CN107615478A - 半导体模块 - Google Patents

半导体模块 Download PDF

Info

Publication number
CN107615478A
CN107615478A CN201580079879.6A CN201580079879A CN107615478A CN 107615478 A CN107615478 A CN 107615478A CN 201580079879 A CN201580079879 A CN 201580079879A CN 107615478 A CN107615478 A CN 107615478A
Authority
CN
China
Prior art keywords
semiconductor module
mold resin
resin portion
edge
addition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201580079879.6A
Other languages
English (en)
Inventor
吉井大
谷川正明
竹内谦介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN107615478A publication Critical patent/CN107615478A/zh
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49562Geometry of the lead-frame for devices being provided for in H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49575Assemblies of semiconductor devices on lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/538Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/141Analog devices
    • H01L2924/1425Converter
    • H01L2924/14252Voltage converter
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02PCONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
    • H02P27/06Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

在构成为搭载有半导体元件、将多个外部连接端子(302、303、304)从模塑树脂部(301)的边引出的半导体模块(1)中,出于用简单的结构确保将该半导体模块(1)组装至装置时的夹具的保持位置这一目的,构成为在由模塑树脂部(301)的相邻的边构成的角部的相向的至少2处设置保持边部(305、306)。

Description

半导体模块
技术领域
本发明涉及内置有半导体元件的半导体模块。
背景技术
以往,已知内置有多个FET等半导体元件的半导体模块。该半导体模块一般构成为设置有与半导体元件相连接的多个端子,并从半导体模块的主体的侧面引出上述端子。(例如,参照专利文献1)
现有技术文献
专利文献
专利文献1:日本专利第5532955号公报(段落0044、图4、图5)
发明内容
发明所要解决的技术问题
通常,在将上述那样的半导体模块组装至各种装置时,利用夹具夹住半导体模块的主体部分,从而配置在装置内,然而,在专利文献1所示的现有的半导体模块那样的端子结构中,由于存在从主体引出的各端子,因此难以确保保持半导体模块的位置。此外,也已知有对半导体模块的主体部进行吸引并保持的夹具,然而由于半导体模块自身的外形较大、重量也较重,且因吸附背面而有可能附着异物等情况,因此吸引方法也难以顺利实现。
本发明是为了解决上述现有问题而完成的,其提供了一种半导体模块,能以简单的结构确保由夹具进行保持的半导体模块的保持部。
解决技术问题所采用的技术方案
本发明所涉及的半导体模块搭载有半导体元件,多个外部连接端子从模塑树脂部的边被引出,其特征在于,所述半导体模块的模塑树脂部具有多个角部,在这些角部中的相向的至少2处设置有保持边部。
发明效果
根据本发明所涉及的半导体模块,通过在相向的2个角部设置保持边部,从而能避开外部连接端子来保持模塑树脂部,进而能容易地向装置内进行搭载。
此外,关于本发明的目的、特征、效果,可以从以下实施方式中的详细说明及附图的记载来进一步明确。
附图说明
图1是示出内置于本发明实施方式1所涉及的半导体模块的电路的电路图。
图2是示出搭载有本发明实施方式1所涉及的半导体模块的机电一体结构电动机的控制器部分的概要结构的展开图。
图3是示出本发明实施方式1所涉及的半导体模块的外形形状的俯视图。
图4是示出本发明实施方式2所涉及的半导体模块的外形形状的俯视图。
图5是示出本发明实施方式3所涉及的半导体模块的外形形状的俯视图。
具体实施方式
实施方式1.
以下,参照图1对本发明所涉及的实施方式进行说明。
另外,本发明所涉及的半导体模块被用作为与电动机、交流发电机等旋转电机进行组合的功率电路,适用于希望利用机电一体结构使产品的功能构成为小型、紧凑、高效率而使用的功率电子电路,尤其是内置有半导体开关元件的功率电子电路。
