CN107403770B - 电子结构以及电子结构阵列 - Google Patents
电子结构以及电子结构阵列 Download PDFInfo
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Abstract
一种电子结构以及电子结构阵列,该电子结构包括重布线路结构、第一支撑结构、第二支撑结构、多个第一接合凸部、多个第二接合凸部、第一封胶以及第二封胶。第一支撑结构具有第一开口,配置于重布线路结构的第一面上。第二支撑结构具有第二开口,配置于重布线路结构相对于第一面的第二面上。第一接合凸部配置于重布线路结构的第一面上,且位于第一开口中。第二接合凸部配置于重布线路结构的第二面上,且位于第二开口中。第一封胶填充于第一开口与第一接合凸部之间。第二封胶填充于第二开口与第二接合凸部之间。本发明能提升结构强度且降低其制程的生产成本。
Description
技术领域
本发明是有关于一种电子结构,且特别是有关于一种应用于晶片封装领域的电子结构以及电子结构阵列。
背景技术
在半导体封装技术领域中,晶片载体(chip carrier)是一种用以将集成电路晶片(IC chip)连接至下一层级的电子元件,例如主机板或模组板等。具有高布线密度的线路基板(circuit board)经常作为高接点数的晶片载体。线路基板主要由多个图案化导体层(patterned conductive layer)及多个介电层(dielectric layer)交替叠合而成,而两图案化导体层之间可通过导体孔(conductive via)来彼此电性连接。然而在现今的线路基板以及晶片封装制程中,有制程过程中容易发生的翘曲的问题以及成品结构强度不足的问题。
发明内容
本发明提供一种电子结构,能提升结构强度且降低其制程的生产成本。
本发明提供一种电子结构阵列,能提升结构强度且降低其制程的生产成本。
本发明另提出一种电子结构,包括重布线路结构、第一支撑结构、第二支撑结构、多个第一接合凸部、多个第二接合凸部、第一封胶以及第二封胶。第一支撑结构具有第一开口,配置于重布线路结构的第一面上。第二支撑结构具有第二开口,配置于重布线路结构相对于第一面的第二面上。第一接合凸部配置于重布线路结构的第一面上,且位于第一开口中。第二接合凸部配置于重布线路结构的第二面上,且位于第二开口中。第一封胶填充于第一开口与第一接合凸部之间。第二封胶,填充于第二开口与第二接合凸部之间。
本发明再提出一种电子结构阵列,包括多个电子结构。电子结构适于阵列排列以形成电子结构阵列。各电子结构包括重布线路结构、第一支撑结构、第二支撑结构、多个第一接合凸部、多个第二接合凸部、第一封胶以及第二封胶。第一支撑结构具有第一开口,配置于重布线路结构的第一面上。第二支撑结构具有第二开口,配置于重布线路结构相对于第一面的第二面上。第一接合凸部配置于重布线路结构的第一面上,且位于第一开口中。第二接合凸部配置于重布线路结构的第二面上,且位于第二开口中。第一封胶填充于第一开口与第一接合凸部之间。第二封胶,填充于第二开口与第二接合凸部之间。
基于上述,在本发明的电子结构及电子结构阵列中,由于电子结构阵列的各电子结构的外围区域配置有支撑结构,因此,能改善制程中发生的翘曲,并且能提升电子结构阵列的结构强度且降低其制程的生产成本,进而增加电子结构的产量。除此之外,支撑结构的配置也可以改善各电子结构的整体结构强度。
为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合所附图式作详细说明如下。
附图说明
图1A至图1D依序为本发明的一实施例的电子结构制程的俯视示意图。
图1E至图1G依序为图1D的电子结构制程的接续制程的仰视示意图。
图1H至图1I依序为图1G的电子结构制程的接续制程的俯视示意图。
图2A至图2I分别是图1A至图1I的结构沿图1A的线A-A’的剖面示意图。
图3A及图3B分别是图2H及图2I的结构的仰视示意图。
图4A是图1A及图2A的结构于完整状态下的立体示意图。
图4B是图1C及图2C的结构于完整状态下的立体示意图。
图4C是图1E及图2E的结构于完整状态下的立体示意图。
图4D是图1F及图2F的结构于完整状态下的立体示意图。
图4E是图1H、图2H及图3A的结构于完整状态下的立体示意图。
