TWI296131B - Method and apparatus for treating a substrate - Google Patents

Method and apparatus for treating a substrate Download PDF

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Publication number
TWI296131B
TWI296131B TW094130083A TW94130083A TWI296131B TW I296131 B TWI296131 B TW I296131B TW 094130083 A TW094130083 A TW 094130083A TW 94130083 A TW94130083 A TW 94130083A TW I296131 B TWI296131 B TW I296131B
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TW
Taiwan
Prior art keywords
substrate
ice
main surface
treatment liquid
carbon dioxide
Prior art date
Application number
TW094130083A
Other languages
Chinese (zh)
Other versions
TW200616067A (en
Inventor
Yamamoto Satoshi
Original Assignee
Dainippon Screen Mfg
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Publication date
Priority claimed from JP2004264935A external-priority patent/JP2006080417A/en
Priority claimed from JP2004318792A external-priority patent/JP4455280B2/en
Priority claimed from JP2004318791A external-priority patent/JP2006134908A/en
Application filed by Dainippon Screen Mfg filed Critical Dainippon Screen Mfg
Publication of TW200616067A publication Critical patent/TW200616067A/en
Application granted granted Critical
Publication of TWI296131B publication Critical patent/TWI296131B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706Mechanical details, e.g. roller, belt

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

1296131 九、發明說明: 【發明所屬之技術領域】 本發明係關於將半導體晶圓、液晶顯示裝置(LCD)用玻 $基板、電漿顯示器(PDP)用玻璃基板、印刷電路基板、 電子裝置基板等基板朝水平方向搬送,並對基板主面供應 含有冰微粒的處理液,俾執行基板洗淨等處理的基板處理 方法及供只施此方法時所使用的基板處理裝置。 【先前技術】 例如在LCD、PDP等平板顯示器(FPD)的製造裝置之基板 洗淨方面,係執行:利用準分子雷射的UV照射所施行的有 機物污染去除+使用滾筒刷(r〇1 i ing brush)施行洗滌洗 淨,而將1 // m以上的污染物質去除+利用取代洗淨將藥 液洗淨$的殘留藥液去除+利用2流體洗淨施行精密洗淨 +利用最終水洗施行完工洗淨的一連串步驟。此外,近年 有提案取代滾筒刷洗淨,改為如日本專利第號公 ^報所揭示,在液體中分散冰微粒而調製為雪霜狀懸浮液狀 態的冰泥,並將冰泥從㈣撼板表面噴射出,使冰微粒 衝撞基板而將基板洗淨的洗淨方法。 【發明内容】 (發明所欲解決之問題) 習知使用冰泥的洗淨方法係將冰泥從噴嘴朝基板表面 喷射出,使,微粒衝撞基板,俾利用冰微粒摩擦基板表 面’為能提南洗淨效果,便必須將冰泥加壓再從噴嘴使冰 泥依某程度壓力嘴出。但是,將含有可謂為微小冰粒之固 312XP/發明說明書(補件)/94-12/94130083 1296131 JUL 2 0 2007 替換頁 ^ ~ . — 正替換頁 怨物的液體,廣範圍均勻分散於基板表面之事將極為困 難,所以當將冰泥加壓並從喷嘴喷出之際,將隨基板表面 上的位置不同,使冰泥衝撞基板表面時的能量呈現不均勻 狀態。特別係近年的基板大型化,為使冰泥更廣範圍擴散 於基板表面,將必須提高從喷嘴喷出冰泥的喷出壓力,因 而將使從喷嘴喷出冰泥並均勻分散於基板表面上之事更 困難’導致冰泥衝撞基板表面時的能量不均勻更嚴重。結 果’便將出現洗淨不均勻等處理不均的問題。 再者,例如LCD的製造方面,液晶圖案用金屬膜係由如 鋁(Al) +鉬(M〇)等物理性柔軟金屬材料所形成,將因冰微 粒與基板表面間的衝撞能量不均勻狀況,而出現金屬膜將 部分遭受損傷的問題。 本發明係有鑒於如上述實情而所完成的,其目的在於提 供一種將含冰微粒的處理液供應給基板表面,並施行基板 洗淨等處理的情況時,不發生處理不均勻狀況,而可施行 鲁均勻的基板處理,且不致使基板上所形成金屬膜等被覆膜 造成損傷的基板處理方法、及頗適於實施此方法用的基板 處理裝置。 (解決問題之手段) 第1發明係支撐著基板並朝水平方向搬送,且將處理液 供應給基板主面,而對基板施行處理的基板處理方法;其 特徵在於:將含冰微粒的處理液供應給基板主面,並使攪 混構件接觸或靠近基板主面,並在基板主面上攪混含冰微 粒的處理液。1296131 IX. The invention relates to a semiconductor wafer, a liquid crystal display (LCD) glass substrate, a plasma display (PDP) glass substrate, a printed circuit substrate, and an electronic device substrate. The substrate processing method in which the substrate is conveyed in the horizontal direction, the processing liquid containing the ice particles is supplied to the main surface of the substrate, the substrate processing such as the substrate cleaning is performed, and the substrate processing apparatus used when only the method is applied. [Prior Art] For example, in the substrate cleaning of a flat panel display (FPD) manufacturing apparatus such as an LCD or a PDP, it is performed to remove organic matter by using ultraviolet irradiation using a pseudo-molecular laser + using a roller brush (r〇1 i Ing brush) Wash and wash, remove 1 / m or more of contaminant + use the wash solution to remove the residual liquid from the cleaning solution + use 2 fluid cleaning to perform precision cleaning + use the final water wash A series of steps to complete the wash. In addition, in recent years, there has been a proposal to replace the roller brush cleaning, and it has been modified to disperse ice particles in a liquid to prepare ice mud in a snow-like suspension state, and to remove the ice mud from (4) as disclosed in Japanese Patent No. A washing method in which the surface of the plate is ejected and the ice particles collide with the substrate to wash the substrate. SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) Conventionally, the cleaning method using ice mud is to eject the ice mud from the nozzle toward the surface of the substrate, so that the particles collide with the substrate, and the surface of the substrate is rubbed with the ice particles. For the southern washing effect, the ice mud must be pressurized and the ice mud should be pressed out of the nozzle according to a certain degree. However, it will contain a solid 312XP/inventive manual (supplement)/94-12/94130083 1296131 JUL 2 0 2007 Replacement page ^ ~ . — The liquid that is replacing the page grudge, spreads widely over the substrate. The surface is extremely difficult, so when the ice mud is pressurized and ejected from the nozzle, the energy when the ice mud hits the surface of the substrate is uneven depending on the position on the surface of the substrate. In particular, in recent years, the size of the substrate has increased, and in order to spread the ice mud over a wider surface of the substrate, it is necessary to increase the discharge pressure of the ice mud from the nozzle, so that the ice mud is sprayed from the nozzle and uniformly dispersed on the surface of the substrate. It's more difficult' to make the unevenness of energy when the ice mud hits the surface of the substrate. As a result, there will be problems such as uneven handling such as uneven washing. Further, for example, in the manufacture of an LCD, the metal film for a liquid crystal pattern is formed of a physically soft metal material such as aluminum (Al) + molybdenum (M〇), and the collision energy between the ice particles and the surface of the substrate is uneven. And the problem that the metal film will be partially damaged. The present invention has been made in view of the above circumstances, and an object thereof is to provide a case where a treatment liquid containing ice particles is supplied to a surface of a substrate, and a process such as washing the substrate is performed, and no unevenness in processing occurs. A substrate processing method which performs uniform substrate processing without causing damage to a coating film such as a metal film formed on a substrate, and a substrate processing apparatus which is suitable for carrying out the method. (Means for Solving the Problem) The first invention relates to a substrate processing method for supporting a substrate and transporting the processing liquid to the main surface of the substrate, and performing processing on the substrate; characterized in that the processing liquid containing ice particles is used The main surface of the substrate is supplied, and the stirring member is brought into contact with or close to the main surface of the substrate, and the treatment liquid containing ice particles is stirred on the main surface of the substrate.

326\總槍\94\94130083\94130083(替換)-2 1296131326\total gun\94\94130083\94130083 (replacement)-2 1296131

抑修®正汴·;Inhibition® 正汴·;

I ? 一 j JUL 2 0 2007 替換頁 第2發明係如第1發明之基板處理方法,其中,將基板 依傾斜姿勢支撐著,並朝與此傾斜方向正交的方向且朝水 平方向進行拣i送,一邊使對基板主面所供應含冰微粒的處 理液,沿基板傾斜流下,一邊利用上述攪混構件在基板主 面上攪混含冰微粒的處理液。 第3發明係如第1發明之基板處理方法,其中,上述攪 混構件係平面刷,且使此平面刷沿基板主面朝與基板搬送 鲁方向父叉的方向,橫跨基板總寬度而進行往返移動。 第4發明係將處理液供應給基板主面並對基板施行處 理的基板處理方法,其特徵在於:將含有冰微粒(其係含有 - 過氧化氫)的處理液供應給基板主面。 第5發明係如第4發明之基板處理方法,其中,支撐著 基板並朝水平方向搬送,將冰微粒(其係含過氧化氫)的處 理液供應給基板主面,並將此處理液利用攪混構件於基板 •主面上進行擾混。 第6發明係將處理液供應給基板主面,並對基板施行處 理的基板處理方法,其特徵在於:將經溶解二氧化碳而含 有冰微粒的處理液供應給基板主面。 第7發明係如第6發明之基板處理方法,其中,支撐著 .基板並朝水平方向搬送,將經溶解二氧化碳而含有冰微粒 -的處理液供應給基板主面,並將此處理液利用攪混構件於 基板主面上進行攪混。The substrate processing method according to the first aspect of the invention, wherein the substrate is supported in an inclined posture and is picked up in a direction orthogonal to the oblique direction and in a horizontal direction. While the treatment liquid containing the ice particles supplied to the main surface of the substrate is inclined and flows down the substrate, the treatment liquid containing the ice particles is stirred on the main surface of the substrate by the kneading member. According to a third aspect of the invention, in the substrate processing method of the first aspect of the invention, the agitating member is a planar brush, and the planar brush is moved back and forth across the total width of the substrate along the main surface of the substrate toward the substrate in a direction in which the parent direction is transferred to the substrate. mobile. According to a fourth aspect of the invention, a substrate processing method for supplying a processing liquid to a main surface of a substrate and treating the substrate is characterized in that a processing liquid containing ice particles containing hydrogen peroxide is supplied to the main surface of the substrate. According to a fifth aspect of the invention, in the substrate processing method of the fourth aspect of the invention, the substrate is supported and transported in a horizontal direction, and the treatment liquid of ice particles (including hydrogen peroxide) is supplied to the main surface of the substrate, and the treatment liquid is utilized. The mixing member is disturbed on the main surface of the substrate. According to a sixth aspect of the invention, a substrate processing method for supplying a processing liquid to a main surface of a substrate and treating the substrate is characterized in that a processing liquid containing ice particles dissolved in carbon dioxide is supplied to the main surface of the substrate. According to a seventh aspect of the invention, the substrate processing method according to the sixth aspect of the invention, wherein the substrate is supported and transported in a horizontal direction, and the treatment liquid containing ice particles-dissolved by carbon dioxide is supplied to the main surface of the substrate, and the treatment liquid is used for mixing. The member is stirred on the main surface of the substrate.

