea
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Tianjin Gordon Tektronix Electronics Co Ltd
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Abstract

本发明涉及一种碳酸氢气水，其特征在于：通过氢气水中溶解二氧化碳而成，制备后的碳酸氢气水pH值为4.0～6.8,氧化还原电位为‑50mv～‑650mv,导电率为0.072uS/cm～80uS/cm。本发明通过氢气水中溶解二氧化碳得到既是酸性又有还原力，且导电率的较高碳酸氢气水。此类还原力较高的碳酸氢气水在清洗基板时，能够提高微粒子去除率，且还原力高，能够抑制基板模块上形成的氧化膜，提高清洗效果。

Description

碳酸氢气水及其在基板表面的应用
技术领域
本发明属于富氢水领域，涉及电路板的清洗技术，尤其是一种碳酸氢气水及其在基板表面的应用。
背景技术
一般情况下用于制作半导体晶片，有机EL(OLED)，光掩模，LCD，硬盘等的基板要求更加高容量化和高密度化，为防止微小模块等长期接触，连同微尘都需要清理。此类基板清洗方法很多，大体分为水洗，机械清洗，干洗。
水洗方法将基板等浸泡于药液中，通过化学溶解法去除污染。机械清洗是用冰块，干冰或烟雾器等喷洒基板表面来除去粒子。干洗是通过酸性气体空间中离子体放电或紫外线照射等来去除污染。下列文本1～3中记载了对此类基板清洗说明。
专利文献1，申请号为10-2015-0122061的韩国专利提供了一种铝，焊接等新兴焊接时同样可以提供高品质的清洗液，清洗设备及实装基板的清洗方法。利用清洗液清洗基板。清洗液中含有酮或芳香族类中含有的碳化氢溶剂中富含有机胺，并在此溶剂中添加无数不饱和羧酶酸化合物或无数羧酶酸的药液。有机胺类2级或3级胺磷d中含有thanolamine或trimethylamine至少一种。也就是洗净液中至少含有1种以上脱水的不饱和羧酶酸(甲酸，无数醋酸，无数戊酸等)。胺成分羧酸当量以下。
专利文献2，申请号为10-2016-0049167的韩国专利提供了一种在罩子内部的支撑基板及旋转磁头，在此磁头上放置基板用来喷射第一处理液，第一喷射辅材构件的喷射单元，还包含控制以上喷射单元的控制器，但以上第一喷射构件与此内部第一处理液流向的喷射路线连通，用以上基板安装喷射第一处理液包括第一排出口在内的机身及包括流向喷射路线的提供给第一处理液震动的震动子但要让以上控制器控制上述第一喷射补助构件安装在此基板的第一设定位置在第一时间将上述第一喷嘴辅材构件在此基板上以垂直方向移动至第一设定位置，喷射上述第一处理液后，在第二时间将上述第一喷嘴辅材构件在此基板上再以水平方向移动并喷射上述第一处理液。
专利文献3，韩国专利许(证书号为第1647586号)提供了一种关于在弱酸水溶液下，利用气体-液体混合常压等离子清洗半导体基板,可替代以往清洗工程中使用的强酸或强碱，不仅可以降低成本，还可以避免强酸或强碱清洗带来的废水问题，有助于环保。
另外，根据此类基板的种类与制作方法以及使用材质等，基板表面残留的污染粒子会不同，且与金属粒子难以一并清洗的污染时，会采用硫酸铵或硫酸等化学药品，但，此类化学药品伴随以下问题：
(1)化学药品有去除污染物的效果，但，此类化学药品有可能一瓶去除基板形成的模块或毁损，因此，在使用化学药品后，利用水清洗干净基板上的化学药品；
(2)另外去除化学药品时利用的废水含有毒素，不仅对人体有害，还要格外注意废水处理问题；
(3)还有，使用化学用品使用后，为去除残留在基板上的化学药品，需要大量的水。
为了解决以上的问题，需要不使用化学物品的情况下能够去除不纯物的技术。
本发明考虑到以上几点,在氢气水中溶解二氧化碳，制成即有酸性又有氧化还原力，又能提高导电率的碳酸氢气水，利用于基板清洗，即使碳酸氢气水接触到基板，通过高的还原力抑制基板上形成的氧化膜，提高清洗效果的同时，因不使用化学药品，免去使用化学物品后的护理工程，即安全又能减少清洗程序的利用碳酸氢气水清洗基板表面为其目的所在。
发明内容
本发明的目的在于克服现有技术不足，提供一种碳酸氢气水及其在基板表面的应用。
本发明采用的技术方案是：
一种碳酸氢气水，其特征在于：通过氢气水中溶解二氧化碳而成，制备后的碳酸氢气水pH值为4.0～6.8,氧化还原电位为-50mv～-650mv,导电率为0.072uS/cm～80uS/cm。
而且，所述氢气水是采用纯水制得，制备后的氢气水的pH值为5.5～6.8,氧化还原电位为-200mV～650mV,氢气溶解浓度为0.1ppm～2.0ppm。
而且，所述纯水是溶解纯水或超纯水或电解纯水或超纯水，纯水的溶解导电率为50uS/㎝。
本发明还提供了一种上述碳酸氢气水的基板表面的应用，通过碳酸氢气水对基板表面进行清洗，其清洗步骤是：