图5为本发明的另一实施例的电子结构的剖面示意图。
图6为本发明的又一实施例的电子结构的剖面示意图。
图7为本发明的再一实施例的电子结构的剖面示意图。
图8A至图8C依序为图2H的电子结构制程的接续制程的仰视示意图。
图9A至图9C分别是图8A至图8C的结构沿图1A的线A-A’的剖面示意图。
图10A为图8B的电子结构制程的另一实施例接续制程的仰视示意图。
图10B为图10A的结构沿图1A的线A-A’的剖面示意图。
其中,附图中符号的简单说明如下:
50、50A、50B:电子结构阵列;100、100A、100B、100C:电子结构;120:重布线路结构;130:第一接合凸部;132:第二接合凸部;140:第一粘着层;142:第二粘着层;144:第三粘着层;150A、150B:第一支撑结构;152A、152B:第二支撑结构;154A:第三支撑结构;160:第一封胶;162:第二封胶;164A、164B:第三封胶;170:晶片;170a:接垫;L:切割线;Q1:第一开口;Q2:第二开口;Q3:第三开口;S1:第一面;S2:第二面。
具体实施方式
请参考图1A、图2A及图4A,其中图1A及图2A的结构的完整状态如图4A所示,意即图4A的结构的局部呈现于图1A及图2A。在本实施例的电子结构制程中,提供承载板110及重布线路结构120,其中重布线路结构120具有相对的第一面S1及第二面S2,重布线路结构120配置于承载板110上。详细而言,重布线路结构120的第二面S2连接于承载板110。重布线路结构120可通过增层法(build-up process)于承载板110上直接地制作完成,其详细的制作方式可从相关领域的通常知识中获得足够的启示、建议与实施说明,故在此不再赘述。为了方便说明,图1A及图4A仅绘示出图2A中位于第一面S1上的部分图案化线路。
请参考图1B及图2B。在上述步骤之后,形成多个第一接合凸部130于重布线路结构120上。详细而言,在制作完重布线路结构120之后,继续在重布线路结构120的第一面S1的部分图案化线路上电镀出导电柱,导电柱的材质例如是铜或其他种类的金属。多个第一接合凸部130的排列方式例如是阵列排列如图1B所示,然而在其他实施例中,可依照电性需求电镀成不同的图案,本发明不以此为限。
请参考图1C、图2C及图4B,其中图1C及图2C的结构的完整状态如图4B所示,意即图4B的结构的局部呈现于图1C及图2C。在上述步骤之后,形成第一支撑结构150A于重布线路结构120上,其中第一支撑结构150A具有多个第一开口Q1,而上述多个第一接合凸部130位于这些第一开口Q1中。在本实施例中,此步骤中还包括经由第一粘着层140将第一支撑结构150A粘贴至重布线路结构120上,以使第一支撑结构150A固定于重布线路结构120上。详细而言,第一粘着层140配置于重布线路结构120与第一支撑结构150A之间。第一支撑结构150A为一个网状结构,例如是一个网状的加强支撑件。如此一来,通过具有多个开口的支撑结构及承载板可改善封装过程中发生的翘曲,特别是对于尺寸较大的封装体,且整体厚度较薄处,其改善效果更加明显。此外,通过具有多个第一开口Q1的第一支撑结构150A能提升电子结构阵列50(见于图4E)的结构强度且降低其制程的生产成本,进而增加电子结构100(见于图1I、2I及图3B)的产量。
请参考图1D及图2D。在上述步骤之后,形成第一封胶160覆盖第一支撑结构150A与第一接合凸部130,并且使第一封胶160填充于第一开口Q1与第一接合凸部130之间。换句话说,在此步骤中,将第一封胶160填充在第一支撑结构150A上并且完整地覆盖住第一支撑结构150A及第一接合凸部130,以使得第一支撑结构150A中的每一个第一开口Q1皆充满第一封胶160进而固定第一支撑结构150A及第一接合凸部130。在其他实施例中,也可以将第一封胶160填充于第一开口Q1与第一接合凸部130之间而不覆盖第一支撑结构150A与第一接合凸部130,本发明不以此为限。
请参考图1E、图2E及图4C,其中图1E及图2E的结构的完整状态如图4C所示,意即图4C的结构的局部呈现于图1E及图2E。在上述步骤之后,移除承载板110。由于第一封胶160充满在每一个第一开口Q1,因此第一支撑结构150A与重布线路结构120通过第一封胶160彼此固定连接而不会分离。为了方便说明,图1E仅绘示出图2E中位于第二面S2上的部分图案化线路。