326\總檔\94\94130083\94130083(替換)-2 JUL 2 Ο 2007 f 替換買 1296131 / ~^— ,· ,_7棚修(楚)正替換頁 丄________ — 第8發明係如第1至7發明中之任一基板處理方法,其 中’基板之處理係洗淨處理。 第9發明之基板處理裝置,係具備有:支撐著基板並朝 t平方向搬送的基板搬送手段;以及對利用此基板搬送手 k所搬达的基板主面,供應處理液的處理液供應手段者; 其特徵為’上述處理液供應手段係將含冰微粒的處理液供 應給基板主面,且更具備有接觸或靠近基板主面,並在基 板主面上將含有冰微粒的處理液施行授混的授混構件。 第10發明係如第9發明之基板處理裝置,其中,上述 基板搬送手段係依傾斜姿勢支標著基板,並將基板朝與此 傾斜方向正乂的方向且水平方向進行搬送,利用上述處理 -液i、應手&對基板主面所供應的含冰微粒處理液,沿 的傾斜流下。 傲 第11發明係如第9發明之基板處理裝置 籲授混構㈣平面刷,將此平面刷配設於在基板搬送方向^ ^上,處理液供應手段所施行的處理液供應位置更靠前 方侧處’且具備有移動手段 U… 動乎奴其係使上述平面刷沿基板主 面朝與基板搬送方向交叉的方 往返移動。 的方向’檢跨基板總寬度而進行 第12發明係如第9發明之基板處理裝置,盆中 處理液供應手段係具備有··喷嘴及 防 ^ 係具有使含冰微粒處理液W K手&,該嘴嘴 液机出的狹縫狀流出口;該製冰/ U6\H;_4\94130083\94130083(替換 1296131 肌2 0 2謝 替換頁 送液手段係調製含冰微粒處理液並送往上述噴嘴。 第13發明係如第12發明之基板處理裝置,其中,上述 製冰/送液手段係具備有:容器、冷卻手段、刮取手段、純 水供應手段及配管;而該容器係具有圓筒狀内周壁面,且 設有供應口與排出〇;該冷卻手段係將此容器壁面冷卻; 該刮取手段係刮取在上述容器的内周壁面上所析出並成 長的冰結晶’並擴散於純水中;該純水供應手段係將純水 着經過供應口供應給上述容器内;該配管係將從上述容器内 經由排出口所排放出的含冰微粒純水’輸送給上述喷嘴。 第14發明係將處理液供應給基板主面,並對基板施行 '處理的基板處理裝置;其特徵在於具備有:基板支撐手段 -及處理液供應手段;該基板支撐手段係支撐著基板;該處 理液供應手段係對由此基板支撐手段所支撐的基板主 面,供應含過氧化氫冰微粒的處理液。 • 第15發明係如第14發明之基板處理裝置,其中,上述 處理液供應手段係具備有處理液調製手段,其係將既定濃 度過氧化氫水進行冷卻,而調製含過氧化氫冰微粒的處理 液0 第16發明係如第15發明之基板處理裝置,其中,上述 處理液調製手段係具備有過氧化氫水調配手段,其係將過 氧化氫與純水依既定比例進行混合,而調配出上述既定濃 度的過氧化氫水。326\总档\94\94130083\94130083 (replacement)-2 JUL 2 Ο 2007 f Replacement buy 1296131 / ~^— ,· , _7 shed repair (Chu) is replacing page 丄________ — The 8th invention is as the first The substrate processing method according to any one of the seventh invention, wherein the processing of the substrate is a cleaning treatment. The substrate processing apparatus according to the ninth aspect of the invention includes the substrate transfer means for supporting the substrate and transporting in the t-flat direction, and the processing liquid supply means for supplying the processing liquid to the main surface of the substrate conveyed by the substrate transfer hand k The method is characterized in that the processing liquid supply means supplies the processing liquid containing ice particles to the main surface of the substrate, and further has a treatment liquid which contacts or is close to the main surface of the substrate, and contains ice particles on the main surface of the substrate. Mixed compounding components. According to a ninth aspect of the invention, in the substrate processing apparatus, the substrate transfer means supports the substrate in an inclined posture, and conveys the substrate in a direction perpendicular to the oblique direction and horizontally. The liquid i, the hand & the ice-containing particle treatment liquid supplied to the main surface of the substrate, flows down obliquely. According to the eleventh invention, the substrate processing apparatus according to the ninth invention calls for a hybrid (four) planar brush, and the planar brush is disposed in the substrate transport direction, and the processing liquid supply position by the processing liquid supply means is further advanced. The side of the square side is provided with a moving means U. The movable plane reciprocates the flat brush along the main surface of the substrate so as to intersect the direction in which the substrate is conveyed. According to a ninth aspect of the invention, the substrate processing apparatus according to the ninth aspect of the invention, wherein the processing liquid supply means in the basin is provided with a nozzle and an anti-system, and the ice-containing particle treatment liquid WK hand & The slit-shaped outlet of the nozzle liquid machine; the ice making / U6\H; _4\94130083\94130083 (replaces 1296131 muscle 2 0 2 thank the page to send liquid means to modulate the ice-containing particle treatment liquid and send it to The substrate processing apparatus according to the twelfth aspect of the invention, wherein the ice-making/liquid-feeding means is provided with: a container, a cooling means, a scraping means, a pure water supply means, and a pipe; and the container has a cylindrical inner peripheral wall surface provided with a supply port and a discharge port; the cooling means cools the wall surface of the container; the scraping means scrapes off the ice crystals deposited and grown on the inner peripheral wall surface of the container The pure water supply means supplies pure water through the supply port to the container; the pipe conveys the pure water containing ice particles discharged from the container through the discharge port to the nozzle. The 14th invention a substrate processing apparatus that supplies a processing liquid to a main surface of the substrate and performs a treatment on the substrate; and is characterized by: a substrate supporting means - and a processing liquid supply means; the substrate supporting means supports the substrate; and the processing liquid supply means A substrate processing apparatus according to a fourteenth aspect of the invention, wherein the processing liquid supply means is provided with a processing liquid, wherein the processing liquid supply means is provided in the main surface of the substrate supported by the substrate supporting means. The liquid preparation device is a substrate treatment apparatus according to a fifteenth aspect of the invention, wherein the treatment liquid preparation means is provided in the substrate treatment apparatus according to the fifteenth aspect of the invention, wherein the treatment liquid containing the hydrogen peroxide particles is cooled. There is a hydrogen peroxide water mixing method in which hydrogen peroxide and pure water are mixed in a predetermined ratio, and the above-mentioned predetermined concentration of hydrogen peroxide water is formulated.

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卜”月7¾修(更)正替換頁 % |° W - 第17發明係如第14發明之基板處理裝置,其中,上述 .基板支撐手段係支撐著基板並朝水平方向搬送的基板搬— -送手段,且更具備有攪混構件,其係利用上述處理液供應- 手段,對經上述基板搬送手段所搬送至的基板主面,供應 含過氧化氫冰微粒的處理液,並在基板主面上攪混含過氧 化氫冰微粒的處理液。 第18發明係對基板主面供應處理液,並對基板施行處 •理的基板處理裝置;其特徵在於具備有:基板支撐手段與 處理液供應手段;該基板支標手段係支擇著基板;該處理 液供應手段係對利用此基板支樓手段所支樓的基板主 面,供應經溶解二氧化碳而含有冰微粒的處理液。 第19發明係如第18發明之基板處理裝置,其中,上述 處理液供應手段係具備有處理液調製手段,其係將在純水 中經溶解二氧化碳的二氧化碳水溶液進行冷卻,而調製經 _溶解二氧化碳而含有冰微粒的處理液。 第20發明係如第19發明之基板處理裝置,其中,上述 處理液调製手段係具備有二氧化碳水溶液調製手段,其係 在純水中溶解二氧化碳而調製二氧化碳水溶液。 第21發明係如第18發明之基板處理裝置,其中,上述 基板支撐手段係支撐著基板並朝水平方向搬送的基板搬 送手段,且更具備有攪混構件,其係利用上述處理液供應 手段,對經上述基板搬送手段所搬送至的基板主面,供應 326_檔\94\94130083\94130083(替換)·2 1296131 月为日修便)正替換頁 JOL 2 0 2007 替換買 ,經溶解二氧化碳而含有冰微粒的處理液,並在基板主面上 '攪混著經溶解二氧化碳而含有冰微粒的處理液。 第22發明係如第8至21發明中之任一基板處理裝置, 其中’基板的處理係洗淨處理。 (發明效果) 第1發明的基板處理方法係將含冰微粒的處理液供應 給基板主面,並利用攪混構件將此含冰微粒的處理液在基 馨板主面進行攪混,藉此例如在洗淨處理時’便可將基板表 面的凹部等之中所存在的齡等污染物質,利用冰微粒刮 出,俾將污染物質與處理液一起從基板主面上流出而去 除。依此的話,因為並非利用冰微粒衝撞基板主面的力道 將污染物質從基板上去除’而是藉由含冰微粒之處理液在 基板主面上進行攪混,而將污染物質從基板上去除,因此 便不需要對含冰微粒的處理液加壓再從喷嘴中喷出的步The substrate processing apparatus according to the fourteenth aspect of the invention, wherein the substrate supporting means supports the substrate and transports the substrate in a horizontal direction. Further, the means for supplying the stirring means further supplies a treatment liquid containing hydrogen peroxide ice particles to the main surface of the substrate to which the substrate transfer means is transported by the processing liquid supply means, and is provided on the main surface of the substrate The treatment liquid containing hydrogen peroxide ice particles is stirred up. The 18th invention is a substrate processing apparatus which supplies a processing liquid to a main surface of a substrate and performs a treatment on the substrate, and is characterized in that: a substrate supporting means and a processing liquid supply means are provided The substrate supporting means supports the substrate; the processing liquid supply means supplies a processing liquid containing ice particles by dissolving carbon dioxide to the main surface of the substrate which is supported by the substrate supporting means. The substrate processing apparatus according to the eighteenth aspect of the invention, wherein the processing liquid supply means is provided with a processing liquid modulating means for dissolving carbon dioxide dissolved in carbon dioxide in pure water The substrate processing apparatus according to the nineteenth aspect of the present invention, wherein the processing liquid preparation means is provided with a carbon dioxide aqueous solution preparation means, which is pure The substrate processing apparatus according to the eighteenth aspect of the invention, wherein the substrate supporting means is a substrate conveying means that supports the substrate and is conveyed in a horizontal direction, and further includes a stirring member. By the processing liquid supply means, the main surface of the substrate to which the substrate transfer means is transported is supplied with 326_file\94\94130083\94130083 (replacement)·2 1296131 month is the daily repair). Replacement page JOL 2 0 2007, a processing liquid containing ice particles dissolved in carbon dioxide is replaced, and a treatment liquid containing ice particles dissolved in carbon dioxide is mixed on the main surface of the substrate. The 22nd invention is any one of the substrates of the 8th to 21st inventions. In the processing apparatus, the processing of the substrate is washed. (Effect of the invention) The substrate processing method according to the first aspect of the invention is to contain ice micro The treatment liquid of the granules is supplied to the main surface of the substrate, and the treatment liquid containing the ice granules is stirred on the main surface of the slab by the mixing member, whereby, for example, during the cleaning treatment, the concave portion of the surface of the substrate can be Contaminants such as ages are scraped off with ice particles, and the pollutants are discharged from the main surface of the substrate together with the treatment liquid. Therefore, the pollutants are not contaminated by the force of the ice particles colliding with the main surface of the substrate. Instead of removing the substrate, the treatment liquid containing ice particles is mixed on the main surface of the substrate to remove the contaminant from the substrate, so that it is not necessary to pressurize the treatment liquid containing the ice particles and eject it from the nozzle. Step

