CN107367713A - Manufacturing and processing method of front-end module of K2 waveband receiver - Google Patents
Manufacturing and processing method of front-end module of K2 waveband receiver Download PDFInfo
- Publication number
- CN107367713A CN107367713A CN201710473433.2A CN201710473433A CN107367713A CN 107367713 A CN107367713 A CN 107367713A CN 201710473433 A CN201710473433 A CN 201710473433A CN 107367713 A CN107367713 A CN 107367713A
- Authority
- CN
- China
- Prior art keywords
- component
- processing method
- end module
- solder
- module according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention discloses a manufacturing and processing method of a front-end module of a K2 waveband receiver, which comprises the following steps: step 1: manufacturing and installing a radio frequency insulator assembly; step 2: bonding the insulator with a conductive adhesive; and step 3: installing a Rogers circuit board and an SMP connector; and 4, step 4: welding components and manufacturing a feed circuit board assembly; and 5: manufacturing eutectic components U1, U2 and U3; step 6: sequentially mounting eutectic components on the cavity; and 7: the conductive adhesive is bonded with the filter; and 8: welding by electric fitting; and step 9: plasma cleaning; step 10: bonding with gold wires; step 11: and (7) sealing the cover. The method can improve the product percent of pass and provides powerful guarantee for batch production.
Description
Technical field
The present invention relates to microwave module to make processing technology field, more particularly to the system of K2 band receiver front-end modules
Make processing method.
Background technology
Receiver is the important component of radar, after the main function of radar receiver is amplification and processing radar emission
The required echo being reflected back, receiver front end are the front ends of radar processing echo-signal, and its performance directly affects follow-up electricity
The performance of road performance, and influence the performance indications of radar complete machine.
Grope by test of many times and technique, and with this process produce product by test, environmental test and on
Machine is taken a flight test, and every technical performance index is satisfied by machine requirement, and this fabrication processing is simple, and equipment investment is small, is applicable small
Batch production.
The content of the invention
It is an object of the invention to provide a kind of making processing method of K2 band receivers front-end module, this method can carry
High production yield, powerful guarantee is provided for mass production.
To achieve these goals, the invention provides a kind of making processing method of K2 band receivers front-end module,
Processing method includes：Step 1：Make and install RF isolation sub-component；Step 2：Use conductive adhesive insulator；Step
3：Rogers circuit boards and SMP joints are installed；Step 4：Component welds and made feed circuit board component；Step 5：
Make eutectic component U1, U2, U3；Step 6：Eutectic component is in turn mounted on cavity；Step 7：Conductive adhesive filters
Device；Step 8：Denso welds；Step 9：Plasma cleaning；Step 10：Gold wire bonding；Step 11：Capping.
Preferably, step 1 includes：The long end of RF isolation and short end length are trimmed to 1.6-1.8mm and 0.4- respectively
0.6mm, the long end of RF isolation is installed in sleeve and heated, carry out obtaining RF isolation after the completion of solder paste melts sintering
Component；Spot printing two encloses 217 DEG C of soldering paste on the outside of RF isolation sub-component, is subsequently mounted on cavity, and to RF isolation subgroup
Part is sintered at a temperature of 255-265 DEG C.
Preferably, feed insulator one layer of conducting resinl of outer application is included in step 2 to be installed on cavity.
Preferably, step 3 is included in Rogers back of circuit board one layer of 183 DEG C of solder(ing) paste of coating, outside feed insulator
Side spot printing two enclose 183 DEG C of solder(ing) pastes, on the outside of SMP joints spot printing four enclose 183 DEG C of solder(ing) pastes, and by Rogers circuit boards, feed
Insulator and SMP joints are installed on cavity, and briquetting is pressed on Rogers circuit boards, cover cover plate and fixation.
Preferably, in step 4,183 DEG C of solder sticks are melted by resistance R1, electric capacity C1~C6, amplifier chip with electric iron
U6 and wave filter U7 are welded on Rogers circuit boards, with point gum machine on the pad of component to be pasted 217 DEG C of solder(ing) pastes of spot printing.