请参考图1F、图2F及图4D,其中图1F及图2F的结构的完整状态如图4D所示,意即图4D的结构的局部呈现于图1F及图2F。在上述步骤之后,形成多个第二接合凸部132及第二支撑结构152B于重布线路结构120上,其中第二支撑结构152B具有多个第二开口Q2,第二接合凸部132位于第二开口Q2中,其中重布线路结构120位于第一支撑结构150A与第二支撑结构152B之间。详细而言,在上述步骤之后,继续在重布线路结构120的第二面S2的部分图案化线路上电镀出导电柱。在本实施例中,其导电柱的材质及排列的方式可依照电性需求而相同或不同于第一接合凸部130,本发明不以此为限。同时,在电镀出导电柱的步骤中,亦电镀出第二支撑结构152B。换句话说,在本实施例中,第二支撑结构152B可与多个第二接合凸部132同时以电镀法形成在重布线路结构120上,意即,第二支撑结构152B与第二接合凸部132一体成形。如此一来,可节省制作第二支撑结构152B的材料。第二支撑结构152B相同于第一支撑结构150A为一个网状结构,例如是一个网状的加强支撑件。如此一来,可改善封装过程中发生的翘曲,特别是重布线路结构120的厚度较薄处(见于图2E)。此外,通过具有多个第二开口Q2的第二支撑结构152B能提升电子结构阵列50(见于图4E)的结构强度且降低其制程的生产成本,进而增加电子结构100(见于图1I、2I及图3B)的产量。
请参考图1G及图2G。在上述步骤之后,形成第二封胶162覆盖第二支撑结构152B与第二接合凸部132,第二封胶162填充于第二开口Q2与第二接合凸部132之间。换句话说,在此步骤中,将第二封胶162填充在第二支撑结构152B上并且完整地覆盖住第二支撑结构152B及第二接合凸部132,以使得第二支撑结构152B中的每一个第二开口Q2皆充满第二封胶162进而固定第二支撑结构152B及第二接合凸部132。在其他实施例中,也可以第二封胶162填充于第二开口Q2与第二接合凸部132之间而不覆盖第二支撑结构152B与第二接合凸部132,本发明不以此为限。
请参考图1H、图2H、图3A及图4E,其中图1H、图2H及图3A的结构的完整状态如图4E所示,意即图4E的结构的局部呈现于图1H、图2H及图3A。在上述步骤之后,还可以移除第一封胶160的一部分及第二封胶162的一部分,以使第一支撑结构150A以及第一接合凸部130裸露于第一封胶160,且第二支撑结构152B以及第二接合凸部132裸露于第二封胶162,进而使第一接合凸部130及第二接合凸部132作后续接合其他元件或装置之用。详细而言,在本实施例中,例如可通过蚀刻、喷砂、抛光等制程方法,将第一封胶160凸出于第一接合凸部130的一部分以及第二封胶162凸出于第二接合凸部132的一部分移除,使得第一接合凸部130及第二接合凸部132可以分别暴露第一封胶160及第二封胶162。此外,在本实施例中,第二接合凸部132裸露于第二封胶162的面积小于第一接合凸部130裸露于第一封胶160的面积,以达到扇出(fan-out)信号至后续所欲接合目标的电路的目的。除此之外,第一接合凸部130及第二接合凸部132所凸出于第一封胶160及第二封胶162的裸露部分可依据所欲接合的目标改变而决定,本发明不以此为限。至此,完成电子结构阵列50,其包含多个尚未切割的电子结构100,如图4E所示。
请参考图1I、图2I以及图3B。在上述步骤之后,沿第一开口Q1彼此之间的多个切割线L(见于图1H、图2H、图3A及图4E)切割第一支撑结构150A、第二支撑结构152B以及重布线路结构120以形成多个电子结构100。换句话说,每个沿着切割线L切割第一支撑结构150A以及第二支撑结构152B所形成的电子结构100中具有第一支撑结构150A的一部分与第二支撑结构152B的一部分,而此第一支撑结构150A的一部分以及第二支撑结构152B对于单一个电子结构100而言即为两个环状的加强支撑件,其能提升电子结构100的整体结构强度,特别是整体结构厚度较薄处。更进一步来说,由于两个环状的加强支撑件对齐于切割线L进行切割而形成,故两加强支撑件皆会暴露于单一个电子结构100的侧面102,因此对于电子结构100外围区域来说,提供了较强的保护。同样地,重布线路结构120也对齐于切割线L被切割而使得重布线路结构120的一部分暴露于单一个电子结构100的侧面102。