所以,依照第1發明的基板處理方法,便可在不致發生 處理不均勻的情況下執行均勻的基板處理,且亦不致對基 板上所形成的金屬膜等被覆膜造成損傷。 關於第2發明的基板處理方法,因為將基板依傾斜姿勢 支撐並進行搬送,因而對基板主面所供應含冰微粒的處理 液係將沿基板傾斜流下,並利用攪混構件在基板主面上進 行授混,而從基板較低位置側的端緣自然流出。 在第3發明的基板處理方法中,藉由使平面刷沿基板主 326_檔\94\94130083\94130083(替換)·2 11 1296131 JUL 2 Ο 2007 替換頁 #9月為修改)正替換頁 ,面朝與基板搬送方向交又的方向,橫跨基板總寬度進行往 .返移動,便可將供應給基板主面的含冰微粒之處理液,效 率佳的在基板主面上進行擾混。 第4么明的基板處理方法係藉由將含冰微粒的處理液 供應給基板主面,便可在例如洗淨處理時,將基板表面凹 部等之中所存在微粒等污染物質,利用冰微粒而刮出,使 巧染物質與處理液-起從基板主面上流出並去除。在此情 #況下,因為冰微粒係含有過氧化氫,故較軟於僅由純水冷 卻所製得的冰微粒。所以,例如當對含冰微粒的處理液施 行加壓並從喷嘴喷出之際,即便隨基板表面上的位置,而 使冰微粒衝撞基板表面時的能量多少有不均勻狀況發 生’仍可防止例如液晶圖案用金屬膜遭受部分損傷的狀況 考X生此外近年雖由FPD等的製造商所供應玻璃基板等 之中,所含有機物污染程度已有減少趨勢,但是因為對基 鲁板主面所供應處理液的冰微粒中含有過氧化氫,因而藉由 此過氧化氫的氧化作用便可將基板上的有機物分解並去 除。 所以’依照第4發明的基板處理方法,將可不致對基板 上所形成金屬膜等被覆膜造成損傷,且當基板的有機物污 染程度並未如何嚴重等情況時,在基板的一連串洗淨處理 中,將可省略有機物污染的去除步驟。 第6發明的基板處理方法係藉由將含冰微粒的處理液 供應給基板主面,而例如在施行洗淨處理時,基板表面凹 326\|§檔\94\94130083\94130083(替換)-2 12 1296131 JUL 2 Ο 2007 替換寊 月曰修(更)正替換頁 -部等之中所存在的微粒等污染物質立所刮出,並 ' =染物質與處理液一起從基板主面上流出並去除。在此 .^兄下’經溶解二氧化碳而含有冰微粒的處理液係因將在 純水中溶解二氧化碳的二氧化碳水溶液冷卻而所製得,因 而較軟於僅冷卻純水所製得的冰微粒。所以,例如當對含 =微粒的處職施行加壓並從喷対出之際,即便二基板 面上的位置’而使冰微粒衝撞基板表面時的能量多少有 籲不均勻狀況發生,仍可防止例如液晶圖案用金屬膜遭受部 分,傷的狀況發生。此外,因為在含冰微粒的處理液中溶 解者二氧化碳,因而處理液的電阻率値將小於純水。因 b、、、二/合解一氧化奴而含有冰微粒的處理液係當流過配管 内並攸喷嘴進行輸送之時,將較不易發生靜電,俾使當供 應、α基板主面之日守,基板上的微細圖案與裝置將不致有因 靜電而遭破壞的顧慮。 _ 斤Χ依…、第6發明的基板處理方法的話,將不致使基 板上所形成的金屬膜等被覆膜造成損傷,且亦不致因靜電 而使基板上的微細圖案與裝置遭受破壞。 依…、第5與7發明的基板處理方法,例如在施行洗淨處 理時,因為並非利用冰微粒衝撞基板主面的力道才將污染 物質從基板上去除,而是藉由對基板主面所供應含冰微粒 的處理液,在基板主面上利用授混構件進行授混才將污染 物貝從基板上去除’故便不需要對含冰微粒的處理液施行 加壓而從喷嘴中喷出的措施。 326\||檔\94\94130083\94130083(替換)·2 13 1296131 JUL 2 0 2007 替換頁 、所以,在第5與7發明的基板處理方法中,將不致有因 • 含冰微粒的處理液衝撞於基板表面時的能量不均勻,導致 處理不均勻狀況發生的可能性,因而將可施行均勻的基板 處理,且可更確實防止對基板上所形成金屬膜等被覆膜造 成損傷。 弟8么明的基板處理方法係將基板表面凹部等之中所 存在的微粒等污染物質,從基板主面上去除。 • 關於第9發明的基板處理裝置,係利用處理液供應手段 將含冰微粒的處理液供應給基板主面,且攪混構件接觸或 靠近基板主面,並在基板主面上將含冰微粒的處理液進行 攪混,藉此當例如施行洗淨處理時,基板表面凹部等之中 所存在 >(政粒專污染物質將被冰微粒所刮出,使污染物質與 處理液一起從基板主面上流出並去除。依此的話,並非利 用冰微粒衝撞基板主面的力道才將污染物質從基板上去 藝除,而是利用含冰微粒的處理液在基板主面上進行攪混, 將/亏木物貝從基板上去除,因而將無需要利用處理液供應 手段對含微粒子的處理液施行加壓,再喷出於基板主面的 措施。 因此,若使用第9發明的基板處理裝置,便不致發生處 理不均勻,而可執行均勻的基板處理,且亦不致對基板上 所形成金屬膜等被覆膜造成損傷。 第1 〇發明的基板處理裝置係因為利用基板搬送手段將 基板依傾斜姿勢支撐著並進行搬送,因而利用處理液供應 326W^\94\94130083\94130083(#^)-2 14 1296131 JOL 2 Ο 2007 替換頁 月/¾修(更)正替換頁 -手段供應給基板主面的含冰微粒之處理液,便將一邊沪美 '板傾斜的流下,一邊利用攪混構件在基板主面上進行二 混’再從基板較低位置侧端緣自然的流出。 第11發明的基板處理裝置係利用移動手段使平面刷沿 基板主面朝與基板搬送方向交叉的方向,橫跨基板總寬度 進行往返移動’藉以可利用處理液供應手段將供應給基板 主面的含冰微粒之處理液,在基板主面上進行效率佳的攪 關於第12發明的基板處理裝置,係利用製冰/送液手段 調製含冰微粒的處理液並送往喷嘴,而含冰微粒的處理液 特別係在未施行加壓的情況下,便從噴嘴的狹縫狀流出口 流出並供應給基板主面。 第13發明的基板處理裝置係利用冷卻手段將容器壁面 冷卻,並將利用純水供應手段通過供應口供應給容器内的 馨純水之其中.一部分,利用經冷卻的容器壁面進行冷卻而結 冰,再利用刮取手段刮取在容器内周壁面所析出並成長的 冰結晶,且擴散於純水中,便調製得含冰微粒的純水。然 後再將含冰微粒的純水從容器内通過排出口排放出並經 過配管而輸送給喷嘴。 第14發明的基板處理裝置係利用處理液供應手段將含 冰,粒的處理液供應給基板主面,藉以例如當施行洗淨處 理呀在基板表面凹部等之中所存在微粒等污染物質將被 冰微粒刮出,並使污染物質與處理液一起從基板主面上流 326\總檔\94\94130083\94130083(替換)-2 丨(S ) 1296131 JUL 2 Ο 200? 替換寊 月/¾修(爱}正替換頁1 ^並去除。此時利用處理液供應手段供應給基板主面的處 Z液中之冰微粒,因為含有過氧化氫,因而軟於僅將純水· :部所製得的冰微粒。所以,例如當對含冰微粒的處理液* ^仃加壓並從喷嘴喷出之際,即便隨基板表面上的位置不 同,而使冰微粒衝撞基板表面時的能量多少有不均勻狀 仍可防止例如對液晶圖案用金屬膜造成部分損傷的現 此夕^ ’因為對基板主面所供應處理液中的冰微粒含有 過氧化氫’因而將利用此過氧化氫的氧 的有機物產生分解而被去除。 便土扳上 所以 右使用弟14發明的基板處理裝置,將可不致對 ς板^形成金屬膜等被覆膜造成損傷,且當基板的有機 〜μ衫嚴重等情科,在基板的—連串洗淨處理 ,將可省略有機物污染的去除步驟。 在第15發明的基板處理裝置中,係處理液供 ^液調製手段將既定濃度的過氧化氫水冷卻:而“ 3冰微粒(其係含過氧化氫)的處理液。 關於第16發明的基板處理裝置,係處理液㈣手 二化=調配手段,依既定比例將過氧化氯與純: 仃二合,而調配成既定濃度的過氧化氫水。 進 第18發明的基板處理裝置係利用處理 冰微粒的處理液供應給基板主面, 八二又將含 處理時,基板表面凹部等之中所存;^ #施行洗淨 將被冰微粒所刮出,而使污染物等污染物質 〇處理液一起從基板 326\總槍\94\94130083\94130083(替換)-2 JUL 2 0 2007 替換頁 1296131 Π~~^~- 、 <_?月別修(更)正替換頁1Therefore, according to the substrate processing method of the first aspect of the invention, uniform substrate processing can be performed without causing uneven processing, and damage to a coating film such as a metal film formed on the substrate is not caused. In the substrate processing method according to the second aspect of the invention, since the substrate is supported and transported in an inclined posture, the processing liquid for supplying the ice-containing fine particles to the main surface of the substrate is inclined to flow down the substrate, and is performed on the main surface of the substrate by the stirring member. The mixing is carried out while naturally flowing out from the edge of the lower side of the substrate. In the substrate processing method according to the third aspect of the invention, the page is replaced by the flat brush along the substrate main 326_file\94\94130083\94130083 (replacement)·2 11 1296131 JUL 2 Ο 2007 replacement page #9月) The treatment liquid containing ice particles supplied to the main surface of the substrate can be efficiently scrambled on the main surface of the substrate in a direction perpendicular to the substrate transfer direction and moving back and forth across the total width of the substrate. In the substrate processing method of the fourth aspect, by supplying the processing liquid containing the ice particles to the main surface of the substrate, it is possible to use the ice particles in the presence of particles such as fine particles present in the concave portion of the substrate surface during the cleaning process. The scraping is performed to cause the smudge substance and the treatment liquid to flow out and be removed from the main surface of the substrate. In this case, since the ice particles contain hydrogen peroxide, they are softer than ice particles prepared by only cooling with pure water. Therefore, for example, when the treatment liquid containing ice particles is pressurized and ejected from the nozzle, the unevenness of the energy when the ice particles collide against the surface of the substrate even with the position on the surface of the substrate can be prevented. For example, in the case where the metal film for the liquid crystal pattern is partially damaged, the degree of contamination of the organic matter contained in the glass substrate or the like supplied by the manufacturer of FPD or the like has been reduced in recent years, but because of the main surface of the base plate of the Kiru plate The ice particles supplied to the treatment liquid contain hydrogen peroxide, whereby the organic matter on the substrate can be decomposed and removed by the oxidation of hydrogen peroxide. Therefore, according to the substrate processing method of the fourth aspect of the invention, it is possible to prevent the coating film such as the metal film formed on the substrate from being damaged, and when the degree of contamination of the organic substance of the substrate is not so serious, a series of cleaning treatments on the substrate are performed. In the middle, the removal step of organic contamination will be omitted. In the substrate processing method according to the sixth aspect of the invention, the processing liquid containing the ice particles is supplied to the main surface of the substrate, for example, when the cleaning process is performed, the surface of the substrate is concave 326\|§ file\94\94130083\94130083 (replacement)- 2 12 1296131 JUL 2 Ο 2007 Replacement of the 寊月曰修 (more) is replacing the pollutants such as particles present in the page-part, etc., and the material is discharged from the main surface of the substrate together with the treatment liquid. And removed. Here, the treatment liquid containing ice particles dissolved in carbon dioxide is produced by cooling an aqueous solution of carbon dioxide which dissolves carbon dioxide in pure water, and is therefore softer than ice particles obtained by cooling only pure water. Therefore, for example, when pressurizing the work containing the particles and ejecting from the squirt, even if the position of the two substrates is on the surface of the substrate, the energy of the ice particles colliding with the surface of the substrate is somewhat uneven. It is prevented that a metal film for a liquid crystal pattern is partially damaged, and a wound condition occurs. Further, since carbon dioxide is dissolved in the treatment liquid containing ice particles, the resistivity 处理 of the treatment liquid will be smaller than that of pure water. The treatment liquid containing ice particles due to the b,, and the second/combination of the mono-oxidation is less likely to generate static electricity when flowing through the pipe and being conveyed by the nozzle, so that the supply of the main surface of the alpha substrate is Keep in mind that the fine patterns and devices on the substrate will not be damaged by static electricity. In the substrate processing method according to the sixth aspect of the invention, the coating film such as the metal film formed on the substrate is not damaged, and the fine pattern and the device on the substrate are not damaged by static electricity. According to the substrate processing method of the fifth and seventh inventions, for example, when the cleaning process is performed, the pollutants are not removed from the substrate by the force of the ice particles colliding with the main surface of the substrate, but by the main surface of the substrate. Supplying the treatment liquid containing ice particles, and removing the contaminant shell from the substrate by mixing with the compounding member on the main surface of the substrate. Therefore, it is not necessary to pressurize the treatment liquid containing the ice particles to be ejected from the nozzle. Measures. 326\||file\94\94130083\94130083 (replacement)·2 13 1296131 JUL 2 0 2007 Replacement page, therefore, in the substrate processing method of the fifth and seventh inventions, there will be no treatment liquid containing ice particles The energy unevenness when colliding with the surface of the substrate causes a possibility that unevenness in processing occurs, so that uniform substrate processing can be performed, and damage to a coating film such as a metal film formed on the substrate can be more reliably prevented. The substrate processing method of the syllabary is to remove contaminants such as fine particles existing in the concave portion of the substrate surface from the main surface of the substrate. In the substrate processing apparatus according to the ninth aspect of the invention, the processing liquid supply means supplies the processing liquid containing ice particles to the main surface of the substrate, and the mixing member contacts or approaches the main surface of the substrate, and the ice particles are disposed on the main surface of the substrate. The treatment liquid is stirred, whereby, for example, when the cleaning treatment is performed, there is a presence of a concave portion or the like on the surface of the substrate (the chemical-specific pollutant is scraped off by the ice particles, and the pollutant is discharged from the main surface of the substrate together with the treatment liquid. It flows out and removes. According to this, instead of using the particles of ice particles to collide with the main surface of the substrate, the pollutants are removed from the substrate, but the treatment liquid containing ice particles is used to stir the main surface of the substrate. Since the object shell is removed from the substrate, there is no need to pressurize the microparticle-containing treatment liquid by the treatment liquid supply means, and then spray it onto the main surface of the substrate. Therefore, if the substrate processing apparatus of the ninth invention is used, The processing is uneven, and uniform substrate processing can be performed without causing damage to the coating film such as a metal film formed on the substrate. Since the substrate is supported by the substrate transfer means in an inclined posture and transported, the processing liquid supply 326W^\94\94130083\94130083(#^)-2 14 1296131 JOL 2 Ο 2007 replaces the page month/3⁄4 repair ( In addition, the replacement page--the processing liquid supplied to the main surface of the substrate containing the ice particles, the one side of the Shanghai-Mei board is inclined, and the two-mixing is performed on the main surface of the substrate by the stirring member, and then the lower position of the substrate is removed. The substrate processing apparatus according to the eleventh aspect of the present invention uses the moving means to move the flat brush in a direction intersecting the substrate conveying direction in a direction intersecting the substrate conveying direction, and to reciprocate across the total width of the substrate. The processing liquid containing ice particles supplied to the main surface of the substrate is efficiently pulverized on the main surface of the substrate. The substrate processing apparatus according to the twelfth aspect of the invention is prepared by using an ice making/liquid feeding means to prepare a processing liquid containing ice particles. To the nozzle, the treatment liquid containing the ice particles is discharged from the slit-like outlet of the nozzle and supplied to the main surface of the substrate, particularly without applying pressure. The substrate treatment of the thirteenth invention The device cools the wall surface of the container by using a cooling means, and supplies a part of the pure water in the container through the supply port through a pure water supply means, and freezes by cooling the wall surface of the container, and then uses the scraping means. Scrape the ice crystals deposited and grown on the inner peripheral wall of the container, and diffuse it in pure water to prepare pure water containing ice particles. Then, the pure water containing ice particles is discharged from the container through the discharge port. The substrate processing apparatus according to the fourteenth aspect of the present invention supplies the treatment liquid containing ice and particles to the main surface of the substrate by the processing liquid supply means, for example, in the concave portion of the substrate surface, etc., when the cleaning treatment is performed. Contaminants such as particles will be scraped off by the ice particles, and the pollutants will flow from the main surface of the substrate together with the treatment liquid 326\total file\94\94130083\94130083 (replacement)-2 丨(S) 1296131 JUL 2 Ο 200? Replace the month/3⁄4 repair (love} is replacing page 1 ^ and remove. At this time, the ice particles in the Z liquid supplied to the main surface of the substrate by the treatment liquid supply means are softer than the ice particles produced only by the pure water. Therefore, for example, when the treatment liquid containing ice particles is pressurized and ejected from the nozzle, the energy of the ice particles colliding against the surface of the substrate may be uneven even if the position on the surface of the substrate is different. In order to prevent partial damage to the metal film for a liquid crystal pattern, for example, since the ice particles in the processing liquid supplied to the main surface of the substrate contain hydrogen peroxide, the organic matter of oxygen using the hydrogen peroxide is decomposed and decomposed. Remove. Therefore, the substrate processing device invented by the right brother 14 can damage the coating film such as the metal film, and the organic film of the substrate is severely affected by the affair, and the substrate is connected. The string washing treatment will omit the removal step of organic contamination. In the substrate processing apparatus according to the fifteenth aspect of the invention, the treatment liquid supply means adjusts a predetermined concentration of hydrogen peroxide water to cool the "3 ice particles (which are hydrogen peroxide containing) treatment liquid. The substrate processing apparatus is a processing liquid (4), a manual processing method, and a method of mixing chlorine peroxide and pure cesium in a predetermined ratio to prepare hydrogen peroxide water of a predetermined concentration. The treatment liquid for treating the ice particles is supplied to the main surface of the substrate, and is stored in the concave portion of the substrate surface during the treatment, and the cleaning is carried out by the ice particles, so that the pollutants such as pollutants are treated. The liquid is taken from the substrate 326\total gun\94\94130083\94130083 (replacement)-2 JUL 2 0 2007 Replacement page 1296131 Π~~^~- , <_?月别修(more) replacement page 1

