CN107517044A - A kind of whole plate SMD quartz crystal resonator board structure and its processing method - Google Patents
A kind of whole plate SMD quartz crystal resonator board structure and its processing method Download PDFInfo
- Publication number
- CN107517044A CN107517044A CN201710680969.1A CN201710680969A CN107517044A CN 107517044 A CN107517044 A CN 107517044A CN 201710680969 A CN201710680969 A CN 201710680969A CN 107517044 A CN107517044 A CN 107517044A
- Authority
- CN
- China
- Prior art keywords
- hole
- ceramic substrate
- whole plate
- quartz crystal
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 55
- 239000010453 quartz Substances 0.000 title claims abstract description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 238000003672 processing method Methods 0.000 title claims abstract description 17
- 239000000919 ceramic Substances 0.000 claims abstract description 143
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 229910052751 metal Inorganic materials 0.000 claims abstract description 78
- 239000002184 metal Substances 0.000 claims abstract description 78
- 239000011248 coating agent Substances 0.000 claims abstract description 52
- 238000000576 coating method Methods 0.000 claims abstract description 52
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 40
- 238000003491 array Methods 0.000 claims abstract description 15
- 238000004080 punching Methods 0.000 claims abstract description 4
- 238000007639 printing Methods 0.000 claims description 16
- 238000005520 cutting process Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 9
- 238000001465 metallisation Methods 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 238000005266 casting Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000009499 grossing Methods 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000010412 perfusion Effects 0.000 claims description 3
- 229910052573 porcelain Inorganic materials 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 238000010422 painting Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 3
- 238000012545 processing Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- -1 10th Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
Abstract
The present invention relates to a kind of whole plate SMD quartz crystal resonator board structure, including ceramic whole plate, include multiple quartz crystal pedestals in the ceramic whole plate, the front of the quartz crystal pedestal is provided with circular metalized coating, dispensing platform A and B and support platform are provided with ring, the back side is provided with four electrodes, and first through hole, the second through hole, third through-hole and fourth hole have been opened on the pedestal；Using two-layer ceramic substrate, through hole is provided with adjacent four quartz crystal pedestal joints, the inwall of bottom through hole is provided with metal coating；The ceramic whole plate front and the back side are equipped with and split printed line, described to split that printed line is arranged in arrays, and through the center of circle of the through hole；Further relate to a kind of processing method of above-mentioned ceramic whole plate, including punching, draw and split the steps such as printed line, plated through-hole, the surface effect of the single resonator processed using above-mentioned processing method is preferable, and production efficiency is higher.
Description
Technical field
The present invention relates to a kind of whole plate SMD quartz crystal resonator board structure and its processing method, belong to resonator knot
Structure technical field.
Background technology
SMD quartz crystal resonator is conventional electronic device, and with the development of digitizing technique, its dosage increasingly increases.
But there is improving processing efficiency and adding for aspect with processing technology in itself from device architecture for current SMD quartz crystal resonator
The technology barrier of the aspect of working medium amount.
Single traditional resonator procedure of processing is：1st, ceramics are completed by quartz-crystal resonator ceramic substrate production technology
The processing of whole plate, then carry out segmentation and select, form single SMD quartz crystal resonator base of ceramic；2nd, chip is cleaned, plates
Film, dispensing are fixed in pedestal, form single SMD Quartz crystal resonant part；3rd, work sheet sheet metal (potsherd), Gai Xie
Shake and seal on part, form single SMD quartz crystal resonator.
The processing for the ceramic whole plate completed in above-mentioned production craft step 1 as shown in figs. 9-11, if ceramic whole plate be provided with
The quartz crystal pedestal of a matrix arrangement to be done, is connected between each pedestal, the vertex of adjacent each pedestal connection is provided with through hole 17,
The inwall of through hole 17 is provided with metal coating 10, and the front of the pedestal is provided with becket or circular metalized coating, ring
Interior left side is provided with dispensing platform A12 and B13, and right side is provided with support platform, and the back side of the pedestal is provided with four electrodes, is respectively
First electrode 5, second electrode 6, the 3rd electrode 7 and the 4th electrode 8, the second through hole 2 and fourth hole are additionally provided with the pedestal
4, the electrode 8 of second electrode 6 and the 4th turns on company by the second through hole 2 and fourth hole 4 with circular metalized coating respectively
Connect, the electrode 7 of first electrode 5 and the 3rd turns on company by the metal coating 10 in through hole with dispensing platform B13 and A12
Connect；
If the ceramic whole plate produced in above-mentioned single production craft step 1 is used in whole plate processing technology, follow-up
After cutting off the interelectrode conducting connection of adjacent susceptors, as shown in line of cut 21 in Figure 11, cause first electrode and the 3rd electrode not
Connection can be turned on dispensing platform B and A, etching fine setting can not be realized.
Because traditional SMD quartz crystal resonator is typically using single making, its production efficiency is extremely low, application for a patent for invention
Number be 201510746226, make disclosed in entitled a kind of new SMD quartz crystal resonator and its whole plate packaging technology
By the use of ceramic whole plate as a kind of processing method of substrate, solves the problems, such as low production efficiency, ceramic whole plate is provided with several squares
The quartz crystal pedestal of battle array arrangement, is connected between each pedestal, and the vertex of adjacent each pedestal connection is provided with through hole 17, the base
The seat back side is provided with four electrodes, and the electrode between adjacent susceptors is connected with each other by electrode connecting line 19, as shown in Figure 1-2.