请再参考图1H、图2H、图3A及图4E,具体而言,在本实施例中,电子结构阵列50包括多个电子结构100,且电子结构100适于阵列排列以形成电子结构阵列50,如图4E所呈现。各该电子结构100包括重布线路结构120、第一支撑结构150A、第二支撑结构152B、多个第一接合凸部130、多个第二接合凸部132、第一封胶160以及第二封胶162。第一支撑结构150A具有第一开口Q1并配置于重布线路结构120的第一面S1上。第二支撑结构152B具有第二开口Q2,配置于重布线路结构120相对于第一面S1的第二面S2上。多个第一接合凸部130配置于重布线路结构120的第一面S1上,且位于第一开口Q1中。多个第二接合凸部132配置于重布线路结构120的第二面S2上,且位于第二开口Q2中。第一封胶160填充于第一开口Q1与第一接合凸部130之间。第二封胶162填充于第二开口Q2与第二接合凸部132之间。换句话说,电子结构100是由电子结构阵列50切割而成,因此重布线路结构120、第一支撑结构150A以及第二支撑结构152B也被切割而形成于各电子结构100中。由于电子结构阵列50的各电子结构100的外围区域配置有第一支撑结构150A以及第二支撑结构152B,因此,能改善电子结构阵列50封装过程中发生的翘曲,并且能提升电子结构阵列50的结构强度且降低其制程的生产成本,进而增加电子结构100的产量。除此之外,第一支撑结构150A以及第二支撑结构152B的配置也可以改善各电子结构100的整体结构强度。
请再参考图1I、图2I以及图3B,具体而言,在本实施例中,电子结构100包括重布线路结构120、第一支撑结构150A、第二支撑结构152B、多个第一接合凸部130、多个第二接合凸部132、第一封胶160以及第二封胶162。第一支撑结构150A具有第一开口Q1并配置于重布线路结构120的第一面S1上。第二支撑结构152B具有第二开口Q2并配置于重布线路结构120相对于第一面S1的第二面S2上。多个第一接合凸部130配置于重布线路结构120的第一面S1上,且位于第一开口Q1中。多个第二接合凸部132配置于重布线路结构120的第二面S2上,且位于第二开口Q2中。第一封胶160填充于第一开口Q1与第一接合凸部130之间。第二封胶162填充于第二开口Q2与第二接合凸部132之间。其中电子结构100是由电子结构阵列50(见于图4E)切割而成,因此重布线路结构120、第一支撑结构150A以及第二支撑结构152B也被切割而形成于各电子结构100中。由于电子结构100的外围区域配置有第一支撑结构150A以及第二支撑结构152B,因此,能改善电子结构100的整体结构强度,特别是整体结构厚度较薄处。
请参考图5,本实施例的电子结构100A类似于图2I的电子结构100,两者之间主要差异在于,在形成多个第一接合凸部130于重布线路结构120的步骤中(见于图2B),第一支撑结构150B与第一接合凸部130同时以电镀法形成在重布线路结构120上,意即,第一支撑结构150B与第一接合凸部130一体成形。如此一来,可节省制作第一支撑结构150B的材料。
请参考图6,本实施例的电子结构100B类似于图5的电子结构100A,两者之间主要差异在于,在形成多个第二接合凸部132于重布线路结构120的步骤中,经由第二粘着层142将第二支撑结构152A粘贴至重布线路结构120上,以使第二支撑结构152A固定于重布线路结构120上。详细而言,第二粘着层142配置于重布线路结构120与第二支撑结构152A之间。如此一来,通过具有多个开口的支撑结构可改善封装过程中发生的翘曲,特别是整体结构厚度较薄处。
请参考图7,本实施例的电子结构100C类似于图2I的电子结构100,两者之间主要差异在于,在形成多个第二接合凸部132于重布线路结构120的步骤中(见于图2F),经由第二粘着层142将第二支撑结构152A粘贴至重布线路结构120上,以使第二支撑结构152A固定于重布线路结构120上。详细而言,第二粘着层142配置于重布线路结构120与第二支撑结构152A之间。如此一来,通过具有多个开口的支撑结构可改善封装过程中发生的翘曲,特别是整体结构厚度较薄处。