Preferably, in step 5, it is in temperature with golden tinol by amplifier chip CGY2121 and four chip capacities
Eutectic is on molybdenum copper carrier on 290-310 DEG C of manual eutectic platform.
Preferably, in step 6 install eutectic component before on position to be installed 160 DEG C of solder(ing) pastes of spot printing.
Preferably, in step 7, one layer of conducting resinl is coated in filter cavity body region to be installed.
Preferably, in step 8,183 DEG C of solder sticks are melted by RF isolation sub-component, feed insulator and side with electric iron
Edge pad solder is connected to together；Plain cushion is mixed with screw, spring washer on the cavity back side, melts feed circuit plate with electric iron
Melt 183 DEG C of solder sticks and welded insulator is fed with circuit board with wire.
Preferably, argon purge is carried out including the use of plasma cleaner in step 9, wherein, cleaning radio-frequency power is
500W, scavenging period 3min.
According to above-mentioned technical proposal, the present invention passes through step 1：Make and install RF isolation sub-component；Step 2：Make
With conductive adhesive insulator；Step 3：Rogers circuit boards and SMP joints are installed；Step 4：Component is welded and made
Feed circuit board component；Step 5：Make eutectic component U1, U2, U3；Step 6：Eutectic component is in turn mounted on cavity；Step
Rapid 7：Conductive adhesive wave filter；Step 8：Denso welds；Step 9：Plasma cleaning；Step 10：Gold wire bonding；Step 11：
Capping.This method can improve product qualification rate, and powerful guarantee is provided for mass production.
Other features and advantages of the present invention will be described in detail in subsequent specific embodiment part.
Brief description of the drawings
Accompanying drawing is for providing a further understanding of the present invention, and a part for constitution instruction, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is receiver front end module front installation diagram in the present invention；
Fig. 2 is receiver front end module backside installation diagram in the present invention；
Fig. 3 is chips eutectic figure of the present invention.
Description of reference numerals
The Rogers circuit boards of 1 cavity 2
3 RF isolation sub-components 4 feed insulator DC2516-0.7
5 SMP joints 6 feed insulator DC1616-0.45
7 feed circuit plates
Embodiment
The embodiment of the present invention is described in detail below in conjunction with accompanying drawing.It should be appreciated that this place is retouched
The embodiment stated is merely to illustrate and explain the present invention, and is not intended to limit the invention.
In the present invention, in the case where not making opposite explanation, " up and down, front and rear inside and outside " etc. is included in term
The noun of locality only represents orientation of the term under normal service condition, or be skilled artisan understands that be commonly called as, without should
It is considered as the limitation to the term.In following embodiment explanation, feed insulator 4 represents feed insulator
DC2516-0.7, feed insulator 6 represent feed insulator DC1616-0.45.
Referring to the K2 band receiver front-end modules shown in Fig. 1-3, the making of the K2 band receiver front-end modules is processed
Method includes：Step 1：Make and install RF isolation sub-component；Step 2：Use conductive adhesive insulator；Step 3：Peace
Fill Rogers circuit boards and SMP joints；Step 4：Component welds and made feed circuit board component；Step 5：Make
Eutectic component U1, U2, U3；Step 6：Eutectic component is in turn mounted on cavity；Step 7：Conductive adhesive wave filter；Step
Rapid 8：Denso welds；Step 9：Plasma cleaning；Step 10：Gold wire bonding；Step 11：Capping.
The implementation of Pass through above-mentioned technical proposal, product qualification rate is improved, also provides powerful guarantee for mass production.
