CN109672410B - Manufacturing method of Ka-band frequency conversion module - Google Patents
Manufacturing method of Ka-band frequency conversion module Download PDFInfo
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- CN109672410B CN109672410B CN201811560612.0A CN201811560612A CN109672410B CN 109672410 B CN109672410 B CN 109672410B CN 201811560612 A CN201811560612 A CN 201811560612A CN 109672410 B CN109672410 B CN 109672410B
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000005476 soldering Methods 0.000 claims abstract description 41
- 238000003466 welding Methods 0.000 claims abstract description 39
- 239000012212 insulator Substances 0.000 claims abstract description 37
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 28
- 238000004140 cleaning Methods 0.000 claims abstract description 27
- 230000005496 eutectics Effects 0.000 claims abstract description 23
- 238000009434 installation Methods 0.000 claims abstract description 11
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000002844 melting Methods 0.000 claims description 14
- 230000008018 melting Effects 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 8
- 230000004907 flux Effects 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 239000012808 vapor phase Substances 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 238000007689 inspection Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 229920000742 Cotton Polymers 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000002390 adhesive tape Substances 0.000 claims description 2
- 230000001680 brushing effect Effects 0.000 claims description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 2
- 230000035515 penetration Effects 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 3
- 238000012858 packaging process Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 13
- 230000003321 amplification Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
Abstract
The invention discloses a manufacturing method of a Ka-band frequency conversion module, which comprises the following steps: cleaning the structural part before assembly; welding the sleeve; eutectic soldering of the chip; welding a radio frequency circuit board and an insulator; welding components of the radio frequency circuit assembly; welding components of the voltage stabilizing circuit; electric installation; bonding the chip; gold wire bonding of the chip; and (5) sealing the cover. By adopting the technical scheme, the manufacturing of the Ka-band frequency conversion module is realized by means of a microelectronic group packaging process technology.
Description
Technical Field
The invention belongs to the technical field of microwave amplifiers, and particularly relates to a manufacturing method of a Ka-band frequency conversion module.
Background
The Microwave Monolithic Integrated Circuit (MMIC) circuit has the advantages of small circuit loss, low noise, wide frequency band, large dynamic range, large power, high additional efficiency and the like, and can reduce the volume, weight, price and the like of electronic equipment, thus playing an important role in military electronic equipment and civil electronic products.
Currently, microwave Monolithic Integrated Circuits (MMICs) have become important pillars for the current development of various high-tech weapons and equipment, and are widely used in various advanced tactical missiles, electronic warfare, communication systems, and various advanced phased array radars.
Disclosure of Invention
The invention aims to provide a manufacturing method of a Ka-band frequency conversion module.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
the manufacturing method of the Ka-band frequency conversion module comprises the following steps:
step 1, cleaning a structural member before assembly;
step 2, welding the sleeve;
step 3, eutectic welding of the chip;
step 4, welding the radio frequency circuit board and the insulator;
step 5, welding components of the radio frequency circuit assembly;
step 6, welding components of the voltage stabilizing circuit;
step 7, electric installation;
step 8, chip bonding;
step 9, gold wire bonding of the chip;
step 10, sealing the cover;
so far, the Ka-band frequency conversion module is manufactured.
In the step 1, structural members including the shell, the upper cover plate and the lower cover plate are cleaned.
In the step 2, welding and cleaning the radio frequency insulator and the sleeve are carried out, and whether the radio frequency insulator has a short circuit or not is simply tested.
In the step 3, eutectic bonding between the amplifier chip and the amplifier carrier and between the mixer chip and the mixer carrier is completed, respectively.
In the step 4, the sleeve assembly is welded with the shell, the power-on insulator is welded with the shell, and the radio frequency circuit board is welded with the shell in a large area.
In the step 5, welding of components of the radio frequency circuit assembly is performed: the method comprises the steps of completing welding of components and cleaning of components.
In the step 6, welding of the voltage stabilizing circuit components and cleaning of the voltage stabilizing circuit components are carried out.