请参考图8A及图9A。在移除第一封胶160的一部分及第二封162胶的一部分的步骤之后,形成第三支撑结构154A于第二支撑结构152A上,第二支撑结构152A位于第一支撑结构150B与第三支撑结构154A之间,第三支撑结构154A具有多个第三开口Q3。在形成第三支撑结构154A于第二支撑结构152A的步骤中,经由第三粘着层144将第三支撑结构154A粘贴至第二支撑结构152A上,其中第三支撑结构154A为网状结构,例如是一个网状的加强支撑件。如此一来,可对后续所欲接合至第二接合凸部132上的目标改善其封装过程中发生的翘曲并改善整体结构强度,特别是整体结构厚度较薄处。
请参考图8B及图9B。在上述步骤之后,于各第三开口Q3中设置晶片170,且晶片170连接于对应的第二开口Q2中的多个第二接合凸部132。换句话说,在每个第二开口Q2中的多个第二接合凸部132上设置一个晶片170。然而,在其他实施例中,也可以设置两个以上晶片,本发明不以此为限。详细而言,配置晶片170并且直接地连接第二接合凸部132,通过重布线路结构120的配置,可将晶片170上的信号扇出(fan-out)至重布线路结构120的晶片170投影区外,进而增加晶片170的信号配置的弹性。另外,第二接合凸部132可直接与晶片170上的接垫170a电性连接,而不需要额外再配置凸块(bump)。此外,还可以配置多个焊球(未绘示)在第一接合凸部130上,而重布线路结构120位于晶片170与焊球之间。
请参考图8C及图9C。在上述步骤之后,形成第三封胶164A于第二封胶162上,该第三封胶164A填充于第二封胶162与对应的晶片170之间,以完成晶片封装阵列50A。换句话说,在此步骤中,将第三封胶164A填充在第二封胶162上并且完整地覆盖住第三支撑结构154A及晶片170,以使得第三支撑结构154A中的每一个第三开口Q3皆充满第三封胶164A进而固定第三支撑结构154A及晶片170。
请参考图10A及图10B。本实施例的电子结构制程步骤类似于图8C及图9C的电子结构制程步骤,两者之间主要差异在于第三封胶164B的配置。详细而言,在上述的步骤中,第三封胶164B可仅填充于第二封胶162与对应的晶片170之间,或着是,移除第三封胶164A(见于图8C及图9C)的一部分以形成第三封胶164B进而使晶片170裸露,进而完成晶片封装阵列50B。如此一来,晶片170可暴露于电子结构阵列50B外以接触散热导体,进而使后续所切割的单一个电子结构有更好的散热性。
综上所述,在本发明的电子结构制程中,由于电子结构阵列的个别电子结构的外围区域配置有支撑结构,因此,能改善制程中发生的翘曲,特别是整体结构厚度较薄处,并且能提升电子结构阵列的结构强度且降低其制程的生产成本,进而增加电子结构的产量。除此之外,支撑结构的配置也可以改善个别电子结构的整体结构强度。
以上所述仅为本发明较佳实施例,然其并非用以限定本发明的范围,任何熟悉本项技术的人员,在不脱离本发明的精神和范围内,可在此基础上做进一步的改进和变化,因此本发明的保护范围当以本申请的权利要求书所界定的范围为准。
Claims (25)
1.一种电子结构,其特征在于,包括:
重布线路结构;
第一支撑结构,具有第一开口,且配置于该重布线路结构的第一面上;
第二支撑结构,具有第二开口,且配置于该重布线路结构相对于该第一面的第二面上;
多个第一接合凸部,配置于该重布线路结构的该第一面上,且位于该第一开口中;
多个第二接合凸部,配置于该重布线路结构的该第二面上,且位于该第二开口中,该多个第二接合凸部适于连结至少一晶片;
第一封胶,充满于该第一开口与对应的该多个第一接合凸部之间,以及充满于该多个第一接合凸部的相邻的第一接合凸部之间;以及
第二封胶,充满于该第二开口与对应的该多个第二接合凸部之间,以及充满于该多个第二接合凸部的相邻的第二接合凸部之间,
其中,该多个第一接合凸部的顶面裸露于该第一封胶,该多个第二接合凸部的顶面裸露于该第二封胶,且该多个第二接合凸部的顶面裸露于该第二封胶的面积小于该多个第一接合凸部的顶面裸露于该第一封胶的面积,以适于信号扇出接合。
2.根据权利要求1所述的电子结构,其特征在于,该第一支撑结构的顶面裸露于该第一封胶,且该第二支撑结构的顶面裸露于该第二封胶。
3.根据权利要求2所述的电子结构,其特征在于,该多个第一接合凸部与该多个第二接合凸部以电镀法形成。
4.根据权利要求1所述的电子结构,其特征在于,该第一支撑结构的一部分与该第二支撑结构的一部分裸露于该重布线路结构的侧面。
5.根据权利要求1所述的电子结构,其特征在于,该第一支撑结构与该多个第一接合凸部一体成形。
6.根据权利要求1所述的电子结构,其特征在于,该第二支撑结构与该多个第二接合凸部一体成形。
7.根据权利要求1所述的电子结构,其特征在于,还包括:
第一粘着层,配置于该重布线路结构与该第一支撑结构之间。
8.根据权利要求1所述的电子结构,其特征在于,还包括:
第二粘着层,配置于该重布线路结构与该第二支撑结构之间。
9.根据权利要求1所述的电子结构,其特征在于,还包括:
第三支撑结构,具有第三开口,且配置于该第二支撑结构上;
该至少一晶片,设置于该第三开口中且连结于该多个第二接合凸部;以及
第三封胶,填充于该第二封胶与该至少一晶片之间。
10.根据权利要求9所述的电子结构,其特征在于,还包括:
第三粘着层,配置于该第三支撑结构与该第二支撑结构之间。
11.根据权利要求9所述的电子结构,其特征在于,该第三封胶覆盖该第三支撑结构与该至少一晶片。
12.一种电子结构阵列,其特征在于,包括:
多个电子结构,适于阵列排列以形成该电子结构阵列,各该电子结构包括:
重布线路结构;
第一支撑结构,具有第一开口,且配置于该重布线路结构的第一面上;
第二支撑结构,具有第二开口,且配置于该重布线路结构相对于该第一面的第二面上;
多个第一接合凸部,配置于该重布线路结构的该第一面上,且位于该第一开口中;
多个第二接合凸部,配置于该重布线路结构的该第二面上,且位于该第二开口中,该多个第二接合凸部适于连结至少一晶片;
第一封胶,充满于该第一开口与对应的该多个第一接合凸部之间,以及充满于该多个第一接合凸部的相邻的第一接合凸部之间;以及
第二封胶,充满于该第二开口与对应的该多个第二接合凸部之间,以及充满于该多个第二接合凸部的相邻的第二接合凸部之间,
其中,该多个第一接合凸部的顶面裸露于该第一封胶,该多个第二接合凸部的顶面裸露于该第二封胶,且该多个第二接合凸部的顶面裸露于该第二封胶的面积小于该多个第一接合凸部的顶面裸露于该第一封胶的面积,以适于信号扇出接合。
13.根据权利要求12所述的电子结构阵列,其特征在于,该第一支撑结构的顶面裸露于该第一封胶,且该第二支撑结构的顶面裸露于该第二封胶。
14.根据权利要求13所述的电子结构阵列,其特征在于,该多个第一接合凸部与该多个第二接合凸部以电镀法形成。
15.根据权利要求12所述的电子结构阵列,其特征在于,该第一支撑结构的一部分与该第二支撑结构的一部分裸露于该重布线路结构的侧面。
16.根据权利要求12所述的电子结构阵列,其特征在于,该第一支撑结构形成为单一个网状结构。
17.根据权利要求12所述的电子结构阵列,其特征在于,该第二支撑结构形成为单一个网状结构。
18.根据权利要求12所述的电子结构阵列,其特征在于,该第一支撑结构与该多个第一接合凸部一体成形。
19.根据权利要求12所述的电子结构阵列,其特征在于,该第二支撑结构与该多个第二接合凸部一体成形。
20.根据权利要求12所述的电子结构阵列,其特征在于,各该电子结构还包括第一粘着层,该第一粘着层配置于该重布线路结构与该第一支撑结构之间。
21.根据权利要求12所述的电子结构阵列,其特征在于,各该电子结构还包括第二粘着层,该第二粘着层配置于该重布线路结构与该第二支撑结构之间。
22.根据权利要求12所述的电子结构阵列,其特征在于,各该电子结构还包括:
第三支撑结构,具有第三开口,且配置于该第二支撑结构上;
该至少一晶片,设置于该第三开口中且连结于该多个第二接合凸部;以及
第三封胶,填充于该第二封胶与该至少一晶片之间。
23.根据权利要求22所述的电子结构阵列,其特征在于,该第三支撑结构形成为单一个网状结构。
24.根据权利要求22所述的电子结构阵列,其特征在于,还包括:
第三粘着层,配置于该第三支撑结构与该第二支撑结构之间。
25.根据权利要求22所述的电子结构阵列,其特征在于,该第三封胶覆盖该第三支撑结构及该至少一晶片。
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