CN107517044B - Substrate structure of whole-board SMD quartz crystal resonator and processing method thereof - Google Patents
Substrate structure of whole-board SMD quartz crystal resonator and processing method thereof Download PDFInfo
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- CN107517044B CN107517044B CN201710680969.1A CN201710680969A CN107517044B CN 107517044 B CN107517044 B CN 107517044B CN 201710680969 A CN201710680969 A CN 201710680969A CN 107517044 B CN107517044 B CN 107517044B
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- 239000000758 substrate Substances 0.000 title claims abstract description 99
- 239000013078 crystal Substances 0.000 title claims abstract description 48
- 239000010453 quartz Substances 0.000 title claims abstract description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 238000003672 processing method Methods 0.000 title claims description 9
- 239000000919 ceramic Substances 0.000 claims abstract description 148
- 229910052751 metal Inorganic materials 0.000 claims abstract description 82
- 239000002184 metal Substances 0.000 claims abstract description 82
- 238000000576 coating method Methods 0.000 claims abstract description 59
- 239000011248 coating agent Substances 0.000 claims abstract description 55
- 239000011159 matrix material Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000012545 processing Methods 0.000 claims abstract description 12
- 238000004080 punching Methods 0.000 claims abstract description 8
- 238000001465 metallisation Methods 0.000 claims description 22
- 238000007639 printing Methods 0.000 claims description 16
- 238000005520 cutting process Methods 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000009499 grossing Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 206010041662 Splinter Diseases 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- 238000004806 packaging method and process Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
Abstract
The invention relates to a substrate structure of a whole-plate SMD quartz crystal resonator, which comprises a ceramic whole plate, wherein the ceramic whole plate comprises a plurality of quartz crystal bases, the front surface of each quartz crystal base is provided with an annular metallized coating, dispensing platforms A and B and a supporting platform are arranged in the annular metallized coating, the back surface of each quartz crystal base is provided with four electrodes, and a first through hole, a second through hole, a third through hole and a fourth through hole are formed in each base; two layers of ceramic substrates are adopted, through holes are formed in the junction of the adjacent four quartz crystal bases, and a metal coating is arranged on the inner wall of the lower through hole; the front and the back of the ceramic whole plate are provided with split plate lines which are arranged in a matrix and penetrate through the circle center of the through hole; the method for processing the ceramic whole plate comprises the steps of punching, scribing a plate line, metallizing holes and the like, and the single resonator processed by the method has good surface effect and high production efficiency.
Description
Technical Field
The invention relates to a substrate structure of a whole-plate SMD quartz crystal resonator and a processing method thereof, belonging to the technical field of resonator structures.
Background
SMD quartz crystal resonators are commonly used electronic devices, and their use is increasing with the development of digitization technology. However, the SMD quartz crystal resonator has technical difficulties in improving the processing efficiency and the processing quality both in terms of the device structure and the processing technology.
The traditional single resonator processing steps are as follows: 1. finishing the processing of the ceramic whole board according to the production process of the ceramic substrate of the quartz crystal resonator, and then dividing and selecting to form a single SMD quartz crystal resonator ceramic base; 2. the wafer is fixed in the base through cleaning, coating and dispensing to form a single SMD quartz crystal resonator; 3. and processing a single metal sheet (ceramic sheet), and sealing the single metal sheet on the resonant piece to form the single SMD quartz crystal resonator.
9-11, a plurality of quartz crystal bases which are arranged in a matrix are arranged on the ceramic whole plate, the bases are connected, through holes 17 are formed in the positions, connected with the adjacent bases, of the top corners, metal coatings 10 are arranged on the inner walls of the through holes 17, metal rings or annular metallized coatings are arranged on the front surfaces of the bases, dispensing platforms A12 and B13 are arranged on the left sides of the rings, supporting platforms are arranged on the right sides of the rings, four electrodes, namely a first electrode 5, a second electrode 6, a third electrode 7 and a fourth electrode 8, are arranged on the back surfaces of the bases, a second through hole 2 and a fourth through hole 4 are further arranged on the bases, the second electrode 6 and the fourth electrode 8 are respectively connected with the annular metallized coatings in a conducting mode, and the first electrode 5 and the third electrode 7 are respectively connected with the dispensing platforms B13 and A12 in a conducting mode through the metal coatings 10 in the through holes;
if the ceramic whole board produced in the step 1 of the single production process is used in the whole board processing process, after the conductive connection between the adjacent base electrodes is cut off later, as shown by the cutting line 21 in fig. 11, the first electrode and the third electrode cannot be connected with the dispensing platforms B and a in a conductive manner, and thus etching fine adjustment cannot be realized.