图1是示出内置于半导体模块的电路的电路图。图中,半导体模块1具有构成半导体开关元件的2个MOSFET101、以及与MOSFET101相连接的引线框102,并构成为将上述元器件收纳于树脂模塑103来进行保护。
此外,半导体模块1在树脂模塑103内具有线夹引线(clip lead)104、引线键合(wire bond)105等连接构件,并经由上述连接构件与引线框102相连接。此处,引线框102通过树脂模塑外部连接端子106被引出至树脂模塑103的外部。此外,半导体模块1构成为被集成在1个封装中,并构成为作为整体具有切断逆变器电路驱动用电源的开关功能以及切断电池反接时的过电流的开关功能。
此外,用于进行各MOSFET101的控制以及电压的监视的信号端子被集中到树脂模塑103的一边107一侧并被引出,与外部的控制电路相连接。并且,端子也从与树脂模塑103的一边107相邻的两侧的边被引出,并在有限的空间内与构成控制单元的其他机构部件相连接。
图2是示出搭载有本发明实施方式1所涉及的半导体模块的机电一体结构电动机的控制器(ECU:Electronic Control Unit,电子控制设备)部分的展开图。另外,此处,示出了逆变器控制单元的结构的一个示例。
此外,该逆变器单元包括用于驱动无刷DC电动机的三相逆变器驱动电路以及电路电源切断用电路,并利用与电动机同轴一体结构从而构成作为紧凑的电源组模块的结构体。
为了实现该同轴一体结构,对于半导体模块1的热损耗,收纳逆变器控制单元的外壳202需要获得作为散热器的功能,因此利用兼具高散热性和上述的机械刚性的铝压铸合金等原材料来制作。
此外,半导体模块1被夹在外壳202与由树脂成形得到的框架组装体203之间,通过将框架组装体203螺钉紧固于外壳202来同时进行固定。此时,为了确保半导体模块1的散热面与由外壳202构成的散热器之间的热传导及电绝缘,从而使散热片材和油脂等介于这两者之间。
此外,框架组装体203中设有用于对半导体模块1提供电源的汇流条205,经由连接器组装体204从外部接收电力。
此外,半导体模块1的信号引脚经由设置于框架组装体203的贯通孔与控制基板206相连接。并且,来自连接器组装体204的信号连接器部的信号引脚也与控制基板206相连接。
图3是示出本发明实施方式1所涉及的半导体模块的外形形状的结构图。
在将半导体模块1搭载在逆变器控制单元等装置内时,需要利用夹具夹住成为半导体模块1的主体部的模塑树脂部301,然而在多个外部连接端子302、303、304从多条边被引出的结构的情况下,无法使夹具与相向的2个面紧贴,从而难以保持半导体模块1。
因此,本发明中,如图3所示,将半导体模块1中的模塑树脂部301形成为四边形,在由四边形的相邻的边形成的角部设置与各个面的角度不同的倾斜的保持边部305,并且,在该保持边部305的相反侧的角部通过一体成形的方式设置与保持边部305平行的保持边部306。
由此,通过在相向的2个角部设置平行的保持边部305、306,从而能避开外部连接端子302、303、304来保持模塑树脂部301,进而能容易地向装置内进行搭载。
此外,通过在角部设置一对保持边部305、306,从而在夹具打滑而无法保持模塑树脂部301的情况下,也能防止夹具与外部连接端子302、303、304发生碰撞。
另外,还有以下优点,即:即使像相向面307、308那样具有相向的边,在除半导体模块1以外的元器件造成妨碍而无法进行保持的情况下,也能通过在角部保持一对保持边部305、306,从而向装置进行搭载变得容易。
实施方式2.
接着,参照图4对本发明的实施方式2进行说明。另外,图中,对与实施方式1同等的部分标注了同一标号。
在上述实施方式1中,构成为将模塑树脂部301的外形形状设为四边形,然而在实施方式2中,如图4所示,是将模塑树脂部301的外形形状设为四边形以上的多边形时的示例。即,构成为在由相邻的边形成的角部设置保持边部305,并在其相向的角部设置与保持边部305平行的保持边部306。另外,在多边形的各边形成为直线以外的情况下也能以同样的方式来构成。
通过上述结构,即使在不以四边形来形成模塑树脂部301的情况下,也能获得与实施方式1同样的效果。
实施方式3.
接着,参照图5对本发明的实施方式3进行说明。
在图5中,基于与实施方式2相同的四边形以上的多边形或在各边包含直线以外的形状的模塑树脂部301,在由相邻边形成的角部设置从各边突出的底座部来形成保持边部305,并且在与该保持边部305相向的部分设置从各边突出的底座部来形成与保持边部305平行的保持边部306。
由此,通过在由模塑树脂部301的相邻的边形成的角部设置平行的保持边部305、306,从而能获得与实施方式1同样的效果。此外,通过在模塑树脂部301设置从各边突出的保持边部305、306,从而在夹具打滑而无法保持模塑树脂部301主体的情况下,也能防止夹具与外部连接端子302、303、304发生碰撞的缺点。
另外,上述说明中,保持边部305、306的平行无需具有数学上的严密性,只要形成为具有保持边部305、306可被保持的程度的平行度即可。此外,保持边部305、306只要至少设置在相向的2处即可,例如设置于四边形的各角部等。并且,根据夹住保持边部的夹具的保持部分的形状的不同,也可以将2个保持边部305、306设为不平行。
另外,本发明在其发明范围内可对实施方式进行适当变形、省略。
标号说明
1:半导体模块,301:模塑树脂部,302、303、304:外部连接端子,305、306:保持边部。

