CN107369631A - 电路部件的连接方法 - Google Patents
电路部件的连接方法 Download PDFInfo
- Publication number
- CN107369631A CN107369631A CN201710315343.0A CN201710315343A CN107369631A CN 107369631 A CN107369631 A CN 107369631A CN 201710315343 A CN201710315343 A CN 201710315343A CN 107369631 A CN107369631 A CN 107369631A
- Authority
- CN
- China
- Prior art keywords
- circuit block
- solder
- electrode
- pressure
- bismuth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/264—Bi as the principal constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C12/00—Alloys based on antimony or bismuth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13075—Plural core members
- H01L2224/1308—Plural core members being stacked
- H01L2224/13082—Two-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13399—Coating material
- H01L2224/134—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13401—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/165—Material
- H01L2224/16501—Material at the bonding interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29311—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29313—Bismuth [Bi] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
- H01L2224/802—Applying energy for connecting
- H01L2224/80201—Compression bonding
- H01L2224/80203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83862—Heat curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9211—Parallel connecting processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01083—Bismuth [Bi]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Abstract
本发明提供一种电路部件的连接方法,包括:第1工序,准备在粘合剂中分散了焊料的连接材料;第2工序,以第1电路部件的第1电极与第2电路部件的第2电极隔着连接材料对置的方式,配置第1电路部件和第2电路部件;和第3工序,一边对连接材料加热,一边对第1电路部件与第2电路部件进行压接。第3工序具有:在连接材料的温度达到焊料的熔点之前进行的第1按压工序、以及继第1按压工序之后的第2按压工序。
Description
技术领域
本公开涉及利用包含焊料的连接材料来对分别具有电极的第1电路部件和第2电路部件的电极间进行连接的方法。
背景技术
在具有第1电极的第1电路部件与具有第2电极的第2电路部件的连接中,广泛应用包含导电粒子的各向异性导电性粘合剂。通过各向异性导电性粘合剂,第1电路部件与第2电路部件被粘合,并且第1电极与第2电极通过导电粒子被电连接。
对于各向异性导电性粘合剂的导电粒子,使用例如被镀覆金的镍粒子或者被镀覆金属的树脂粒子。镍粒子或树脂粒子在电极间以被压缩的状态与电极接触,实现与电极的电连接。为了通过电极与导电粒子的接触来实现电连接,需要较高的压力(例如50MPa~150MPa)。