First, Quartz crystal resonant part is processed on each pedestal, then with whole plate cover plate Laser seal welding, forms whole plate quartz
Crystal resonator, last whole plate sliver form single resonator.Sliver principle is：Before ceramic whole plate sintering, cutting knife is utilized
The front of cutting-up ceramics whole plate, after the sintering, the front of ceramic whole plate, which is formed, splits printed line；Plate is not split at the ceramic whole plate back side
Line, cutting ceramic by laser back is recycled after whole plate resonator is machined.
Because Light deformation can occur for the positive printed line that splits after sintering, so no matter the laser cut line of ceramic back positions
How high precision is, is all difficult to align with the positive printed line 18 that splits of ceramic wafer, causes the edge of the single resonator of sliver formation easily to go out
The problems such as existing burr, hypotenuse, damage.
If before ceramic whole plate sintering, using the cutting knife of upper and lower close alignment simultaneously to the bottom surface and front of ceramic whole plate
Cutting-up is carried out, twice is formed and symmetrically splits printed line, due to splitting the electrode connecting line connection between each pedestal of printed line disconnection, post-production stone
English crystal resonant part can not realize plating.
If after the processing of Quartz crystal resonant part is completed, then cut the positive back side and split printed line, then due to ceramic whole plate
Sintering is completed, and hardness is very big, it is impossible to uses common cutting knife grooving, it is necessary to which, using laser line-drawing, laser line-drawing is difficult to ensure that
The symmetry on lower two sides, the resonator after sliver still be present and the problems such as burr, hypotenuse, damage occur.
The content of the invention
The present invention is directed to above-mentioned the deficiencies in the prior art, there is provided the whole plate that a kind of surface is smooth, production efficiency is high
SMD quartz crystal resonator board structure.
The technical scheme that the present invention solves above-mentioned technical problem is as follows：A kind of whole plate SMD quartz crystal resonator substrate knot
Structure, including ceramic whole plate, include multiple quartz crystal pedestals arranged in arrays in the ceramic whole plate, each quartz-crystal
The front of susceptor body is provided with circular metalized coating, and the interior left side of ring, which is provided with, is used for chip dispensing platform A and B for dispensing glue, right in ring
Side is provided with the support platform for being used for supporting chip, and the back side is provided with four electrodes, the circular metalized coating, dispensing platform A and B
And connection is turned between four electrodes,
The through hole of perfusion conductive material is opened on the pedestal, the through hole includes first through hole, the second through hole, the 3rd
Through hole and fourth hole, four electrodes are respectively first electrode, second electrode, the 3rd electrode and the 4th electrode, the ring
Shape it is metalized coated by the second through hole, fourth hole irrigate conductive material respectively with the second electrode diagonally set and the 4th
Electrode conduction connects；
The ceramic whole plate includes upper strata ceramic substrate and lower floor's ceramic substrate, and adjacent four quartz crystal pedestals are handed over
Through hole is provided with meeting point, the through hole includes the top through hole being arranged on the ceramic substrate of upper strata and is arranged on lower floor's pottery
Bottom through hole on porcelain substrate, the inwall of the bottom through hole are provided with metal coating, and the electrode between adjacent susceptors passes through gold
Belong to the metal coating conducting connection of line and through hole inwall；
It is equipped with the upper strata ceramic substrate and lower floor's ceramic substrate and splits printed line, the printed line that splits is arranged in arrays, and
Through the center of circle of the through hole.
The beneficial effect of SMD quartz crystal resonator board structure is：The ceramic whole plate, is directly used in resonator and produced
Journey, it is not necessary to which single transfer occupies little space in frock, and production efficiency is high, and production cost is low, the front of ceramic whole plate and the back of the body
Face, which is equipped with, splits printed line, overleaf draws after splitting printed line, because the metal coating on through hole inwall can not remove completely, each pedestal
Between electrode still connection can be turned on by metal coating on metal wire and through hole inwall, in last plate shape of splitting into single
, it is necessary to be initially switched off the metal wire of connection electrode and metal coating before resonator, after cut-out, first electrode and the 3rd electrode lead to
Crossing first through hole and third through-hole can still turn on dispensing platform, and second electrode and the 4th electrode pass through the second through hole and
Four through holes are turned on the circular metalized coating, and etching can still be finely tuned by splitting the single resonator formed after plate, so whole
In plate resonator processing technology, ceramic substrate two sides can be drawn simultaneously splits printed line, and the equal cutting-up in two sides, which splits printed line, to be easy to follow-up split plate
Technique, it is good to split the single resonator surface effect formed after plate.
Further, the depth for splitting printed line is less than the half of lower floor's ceramic substrate thickness.
Further, the conductive material that the dispensing platform A, dispensing platform B are irrigated by third through-hole, first through hole respectively
It is connected with the first electrode that diagonally sets, the 3rd electrode conduction.
Further, the dispensing platform A is connected to the third through-hole by metal connecting line.
Further, the ceramic substrate uses alumina material.