Because the traditional SMD quartz crystal resonator is generally manufactured by a single piece, the production efficiency is extremely low, the invention patent application number is 201510746226, the invention name is a novel SMD quartz crystal resonator and a processing method using a ceramic whole board as a substrate in the whole board packaging process thereof, the problem of low production efficiency is solved, a plurality of quartz crystal bases which are arranged in a matrix are arranged on the ceramic whole board, the bases are connected, through holes 17 are formed in the connection vertex angles of every two adjacent bases, four electrodes are arranged on the back surfaces of the bases, and the electrodes between the adjacent bases are connected with each other through electrode connecting wires 19, as shown in fig. 1-2.
Firstly, processing quartz crystal resonators on each base, then performing laser seal welding with a whole plate cover plate to form a whole plate quartz crystal resonator, and finally forming a single resonator by whole plate splinter. The splitting principle is as follows: before sintering the ceramic whole plate, cutting the front surface of the ceramic whole plate by using a cutter, and forming a crack line on the front surface of the ceramic whole plate after sintering; the back of the ceramic whole plate is not provided with a split plate line, and the back of the ceramic plate is cut by laser after the whole plate resonator is processed.
Because the front split line after sintering can generate micro deformation, no matter how high the positioning accuracy is, the laser cutting line on the back of the ceramic plate is difficult to align with the front split line 18 of the ceramic plate, and the edge of a single resonator formed by split is easy to generate the problems of burrs, bevel edges, damage and the like.
If the bottom surface and the front surface of the ceramic whole plate are simultaneously cut by using cutters which are aligned up and down strictly before sintering the ceramic whole plate, two symmetrical split plate lines are formed, and the split plate lines break electrode connecting lines among the bases to connect, so that electroplating cannot be realized by post-processing of the quartz crystal resonator.
If the front and back split plate lines are cut after the quartz crystal resonator is processed, the ceramic whole plate is sintered, so that the ceramic whole plate has high hardness, a common cutter for grooving cannot be used, laser lines are required to be drawn, the symmetry of the upper surface and the lower surface is difficult to ensure, and the problems of burrs, bevel edges, damage and the like of the split resonator still exist.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a substrate structure of a whole-plate SMD quartz crystal resonator, which has smooth surface and high production efficiency.
The technical scheme for solving the technical problems is as follows: the substrate structure of the whole-board SMD quartz crystal resonator comprises a ceramic whole board, wherein the ceramic whole board comprises a plurality of quartz crystal bases which are arranged in a matrix, the front surface of each quartz crystal base is provided with an annular metallized coating, the inner left side of the ring is provided with dispensing platforms A and B for dispensing wafers, the inner right side of the ring is provided with a supporting platform for supporting wafers, the back surface of the ring is provided with four electrodes, the annular metallized coating, the dispensing platforms A and B and the four electrodes are in conductive connection,
the base is provided with a through hole filled with a conductive material, the through hole comprises a first through hole, a second through hole, a third through hole and a fourth through hole, the four electrodes are respectively a first electrode, a second electrode, a third electrode and a fourth electrode, and the annular metallized coating is respectively connected with the second electrode and the fourth electrode which are arranged diagonally in a conducting way through the conductive material filled in the second through hole and the fourth through hole;
the ceramic whole plate comprises an upper ceramic substrate and a lower ceramic substrate, through holes are formed in the junction of every two adjacent quartz crystal bases, each through hole comprises an upper through hole formed in the upper ceramic substrate and a lower through hole formed in the lower ceramic substrate, a metal coating is arranged on the inner wall of each lower through hole, and electrodes between the adjacent bases are connected in a conducting manner through metal wires and the metal coating on the inner wall of each through hole;
the upper ceramic substrate and the lower ceramic substrate are respectively provided with a split plate line, and the split plate lines are arranged in a matrix and penetrate through the circle center of the through hole.
