CN105449045A - 一种适用于rie制绒后晶体硅片的表面微腐蚀清洗方法 - Google Patents
一种适用于rie制绒后晶体硅片的表面微腐蚀清洗方法 Download PDFInfo
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- CN105449045A CN105449045A CN201511022694.XA CN201511022694A CN105449045A CN 105449045 A CN105449045 A CN 105449045A CN 201511022694 A CN201511022694 A CN 201511022694A CN 105449045 A CN105449045 A CN 105449045A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 142
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 142
- 239000010703 silicon Substances 0.000 title claims abstract description 142
- 238000004140 cleaning Methods 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000013078 crystal Substances 0.000 title claims abstract description 43
- 238000001020 plasma etching Methods 0.000 title abstract description 77
- 238000005260 corrosion Methods 0.000 title abstract description 10
- 230000007797 corrosion Effects 0.000 title abstract description 10
- 239000000243 solution Substances 0.000 claims abstract description 63
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 49
- 238000005530 etching Methods 0.000 claims abstract description 38
- 239000011259 mixed solution Substances 0.000 claims abstract description 18
- 235000008216 herbs Nutrition 0.000 claims description 64
- 210000002268 wool Anatomy 0.000 claims description 64
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 62
- 230000002000 scavenging effect Effects 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000002310 reflectometry Methods 0.000 abstract description 6
- 230000001174 ascending effect Effects 0.000 abstract 1
- 239000008367 deionised water Substances 0.000 description 21
- 239000007788 liquid Substances 0.000 description 18
- 238000000605 extraction Methods 0.000 description 8
- 239000006210 lotion Substances 0.000 description 7
- 238000005406 washing Methods 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 239000012153 distilled water Substances 0.000 description 4
- 229910021642 ultra pure water Inorganic materials 0.000 description 4
- 239000012498 ultrapure water Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
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CN201511022694.XA CN105449045B (zh) | 2015-12-29 | 2015-12-29 | 一种适用于rie制绒后晶体硅片的表面微腐蚀清洗方法 |
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CN201511022694.XA CN105449045B (zh) | 2015-12-29 | 2015-12-29 | 一种适用于rie制绒后晶体硅片的表面微腐蚀清洗方法 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105870263A (zh) * | 2016-06-27 | 2016-08-17 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池绒面结构的制备方法 |
CN107516693A (zh) * | 2017-07-18 | 2017-12-26 | 广东爱康太阳能科技有限公司 | 一种晶硅太阳能电池抛光片的加工方法 |
CN107623056A (zh) * | 2017-09-29 | 2018-01-23 | 常州大学 | 一种反应离子刻蚀方法形成的纳米绒面表面缺陷修复方法 |
CN108231540A (zh) * | 2017-12-20 | 2018-06-29 | 横店集团东磁股份有限公司 | 一种应用于太阳能电池制绒的后清洗工艺 |
CN111048628A (zh) * | 2019-12-27 | 2020-04-21 | 天津爱旭太阳能科技有限公司 | 一种p型单晶硅片的制备方法 |
CN111180550A (zh) * | 2019-12-27 | 2020-05-19 | 天津爱旭太阳能科技有限公司 | 一种n型单晶硅片的制备方法 |
CN111933745A (zh) * | 2020-06-28 | 2020-11-13 | 泰州中来光电科技有限公司 | 一种基于反应离子刻蚀的黑硅钝化接触电池的制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101211773A (zh) * | 2006-12-30 | 2008-07-02 | 上海先进半导体制造股份有限公司 | 防止芯片背面金属剥落的方法 |
CN102312239A (zh) * | 2011-08-23 | 2012-01-11 | 晶澳太阳能有限公司 | 一种对硅片表面的硅浆进行腐蚀的化学腐蚀液及其腐蚀方法 |
CN103013711A (zh) * | 2013-01-15 | 2013-04-03 | 常州比太科技有限公司 | 一种去除晶体硅片金属离子污染的清洗液及其清洗工艺 |
CN103700733A (zh) * | 2014-01-16 | 2014-04-02 | 常州天合光能有限公司 | 太阳能电池的n型晶体硅衬底的清洗处理方法 |
CN105047734A (zh) * | 2015-08-27 | 2015-11-11 | 江苏辉伦太阳能科技有限公司 | 一种多晶硅表面倒金字塔结构及其制备方法 |
-
2015
- 2015-12-29 CN CN201511022694.XA patent/CN105449045B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101211773A (zh) * | 2006-12-30 | 2008-07-02 | 上海先进半导体制造股份有限公司 | 防止芯片背面金属剥落的方法 |
CN102312239A (zh) * | 2011-08-23 | 2012-01-11 | 晶澳太阳能有限公司 | 一种对硅片表面的硅浆进行腐蚀的化学腐蚀液及其腐蚀方法 |
CN103013711A (zh) * | 2013-01-15 | 2013-04-03 | 常州比太科技有限公司 | 一种去除晶体硅片金属离子污染的清洗液及其清洗工艺 |
CN103700733A (zh) * | 2014-01-16 | 2014-04-02 | 常州天合光能有限公司 | 太阳能电池的n型晶体硅衬底的清洗处理方法 |
CN105047734A (zh) * | 2015-08-27 | 2015-11-11 | 江苏辉伦太阳能科技有限公司 | 一种多晶硅表面倒金字塔结构及其制备方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105870263A (zh) * | 2016-06-27 | 2016-08-17 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池绒面结构的制备方法 |
CN107516693A (zh) * | 2017-07-18 | 2017-12-26 | 广东爱康太阳能科技有限公司 | 一种晶硅太阳能电池抛光片的加工方法 |
CN107516693B (zh) * | 2017-07-18 | 2019-11-12 | 广东爱康太阳能科技有限公司 | 一种晶硅太阳能电池抛光片的加工方法 |
CN107623056A (zh) * | 2017-09-29 | 2018-01-23 | 常州大学 | 一种反应离子刻蚀方法形成的纳米绒面表面缺陷修复方法 |
CN108231540A (zh) * | 2017-12-20 | 2018-06-29 | 横店集团东磁股份有限公司 | 一种应用于太阳能电池制绒的后清洗工艺 |
CN111048628A (zh) * | 2019-12-27 | 2020-04-21 | 天津爱旭太阳能科技有限公司 | 一种p型单晶硅片的制备方法 |
CN111180550A (zh) * | 2019-12-27 | 2020-05-19 | 天津爱旭太阳能科技有限公司 | 一种n型单晶硅片的制备方法 |
CN111933745A (zh) * | 2020-06-28 | 2020-11-13 | 泰州中来光电科技有限公司 | 一种基于反应离子刻蚀的黑硅钝化接触电池的制备方法 |
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