CN116455343B - Processing method of ceramic base for crystal oscillator - Google Patents
Processing method of ceramic base for crystal oscillator Download PDFInfo
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- CN116455343B CN116455343B CN202310551615.2A CN202310551615A CN116455343B CN 116455343 B CN116455343 B CN 116455343B CN 202310551615 A CN202310551615 A CN 202310551615A CN 116455343 B CN116455343 B CN 116455343B
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- 239000000919 ceramic Substances 0.000 title claims abstract description 300
- 239000013078 crystal Substances 0.000 title claims abstract description 18
- 238000003672 processing method Methods 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 38
- 238000005520 cutting process Methods 0.000 claims abstract description 27
- 238000012545 processing Methods 0.000 claims abstract description 25
- 238000004080 punching Methods 0.000 claims abstract description 17
- 229910000833 kovar Inorganic materials 0.000 claims description 20
- 238000009713 electroplating Methods 0.000 claims description 18
- 238000007747 plating Methods 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000012811 non-conductive material Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 230000001680 brushing effect Effects 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 20
- 238000005516 engineering process Methods 0.000 abstract description 6
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000004513 sizing Methods 0.000 abstract 1
- 102100037224 Noncompact myelin-associated protein Human genes 0.000 description 7
- 101710184695 Noncompact myelin-associated protein Proteins 0.000 description 7
- 230000002950 deficient Effects 0.000 description 5
- 101001005165 Bos taurus Lens fiber membrane intrinsic protein Proteins 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 238000005219 brazing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a processing method of a ceramic base for crystal oscillator, which omits a flattening step in the traditional ceramic substrate processing technology based on a new wiring mode and an assembly technology, adjusts the sequence of angle punching steps in the whole technological process, avoids deformation and position deviation of angle holes of different layers of a substrate, ensures the coincidence ratio of upper and lower pre-cutting grooves by adopting the same reference object in the upper pre-cutting step and the lower pre-cutting step, improves the position accuracy of printing sizing agent of different layers of the substrate, and greatly improves the consistency of the yield and quality of the substrate.
Description
Technical Field
The invention relates to the field of electronic component processing, in particular to a processing method of a ceramic base for crystal oscillator.
Background
The structure of the patch type crystal oscillator mainly comprises three parts: the ceramic base bears the bearing and electric connection functions, and the ceramic base is most complex to process and produce. The ceramic base is a ceramic cavity with an open upper part, the wafer is arranged in the cavity, and then the wafer is covered in a vacuum environment to form a crystal oscillator finished product.
The ceramic base is divided into three layers, the bottommost layer is a first ceramic plate, the middle is a second ceramic plate, the uppermost is a kovar ring, and the three layers are tightly combined together. The first ceramic plate and the second ceramic plate are ceramic materials, the upper surface of the first ceramic plate is provided with a conductive dispensing table, the lower surface of the first ceramic plate is provided with a connecting electrode for connecting the PCB, the upper surface of the second ceramic plate is provided with a conductive layer so that a kovar ring can be connected through brazing, when the ceramic base is processed, the ceramic base is still ceramic, the basic electric connection function is realized in a printing mode for the position where electric connection is required, after the ceramic base is sintered and hardened, all conductive areas are required to be subjected to electroplating treatment in an electroplating mode, and the electric connection of the conductive layer on the single ceramic base, namely the dispensing table on the upper surface of the first ceramic plate, the connecting electrode on the lower surface of the first ceramic plate and the upper surface of the second ceramic plate is realized by arranging conductive through holes on the first ceramic plate and the second ceramic plate. In order to improve the production efficiency, a monolithic ceramic substrate is generally divided into a plurality of ceramic bases which are adjacent to each other and are arranged in a matrix, in order to enable all ceramic bases on the monolithic ceramic substrate to be subjected to electroplating operation at the same time, all conductive areas on all ceramic bases on the monolithic ceramic substrate need to be communicated together before being separated, on the other hand, the ceramic bases are finally used one by one, in order to facilitate the subsequent separation, when the ceramic bases are ceramic bases or raw ceramics, a cutting groove needs to be cut in advance between adjacent ceramic bases, the process is called pre-cutting, the process can pre-cut the front and back sides of the ceramic substrate, and the front and back sides of the ceramic substrate cannot be provided with structures for electrically connecting the adjacent ceramic bases, and specifically: in the traditional assembly process, when the ceramic base, the wafer and the cover plate are assembled, the ceramic base is