CN107393848B - 一种高密封度的气相腐蚀腔体 - Google Patents
一种高密封度的气相腐蚀腔体 Download PDFInfo
- Publication number
- CN107393848B CN107393848B CN201710564802.9A CN201710564802A CN107393848B CN 107393848 B CN107393848 B CN 107393848B CN 201710564802 A CN201710564802 A CN 201710564802A CN 107393848 B CN107393848 B CN 107393848B
- Authority
- CN
- China
- Prior art keywords
- sealing
- cavity
- seal
- tightness
- phase etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710564802.9A CN107393848B (zh) | 2017-07-12 | 2017-07-12 | 一种高密封度的气相腐蚀腔体 |
PCT/CN2018/087657 WO2019011056A1 (zh) | 2017-07-12 | 2018-05-21 | 一种高密封度的气相腐蚀腔体 |
JP2019571415A JP6900134B2 (ja) | 2017-07-12 | 2018-05-21 | 高気密気相腐食キャビティ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710564802.9A CN107393848B (zh) | 2017-07-12 | 2017-07-12 | 一种高密封度的气相腐蚀腔体 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107393848A CN107393848A (zh) | 2017-11-24 |
CN107393848B true CN107393848B (zh) | 2019-12-10 |
Family
ID=60339371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710564802.9A Active CN107393848B (zh) | 2017-07-12 | 2017-07-12 | 一种高密封度的气相腐蚀腔体 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6900134B2 (ja) |
CN (1) | CN107393848B (ja) |
WO (1) | WO2019011056A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107393848B (zh) * | 2017-07-12 | 2019-12-10 | 江苏鲁汶仪器有限公司 | 一种高密封度的气相腐蚀腔体 |
JP7066263B2 (ja) * | 2018-01-23 | 2022-05-13 | 株式会社ディスコ | 加工方法、エッチング装置、及びレーザ加工装置 |
CN111336792B (zh) * | 2018-12-19 | 2022-03-11 | 江苏鲁汶仪器有限公司 | 一种干燥微水珠的腔体 |
CN117367924A (zh) * | 2022-06-29 | 2024-01-09 | 江苏鲁汶仪器股份有限公司 | 金属沾污收集系统和金属沾污收集方法 |
CN115535485B (zh) * | 2022-09-24 | 2023-04-25 | 临沂市春明化工有限公司 | 用于化工品的防泄漏存贮装置 |
CN118173472B (zh) * | 2024-03-14 | 2024-08-16 | 迈睿捷(南京)半导体科技有限公司 | 一种防微小颗粒漂浮的晶圆密封加热装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103137520A (zh) * | 2011-11-30 | 2013-06-05 | 昆山中辰矽晶有限公司 | 半导体晶片气蚀装置 |
CN104103561A (zh) * | 2014-07-24 | 2014-10-15 | 河北神通光电科技有限公司 | 用于气态氟化氢刻蚀二氧化硅的刻蚀腔体及其刻蚀系统 |
CN105304443A (zh) * | 2014-05-30 | 2016-02-03 | 盛美半导体设备(上海)有限公司 | 干法刻蚀装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06103685B2 (ja) * | 1989-05-06 | 1994-12-14 | 大日本スクリーン製造株式会社 | 基板の洗浄処理方法および装置 |
JPH09115889A (ja) * | 1995-10-17 | 1997-05-02 | Nippon Asm Kk | 半導体エッチング装置及びその方法 |
JP3526284B2 (ja) * | 2001-07-13 | 2004-05-10 | エム・エフエスアイ株式会社 | 基板表面の処理方法 |
JP5865095B2 (ja) * | 2012-01-30 | 2016-02-17 | 住友精密工業株式会社 | エッチング装置 |
CN107393848B (zh) * | 2017-07-12 | 2019-12-10 | 江苏鲁汶仪器有限公司 | 一种高密封度的气相腐蚀腔体 |
-
2017
- 2017-07-12 CN CN201710564802.9A patent/CN107393848B/zh active Active
-
2018
- 2018-05-21 JP JP2019571415A patent/JP6900134B2/ja active Active
- 2018-05-21 WO PCT/CN2018/087657 patent/WO2019011056A1/zh active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103137520A (zh) * | 2011-11-30 | 2013-06-05 | 昆山中辰矽晶有限公司 | 半导体晶片气蚀装置 |
CN105304443A (zh) * | 2014-05-30 | 2016-02-03 | 盛美半导体设备(上海)有限公司 | 干法刻蚀装置 |
CN104103561A (zh) * | 2014-07-24 | 2014-10-15 | 河北神通光电科技有限公司 | 用于气态氟化氢刻蚀二氧化硅的刻蚀腔体及其刻蚀系统 |
Also Published As
Publication number | Publication date |
---|---|
JP6900134B2 (ja) | 2021-07-07 |
JP2020524913A (ja) | 2020-08-20 |
CN107393848A (zh) | 2017-11-24 |
WO2019011056A1 (zh) | 2019-01-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107393848B (zh) | 一种高密封度的气相腐蚀腔体 | |
KR102594538B1 (ko) | 고온 프로세싱을 위한 플라즈마 부식 저항성 가열기 | |
US8608856B2 (en) | Sealing part and substrate processing apparatus | |
KR100793553B1 (ko) | 밀봉 부품 및 기판 처리 장치 | |
US6709525B2 (en) | Low pressure chemical vapor deposition apparatus of vertical type for fabricating semiconductor devices | |
KR100885577B1 (ko) | 종형 열처리 장치 | |
JPH08227876A (ja) | プラズマエッチングリアクタ内の真空シール用保護カラー | |
CN109852949B (zh) | 一种反应腔室及半导体处理设备 | |
KR101907247B1 (ko) | 기판 처리 장치 및 기판 적재 유닛의 제조 방법 | |
EP1463093B1 (en) | Thermal treatment system for semiconductors | |
CN111524784B (zh) | 等离子体设备和半导体器件的制备方法 | |
KR102096985B1 (ko) | 기판 처리장치 | |
CN107610998B (zh) | 一种能够调节内外压差的气相腐蚀腔体及利用其进行气相腐蚀的方法 | |
KR101615140B1 (ko) | 오염원 차단가이드를 구비하는 기판처리장치 | |
TWI613412B (zh) | 高溫處理室蓋體 | |
JP2003209064A (ja) | 半導体製造装置 | |
CN218241781U (zh) | 基板处理装置 | |
US20240337318A1 (en) | High temperature metal seals for vacuum segregation | |
JP4193527B2 (ja) | 半導体熱処理装置 | |
CN112714949B (zh) | 具有精确温度和流量控制的多站腔室盖 | |
EP1120813B1 (en) | Reactor for manufacturing of a semiconductor device | |
KR20060131537A (ko) | 챔버 어셈블리 및 이를 갖는 기판 가공 장치 | |
JP5495502B2 (ja) | 減圧熱処理装置 | |
CN118622988A (zh) | 一种密封结构及半导体处理装置 | |
KR20030058393A (ko) | Rf 플라즈마 반응기 및 이를 이용한 웨이퍼 처리 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 221300 No.8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee after: Jiangsu Luwen Instrument Co.,Ltd. Address before: 221300 No.8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee before: JIANGSU LEUVEN INSTRUMMENTS Co.,Ltd. |