In this embodiment, the long end of RF isolation (RF2516) and short end length are trimmed to 1.6- respectively
1.8mm, 0.4-0.6mm, in sleeve one end, inwall coats one layer of golden tinol (Au80Sn20), then by the long end of RF isolation
It is installed in sleeve, until the entire length of RF isolation sub-component 3 is 3.5-3.7mm, is then placed on 300 DEG C together manually altogether
On brilliant warm table, solder paste melts are carried out, RF isolation sub-component 3 is obtained after the completion of sintering.In the points outside of RF isolation sub-component 3
Two 217 DEG C of soldering paste (OM338) of circle are applied, K2 band receiver front-end modules front installation diagram 1 is then compareed, is installed to cavity 1
On relevant position；Place it in temperature to be sintered for 255-265 DEG C of heating platform, when tin cream starts to melt, with tweezers gently
Stir, make commissure soldering paste light full, removed after the completion of sintering, natural cooling.
In this embodiment, one layer of conducting resinl (H20E) of insulator 6 (DC1616-0.45) outer application is being fed, with
K2 band receiver front-end modules front installation diagram 1 is compareed afterwards, is installed on the relevant position of cavity 1；Placing it in temperature is
Conductive adhesive curing is carried out in 115-125 DEG C of baking oven, hardening time is 60~120min.
In this embodiment, in 183 DEG C of a thin layer of solder(ing) pastes of the backside coating of Rogers circuit boards 2, then control
K2 band receiver front-end modules front installation diagram 1, is installed on cavity 1；In feed insulator 4 (DC2516-0.7) points outside
2 183 DEG C of solder(ing) pastes of circle are applied, K2 band receiver front-end modules front installation diagram 1 is then compareed, is installed on cavity 1；In SMP
The outside spot printing 4 of joint 5 encloses 183 DEG C of solder(ing) pastes, then compares K2 band receiver front-end modules front installation diagram 1, is installed to chamber
On the relevant position of body 1, SMP joint inner cores are placed in the middle with Rogers circuit boards microstrip lines；Briquetting is pressed in Rogers circuit boards 2
On, cover plate is covered, is screwed, is placed on 215-225 DEG C of heating platform and is sintered together, starts to melt in soldering paste
When, constantly screw is screwed；SMP joints 5 and feed insulator 4 (DC2516-0.7) are gently stirred with tweezers, welds commissure
Cream light is full, is removed after the completion of sintering, natural cooling.
In this embodiment, according to K2 band receiver front-end modules front installation diagram 1,183 DEG C are melted with electric iron
Resistance R1, electric capacity C1~C6, amplifier chip U6 and wave filter U7 are welded on Rogers circuit boards 2 by solder stick, have been welded
Into after cooling, it is placed in the beaker for fill absolute ethyl alcohol and is cleaned by ultrasonic, is then scrubbed using hairbrush, naturally dry.
According to feed circuit board component installation diagram 2, with point gum machine on the pad of component to be pasted 217 DEG C of solder(ing) pastes of spot printing, correct patch
Component is filled, then places it on 235-245 DEG C of heating platform and sinters, after sintering completes cooling, is placed on and fills nothing
It is cleaned by ultrasonic in the beaker of water-ethanol, is then scrubbed using hairbrush, naturally dry.
In this embodiment, according to chip eutectic Fig. 3, by amplifier chip CGY2121, the golden tin of 4 chip capacities
Soldering paste is in temperature on eutectic on 290-310 DEG C of manual eutectic platform to molybdenum copper carrier, during eutectic, chip and chip are electric
Hold needs friction welding (FW) with molybdenum copper carrier, chip is fully welded with carrier, chip capacity and carrier, so far, obtains eutectic component U1.
Chip eutectic Fig. 3 is compareed, according to step 1) method, eutectic amplifier chip 2069, obtains eutectic component U2.Compare chip eutectic
Fig. 3, according to step 1) method, eutectic mixer chip H260, obtain eutectic component U4.
In this embodiment, after melts soldering tin, control K2 band receiver front-end modules front installation diagram 1, by eutectic
Component U1, U2, U3 are friction welded on cavity 1, and natural cooling is removed after the completion of welding.