Further, dispensing the platform A and B, metal connecting line and electrode use tungsten.
The invention further relates to a kind of processing method of above-mentioned whole plate SMD quartz crystal resonator board structure, technical scheme
It is as follows：A kind of processing method of whole plate SMD quartz crystal resonator board structure,
1), prepare or ceramic substrate is provided, using two-layer ceramic substrate, respectively upper strata ceramic substrate and lower floor's ceramic base
Plate；
2), punching, through hole and through hole are rushed on ceramic substrate, on upper strata ceramic substrate and lower floor's ceramic substrate respectively
Through hole arranged in arrays is rushed, forms several quartz crystal pedestals arranged in arrays, the through hole includes setting
Top through hole and the bottom through hole that is arranged on lower floor's ceramic substrate on layer ceramic substrate；
3) metalized, is carried out to bottom through hole, makes its inwall adhesion metal coating, the inwall of top through hole does not have
There is metal coating；
4), metallization printing, on upper strata, ceramic substrate and lower floor's ceramic substrate carry out metallization printing, including endless metal
Change the printing of coating, electrode, dispensing platform A and B metal level and support platform, make electrode and dispensing platform A and B and annular gold
Connection is turned between categoryization coating；
5), laminate layer, solid is printed between upper strata ceramic substrate and lower floor's ceramic substrate, makes upper strata ceramic substrate with
Layer ceramic substrate overlaps together, and forms ceramic whole plate；
6), draw and split printed line, the printed line that splits arranged in arrays is cut in the front and back of ceramic whole plate, it is described to split printed line
Pass through the center of circle of through hole；
7) ceramic whole plate is sintered；
8) electroless nickel layer and layer gold on second layer metal layer, the electronickelling on second layer metal tungsten, then plating is golden.
The beneficial effect of processing method is in the present invention：Production process directly uses ceramic whole plate transmission, it is not necessary to single
Transfer occupies little space in frock, and production efficiency is higher, and the front and back of ceramic whole plate, which is equipped with, splits printed line, overleaf
Draw after splitting printed line, because the metal coating on through hole inwall can not remove completely, the electrode between each pedestal can still pass through
Metal coating conducting connection on metal wire and through hole inwall, is solved in whole plate resonator processing technology, it is impossible in ceramics
Substrate two sides is drawn the problem of splitting printed line simultaneously, the equal cutting-up in two sides split printed line be easy to it is follow-up split plate technique, split the list formed after plate
Individual resonator surface effect is good.
Further, in step 1), when preparing ceramic substrate, first raw material are smashed, then flow casting molding obtains ceramic wafer,
Then ceramic wafer is cut to obtain ceramic whole plate, finally frame is inlayed in the periphery of ceramic substrate, in order to base in subsequent technique
The fixation of plate.
Further, in step 2), when rushing through hole, first through hole, the second through hole, third through-hole and the 4th are beaten on each pedestal
Through hole, wherein first through hole and third through-hole are in the diagonal position of each pedestal, pair of the second through hole and fourth hole in each pedestal
Angle Position.
Further, in step 4), metallization printing, metallized respectively printing in the front and back of ceramic substrate,
First layer metal is printed in the position of circular metalized coating, dispensing platform A and B, support platform, four electrodes
Layer, the first layer metal layer is tungsten；
After the drying of first layer metal layer, then on dispensing platform A and B and the first layer metal layer of support platform opening position
Second layer metal layer is printed, the second layer metal layer is tungsten.
Further, in step 6), draw and split printed line, using cutting knife symmetrical above and below, once form twice symmetrical above and below and split
Printed line.
Further, in step 4), the step of metallizing after printing, in addition to smoothing techniques carried out to metal level.
Further, in step 6), after the cutting of printed line is split in completion, the frame inlayed in step 1) can be removed.
Brief description of the drawings
Fig. 1 is the positive structure schematic of the ceramic whole plate in part in the prior art；
Fig. 2 is the structure schematic diagram of the ceramic whole plate in part in the prior art；
Fig. 3 is the structure schematic diagram of pedestal in the present invention；
Fig. 4 is the positive structure schematic of pedestal in the present invention；
Fig. 5 is the positive structure schematic of the ceramic whole plate in part in the present invention；
Fig. 6 is the structure schematic diagram of the ceramic whole plate in part in the present invention；
Fig. 7 is the positive structure schematic of ceramic whole plate in the present invention；
Fig. 8 is the structure schematic diagram of ceramic whole plate in the present invention；
Fig. 9 is the positive structure schematic of the single traditional ceramic whole plate of processing；
Figure 10 is the structure schematic diagram of the single traditional ceramic whole plate of processing；
Figure 11 is that the state for turning on connection in the ceramic whole plate of single traditional processing between cut-out adjacent susceptors electrode is shown
It is intended to；
Figure 12 is that the state of cut-out metal wire in the present invention is schematic diagram；
In the accompanying drawings, the list of designations represented by each label is as follows：1st, first through hole, the 2, second through hole, the 3, the 3rd
Through hole, 4, fourth hole, 5, first electrode, 6, second electrode, the 7, the 3rd electrode, the 8, the 4th electrode, 9, lower floor's ceramic substrate,
10th, metal coating, 11, upper strata ceramic substrate, 12, dispensing platform A, 13, dispensing platform B, 14, circular metalized coating, 15, gold
Belong to line, 16, support platform, 17, through hole, 18, split printed line, 19, electrode connecting line, 20, metal wire, 21, line of cut.