In the step 7, the voltage stabilizing circuit group 20 is installed in the cavity; and (5) performing manual welding of the high-temperature wire and the powered insulator.
In step 8, the eutectic assembly is bonded.
In the step 10, the electrical performance of the module is debugged and tested; and (5) finishing the installation of the lower cover plate and the lower cover plate.
By adopting the technical scheme, the manufacturing of the Ka-band frequency conversion module is realized by means of a microelectronic group packaging process technology.
Drawings
The contents of the drawings and the marks in the drawings are briefly described as follows:
FIG. 1 is a schematic diagram of the external structure of a Ka-band frequency conversion module according to the present invention;
FIG. 2 is a cross-sectional view in plan view of the structure shown in FIG. 1;
FIG. 3 is a schematic diagram of an amplifier carrier structure of the present invention;
FIG. 4 is a schematic diagram of a pre-amplification chip carrier structure according to the present invention;
FIG. 5 is a schematic diagram of a mixer carrier structure of the present invention;
FIG. 6 is a schematic diagram of the final stage amplifier carrier structure of the present invention;
FIG. 7 is a schematic view of an attenuator carrier structure of the present invention;
FIG. 8 is a schematic diagram illustrating the assembly of a high frequency circuit of the Ka band variable frequency module of the present invention;
FIG. 9 is an assembly schematic diagram of the high frequency circuit components of the Ka band conversion module of the present invention;
FIG. 10 is an assembly schematic diagram of components of a voltage stabilizing circuit of a Ka-band frequency conversion module according to the present invention;
FIG. 11 is a schematic diagram of a Ka-band variable frequency module wire bonding assembly of the present invention;
FIG. 12 is a schematic diagram of a back assembly of a Ka-band frequency conversion module of the present invention;
FIG. 13 is a schematic diagram of the upper cover plate structure of the Ka-band frequency conversion module according to the present invention;
fig. 14 is a schematic diagram of a lower cover plate structure of the Ka band frequency conversion module of the present invention.
Marked in the figure as:
1. amplifier carrier, 2, chip capacitors 47p,3, amplifier chip, 4, pre-amplification chip carrier, 5, chip capacitors 1000p,6, pre-amplification chip, 7, mixer carrier, 8, mixer chip, 9, final amplifier carrier, 10, final amplifier chip, 11, chip capacitors 100p,12, attenuator carrier, 13, attenuator chip, 14, sleeve assembly, 15, power up insulator, 16, radio frequency circuit board, 17, radio frequency insulator, 18, housing, 19, power up insulator, 20, voltage stabilizing circuit assembly, 21, screws, 22, upper cover plate, 23, lower cover plate.
Detailed Description
The following detailed description of the embodiments of the invention, given by way of example only, is presented in the accompanying drawings to aid in a more complete, accurate, and thorough understanding of the inventive concepts and aspects of the invention by those skilled in the art.
The structure of the present invention as expressed in fig. 8 is a Ka band frequency conversion module. The invention discloses a manufacturing method of a Ka-band frequency conversion module based on MMIC amplifier chip design. The method realizes the manufacture of the Ka-band frequency conversion module by means of a microelectronic group packaging process technology.
In order to achieve the aim of providing a manufacturing method of a Ka-band frequency conversion module, the invention adopts the following technical scheme:
as shown in fig. 1 to 14, the manufacturing method of the Ka-band frequency conversion module of the present invention includes the following steps:
step 1, cleaning a structural part before assembly:
structural members of the Ka-band frequency conversion module comprise a shell, an upper cover plate, a lower cover plate and the like.
And placing the shell, the upper cover plate, the lower cover plate and other structural members into a vapor phase cleaning machine for cleaning for 10-15 minutes.
Step 2, welding the sleeve:
1. filling 290 ℃ gold-tin soldering paste in the sleeve;
2. inserting the radio frequency insulator 17 into a sleeve of the Man Jin tin soldering paste, and placing a eutectic table for sintering to prepare a sleeve assembly 14;
3. the length (6.5+0.03) of the sleeve component of the radio frequency insulator 17 after the sintering is inspected by self-checking, and the sleeve component 14 is placed after the inspection is qualified and is used for the assembly of the subsequent modules.