此外,基于各向异性导电性粘合剂的电路部件间的连接在例如200℃左右的温度下通过热压接来进行。因此,在对介于第1电路部件与第2电路部件之间的各向异性导电性粘合剂施加高压力时,粘合剂的粘度大大降低,流动性增加。因此,导电粒子容易与粘合剂一起从电极间向其周围被挤出,电极间难以高效地捕获导电粒子。此外,由于对各电路部件施加的压力较大,施加于电路部件的热应力也较大,因此在电路部件较薄、其强度较低的情况下,容易产生电路部件的弯曲等不良状况。
为此,正在研讨取代导电粒子而使用焊料粒子,通过电极与熔融焊料之间的浸润来实现电连接。例如,在日本特开平8-186156号公报中,提出了在热压接时以2阶段对包含焊料粒子的热固化性粘合剂进行加热。具体而言,以焊料粒子不熔融的温度对热固化性粘合剂进行预加热,使得粘合剂在某种程度上固化,之后,以焊料粒子熔融的温度进行正式加热,使得粘合剂完全固化。由此,熔融焊料的过剩的流动得到抑制。
图3中表示热压接工序中的粘合剂的温度分布图、以及施加于焊料粒子的压力分布图的一例。图3中的实线表示压力分布图,单点划线表示温度分布图。在热压接的初期(时间t11至t12),包含焊料粒子的粘合剂以低于焊料的熔点Tm的温度T11被加热,并且对焊料粒子施加P11的压力。之后,使加热温度上升,时间t13以后以超过熔点Tm的温度T12进行正式加热。正式加热中,焊料粒子熔融而浸润扩散至电极,在加热结束时,焊料固化而实现电连接。
发明内容
本公开包括:第1工序,准备连接材料,该连接材料包含粘合剂以及分散在所述粘合剂中的焊料;第2工序,准备具有第1电极的第1电路部件和具有第2电极的第2电路部件,以所述第1电极与所述第2电极隔着所述连接材料而对置的方式配置所述第1电路部件和所述第2电路部件;和第3工序,一边对所述连接材料进行加热,一边对所述第1电路部件与所述第2电路部件进行压接,所述第3工序具有:在所述连接材料的温度达到所述焊料的熔点之前进行的第1按压工序、以及继所述第1按压工序之后的第2按压工序,在所述第1按压工序中,在以第1压力按压所述焊料使其变形之后,将按压所述焊料的压力变更为小于所述第1压力的第2压力,在所述第2按压工序中,以所述第2压力按压所述焊料。
根据本公开所涉及的电路部件的连接方法,能够提高第1电路部件具有的第1电极与第2电路部件具有的第2电极之间的电连接的可靠性。
附图说明
图1是本公开所涉及的电路部件的连接方法具备的热压接工序中的连接材料的温度分布图以及对焊料施加的压力分布图的一例的示意图。
图2是表示本公开所涉及的热压接工序的第1按压工序中的连接材料的状态的一例的主要部分示意图。
图3是表示现有的电路部件的连接方法具备的热压接工序中的连接材料的温度分布图以及对焊料施加的压力分布图的一例的示意图。
图4是表示现有的热压接工序中的连接材料的状态的一例的主要部分示意图。
具体实施方式
在实施方式的说明之前,简单说明现有技术中的问题点。
从高效地进行电路部件间的连接的观点出发,期望热压接以短时间来进行。该情况下,在热压接时,进行图3所示的这种2阶段的加热温度的控制是极为困难的。此外,为了通过预加热使得热固化性粘合剂的固化进展至某种程度,需要将预加热的时间(图3中的t11至t12的时间)延长到一定程度。
也就是说,热压接需要比较长的时间,在采用较薄且强度较弱的电路部件的情况下是较为不利的。进而,在热固化性粘合剂的固化进展时,由于粘合剂的流动性变高,因此与镍粒子、树脂粒子的情况相同,焊料粒子容易从电极间向其周围被挤出。
图4是示意地表示在将第2电路部件51相对于第1电路部件41进行按压时的连接材料31(粘合剂32与焊料粒子33的混合物)的流动状态。连接材料31包含粘合剂32和分散在粘合剂32中的焊料粒子33。在粘合剂32的粘度变低时,若对第1电极42与设置在第2电极52的凸块53之间施加压力,则随着粘合剂32的流动,焊料粒子33从电极间被挤出的概率变高。若这种焊料粒子33的移动变得显著,则相邻的电极间发生短路的可能性变高。近年,由于液晶显示器的小型化等,电极尺寸正在变小,并且相邻的电极间的间距也正在变窄。因此,在第1电极42与第2电极52之间确保所需量的焊料粒子33且抑制相邻的电极间的短路变得困难。
本公开涉及电路部件的连接方法,具备:第1工序,准备包含粘合剂以及分散在粘合剂中的焊料的连接材料;第2工序,准备具有第1电极的第1电路部件和具有第2电极的第2电路部件,以第1电极与第2电极隔着连接材料而对置的方式配置第1电路部件和第2电路部件;和第3工序(热压接工序),一边对连接材料加热,一边对第1电路部件与第2电路部件进行压接。
本公开所涉及的电路部件的连接方法在第3工序中对利用焊料将第1电极和第2电极电连接的方法进行改良。具体而言,在连接材料的温度达到焊料的熔点之前,以第1压力对焊料进行按压使其变形之后,将按压焊料的压力变更为小于第1压力的第2压力(第1按压工序)。然后,继第1按压工序之后,以第2压力按压焊料(第2按压工序)。在第2按压工序中,连接材料被加热至焊料的熔点以上,从而焊料熔融。