Embodiment
The principle and feature of the present invention are described below in conjunction with accompanying drawing, the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the present invention.
The board structure of existing whole plate SMD quartz crystal resonator as shown in Figure 1-2, including ceramic whole plate, the pottery
Porcelain whole plate is provided with multiple quartz crystal pedestals arranged in arrays, and the front of each quartz crystal pedestal is provided with annular gold
Categoryization coating, the interior left side of ring, which is provided with, is used for chip dispensing platform A and B for dispensing glue, and right side is provided with the branch for being used to support chip in ring
Platform is supportted, the back side is provided with four electrodes, the company of conducting between the circular metalized coating, dispensing platform A and B and four electrode
Connect, connected between the electrode of adjacent susceptors by electrode connecting line 19, the front of the ceramic whole plate is provided with arranged in arrays split
Printed line 18, printed line is not split at the back side, when later-stage utilization is cut by laser, splits printed line 18 due to positive after sintering, it may occur that micro-
Deformation, no matter how high positioning precision is, is all difficult to split printed line alignment with what is formed early stage, needs to split whole plate after laser cutting
Piece, easily there is the problems such as burr, hypotenuse, damage in the edge of the single resonator of formation, if the back side of ceramic whole plate, which draws to have, splits plate
Line 18, then the electrode connecting line 19 between each pedestal is cut-off, and each pedestal no longer mutual conduction, follow-up electroplating technology can not be once
Property complete the plating of all crystal resonant parts, single can only electroplate, production efficiency substantially reduces.
Technical scheme is as shown in Fig. 3-Fig. 8, a kind of whole plate SMD quartz crystal resonator board structure, including
Ceramic whole plate, include multiple quartz crystal pedestals arranged in arrays in the ceramic whole plate, each quartz crystal pedestal
Front be provided with circular metalized coating 14, left side, which is provided with, in the circular metalized coating is used for chip dispensing platform for dispensing glue
A12 and dispensing platform B13, the interior right side of ring are provided with the support platform 16 for being used for supporting chip, and the back side is provided with four electrodes, the ring
Shape is metalized coated 14, turns on connection between dispensing platform A12 and B13 and four electrode；
The through hole of perfusion conductive material is opened on the pedestal, the through hole includes first through hole 1, the second through hole 2, the
Three through holes 3 and fourth hole 4, four electrodes are respectively first electrode 5, second electrode 6, the 3rd electrode 7 and the 4th electrode
8, the conductive material that the circular metalized coating 14 is irrigated by the second through hole 2, fourth hole 4 respectively with diagonally set the
Two electrodes 6 and the conducting connection of the 4th electrode 8；
The ceramic whole plate includes upper strata ceramic substrate 11 and lower floor's ceramic substrate 9, adjacent four quartz crystal bases
Through hole 17 is provided with seat joint, the through hole 17 includes the top through hole being arranged on upper strata ceramic substrate 11 and set
The bottom through hole on lower floor's ceramic substrate 9 is put, the inwall of the bottom through hole is provided with metal coating 10, the through hole
17 make to turn on connection between the electrode on adjacent quartz crystal pedestal by metal coating 10 and metal wire 20.
Top through hole inwall is not provided with metal coating 10, if top through hole inwall also is provided with metal coating, welding electricity
During the plate of road, scolding tin can cover the metal coating on resonator electrode and the inwall of through hole 17, due at the top of the through hole of top with it is humorous
Device cover plate distance of shaking is near, and bottom disconnects the disconnection seam also very little, then because resonator cover plate passes through the second through hole 2 of metal wire 20
Connect with resonator grounding electrode (i.e. the electrode 8 of second electrode 6 and the 4th) with fourth hole 4, surveyed in the case where powering up (200V) respectively
Try insulaion resistance between earth polar and resonator electrode when, in resonator cover plate, metal coating and resonator electrode (first
Electrode and the 3rd electrode) between, because its too small insulaion resistance of total backlash does not reach the standard in 500M Europe, even result in resonator
Electrode (first electrode and the 3rd electrode) and earthing pole short circuit.
It is equipped with the upper strata ceramic substrate 11 and lower floor's ceramic substrate 9 and splits printed line 18, the printed line 18 that splits is in matrix
Arrangement, and pass through the center of circle of the through hole 17.
Ceramic whole plate can use the materials such as alumina material；
The conductive material that the dispensing platform A12, dispensing platform B13 are irrigated by third through-hole 3, first through hole 1 respectively
With diagonally set first electrode 5, the 3rd electrode 7 conducting connect.
The dispensing platform A12 is connected to the third through-hole 3 by metal connecting line 15.