_" 1 _ιι 一、·_“^t J 主面上流出並去除。此時,利用處理—液供應手段供應給 基板主面之含冰微粒的處理液,因為係將純水中溶解著 二氧化碳的二氧化碳水溶液施行冷卻而製得因而軟於 僅將純水冷卻而所製得冰微粒。所以,例如當將含冰微 粒的處理液施行加壓而從喷嘴中喷出之際,即便因基板 表面上的位置不同,而使冰微粒衝撞基板表面時的能量 f少有:均勻狀況’仍可防止例如液晶圖案用金屬膜遭 i冗部分損傷。況且,因為在含冰微粒的處理液中有溶解 二氧化碳’因而處理液的電阻率値小於純水。因此,對 基板主面所供應含冰微粒的處理液係當流過配管内並輸 送給喷嘴時將不易發生靜電,且當供應給基板主面時, 基板上的微細圖案與裝置將不致有因靜電而遭受破 顧慮。 所以,若使用帛18發明的基板處理裝置,將可不致對 •基板上所形成金屬料被覆膜造成損傷,JL亦不致因靜電 而使基板上的微細圖案與裝置遭受破壞。 第19發明的基板處理裝置係利用處理液供應手段的處 理液調製手段,將純水中有溶解二氧化碳的二氧化碳水溶 液冷卻’便調製得含有溶解著:氧化碳之冰微粒的處理 广第20發明的基板處理裝置係利用處理液調製手段的二 氧化碳水溶液調製手段,使二氧化碳溶解於純水中,而調 製得二氧化碳水溶液。 S ) 326纖檔 \94\94130083\94130083(替換)-2 17 1296131 *9月7¾修(動正替換頁J| 4°ι07 、關於第17與21發明的基板處理裝置,例如在施行洗淨 • 處理時’因為並非利用冰微粒衝撞基板主面的力道才將污 .染物質從基板上去除,而是藉由對基板主面所供應含冰微 粒的處理液,在基板主面上利用攪混構件進行攪混才將污 染物質從基板上去除,因而便不需要對含冰微粒的處理液 施行加壓再從噴嘴中喷出的措施。 所以,若使用第17與21發明的基板處理裝置,將不致 _有因含冰微粒的處理液衝撞於基板表面時的能量不均 勻’導致處理不均勻狀況發生的可能性,因而將可施行均 勻的基板處理,且可更確實防止對基板上所形成金屬膜等 被覆膜造成損傷。 .第22發明的基板處理裝置係將基板表面凹部等之中所 存在的微粒等污染物質,從基板主面上去除。 【實施方式】 書 以下,針對本發明較佳實施形態參照圖式進行説明。 圖1至圖4所示係本發明實施形態之一例,圖丨所示係 基板處理裝置,在此例中為基板洗淨裝置概略構造的重要 部份立體圖,圖2所示係其前視圖,圖3所示係其側視圖, 圖4所不係此基板洗淨裝置構成要件之一的製冰/送液部 構造之概略剖視圖。 此基板洗淨裝置係具備有··滾筒式輸送機(在圖丨與圖3 中省略圖示)、喷嘴12及平面刷14所構成;該滾筒式輸 送機係由相互平行排列的複數搬送輥1〇所構成,將基板 326·檔 \94\94130083\94130083(替換)-2 18 1296131 :评依傾斜姿勢支撐,並朝其傾斜方向的正交方向且水平方 ;向搬送该基板W;該喷嘴12係朝利用此滚筒式輸送機所 搬送的基板w主面,供應含冰微粒的純水(以下稱「冰 泥」),该平面刷14係在基板w主面上將冰泥進行攪混。 噴V 12的長度係與基板ψ搬送方向正交的寬度方向尺寸 大致相等,且在基板W正上方位置處,配設成與基板搬送 方向父叉且順沿基板W傾斜的狀態。在喷嘴丨2下端面的 長度方向上設有狹缝狀流出口,並從此狹縫狀流出口使冰 泥在幾乎未加壓的狀態下流出。此喷嘴12將與配管16連 接成與其内部所形成流路相連通狀態,喷嘴丨2便透過此 配管16而與後述製冰/送液部2〇(參照圖4)形成流路連接 狀態。 平面刷14係設置於較喷嘴12設置位置更靠基板搬送方 向前方側且接近喷嘴12的位置處,在其下面平面狀植設 著毛海(mohair)、尼龍等刷毛18。此平面刷14的長度係 _與基板W寬度方向尺寸大致相同,並在基板w正上方位置 處,配置成與基板搬送方向交叉且順沿基板w傾斜的狀 悲。此外,雖省略圖示,平面刷14係由支撐/移動機構支 撐成刷毛18前端接觸或靠近基板w主面的狀態,並利用 支撐/移動機構朝長度方向橫跨基板W總寬度進行往返移 動。 : 調製冰泥並輸送給喷嘴12的製冰/送液部20,係如圖4 :所示,具備有谷器2 2,其係形成雙層壁構造且具有圓筒 狀内周壁面,並設有純水供應口 24與冰泥排出口 26。容 312XP/發明說明書(補件)/94-12/94130083 19 1296131 器22的純水供應口 μ係漣 28(其係流路連接 。純水供應用配管 通且連接於冰泥送液二 1〇. 用配官1 6 (其係流路逵盐认+ 12)。在容器22的内壁與外壁 連接,贺嘴 3〇。防如0係在容器22的雙声::充者防,束液 的溫度,俾將容哭p 9 ♦部至冰點以下 仟村办态22内周壁面冷卻保 度。在容器22内部,於苴鉍, 寻、冰點以下的溫 广轉支軸34上固接著螺旋刀片3 匕 延設於容器22外面的端部連結 ===係 刀片36具有靠近容哭22心$,運則紅轉軸。螺旋 用€、素Μ 内周壁面的外周刀鋒。所以,利 轉支軸34進行旋轉’則螺旋刀片36便呈 現外周刀鋒-邊接近容器2 態。 土由邊進打旋轉的狀 在此製冰/送液部2〇中,若你站 D 24 99 ^ 砘水(、應源通過純水供應 I純水,㈣分純相被容器22内 的二曰I:結冰,在容器22内周壁面上析出並成長 二曰内二Γ旋刀片的外周刀鋒進行刮取。然後,從 :2壁面所刮取的冰結晶將擴散於純水中,便調 二水泥。此時所製得冰泥中的冰微粒係例如 τδ所·^㈣左右的粒徑’配合在欲施行洗淨的基板W表 3 ^圖案線寬與溝寬’藉由容器22内周壁面的冷卻 片36旋轉速度、對容器22内的純水供應流 1寻條件的適當設定,便可調節冰微粒的粒徑。在容器 312XP/發明說明書(補件)/94_〗施〗3〇〇83 20 1296131 ;又仔、進力,並從容器22内通過冰泥排出口 26排放 "上通過配官16送往喷嘴12。所以,依照此製冰/送 將可進行無脈動的靜態式冰泥移送。另外,制 冰/达液部2G幾乎不需要設置空間且可設置於噴嘴12附 近’故可使配管16縮短。 關於具有上述構造的基板洗淨裝置,由製冰,送液部2〇 •所調:得並送往喷嘴12的冰泥,將在無特別加壓的情況 I :喷驚12的狹縫狀流出口流出,並供應給利用滚筒 式輸送機依傾斜姿勢朝水平方向搬送的基板w主面。供應 給基板W主面的冰泥係一邊順沿基板⑼傾斜流下,並利用 朝基板搬送方向的交叉方向進行往返移動的平面刷14, 在:板W主面上進行授混,再從基板w較低位置側端緣自 然流出。此時,冰泥將利用平面刷14在基板你主面上進 行搜混,藉此基板W表面凹部等之中所存在的微粒等污染 #物質、’將被冰泥中的冰微粒所刮出,俾將污染物質與冰泥 及其/谷解水一起從基板W主面上流出並去除。 另外,製冰/送液部20的構造並不僅限於上述實施形熊 中所説明,勤亦可將由製冰部所㈣得冰域存於緩衝 槽内γ再一邊於緩衝槽内將冰泥進行靜態攪拌,一邊利用 果攸緩衝槽内將冰泥送往喷嘴12。 圖1至圖3所示基板洗淨裝置中,亦可構成通過配管 16將含有冰微粒(其係含有過氧化氫)的處理液(以下稱 「含過氧化氫冰泥」)送往喷嘴12 ’並將含過氧化氫冰泥 312XP/發明說明書(補件)/94-12/94130083 21 1296131 用,輸送機所搬送的基板ψ主面。 /送液部4〇取雨代Γ冰^液部2〇,改為將如圖5所示製冰 I 4 0 ’通過配管16、、 部40係具備有容器42,^接於噴嘴12。製冰/送液 狀内周壁面,且机右、丹/高成雙層壁構造並具有圓筒 46。容器42 氧化氫水供應口 44與冰泥排出口 供應口 44係連通且連接 谷/的過乳化虱水 過氧化氫水供應用配= f水供應用配管48,且 此外,在過氧化氫水入於調配槽50内部。 於流路連接於純水供應源的純:供岸曰=:且連接 流路連接於過氧化氫供應槽(未^的供應口、及 6〇供應口。在純水供應管58中,^ =乳化氫供應管 制閥62與流量調整闕以,且在過刀二,置者開關控 分別介插設置著開關控制 曰風“官60令, 剌岡66與流量調整閥68。 在谷器42的内壁與外壁間之空間中填充著 防凍液70係在容器42的雙層壁内愈冷凍 彻二。 間進㈣環,並利用冷康器72冷卻至 以下的溫度,且將容器42内周壁面冷卻保持於凝固^ 下的溫度。在容H 42㈣㈣心位 _ 係延5又於谷4 2外面的端部兔、鱼彡士 席浐77只7fW备目士 ▲ 為連結於馬達78的旋轉軸。 螺叙刀片76係具“近容器42内周壁面的外周刀鋒。所 312XP/發明說明書(補件)/94-12/94130083 22 74 1296131 ^^«>x/itr,t" VI^^:4^# ° 58中所#署 9刀別控制著在純水供應管 :=r純水、與通二 ==:: 行混人,而,氧化虱’在調配槽5〇内依既定比例進 仃此。而調製得既定濃度(例如5%或以下,最好 的過氧化氫水。在調配槽5G内所調配得既 = 化氫水係將利用泵52通過過氧 又之過巩 應一的過氧化氫水供=水 ,由過氧化氫水供應…流入〜=的: :::度過:化氫水,中一部分便將被容器42内周壁 姓曰m: ’在谷“2内周壁面上析出並成長的冰 、,曰曰’便將由螺旋刀片76的外周刀鋒所刮取。缺後 容器42内周壁面所刮取之冰結晶便將擴散料 含過氧化氯冰泥。此時所製得含過氧化氣冰:中 的冰彳政粒將含有過氧化氫。 、r當:由Γ:示製冰/送液部4〇所調製之含過氧化氫冰 曰匕^ Μ 12’並供應給利料筒式輸送機依傾 且水平方向進行搬送的基板W主面時,如上述,基板Η :凹部等之中所存在的微粒等污染物質,將與含過氧化氫 冰泥及其溶解水-起從基板面上流出並错。此外, 因為含過氧化氫冰泥的冰微粒中,含有過氧化氫,因而藉 312Xp/發明說明書(補件)/94-12/94130083 23 1296131 由其過氧化氫的氧化作用,使基板w上的有機物分解並去 I除;過氧化氫冰泥中的冰微粒係因含過氧 “平面刷14 0勺搖擺速度(當取代平面刷14 而改用滾产同刷時,便為旋轉速度),而更加提高利用平面 …斤施行的洗淨性能。另夕卜因為平面刷 = 18經常接觸及過氧化禮k 々刷毛 细菌。在隐二化風水’因而亦可抑制平面刷14產生 在廢液中/含的過氧Γ:所流下的廢液中含有過氧化氣, 廢液放置既定時間而進行蒗 /、邊將 水。 仃J因而可再使用作為普通的 另外’此裝置係如上述之不對、 壓,而從喷嘴12供應給基板w主 ,=泥進行加 化氫冰泥施行加麗再#_ ^ P便對含過氧 含過氧化氨冰泥中的冰於基板W主面,因為 無例如對液晶圖案用全屬膜化虱而較軟,因而將 再者,製冰/送液部40屬=^^^ 中所説明,例如亦可在製冰部中調製貫施形態 粒的冰泥,並將此所調製得冰泥儲存於缓衝=風之冰微 在緩衝槽内將冰泥進行靜態搜拌,一邊广邊 將冰泥朝喷嘴12進行輸送。 逯攸緩衝槽内利用泵 其次’如圖1至圖3所示基板洗淨 由配管16朝詩】2輪送著經溶解二=可構成為經 的處理液(以下稱「碳酸氣體—氧^而含有冰微粒 溶解冰泥供應給利 冰泥」),並將碳酸氣體 輪送機所搬送縣板W主面。 3】2XP/發麵明書(補件)/94-】2/94〗30083 24 !296131 、英換言之,取代製冰/送液部20改為將如圖6所示製冰/ =部8G ’經由配管16流路連接於噴嘴12。製冰/送液 〇具備有容器82,其係形成雙層壁構造並具有 :周壁面’且設有二氧化破水溶液供應口 84與冰泥排出 ,。容器82的排出口 86係連通且連接於冰泥送液用 係=、16(其係流路連接於喷嘴⑵。容器82的供應口84 且連接於二氧化碳水溶液供應用配f 88,而配管 • /將插入於二氧化碳水溶液調製槽90内部。此外, 二:= 介插設置泵92、過渡器94及開關閥96。 庫周;槽密閉構造’此調製槽9。係流路連細^ 二岸通Λ連接於介插著開關閥100的純水供應管 二=在調製槽9°内部中插入碳酸氣體供應 〇2(八係&路連接於碳酸氣體供 酸氣體供應管1〇2前端的吹出口二=:而叙 面附近。在碳酸氣體供應管1 〇2中入、;:\90内底 #制閥1G4與流量調整閥⑽。77 〃 &置者開關控 在谷裔82的内壁與外壁 * ⑽。防;東液m係在容哭82 間中填充著防束液 裝請。間進行循ί 下的溫度,且將容哭82内月辟°。110冷卻至冰點以 的溫度。在容器2==:^^_-下 112,並在㈣支轴m上固接著螺:疋轉3 軸m係延設於容器82外 疋轉支 旋轉袖。螺旋刀片⑴係、具有;"近°=連 罪迎奋為82内周壁面的外 312XP/發明說明書(補件)/94-12/94130083 25 1296131 周刀鋒。所以,利用馬達Π 6使旋轉支軸112進行旋轉, J累方疋刀片Π 4之外周刀鋒一邊靠近容器8 2内周壁面一 邊進行旋轉。 在此製冰/送液部80中,經由純水供應管98將純水供 ,給凋製槽90内,並將純水儲存於調製槽90内。此外, 错由開啟碳酸氣體供應管1〇2中所設置的開關控制閥 =4’經由碳酸氣體供應管1〇2對調製槽9〇内供應碳酸氣 脰三對調製槽90内所供應的碳酸氣體,將從碳酸氣體供 ,官前端的吹出口,喷出於調製槽9〇内的純水中而 發泡,調製得在純水中溶解著二氧化碳的二氧化碳水溶 液。=時,若將調製槽90内的純水冷卻,並在低溫純水 中使碳酸氣體起泡,便可使更多的二氧化碳溶解於純水 中可更加降低二氧化碳水溶液的電阻値。 一在調製槽90内所調製得二氧化碳水溶液,將利用泵92 、、二由配官88供應給容器82的供應口 84。若二氧北碳水 溶液經由供應口 84流入容器82内,此二氧化碳水溶=的 “中邛刀將被谷盗82内周壁面所冷卻而結冰,在容界 82内周壁面所析出並成長的冰結晶將利用螺旋刀片114 的外周刀鋒進行到取。㈣,從容器82内周壁面所到取 得冰結晶將擴散於處理液中,而調製得經溶解二氧化炉 碳酸氣體溶解冰泥。人、 當將由圖6所示製冰/送液部80所調製得碳酸氣體溶解 冰泥輸送給喷嘴12,並供應給利用滾筒式輸送機依傾斜 姿勢且朝水平方向搬送的基板w主面時,便如上述,在基 312XP/發明說明書(補件)/94-12/94130083 26 1296131 板w表面凹部等之中所存在的微粒等污染物質,將與碳酸 氣體溶解冰泥及其融解水一起從基板W主面上流出並去 除。此外,因為碳酸氣體溶解冰泥係將二氧化碳水溶液進 行冷卻而製得,因而碳酸氣體溶解冰泥中的冰微粒較柔 .軟,將可更加提高平面刷14的搖擺速度(當取代平面刷 14改用滾筒刷的情況時便為旋轉速度),而更加提高依平 面刷14所施仃的洗淨性能。此外,目為在碳酸氣體溶解 冰泥中溶解著二氧化碳’因而碳酸氣體溶解冰泥的電阻率 値較小。所以,當碳酸氣體溶解冰泥流過配管16内並輸 送給喷嘴12時將不易發生靜電,當碳酸氣體溶解冰泥供 應…基板W主面時’基板w上的微細圖案與裝置亦無因靜 電而遭受破壞的顧慮。況且,因為碳酸氣體溶解冰泥屬於 低溫’因而:氧化碳可在液中維持著較長久的溶存狀態。 另外’在此裝置中’如上述只要在未對碳酸氣體溶解冰 泥施行加壓的情況下,從噴嘴12供應給基板w主面的話 便可,但是即便對碳酸氣體溶解冰泥施行加壓,再從喷嘴 12喷出於基板w主面’因為碳酸氣體溶解冰泥係將二氧 化碳水溶液冷卻而製得,因而碳酸氣體溶解冰泥中的冰微 拉=柔軟、。所以,將不致有因對基板w主面所喷出碳酸氣 解冰泥中的冰微粒’例如使液晶圖案用金屬膜遭受部 分損傷的顧慮。 制Γ Γ構造的製冰/送液部80係因為只要在調 “曰9"設置供碳酸氣體供應管1〇2 , 因而其製作較為容易,所以目6 m 勿所以具實用性,且製冰/送液部80 312Xp/發明說明書(補件)/94-12/94130083_" 1 _ιι 一,·_ “^t J is discharged and removed on the main surface. At this time, the treatment liquid supplied to the main surface of the substrate by the treatment-liquid supply means is dissolved in the pure water. The aqueous solution of carbon dioxide is cooled and thus softened by cooling only pure water to produce ice particles. Therefore, for example, when the treatment liquid containing ice particles is pressurized and ejected from the nozzle, even due to the surface of the substrate The upper position is different, and the energy f when the ice particles collide against the surface of the substrate is small: the uniform condition can still prevent, for example, the metal film of the liquid crystal pattern from being damaged by the redundant portion. Moreover, since it is dissolved in the treatment liquid containing ice particles. The carbon dioxide' is thus less than the pure water. Therefore, the treatment liquid containing ice particles supplied to the main surface of the substrate is less likely to generate static electricity when flowing through the pipe and being supplied to the nozzle, and is supplied to the main surface of the substrate. At the time, the fine patterns and devices on the substrate will not be damaged by static electricity. Therefore, if the substrate processing device of the invention of 帛18 is used, it will not be formed on the substrate. The metal coating film is damaged, and the JL does not cause damage to the fine pattern and the device on the substrate due to static electricity. The substrate processing apparatus according to the nineteenth aspect of the present invention dissolves the pure water by the treatment liquid preparation means of the treatment liquid supply means. The carbon dioxide aqueous solution of carbon dioxide is cooled, and the oxidized carbon granules containing the oxidized carbon are prepared. The substrate processing apparatus according to the twentieth aspect of the invention is a carbon dioxide aqueous solution preparation means using a treatment liquid preparation means to dissolve carbon dioxide in pure water to prepare An aqueous solution of carbon dioxide is obtained. S) 326 fiber file\94\94130083\94130083 (replacement)-2 17 1296131 *September 73⁄4 repair (moving replacement page J|4°ι07, regarding the substrate processing apparatus of the 17th and 21st inventions, for example When performing the cleaning and treatment, 'because the force of the ice particles against the main surface of the substrate is not used to remove the contaminated material from the substrate, but the processing liquid containing the ice particles supplied to the main surface of the substrate is used in the substrate main The surface is removed by mixing with the mixing member to remove the pollutants from the substrate, so that it is not necessary to pressurize the treatment liquid containing the ice particles. In the nozzle processing apparatus of the 17th and 21st inventions, the unevenness of the processing may occur due to the non-uniform energy when the treatment liquid containing the ice particles collides against the surface of the substrate. Therefore, it is possible to perform a uniform substrate treatment, and it is possible to more reliably prevent damage to a coating film such as a metal film formed on a substrate. The substrate processing apparatus according to the 22nd aspect of the invention is a microparticle present in a concave portion or the like on a substrate surface. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. Fig. 1 to Fig. 4 show an example of an embodiment of the present invention. The substrate processing apparatus is an important part perspective view of the schematic structure of the substrate cleaning apparatus in this example, and FIG. 2 is a front view thereof, and FIG. 3 is a side view thereof, and FIG. 4 is not a substrate cleaning apparatus. A schematic cross-sectional view of the structure of the ice making/liquid supply unit constituting one of the requirements. The substrate cleaning apparatus includes a drum conveyor (not shown in FIG. 3 and FIG. 3), a nozzle 12, and a flat brush 14; the drum conveyor is a plurality of conveying rollers arranged in parallel with each other. 1〇, the substrate 326·file\94\94130083\94130083 (replacement)-2 18 1296131: is supported in an inclined posture, and is horizontally oriented in the oblique direction of the oblique direction; the substrate W is conveyed; The nozzle 12 supplies pure water containing ice particles (hereinafter referred to as "ice mud") to the main surface of the substrate w conveyed by the drum conveyor, and the flat brush 14 is used to mix the ice mud on the main surface of the substrate w. . The length of the jet V 12 is substantially equal to the width direction of the substrate ψ transporting direction, and is disposed at a position directly above the substrate W so as to be inclined with respect to the substrate transfer direction and the substrate W. A slit-shaped outlet is provided in the longitudinal direction of the lower end surface of the nozzle 丨2, and the ice-like sludge flows out from the slit-shaped outlet. The nozzle 12 is connected to the pipe 16 so as to communicate with the flow path formed therein, and the nozzle 2 passes through the pipe 16 to form a flow path connection state with an ice making/liquid supply unit 2 (see Fig. 4) which will be described later. The flat brush 14 is provided at a position closer to the front side of the substrate transfer direction than the nozzle 12, and is located close to the nozzle 12, and bristles 18 such as mohair and nylon are placed in a plane on the lower surface. The length of the flat brush 14 is substantially the same as the dimension of the substrate W in the width direction, and is disposed at a position directly above the substrate w so as to intersect the substrate transport direction and be inclined along the substrate w. Further, although not shown, the flat brush 14 is supported by the supporting/moving mechanism so that the front end of the bristles 18 is in contact with or close to the main surface of the substrate w, and is reciprocally moved across the total width of the substrate W in the longitudinal direction by the supporting/moving mechanism. The ice making/liquid supply unit 20 that modulates the ice mud and transports it to the nozzle 12, as shown in FIG. 4, is provided with a granulator 22 having a double wall structure and having a cylindrical inner peripheral wall surface, and A pure water supply port 24 and an ice sludge discharge port 26 are provided. 312XP/Invention Manual (Supplement)/94-12/94130083 19 1296131 The pure water supply port of the device 22 is a system 涟28 (the system is connected by a flow path. The pure water supply pipe is connected and connected to the ice mud liquid supply 2用. With the official 1 6 (the flow path 逵 salt recognition + 12). The inner wall of the container 22 is connected to the outer wall, and the mouth is 3 〇. The anti-double is in the container 22 double: The temperature of the liquid, 俾 will be able to cry p 9 ♦ to the freezing point below the freezing point of the inner wall of the village. 22 inside the container 22, in the 苴铋, search, the freezing point below the freezing point on the axis 34 The end of the spiral blade 3 匕 extended on the outside of the container 22 is connected === the blade 36 has a close to the crying 22 heart $, and the red shaft is rotated. The spiral uses the peripheral blade of the inner wall of the 、 。. When the fulcrum 34 rotates, the spiral blade 36 will appear as a peripheral blade-edge close to the container 2. The soil is rotated by the edge in the ice making/liquid supply section 2, if you stand D 24 99 ^ 砘水(The source is pure water to supply I pure water, (4) the pure phase is frozen by the second 曰I in the container 22, and precipitates on the inner wall surface of the container 22 and grows into two The outer blade of the squeezing blade is scraped. Then, the ice crystals scraped from the wall of 2 will be diffused in pure water, and the second cement will be adjusted. At this time, the ice particles in the ice mud are, for example, τδ. ^(4) The particle size of the left and right 'fitted to the substrate to be cleaned W Table 3 ^The line width and the groove width' are rotated by the cooling fins 36 on the inner peripheral wall surface of the container 22, and the pure water supply flow in the container 22 The appropriate setting of the conditions can be adjusted to adjust the particle size of the ice particles. In the container 312XP / invention manual (supplement) / 94_〗 〖 3 〇〇 83 20 1296131; again, the force, and through the container 22 through the ice The mud discharge 26 discharge is sent to the nozzle 12 by the official 16th. Therefore, according to the ice making/sending, the static ice-free transfer can be performed without pulsation. In addition, the ice making/liquid portion 2G hardly needs to be set. The space can be installed in the vicinity of the nozzle 12, so that the pipe 16 can be shortened. With respect to the substrate cleaning device having the above-described structure, the ice-feeding portion of the liquid-feeding unit 2 is adjusted and sent to the ice mud of the nozzle 12, In the case of no special pressurization I: the slit-shaped outflow port of the stunned 12 flows out and is supplied to the utilization. The main surface of the substrate w that is conveyed in the horizontal direction by the drum conveyor in the horizontal direction. The ice mud supplied to the main surface of the substrate W is inclined to flow along the substrate (9), and is moved by a plane brush that reciprocates in the direction in which the substrate is conveyed. 14. On the main surface of the board W, the mixing is carried out, and then naturally flows out from the lower end side edge of the substrate w. At this time, the ice mud will be searched and mixed on the main surface of the substrate by the flat brush 14, thereby the substrate W Contaminants such as particles present in the surface recesses and the like are contaminated with ice particles in the ice mud, and the pollutants are discharged from the main surface of the substrate W together with the ice mud and the gluten water. . In addition, the structure of the ice making/liquid supply unit 20 is not limited to that described in the above-described embodiment of the bear, and the ice field of the ice making unit (4) can be stored in the buffer tank γ, and the ice mud can be carried out in the buffer tank. The slurry is sent to the nozzle 12 by static stirring while using the fruit buffer tank. In the substrate cleaning apparatus shown in FIG. 1 to FIG. 3, a treatment liquid containing ice particles containing hydrogen peroxide (hereinafter referred to as "hydrogen peroxide containing ice water") may be sent to the nozzle 12 through the pipe 16. 'With the hydrogen peroxide ice mud 312XP / invention manual (supplement) / 94-12/94130083 21 1296131, the main surface of the substrate conveyed by the conveyor. The liquid supply unit 4 picks up the rain water and the liquid portion 2, and instead, the ice making unit I 4 0 ' is placed in the pipe 16 and the portion 40 is connected to the nozzle 12 as shown in Fig. 5 . The ice-making/liquid-feeding inner peripheral wall surface has a double-wall structure and a cylinder 46. The container 42 hydrogen peroxide water supply port 44 communicates with the ice sludge discharge port supply port 44, and connects the valley/per emulsified hydrophobic water hydrogen peroxide water supply with the distribution f water supply pipe 48, and further, in the hydrogen peroxide water It enters the inside of the mixing tank 50. Pure in the flow path connected to the pure water supply source: supply bank 曰 =: and the connection flow path is connected to the hydrogen peroxide supply tank (not supplied port, and 6 〇 supply port. In the pure water supply pipe 58, ^ = Emulsified hydrogen supply control valve 62 and flow adjustment 阙, and in the second pass, the switch is controlled by the switch to set the switch to control the hurricane "Guan 60 command, 剌 66 66 and flow adjustment valve 68. In the bar 42 The space between the inner wall and the outer wall is filled with the antifreeze solution 70, which is frozen in the double wall of the container 42. The intermediate (four) ring is cooled by the cold box 72 to the following temperature, and the inner circumference of the container 42 is used. Wall cooling is maintained at the temperature of solidification. In the case of H 42 (four) (four) heart position _ extension 5 and the outer end of the valley 4 2, the rabbit, the fish gentleman 浐 77 77 7fW 目 ▲ ▲ for the rotation of the motor 78 The screw blade 76 is "a peripheral blade near the inner peripheral wall of the container 42. 312XP / invention manual (supplement) / 94-12/94130083 22 74 1296131 ^^«>x/itr,t" VI^ ^:4^# ° 58中中#9 knives control the pure water supply pipe: =r pure water, and Tong 2 ==:: line mixed, and yttrium oxide 'in the mixing tank 5 〇 依 既 既 。 。 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制 调制Oxygen is passed through the hydrogen peroxide water supply = water, supplied by hydrogen peroxide water... Inflow ~ =: ::: Too: hydrogen water, part of the inner wall of the container 42 will be 曰m : 'Ice, which is deposited and grown on the inner wall of the valley 2, will be scraped off by the outer blade of the spiral blade 76. The ice crystals scraped from the inner wall surface of the container 42 will diffuse the material. Perchloric acid chlorinated mud. At this time, the sulphuric acid containing ice: the hail granules will contain hydrogen peroxide. In the case of the main surface of the substrate W which is conveyed by the squirrel-shaped conveyor in the horizontal direction, as described above, the substrate Η is a contaminant such as particles present in the recess or the like. It will flow out from the substrate surface with the hydrogen peroxide containing hydrogen peroxide and its dissolved water. In addition, because of the ice micro-containing hydrogen peroxide ice mud The granule contains hydrogen peroxide, and thus the organic matter on the substrate w is decomposed and removed by the oxidation of hydrogen peroxide by the 312Xp/invention specification (supplement)/94-12/94130083 23 1296131; hydrogen peroxide The ice particles in the ice mud are due to the pervaporation "flat brush 140 sway rocking speed (when the flat brush 14 is used instead of the rolling brush, it is the rotation speed), and the washing with the plane... Net performance. In addition, because the flat brush = 18 frequent contact and peroxide k k 々 々 细菌 bacteria. In the cryptophobic feng shui 'thus can also inhibit the flat brush 14 produced in the waste / containing peroxy bismuth: The waste liquid contains peroxidic gas, and the waste liquid is placed for a predetermined period of time to carry out water/side water.仃J can thus be reused as a common other 'this device is not the same as the above, and is supplied from the nozzle 12 to the substrate w main, = mud to add hydrogenated ice mud to perform the Garry again #_ ^ P The ice in the peroxygen peroxide-containing ice mud is on the main surface of the substrate W. Since no liquid crystal pattern is used, for example, it is soft, so that the ice making/liquid supply unit 40 is ^^^^ As described in the above, for example, it is also possible to modulate the ice granules of the morphological particles in the ice making portion, and store the prepared ice mud in the buffer = the ice of the wind, and statically mix the ice mud in the buffer tank. The ice mud is conveyed toward the nozzle 12 while wide side. In the buffer tank, the pump is used in the next step. 'The substrate shown in Fig. 1 to Fig. 3 is washed by the pipe 16 and the poem is sent to the poem. 2 is dissolved. The second processing solution (hereinafter referred to as "carbonic acid gas - oxygen ^) The ice crystals are dissolved in ice mud and supplied to the ice mud.) The carbon dioxide gas transfer machine is transported to the main surface of the county plate W. 3] 2XP / hair face book (supplement) / 94-] 2 / 94〗 30083 24 !296131, in other words, in place of the ice / liquid supply section 20 will be replaced as shown in Figure 6 / = 8G 'The flow path is connected to the nozzle 12 via the pipe 16 . The ice making/supplying liquid 〇 is provided with a container 82 which has a double wall structure and has a peripheral wall surface and is provided with a dioxide aqueous solution supply port 84 and ice sludge discharge. The discharge port 86 of the container 82 is connected to and connected to the ice-slurry liquid supply system=16 (the flow path is connected to the nozzle (2). The supply port 84 of the container 82 is connected to the carbon dioxide aqueous solution supply f 88, and the pipe is provided. / Will be inserted into the inside of the carbon dioxide aqueous solution preparation tank 90. In addition, two: = intervening the pump 92, the transition unit 94, and the on-off valve 96. The reservoir circumference; the groove sealing structure 'this modulation groove 9. The flow path is connected to the fine ^ two banks It is connected to the pure water supply pipe 2 through which the on-off valve 100 is inserted, and the carbon dioxide gas supply port 2 is inserted into the inside of the modulation tank 9 (the octagonal & road is connected to the front end of the carbon dioxide gas supply gas supply pipe 1〇2). Blowing out two =: and near the surface. In the carbon dioxide gas supply pipe 1 〇 2 into,;: \90 insole # valve 1G4 and flow adjustment valve (10). 77 〃 & set the switch control in the Valley 82 The inner wall and the outer wall* (10). The anti-mother; the east liquid m system is filled with the anti-bowling liquid in the room of the crying 82. The temperature in the middle of the process is repeated, and the temperature of the crying is 82. The temperature is cooled to the freezing point. Temperature: in the container 2 ==: ^^_- under 112, and on the (four) support axis m to fix the snail: 疋 turn 3 axis m system extended outside the container 82 Rotating sleeves. Spiral blade (1), with; " near ° = controversy for the outer wall of the inner wall of the 312XP / invention manual (supplement) / 94-12/94130083 25 1296131 week blade. So, using the motor Π 6, the rotation support shaft 112 is rotated, and the outer circumference of the blade Π4 is rotated while being close to the inner peripheral wall surface of the container 8 2. In the ice making/liquid supply portion 80, the pure water supply pipe 98 is pure. The water supply is supplied to the immersion tank 90, and the pure water is stored in the modulating tank 90. Further, the switch is controlled by the opening of the carbon dioxide gas supply pipe 1 〇 2 = 4' via the carbon dioxide gas supply pipe 1 2, the carbon dioxide gas supplied in the three pairs of the modulation tank 90 is supplied to the inside of the modulating tank 9 ,, and is blown from the carbon dioxide gas, the outlet of the front end, and sprayed in the pure water in the modulating tank 9 而 to be foamed. The carbon dioxide aqueous solution in which carbon dioxide is dissolved in pure water is prepared. When the pure water in the brewing tank 90 is cooled and the carbonic acid gas is foamed in the low-temperature pure water, more carbon dioxide can be dissolved in the pure The resistance of the aqueous solution of carbon dioxide can be further reduced in water. The aqueous solution of carbon dioxide prepared in the brewing tank 90 is supplied to the supply port 84 of the vessel 82 by the pumping valve 92 and the second valve 88. If the aqueous solution of the dioxin is poured into the vessel 82 through the supply port 84, the carbon dioxide is dissolved. The "middle knives will be cooled by the inner wall of the Valley Pirate 82 and will freeze. The ice crystals that have been deposited and grown on the inner wall of the containment 82 will be taken by the outer blade of the spiral blade 114. (4) From the container 82 The ice crystals obtained by the inner peripheral wall surface are diffused in the treatment liquid, and are prepared to dissolve the ice mud by dissolving the carbon dioxide gas in the dioxide furnace. When the carbon dioxide gas dissolved ice mud prepared by the ice making/liquid supply unit 80 shown in FIG. 6 is supplied to the nozzle 12 and supplied to the main surface of the substrate w which is conveyed in the horizontal direction by the drum conveyor in the horizontal direction, As described above, in the base 312XP / invention manual (supplement) / 94-12/94130083 26 1296131, the surface of the surface w, such as particles and other pollutants, will be dissolved with the carbon dioxide gas and its melt water It flows out from the main surface of the substrate W and is removed. In addition, since the carbon dioxide dissolved ice mud system is obtained by cooling the carbon dioxide aqueous solution, the ice particles dissolved in the ice mud are softer and softer, and the swing speed of the flat brush 14 can be further improved (when replacing the flat brush 14 In the case of a roller brush, the rotation speed is increased, and the washing performance by the flat brush 14 is further improved. Further, it is intended to dissolve carbon dioxide in the dissolved carbon dioxide of the carbonic acid gas, and thus the resistivity of the carbonic acid-dissolved ice mud is small. Therefore, when the carbonic acid gas dissolves the ice mud flowing through the pipe 16 and is sent to the nozzle 12, static electricity is less likely to occur. When the carbonic acid gas dissolves the ice mud supply ... the main surface of the substrate W, the fine pattern on the substrate w and the device are not static electricity. And suffered from the fear of destruction. Moreover, since the carbonic acid gas dissolves the ice mud to a low temperature, the carbon oxide can maintain a long-lasting dissolved state in the liquid. In addition, as long as the above-mentioned "in this apparatus" is applied to the main surface of the substrate w from the nozzle 12 without applying pressure to the carbonic acid-dissolved ice mud, even if the carbonic acid-dissolved ice mud is pressurized, Further, the nozzle 12 is sprayed out of the main surface of the substrate w. Since the carbon dioxide gas dissolves the ice mud to cool the carbon dioxide aqueous solution, the ice micro-pull in the dissolved carbon dioxide is soft. Therefore, there is no fear that the ice crystal particles in the carbonated deionized sludge are ejected from the main surface of the substrate w, for example, the liquid crystal pattern is partially damaged by the metal film. The ice making/liquid supply unit 80 of the Γ Γ structure is easy to manufacture because it is provided with the carbonation gas supply pipe 1 〇 2, so the purpose is not practical, and the ice is made. / liquid supply unit 80 312Xp / invention manual (supplement) / 94-12 / 94130083

