CN108161264B - Manufacturing method of X-band transceiving component - Google Patents
Manufacturing method of X-band transceiving component Download PDFInfo
- Publication number
- CN108161264B CN108161264B CN201711246764.9A CN201711246764A CN108161264B CN 108161264 B CN108161264 B CN 108161264B CN 201711246764 A CN201711246764 A CN 201711246764A CN 108161264 B CN108161264 B CN 108161264B
- Authority
- CN
- China
- Prior art keywords
- chip
- eutectic
- carrier
- circuit board
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
- B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/28—Details of pulse systems
- G01S7/282—Transmitters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/28—Details of pulse systems
- G01S7/285—Receivers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/35—Details of non-pulse systems
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/35—Details of non-pulse systems
- G01S7/352—Receivers
Abstract
The invention relates to a method for manufacturing an X-waveband transceiver component, and discloses a method for manufacturing an X-waveband transceiver component, which comprises the following steps: 1, eutectic-crystallizing a plurality of different chips on corresponding carriers; step 2, sintering the plurality of joints, the substrate and the circuit board to the transceiver module shell; step 3, sintering the common components and the eutectic chip on a circuit board to obtain a component A; and 4, carrying out gold wire bonding on the component A, and carrying out capping after testing and debugging. The manufacturing method of the X-band transceiving component overcomes the problem of low qualification rate in the prior art, realizes scientific and simple production of the amplifier, and greatly improves the qualification rate of the produced products compared with the prior art.
Description
Technical Field
The invention relates to a manufacturing method of an X-waveband transmitting-receiving assembly, in particular to a manufacturing method of an X-waveband transmitting-receiving assembly.
Background
Each radiator of the active phased array radar is provided with a T/R (transmitting/receiving) component, each component can generate and receive electromagnetic waves by itself, and therefore the active phased array radar has greater advantages in frequency width, signal processing and redundancy design than a passive phased array radar. The beam pointing of the active phased array radar is very flexible and rapid; one radar can form a plurality of independent beams simultaneously, and simultaneously realize various functions such as searching, identifying, tracking, guiding, passive detection and the like; the multi-target receiving capacity is strong, and a plurality of targets can be monitored and tracked simultaneously; the anti-interference capability is good. In addition, the phased array radar has high reliability and can still work normally even if a small number of transmitting/receiving modules fail. Active phased array radars have been widely used in a variety of equipment. The T/R component is a core component of the active phased array radar, and the technical index of the T/R component is directly related to the overall performance of the active phased array radar.
How to design an X-band transceiver module is an urgent problem to be solved at the present stage.
Disclosure of Invention
The invention aims to provide a manufacturing method of an X-waveband transmitting-receiving component, which overcomes the problem of low qualification rate in the prior art, realizes scientific and simple production of the amplifier and greatly improves the qualification rate of the produced products compared with the prior art.
In order to achieve the above object, the present invention provides a method of manufacturing an X-band transceiver module, the method comprising:
1, eutectic-crystallizing a plurality of different chips on corresponding carriers;
step 3, sintering the common components and the eutectic chip on a circuit board to obtain a component A;
and 4, carrying out gold wire bonding on the component A, and carrying out capping after testing and debugging.
Preferably, in step 1, the method of eutectic-crystallizing a plurality of different chips onto respective carriers comprises:
and setting the temperature of the heating platform to be a preset temperature, and carrying out eutectic crystallization on various different chips to the central position of the carrier.
Preferably, in step 1, the temperature of the heating platform is set to 285-.
Preferably, in step 2,
brushing and then baking the plurality of connectors, the substrate and the circuit board, and cooling to 22-25 ℃;
dispensing solder paste on the plurality of connectors, the substrate and the circuit board, and placing the connectors, the substrate and the circuit board on a heating platform and sintering the connectors, the substrate and the circuit board on a housing of the transceiver module;
and (3) brushing and then baking the sintered shell of the transceiver module, and cooling to 22-25 ℃.
Preferably, in step 3, the step of sintering the common component and the eutectic chip on the circuit board includes:
and sintering the common component and the eutectic chip on a circuit board on a heating platform, and placing the circuit board on filter paper for natural cooling.
Preferably, in step 4, the step of capping comprises:
and cleaning the tested and debugged assembly and the cover plate, matching the cover plate with the shell of the tested and debugged assembly, performing vacuum drying, and finally performing laser welding.
Preferably, in step 4, the vacuum drying time is 1.5 hours to 2.5 hours; the temperature was set at 55-65 ℃.
The X-waveband T/R assembly produced by the technical scheme completely meets the design requirements of various technical performance indexes through testing, environmental experiments and field debugging of the whole machine. The technological process for producing the amplifier is scientific and simple, and the qualification rate of the produced product is greatly improved compared with the prior art.
Additional features and advantages of the invention will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is an assembly diagram illustrating an X-band transceiver module of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
The invention provides a method for manufacturing an X-waveband transmitting-receiving component, which comprises the following steps:
1, eutectic-crystallizing a plurality of different chips on corresponding carriers;
step 3, sintering the common components and the eutectic chip on a circuit board to obtain a component A;
and 4, carrying out gold wire bonding on the component A, and carrying out capping after testing and debugging.