Step 3, eutectic welding of the chip:
1. selecting a soldering lug with the melting point of 280 ℃ and the composition of Au80Sn20, and cutting the size of the soldering lug according to the size of a chip;
2. setting the temperature of the eutectic table to 300-310 ℃, fixing the carrier on the eutectic table, and completing eutectic welding among the chip, the capacitor and the carrier under a microscope, wherein the eutectic welding is shown in figures 3-7;
3. and placing the eutectic chip assembly in a gel box for standby.
Step 4, sintering the radio frequency circuit board and the insulator:
1. selecting solder paste with the melting point of 217 ℃ and the composition of Sn96.5Ag3Cu0.5, respectively coating the solder paste around the power-on insulator 15, the power-on insulator 19 and the sleeve assembly 14 by using a dispenser, and respectively mounting the power-on insulator 15, the power-on insulator 19 and the sleeve assembly 14 on corresponding mounting holes on the shell 18 according to the diagram shown in FIG. 8;
2. pasting a solder resist adhesive tape on the surface of the radio frequency circuit board 16, selecting a soldering lug with the thickness of 0.05mm, the melting point of 217 ℃ and the composition of Sn96.5Ag3Cu0.5, cutting according to the appearance of a radio frequency circuit, brushing soldering flux on two sides of the cut soldering lug and the soldering surface in the shell, flattening the internal pressure of the soldering lug at the position corresponding to the position of the soldering lug in the shell 18, and then putting the radio frequency circuit board 16 in the shell 18 and ensuring flatness;
3. preparing a heating platform, setting the temperature to be 250-260 ℃, simultaneously placing the shell 18 on the heating platform by means of a tool and a pressing block to ensure the welding penetration rate of the radio frequency circuit board 16, and taking down the shell to cool to normal temperature after the soldering paste is sufficiently melted;
4. placing the welded shell 18 assembly in a vapor phase cleaning machine for cleaning for 15-20 minutes to effectively remove the soldering flux;
5. the presence or absence of a short circuit between the powered insulator 15 and the sleeve assembly 14 is detected using a multimeter.
Step 5, welding components of the radio frequency circuit assembly:
1. selecting solder paste with a melting point of 183 ℃ and a composition of Pb37Sn63, and performing spot soldering paste treatment on a component bonding pad on the radio frequency circuit board 16 in the radio frequency circuit assembly by using a dispenser device; coating solder paste around the radio frequency insulator 17 by means of a dispenser, and mounting the radio frequency insulator 17 at a position corresponding to the mounting hole of the shell 18;
2. according to fig. 8, the components marked with C1, C2, C3, C4, C5, N1, N2 on the drawing are placed on the corresponding positions of the radio frequency circuit board 16 one by one;
3. preparing a heating platform, setting the temperature to 220-230 ℃, after the temperature reaches a set value, flatly placing the radio frequency circuit component attached with the components on the heating platform, and flatly taking down the radio frequency circuit component from the heating platform with the heat insulation gloves after the soldering paste is melted;
4. placing the radio frequency circuit assembly into a vapor phase cleaning machine for cleaning for 10-15 minutes to effectively remove soldering flux remained by soldering paste melting;
5. the microscope is used for checking that the installation position and direction of the components are correct, and the components are placed flatly and centered, so that tombstones, tin joints and virtual soldering cannot occur; and after the radio frequency circuit assembly is qualified, placing the radio frequency circuit assembly and waiting for the subsequent assembly of the module.