The invention further relates to a kind of processing method of the board structure of whole plate SMD quartz crystal resonator, specific steps are such as
Under：
1), prepare or ceramic substrate is provided, using two-layer ceramic substrate, respectively upper strata ceramic substrate and lower floor's ceramic base
Plate, first raw material are smashed, then flow casting molding obtains ceramic wafer, then cuts to obtain ceramic whole plate by ceramic wafer, finally exists
Frame is inlayed in the periphery of ceramic substrate, in order to the fixation of substrate in subsequent technique；
2), punching, through hole and through hole 17 are rushed on ceramic substrate, ceramic substrate 11 and lower floor's ceramic substrate 9 on upper strata
On rush through hole and through hole 17, rushed on the upper strata ceramic substrate 11 and lower floor's ceramic substrate 9 of consistency from top to bottom arranged in arrays
Through hole 17, the through hole 17 include the top through hole on setting upper strata ceramic substrate 11 and are arranged on lower floor's ceramic substrate
Bottom through hole on 9, when rushing through hole, it is logical to beat first through hole 1, second respectively for the diagonal position of each pedestal on ceramic substrate
Hole 2, third through-hole 3 and fourth hole 4, wherein first through hole 1 and third through-hole 3 are in diagonal position, the second through hole 2 and four-way
Hole 4 is in diagonal position；
3) metalized, is carried out to through hole 17, makes its inwall adhesion metal coating 10, the bottom through hole it is interior
Wall adhesion metal coating 10, the inwall of top through hole do not have metal coating 10；
4), metallization printing, metallization printing is carried out in the front 11 of ceramic substrate and the back side 9, including circular metalized
The printing of coating 14, electrode, dispensing platform A12 and B13 metal level and support platform 16, in circular metalized coating 14, point
16, four glue platform A12 and B13, support platform electrodes position printing first layer metal layer, make electrode and dispensing platform A and B
And circular metalized coating passes through through hole and the conducting connection of metal connecting line 15；
After the drying of first layer metal layer, the first layer metal layer is tungsten, then in dispensing platform A and B and support
Second layer metal layer is printed on first layer metal layer at position of platform, the second layer metal layer is tungsten；
Finally, smoothing techniques are carried out to metal level.
5) laminate layer, solid (such as glue) is printed between upper strata ceramic substrate and lower floor's ceramic substrate, makes upper strata ceramic
Substrate and lower floor's ceramic substrate overlap together.
6), draw and split printed line, the front and back of ceramic whole plate cut it is arranged in arrays split printed line 18, it is described to split plate
Line 18 is drawn when splitting printed line 18, using cutting knife symmetrical above and below, once forms twice symmetrical above and below by the center of circle of through hole 17
Printed line 18 is split, the depth for splitting printed line 18 is less than the thickness of the metal coating 10, after what is overleaf formed splits printed line, adjacent susceptors
Metal coating 10 and metal wire 20 can be still leaned on to turn between Top electrode；
7) ceramic whole plate is sintered；
8) electroless nickel layer and layer gold on second layer metal layer.
When above-mentioned kind of whole plate SMD quartz crystal resonator board structure is used to produce resonator, in addition to：Chip is entered
Row screening, cleaning, plated film；Chip after plated film is put into pedestal whole plate in each pedestal, dispensing, solidification is carried out, then cuts off
Metal wire between metal wire 20 on each pedestal, i.e. electrode and metal coating 10, then, the metal wire on each pedestal is cut off,
As shown in figure 12, metal wire 20 is cut off, after, dispensing platform A12 and B13 can be respectively by irrigating the third through-hole of metal material
3 and the conducting connection of first through hole 1, can be to each resonant member etching fine setting in pedestal whole plate；Then package metals cover plate with it is described
Whole plate resonant member, and laser cut metal cover plate is used, plate is finally split, forms single resonator.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc., it should be included in the scope of the protection.
Claims (10)
1. a kind of whole plate SMD quartz crystal resonator board structure, including ceramic whole plate, it is in matrix to include in the ceramic whole plate
Multiple quartz crystal pedestals of arrangement, the front of each quartz crystal pedestal are provided with circular metalized coating, the interior left side of ring
Provided with the support platform for being used for supporting chip is provided with for chip dispensing platform A and B for dispensing glue, the interior right side of ring, the pedestal back side is set
There are four electrodes, connection is turned between the circular metalized coating, dispensing platform A and B and four electrode, its feature exists
In：
The through hole of perfusion conductive material is opened on the pedestal, the through hole includes first through hole, the second through hole, third through-hole
And fourth hole, four electrodes are respectively first electrode, second electrode, the 3rd electrode and the 4th electrode, the annular is golden
Categoryization coating by the second through hole, fourth hole irrigate conductive material respectively with the second electrode diagonally set and the 4th electrode
Conducting connection；
The ceramic whole plate includes upper strata ceramic substrate and lower floor's ceramic substrate, adjacent four quartz crystal pedestal joints
Place is provided with through hole, and the through hole includes the top through hole being arranged on the ceramic substrate of upper strata and is arranged on lower floor's ceramic base
Bottom through hole on plate, the inwall of the bottom through hole are provided with metal coating, and the electrode between adjacent susceptors passes through metal wire
And the metal coating conducting connection of through hole inwall；
It is equipped with the upper strata ceramic substrate and lower floor's ceramic substrate and splits printed line, the printed line that splits is arranged in arrays, and passes through
The center of circle of the through hole.