V 1296131 的構造並不僅限於圖6所示。例如亦可在製冰部中調製碳 酸氣體溶解冰泥,再將所調製碳酸氣體溶解冰泥儲存於緩 衝槽内,並一邊在緩衝槽内對碳酸氣體溶解冰泥進行靜態 攪拌,一邊從缓衝槽内利用泵將碳酸氣體溶解冰泥輸送給 噴嘴12。此外,亦可未設置調製槽9〇,而是將碳酸氣體 供應官102直接連通且連接於容器82,並對容器82内供 應碳酸氣體,藉由朝容器82内的純水中喷射出碳酸氣體 而發泡,便可在容器82内調製碳酸氣體溶解冰泥。此時, 因為谷益82内的純水將被冷卻而呈低溫狀態,因而將可 使更多的二氧化碳溶解於純水中。況且,使二氧化碳溶解 $純水中並調製二氧化碳水溶液的手段,並不僅限於上述 貫施形癌中所説明之在純水中使碳酸氣體產生發泡的構 造,亦可例如在流路連接於製冰部的純水供應管中途,介 插设置氣體溶解模組,並使氣體溶解模組連接於碳酸氣體 供應管(其係流路連接於碳酸氣體供應源),俾冑通過氣體 鲁溶解模組内的純水中溶解著二氧化碳。另外,亦可將氣體 溶解模組介插設置於將製冰部與喷嘴12流路連接的配管 16中途,此情況下,因為在容器82 $所調製得低溫冰泥 中將有溶解著二氧化碳,因而可使更多的二氧化碳溶解於 冰泥中。 卜’上述貫施形_中’嘴嘴12係配設成與基板搬送 。父又且順沿基板W傾斜狀態,但是亦可將噴嘴配設 位於傾斜基板的較高位置側端緣部正上方位置處,且Μ 板搬送方向的狀態。此外’在上述實施形態中’―邊^ 312ΧΡ/發明說明書(補件)/94-12/94130083 28 1296131 Γ2=姿主勢支擇且朝水平方向進行搬送,-邊從嗔嘴 二朝基,,主面供應冰泥’並利用平面刷14在基板主The configuration of V 1296131 is not limited to that shown in FIG. 6. For example, the carbon dioxide gas may be dissolved in the ice making portion to dissolve the ice mud, and the dissolved carbon dioxide dissolved in the ice mud may be stored in the buffer tank, and the carbonic acid dissolved ice mud is statically stirred in the buffer tank while buffering. A carbon dioxide gas dissolved sludge is delivered to the nozzle 12 by a pump in the tank. Further, instead of providing the brewing tank 9〇, the carbon dioxide gas supply supplier 102 is directly connected to and connected to the container 82, and carbon dioxide gas is supplied into the container 82 by injecting carbonic acid gas into the pure water in the container 82. By foaming, carbon dioxide gas can be dissolved in the container 82 to dissolve the ice mud. At this time, since the pure water in Guyi 82 will be cooled to a low temperature state, more carbon dioxide will be dissolved in the pure water. Moreover, the means for dissolving carbon dioxide in pure water and preparing an aqueous solution of carbon dioxide is not limited to the structure in which carbonic acid gas is foamed in pure water as described in the above-mentioned conventional cancer, and may be connected to a flow path, for example. In the middle of the pure water supply pipe of the ice part, a gas dissolving module is interposed, and the gas dissolving module is connected to the carbonic acid gas supply pipe (the flow path is connected to the carbonic acid gas supply source), and the gas is dissolved through the gas decomposing module. Carbon dioxide is dissolved in the pure water inside. Further, the gas dissolving module may be interposed in the middle of the pipe 16 connecting the ice making portion and the flow path of the nozzle 12, in which case, since carbon dioxide is dissolved in the low temperature ice mud prepared by the container 82$, Thus more carbon dioxide can be dissolved in the ice mud. The above-mentioned "mouth" nozzle 12 is disposed to be transported to the substrate. The parent is inclined along the substrate W, but the nozzle may be disposed at a position directly above the upper end edge of the inclined substrate and in the state in which the slab is conveyed. In addition, in the above-mentioned embodiment, the "side" 312 ΧΡ / invention manual (supplement) / 94-12 / 94130083 28 1296131 Γ 2 = posture main force is selected and transported in the horizontal direction, - from the mouth to the base, The main surface is supplied with ice mud' and the flat brush 14 is used on the substrate main