In this embodiment, one layer of conducting resinl (H20E) (totally 2 at) is coated in filter cavity body region to be installed,
Then control K2 band receiver front-end modules front installation diagram 1, chamber is installed to by the first wave filter U3 and the second wave filter U5
On the relevant position of body 1；Then it is that conductive adhesive curing is carried out in 115-125 DEG C of baking oven cavity 1 to be placed on into temperature, during solidification
Between be 60~120min.
In this embodiment, according to K2 band receiver front-end modules front installation diagram 1,183 DEG C are melted with electric iron
Solder stick by RF isolation sub-component, feed insulator be connected to edge pad solder together with (totally 3 at)；According to K2 band receptions
Machine front-end module back side installation diagram 2, with M2x4 stainless steel cross recess cheese head screws mix plain cushion, spring washer installs feed circuit plate
On the cavity back side, melt 183 DEG C of solder sticks with electric iron and will feed insulator and circuit board and (totally 9 at) is welded with wire.
In this embodiment, using YES-G500 plasma cleaners, argon purge is selected, with reference to cleaning parameterses：Penetrate
Frequency power 500W, plasma cleaning time 3min.Using spun gold press welder 7476E, with reference to bonding parameter：Chip is to chip capacity
First point of ultrasonic power and second point are respectively 138,163, and first point of ultrasonic time and second point are respectively 38,70, tailfiber
For 30；Positive first cover plate and back cover plate are fixed with M2x4 sunk screws, and positive second cover plate is carried out with 118 DEG C of indium tin solders
Soldering.
The preferred embodiment of the present invention is described in detail above in association with accompanying drawing, still, the present invention is not limited to above-mentioned reality
The detail in mode is applied, in the range of the technology design of the present invention, a variety of letters can be carried out to technical scheme
Monotropic type, these simple variants belong to protection scope of the present invention.
It is further to note that each particular technique feature described in above-mentioned embodiment, in not lance
In the case of shield, can be combined by any suitable means, in order to avoid unnecessary repetition, the present invention to it is various can
The combination of energy no longer separately illustrates.
In addition, various embodiments of the present invention can be combined randomly, as long as it is without prejudice to originally
The thought of invention, it should equally be considered as content disclosed in this invention.
Claims (10)
1. a kind of making processing method of K2 band receivers front-end module, it is characterised in that the processing method includes：Step 1：
Make and install RF isolation sub-component；Step 2：Use conductive adhesive insulator；Step 3：Rogers circuit boards are installed
And SMP joints；Step 4：Component welds and made feed circuit board component；Step 5：Making eutectic component U1, U2,
U3；Step 6：Eutectic component is in turn mounted on cavity；Step 7：Conductive adhesive wave filter；Step 8：Denso welds；Step
Rapid 9：Plasma cleaning；Step 10：Gold wire bonding；Step 11：Capping.
2. the making processing method of K2 band receivers front-end module according to claim 1, it is characterised in that step 1
Including：The long end of RF isolation and short end length are trimmed to 1.6-1.8mm and 0.4-0.6mm respectively, RF isolation is long
End is installed in sleeve and heated, and carries out obtaining RF isolation sub-component after the completion of solder paste melts sintering；
Spot printing two encloses 217 DEG C of soldering paste on the outside of RF isolation sub-component, is subsequently mounted on cavity, and to RF isolation sub-component
It is sintered at a temperature of 255-265 DEG C.
3. the making processing method of K2 band receivers front-end module according to claim 1, it is characterised in that step 2
In be included in feed insulator one layer of conducting resinl of outer application be installed on cavity.
4. the making processing method of K2 band receivers front-end module according to claim 1, it is characterised in that step 3
It is included in Rogers back of circuit board and coats one layer of 183 DEG C of solder(ing) paste, spot printing two encloses 183 DEG C of scolding tin on the outside of feed insulator
Cream, spot printing four encloses 183 DEG C of solder(ing) pastes on the outside of SMP joints, and Rogers circuit boards, feed insulator and SMP joints are installed
In on cavity, briquetting is pressed on Rogers circuit boards, covers cover plate and fixation.