assembled one by one, in this case, the assembly link requires that the ceramic base is in a single form, in this process environment, the pre-cutting process is to respectively arrange cutters on the front side and the back side of the ceramic base to form a pair of cutters, the cutting edges of the pair of cutters are mutually aligned, and the two cutters simultaneously pre-cut the ceramic base, so that the pre-cutting grooves on the front side and the back side of the ceramic base are ensured to be in a plane, and the pre-cutting grooves on the two sides of the pre-cutting link are not communicated, namely are not cut thoroughly, so that the ceramic base on the ceramic base is ensured to be still mutually connected. Therefore, in this process environment, in order to enable electrical connection between adjacent ceramic bases on the ceramic substrate, an electrical connection structure has to be provided between the first ceramic plate and the second ceramic plate, and as described above, the precut grooves on both sides of the processing link do not penetrate, and the structure for implementing electrical connection between adjacent ceramic bases is provided at the portion that is not cut through in the precut step. The arrangement ensures that an independent conductive structure is arranged between the first ceramic plate and the second ceramic plate, the conductive structure has a certain thickness, and the inside of the finished crystal oscillator is in a vacuum state, so that the air tightness of a ceramic base is ensured, and in order to avoid a gap for generating air leakage between the first ceramic plate and the second ceramic plate by the conductive structure, in the traditional process, after the conductive structure is printed on the upper surface of the first ceramic plate, a flattening step is provided, so that the conductive structure is completely embedded into the first ceramic plate and the second ceramic plate, and the gap is prevented from being generated by the fact that the first ceramic plate and the second ceramic plate are not tightly overlapped; it is anticipated that the flattening step will result in a certain deformation of the first ceramic plate. The deformation can not adapt to the assembly process of the whole plate processing of the processed ceramic substrate.
In a specific processing step, the processing part of the previous step is often used as a reference, and specifically, the processing steps of the traditional process are as follows:
SS1, punching a positioning groove on a first ceramic plate and punching an inner cavity on a second ceramic plate; punching corner holes and through holes on the second ceramic plate by taking the inner cavity of the second ceramic plate as a reference position, punching corner holes and through holes on the first ceramic plate by taking the reference position of the positioning groove of the first ceramic plate, wherein the corner holes are conductive holes at the connection positions of four adjacent ceramic bases on the whole ceramic substrate, and are called corner holes because the corner holes are positioned at four corners of a single ceramic base, and the through holes are conductive holes for connecting the upper surface and the lower surface of the first ceramic plate and the upper surface and the lower surface of the second ceramic plate; filling the through holes on the first ceramic plate and the second ceramic plate with conductive paste respectively;
SS2, printing a conductive structure on the upper surface of the second ceramic plate by taking the corner holes of the second ceramic plate as reference positions, and printing a conductive structure on the upper surface of the first ceramic plate by taking the corner holes of the first ceramic plate as reference positions;
SS3, flattening, so that the conductive structure printed on the first ceramic plate is embedded into the first ceramic plate;
SS4, printing the conductive structure of the dispensing table;
SS5, stacking the second ceramic plate and the first ceramic plate by taking corner holes of the first ceramic plate and the second ceramic plate and an inner cavity of the second ceramic plate as reference positions, and pressing the second ceramic plate and the first ceramic plate together;
the SS6 takes corner holes and through holes of the first ceramic plate as reference positions, and a conductive structure is printed on the lower surface of the first ceramic plate;
SS7, pre-dividing grooves are respectively formed in the lower surface of the first ceramic plate and the upper surface of the second ceramic plate by taking the inner cavity of the second ceramic plate as a reference position;
SS8, sintering, primary electroplating, upper kovar ring, braze welding kovar ring and secondary electroplating in sequence;
SS9, carrying out splitting treatment along the precutting groove to obtain a single ceramic base.
The disadvantages caused by some steps in the above-mentioned process do not cause great loss in the single assembly process, but cause serious consequences in the whole board assembly process:
on the one hand, due to the flattening step, partial ceramic bases can be deformed into defective products, and when a single assembly process is adopted, only the single defective products are selected for discarding, so that other products are not affected; however, in the whole board assembly process, there are hundreds of ceramic bases on one ceramic substrate, and one defective product can cause that all other hundreds of ceramic bases are abandoned, so that defective products caused by flattening can cause serious consequences in the whole board assembly process, which is not acceptable.