2. whole plate SMD quartz crystal resonator board structure according to claim 1, it is characterised in that the dispensing is put down
Platform A, dispensing platform B respectively by the conductive material that third through-hole, first through hole irrigate with diagonally set first electrode, the 3rd
Electrode conduction connects.
3. whole plate SMD quartz crystal resonator board structure according to claim 2, it is characterised in that the dispensing is put down
Platform A is connected to the third through-hole by metal connecting line.
4. a kind of processing method of whole plate SMD quartz crystal resonator board structure, it is characterised in that comprise the following steps：
1), prepare or ceramic substrate is provided, using two-layer ceramic substrate, respectively upper strata ceramic substrate and lower floor's ceramic substrate；
2), punching, through hole and through hole are rushed on upper strata ceramic substrate and lower floor's ceramic substrate, ceramic substrate and lower floor on upper strata
Through hole arranged in arrays is rushed on ceramic substrate respectively, the through hole includes setting the top insertion on the ceramic substrate of upper strata
Hole and the bottom through hole being arranged on lower floor's ceramic substrate；
3) metalized, is carried out to bottom through hole, makes its inwall adhesion metal coating；
4), metallization printing, on upper strata, ceramic substrate and lower floor's ceramic substrate carry out metallization printing, including circular metalized painting
The printing of layer, electrode, dispensing platform A and B metal level and support platform, make electrode and dispensing platform A and B and circular metalized
Coating conducting connection, forms several quartz crystal pedestals arranged in arrays；
5) laminate layer, solid is printed between upper strata ceramic substrate and lower floor's ceramic substrate, upper strata ceramic substrate and lower floor is made pottery
Porcelain substrate overlaps together；
6), draw and split printed line, the printed line that splits arranged in arrays is cut in the front and back of ceramic whole plate, the printed line that splits passes through
The center of circle of through hole；
7) ceramic whole plate is sintered；
8) electroless nickel layer and layer gold on second layer metal layer.
5. the processing method of whole plate SMD quartz crystal resonator board structure according to claim 4, it is characterised in that
In step 1), when preparing ceramic substrate, first raw material are smashed, then flow casting molding obtains ceramic wafer, then cuts ceramic wafer
Cut to obtain ceramic whole plate, finally inlay frame in the periphery of ceramic substrate, in order to the fixation of substrate in subsequent technique.
6. the processing method of whole plate SMD quartz crystal resonator board structure according to claim 4, it is characterised in that
In step 2), when rushing through hole, the diagonal position of each pedestal beats first through hole, the second through hole, the 3rd respectively on ceramic substrate
Through hole and fourth hole, wherein first through hole and third through-hole are in diagonal position, and the second through hole and fourth hole are in diagonal position.
7. the processing method of whole plate SMD quartz crystal resonator board structure according to claim 4, it is characterised in that
In step 4), metallization printing, metallized respectively printing in the front and back of ceramic substrate,
First layer metal layer, institute are printed in the position of circular metalized coating, dispensing platform A and B, support platform, four electrodes
It is tungsten to state first layer metal layer；
After the drying of first layer metal layer, then printed on dispensing platform A and B and the first layer metal coating of support platform opening position
Brush second layer metal layer, the second layer metal layer are tungsten.
8. the processing method of whole plate SMD quartz crystal resonator board structure according to claim 4, it is characterised in that
In step 6), draw and split printed line, using cutting knife symmetrical above and below, once form twice symmetrical above and below and split printed line.
9. the processing method of whole plate SMD quartz crystal resonator board structure according to claim 4, it is characterised in that
In step 4), the step of metallizing after printing, in addition to smoothing techniques carried out to metal level.
10. the processing method of whole plate SMD quartz crystal resonator board structure according to claim 4, it is characterised in that
In step 6), after the cutting of printed line is split in completion, the frame inlayed in step 1) can be removed.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710680969.1A CN107517044B (en) | 2017-08-10 | 2017-08-10 | Substrate structure of whole-board SMD quartz crystal resonator and processing method thereof |
| PCT/CN2018/073696 WO2019029132A1 (en) | 2017-08-10 | 2018-01-23 | Smd quartz crystal resonator substrate plate structure and processing method therefor |