5. the making processing method of K2 band receivers front-end module according to claim 1, it is characterised in that step 4
In, melt 183 DEG C of solder sticks with electric iron and be welded to resistance R1, electric capacity C1~C6, amplifier chip U6 and wave filter U7
On Rogers circuit boards, with point gum machine on the pad of component to be pasted 217 DEG C of solder(ing) pastes of spot printing.
6. the making processing method of K2 band receivers front-end module according to claim 1, it is characterised in that step 5
In, by amplifier chip CGY2121 and four chip capacities with golden tinol on the manual eutectic platform that temperature is 290-310 DEG C
Eutectic is on molybdenum copper carrier.
7. the making processing method of K2 band receivers front-end module according to claim 1, it is characterised in that step 6
It is middle installation eutectic component before on position to be installed 160 DEG C of solder(ing) pastes of spot printing.
8. the making processing method of K2 band receivers front-end module according to claim 1, it is characterised in that step 7
In, one layer of conducting resinl is coated in filter cavity body region to be installed.
9. the making processing method of K2 band receivers front-end module according to claim 1, it is characterised in that step 8
In, melted with electric iron together with RF isolation sub-component, feed insulator be connected to edge pad solder by 183 DEG C of solder sticks；
Plain cushion, spring washer are mixed by feed circuit plate on the cavity back side with screw, and melting 183 DEG C of solder sticks with electric iron will
Feed insulator is welded with circuit board with wire.
10. the making processing method of K2 band receivers front-end module according to claim 1, it is characterised in that step 9
In including the use of plasma cleaner carry out argon purge, wherein, cleaning radio-frequency power is 500W, scavenging period 3min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710473433.2A CN107367713B (en) | 2017-06-21 | 2017-06-21 | Manufacturing and processing method of front-end module of K2 waveband receiver |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710473433.2A CN107367713B (en) | 2017-06-21 | 2017-06-21 | Manufacturing and processing method of front-end module of K2 waveband receiver |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107367713A true CN107367713A (en) | 2017-11-21 |
| CN107367713B CN107367713B (en) | 2020-06-12 |
Family
ID=60306233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710473433.2A Active CN107367713B (en) | 2017-06-21 | 2017-06-21 | Manufacturing and processing method of front-end module of K2 waveband receiver |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107367713B (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108039553A (en) * | 2017-12-15 | 2018-05-15 | 安徽华东光电技术研究所 | A kind of Ku wave bands one divide the manufacture craft of three power splitters |
| CN108161264A (en) * | 2017-12-01 | 2018-06-15 | 安徽华东光电技术研究所 | Manufacturing method of X-band transceiving component |
| CN108375757A (en) * | 2018-02-01 | 2018-08-07 | 深圳市华讯方舟微电子科技有限公司 | Emitting module and its mounting structure for Phased Array Antennas Transmit System |
| CN108462491A (en) * | 2017-12-01 | 2018-08-28 | 安徽华东光电技术研究所 | Local oscillator source module processing method on Ku audio range frequency synthesizers |
| CN109347450A (en) * | 2018-09-13 | 2019-02-15 | 安徽华东光电技术研究所有限公司 | A kind of processing method of Asia 20 watts of pulse power amplifiers of terahertz wave band |
| CN109661123A (en) * | 2018-12-10 | 2019-04-19 | 安徽华东光电技术研究所有限公司 | Push the production processing method of grade amplification module |