On the other hand, unlike the single-assembly-time ceramic bases shipped in a single form, the whole-plate assembly process is performed, the ceramic bases shipped in the whole-plate form are separated to obtain a single finished crystal oscillator, and the structure for maintaining the electrical connection between all the ceramic bases on the whole-plate ceramic substrate is arranged on the lower surface of the first ceramic plate based on the whole-plate assembly process, i.e. a new wiring mode is designed, therefore, in the process, the ceramic bases are required to ensure the electrical connection relation between the adjacent ceramic bases before the electroplating step is completed, the lower surface of the first ceramic plate cannot be precut, only one precut (called upper precut) can be performed from the upper surface direction of the second ceramic plate, so that the lower precut step performed on the lower surface of the ceramic base and the upper precut step performed on the upper surface of the ceramic base must be performed twice, which leads to the problem of ensuring the consistent cutting positions in the two precut steps.
In still another aspect, the inner cavity of the second ceramic plate is used as a reference position, the conductive structure printed on the upper surface of the first ceramic plate is used as a reference position by using the corner hole of the first ceramic plate, and because the first ceramic plate deforms in the step of flattening after the conductive structure is printed, the conductive structure printed on the upper surface of the first ceramic plate is further caused to deviate, so that position deviation occurs when a finished product is dispensed and a wafer is assembled, quality consistency is poor, and qualification rate is affected.
In summary, due to the development of new assembly processes, the ceramic base produced by a single assembly process cannot well meet the requirements of the whole board assembly process, and the processing process of the ceramic substrate needs to be improved necessarily, so that the rate of defective products of the whole board assembly is reduced, and the quality of products is improved.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: the novel ceramic base processing method is provided, and the process for assembling the whole adapting plate is improved.
In order to solve the technical problems, the invention adopts the following technical scheme:
the processing method of the ceramic base for the crystal oscillator comprises the steps of:
s1, processing a first ceramic plate and a second ceramic plate;
the processing of the first ceramic plate includes: punching a positioning groove on the first ceramic plate; punching a through hole on the first ceramic plate by taking a positioning groove of the first ceramic plate as a reference; conducting treatment is carried out on the through holes on the first ceramic plate; printing an intracavity conductive structure on the upper surface of the first ceramic plate by taking a positioning groove of the first ceramic plate as a reference position;
the processing of the second ceramic plate includes:
punching an inner cavity of the second ceramic plate; punching a through hole on the second ceramic plate by taking the inner cavity of the second ceramic plate as a reference position; conducting treatment is carried out on the through holes on the second ceramic plate; printing a third conductive structure on the upper surface of the second ceramic plate by taking the inner cavity of the second ceramic plate as a reference position;
the cavity conductive structure comprises a first conductive structure directly printed on the upper surface of the first ceramic plate and a second conductive structure printed above the first conductive structure;
s2, stacking the second ceramic plate and the first ceramic plate by taking a positioning groove or an in-cavity conductive structure of the first ceramic plate and an inner cavity of the second ceramic plate as reference positions, and pressurizing, heating and pressing;
s3, taking the inner cavity of the second ceramic plate as a reference position, and simultaneously chamfering holes are drilled on the second ceramic plate and the first ceramic plate which are overlapped together;
s4, printing a third conductive structure on the lower surface of the first ceramic plate by taking the corner hole as a reference position;
s5, pre-cutting a cutting groove on the upper surface of the second ceramic plate by taking the corner hole as a reference position;
s6, sintering, primary electroplating, upper kovar ring, braze welding kovar ring and secondary electroplating are sequentially carried out;
s7, obtaining the ceramic base of the whole plate.