| TW107105036A TWI657660B (en) | 2017-08-10 | 2018-02-12 | The substrate structure and processing methods for a type of array surface-mounted crystal unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710680969.1A CN107517044B (en) | 2017-08-10 | 2017-08-10 | Substrate structure of whole-board SMD quartz crystal resonator and processing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107517044A true CN107517044A (en) | 2017-12-26 |
| CN107517044B CN107517044B (en) | 2024-04-09 |
Family
ID=60721961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710680969.1A Active CN107517044B (en) | 2017-08-10 | 2017-08-10 | Substrate structure of whole-board SMD quartz crystal resonator and processing method thereof |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN107517044B (en) |
| TW (1) | TWI657660B (en) |
| WO (1) | WO2019029132A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019029132A1 (en) * | 2017-08-10 | 2019-02-14 | 烟台明德亨电子科技有限公司 | Smd quartz crystal resonator substrate plate structure and processing method therefor |
| CN109585162A (en) * | 2018-12-29 | 2019-04-05 | 广东爱晟电子科技有限公司 | Low stress single layer of chips capacitor and preparation method thereof |
| CN116455343A (en) * | 2023-05-15 | 2023-07-18 | 烟台明德亨电子科技有限公司 | Processing method of ceramic base for crystal oscillator |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004022558A (en) * | 2002-06-12 | 2004-01-22 | Daishinku Corp | Method of manufacturing electronic part, mother board for manufacturing electronic part, electronic part, and intermediate mold thereof |
| CN1960176A (en) * | 2005-11-04 | 2007-05-09 | 铜陵市晶赛电子有限责任公司 | Ceramic base set with quartz-crystal resonator being pasted on surface, and fabricating method |
| CN101847554A (en) * | 2010-06-01 | 2010-09-29 | 四川长虹电器股份有限公司 | Light filter electromagnetic shielding membrane extraction electrode manufacturing method |
| JP2011045112A (en) * | 2010-10-01 | 2011-03-03 | Epson Toyocom Corp | At-cut crystal resonator element, at-cut crystal resonator, and at-cut crystal oscillator |
| CN102355225A (en) * | 2011-08-02 | 2012-02-15 | 台晶(宁波)电子有限公司 | Low-temperature co-fired ceramic entire flat substrate pedestal for quartz crystal resonator |
| CN202750054U (en) * | 2012-09-22 | 2013-02-20 | 烟台森众电子科技有限公司 | Surface mount device (SMD) quartz-crystal resonator base |
| JP2013062712A (en) * | 2011-09-14 | 2013-04-04 | Nippon Dempa Kogyo Co Ltd | Surface-mounted crystal oscillator, and method for manufacturing the same |
| CN103066941A (en) * | 2012-09-22 | 2013-04-24 | 烟台森众电子科技有限公司 | Surface mounted device (SMD) quartz-crystal resonator base and processing method thereof |
| US20150155849A1 (en) * | 2013-11-29 | 2015-06-04 | Nihon Dempa Kogyo Co., Ltd. | Surface mounting quartz crystal unit and method of fabricating the same |
| JP2015139012A (en) * | 2014-01-20 | 2015-07-30 | 日本電波工業株式会社 | Crystal oscillator and method of manufacturing the same |
| CN105305995A (en) * | 2015-11-05 | 2016-02-03 | 烟台大明电子科技有限公司 | Novel SMD (Surface Mount Device) quartz crystal resonator and complete board encapsulation machining process thereof |
| CN106067775A (en) * | 2016-07-06 | 2016-11-02 | 烟台明德亨电子科技有限公司 | Surface patch quartz-crystal resonator produce in sheet devices and method on imposite |
| CN106100604A (en) * | 2016-07-18 | 2016-11-09 | 应达利电子股份有限公司 | Resonator, pedestal, pedestal group and the preparation method of pedestal with capacitance-resistance loop |
| CN106685375A (en) * | 2016-12-15 | 2017-05-17 | 合肥晶威特电子有限责任公司 | SMD quartz crystal resonator base and machining method |
| CN207265990U (en) * | 2017-08-10 | 2018-04-20 | 烟台明德亨电子科技有限公司 | A kind of whole plate SMD quartz crystal resonator board structure |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0809861B1 (en) * | 1995-12-14 | 2005-06-08 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device for surface mounting suitable for comparatively high voltages, and such a semiconductor device |
| US6812503B2 (en) * | 2001-11-29 | 2004-11-02 | Highlink Technology Corporation | Light-emitting device with improved reliability |
| CN102638243A (en) * | 2012-05-07 | 2012-08-15 | 烟台森众电子科技有限公司 | SMD (Surface Mount Device) quartz crystal resonator base and processing method thereof |
| CN107517044B (en) * | 2017-08-10 | 2024-04-09 | 四川明德亨电子科技有限公司 | Substrate structure of whole-board SMD quartz crystal resonator and processing method thereof |
-
2017
- 2017-08-10 CN CN201710680969.1A patent/CN107517044B/en active Active
-
2018
- 2018-01-23 WO PCT/CN2018/073696 patent/WO2019029132A1/en active Application Filing
- 2018-02-12 TW TW107105036A patent/TWI657660B/en active
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004022558A (en) * | 2002-06-12 | 2004-01-22 | Daishinku Corp | Method of manufacturing electronic part, mother board for manufacturing electronic part, electronic part, and intermediate mold thereof |
| CN1960176A (en) * | 2005-11-04 | 2007-05-09 | 铜陵市晶赛电子有限责任公司 | Ceramic base set with quartz-crystal resonator being pasted on surface, and fabricating method |
| CN101847554A (en) * | 2010-06-01 | 2010-09-29 | 四川长虹电器股份有限公司 | Light filter electromagnetic shielding membrane extraction electrode manufacturing method |
| JP2011045112A (en) * | 2010-10-01 | 2011-03-03 | Epson Toyocom Corp | At-cut crystal resonator element, at-cut crystal resonator, and at-cut crystal oscillator |
