CN107431089A - 隧穿晶体管及隧穿晶体管的制备方法 - Google Patents
隧穿晶体管及隧穿晶体管的制备方法 Download PDFInfo
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- CN107431089A CN107431089A CN201580077845.3A CN201580077845A CN107431089A CN 107431089 A CN107431089 A CN 107431089A CN 201580077845 A CN201580077845 A CN 201580077845A CN 107431089 A CN107431089 A CN 107431089A
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- 230000005641 tunneling Effects 0.000 title claims abstract description 148
- 238000002360 preparation method Methods 0.000 title claims abstract description 31
- 125000001475 halogen functional group Chemical group 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 150000002500 ions Chemical class 0.000 claims description 131
- 239000000463 material Substances 0.000 claims description 43
- 238000002347 injection Methods 0.000 claims description 38
- 239000007924 injection Substances 0.000 claims description 38
- 230000000903 blocking effect Effects 0.000 claims description 33
- 239000007943 implant Substances 0.000 claims description 29
- -1 boron ion Chemical class 0.000 claims description 22
- 229910021332 silicide Inorganic materials 0.000 claims description 17
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052796 boron Inorganic materials 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 229910001449 indium ion Inorganic materials 0.000 claims description 9
- 229910001439 antimony ion Inorganic materials 0.000 claims description 8
- 230000007246 mechanism Effects 0.000 abstract description 9
- 238000000034 method Methods 0.000 description 40
- 230000008569 process Effects 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- 230000005684 electric field Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000002210 silicon-based material Substances 0.000 description 11
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 9
- 238000001465 metallisation Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000005224 laser annealing Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000000137 annealing Methods 0.000 description 7
- 238000011049 filling Methods 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 230000008439 repair process Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
提供了一种隧穿晶体管及隧穿晶体管的制备方法，其中，一种隧穿晶体管，包括衬底(10)、第一源极区域(50)、漏极区域(60)、第二源极区域(80)、沟道(90)、晕环层(100)、栅介质层(20)及栅极区域(30)，所述第一源极区域(50)及所述漏极区域(60)形成于所述衬底(10)之上，所述第二源极区域(80)形成于所述第一源极区域(50)及所述漏极区域(60)之间，使得所述第二源极区域(80)与所述漏极区域(60)之间形成沟道(90)，所述晕环层(100)形成于所述第二源极区域(80)的部分表面之上，所述栅介质层(20)及所述栅极区域(30)依次形成于所述晕环层(100)之上。还提供一种隧穿晶体管的制作方法。采用线隧穿机制提高了隧穿晶体管的隧穿几率，进而增大了隧穿晶体管的隧穿电流。
Description
PCT国内申请，说明书已公开。
Claims (17)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2015/077139 WO2016168994A1 (zh) | 2015-04-22 | 2015-04-22 | 隧穿晶体管及隧穿晶体管的制备方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107431089A true CN107431089A (zh) | 2017-12-01 |
| CN107431089B CN107431089B (zh) | 2021-03-30 |
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ID=57142809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580077845.3A Active CN107431089B (zh) | 2015-04-22 | 2015-04-22 | 隧穿晶体管及隧穿晶体管的制备方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107431089B (zh) |
| WO (1) | WO2016168994A1 (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180138307A1 (en) * | 2016-11-17 | 2018-05-17 | Globalfoundries Inc. | Tunnel finfet with self-aligned gate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339753A (zh) * | 2010-07-16 | 2012-02-01 | 中国科学院微电子研究所 | 一种隧穿晶体管结构及其制造方法 |
| US20120228706A1 (en) * | 2011-03-09 | 2012-09-13 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN104201198A (zh) * | 2014-08-01 | 2014-12-10 | 华为技术有限公司 | 隧穿晶体管结构及其制造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2773487B2 (ja) * | 1991-10-15 | 1998-07-09 | 日本電気株式会社 | トンネルトランジスタ |
| CN1176493C (zh) * | 2002-06-28 | 2004-11-17 | 清华大学 | 快闪存储单元及其制造方法 |
| CN102610647B (zh) * | 2012-03-14 | 2015-04-15 | 清华大学 | 具有异质栅介质的隧穿晶体管及其形成方法 |
-
2015
- 2015-04-22 WO PCT/CN2015/077139 patent/WO2016168994A1/zh active Application Filing
- 2015-04-22 CN CN201580077845.3A patent/CN107431089B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339753A (zh) * | 2010-07-16 | 2012-02-01 | 中国科学院微电子研究所 | 一种隧穿晶体管结构及其制造方法 |
| US20120228706A1 (en) * | 2011-03-09 | 2012-09-13 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN104201198A (zh) * | 2014-08-01 | 2014-12-10 | 华为技术有限公司 | 隧穿晶体管结构及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107431089B (zh) | 2021-03-30 |
| WO2016168994A1 (zh) | 2016-10-27 |
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