面上將冰泥進行攪混,而當基板W 將基板1Π衣水平姿勢支#_轉 二邊 W基板w主面供應冰泥’且利用平面^4將= =:::再將基板W傾斜並施行水洗處理。另外: 泥是亦可取代平面刷14改為使用 y 圖7所不係本發明另一實施形態,基板 (旋轉洗淨器)之重要部份構造的概略前視圖。#置 此基板旋轉式洗淨裝置係具備有將基板 chuck)120〇^#^I12;;^ T轉支軸122支撐成繞鉛直軸旋轉自如狀態 支軸122所連結的馬達(未圖示),繞錯直 f略圖示,但在旋轉夾頭⑽所保持的基板?周圍轉配f 成用以將從基板W上減散於周圍的冰泥捕捉的杯體包圍又 基板w的狀悲。另外,在旋轉夾頭12〇所保持 :,配設著將含過氧化氫冰泥朝基板W表面嘴“噴出二 ° 124。贺出贺嘴124將連接於冰泥送液用配管126,雖 未圖示,配管126係流路連接於製冰/送液部。 部的構造係例如在製冰部中調製含過氧化 ^ ^ 調製得含過氧化氫冰泥儲存於緩衝槽 w將所 將含過氧化氮冰泥進行靜離㈣邊在緩衝槽内 茚心撹拌 邊利用在配管126中 途所介插設置的泵,從緩衝槽内對含過氧化氫冰泥施行加 312XP/發明說明書(補件)/94-12/94130083 29 1296131 壓之後’再輸送給喷出喷嘴124。The ice mud is mixed on the surface, and when the substrate W is used, the substrate 1 is horizontally supported, and the surface of the substrate is supplied with ice mud, and the substrate W is tilted by using the plane ^4 ==::: Washing is carried out. Further, the mud may be replaced with a flat brush 14 instead of y. Fig. 7 is a schematic front view showing an essential part of a substrate (rotary washer) according to another embodiment of the present invention. The substrate rotary cleaning device is provided with a motor (not shown) that supports the substrate chucks 120 〇 # 转 转 转 转 转 转 122 122 122 122 122 122 122 122 ( ( ( ( ( ( ( ( ( ( ( ( Is the winding straight down slightly slightly illustrated, but is the substrate held by the rotating collet (10)? The surrounding transfer f is formed to surround the substrate captured by the ice mud on the substrate W and surround the substrate w. In addition, the rotating chuck 12 is held: the hydrogen peroxide-containing ice mud is disposed to be ejected to the surface of the substrate W by two degrees 124. The hemorrhoids 124 are connected to the ice-water supply pipe 126, although Not shown, the pipe 126 is connected to the ice making/liquid supply unit by a flow path. The structure of the part is, for example, prepared in the ice making unit to prepare a peroxide containing hydrogen peroxide to be stored in the buffer tank w. Nitrogen peroxide-containing ice mud is used for static separation (4). In the buffer tank, the pump is placed in the middle of the pipe 126, and the pump containing hydrogen peroxide is added from the buffer tank to the 312XP/invention manual. ()) /94-12/94130083 29 1296131 After the pressure, it is sent to the discharge nozzle 124.