在第1按压工序中,由于利用第1电极和第2电极来按压熔融前的焊料,将其夹在两电极间,因此焊料由于锚定效果而被第1电极和第2电极牢固地捕获。由于焊料本来较为柔软,因此即便是比利用包含树脂粒子等的各向异性导电性粘合剂的现有技术的情况低的第1压力,也能够容易将焊料捕获至电极间。
此外,在第1按压工序中,在通过加热而粘合剂的粘度大大降低从而粘合剂开始流动之前,施加比现有技术低的第1压力。因此,能够避免伴随着粘合剂的流动而焊料从电极间向其周围被挤出的情况。此外,由于在第1按压工序中焊料在电极间被牢固地捕获,因此在第2按压工序中即便因加热而粘合剂开始流动也能抑制伴随着粘合剂的流动而焊料从电极间向其周围被挤出的情况。
进而,在第1按压工序中,在焊料熔融之前,施加于焊料的压力从第1压力降低至第2压力。由此,在第2按压工序中,熔融的焊料不会被过度挤压,相邻的电极间的短路发生得到抑制。
在第2按压工序中,由于熔融的焊料在电极间浸润扩散,能够实现电极间的电连接,因此不需要使用包含树脂粒子等的各向异性导电性粘合剂的情况下的那种高压力。由此,第2压力能够被设定得非常低,即便在对较薄且强度低的电路部件进行连接的情况下,也能够抑制电路部件的弯曲等不良情况的产生。
如以上,通过采用上述的第1按压工序以及第2按压工序,能够提高第1电极与第2电极的电连接的可靠性。上述连接方法在连接较薄且强度低的电路部件的情况下、连接相邻的电极间的间距较窄的电路部件的情况下特别有利。
以下,对于本公开所涉及的电路部件的连接方法进行详细说明。
(第1工序)
在本工序中,准备包含粘合剂以及分散在粘合剂中的焊料的连接材料。连接材料可以是糊膏状,也可以是薄膜状。
(粘合剂)
粘合剂是包含热固化性树脂以及/或者热可塑性树脂的树脂组成物。其中,优选包含热固化性树脂的树脂组成物,优选热固化性树脂包含环氧树脂。树脂组成物可以包含热固化性树脂的固化剂。作为固化剂,可列举胺、酚醛树脂、酸酐等。树脂组成物可以进一步包含各种添加剂。作为添加剂,可列举除去焊料或电极表面的氧化覆膜的活性剂、填料、固化促进剂等。
优选热固化性树脂的固化反应进展的温度比焊料的熔点高。由此,热固化性树脂的固化反应几乎是在焊料熔融、通过焊料而第1电极以及第2电极被浸润之后进展的。由此,能够提高针对第1电极与第2电极的电连接的可靠性。此外,固化反应进展的温度较高的热固化性树脂在第1按压工序中不易熔融,容易将流动性维持得较低。固化反应进展的温度例如根据由差示扫描量热计(DSC)测量的吸热峰值温度来求出。
为了在电极间高效地捕获焊料,优选粘合剂在常温下是固体状态。此外,在第1按压工序中,在对焊料施加最大压力(第1压力)的时间点,优选粘合剂几乎不流动或者流动性较小,更为优选粘合剂维持固体状态。由此,能够抑制因粘合剂的流动引起的焊料从电极间被挤出。
(焊料)
焊料没有特别限定,例如包含锡、银、铋、铟、镍、锌、铜等,作为包含这些元素的合金,可将锡-银-铜合金、锡-铋合金、锡-铟合金、锡-锌合金、铋-铟合金、锡-铋-铟合金等用于焊料。其中,优选焊料包含铋-铟合金。由于包含铋以及铟的焊料比较柔软,例如维氏硬度小于20Hv,因此在第1按压工序中按压焊料时容易得到与电极之间的锚定效果。
此外,由于焊料中包含的铟的延展性优异,因此能够增大焊料与第1电极以及第2电极之间的浸润面积。另一方面,铋是从熔融状态固化时体积膨胀的异常液体。焊料通过包含铋,从而在焊料固化时,焊料与第1电极以及第2电极之间的界面处的压力得以提升。由此,通过焊料的固化所形成的焊料部能够牢固地密接于第1电极以及第2电极。也就是说,即便在施加于焊料的第2压力非常小的情况下,焊料通过包含铋以及铟,也可获得相对于第1电极与第2电极的电连接的高可靠性。
包含铋以及铟的合金可以实现低熔点化。因此,电极间的连接所需的加热温度也可以是低温(例如,焊料的熔点+10℃以下)。由此,在连接时,能够减小施加于电路部件的压力和热引起的应力。由此,即便连接较薄且强度低的电路部件的情况下,也不易产生不良情况,能够确保高可靠性。
焊料中包含的铋-铟合金例如是粒子状。从确保第1电极与第2电极的导通并确保相邻的电极间的绝缘的观点出发,来选择铋-铟合金的粒子(以下称为合金粒子)的大小。若举出一例,期望合金粒子的大小(最大直径)为电极宽度的1/5以下,更为期望是1/10以下。再有,焊料也可以包含铋-铟合金以外的成分,但优选95质量%以上是铋-铟合金,进一步优选98质量%以上是铋-铟合金。
优选焊料中包含的铋-铟合金的熔点(mp)为72℃~109℃,更为优选熔点为85℃~109℃,特别优选熔点为88℃~90℃。由此,能够在例如110℃以下、期望为100℃以下的低温下进行电极间的连接。由此,能够显著地降低因残留在电路部件的热量引起的应力。
作为熔点为72℃~109℃的铋-铟合金,可列举例如35Bi-65In(mp:72℃)、51Bi-49In(mp:85℃)、55Bi-45In(mp:89℃)、27Bi-73In(mp:100℃)、68Bi-32In(mp:109℃)等。其中,XBi-YIn意味着包含X质量%的铋和Y质量%的铟的合金。