⑴将基板按照规定的旋转速度进行旋转清洗，此时，基板的转速为80～300rpm；
⑵利用喷嘴将碳酸氢气水喷洒在旋转的基板表面，向碳酸氢气水种添加1～3兆赫兹的超声波，碳酸氢气水的喷洒持续5～10分钟。
而且，步骤(2)中，利用高频震动器对所述基板进行振动。
本发明优点和积极效果为：
本发明通过氢气水中溶解二氧化碳得到既是酸性又有还原力，且导电率的较高碳酸氢气水。此类还原力较高的碳酸氢气水在清洗基板时，能够提高微粒子去除率，且还原力高，能够抑制基板模块上形成的氧化膜，提高清洗效果。
通过本发明提供的溶解二氧化碳的氢气水清洗基板时，碳酸氢气水中添加超声波，将氢气水均衡传达至基板整体，达到提高微粒子去除作用，其预设为50℃～85℃并使用,提高酸性程度与还原力及导电率来抑制氧化膜形成及微粒子去除，达到一并解决效果。
具体实施方式
下面结合具体实施例对本发明作进一步详述，以下实施例只是描述性的，不是限定性的，不能以此限定本发明的保护范围。
本发明通过利用碳酸氢气水来清洗基板。在此对碳酸氢气水先行说明，后续对该清洗方法进行说明。
另外，下列指标的测定，如pH值和氧化还原电位(ORP)、导电率、二氧化碳浓度分别用以下器具来测定：
(1)pH和氧化还原电位(ORP):东亚电波pH计HM-31P
(2)导电率:东亚电波便携式纯水电导率仪CM-21PW
(3)二氧化碳浓度:空气质量监测仪TSI 7515
(4)氢气浓度:东亚电波DH-35A便携式溶解氢分析仪
本发明中氢气水采用纯水制得，上述纯水的溶解导电率为50uS/㎝，可以是溶解纯水或超纯水或电解纯水或超纯水，制备后的氢气水的pH值为5.5～6.8,氧化还原电位为-200mV～650mV,氢气溶解浓度为0.1ppm～2.0ppm。
本发明中的碳酸氢气水是通过氢气水中溶解二氧化碳而成，制备后的碳酸氢气水pH值为4.0～6.8,氧化还原电位为-50mv～-650mv,导电率为0.072uS/cm～80uS/cm。
本发明溶解二氧化碳得到的氢气水pH为4.0～6.8的强于氢气水的5.5～6.8酸性,特别是酸化还原电位中原有氢气水富有酸化力，根据本发明的碳酸氢气水持有还原力(-50mv～-650mv)清洗基板时防止基板形成酸化膜。
实施例1
下面提供一种本发明中涉及的碳酸氢气水的制备方法
⑴将纯水电解后得到氢气水，该氢气水pH值为6.5，氧化还原电位为-683mv。
⑵将得到的氢气水放进密封容器中，溶解2ppm的二氧化碳，得到碳酸氢气水，该碳酸氢气水的pH为4.6,氧化还原电位为为-470mv,导电率为43.2uS/cm。
实施例2
步骤通实施例1，二氧化碳浓度为1ppm。
对比实施例
将纯水电解后得到氢气水，作为对比，不溶解二氧化碳。
根据二氧化碳浓度的物性变化
下表是通过上记方法得到的氢气水对比二氧化碳浓度pH及氧化还原电位以及导电率变化的比较结果。
CO2浓度 0ppm 0.5ppm 1ppm
pH 6.5 5.2 4.5
ORP(mV) -680 -510 -437
导电率(uS/㎝) 0.25 15 45
通过上表可以看出，随着二氧化碳浓度提高，碳酸氢汽水体现出更高的酸性，虽然氧化还原电位少许降低，仍保持在还原力范围内，导电率急剧上升。
上述碳酸氢气水可应用在基板清洗的工序上，其清洗步骤是：
⑴将基板按照规定的旋转速度进行旋转清洗，此时，基板的旋转速度在80～300rpm；
⑵利用喷嘴将碳酸氢气水喷洒在旋转的基板表面，向碳酸氢气水种添加1～3兆赫兹的超声波，提高其喷射的能量，同时利用高频震动器对基板进行振动，以使喷洒的碳酸氢气水在基板表面更加均匀。碳酸氢气水的喷洒持续5～10分钟。
通过去除基板表面的有机物或微粒子等杂质，提高收益率和品质改善，尤其是不采用化学药品，不需要护理过程，简化工序。另外，通过碳酸氢气水还原力抑制基板表面形成氧化膜，不仅达到清洗效果，更能提高品质。
上述清洗过程中，碳酸氢气水温度预设为50℃～85℃，可保持良好的效果，因为碳酸氢气水在这个范围内氧化还原电位最高，持有最强的还原能力。
下面通过一个操作实例来说明本发明提供的碳酸氢气水对清洗基板的效果。
用Al2O3作为抛光液，对用臭氧水氧化的硅晶片进行抛光式污染，使每个晶片污染5000个污染物，同时将基板按照80rpm旋转，该表面上用常温碳酸氢气水(pH为4.9,ORP为-500mv,电导率为18uS/cm)用喷射方式进行喷射。此时，碳酸氢气水中添加了2兆赫兹的超声波，持续喷射8分钟后，污染物清除率达到80％以上。
尽管本发明的制备方法和制备过程已通过较佳实例进行了例证，相关技术人员可在不脱离本发明内容、精神和范围内对本文所述的方法和技术进行改动或重新组合，来实现最终的制备技术。特别需要指出的是，所有相类似的替换和改动对本领域技术人员来说是显而易见的，他们都被视为包括在本发明精神、范围和内容中。