| CN109672410A (en) * | 2018-12-20 | 2019-04-23 | 安徽华东光电技术研究所有限公司 | A kind of production method of Ka wave band frequency-variable module |
| CN109688787A (en) * | 2018-12-10 | 2019-04-26 | 安徽华东光电技术研究所有限公司 | Frequency range pre-amplifier module making method |
| CN109769390A (en) * | 2019-03-14 | 2019-05-17 | 安徽华东光电技术研究所有限公司 | A kind of production method of pre-amplifier module |
| CN111934077A (en) * | 2020-08-07 | 2020-11-13 | 安徽华东光电技术研究所有限公司 | Manufacturing process of Ka-band waveguide receiving module |
| CN112954913A (en) * | 2021-01-26 | 2021-06-11 | 安徽华东光电技术研究所有限公司 | Intermediate frequency module manufacturing method of K1 waveband receiver |
| CN113939109A (en) * | 2021-09-29 | 2022-01-14 | 隆扬电子(昆山)股份有限公司 | Rogers product mounting process |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003069695A3 (en) * | 2002-02-14 | 2003-11-20 | Ma Com Inc | Multilayer package for a semiconductor device |
| CN104833955A (en) * | 2015-03-09 | 2015-08-12 | 中国科学院上海微系统与信息技术研究所 | 3mm-waveband small detector front-end |
| CN106374862A (en) * | 2016-08-31 | 2017-02-01 | 安徽华东光电技术研究所 | Microwave four-channel amplifier module and manufacturing method thereof |
| CN106455356A (en) * | 2016-08-24 | 2017-02-22 | 安徽华东光电技术研究所 | Manufacturing and processing method of solid microwave source |
| CN106572607A (en) * | 2016-06-23 | 2017-04-19 | 安徽华东光电技术研究所 | Process manufacturing method of solid-state microwave source |
-
2017
- 2017-06-21 CN CN201710473433.2A patent/CN107367713B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003069695A3 (en) * | 2002-02-14 | 2003-11-20 | Ma Com Inc | Multilayer package for a semiconductor device |
| CN104833955A (en) * | 2015-03-09 | 2015-08-12 | 中国科学院上海微系统与信息技术研究所 | 3mm-waveband small detector front-end |
| CN106572607A (en) * | 2016-06-23 | 2017-04-19 | 安徽华东光电技术研究所 | Process manufacturing method of solid-state microwave source |
| CN106455356A (en) * | 2016-08-24 | 2017-02-22 | 安徽华东光电技术研究所 | Manufacturing and processing method of solid microwave source |
| CN106374862A (en) * | 2016-08-31 | 2017-02-01 | 安徽华东光电技术研究所 | Microwave four-channel amplifier module and manufacturing method thereof |
Non-Patent Citations (4)
| Title |
|---|
| A. MATTAMANA 等: "X-Band Receiver Module in Fully Depleted Silicon On Insulator Technology", 《2012 IEEE INTERNATIONAL SOI CONFERENCE (SOI)》 * |
| 曾耿华等: "低温共烧陶瓷雷达引信接收前端", 《探测与控制学报》 * |
| 李军: "X波段金属—陶瓷封装的设计", 《表面贴装技术研讨会暨电子互联与封装技术研讨会论文集》 * |
| 陈澄等: "微波组件馈电绝缘子装配工艺研究", 《电子工艺技术》 * |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108161264A (en) * | 2017-12-01 | 2018-06-15 | 安徽华东光电技术研究所 | Manufacturing method of X-band transceiving component |
| CN108462491A (en) * | 2017-12-01 | 2018-08-28 | 安徽华东光电技术研究所 | Local oscillator source module processing method on Ku audio range frequency synthesizers |
| CN108039553A (en) * | 2017-12-15 | 2018-05-15 | 安徽华东光电技术研究所 | A kind of Ku wave bands one divide the manufacture craft of three power splitters |
| CN108375757A (en) * | 2018-02-01 | 2018-08-07 | 深圳市华讯方舟微电子科技有限公司 | Emitting module and its mounting structure for Phased Array Antennas Transmit System |
| CN109347450A (en) * | 2018-09-13 | 2019-02-15 | 安徽华东光电技术研究所有限公司 | A kind of processing method of Asia 20 watts of pulse power amplifiers of terahertz wave band |
| CN109661123B (en) * | 2018-12-10 | 2021-08-27 | 安徽华东光电技术研究所有限公司 | Manufacturing and processing method of push-level amplification module |
| CN109661123A (en) * | 2018-12-10 | 2019-04-19 | 安徽华东光电技术研究所有限公司 | Push the production processing method of grade amplification module |