在焊料中包含的铋-铟合金中,对于铋-铟合金中包含的铋的量,优选为27质量%~68质量%,更为优选51质量%~55质量%。优选铋-铟合金的剩余部分几乎(剩余部分的99质量%以上)都是铟。这种铋-铟合金与电极的浸润性以及连接可靠性较高且熔点低。铋-铟合金包含例如从由BiIn2、Bi3In5以及BiIn构成的组中选择的至少一种。
此外,从提高电连接的可靠性的观点出发,在焊料中包含的铋-铟合金中,对于铋-铟合金中包含的铟的量,优选为32质量%~73质量%,更为优选32质量%~49质量%,特别优选43质量%~47质量%。
在包含粘合剂和焊料的连接材料中,只要焊料的量为例如5质量%~80质量%即可。通过将焊料的量设定在上述范围,能够容易同时实现第1电极与第2电极之间的高的连接可靠性、可靠地确保相邻的电极间的绝缘。
(第2工序)
本工序包括:准备具有第1电极的第1电路部件、具有第2电极的第2电路部件的第2A工序;和以第1电极与第2电极隔着连接材料而对置的方式来配置第1电路部件和第2电路部件的第2B工序。
(第2A工序)
例如,准备具备第1主面的第1电路部件、和具备第2主面的第2电路部件,其中,该第1主面具有以规定的间距排列的多个第1电极,该第2主面具有以规定的间距排列的多个第2电极。
(第1电路部件)
第1电路部件没有特别限定,例如可以是电视机、平板电脑、智能手机、可穿戴设备等具备的显示面板中使用的透明基板。透明基板也可以是半透明的。作为透明基板,可列举玻璃基板以及薄膜状基板。薄膜状基板以具有透明性的树脂薄膜来形成。作为具有透明性的树脂薄膜,可以是聚对苯二甲酸乙二醇酯(PET)、聚碳酸酯(PC)、聚萘二甲酸乙二醇酯(PEN)等的薄膜。
在第1电路部件是透明基板的情况下,对第1电极使用透明电极。透明电极只要是包含铟和锡的氧化物即可,也可以包含铟及锡以外的微量的第三金属元素。透明电极的代表例是所谓的氧化铟锡或者掺杂锡的氧化铟(IndiumTinOxide(ITO))电极。
(第2电路部件)
第2电路部件没有特别限定,可以是例如半导体芯片、电子部件封装件、薄膜基板、连接器等。
第2电极没有特别限定,可以是包含例如金、铂、铜、镍、钯、各种焊料等的金属电极。形成金属电极的焊料可以是包含例如锡、银、铋、铟、镍、铜等的焊料。
(凸块)
可以在第1电极以及第2电极的至少一方设置凸块。此时,优选凸块的维氏硬度大于焊料的维氏硬度。由此,在第1按压工序中,凸块与电极之间或者凸块之间能够容易捕获熔融前的焊料的粒子,也容易获得锚定效果。维氏硬度通过基于JIS Z 2244的测量方法来求出。
优选凸块的维氏硬度在20Hv以上,焊料的维氏硬度小于20Hv。更优选凸块的维氏硬度在22Hv以上,焊料的维氏硬度小于18Hv。
优选凸块至少在表面含有金。由此,能够容易得到维氏硬度在20Hv以上的凸块。此外,也优选包含在表面具有含有焊料的覆盖层的铜的凸块。作为覆盖层中包含的焊料,优选锡-银-铜合金。
(第2B工序)
在本工序中,以第1电极与第2电极隔着连接材料而对置的方式来配置第1电路部件和第2电路部件。
例如,在使用具备具有以规定的间距排列的多个第1电极的第1主面的第1电路部件、具备具有以规定的间距排列的多个第2电极的第2主面的第2电路部件的情况下,在覆盖第1电路部件的第1主面的第1电极的至少一部分的区域(以下称为第1连接区域)配置连接材料。如果连接材料是含有未固化或者半固化状态的热固化性树脂、未固化的光固化性树脂的糊膏状,则只要利用印刷装置、分配器、喷墨喷嘴等在第1连接区域涂敷连接材料即可。如果连接材料是薄膜状或者带状,则只要从基材揭下切割为规定形状的该薄膜并压接于第1连接区域即可。这种操作通过例如公知的贴带装置进行。再有,可以在覆盖第2电路部件的第2主面的第2电极的至少一部分的区域(第2连接区域)配置连接材料,也可以配置在第1以及第2连接区域的双方。由此,得到第1电路部件和第2电路部件被对置配置的层叠构造。
(第3工序)
在本工序中,一边对连接材料加热,一边对第1电路部件和第2电路部件进行压接。在第3工序中,可以使用例如用于按压的工具将第2电路部件按压至第1电路部件,也可以将第1电路部件按压至第2电路部件。例如使用用于加热的工具对第1电路部件以及/或者第2电路部件进行加热,来进行连接材料的加热。用于按压的工具也可以兼用作用于加热的工具。
第3工序具有以第1压力来按压焊料的工序(第1按压工序)、和继第1按压工序之后以第2压力按压焊料的工序(第2按压工序)。
(第1按压工序)
在第1按压工序中,在连接材料的温度达到焊料的熔点之前,以第1压力对焊料进行按压来使其变形之后,将按压焊料的压力变更为比第1压力小的第2压力。
在变更为第2压力之前,按压熔融前的焊料的压力可以在达到规定压力之后恒定,也可以在规定范围内变动。其中,在使按压熔融前的焊料的压力变动的情况下,第1压力是指第1按压工序中的最大压力。第1压力只要是使熔融前的焊料在电极间没有被过度地挤压、在某种程度上变形的状态下可被捕获的压力即可。
从第1压力变更为第2压力是指,使按压熔融前的焊料的压力从第1压力(最大压力)降低到熔融的焊料在电极间没有被过度挤压而能够适度浸润扩散的压力。