| CN102355225A (en) * | 2011-08-02 | 2012-02-15 | 台晶(宁波)电子有限公司 | Low-temperature co-fired ceramic entire flat substrate pedestal for quartz crystal resonator |
| JP2013062712A (en) * | 2011-09-14 | 2013-04-04 | Nippon Dempa Kogyo Co Ltd | Surface-mounted crystal oscillator, and method for manufacturing the same |
| CN202750054U (en) * | 2012-09-22 | 2013-02-20 | 烟台森众电子科技有限公司 | Surface mount device (SMD) quartz-crystal resonator base |
| CN103066941A (en) * | 2012-09-22 | 2013-04-24 | 烟台森众电子科技有限公司 | Surface mounted device (SMD) quartz-crystal resonator base and processing method thereof |
| US20150155849A1 (en) * | 2013-11-29 | 2015-06-04 | Nihon Dempa Kogyo Co., Ltd. | Surface mounting quartz crystal unit and method of fabricating the same |
| JP2015139012A (en) * | 2014-01-20 | 2015-07-30 | 日本電波工業株式会社 | Crystal oscillator and method of manufacturing the same |
| CN105305995A (en) * | 2015-11-05 | 2016-02-03 | 烟台大明电子科技有限公司 | Novel SMD (Surface Mount Device) quartz crystal resonator and complete board encapsulation machining process thereof |
| CN106067775A (en) * | 2016-07-06 | 2016-11-02 | 烟台明德亨电子科技有限公司 | Surface patch quartz-crystal resonator produce in sheet devices and method on imposite |
| CN106100604A (en) * | 2016-07-18 | 2016-11-09 | 应达利电子股份有限公司 | Resonator, pedestal, pedestal group and the preparation method of pedestal with capacitance-resistance loop |
| CN106685375A (en) * | 2016-12-15 | 2017-05-17 | 合肥晶威特电子有限责任公司 | SMD quartz crystal resonator base and machining method |
| CN207265990U (en) * | 2017-08-10 | 2018-04-20 | 烟台明德亨电子科技有限公司 | A kind of whole plate SMD quartz crystal resonator board structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019029132A1 (en) * | 2017-08-10 | 2019-02-14 | 烟台明德亨电子科技有限公司 | Smd quartz crystal resonator substrate plate structure and processing method therefor |
| CN109585162A (en) * | 2018-12-29 | 2019-04-05 | 广东爱晟电子科技有限公司 | Low stress single layer of chips capacitor and preparation method thereof |
| CN116455343A (en) * | 2023-05-15 | 2023-07-18 | 烟台明德亨电子科技有限公司 | Processing method of ceramic base for crystal oscillator |
| CN116455343B (en) * | 2023-05-15 | 2024-01-23 | 烟台明德亨电子科技有限公司 | Processing method of ceramic base for crystal oscillator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107517044B (en) | 2024-04-09 |
| TW201911745A (en) | 2019-03-16 |
| TWI657660B (en) | 2019-04-21 |
| WO2019029132A1 (en) | 2019-02-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107517044A (en) | A kind of whole plate SMD quartz crystal resonator board structure and its processing method | |
| CN105244324B (en) | Ceramic insulator used for electronic packaging and preparation method thereof | |
| CN107924877A (en) | High-frequency model and its manufacture method | |
| CN104602452B (en) | A kind of preparation method of circuit board | |
| CN107517043A (en) | A kind of SMD quartz crystal resonator processing method and its resonator | |
| CN207265990U (en) | A kind of whole plate SMD quartz crystal resonator board structure | |
| CN106685375B (en) | SMD quartz crystal resonator base and processing method | |
| CN103066941A (en) | Surface mounted device (SMD) quartz-crystal resonator base and processing method thereof | |
| CN103443916A (en) | Method for producing package substrate for mounting semiconductor element, package substrate for mounting semiconductor element, and semiconductor package | |
| CN209029528U (en) | A kind of Waveguide slot radiating element and array antenna | |
| CN105491818A (en) | Manufacturing method for buried circuit board with high alignment precision | |
| US6242286B1 (en) | Multilayer high density micro circuit module and method of manufacturing same | |
| CN106960882B (en) | A kind of surface metallised ceramic cube and production method | |
| CN105229781B (en) | Use the electro-plating method and electroplated structural of dielectric bridge | |
| CN106604567B (en) | Circuit board and its manufacturing method | |
| CN110536565A (en) | A kind of filling perforation method of wiring board through-hole | |
| CN107808853B (en) | A kind of fingerprint chip-packaging structure and production method, terminal device | |
| CN109661124A (en) | A kind of IC support plate novel surface processing method | |
| CN103441116A (en) | Semiconductor package piece and manufacturing method thereof | |
| CN104037094B (en) | The preparation method of salient point on base plate for packaging | |
| CN209447195U (en) | Bio-identification mould group | |
| CN103545222B (en) | High-reliability soft-medium circuit processing manufacturing method | |
| CN105244385B (en) | Photovoltaic cell and photovoltaic module | |
| CN105480000A (en) | Manufacturing method of gold and silver double-color pattern crystal standing table | |
| CN110265305B (en) | Patch type infrared bracket, production process thereof and infrared receiving head |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20190104 Address after: 646300 No. 3, Lan'an Road, Naxi District, Luzhou City, Sichuan Province Applicant after: Sichuan Mingdeheng Electronic Technology Co.,Ltd. Address before: 264006 No. 6 Heilongjiang Road, Yantai Economic and Technological Development Zone, Shandong Province Applicant before: MDH TECHNOLOGY Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant |