CN107367713B - Manufacturing and processing method of front-end module of K2 waveband receiver - Google Patents
Manufacturing and processing method of front-end module of K2 waveband receiver Download PDFInfo
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- CN107367713B CN107367713B CN201710473433.2A CN201710473433A CN107367713B CN 107367713 B CN107367713 B CN 107367713B CN 201710473433 A CN201710473433 A CN 201710473433A CN 107367713 B CN107367713 B CN 107367713B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
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- Electric Connection Of Electric Components To Printed Circuits (AREA)
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Abstract
The invention discloses a manufacturing and processing method of a front-end module of a K2 waveband receiver, which comprises the following steps: step 1: manufacturing and installing a radio frequency insulator assembly; step 2: bonding a feed insulator by using conductive adhesive; and step 3: installing a Rogers circuit board and an SMP connector; and 4, step 4: welding components and manufacturing a feed circuit board assembly; and 5: manufacturing eutectic components U1, U2 and U4; step 6: sequentially mounting eutectic components on the cavity; and 7: the conductive adhesive is bonded with the filter; and 8: welding by electric fitting; and step 9: plasma cleaning; step 10: bonding with gold wires; step 11: and (7) sealing the cover. The method can improve the product percent of pass and provides powerful guarantee for batch production.
Description
Technical Field
The invention relates to the field of microwave module manufacturing and processing technologies, in particular to a manufacturing and processing method of a front-end module of a K2 waveband receiver.
Background
The receiver is an important component of the radar, the radar receiver mainly plays a role in amplifying and processing a required echo reflected back after being transmitted by the radar, the front end of the receiver is the front end of an echo signal processed by the radar, the performance of the receiver directly influences the performance of a subsequent circuit, and influences the performance index of the whole radar.
After a plurality of tests and process groping, the product produced by the process method is tested, tested in environment and tested on a computer, all technical performance indexes meet the requirements of the whole machine, and the manufacturing process is simple in flow, small in equipment investment and suitable for small-batch production.
Disclosure of Invention
The invention aims to provide a manufacturing and processing method of a front-end module of a K2 waveband receiver, which can improve the product qualification rate and provide powerful guarantee for batch production.
In order to achieve the above object, the present invention provides a method for manufacturing a front-end module of a K2 waveband receiver, the method comprising: step 1: manufacturing and installing a radio frequency insulator assembly; step 2: bonding a feed insulator by using conductive adhesive; and step 3: installing a Rogers circuit board and an SMP connector; and 4, step 4: welding components and manufacturing a feed circuit board assembly; and 5: manufacturing eutectic components U1, U2 and U4; step 6: sequentially mounting eutectic components on the cavity; and 7: the conductive adhesive is bonded with the filter; and 8: welding by electric fitting; and step 9: plasma cleaning; step 10: bonding with gold wires; step 11: and (7) sealing the cover.
Preferably, step 1 comprises: respectively trimming the lengths of the long end and the short end of the radio frequency insulator to 1.6-1.8mm and 0.4-0.6mm, installing the long end of the radio frequency insulator into a sleeve, heating, and melting and sintering soldering paste to obtain a radio frequency insulator assembly; and (3) coating two circles of 217 ℃ of solder paste on the outer side of the radio frequency insulator assembly, then installing the radio frequency insulator assembly on a cavity, and sintering the radio frequency insulator assembly at the temperature of 255-265 ℃.
Preferably, step 2 includes applying a layer of conductive adhesive on the outside of the feed insulator to be mounted on the cavity.
Preferably, step 3 includes coating a layer of 183 ℃ solder paste on the back surface of the Rogers circuit board, dispensing two circles of 183 ℃ solder paste on the outer side of the feed insulator, dispensing four circles of 183 ℃ solder paste on the outer side of the SMP connector, mounting the Rogers circuit board, the feed insulator and the SMP connector on the cavity, pressing the pressing block on the Rogers circuit board, covering the cover plate and fixing.
Preferably, in step 4, the resistor R1, the capacitors C1-C6, the amplifier chip U6 and the filter U7 are soldered to a Rogers circuit board by using an electric iron to melt 183 ℃ solder wires, and 217 ℃ solder paste is dispensed on the pads of the to-be-mounted components by using a dispenser.
Preferably, in step 5, the amplifier chip CGY2121 and the four chip capacitors are eutectic with gold-tin solder paste on a molybdenum-copper carrier on a manual eutectic table at a temperature of 290-.