圖Ϊ所示裝置中,對含過氧化氫冰泥施行加壓,並從喷 出噴嘴124朝由旋轉夾頭120所保持並旋轉的基板w表面 噴出。藉此,在基板W表面凹部等之中所存在的微粒等污 染物質將被冰微粒所刮出,並與含過氧化氫冰泥一起從基 板w表面上流出並去除。此情況下,從喷出噴嘴} 朝基 板W表面所喷出之含過氧化氫冰泥中的冰微粒,因為含^ 過氧化氫,因而較軟於僅將純水冷卻而所製得的冰微粒。 所以,在基板W表面上,即便從喷出喷嘴i 24所噴出之含 過氧化氫冰泥中的冰微粒衝撞基板W表面時的能量多少 有不均勻狀況,仍可防止基板W表面所形成圖案狀金屬膜 等遭受部分損傷。此外,藉由使在朝基板w表面所喷出之 含過氧化虱冰泥的冰徵粒中含有過氧化氫,便可藉由此過 氧化虱的氧化作用將基板w上的有機物分解並去徐。 再者,在圖7所示基板旋轉式洗淨裝置中,亦可為取代 ⑩含過氧化氫冰泥,改成將碳酸氣體溶解冰泥經由配管 輸送給噴出喷嘴124,並朝利用旋轉夾頭120所保持且旋 轉的基板W表面,從喷出喷嘴124喷出碳酸氣體溶解冰泥 的構造。此情況下,如上述,基板W表面凹部等之中所存 在的微粒等污染物質,將與碳酸氣體溶解冰泥一起從基板 W表面上流出並去除。此外,從喷出噴嘴124朝基板W表 面所嘴出的碳酸氣體溶解冰泥,因為係將二氧化碳水溶液 冷卻而製得,因而碳酸氣體溶解冰泥中的冰微粒軟於僅將 純水冷卻而所製造的冰微粒。所以,在基板W表面上,即 30 312XP/發明說明書(補件)/94· 12/94130083 1296131 便從喷出喷嘴 粒,彳齡措其抬 124所喷出的碳酸氣體溶解冰泥中之冰微In the apparatus shown in Fig., the hydrogen peroxide containing ice water is pressurized, and is ejected from the discharge nozzle 124 toward the surface of the substrate w held and rotated by the rotary chuck 120. Thereby, the contaminant such as fine particles existing in the concave portion or the like on the surface of the substrate W is scraped off by the ice particles, and is discharged from the surface of the substrate w together with the hydrous containing hydrogen peroxide. In this case, the ice particles contained in the hydrogen peroxide-containing ice slurry discharged from the ejection nozzle} toward the surface of the substrate W are softer than the ice obtained by cooling only the pure water because of the hydrogen peroxide. particle. Therefore, on the surface of the substrate W, even if the energy of the ice particles contained in the hydrogen peroxide-containing ice sprayed from the discharge nozzle i 24 collides with the surface of the substrate W, the energy is somewhat uneven, and the pattern formed on the surface of the substrate W can be prevented. The metal film or the like is partially damaged. Further, by containing hydrogen peroxide in the ice granule containing the cerium peroxide-containing ice sprayed on the surface of the substrate w, the organic matter on the substrate w can be decomposed and deoxidized by the oxidation of the cerium peroxide. Xu. Further, in the substrate rotary cleaning apparatus shown in FIG. 7, instead of the hydrogen peroxide containing ice, the carbonic acid-dissolved ice mud may be transferred to the discharge nozzle 124 via a pipe, and the rotary chuck may be used. The surface of the substrate W held and rotated by 120 is sprayed with a carbon dioxide gas from the discharge nozzle 124 to dissolve the ice mud. In this case, as described above, contaminants such as fine particles existing in the concave portion of the surface of the substrate W are discharged and removed from the surface of the substrate W together with the dissolved carbon dioxide. Further, the carbonic acid gas discharged from the discharge nozzle 124 toward the surface of the substrate W dissolves the ice mud, and since the carbon dioxide aqueous solution is cooled, the ice particles in the dissolved carbon dioxide are softer than the pure water alone. Made of ice particles. Therefore, on the surface of the substrate W, that is, 30 312XP / invention manual (supplement) / 94 · 12 / 94130083 1296131 from the spray nozzle particles, the age of the gas lifted 124 of the carbon dioxide gas dissolved in the ice mud micro-

内’並輪送給喷出嗤π皆1 94 α^ .The inner ’ is sent to the squirting 嗤 π are all 1 94 α^ .

破壞的狀況。 —f外,上述各實施形態,雖針對基板施行洗淨的處理進 行说月准本發明除洗淨以外的基板處理均可適用。例如 當將圖1至圖3所構造的裝置,使用於基板蝕刻處理裝置 的取代水洗部時,藉由平面刷14將蝕刻液與冰泥進行攪 混,便可促進將高黏度蝕刻液利用純水施行稀釋的處理, 且藉由對基板的冰泥供應而將基板與蝕刻液低溫化,便可 籲快速的使蝕刻反應停止,並可提升利用純水所施行的蝕刻 液取代效率。另外,處理液的種類亦不僅限於純水,亦可 為藥液。 【圖式簡單說明】 圖1為本發明實施形態之一例,基板洗淨裝置之概略構 造的重要部分立體圖。 圖2為圖1所示基板洗淨裝置的重要部份前視圖。 …圖3為圖1所示基板洗淨裝置的重要部份側梘圖。 圖4為圖1所示基板洗淨裝置構成要件之一之製冰/送 312XP/發明說明書(補件)/9^12/94130083 31 1296131 構造的概略剖視圖。 送液部之構造:二U剖I;過“幻處理液用的 液二6f為水,製、”冰微粒(其係有溶解著二一 ^ 衣冰/廷液部之構造例的概略剖視圖。 之重 回)為本發明另一實施形態,基板旋轉式洗淨裝置 ^分構造的概略前視圖。 10 12 14 16 、 126 18 20 、 40 、 80 22 、 42 、 82 ^24 26 、 46 、 86 28 30 、 70 、 108 32 、 72 、 110 34 、 74 、 112 36, 76,1 14 38, 78, 1 16 44 Γ主要元件符號說明】 搬送幸昆 噴嘴 平面刷 配管 刷毛 製冰/送液部 容器 純水供應口 冰泥排出口 純水供應用配管 防凍液 冷凍器(冷卻裳置) > 122旋轉支軸 螺旋刀片 馬達 過氧化氫水供應〇 312ΧΡ/發明說明書(補件)/94-12/94130083 32 1296131 48 過氧化氫水供應用配管 50、90 調配槽 52、92 泵 54、94 過濾器 56 > 96 > 100 開關閥 58、98 純水供應管 60 過氧化氳供應管 62 、 66 、 104 開關控制閥 64 、 68 、 106 流量調整閥 84 二氧化碳水溶液供應口 88 二氧化碳水溶液供應用配管 102 碳酸氣體供應管 120 * 旋轉夾頭 124 喷出喷嘴 W 基板 33 312XP/發明說明書(補件)/94-12/94130083The state of destruction. In addition to the above-described embodiments, the substrate treatment can be applied to the substrate, and the substrate treatment other than the cleaning can be applied. For example, when the apparatus constructed in FIGS. 1 to 3 is used in the water washing portion of the substrate etching processing apparatus, the etching liquid and the ice mud are mixed by the flat brush 14, thereby promoting the use of pure water for the high viscosity etching liquid. By performing the dilution treatment and lowering the substrate and the etching solution by supplying the ice slurry to the substrate, the etching reaction can be quickly stopped, and the etching liquid replacement efficiency by the pure water can be improved. Further, the type of the treatment liquid is not limited to pure water, and may be a chemical liquid. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view of an essential part of a schematic configuration of a substrate cleaning apparatus according to an embodiment of the present invention. Fig. 2 is a front elevational view showing an essential part of the substrate cleaning apparatus shown in Fig. 1. Fig. 3 is a side elevational view of an essential part of the substrate cleaning apparatus shown in Fig. 1. Fig. 4 is a schematic cross-sectional view showing the structure of an ice making/sending 312XP/invention specification (supplement)/9^12/94130083 31 1296131 which is one of the constituent elements of the substrate cleaning apparatus shown in Fig. 1. The structure of the liquid supply unit: a two-U section I; a schematic cross-sectional view of a structure example in which the liquid 2f of the phantom treatment liquid is water, and the ice particles (the structure of which is dissolved in the clothing ice/throttle portion) The present invention is a schematic front view of a structure of a substrate rotary cleaning device according to another embodiment of the present invention. 10 12 14 16 , 126 18 20 , 40 , 80 22 , 42 , 82 ^ 24 26 , 46 , 86 28 30 , 70 , 108 32 , 72 , 110 34 , 74 , 112 36 , 76 , 1 14 38 , 78 , 1 16 44 ΓMain component symbol description】Transfer Xingkun nozzle flat brush pipe brushing ice making/liquid supply container pure water supply port ice mud discharge pure water supply pipe antifreeze chiller (cooling skirt) > 122 rotation Spiral blade motor hydrogen peroxide water supply 〇312ΧΡ/Invention manual (supplement)/94-12/94130083 32 1296131 48 Hydrogen peroxide water supply piping 50, 90 Mixing tank 52, 92 Pump 54, 94 Filter 56 > 96 > 100 On-off valve 58, 98 Pure water supply pipe 60 Perhydric oxide supply pipe 62, 66, 104 Switch control valve 64, 68, 106 Flow regulating valve 84 Carbon dioxide aqueous solution supply port 88 Carbon dioxide aqueous solution supply pipe 102 Carbonic acid Gas supply pipe 120 * Rotating chuck 124 Spraying nozzle W Substrate 33 312XP / Invention manual (supplement) / 94-12/94130083

Claims (1)