Step 6, welding voltage stabilizing circuit components:
1. selecting solder paste with a melting point of 183 ℃ and a component of Pb37Sn63, and performing spot soldering paste treatment on a component bonding pad on the voltage stabilizing circuit board by using a dispenser device;
2. according to fig. 10, components marked with C6, C7, C8, C9, C10, C11, C12, R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12 and M1 on the drawing are placed on corresponding positions of the voltage stabilizing circuit board one by one;
3. preparing a heating platform, setting the temperature to be 210-220 ℃, after the temperature reaches a set value, flatly placing the voltage stabilizing circuit assembly 20 attached with components on the heating platform, and flatly taking down the voltage stabilizing circuit assembly (20) from the heating platform by taking up heat insulation gloves after soldering paste is melted;
4. placing the voltage stabilizing circuit assembly 20 into a vapor phase cleaning machine for cleaning for 10-15 minutes to effectively remove soldering flux remained by melting soldering paste;
5. the microscope is used for checking that the installation position and direction of the components are correct, and the components are placed flatly and centered, so that tombstones, tin joints and virtual soldering cannot occur; after the inspection is qualified, the voltage stabilizing circuit assembly 20 is placed and is ready for use in the assembly of the subsequent modules.
Step 7, electric installation:
the voltage stabilizing circuit assembly 20 completed in the step 6 is fixed to the back surface of the casing 18 by screws and fastened, and the welding between the power-on insulator 15 and the radio frequency insulator 17 and the voltage stabilizing circuit is completed according to the indication of fig. 12; after the process is finished, the welding points are cleaned by alcohol cotton, so that the interior is clean and pollution-free.
Step 8, chip bonding:
according to fig. 8, the gluing operation of the positions marked with U1, U2, U3, U4, U5, U6 and U7 on the corresponding drawing of the eutectic assembly finished in the step 3 is finished by using a conductive glue bonding process by using a dispenser, and the eutectic assembly is placed into an oven for curing, wherein the temperature of the oven is as follows: 120-130 ℃, curing time: 1 to 1.5 hours.
Step 9, gold wire bonding:
1. according to fig. 11, wire bonding of the amplifier chip 3, the pre-amplifier chip 6, the final amplifier chip 10, the attenuator chip 13, the mixer chip 8, and the chip capacitor is completed;
2. checking whether a short circuit exists or not by using a universal meter detection circuit; the chip was checked for damage using a microscope.
Step 10, sealing cover:
the upper and lower cover plates 22, 22 of the module are fixed to the housing 18 by screws 21, completing the module cover plate assembly. Screw 21 is stainless steel round head screw M1.6x4.
So far, the Ka-band frequency conversion module is manufactured.
While the invention has been described above with reference to the accompanying drawings, it will be apparent that the invention is not limited to the above embodiments, but is capable of being modified or applied directly to other applications without modification, as long as various insubstantial modifications of the method concept and technical solution of the invention are adopted, all within the scope of the invention.
Claims (1)
1. A manufacturing method of a Ka-band frequency conversion module is characterized by comprising the following steps of: the manufacturing method comprises the following steps:
step 1, cleaning a structural part before assembly: structural parts of the Ka band frequency conversion module, including a shell (18), an upper cover plate (22) and a lower cover plate (23), are cleaned, and specifically:
placing the shell (18), the upper cover plate, the lower cover plate and other structural members into a vapor phase cleaning machine for cleaning for 10-15 minutes;
step 2, welding the sleeve: welding and cleaning the high-frequency insulator (17) and the sleeve, and simply testing whether the high-frequency insulator (17) has a short circuit or not, specifically comprising the following steps:
1) Filling 290 ℃ gold-tin soldering paste into the sleeve;
2) Inserting the radio frequency insulator (17) into a sleeve of the Man Jin tin soldering paste of the plug, placing a eutectic table for sintering, and manufacturing a sleeve assembly (14);
3) The length of the sleeve component of the radio frequency insulator (17) after the sintering is detected by self-checking is 6.5+0.03mm; placing the sleeve assembly (14) after the inspection is qualified, and waiting for the subsequent module assembly;