在通过加热导致粘合剂的粘度下降而粘合剂从第1电极与第2电极之间向其周围开始流动之前,进行第1按压工序。因此,能够抑制伴随着粘合剂的流动而焊料从第1电极与第2电极之间向其周围被挤出的情况。由此,即便在第1电极与第2电极的连接面积较小的情况下,也能够在第1电极与第2电极之间高效地捕获充分的量的焊料。
在第1按压工序中,粘合剂是开始流动之前的粘度高的状态。因此,为了在电极间捕获熔融之前的焊料,以高于第2压力的第1压力来按压粘度高的粘合剂。此时,由于焊料未熔融,因此即便以高于第2压力的第1压力进行按压,焊料也不会被过度挤压,能够在某种程度上变形的状态下捕获焊料。
第1压力可以小于使用包含树脂粒子等的各向异性导电性粘合剂的情况。由于电极与焊料的电连接并不是基于接触来实现的,而是通过熔融的焊料浸润扩散至电极来实现的,因此不需要高的压力。由于第1压力较低,因此即便在连接较薄且强度低的电路部件的情况下,也不易产生电路部件的弯曲等的不良情况,能够确保对于电路部件的连接的高可靠性。
优选第1压力为15MPa~30MPa,更为优选15MPa~20MPa。如果第1压力为15MPa以上,则能够更为可靠地捕获焊料(特别是铋-铟合金)的捕获率。如果第1压力为30MPa以下,则不会对焊料(特别是铋-铟合金)过度挤压,能够在某种程度上变形的状态下容易捕获焊料。此外,即便是电路部件较薄、其强度较低的情况下,也能够更为可靠地抑制电路部件的弯曲等的不良情况的发生。
由于包含铋-铟合金的焊料比较柔软,因此即便是第1压力为20MPa以下的低压力,也能够在使熔融前的焊料适度变形的状态下容易且可靠地捕获。如果第1压力为20MPa以下,则能够显著地抑制电路部件的弯曲等不良情况的发生。
由于在通过加热导致的粘合剂的粘度降低而粘合剂开始流动之前进行第1按压工序,因此较之第2按压工序,在非常短的时间内进行第1按压工序。由此,第1按压工序在连接材料几乎未被加热的状态下或者刚刚被加热之后结束。因此,在第1按压工序中,对电路部件几乎不会施加因加热而引起的热应力。
由于施加第1压力的时间非常短,因此即便在电路部件较薄、其强度低的情况下,也能够抑制电路部件的弯曲等不良情况的发生。
优选施加第1压力的时间为5秒以下。如果施加第1压力的时间为5秒以下,则即便是电路部件较薄、其强度较低的情况下,也能够更为可靠地抑制电路部件的弯曲等不良情况的发生。施加第1压力的时间更为优选1秒以下。
(第2按压工序)
在第2按压工序中,一边以第2压力按压焊料,一边将粘合材料加热至焊料的熔点以上,从而使焊料熔融。由此,能够使熔融的焊料在电极间浸润扩散。由于第1按压工序中在电极间确保了充分的量的焊料,因此即便在电极间的连接面积小的情况下,也能够使焊料在电极间充分地浸润扩散。
如果第2压力是熔融的焊料在电极间没有被过度地挤压而能够适度地浸润扩散的压力,则在达到规定压力之后可以为恒定,也可以在规定范围内变动。
由于施加于电路部件的第2压力非常低,因此即便在电路部件较薄、其强度较低的情况下,也能够抑制电路部件的弯曲等不良情况的发生。此外,在以小于第1压力的压力按压熔融的焊料的情况下,相邻的电极间的短路等不良情况也被抑制。
在第2按压工序中,优选通过加热使得粘合剂的粘度下降至粘合剂可流动的程度。由此,能够将第2压力设定得更低。
优选第2压力为第1压力的40%以下。如果第2压力为第1压力的40%以下,则能够更为可靠地抑制熔融的焊料被过度挤压而引起的不良情况的发生。此外,也能够更为可靠地抑制电路部件的弯曲等不良情况的发生。更为优选第2压力是第1压力的25%以下。
更为优选第2压力是第1压力的3%以上。如果第2压力是第1压力的3%以上,则在第1电极与第2电极之间熔融的焊料的浸润扩散被促进。第2压力更为优选是第1压力的6%以上,进而优选是10%以上。
优选第2压力为0.5MPa~10MPa,更为优选0.5MPa~4MPa,特别优选1MPa~3MPa左右。由此,相比使用包含树脂粒子等的各向异性导电性粘合剂的情况,能够飞跃式降低施加于电路部件的压力。此外,由于焊料(特别是铋-铟合金)处于熔融,因此即便不对电路部件施加非常高的压力,由于电极与焊料之间的浸润,也能够容易确保电连接。其中,由于包含铋含有量为27质量%~68质量%的铋.铜合金的焊料与电极之间的浸润性优异,因此适合于将第2压力设为4MPa以下的低压力的情况。
施加第2压力的时间没有特别限定,但从制造成本方面考虑,期望为0.5秒~10秒左右,进而期望为1秒~5秒左右。通过以短时间完成第2压力的施加,从而能够更为可靠地抑制施加于电路部件的热应力、电路部件的不良情况。
在第2按压工序中,只要加热温度是连接材料中包含的焊料的熔点以上即可,优选是熔点以上且熔点+10℃以下的温度。例如,在焊料中包含的铋-铟合金的熔点为88℃~90℃的情况下,加热温度是90℃~100℃即可。具体而言,包含铋含有量为51质量%~55质量%的铋-铟合金的焊料的熔点是85℃~89℃,可将第2按压工序中的加热温度设为90℃~100℃。