The substrate structure of the SMD quartz crystal resonator has the beneficial effects that: the ceramic whole plate is directly used in the production process of the resonator, the single transfer of the ceramic whole plate is not required on a tool, the occupied space is small, the production efficiency is high, the production cost is low, the front and the back of the ceramic whole plate are provided with split plate lines, after the split plate lines are cut on the back, as the metal coating on the inner wall of the through hole can not be completely removed, the electrodes between the bases can still be conducted and connected through the metal lines and the metal coating on the inner wall of the through hole, before the single resonator is finally formed, the metal lines for connecting the electrodes and the metal coating are required to be cut off, after the cutting, the first electrode and the third electrode can still be conducted with the dispensing platform through the first through hole and the third through hole, the second electrode and the fourth electrode can still be conducted with the annular metallized coating through the second through hole and the fourth through hole, the single resonator formed after the split plate can still be subjected to fine adjustment etching, in the processing process of the whole plate resonator, the split plate lines can be simultaneously cut on the two sides of the ceramic substrate, the split plate lines are convenient for the subsequent split plate process, and the surface effect of the single resonator formed after the split plate is good.
Further, the depth of the crack lines is less than half the thickness of the underlying ceramic substrate.
Further, the dispensing platform A and the dispensing platform B are respectively connected with the first electrode and the third electrode which are arranged diagonally through conductive materials poured into the third through hole and the first through hole in a conducting way.
Further, the dispensing platform A is connected to the third through hole through a metal connecting wire.
Further, the ceramic substrate is made of alumina material.
Furthermore, the dispensing platforms A and B, the metal connecting wires and the electrodes all adopt tungsten metal.
The invention also relates to a processing method of the substrate structure of the whole-board SMD quartz crystal resonator, which comprises the following steps: a processing method of a substrate structure of a whole-board SMD quartz crystal resonator,
1) Preparing or providing a ceramic substrate, wherein two layers of ceramic substrates are adopted, namely an upper layer ceramic substrate and a lower layer ceramic substrate;
2) Punching through holes and through holes on the ceramic substrate, wherein the through holes are respectively punched on the upper ceramic substrate and the lower ceramic substrate in a matrix arrangement to form a plurality of quartz crystal bases in a matrix arrangement, and each through hole comprises an upper through hole arranged on the upper ceramic substrate and a lower through hole arranged on the lower ceramic substrate;
3) The lower through hole is metallized to enable the inner wall of the lower through hole to be attached with a metal coating, and the inner wall of the upper through hole is free of the metal coating;
4) Carrying out metallization printing on the upper ceramic substrate and the lower ceramic substrate, wherein the metallization printing comprises printing of an annular metallization coating, an electrode, a metal layer of the dispensing platforms A and B and a supporting platform, so that the electrode is in conductive connection with the dispensing platforms A and B and the annular metallization coating;
5) Laminating, namely printing an adhesive between the upper ceramic substrate and the lower ceramic substrate, so that the upper ceramic substrate and the lower ceramic substrate are laminated together to form a ceramic whole plate;
6) Dividing the split plate lines, namely cutting the split plate lines which are arranged in a matrix on the front and back of the ceramic whole plate, wherein the split plate lines pass through the circle centers of the through holes;
7) Sintering the ceramic whole plate;
8) A nickel layer and a gold layer are electroplated on the second metal layer, nickel is electroplated on the second metal tungsten, and then gold is electroplated.
The processing method has the beneficial effects that: the whole ceramic plate is directly adopted for transmission in the production process, the whole ceramic plate is not required to be transferred on a tool, the occupied space is small, the production efficiency is high, the front surface and the back surface of the whole ceramic plate are both provided with split plate lines, after the split plate lines are cut on the back surface, as the metal coating on the inner wall of the through hole can not be completely removed, the electrodes between the bases can still be conducted and connected through the metal lines and the metal coating on the inner wall of the through hole, the problem that the split plate lines can not be cut on the two surfaces of the ceramic substrate simultaneously in the whole resonator processing technology is solved, the split plate lines are cut on the two surfaces so as to facilitate the subsequent split plate technology, and the single resonator formed after the split plate has good surface effect.
In step 1), the raw materials are smashed firstly, then the ceramic plate is obtained through casting and forming, then the ceramic plate is cut to obtain a ceramic whole plate, and finally a frame is inlaid on the periphery of the ceramic plate so as to facilitate the fixation of the plate in the subsequent process.
Further, in step 2), when punching the through holes, a first through hole, a second through hole, a third through hole and a fourth through hole are punched on each base, wherein the first through hole and the third through hole are positioned at the diagonal positions of each base, and the second through hole and the fourth through hole are positioned at the diagonal positions of each base.
Further, in the step 4), the front and the back of the ceramic substrate are respectively metallized,
printing a first metal layer at the positions of the annular metallized coating, the dispensing platforms A and B, the supporting platform and the four electrodes, wherein the first metal layer is made of tungsten;
and after the first metal layer is dried, printing a second metal layer on the first metal layer at the positions of the dispensing platforms A and B and the supporting platform, wherein the second metal layer is made of tungsten.
In step 6), the lines of the split plates are split, and two lines of split plates which are vertically symmetrical are formed at one time by utilizing cutters which are vertically symmetrical.
Further, in step 4), after the metallization printing, a step of smoothing the metal layer is further included.
In step 6), after the cutting of the split plate line is completed, the frame inlaid in step 1) can be removed.
Drawings
FIG. 1 is a schematic diagram of the front structure of a part of a ceramic whole plate in the prior art;
FIG. 2 is a schematic view of the back structure of a portion of a ceramic monolith of the prior art;
FIG. 3 is a schematic view of the back structure of the base of the present invention;
FIG. 4 is a schematic view of the front structure of the base of the present invention;
FIG. 5 is a schematic diagram of the front structure of a portion of a ceramic monolith according to the present invention;
FIG. 6 is a schematic view of the back structure of a portion of a ceramic monolith according to the present invention;
FIG. 7 is a schematic diagram of the front structure of a ceramic monolith according to the present invention;
FIG. 8 is a schematic view of the back structure of the ceramic monolith according to the present invention;
FIG. 9 is a schematic diagram showing the front structure of a conventional ceramic whole plate for single machining;
FIG. 10 is a schematic view showing the back structure of a conventional ceramic whole plate for single machining;
FIG. 11 is a schematic view showing a state in which conductive connection between adjacent base electrodes is cut off on a conventional single-piece ceramic whole plate;
fig. 12 is a schematic view showing a state of cutting a metal wire in the present invention;
in the drawings, the list of component names indicated by the respective reference numerals is as follows: 1. the electrode comprises a first through hole, 2, a second through hole, 3, a third through hole, 4, a fourth through hole, 5, a first electrode, 6, a second electrode, 7, a third electrode, 8, a fourth electrode, 9, a lower ceramic substrate, 10, a metal coating, 11, an upper ceramic substrate, 12, dispensing platforms A and 13, dispensing platforms B and 14, an annular metallization coating, 15, a metal connecting wire, 16, a supporting platform, 17, a through hole, 18, a split plate wire, 19, an electrode connecting wire, 20, a metal wire, 21 and a cutting line.
Detailed Description
The principles and features of the present invention are described below with reference to the drawings, the examples are illustrated for the purpose of illustrating the invention and are not to be construed as limiting the scope of the invention.
The substrate structure of the existing whole-board SMD quartz crystal resonator is shown in fig. 1-2, and comprises a ceramic whole board, wherein a plurality of quartz crystal bases arranged in a matrix are arranged on the ceramic whole board, an annular metallized coating is arranged on the front surface of each quartz crystal base, dispensing platforms A and B for dispensing wafers are arranged on the left side of each ring, a supporting platform for supporting wafers is arranged on the right side of each ring, four electrodes are arranged on the back surface of each ring, the annular metallized coating, the dispensing platforms A and B and the four electrodes are in conductive connection, the electrodes of adjacent bases are connected through electrode connecting wires 19, the front surface of the ceramic whole board is provided with split plate wires 18 arranged in a matrix, the back surface of the ceramic whole board is free of split plate wires, micro deformation can occur due to the split plate wires 18 arranged on the front surface after sintering in the later stage, no matter how high positioning accuracy is, the ceramic whole board is difficult to align with the split plate wires formed in the earlier stage, the problems of burrs, the bevel edges and damage easily occur on the edges of the formed single resonator after laser cutting, if the split plate wires 18 are arranged on the back surface of the ceramic whole board, the split plate wires are connected through the electrode connecting wires 19, the subsequent production processes can not be greatly reduced, and all the electroplating processes can be completed.
The technical scheme of the invention is as shown in fig. 3-8, the substrate structure of the whole-plate SMD quartz crystal resonator comprises a ceramic whole plate, wherein the ceramic whole plate comprises a plurality of quartz crystal bases which are arranged in a matrix, the front surface of each quartz crystal base is provided with an annular metallized coating 14, the left side in the annular metallized coating is provided with a dispensing platform A12 and a dispensing platform B13 for dispensing wafers, the right side in the ring is provided with a supporting platform 16 for supporting the wafers, the back surface of the ring is provided with four electrodes, and the annular metallized coating 14, the dispensing platforms A12 and B13 and the four electrodes are in conductive connection;
the base is provided with a through hole filled with a conductive material, the through hole comprises a first through hole 1, a second through hole 2, a third through hole 3 and a fourth through hole 4, the four electrodes are respectively a first electrode 5, a second electrode 6, a third electrode 7 and a fourth electrode 8, and the annular metallized coating 14 is respectively connected with the second electrode 6 and the fourth electrode 8 which are arranged diagonally in a conductive way through the conductive material filled in the second through hole 2 and the fourth through hole 4;
the ceramic whole plate comprises an upper ceramic substrate 11 and a lower ceramic substrate 9, through holes 17 are formed in the junction of every two adjacent quartz crystal bases, each through hole 17 comprises an upper through hole formed in the upper ceramic substrate 11 and a lower through hole formed in the lower ceramic substrate 9, a metal coating 10 is arranged on the inner wall of each lower through hole, and the through holes 17 enable electrodes on the adjacent quartz crystal bases to be connected in a conducting mode through the metal coating 10 and metal wires 20.
If the inner wall of the upper through hole is also provided with a metal coating 10, when the circuit board is welded, soldering tin covers the resonator electrode and the metal coating on the inner wall of the through hole 17, because the top of the upper through hole is close to the resonator cover plate, and the breaking seam of the lower breaking metal wire 20 is small, then because the resonator cover plate is respectively communicated with the resonator grounding electrode (namely the second electrode 6 and the fourth electrode 8) through the second through hole 2 and the fourth through hole 4, when insulation resistance between the grounding electrode and the resonator electrode is tested under the condition of power-up (200V), the total gap is too small, and the insulation resistance between the resonator cover plate, the metal coating and the resonator electrode (the first electrode and the third electrode) does not reach the standard of 500 Mohms, and even the resonator electrode (the first electrode and the third electrode) is short-circuited with the grounding electrode.
The upper ceramic substrate 11 and the lower ceramic substrate 9 are respectively provided with a split line 18, and the split lines 18 are arranged in a matrix and pass through the center of the through hole 17.
The ceramic whole plate can be made of alumina materials and the like;
the dispensing platform A12 and the dispensing platform B13 are respectively connected with the diagonally arranged first electrode 5 and third electrode 7 in a conducting way through the conductive material poured into the third through hole 3 and the first through hole 1.
The dispensing platform a12 is connected to the third through hole 3 through a metal wire 15.
The invention also relates to a processing method of the substrate structure of the whole-board SMD quartz crystal resonator, which comprises the following specific steps:
1) Preparing or providing a ceramic substrate, namely, adopting two layers of ceramic substrates, namely an upper ceramic substrate and a lower ceramic substrate, firstly smashing raw materials, then carrying out tape casting and forming to obtain a ceramic plate, then cutting the ceramic plate to obtain a ceramic whole plate, and finally embedding a frame on the periphery of the ceramic substrate so as to facilitate the fixation of the substrate in the subsequent process;
2) Punching holes and through holes 17 on the ceramic substrate, punching holes and through holes 17 on the upper ceramic substrate 11 and the lower ceramic substrate 9, punching through holes 17 which are arranged in a matrix on the upper ceramic substrate 11 and the lower ceramic substrate 9 which are aligned vertically, wherein the through holes 17 comprise upper through holes arranged on the upper ceramic substrate 11 and lower through holes arranged on the lower ceramic substrate 9, and when the holes are punched, the diagonal positions of the bases on the ceramic substrate are respectively punched with a first through hole 1, a second through hole 2, a third through hole 3 and a fourth through hole 4, wherein the first through hole 1 and the third through hole 3 are in diagonal positions, and the second through hole 2 and the fourth through hole 4 are in diagonal positions;
3) The through hole 17 is metallized to make the inner wall of the through hole attach with the metal coating 10, the inner wall of the lower through hole is attached with the metal coating 10, and the inner wall of the upper through hole is not provided with the metal coating 10;
4) The metallization printing is carried out on the front surface 11 and the back surface 9 of the ceramic substrate, the metallization printing comprises the printing of an annular metallization coating 14, electrodes, metal layers of dispensing platforms A12 and B13 and a supporting platform 16, and a first metal layer is printed at the positions of the annular metallization coating 14, the dispensing platforms A12 and B13, the supporting platform 16 and the four electrodes, so that the electrodes are in conductive connection with the dispensing platforms A and B and the annular metallization coating through holes and metal connecting wires 15;
after the first metal layer is dried, the first metal layer is made of metal tungsten, and then a second metal layer is printed on the first metal layer at the positions of the dispensing platforms A and B and the supporting platform, wherein the second metal layer is made of metal tungsten;
and finally, carrying out smoothing treatment on the metal layer.
5) Laminating, printing adhesive (such as glue) between the upper ceramic substrate and the lower ceramic substrate, and laminating the upper ceramic substrate and the lower ceramic substrate together.
6) Dividing the split plate lines, namely cutting split plate lines 18 which are arranged in a matrix on the front and back of the ceramic whole plate, wherein the split plate lines 18 pass through the circle centers of the through holes 17, when dividing the split plate lines 18, two split plate lines 18 which are vertically symmetrical are formed at one time by utilizing cutters which are vertically symmetrical, the depth of the split plate lines 18 is smaller than the thickness of the metal coating 10, and after the split plate lines are formed on the back, the adjacent base upper electrodes can still be conducted by the metal coating 10 and the metal lines 20;
7) Sintering the ceramic whole plate;
8) And electroplating a nickel layer and a gold layer on the second metal layer.
When the substrate structure of the whole-board SMD quartz crystal resonator is used for producing the resonator, the substrate structure further comprises: arranging, cleaning and coating the wafers; placing the coated wafer into each base on the whole base plate, dispensing and solidifying, cutting off the metal wire 20 on each base, namely the metal wire between the electrode and the metal coating 10, cutting off the metal wire on each base, as shown in fig. 12, cutting off the metal wire 20, and enabling the dispensing platforms A12 and B13 to be respectively connected in a conducting manner through the third through hole 3 and the first through hole 1 which are filled with metal materials, so that each resonant piece on the whole base plate can be etched and finely adjusted; and then packaging the metal cover plate and the whole plate resonant piece, cutting the metal cover plate by using laser, and finally cracking the plate to form a single resonator.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (8)
1. The utility model provides a whole board SMD quartz crystal resonator base plate structure, includes the whole board of pottery, including being a plurality of quartz crystal bases of matrix arrangement on the whole board of pottery, every the front of quartz crystal base is equipped with annular metallization coating, the left side is equipped with the point gum platform A and B that are used for the wafer point to glue in the annular metallization coating, the right side is equipped with the supporting platform who is used for supporting the wafer in the annular metallization coating, and the base back is equipped with four electrodes, switch on between annular metallization coating, point gum platform A and B and the four electrodes and connect, its characterized in that:
the base is provided with a through hole filled with a conductive material, the through hole comprises a first through hole, a second through hole, a third through hole and a fourth through hole, the four electrodes are respectively a first electrode, a second electrode, a third electrode and a fourth electrode, and the annular metallized coating is respectively connected with the second electrode and the fourth electrode which are arranged diagonally in a conducting way through the conductive material filled in the second through hole and the fourth through hole;
the ceramic whole plate comprises an upper ceramic substrate and a lower ceramic substrate, through holes are formed in the junction of every two adjacent quartz crystal bases, each through hole comprises an upper through hole formed in the upper ceramic substrate and a lower through hole formed in the lower ceramic substrate, a metal coating is arranged on the inner wall of each lower through hole, and electrodes between the adjacent bases are connected in a conducting manner through metal wires and the metal coating on the inner wall of each through hole;
the upper ceramic substrate and the lower ceramic substrate are respectively provided with a split plate line, and the split plate lines are arranged in a matrix and penetrate through the circle center of the through hole.
2. The processing method of the substrate structure of the whole-board SMD quartz crystal resonator is characterized by comprising the following steps of:
1) Preparing or providing a ceramic substrate, wherein two layers of ceramic substrates are adopted, namely an upper layer ceramic substrate and a lower layer ceramic substrate;
2) Punching holes and through holes on the upper layer ceramic substrate and the lower layer ceramic substrate, wherein the through holes are respectively punched on the upper layer ceramic substrate and the lower layer ceramic substrate in a matrix arrangement, and each through hole comprises an upper through hole arranged on the upper layer ceramic substrate and a lower through hole arranged on the lower layer ceramic substrate;
3) Carrying out metallization treatment on the lower through hole to enable the inner wall of the lower through hole to be attached with a metal coating;
4) The upper ceramic substrate and the lower ceramic substrate are subjected to metallization printing, and the metal layers of the annular metallization coating, the electrodes, the dispensing platforms A and B and the support platform are printed, so that the electrodes are connected with the dispensing platforms A and B and the annular metallization coating in a conducting manner to form a plurality of quartz crystal bases which are arranged in a matrix;
5) Laminating, namely printing an adhesive between the upper ceramic substrate and the lower ceramic substrate to laminate the upper ceramic substrate and the lower ceramic substrate together;
6) Dividing the split plate lines, namely cutting the split plate lines which are arranged in a matrix on the front and back of the ceramic whole plate, wherein the split plate lines pass through the circle centers of the through holes;
7) Sintering the ceramic whole plate;
8) And electroplating a nickel layer and a gold layer on the second metal layer.
3. The method of claim 2, wherein in step 1), when preparing the ceramic substrate, the raw material is broken, then the ceramic plate is obtained by casting and molding, then the ceramic plate is cut to obtain a ceramic whole plate, and finally a frame is inlaid at the periphery of the ceramic substrate to facilitate the fixation of the substrate in the subsequent process.
4. The method of claim 2, wherein in step 2), in the step of punching the through holes, a first through hole, a second through hole, a third through hole and a fourth through hole are respectively punched at diagonal positions of each base on the ceramic substrate, wherein the first through hole and the third through hole are at diagonal positions, and the second through hole and the fourth through hole are at diagonal positions.
5. The method for processing the substrate structure of the whole-board SMD quartz crystal resonator according to claim 2, wherein in the step 4), metallization printing is performed on the front surface and the back surface of the ceramic substrate, respectively, and a first metal layer is printed at the positions of the annular metallization coating, the dispensing platforms a and B, the supporting platform and the four electrodes, wherein the first metal layer is made of tungsten;
and after the first metal layer is dried, printing a second metal layer on the first metal coating at the positions of the dispensing platforms A and B and the supporting platform, wherein the second metal layer is made of tungsten.
6. The method of claim 2, wherein in step 6), the split lines are split, and two split lines are formed at a time by using a vertically symmetrical cutter.
7. The method of claim 2, further comprising the step of smoothing the metal layer after the metallization printing in step 4).
8. The method of claim 2, wherein in step 6), after the split line is cut, the frame inlaid in step 1) is removed.
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| CN201710680969.1A CN107517044B (en) | 2017-08-10 | 2017-08-10 | Substrate structure of whole-board SMD quartz crystal resonator and processing method thereof |
| PCT/CN2018/073696 WO2019029132A1 (en) | 2017-08-10 | 2018-01-23 | Smd quartz crystal resonator substrate plate structure and processing method therefor |
| TW107105036A TWI657660B (en) | 2017-08-10 | 2018-02-12 | The substrate structure and processing methods for a type of array surface-mounted crystal unit |
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| CN109585162B (en) * | 2018-12-29 | 2020-11-17 | 广东芯晟电子科技有限公司 | Low-stress single-layer chip capacitor and preparation method thereof |
| CN116455343B (en) * | 2023-05-15 | 2024-01-23 | 烟台明德亨电子科技有限公司 | Processing method of ceramic base for crystal oscillator |
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Also Published As
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| CN107517044A (en) | 2017-12-26 |
| TWI657660B (en) | 2019-04-21 |
| TW201911745A (en) | 2019-03-16 |
| WO2019029132A1 (en) | 2019-02-14 |
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