Claims (6)

1.一种半导体模块,搭载有半导体元件,多个外部连接端子从模塑树脂部的边被引出,其特征在于,
所述半导体模块的模塑树脂部具有多个角部,在这些角部中的相向的至少2处设置有保持边部。
2.如权利要求1所述的半导体模块,其特征在于,
所述保持边部与所述模塑树脂部一体成形。
3.如权利要求1或2所述的半导体模块,其特征在于,
所述半导体模块的模塑树脂部形成为四边形或四边形以上的多边形。
4.如权利要求1至3的任一项所述的半导体模块,其特征在于,
至少2处的所述保持边部形成为互相平行或互相不平行。
5.如权利要求1至4的任一项所述的半导体模块,其特征在于,
所述多个外部连接端子仅配置于所述模塑树脂部的边。
6.如权利要求1至5的任一项所述的半导体模块,其特征在于,
所述保持边部通过设为从所述多个外部连接端子被引出的所述模塑树脂部的边突出的底座部来形成。
CN201580079879.6A 2015-05-13 2015-05-13 半导体模块 Withdrawn CN107615478A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2015/063720 WO2016181516A1 (ja) 2015-05-13 2015-05-13 半導体モジュール

Publications (1)

Publication Number Publication Date
CN107615478A true CN107615478A (zh) 2018-01-19

Family

ID=57247901

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580079879.6A Withdrawn CN107615478A (zh) 2015-05-13 2015-05-13 半导体模块

Country Status (5)