1296131 ~ 0CT 1 9 2007 替换本 蜂\叫丨声修_正替換頁 十、申請專利範圍. 一〜 、、,1. 一種基板處理方法,係支撐著基板而朝水平方了搬 运且將處理液供應給基板主面而對基板施行 特徵在於: a ’ /、 觸:ΐ:ίΓ的處理液供應給基板主面,並使授混構件接 ,在基板主面上—邊移動-邊攪混含冰 被粒的處理液。 丨2.如申請專㈣圍第丨項之基板處理方H中,將芙 =依傾斜姿勢支撐著,朝與此傾斜方向正交的方'向且朝ς 二^進^搬送,-邊使對基板主面所供應之含冰微粒的 ^理液沿基板傾斜流下,—邊利用上述攪混構件,在基板 主面上攪混含冰微粒的處理液。 ,3.如申請專利範圍帛j項之基板處理方法,其中,上 件係平面刷’使該平面刷沿基板主面朝與基板搬送 °父叉的方向,横跨基板總寬度而進行往返移動。 、、/.一種基板處理方法’係支撐著基板而朝水平方向搬 '’且將處理液供應給基板主面而對基板施行處理者;其 特徵在於: 將含有含過氧化氫之冰微粒的處理液供應給基板主 面,亚使㈣構件接觸或靠近基板主©,在基板主面上一 邊移動—㈣混含有含過氧化氫之冰微粒的處理液。 5. -種基板處理方法,係支㈣基板而朝水平方向搬 达,且將處理液供應給基板主面而對基板騎 特徵在於: 〃 326\總槍\94\94130083\94130083(替換).3 34 1296131 'Mrr_&quot;ll,lll&quot;,l&quot;&quot;'r&quot;·ΙΒ —r ww„|, 一、 ^日修漫)正替換頁 :經溶解二氧化碳而含有冰微^板 ^使擾混構件接觸或靠近基板主面,於基板主面上一 ,-邊攪拌經溶解二氧化碳而含有冰微粒的處理液。 6. =請專利範圍第…項中任一項之基板處理方 法,其中,基板的處理係洗淨處理。 7. -種基板處理裝置,係具備以下手段者: 基板搬送手段’其係支撐著基板㈣水平方向搬送;以 及 ,理液供應手段,其係對利用該基板搬送手段所搬送的 基板主面,供應處理液;其特徵為, 述處理液供應手段係將含冰微粒的處理液供應給基 面者進步具備有接觸或靠近基板主面,在基板主 邊移動—邊將含有冰微粒的處理液施行擾混的授 、作匕構件。 =申請專利範圍第7項之基板處理裝置,其中,上述 j =达ί段係依傾斜姿勢支撐著基板,將基板朝與此傾 1處°正又的方向且水平方向進行搬送,利用上述處理液 手&amp;對基板主面所供應的含冰微粒處理液,沿基板的 傾斜流下。 &lt; 9· ★申明專利範圍第7項之基板處理裝置,其中,上述 攪此構件係平面刷,將該平面刷配設於在基板搬送方向上 較上述處理液供應手段所施行的處理液供應位置更靠前 方具備有移動手段,其係使上述平面刷沿基板主面 朝與基板搬送方向交叉的方向,橫跨基板總寬度而進行往 326V總檔\94\94130083\94130083(替換)-3 35 1296131 返移動 \ 日修(¾正替換頁 、f卢理:r::專利乾圍第7項之基板處理裝置,盆中,上 述處理液供應手段係具備有·· 八r上 口喷Γ及其係具有使含冰微粒處理液流出的狹縫狀流出 喷=冰/运液手段’其係調製含冰微粒處理液,送往上述 ::·如申請專利範圍第10項之基板處理裝置 述製冰/送液手段係具備有: /、中上 口容器’其係具有圓筒狀之内周壁面,設有供應口與排出 冷卻手段,其係將該容器之壁面冷卻; 异的、#係刮取在上述容器的内周壁面上所析出成 長的冰、、Ό晶,將其擴散於純水中; 供應給上述容 純水供應手段,其係將純水經由供應口, 器内;以及 b 二欠其t將從上述容器内經由排出口所排放出的含冰 Μ粒純水,輸送給上述喷嘴。 12.—種基板處理裝置,係具備以下手段者: 及 基板搬送手段,其係支樓著基板而朝水平方向搬送;以 處理液供應手段,其係對利用該基板搬送手段所搬送的 基板主面,供應處理液;其特徵為, 上述處理液供應手段為將含有含過氧化氫之冰微粒的 326\|患檔\94\94130083\94130083(替換)-3 36 月J日修(憂)正替換頁 1296131 供應給基板主面者,並進—步具備有接觸或靠近基 _ i在基板主面上—邊移動—邊攪混含有含過氧化 虱之冰微粒之處理液的攪混構件。 • 士中’專利範圍第12項之基板處理裝置,其中,上 3理液,應手段係具備有處理液調製手段,其係將既定 二二:過氧化虱水進行冷卻,而調製含有含過氧化氫冰微 拉的處理液。 _ 14.如申請專利範圍第13項之基板處理裝置,其中,上 j處理液調製手段係具備有過氧化氫水調配手段,其係將 t乳化氫與純水依既定比例進行混合,而調配出上述既定 浪度的過氧化氫水。 15·—種基板處理裝置,係具備有以下手段者: 基板搬:¾手段’其係支撐著基板而朝水平方向搬送;以 處理液供應手段,其係對利用該基板搬送手段所搬送的 •基板主面,供應處理液;其特徵為, 上述處理液供應手段係將經溶解二氧化碳而含有冰微 粒的處理液供應給基板主面者,進一步具備有擾混構件, 其係接觸或靠近基板主面,在基板主面上一邊移動一邊攪 混經溶解二氧化碳而含有冰微粒的處理液。 16·如申請專利範圍第15項之基板處理裝置,其中,上 述處理液供應手段係具備有處理液調製 士中經溶解二氧化韻二氧化碳水溶液進行冷卻== 溶解二氧化碳而含有冰微粒的處理液。 326\總檔\94\94130083\94130083(替換)-3 37 1296131 頁 17·如申請專利範圍第16項之基板處理裝置,其中 述處理液調製手段係具備有二氧化碳水溶液調製;,,上 係在純水中溶解二氧化碳而調製二氧化碳水溶液。又其 18.如申請專利範圍第7至17項中任—項之基板處理裝 置,其中,基板的處理係洗淨處理。1296131 ~ 0CT 1 9 2007 Replace this bee \ 丨 修 修 正 替换 替换 替换 替换 替换 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The substrate is supplied to the main surface of the substrate and is characterized by: a ' /, touch: ΐ: Γ Γ processing liquid is supplied to the main surface of the substrate, and the mixing member is connected, and the ice is mixed on the main surface of the substrate The treatment liquid of the granules.丨2. If you apply for the special (4) 丨 之 之 之 之 基板 基板 基板 = = = = = = = = = = = = = = = = 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板The treatment liquid containing ice particles supplied to the main surface of the substrate is inclined to flow along the substrate, and the treatment liquid containing ice particles is mixed on the main surface of the substrate by using the above-mentioned mixing member. 3. The substrate processing method of claim 1, wherein the upper flat brush is configured to reciprocate the planar brush along the main surface of the substrate toward the substrate in the direction of the parent fork and across the total width of the substrate. . And a substrate processing method 'supporting the substrate and moving in the horizontal direction' and supplying the processing liquid to the main surface of the substrate to perform processing on the substrate; characterized in that: ice particles containing hydrogen peroxide are contained The treatment liquid is supplied to the main surface of the substrate, and the sub-fourth member contacts or approaches the substrate main ©, and moves on the main surface of the substrate—(4) a treatment liquid containing ice particles containing hydrogen peroxide. 5. A substrate processing method, which supports the (four) substrate and is moved in a horizontal direction, and supplies the processing liquid to the main surface of the substrate and is characterized by: 〃 326\total gun\94\94130083\94130083 (replacement). 3 34 1296131 'Mrr_&quot;ll,lll&quot;,l&quot;&quot;'r&quot;·ΙΒ—r ww„|, one, ^日修漫) is replacing the page: containing dissolved ice carbon dioxide and containing ice micro-plate ^ to disturb A substrate processing method in which the member is in contact with or close to the main surface of the substrate, and the substrate is treated with a method of dissolving carbon dioxide and containing ice particles on the main surface of the substrate. 7. The substrate processing apparatus includes: a substrate transfer means that supports the substrate (four) in the horizontal direction; and a liquid supply means that uses the substrate transfer means The main surface of the substrate to be transported is supplied with a processing liquid; and the processing liquid supply means is that the processing liquid for supplying the ice particles is supplied to the base surface to be improved to have contact or close to the main surface of the substrate, and to move on the main side of the substrate. Will contain The processing liquid of the microparticles is subjected to a turbulent mixing and arranging member. The substrate processing apparatus of claim 7 wherein the above-mentioned j = ί segment supports the substrate in an inclined posture, and the substrate is tilted toward the substrate °The conveyance is carried out in the direction of the horizontal direction and in the horizontal direction, and the ice-containing fine particle treatment liquid supplied to the main surface of the substrate flows downward along the substrate by the above-mentioned treatment liquid hand & 9 · ★ The substrate of the seventh item of the patent scope In the processing apparatus, the agitating member is a planar brush, and the planar brush is disposed in the substrate transporting direction, and a moving means is provided in front of the processing liquid supply position by the processing liquid supply means, and the moving means is provided. The flat brush is moved along the main surface of the substrate in a direction crossing the substrate transport direction, across the total width of the substrate, to the 326V total file, \94\94130083\94130083 (replacement)-3 35 1296131, back to the mobile, and the repair (3⁄4 positive replacement page) , 鲁理: r:: the substrate processing device of the seventh paragraph of the patent dry circumference, in the basin, the above-mentioned treatment liquid supply means is provided with a top-bottom sneeze and a system for causing the ice-containing particle treatment liquid to flow out The slit-like effluent spray = ice/liquid transport means 'modulates the ice-containing fine particle treatment liquid, and is sent to the above:: · The substrate processing apparatus of claim 10 of the patent application scope describes the ice/liquid supply means provided with: /, The upper middle mouth container has a cylindrical inner peripheral wall surface, and is provided with a supply port and a discharge cooling means for cooling the wall surface of the container; the different, # is scraped on the inner peripheral wall surface of the container Precipitating the growing ice and twin crystals and diffusing them into pure water; supplying the above-mentioned pure water supply means by supplying pure water through the supply port; and b owing it to the container The ice-containing pure water discharged from the discharge port is supplied to the nozzle. 12. A substrate processing apparatus comprising: a substrate transfer means for transporting a substrate in a horizontal direction, and a processing liquid supply means for a substrate main body transported by the substrate transfer means The surface is supplied with a treatment liquid; characterized in that the treatment liquid supply means is 326\|the affected file containing the hydrogen peroxide-containing ice particles\94\94130083\94130083 (replacement)-3 36月日日修(忧) The replacement page 1296131 is supplied to the main surface of the substrate, and is further provided with a mixing member which is in contact with or close to the base _i on the main surface of the substrate while stirring the treatment liquid containing the ice particles containing cerium oxide. • The substrate processing device of the 12th patent scope of the patent, in which the upper 3 lyolysis method is provided with a treatment liquid modulating means, which is to cool the predetermined bismuth: ruthenium peroxide, and the preparation contains Hydrogen oxide ice micro-drawing treatment solution. The substrate processing apparatus according to claim 13, wherein the upper processing liquid preparation means is provided with a hydrogen peroxide water mixing means, which mixes the t-emulsified hydrogen and the pure water according to a predetermined ratio. The above-mentioned predetermined degree of hydrogen peroxide water. A substrate processing apparatus is provided with the following means: substrate transfer: 3⁄4 means 'supporting the substrate and transporting it in a horizontal direction; and processing liquid supply means for transporting by the substrate transfer means a processing liquid is supplied to the main surface of the substrate; wherein the processing liquid supply means supplies the processing liquid containing ice particles dissolved in carbon dioxide to the main surface of the substrate, and further comprises a disturbing member which is in contact with or close to the substrate main On the surface of the substrate, the treatment liquid containing the ice particles dissolved in the dissolved carbon dioxide was stirred while moving. The substrate processing apparatus according to the fifteenth aspect of the invention, wherein the processing liquid supply means is provided with a treatment liquid containing a solution of dissolved carbon dioxide in the treatment liquid to be cooled by the dissolved carbon dioxide aqueous solution == dissolved carbon dioxide and containing ice particles. </ br> </ br> </ br> </ br> The carbon dioxide solution is prepared by dissolving carbon dioxide in pure water. The substrate processing apparatus according to any one of claims 7 to 17, wherein the processing of the substrate is a washing treatment. 326纖檔\94\94130083\94130083(替換)·3 38 1296131 七、 指定代表圖·· (一) 本案指定代表圖為:第(1 )圖。 (二) 本代表圖之元件符號簡單說明: 12 喷嘴 14 平面刷 16 配管 18 刷毛 W 基板 八、 本案若有化學式時,請揭示最能顯示發明特徵的化學式: 無326 fiber file \94\94130083\94130083 (replacement)·3 38 1296131 VII. Designated representative figure (1) The representative representative of the case is: (1). (2) The symbol of the symbol of this representative figure is simple: 12 nozzle 14 flat brush 16 piping 18 bristles W substrate VIII. If there is a chemical formula in this case, please reveal the chemical formula that best shows the characteristics of the invention: 312XP/發明說明書(補件)/94-12/94130083312XP/Invention Manual (supplement)/94-12/94130083
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US8791026B2 (en) 2010-10-01 2014-07-29 Mmtech Co., Ltd. Method and apparatus for treating silicon substrate

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KR102017271B1 (en) * 2017-04-03 2019-09-03 주식회사 케이씨텍 Chemical mechanical polishing apparatus for substrate
TWI739201B (en) * 2019-11-08 2021-09-11 辛耘企業股份有限公司 Wet processing device for substrates and substrates claening method

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JPH0349224A (en) * 1989-07-17 1991-03-04 Mitsubishi Electric Corp Treating method for substrate
JPH0394427A (en) * 1989-09-06 1991-04-19 Taiyo Sanso Co Ltd Cleaning of surface of solid
DE19916345A1 (en) * 1999-04-12 2000-10-26 Steag Electronic Systems Gmbh Method and device for cleaning substrates

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US8791026B2 (en) 2010-10-01 2014-07-29 Mmtech Co., Ltd. Method and apparatus for treating silicon substrate

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