step 3, eutectic welding of the chip: eutectic soldering between the amplifier chip (3) and the amplifier carrier (1), between the mixer chip (8) and the mixer carrier (7) chip, and between the capacitor and the carrier are respectively completed, specifically;
1) Selecting a soldering lug with the melting point of 280 ℃ and the composition of Au80Sn20, and cutting the size of the soldering lug according to the size of a chip;
2) Setting the temperature of the eutectic table to 300-310 ℃, fixing the carrier on the eutectic table, and completing eutectic welding among the chip, the capacitor and the carrier under a microscope;
3) Placing the eutectic chip assembly in a gel box for standby;
step 4, sintering the radio frequency circuit board and the insulator: welding a radio frequency circuit board and an insulator: the method comprises the steps of welding a sleeve assembly with a shell, welding an electrified insulator (15) with the shell (18), and welding a large area between a radio frequency circuit board (16) and the shell (18), and specifically comprises the following steps:
1) Selecting solder paste with the melting point of 217 ℃ and the composition of Sn96.5Ag3Cu0.5, respectively coating the solder paste around the power-on insulator (15), the power-on insulator (19) and the sleeve assembly (14) by means of a dispenser, and respectively mounting the power-on insulator (15), the power-on insulator (19) and the sleeve assembly (14) at corresponding mounting holes on the shell (18);
2) Adhering a solder resist adhesive tape to the surface of a radio frequency circuit board (16), selecting a soldering lug with the thickness of 0.05mm, the melting point of 217 ℃ and the composition of Sn96.5Ag3Cu0.5, and cutting according to the appearance of the radio frequency circuit; brushing soldering flux on two sides of the cut soldering lug and the soldering surface in the shell, putting the soldering lug into a position corresponding to the shell (18) for internal pressure leveling, and then putting the radio frequency circuit board (16) into the shell (18) for leveling;
3) Preparing a heating platform, setting the temperature to be 250-260 ℃, and simultaneously placing the shell (18) on the heating platform by means of a tool and a pressing block to ensure the welding penetration rate of the radio frequency circuit board (16); after the soldering paste is sufficiently melted, taking down the shell and cooling to normal temperature;
4) Placing the welded shell (18) assembly into a vapor phase cleaning machine for cleaning for 15-20 minutes to effectively remove the soldering flux;
5) Detecting whether the electric insulator (15) and the sleeve assembly (14) are short-circuited or not by using a universal meter;
step 5, welding components of the radio frequency circuit assembly: welding components of the radio frequency circuit assembly: the method comprises the steps of completing welding of components and parts and cleaning a finished assembly, and specifically comprises the following steps:
1) Selecting solder paste with a melting point of 183 ℃ and a component of Pb37Sn63, and performing spot soldering paste treatment on a component bonding pad on a radio frequency circuit board (16) in a radio frequency circuit assembly by using a dispenser device; coating solder paste around the radio frequency insulator (17) by means of a dispenser, and mounting the radio frequency insulator (17) at a position corresponding to a mounting hole of the shell (18);
2) The components marked as C1, C2, C3, C4, C5, N1 and N2 on the drawing are placed on the corresponding positions of the radio frequency circuit board (16) one by one;
3) Preparing a heating platform, wherein the temperature is set to 220-230 ℃; after the temperature reaches a set value, flatly placing the radio frequency circuit component attached with the components on a heating platform, and flatly taking down the radio frequency circuit component from the heating platform after the soldering paste is melted by carrying the heat insulation glove;
4) Placing the radio frequency circuit assembly into a vapor phase cleaning machine for cleaning for 10-15 minutes to effectively remove soldering flux remained by melting soldering paste;
5) Checking the correct installation position and direction of the components by using a microscope, and putting the components flatly and centering the components without tombstoning, tin union and cold joint; after the radio frequency circuit assembly is qualified by inspection, the radio frequency circuit assembly is placed well and is used when a subsequent module is assembled;