Compared with the prior art, the invention has the following technical effects:
on the one hand, in the original processing technology, the position deviation of the conducting structure in the cavity on the upper surface of the first ceramic plate can be generated after the flattening step, in the scheme, the first ceramic plate does not need to be singly flattened, so that deformation is not generated, and the position of the first conducting structure on the upper surface of the first ceramic plate can not be deviated;
in the original processing technology, the conducting structure in the cavity on the upper surface of the first ceramic plate is positioned and printed based on the corner holes of the first ceramic plate, and the third conducting structure on the upper surface of the second ceramic plate is positioned and printed based on the corner holes of the second ceramic plate;
in the third aspect, the upper kovar ring is operated with reference to the inner cavity of the second ceramic plate in the traditional process, because the first ceramic plate deforms in the step of flattening after the conductive structure in the printing cavity, and then the kovar ring and the conductive structure in the cavity printed on the upper surface of the first ceramic plate deviate, so that the position deviation occurs when the finished product is glued and the wafer is assembled, the quality consistency is poor, the qualification rate is affected, after the new process is adopted, the step of flattening the first ceramic plate independently after the conductive structure in the printing cavity is omitted, the deformation of the first ceramic plate is avoided, the accuracy of the relative position of the kovar ring and the conductive structure printed on the upper surface of the first ceramic plate is further ensured, and the consistency of the product quality is improved.
According to the fourth aspect, based on the original ceramic base processing technology, the upper pre-cutting position is determined by taking the corner hole of the second ceramic plate as a reference position, and the lower pre-cutting position is determined by taking the corner hole of the first ceramic plate as a reference position, whereas in the original processing technology, the corner hole of the first ceramic plate and the corner hole of the second ceramic plate are processed independently, and the first ceramic plate is subjected to deformation in a flattening step, so that the corner hole of the final first ceramic plate and the corner hole of the second ceramic plate may have a non-overlapping condition, and further, the upper pre-cutting position in the ceramic substrate processing link is not overlapped with the lower pre-cutting position of the finished product after assembly, and the cutting is poor; after the novel process is adopted, the flattening treatment is not carried out, the first ceramic plate and the second ceramic plate are overlapped first and then are provided with angle holes uniformly, the upper pre-cutting position in the ceramic substrate processing link is ensured to be consistent with the reference standard of the lower pre-cutting position of the finished product after assembly, and the yield of the product is ensured.
On the basis of the technical scheme, the invention can be improved as follows.
Preferably, the number of through holes on the second ceramic plate is at least 2, so as to ensure the electric connection effect;
preferably, in step S6, the primary plating is nickel plating, and the secondary plating is gold plating;
preferably, in step S6, the upper kovar ring means that the kovar ring is placed on the upper surface of the second ceramic plate.
Preferably, in the step S1, each conductive structure is printed, and both size control and angle control are performed, where the size control refers to control of the width, thickness and coordinate position of the conductive structure on the printed surface, and the angle control refers to control of an included angle between adjacent boundary lines of the conductive structure.
Preferably, the third conductive structure comprises an annular conductive ring disposed around the angular hole, and after step S4, the second electroplating step in step S6 is preceded by brushing a non-conductive material on the conductive ring; the non-conductive material can be ceramic or any existing insulating material which can resist the sintering temperature of the ceramic and is easy to cut by laser, the non-conductive material isolates the conductive ring from the outside, and the secondary electroplating step is avoided, so that gold is electroplated on the conductive ring, the ceramic substrate is required to be subjected to lower pre-cutting operation by laser after crystal oscillator assembly is completed, gold is a strong reflector of the laser and is difficult to cut by the laser, the non-conductive material is used for shielding, the position needing to be cut by the laser in the future is prevented from being electroplated with gold, and the difficulty of laser cutting in the future is reduced; of course, the operation of brushing the non-conductive material can be performed before the first electroplating, so that the material which is electroplated for the first time cannot be electroplated on the conductive ring, and the effect is better. Just because the first electroplating is generally nickel plating, the nickel is also easy to cut by laser, so the difficulty of the subsequent laser cutting link can be greatly reduced only by the step of brushing the non-conductive material before the step of electroplating the gold.
Preferably, the conducting treatment of the through hole in the step S1 means that a conductive layer is electroplated on the inner surface of the through hole or a conductive substance is filled in the through hole, and the conductive substance may be solid metal or conductive paste containing metal particles.
Drawings
FIG. 1 is a schematic perspective view of a ceramic base for crystal oscillator according to the present invention;
FIG. 2 is a schematic view of a ceramic pedestal for crystal oscillator according to the present invention in partial cross section;
FIG. 3 is a schematic diagram of a second ceramic plate of the ceramic base for crystal oscillator and a conductive structure disposed thereon according to the present invention;
FIG. 4 is a schematic view of a first ceramic plate of the ceramic base for crystal oscillator and a conductive structure disposed on the upper surface thereof according to the present invention;
FIG. 5 is a schematic diagram showing the conductive structure of the lower surface of the first ceramic plate of the ceramic base for crystal oscillator according to the present invention;
FIG. 6 is a schematic structural view of a matrix arrangement of ceramic susceptors;
fig. 7 is a flow chart of the method of the present invention.
In the drawings, the list of component names indicated by the respective reference numerals is as follows:
1. a first ceramic plate; 2. a second ceramic plate; 3. a kovar ring; 4. a through hole; 5. an angular aperture; 6. a dispensing table; MP11, the first conductive structure; MP12, second conductive structure; MP21, third conductive structure; MP101, fourth conductive structure.
Detailed Description
The principles and features of the present invention are described below with reference to the drawings, the examples are illustrated for the purpose of illustrating the invention and are not to be construed as limiting the scope of the invention.
As shown in fig. 1 and 2, the ceramic base is divided into three layers, the bottom layer is a first ceramic plate 1, the middle is a second ceramic plate 2, and the uppermost is a kovar ring 3, and the three layers are tightly combined together. The first ceramic plate 1 and the second ceramic plate 2 are both made of ceramic materials, the upper surface of the first ceramic plate 1 is provided with a dispensing table 6, the dispensing table 6 is actually of a two-layer structure, as shown in fig. 2, the first ceramic plate 1 is provided with an intracavity conductive structure, and the intracavity conductive structure comprises a layer of first conductive structure MP11 which is directly arranged on the upper surface of the first ceramic plate 1 and a second conductive structure MP12 which is overlapped on the first conductive structure; the lower surface of first ceramic plate 1 is equipped with the connecting electrode of connecting the PCB board, commonly known as the pad, in this example is called fourth conductive structure MP101, the upper surface of second ceramic plate 2 is equipped with third conductive structure MP21 so that can follow-up through brazing connection kovar ring 3, the four corners of first ceramic plate 1 and second ceramic plate 2 all are equipped with angle hole 5, angle hole 5 intercommunication third conductive structure MP21 and fourth conductive structure MP101, and locate the relation for direct electric connection between first conductive structure MP11 and the second conductive structure MP12 on the first ceramic plate 1, and first conductive structure MP11 realizes the electric connection with fourth conductive structure MP101 based on through-hole 4 on the first ceramic plate 1. As shown in fig. 6, in the processing step, a monolithic ceramic substrate is divided into a plurality of ceramic bases which are adjacent to each other and arranged in a matrix, at this time, four adjacent ceramic bases share an angular hole 5, a fourth conductive structure printed on the lower surface of the ceramic substrate includes a conductive ring disposed around the angular hole 5, and the adjacent ceramic bases are electrically connected by relying on the conductive ring disposed around the angular hole 5. After the ceramic bases are assembled, the matrix ceramic bases are cut into single states, and the cutting action cuts off the electrical connection between the adjacent ceramic bases based on the angle holes 5, so that the separation of the positive electrode and the negative electrode in the finished crystal oscillator on a circuit is realized.