在粘合剂包含热固化性树脂的情况下,优选第2按压工序中的加热温度高于热固化性树脂的固化反应进展的温度。由此,在第2按压工序中,能够使热固化性树脂的固化的至少一部分进展。因此,能够省略或者缩短后固化(after cure)。
再有,在粘合剂包含热可塑性树脂的情况下,第2按压工序中的加热温度只要高于热可塑性树脂熔融的温度即可。
在此,图1中表示第3工序(热压接时)中的连接材料的温度分布图、和施加于焊料的压力分布图的一例。在图1中,实线表示压力分布图,单点划线表示温度分布图。以下,对利用可同时进行按压和加热的工具将第2电路部件向第1电路部件按压来进行热压接的情况进行说明。
第1按压工序在将被加热的工具碰到第2电路部件时开始,从该瞬间起,连接材料的温度通过加热而逐渐上升。其中,直至在时间点t1压力达到最大(第1压力P1)为止的时间较短,在时间点t1处连接材料的温度比焊料的熔点T1充分低。此时,由于粘合剂几乎不流动,因此在第1电极与第2电极之间,熔融之前的固体的焊料被补充较多,对固体的焊料施加最大的第1压力P1。之后,在从时间点t1至t2的期间,压力从P1下降至P2(第2压力)(以上称为第1按压工序)。然后,在施加于焊料的压力成为P2之后的时间点t3,连接材料的温度达到焊料的熔点T1。之后,连接材料被加热至比焊料的熔点T1高的温度T2(以上称为第2按压工序)。在时间点t3以后,熔融焊料在电极浸润扩散,在加热结束时,焊料固化从而形成连接可靠性高的焊料部。
图2中表示第1按压工序中的连接材料1的状态的一例。
连接材料1包含粘合剂2和在粘合剂2中分散的焊料3。被施加了最大的第1压力时的粘合剂(树脂组成物)2几乎不流动。由此,在第1电路部件11的第1电极12与设置于第2电路部件21的第2电极22的凸块23之间所存在的焊料粒子3(本公开所涉及的焊料的一例)能够原样地留在第1电极12与凸块23之间。因此,即便在第1电极12与凸块23的连接面积小的情况下,第1电极12与凸块23之间也高效地捕获焊料粒子3。
在粘合剂包含热固化性树脂时,也可以在第2按压工序中粘合剂的固化反应的进展不充分的情况下,进行后固化。
通过粘合剂的固化,形成将第1电路部件与第2电路部件粘合的树脂部。例如,在使用具有具备以规定的间距排列的多个第1电极的第1主面的第1电路部件、具有具备以规定的间距排列的多个第2电极的第2主面的第2电路部件的情况下,只要树脂部将第1主面与第2主面粘合,并且形成为覆盖焊料部的至少一部分即可。由此,焊料部被加强,连接构造的强度得以提高。此外,即便在电极间的间距较窄的情况下,也容易确保相邻的电极间的绝缘。
本公开所涉及的电路部件的连接方法作为利用包含树脂粒子等的各向异性导电性粘合剂的技术的代替技术是有用的,在形成包含电极尺寸较小的电路部件的连接构造的情况下,例如制造平板电脑、智能手机等所具备的小型的液晶的情况下尤其有用。
Claims (10)
1.一种电路部件的连接方法,包括:
第1工序,准备连接材料,该连接材料包含粘合剂以及分散在所述粘合剂中的焊料;
第2工序,准备具有第1电极的第1电路部件和具有第2电极的第2电路部件,以所述第1电极与所述第2电极隔着所述连接材料而对置的方式配置所述第1电路部件和所述第2电路部件;和
第3工序,一边对所述连接材料进行加热,一边对所述第1电路部件与所述第2电路部件进行压接,
所述第3工序具有:在所述连接材料的温度达到所述焊料的熔点之前进行的第1按压工序、以及继所述第1按压工序之后的第2按压工序,
在所述第1按压工序中,在以第1压力按压所述焊料使其变形之后,将按压所述焊料的压力变更为小于所述第1压力的第2压力,
在所述第2按压工序中,以所述第2压力按压所述焊料。
2.根据权利要求1所述的电路部件的连接方法,其中,
所述第1压力为15MPa~30MPa。
3.根据权利要求1所述的电路部件的连接方法,其中,
所述第2压力为所述第1压力的40%以下。
4.根据权利要求1所述的电路部件的连接方法,其中,
所述粘合剂包含热固化性树脂,
所述热固化性树脂的固化反应进展的温度比所述焊料的熔点高。
5.根据权利要求1所述的电路部件的连接方法,其中,
在所述第1电极以及所述第2电极的至少一方设置凸块,
所述凸块的维氏硬度大于所述焊料的维氏硬度。
6.根据权利要求5所述的电路部件的连接方法,其中,
所述凸块的维氏硬度在20Hv以上,
所述焊料的维氏硬度小于20Hv。
7.根据权利要求5所述的电路部件的连接方法,其中,
所述凸块至少在表面含有金。
8.根据权利要求1所述的电路部件的连接方法,其中,
所述焊料包含铋-铟合金。
9.根据权利要求8所述的电路部件的连接方法,其中,
在所述铋-铟合金中,所述铋-铟合金中包含的铋的量为27质量%~68质量%。
10.根据权利要求8所述的电路部件的连接方法,其中,
在所述铋-铟合金中,所述铋-铟合金中包含的铋的量为51质量%~55质量%。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016096269A JP6587107B2 (ja) | 2016-05-12 | 2016-05-12 | 回路部材の接続方法 |