Preferably, 160 ℃ solder paste is dispensed on the site to be mounted before mounting the eutectic assembly in step 6.
Preferably, in step 7, a layer of conductive adhesive is coated in the cavity region of the filter to be mounted.
Preferably, in step 8, the radio frequency insulator assembly, the feed insulator and the edge pad are welded together by using an electric iron to melt the 183 ℃ solder wire; the feed circuit board is arranged on the back surface of the cavity by screws matched with the flat pads and the elastic pads, and the feed insulator and the circuit board are welded by a lead by melting a 183 ℃ soldering tin wire by using an electric iron.
Preferably, step 9 includes performing argon cleaning using a plasma cleaning machine, wherein the cleaning radio frequency power is 500W, and the cleaning time is 3 min.
According to the technical scheme, the method comprises the following steps of 1: manufacturing and installing a radio frequency insulator assembly; step 2: bonding a feed insulator by using conductive adhesive; and step 3: installing a Rogers circuit board and an SMP connector; and 4, step 4: welding components and manufacturing a feed circuit board assembly; and 5: manufacturing eutectic components U1, U2 and U4; step 6: sequentially mounting eutectic components on the cavity; and 7: the conductive adhesive is bonded with the filter; and 8: welding by electric fitting; and step 9: plasma cleaning; step 10: bonding with gold wires; step 11: and (7) sealing the cover. The method can improve the product percent of pass and provides powerful guarantee for batch production.
Additional features and advantages of the invention will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a front assembly view of a receiver front end module of the present invention;
FIG. 2 is a rear assembly view of a receiver front end module of the present invention;
FIG. 3 is a eutectic diagram of a chip of the present invention.
Description of the reference numerals
1 cavity 2Rogers circuit board
3 radio frequency insulator assembly 4 feed insulator DC2516-0.7
7 feed circuit board
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
In the present invention, unless otherwise specified, directional words included in terms such as "upper, lower, left, right, front, rear, inner, and outer" and the like merely represent the directions of the terms in a normal use state or are colloquially known by those skilled in the art, and should not be construed as limiting the terms. In the following description of the embodiments, the feed insulator 4 is representative of the feed insulators DC2516 to 0.7, and the feed insulator 6 is representative of the feed insulators DC1616 to 0.45.
Referring to the front-end module of the K2 waveband receiver shown in fig. 1-3, the manufacturing method of the front-end module of the K2 waveband receiver includes: step 1: manufacturing and installing a radio frequency insulator assembly; step 2: bonding a feed insulator by using conductive adhesive; and step 3: installing a Rogers circuit board and an SMP connector; and 4, step 4: welding components and manufacturing a feed circuit board assembly; and 5: manufacturing eutectic components U1, U2 and U4; step 6: sequentially mounting eutectic components on the cavity; and 7: the conductive adhesive is bonded with the filter; and 8: welding by electric fitting; and step 9: plasma cleaning; step 10: bonding with gold wires; step 11: and (7) sealing the cover.
Through the implementation of the technical scheme, the product qualification rate is improved, and powerful guarantee is provided for batch production.
In the embodiment, the lengths of the long end and the short end of a radio frequency insulator (RF2516) are respectively trimmed to 1.6-1.8mm and 0.4-0.6mm, a layer of gold-tin soldering paste (Au80Sn20) is coated on the inner wall of one end of a sleeve, then the long end of the radio frequency insulator is installed in the sleeve until the overall length of the radio frequency insulator component 3 is 3.5-3.7mm, then the radio frequency insulator component 3 is placed on a manual eutectic heating table at 300 ℃ together to be melted by the soldering paste, and the radio frequency insulator component 3 is obtained after sintering. Two circles of 217 ℃ soldering paste (OM338) are dotted on the outer side of the radio frequency insulator assembly 3, and then the front side of a front end module of a K2 waveband receiver is assembled in a drawing 1 and is installed on a corresponding position of a cavity 1; sintering the solder paste on a heating platform at the temperature of 255-265 ℃, slightly shifting the solder paste by using tweezers when the solder paste begins to melt so as to enable the solder paste at the welding line to be bright and full, taking down the solder paste after sintering, and naturally cooling the solder paste.
In this embodiment, a layer of conductive adhesive (H20E) is coated on the outer side of the feed insulator 6(DC1616-0.45), and then the front assembly of the front end module of the receiver of K2 waveband is compared with that of fig. 1 and is installed on the corresponding position of the cavity 1; the conductive adhesive is placed in an oven with the temperature of 115-125 ℃ for curing the conductive adhesive, wherein the curing time is 60-120 min.
In this embodiment, a thin layer of 183 ℃ solder paste is applied to the back side of the Rogers board 2 and then mounted to the cavity 1 as compared to the K2 band receiver front end module front side assembly of fig. 1; 2 circles of 183 ℃ solder paste are applied to the outer side of a feed insulator 4(DC2516-0.7), and then the front side of a front end module of a K2 wave band receiver is assembled in a figure 1 and is installed on a cavity 1; coating 4 circles of 183-DEG solder paste on the outer side of the SMP connector 5, then assembling the SMP connector to the front side of a front-end module of a K2 waveband receiver in a manner of referring to a figure 1, and installing the SMP connector to a corresponding position of a cavity 1, wherein an inner core of the SMP connector is centered with a microstrip line of a Rogers circuit board; pressing the pressing block on the Rogers circuit board 2, covering the cover plate, fixing the cover plate by using a screw, placing the pressing block and the cover plate on a 215-plus 225-DEG C heating platform together for sintering, and continuously screwing the screw when the soldering paste starts to melt; slightly poking the SMP connector 5 and the feed insulator 4(DC2516-0.7) by using forceps to ensure that the soldering paste at the welding seam is bright and full, taking down the sintered soldering paste after sintering, and naturally cooling the sintered soldering paste.
In this embodiment, fig. 1 is assembled on the front surface of a front-end module of a receiver in a K2 waveband, a resistor R1, capacitors C1 to C6, an amplifier chip U6 and a filter U7 are soldered to a Rogers circuit board 2 by using an electric iron to melt a solder wire at 183 ℃, and after the soldering is completed and cooled, the circuit board is placed in a beaker containing absolute ethyl alcohol for ultrasonic cleaning, then is scrubbed by using a brush, and is naturally dried. According to the assembly drawing of a feed circuit board assembly 2, 217 ℃ soldering paste is applied to a pad to be attached with a component by a dispenser in a dispensing mode, the component is correctly attached, then the component is placed on a 235-245 ℃ heating platform for sintering, after the sintering is finished and cooled, the component is placed in a beaker containing absolute ethyl alcohol for ultrasonic cleaning, and then a brush is used for scrubbing and naturally drying.
In this embodiment, according to the eutectic chip diagram of fig. 3, the amplifier chips CGY2121 and 4 chip capacitors are eutectic-bonded to the molybdenum-copper carrier with gold-tin solder paste on a manual eutectic table at a temperature of 290-. Comparing with the eutectic chip FIG. 3, according to the method of the step 1), eutectic amplifier chips 2069 are eutectic to obtain eutectic assemblies U2. According to the eutectic mixer chip H260, the eutectic assembly U4 is obtained by comparing the eutectic mixer chip with the eutectic mixer chip shown in the eutectic mixer chip FIG. 3 and according to the method of the step 1).
In this embodiment, after the solder is melted, eutectic assemblies U1, U2 and U4 are friction welded to the cavity 1, and then removed for natural cooling, in contrast to the front assembly of the K2 band receiver front end module shown in fig. 1.
In this embodiment, a layer of conductive glue (H20E) (2 points in total) is applied in the cavity area of the filter to be mounted, and then the first filter U3 and the second filter U5 are mounted in corresponding positions in the cavity 1, in contrast to the front assembly of the K2 band receiver front end module of fig. 1; and then, the cavity 1 is placed in an oven with the temperature of 115-125 ℃ for conducting conductive adhesive curing, wherein the curing time is 60-120 min.
In this embodiment, the front side of the receiver front end module is assembled as shown in fig. 1 according to K2 band, and the rf insulator assembly, the feed insulator and the edge pads are soldered together (3 points) by melting a 183 ℃ solder wire with an electric iron; according to the back assembly of the front end module of the receiver in the K2 waveband, as shown in the figure 2, a feed circuit board is mounted on the back of a cavity by using an M2x4 stainless steel cross-slot round-head screw matched with a flat pad and a spring pad, and a feed insulator and the circuit board are welded by using a lead wire by using an electric iron to melt a 183 ℃ soldering tin wire (9 positions in total).
In this embodiment, a YES-G500 plasma cleaner was used, argon cleaning was selected, reference cleaning parameters: the radio frequency power is 500W, and the plasma cleaning time is 3 min. Using a gold wire bonding press 7476E, reference bonding parameters: the first point and the second point of the ultrasonic power of the chip-to-chip capacitor are respectively 138 and 163, the first point and the second point of the ultrasonic time are respectively 38 and 70, and the tail fiber is 30; the front first cover plate and the back cover plate are fixed by M2x4 countersunk head screws, and the front second cover plate is soldered by 118 ℃ indium tin solder.
The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.
Claims (10)
1. A manufacturing and processing method for a front-end module of a K2 waveband receiver is characterized by comprising the following steps: step 1: manufacturing and installing a radio frequency insulator assembly; step 2: bonding a feed insulator by using conductive adhesive; and step 3: installing a Rogers circuit board and an SMP connector; and 4, step 4: welding components and manufacturing a feed circuit board assembly; and 5: manufacturing eutectic components U1, U2 and U4; step 6: sequentially mounting eutectic components on the cavity; and 7: the conductive adhesive is bonded with the filter; and 8: welding by electric fitting; and step 9: plasma cleaning; step 10: bonding with gold wires; step 11: and (7) sealing the cover.
2. The method for manufacturing the front-end module of the K2 waveband receiver as claimed in claim 1, wherein the step 1 comprises: respectively trimming the lengths of the long end and the short end of the radio frequency insulator to 1.6-1.8mm and 0.4-0.6mm, installing the long end of the radio frequency insulator into a sleeve, heating, and melting and sintering soldering paste to obtain a radio frequency insulator assembly;
and (3) coating two circles of 217 ℃ of solder paste on the outer side of the radio frequency insulator assembly, then installing the radio frequency insulator assembly on a cavity, and sintering the radio frequency insulator assembly at the temperature of 255-265 ℃.
3. The method for manufacturing the front-end module of the K2 waveband receiver of claim 1, wherein the step 2 comprises coating a layer of conductive adhesive on the outer side of the feed insulator to be installed on the cavity.
4. The method for manufacturing the front-end module of the K2 waveband receiver, according to claim 1, wherein the step 3 comprises coating a layer of 183 ℃ solder paste on the back surface of the Rogers circuit board, dispensing two circles of 183 ℃ solder paste on the outer side of the feed insulator, dispensing four circles of 183 ℃ solder paste on the outer side of the SMP connector, mounting the Rogers circuit board, the feed insulator and the SMP connector on the cavity, pressing the pressing block on the Rogers circuit board, covering the cover plate and fixing.
5. The method for manufacturing the front-end module of the K2 waveband receiver as claimed in claim 1, wherein in step 4, the resistor R1, the capacitors C1-C6, the amplifier chip U6 and the filter U7 are soldered to a Rogers circuit board by melting 183 ℃ solder wires with an electric iron, and 217 ℃ solder paste is dispensed on the pads of the component to be mounted by using a dispenser.
6. The method as claimed in claim 1, wherein in step 5, the amplifier CGY2121 and the four chip capacitors are eutectic-bonded to the Mo-Cu carrier with Au-Sn solder paste on a manual eutectic bonding table at a temperature of 290 ℃ and 310 ℃.
7. The method for manufacturing the front-end module of the K2 waveband receiver as claimed in claim 1, wherein 160 ℃ solder paste is applied to the position to be mounted before mounting the eutectic assembly in step 6.
8. The method for manufacturing the front-end module of the K2 waveband receiver as claimed in claim 1, wherein in step 7, a layer of conductive adhesive is coated in the cavity region of the filter to be installed.
9. The method for manufacturing the front-end module of the K2 waveband receiver as claimed in claim 1, wherein in step 8, the radio frequency insulator assembly, the feed insulator and the edge pad are welded together by using an electric iron to melt 183 ℃ solder wires;
the feed circuit board is arranged on the back surface of the cavity by screws matched with the flat pads and the elastic pads, and the feed insulator and the circuit board are welded by a lead by melting a 183 ℃ soldering tin wire by using an electric iron.
10. The method for manufacturing the front-end module of the K2 waveband receiver of claim 1, wherein the step 9 comprises argon cleaning with a plasma cleaner, wherein the cleaning RF power is 500W, and the cleaning time is 3 min.
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| CN111934077A (en) * | 2020-08-07 | 2020-11-13 | 安徽华东光电技术研究所有限公司 | Manufacturing process of Ka-band waveguide receiving module |
| CN112954913A (en) * | 2021-01-26 | 2021-06-11 | 安徽华东光电技术研究所有限公司 | Intermediate frequency module manufacturing method of K1 waveband receiver |
| CN113939109A (en) * | 2021-09-29 | 2022-01-14 | 隆扬电子(昆山)股份有限公司 | Rogers product mounting process |
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