CN107516693A - 一种晶硅太阳能电池抛光片的加工方法 - Google Patents
一种晶硅太阳能电池抛光片的加工方法 Download PDFInfo
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- CN107516693A CN107516693A CN201710585624.8A CN201710585624A CN107516693A CN 107516693 A CN107516693 A CN 107516693A CN 201710585624 A CN201710585624 A CN 201710585624A CN 107516693 A CN107516693 A CN 107516693A
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- silicon wafer
- volume fraction
- processing method
- polished silicon
- solar batteries
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 127
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 127
- 239000010703 silicon Substances 0.000 title claims abstract description 127
- 239000013078 crystal Substances 0.000 title claims abstract description 23
- 238000003672 processing method Methods 0.000 title claims abstract description 22
- 230000007797 corrosion Effects 0.000 claims abstract description 48
- 238000005260 corrosion Methods 0.000 claims abstract description 48
- 238000004140 cleaning Methods 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 35
- 230000008569 process Effects 0.000 claims abstract description 27
- 239000000203 mixture Substances 0.000 claims abstract description 26
- 239000007788 liquid Substances 0.000 claims abstract description 23
- 238000006396 nitration reaction Methods 0.000 claims abstract description 22
- 239000012530 fluid Substances 0.000 claims abstract description 20
- 239000012535 impurity Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 15
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 36
- 229910017604 nitric acid Inorganic materials 0.000 claims description 10
- 230000035484 reaction time Effects 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 8
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 230000002000 scavenging effect Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 19
- 238000012797 qualification Methods 0.000 abstract description 2
- 238000001020 plasma etching Methods 0.000 description 36
- 235000012431 wafers Nutrition 0.000 description 22
- 238000001035 drying Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000006872 improvement Effects 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 239000000376 reactant Substances 0.000 description 6
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910004014 SiF4 Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 229910003638 H2SiF6 Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910004074 SiF6 Inorganic materials 0.000 description 1
- 229910003834 SiFxOy Inorganic materials 0.000 description 1
- 229910020439 SiO2+4HF Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011093 chipboard Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- ZEFWRWWINDLIIV-UHFFFAOYSA-N tetrafluorosilane;dihydrofluoride Chemical compound F.F.F[Si](F)(F)F ZEFWRWWINDLIIV-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710585624.8A CN107516693B (zh) | 2017-07-18 | 2017-07-18 | 一种晶硅太阳能电池抛光片的加工方法 |
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CN201710585624.8A CN107516693B (zh) | 2017-07-18 | 2017-07-18 | 一种晶硅太阳能电池抛光片的加工方法 |
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CN107516693A true CN107516693A (zh) | 2017-12-26 |
CN107516693B CN107516693B (zh) | 2019-11-12 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110061098A (zh) * | 2019-04-28 | 2019-07-26 | 江苏格林保尔光伏有限公司 | 一种干法黑硅电池的制备方法 |
CN111943520A (zh) * | 2020-08-12 | 2020-11-17 | 中国科学院半导体研究所 | 高雾度玻璃衬底、制备方法及薄膜太阳电池 |
CN113808933A (zh) * | 2021-08-30 | 2021-12-17 | 通威太阳能(安徽)有限公司 | 一种电池用硅片制绒方法及由其制备的电池用硅片 |
CN114093984A (zh) * | 2021-11-17 | 2022-02-25 | 横店集团东磁股份有限公司 | 一种提升返工片效率的工艺 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003101051A (ja) * | 2001-09-26 | 2003-04-04 | Kyocera Corp | 太陽電池用基板の粗面化方法 |
CN105449045A (zh) * | 2015-12-29 | 2016-03-30 | 常州比太科技有限公司 | 一种适用于rie制绒后晶体硅片的表面微腐蚀清洗方法 |
CN105655445A (zh) * | 2016-03-25 | 2016-06-08 | 中节能太阳能科技(镇江)有限公司 | 一种rie制绒硅片表面修饰清洗方法 |
CN105951184A (zh) * | 2016-05-12 | 2016-09-21 | 华南师范大学 | 一种金刚线切割多晶硅片的制绒方法 |
-
2017
- 2017-07-18 CN CN201710585624.8A patent/CN107516693B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003101051A (ja) * | 2001-09-26 | 2003-04-04 | Kyocera Corp | 太陽電池用基板の粗面化方法 |
CN105449045A (zh) * | 2015-12-29 | 2016-03-30 | 常州比太科技有限公司 | 一种适用于rie制绒后晶体硅片的表面微腐蚀清洗方法 |
CN105655445A (zh) * | 2016-03-25 | 2016-06-08 | 中节能太阳能科技(镇江)有限公司 | 一种rie制绒硅片表面修饰清洗方法 |
CN105951184A (zh) * | 2016-05-12 | 2016-09-21 | 华南师范大学 | 一种金刚线切割多晶硅片的制绒方法 |
Non-Patent Citations (1)
Title |
---|
陈亮 等: "RIE制绒在多晶高效太阳能电池中的应用分析", 《第十一届中国光伏大会暨展览会会议论文集》 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110061098A (zh) * | 2019-04-28 | 2019-07-26 | 江苏格林保尔光伏有限公司 | 一种干法黑硅电池的制备方法 |
CN111943520A (zh) * | 2020-08-12 | 2020-11-17 | 中国科学院半导体研究所 | 高雾度玻璃衬底、制备方法及薄膜太阳电池 |
CN113808933A (zh) * | 2021-08-30 | 2021-12-17 | 通威太阳能(安徽)有限公司 | 一种电池用硅片制绒方法及由其制备的电池用硅片 |
CN113808933B (zh) * | 2021-08-30 | 2023-12-01 | 通威太阳能(安徽)有限公司 | 一种电池用硅片制绒方法及由其制备的电池用硅片 |
CN114093984A (zh) * | 2021-11-17 | 2022-02-25 | 横店集团东磁股份有限公司 | 一种提升返工片效率的工艺 |
CN114093984B (zh) * | 2021-11-17 | 2023-07-21 | 横店集团东磁股份有限公司 | 一种提升返工片效率的工艺 |
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Address after: 528000 No.3, Qili Avenue South, Leping Town, Sanshui District, Foshan City, Guangdong Province Patentee after: Guangdong aixu Technology Co.,Ltd. Address before: No.69, C District, Sanshui Industrial Park, Foshan, Guangdong 528000 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address after: No.69, C District, Sanshui Industrial Park, Foshan, Guangdong 528000 Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong. Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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