JP2016-096269 | 2016-05-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107369631A true CN107369631A (zh) | 2017-11-21 |
CN107369631B CN107369631B (zh) | 2022-02-22 |
Family
ID=60297800
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710315343.0A Active CN107369631B (zh) | 2016-05-12 | 2017-05-05 | 电路部件的连接方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10464153B2 (zh) |
JP (1) | JP6587107B2 (zh) |
CN (1) | CN107369631B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030189260A1 (en) * | 2002-04-03 | 2003-10-09 | Ho-Ming Tong | Flip-chip bonding structure and method thereof |
US20100195292A1 (en) * | 2009-01-30 | 2010-08-05 | Hitachi, Ltd. | Electronic member, electronic part and manufacturing method therefor |
US20120255766A1 (en) * | 2010-06-15 | 2012-10-11 | Sony Chemical & Information Device Corporation | Production method of connection structure |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3417110B2 (ja) | 1994-12-30 | 2003-06-16 | カシオ計算機株式会社 | 電子部品の接続方法 |
JP3564944B2 (ja) * | 1997-05-22 | 2004-09-15 | 松下電器産業株式会社 | チップの実装方法 |
JP2001198692A (ja) * | 2000-01-12 | 2001-07-24 | Matsushita Electric Ind Co Ltd | 光モジュールの接合材料およびこれを用いる光学ヘッド |
JP4036786B2 (ja) * | 2003-04-24 | 2008-01-23 | 唯知 須賀 | 電子部品実装方法 |
JPWO2008023452A1 (ja) * | 2006-08-25 | 2010-01-07 | 住友ベークライト株式会社 | 接着テープ、接合体および半導体パッケージ |
US8343383B2 (en) * | 2007-03-12 | 2013-01-01 | Senju Metal Industry Co., Ltd. | Anisotropic conductive material |
JP4998520B2 (ja) * | 2009-06-15 | 2012-08-15 | 住友電気工業株式会社 | 電極の接続方法、電極の接続構造及び電子機器 |
SG177449A1 (en) * | 2009-07-17 | 2012-02-28 | Sumitomo Bakelite Co | Method for manufacturing electronic component, and electronic component |
KR101345694B1 (ko) * | 2011-03-11 | 2013-12-30 | 옵토팩 주식회사 | 파이버, 파이버 집합체 및 이를 포함하는 접착제 |
US9756728B2 (en) * | 2012-08-31 | 2017-09-05 | Panasonic Intellectual Property Management Co., Ltd. | Component-mounted structure |
JP6187918B2 (ja) * | 2015-04-23 | 2017-08-30 | パナソニックIpマネジメント株式会社 | 回路部材の接続構造、接続方法および接続材料 |
-
2016
- 2016-05-12 JP JP2016096269A patent/JP6587107B2/ja active Active
-
2017
- 2017-05-01 US US15/582,794 patent/US10464153B2/en active Active
- 2017-05-05 CN CN201710315343.0A patent/CN107369631B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030189260A1 (en) * | 2002-04-03 | 2003-10-09 | Ho-Ming Tong | Flip-chip bonding structure and method thereof |
US20100195292A1 (en) * | 2009-01-30 | 2010-08-05 | Hitachi, Ltd. | Electronic member, electronic part and manufacturing method therefor |
US20120255766A1 (en) * | 2010-06-15 | 2012-10-11 | Sony Chemical & Information Device Corporation | Production method of connection structure |
CN102939645A (zh) * | 2010-06-15 | 2013-02-20 | 索尼化学&信息部件株式会社 | 连接结构体的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US10464153B2 (en) | 2019-11-05 |
CN107369631B (zh) | 2022-02-22 |
JP2017204586A (ja) | 2017-11-16 |
JP6587107B2 (ja) | 2019-10-09 |
US20170326663A1 (en) | 2017-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3665579B2 (ja) | 電気装置製造方法 | |
KR101355709B1 (ko) | 접속 구조체의 제조 방법 및 그로부터 제조된 접속 구조체 | |
JP2010226140A5 (zh) | ||
CN106068059B (zh) | 电路部件的连接结构、连接方法以及连接材料 | |
CN101432861B (zh) | 连接构造体及其制造方法 | |
CN101939832A (zh) | 热机械的倒焊芯片的模片焊接 | |
KR101886909B1 (ko) | 이방성 도전 접속 재료, 접속 구조체, 접속 구조체의 제조 방법 및 접속 방법 | |
KR20090052300A (ko) | 전자 부품 실장용 접착제 및 전자 부품 실장 구조체 | |
CN104637826A (zh) | 半导体装置的制造方法 | |
JP2002026070A (ja) | 半導体装置およびその製造方法 | |
CN104221223A (zh) | 各向异性导电片材以及使用其的电极接合方法 | |
CN107454741B (zh) | 导电粒子、电路部件的连接材料、连接构造以及连接方法 | |
NO321429B1 (no) | Halvleder enhetpakke, fremgangsmate ved pakking av halvlederenhet, og innkapsling for bruk ved halvlederenhet pakking | |
CN107369631A (zh) | 电路部件的连接方法 | |
CN107452706B (zh) | 电路部件的连接构造以及连接方法 | |
JP6474008B2 (ja) | 接続材料 | |
KR102106996B1 (ko) | 솔더입자를 포함한 시트를 사용한 부품 실장 방법 | |
JP5065657B2 (ja) | 電子装置およびその製造方法 | |
JP6536968B2 (ja) | 接続材料 | |
JP2015167193A (ja) | 金属微粉末ペーストを用いた接合方法 | |
KR101214061B1 (ko) | 저가형 이방 도전성 페이스트를 사용한 전기적 접합 구조물의 제조방법 | |
TW202349521A (zh) | 電路連接結構體的製造方法及電路連接裝置 | |
CN103855043A (zh) | 半导体封装倒装焊接方法 | |
JPH1041348A (ja) | 電子部品と基板との接続ユニット | |
JP2010080698A (ja) | 半導体素子実装基板とその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |