CN107493443B - 成像传感器、成像系统和移动体 - Google Patents

成像传感器、成像系统和移动体 Download PDF

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Publication number
CN107493443B
CN107493443B CN201710432768.XA CN201710432768A CN107493443B CN 107493443 B CN107493443 B CN 107493443B CN 201710432768 A CN201710432768 A CN 201710432768A CN 107493443 B CN107493443 B CN 107493443B
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China
Prior art keywords
signal
accumulation period
unit
signal corresponding
amplification factor
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Chinese (zh)
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CN107493443A (zh
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武藤隆
大田康晴
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Canon Inc
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Canon Inc
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/53Control of the integration time
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/53Control of the integration time
    • H04N25/532Control of the integration time by controlling global shutters in CMOS SSIS
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/57Control of the dynamic range
    • H04N25/58Control of the dynamic range involving two or more exposures
    • H04N25/587Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H04N25/589Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields with different integration times, e.g. short and long exposures
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06VIMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V20/00Scenes; Scene-specific elements
    • G06V20/50Context or environment of the image
    • G06V20/56Context or environment of the image exterior to a vehicle by using sensors mounted on the vehicle

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201710432768.XA 2016-06-10 2017-06-09 成像传感器、成像系统和移动体 Active CN107493443B (zh)

Applications Claiming Priority (2)

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JP2016-116559 2016-06-10
JP2016116559A JP6797568B2 (ja) 2016-06-10 2016-06-10 撮像装置、撮像システム

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CN107493443A CN107493443A (zh) 2017-12-19
CN107493443B true CN107493443B (zh) 2020-12-25

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JP (1) JP6797568B2 (enExample)
CN (1) CN107493443B (enExample)

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JP7299680B2 (ja) * 2018-08-23 2023-06-28 キヤノン株式会社 撮像装置及び撮像システム
WO2020139505A2 (en) 2018-12-26 2020-07-02 Apple Inc. Optical-fingerprint detection system
US11503234B2 (en) * 2019-02-27 2022-11-15 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, radioactive ray imaging system, and movable object
US11606525B1 (en) * 2020-06-03 2023-03-14 Gigajot Technology, Inc. Sub-ranging programmable gain amplifier

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CN1897639A (zh) * 2005-07-15 2007-01-17 三星电子株式会社 对于总体快门操作具有共享电压转换器的图像传感器
CN102685516A (zh) * 2011-03-07 2012-09-19 李慧盈 立体视觉主动安全辅助驾驶方法
US8786745B2 (en) * 2010-02-05 2014-07-22 National University Corporation Shizuoka University Solid-state image pickup device

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JP4031706B2 (ja) * 2000-11-27 2008-01-09 ビジョン−サイエンシズ・インコーポレイテッド 解像度がプログラム可能なcmosイメージ・センサ
JP3827145B2 (ja) * 2001-07-03 2006-09-27 ソニー株式会社 固体撮像装置
US20030038542A1 (en) * 2001-08-27 2003-02-27 Henri Duong Automatic braking system equipped in automobiles, cars, trucks..
JP3988189B2 (ja) * 2002-11-20 2007-10-10 ソニー株式会社 固体撮像装置
JP4311181B2 (ja) * 2003-12-05 2009-08-12 ソニー株式会社 半導体装置の制御方法および信号処理方法並びに半導体装置および電子機器
JP4416668B2 (ja) * 2005-01-14 2010-02-17 キヤノン株式会社 固体撮像装置、その制御方法及びカメラ
US7825969B2 (en) * 2006-12-15 2010-11-02 Nokia Corporation Image stabilization using multi-exposure pattern
JP4609428B2 (ja) * 2006-12-27 2011-01-12 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および撮像装置
JP5106052B2 (ja) * 2007-11-08 2012-12-26 キヤノン株式会社 固体撮像素子、撮像システム、及び固体撮像素子の駆動方法
JP2009284181A (ja) 2008-05-21 2009-12-03 Yamaha Corp 固体撮像装置
JP5188292B2 (ja) * 2008-06-30 2013-04-24 キヤノン株式会社 撮像システムおよび撮像システムの駆動方法
JP2010187317A (ja) * 2009-02-13 2010-08-26 Panasonic Corp 固体撮像装置及び撮像装置
JP5419660B2 (ja) 2009-12-04 2014-02-19 キヤノン株式会社 撮像装置及びその駆動方法
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US8786745B2 (en) * 2010-02-05 2014-07-22 National University Corporation Shizuoka University Solid-state image pickup device
CN102685516A (zh) * 2011-03-07 2012-09-19 李慧盈 立体视觉主动安全辅助驾驶方法

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JP6797568B2 (ja) 2020-12-09
US10158816B2 (en) 2018-12-18
US20190089917A1 (en) 2019-03-21
US10785433B2 (en) 2020-09-22
JP2017220911A (ja) 2017-12-14
CN107493443A (zh) 2017-12-19
US20170359540A1 (en) 2017-12-14

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