| CN109688787A (en) * | 2018-12-10 | 2019-04-26 | 安徽华东光电技术研究所有限公司 | Frequency range pre-amplifier module making method |
| CN109672410A (en) * | 2018-12-20 | 2019-04-23 | 安徽华东光电技术研究所有限公司 | A kind of production method of Ka wave band frequency-variable module |
| CN109672410B (en) * | 2018-12-20 | 2024-04-09 | 安徽华东光电技术研究所有限公司 | Manufacturing method of Ka-band frequency conversion module |
| CN109769390A (en) * | 2019-03-14 | 2019-05-17 | 安徽华东光电技术研究所有限公司 | A kind of production method of pre-amplifier module |
| CN111934077A (en) * | 2020-08-07 | 2020-11-13 | 安徽华东光电技术研究所有限公司 | Manufacturing process of Ka-band waveguide receiving module |
| CN112954913A (en) * | 2021-01-26 | 2021-06-11 | 安徽华东光电技术研究所有限公司 | Intermediate frequency module manufacturing method of K1 waveband receiver |
| CN113939109A (en) * | 2021-09-29 | 2022-01-14 | 隆扬电子(昆山)股份有限公司 | Rogers product mounting process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107367713B (en) | 2020-06-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107367713A (en) | Manufacturing and processing method of front-end module of K2 waveband receiver | |
| CN103551690B (en) | Manufacturing method of amplitude limiter | |
| CN106714471A (en) | Manufacturing process of S-band pulse 3-watt amplifier | |
| CN105530017B (en) | Method for manufacturing receiving front end of broadband receiving and transmitting system | |
| CN107645849B (en) | Method for manufacturing microwave excitation high-frequency module | |
| CN106535497B (en) | A kind of T/R receiving front-end module processing method | |
| CN105099370B (en) | The processing method of preposition frequency mixer | |
| CN106572607A (en) | Process manufacturing method of solid-state microwave source | |
| CN108112184B (en) | Manufacturing method of S-band 100-watt pulse power amplifier | |
| CN109688725B (en) | Manufacturing method of K1 waveband frequency source module | |
| CN106455356A (en) | Manufacturing and processing method of solid microwave source | |
| WO2021007949A1 (en) | Process method for improving welding strength of igbt module terminals | |
| CN108768304A (en) | A kind of manufacture craft of 50 watts of power amplifiers of S-band | |
| CN106341125B (en) | Coaxial medium oscillation source processing method | |
| CN110142475A (en) | It is a kind of to be fixedly welded method without tooling for high-power IGBT module | |
| CN205428913U (en) | Power semiconductor module | |
| CN107612509A (en) | The processing method of 120 watts of miniaturization high power amplifiers of L-band | |
| CN111106104A (en) | Manufacturing process of 18-28GHZ T assembly | |
| CN109755715A (en) | The production method of the airtight grade microwave switch module of Ka full frequency band | |
| CN110266279A (en) | A kind of manufacture craft of 6 watts of power amplifiers of C-band | |
| CN109688787A (en) | Frequency range pre-amplifier module making method | |
| CN111934077A (en) | Manufacturing process of Ka-band waveguide receiving module | |
| CN107395197A (en) | The making processing method in frequency of phase locking source | |
| CN104384647B (en) | For the identical welding method of extra small Schottky diode and quartz substrate thin flm circuit | |
| CN105764266A (en) | Wideband receiving and transmitting system receiving front end making method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 241000 Emshan Road, Yijiang District, Wuhu City, Anhui Province Patentee after: ANHUI HUADONG PHOTOELECTRIC TECHNOLOGY INSTITUTE Co.,Ltd. Address before: 241000 Huaxia science and Technology Park, Wuhu high tech Industrial Development Zone, Anhui Patentee before: Anhui Huadong Polytechnic Institute |