step 6, welding voltage stabilizing circuit components: the welding of the components of the voltage stabilizing circuit and the cleaning of the voltage stabilizing circuit component (20) are carried out, and the method specifically comprises the following steps:
1) Selecting solder paste with the melting point of 183 ℃ and the composition of Pb37Sn63, and performing spot soldering paste treatment on a component bonding pad on the voltage stabilizing circuit board by using a dispenser device;
2) The components marked as C6, C7, C8, C9, C10, C11, C12, R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12 and M1 on the drawing are placed on the corresponding positions of the voltage stabilizing circuit board one by one;
3) Preparing a heating platform, wherein the temperature is set to be 210-220 ℃; after the temperature reaches a set value, flatly placing the voltage stabilizing circuit assembly (20) attached with the components on a heating platform, and flatly taking down the voltage stabilizing circuit assembly (20) from the heating platform after the soldering paste is melted by taking up the heat insulation gloves;
4) Placing the voltage stabilizing circuit assembly (20) into a vapor phase cleaning machine for cleaning for 10-15 minutes to effectively remove soldering flux remained by soldering paste melting;
5) Checking the correct installation position and direction of the components by using a microscope, and putting the components flatly and centering the components without tombstoning, tin union and cold joint; after the inspection is qualified, the voltage stabilizing circuit assembly (20) is placed well and is used when a subsequent module is assembled;
step 7, electric installation: installing a voltage stabilizing circuit group (20) to the cavity; the high-temperature wire and the electrified insulator (15) are welded manually, specifically:
fixing and fastening the voltage stabilizing circuit assembly (20) completed in the step 6 to the back of the shell (18) by using screws; finishing welding between the power-on insulator (15) and the radio frequency insulator (17) and the voltage stabilizing circuit; after the completion, cleaning the welding point by using alcohol cotton to ensure that the interior is clean and pollution-free;
step 8, chip bonding: the eutectic component is glued, and the method specifically comprises the following steps:
and 3, using a dispensing machine, adopting a conductive adhesive bonding process to finish cementing work of positions marked as U1, U2, U3, U4, U5, U6 and U7 on corresponding drawings on the eutectic assembly finished in the step 3, and putting the eutectic assembly into an oven for curing, wherein the temperature of the oven is as follows: 120-130 ℃, and the curing time is as follows: 1 to 1.5 hours;
step 9, gold wire bonding of the chip, which specifically comprises the following steps:
1) Wire bonding of an amplifier chip (3), a pre-stage amplifier chip (6), a final-stage amplifier chip (10), an attenuator chip (13), a mixer chip (8) and a chip capacitor is completed;
2) Checking whether a short circuit exists or not by using a universal meter; checking whether the chip is damaged or not by using a microscope;
step 10, sealing cover: debugging and testing the electrical performance of the module; the installation of the upper cover plate (22) and the lower cover plate (23) is completed, and the installation is specifically as follows:
the upper cover plate (22) and the lower cover plate (23) of the module are fixed on the shell (18) by using screws (21), so that the assembly of the module cover plate is completed; the screw (21) is a stainless steel round head screw M1.6X4;
so far, the Ka-band frequency conversion module is manufactured.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811560612.0A CN109672410B (en) | 2018-12-20 | 2018-12-20 | Manufacturing method of Ka-band frequency conversion module |
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| WO2017215480A1 (en) * | 2016-06-13 | 2017-12-21 | 深圳市华讯方舟卫星通信有限公司 | Frequency-mixing transmitting device |
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| CN107708400A (en) * | 2017-09-01 | 2018-02-16 | 安徽华东光电技术研究所 | Power connects the processing method of pulse amplifier in X-band |
| CN107645849A (en) * | 2017-09-19 | 2018-01-30 | 安徽华东光电技术研究所 | A kind of preparation method of microwave excitation high-frequency model |
| CN108039553A (en) * | 2017-12-15 | 2018-05-15 | 安徽华东光电技术研究所 | A kind of Ku wave bands one divide the manufacture craft of three power splitters |
| CN108768304A (en) * | 2018-06-14 | 2018-11-06 | 安徽华东光电技术研究所有限公司 | A kind of manufacture craft of 50 watts of power amplifiers of S-band |
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