Claims (5)

1.一种碳酸氢气水，其特征在于：通过氢气水中溶解二氧化碳而成，制备后的碳酸氢气水pH值为4.0～6.8,氧化还原电位为-50mv～-650mv,导电率为0.072uS/cm～80uS/cm。
2.根据权利要求1所述的碳酸氢气水，其特征在于：所述氢气水是采用纯水制得，制备后的氢气水的pH值为5.5～6.8,氧化还原电位为-200mV～650mV,氢气溶解浓度为0.1ppm～2.0ppm。
3.根据权利要求1所述的碳酸氢气水，其特征在于：所述纯水是溶解纯水或超纯水或电解纯水或超纯水，纯水的溶解导电率为50uS/㎝。
4.一种如权利要求1所述的碳酸氢气水的基板表面的应用，其特征在于：通过碳酸氢气水对基板表面进行清洗，其清洗步骤是：
⑴将基板按照规定的旋转速度进行旋转清洗，此时，基板的转速为80～300rpm；
⑵利用喷嘴将碳酸氢气水喷洒在旋转的基板表面，向碳酸氢气水种添加1～3兆赫兹的超声波，碳酸氢气水的喷洒持续5～10分钟。
5.根据权利要求4所述的碳酸氢气水的基板表面的应用，其特征在于：步骤⑵中，利用高频震动器对所述基板进行振动。
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