As shown in fig. 7, in the processing method of the ceramic base for crystal oscillator, the ceramic base includes a first ceramic plate, a second ceramic plate and a kovar ring sequentially connected from bottom to top, and the processing steps include:
s1, processing a first ceramic plate and a second ceramic plate;
the processing of the first ceramic plate includes: punching a positioning groove on the first ceramic plate; punching a through hole on the first ceramic plate by taking a positioning groove of the first ceramic plate as a reference; conducting treatment is carried out on the through holes on the first ceramic plate, and conducting structures in the cavity are printed on the upper surface of the first ceramic plate by taking the positioning grooves of the first ceramic plate as reference positions; namely, printing a first conductive structure MP11, and printing a second conductive structure MP12 on the first conductive structure MP 11;
the processing of the second ceramic plate includes:
punching an inner cavity of the second ceramic plate; punching a through hole on the second ceramic plate by taking the inner cavity of the second ceramic plate as a reference position; conducting treatment is carried out on the through holes on the second ceramic plate; printing a third conductive structure MP21 on the upper surface of the second ceramic plate by taking the inner cavity of the second ceramic plate as a reference position;
the through holes are conductive holes for connecting the upper surface and the lower surface of the second ceramic plate and the upper surface and the lower surface of the first ceramic plate, in this example, the through holes are subjected to conductive treatment, and conductive slurry is filled into the through holes;
s2, stacking the second ceramic plate and the first ceramic plate by taking a positioning groove of the first ceramic plate and an inner cavity of the second ceramic plate as reference positions, and pressurizing, heating and pressing; the first ceramic plate is not flattened independently, the first ceramic plate is not deformed, and one piece of the first ceramic plate and the second ceramic plate are heated, pressurized and pressed after being overlapped, even if the ceramic is deformed under the action of heat energy and pressure, the deformation coefficients of the first ceramic plate and the second ceramic plate are identical because the parameters born by the first ceramic plate and the second ceramic plate are identical, and relative deformation, displacement and offset cannot be generated between the first ceramic plate and the second ceramic plate;
in the step, the second ceramic plate and the first ceramic plate can be laminated by taking the inner cavities of the first conductive structure MP11 and the second ceramic plate as reference positions, and the inner cavities of the first conductive structure MP11 and the second ceramic plate can be directly observed, so that the control is facilitated;
s3, taking the inner cavity of the second ceramic plate as a reference position, and simultaneously chamfering holes are drilled on the second ceramic plate and the first ceramic plate which are overlapped together;
s4, taking the corner hole as a reference position, referring to the position of the through hole, and printing a fourth conductive structure MP101 on the lower surface of the first ceramic plate to ensure that a superposition part exists between the fourth conductive structure and the through hole and ensure the electric connection effect of the upper surface and the lower surface of the first ceramic plate; then, ceramic material is coated on the conductive ring of the fourth conductive structure MP101, which is arranged around the corner hole, and the conductive ring around the corner hole is insulated and shielded by the ceramic material, so that new substances are prevented from being electroplated on the conductive ring in the subsequent electroplating step. In general, as long as the fourth conductive structure MP101 is printed with the corner hole as a reference position, there should be an overlapping portion between the fourth conductive structure MP101 and the through hole on the first ceramic board, and in order to ensure that there is no loss, further reference is made to the position of the through hole, so as to ensure that there is an overlapping portion between the fourth conductive structure MP101 and the through hole, and ensure electrical connection between the upper surface and the lower surface of the first ceramic board.
S5, pre-cutting a cutting groove on the upper surface of the second ceramic plate by taking the corner hole as a reference position;
s6, sintering, primary electroplating, upper kovar ring, braze welding kovar ring and secondary electroplating are sequentially carried out;
s7, obtaining the ceramic base of the whole plate.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (10)
1. A processing method of a ceramic base for crystal oscillator is characterized by comprising the following steps:
s1, processing a first ceramic plate and a second ceramic plate;
the processing of the first ceramic plate includes: punching a positioning groove on the first ceramic plate; punching a through hole on the first ceramic plate by taking a positioning groove of the first ceramic plate as a reference; conducting treatment is carried out on the through holes on the first ceramic plate; printing an intracavity conductive structure on the upper surface of the first ceramic plate by taking a positioning groove of the first ceramic plate as a reference position;
the processing of the second ceramic plate includes:
punching an inner cavity of the second ceramic plate; punching a through hole on the second ceramic plate by taking the inner cavity of the second ceramic plate as a reference position; conducting treatment is carried out on the through holes on the second ceramic plate; printing a third conductive structure on the upper surface of the second ceramic plate by taking the inner cavity of the second ceramic plate as a reference position;
s2, stacking the second ceramic plate and the first ceramic plate by taking a positioning groove or an in-cavity conductive structure of the first ceramic plate and an inner cavity of the second ceramic plate as reference positions, and pressurizing, heating and pressing;
s3, taking the inner cavity of the second ceramic plate as a reference position, and simultaneously chamfering holes are drilled on the second ceramic plate and the first ceramic plate which are overlapped together;
s4, printing a fourth conductive structure on the lower surface of the first ceramic plate by taking the corner hole on the lower surface of the first ceramic plate as a reference position;
s5, pre-cutting a cutting groove on the upper surface of the second ceramic plate by taking the upper surface corner hole of the second ceramic plate as a reference position; pre-cutting grooves on the lower surface of the first ceramic plate by taking the lower surface corner holes of the first ceramic plate as reference positions;
s6, sintering, primary electroplating, upper kovar ring, braze welding kovar ring and secondary electroplating are sequentially carried out;
s7, obtaining the ceramic base of the whole plate.