Country Link
US (1) US10217683B2 (zh)
EP (1) EP3297020A4 (zh)
JP (1) JPWO2016181516A1 (zh)
CN (1) CN107615478A (zh)
WO (1) WO2016181516A1 (zh)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01276752A (ja) * 1988-04-28 1989-11-07 Matsushita Electric Ind Co Ltd 電子部品
JPH05166973A (ja) * 1991-12-19 1993-07-02 Mitsubishi Electric Corp 半導体素子
JPH067248U (ja) * 1992-06-24 1994-01-28 富士通株式会社 Smdのフラット型パッケージ
JPH07161875A (ja) * 1993-12-09 1995-06-23 Hitachi Ltd 樹脂封止型半導体装置
JPH07283344A (ja) * 1994-04-13 1995-10-27 Shinko Electric Ind Co Ltd 半導体装置
US20110310585A1 (en) * 2010-06-21 2011-12-22 Hitachi Automotive Systems, Ltd. Power Semiconductor Device and Power Conversion Device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU731869B2 (en) * 1998-11-12 2001-04-05 Kaneka Corporation Solar cell module
CN101681907B (zh) * 2007-11-30 2012-11-07 松下电器产业株式会社 散热结构体基板和使用其的模块及散热结构体基板的制造方法
JP5446937B2 (ja) * 2009-06-24 2014-03-19 株式会社デンソー 電子回路内蔵型モータ
US8941001B1 (en) * 2009-11-17 2015-01-27 Aeris Capital Sustainable Ip Ltd. Transparent layer with anti-reflective texture
JP5532955B2 (ja) 2010-01-22 2014-06-25 株式会社デンソー 車両用回転電機
WO2011092871A1 (ja) * 2010-01-29 2011-08-04 株式会社 東芝 Ledパッケージ及びその製造方法
JP5618595B2 (ja) * 2010-04-01 2014-11-05 日立オートモティブシステムズ株式会社 パワーモジュール、およびパワーモジュールを備えた電力変換装置
KR101103674B1 (ko) * 2010-06-01 2012-01-11 엘지이노텍 주식회사 발광 소자
JP5581131B2 (ja) * 2010-06-30 2014-08-27 日立オートモティブシステムズ株式会社 パワーモジュール及びそれを用いた電力変換装置
JP5504219B2 (ja) * 2011-07-27 2014-05-28 日立オートモティブシステムズ株式会社 電力変換装置
JP5855899B2 (ja) * 2011-10-27 2016-02-09 日立オートモティブシステムズ株式会社 Dc−dcコンバータ及び電力変換装置
KR101973395B1 (ko) * 2012-08-09 2019-04-29 엘지이노텍 주식회사 발광 모듈
JP6097557B2 (ja) * 2012-12-26 2017-03-15 日立オートモティブシステムズ株式会社 電力変換装置
KR102011101B1 (ko) * 2012-12-26 2019-08-14 삼성전자주식회사 발광 소자 패키지
KR20150095430A (ko) * 2014-02-13 2015-08-21 삼성전자주식회사 발광다이오드 패키지 및 이를 이용한 발광소자
US9397019B2 (en) * 2014-02-25 2016-07-19 Intel IP Corporation Integrated circuit package configurations to reduce stiffness
JP6383408B2 (ja) * 2014-04-25 2018-08-29 日立オートモティブシステムズ株式会社 コンバータ及び電力変換装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01276752A (ja) * 1988-04-28 1989-11-07 Matsushita Electric Ind Co Ltd 電子部品
JPH05166973A (ja) * 1991-12-19 1993-07-02 Mitsubishi Electric Corp 半導体素子
JPH067248U (ja) * 1992-06-24 1994-01-28 富士通株式会社 Smdのフラット型パッケージ
JPH07161875A (ja) * 1993-12-09 1995-06-23 Hitachi Ltd 樹脂封止型半導体装置
JPH07283344A (ja) * 1994-04-13 1995-10-27 Shinko Electric Ind Co Ltd 半導体装置
US20110310585A1 (en) * 2010-06-21 2011-12-22 Hitachi Automotive Systems, Ltd. Power Semiconductor Device and Power Conversion Device

Also Published As

Publication number Publication date
EP3297020A4 (en) 2018-11-21
US20180053700A1 (en) 2018-02-22
JPWO2016181516A1 (ja) 2017-08-03
US10217683B2 (en) 2019-02-26
EP3297020A1 (en) 2018-03-21
WO2016181516A1 (ja) 2016-11-17

Similar Documents

Publication Publication Date Title
US10106189B2 (en) Motor drive control device for electric power steering
US10177676B2 (en) Power converter
TWI334216B (en) Power semiconductor apparatus
US11244836B2 (en) Semiconductor apparatus, power conversion device, and method for manufacturing semiconductor apparatus
US8811050B2 (en) Inverter device relay-connecting member
US9386698B2 (en) Module, module combined body and module production method
US10818573B2 (en) Power semiconductor module with heat dissipation plate
CN110178304A (zh) 半导体装置
CN107004673A (zh) 半导体模块及半导体驱动装置
JP4538474B2 (ja) インバータ装置
WO2020184053A1 (ja) 半導体装置
US10021802B2 (en) Electronic module assembly having low loop inductance
CN109463033A (zh) 电力转换装置
CA2951293A1 (en) Power converter provided with dual function bus bars
US20170331406A1 (en) Power Conversion Device
CN106165089B (zh) 半导体模块以及搭载有半导体模块的驱动装置
JP6123722B2 (ja) 半導体装置
CN104332453A (zh) 基于塑封式ipm引线框架的双边固定散热结构
CN107615478A (zh) 半导体模块
JP2002238260A (ja) 半導体装置
JP6648000B2 (ja) 回路体および回路体の製造方法
JP6488998B2 (ja) 半導体モジュール及び半導体モジュールの製造方法
JP7171516B2 (ja) パワー半導体モジュール、電力変換装置およびパワー半導体モジュールの製造方法
US20230274994A1 (en) Power electronics module, electrical system having such a module, corresponding manufacturing methods
JP2010284079A (ja) 半導体装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WW01 Invention patent application withdrawn after publication
WW01 Invention patent application withdrawn after publication

Application publication date: 20180119