2. The method of claim 1, wherein the number of through holes in the second ceramic plate is at least 2.
3. The method according to claim 1, wherein in step S6, the primary plating is nickel plating and the secondary plating is gold plating.
4. The method of claim 1, wherein in step S6, the step of placing the upper kovar ring on the upper surface of the second ceramic plate.
5. The method according to claim 1, wherein the step S1 is performed to control the dimensions and the angles of the printing process of each conductive structure.
6. The method of claim 1, wherein the third conductive structure comprises an annular conductive ring surrounding the angular hole, and further comprising brushing a non-conductive material on the conductive ring after step S4 and before the secondary plating in step S6.
7. The method of claim 1, wherein the intracavity conductive structure comprises a first conductive structure and a second conductive structure printed over the first conductive structure.
8. The method according to claim 1, wherein in the step S4, the second ceramic plate and the first ceramic plate are stacked together to form an angled hole at the same time with respect to the second ceramic plate and the through hole.
9. The method of claim 6, wherein the non-conductive material is a ceramic material.
10. The method according to claim 1, wherein the step S1 of conducting the through holes of the first ceramic plate and the second ceramic plate is to electroplate a conductive layer on the inner surface of the through hole or fill a conductive material in the through hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310551615.2A CN116455343B (en) | 2023-05-15 | 2023-05-15 | Processing method of ceramic base for crystal oscillator |
Applications Claiming Priority (1)
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| CN1490932A (en) * | 2003-08-21 | 2004-04-21 | 倪永贵 | Ceramic substrate with crystal resonator on its surface and manufacture thereof |
| CN105305995A (en) * | 2015-11-05 | 2016-02-03 | 烟台大明电子科技有限公司 | Novel SMD (Surface Mount Device) quartz crystal resonator and complete board encapsulation machining process thereof |
| WO2017107307A1 (en) * | 2015-12-22 | 2017-06-29 | 成都泰美克晶体技术有限公司 | Quartz crystal resonator having circular wafer structure and method for manufacturing same |
| CN107517044A (en) * | 2017-08-10 | 2017-12-26 | 烟台明德亨电子科技有限公司 | A kind of whole plate SMD quartz crystal resonator board structure and its processing method |
| CN107743022A (en) * | 2017-10-19 | 2018-02-27 | 深圳华远微电科技有限公司 | Ceramic CSP package substrate constructions |
| CN110784189A (en) * | 2019-12-23 | 2020-02-11 | 四川明德亨电子科技有限公司 | SMD resonator and processing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6307869B2 (en) * | 2013-12-24 | 2018-04-11 | セイコーエプソン株式会社 | Electronic components, crystal oscillators with thermostatic chambers, electronic devices, and moving objects |
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|---|---|---|---|---|
| CN1490932A (en) * | 2003-08-21 | 2004-04-21 | 倪永贵 | Ceramic substrate with crystal resonator on its surface and manufacture thereof |
| CN105305995A (en) * | 2015-11-05 | 2016-02-03 | 烟台大明电子科技有限公司 | Novel SMD (Surface Mount Device) quartz crystal resonator and complete board encapsulation machining process thereof |
| WO2017107307A1 (en) * | 2015-12-22 | 2017-06-29 | 成都泰美克晶体技术有限公司 | Quartz crystal resonator having circular wafer structure and method for manufacturing same |
| CN107517044A (en) * | 2017-08-10 | 2017-12-26 | 烟台明德亨电子科技有限公司 | A kind of whole plate SMD quartz crystal resonator board structure and its processing method |
| CN107743022A (en) * | 2017-10-19 | 2018-02-27 | 深圳华远微电科技有限公司 | Ceramic CSP package substrate constructions |
| CN110784189A (en) * | 2019-12-23 | 2020-02-11 | 四川明德亨电子科技有限公司 | SMD resonator and processing method thereof |
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