The X-waveband T/R assembly produced by the process completely meets the design requirements in terms of various technical performance indexes through testing, environmental experiments and field debugging of the whole machine. The technological process for producing the amplifier is scientific and simple, and the qualification rate of the produced product is greatly improved compared with the prior art.
In an embodiment of the present invention, in step 1, a method for eutectic-crystallizing a plurality of different chips onto respective carriers may include:
and setting the temperature of the heating platform to be a preset temperature, and carrying out eutectic crystallization on various different chips to the central position of the carrier.
In this embodiment, in step 1, the temperature of the heating platform is set to 285-.
In this embodiment, in step 2,
brushing and then baking the plurality of connectors, the substrate and the circuit board, and cooling to 22-25 ℃;
dispensing solder paste on the plurality of connectors, the substrate and the circuit board, and placing the connectors, the substrate and the circuit board on a heating platform and sintering the connectors, the substrate and the circuit board on a housing of the transceiver module;
and (3) brushing and then baking the sintered shell of the transceiver module, and cooling to 22-25 ℃.
In this embodiment, in step 3, the step of sintering the general component and the eutectic-later chip on the circuit board includes:
and sintering the common component and the eutectic chip on a circuit board on a heating platform, and placing the circuit board on filter paper for natural cooling.
In this embodiment, in step 4, the step of capping comprises:
and cleaning the tested and debugged assembly and the cover plate, matching the cover plate with the shell of the tested and debugged assembly, performing vacuum drying, and finally performing laser welding.
In this embodiment, in step 4, the vacuum drying time is 1.5 hours to 2.5 hours; the temperature was set at 55-65 ℃.
In a most preferred embodiment of the present invention, the manufacturing process of the X-band T/R module specifically includes the following steps:
step 1: eutectic-crystallizing chips on corresponding molybdenum-copper carriers
The specific operation is as follows: opening the eutectic platform, and setting the temperature of the heating platform to 290 ℃; placing a carrier on an eutectic table, sticking a proper amount of gold-tin soldering paste at 280 ℃ on the carrier by using a toothpick, slightly clamping a chip on the carrier by using tweezers after the soldering paste is melted, and properly shifting the chip to ensure that the chip is firmly bonded with the carrier, wherein the chip is positioned at the center of the molybdenum-copper carrier as much as possible; after the eutectic is finished, the chip and carrier combination is lightly clamped by tweezers and put into a corresponding chip box, and the temperature is recovered to normal temperature for next use. The chips requiring eutectic are: a power supply chip: IC1, IC2, IC3, U1; a logic chip: u2, U3, U4, U5, inverter: u6; a driving chip: U7A, U7B; power amplifier pulse chip: U8A, U8B; a wave control chip: U9A, U9B; customizing a core chip: U10A, U10B; driving and placing the chip: U11A, U11B; receiving an amplifying chip: U12A, U12B, U14A, U14B; a power amplifier chip: U13A, U13B; an amplitude limiting chip: U15A, U15B; a circulator: U16A, U16B; emitting a solid attenuation chip: T1A, T1B; receiving a solid attenuation chip: T2A, T2B; phase modulation chip: P1A, P1B, P2A, P2B; an NPN chip: q1; MOS chip: Q2A, Q2B; 5.1V voltage-stabilizing chip: d1; chip capacitance: c27, C28, C29, C30, C31, C32, C33, C34, C35, C36, C37, C38, C39, C40, C45, C46; array chip capacitance: c41, C42, C43 and C44. Specifically, P1A, U11A, C35 and C36 are eutectic on the same molybdenum-copper carrier; P1B, U11B, C37 and C38 are eutectic on the same molybdenum-copper carrier; eutectic crystals of U12A, T2A and P2A are on the same molybdenum-copper carrier; eutectic crystals of U12B, T2B and P2B are on the same molybdenum-copper carrier; eutectic crystals of U13A, C41 and C42 are on the same molybdenum-copper carrier; eutectic crystals of U13B, C43 and C44 are on the same molybdenum-copper carrier; eutectic crystals of U14A, U15A and C45 are on the same molybdenum-copper carrier; the eutectic crystals of U14B, U15B and C46 are on the same molybdenum-copper carrier, and the eutectic crystals of U7A and U7B are on the same carrier.
Step 2: thirteen-core connectors X1, SMP connectors X2, X3, X4, LTCC substrates, Rogers circuit boards RG1, RG2A, RG2B, RG3A, RG3B were sintered to the TR case.
2.1 placing thirteen-core connectors X1, SMP connectors X2, X3, X4, LTCC substrates, Rogers circuit boards RG1, RG2A, RG2B, RG3A and RG3B in a culture dish containing absolute ethyl alcohol at 60 ℃ and brushing with yellow soft hair brushes, cleaning, placing thirteen-core connectors X1, SMP connectors X2, X3, X4, LTCC substrates, Rogers circuit boards RG1, RG2A, RG2B, RG3A and RG3B in an oven at 50 ℃ for baking for 5 +/-1 minutes, and naturally cooling to 22-25 ℃.
2.2 the dispenser is opened and a continuous dispensing mode is adopted, the pressure of the dispenser is set to be (45-60) psi, and a circle of ALPHAO 338 solder paste with the melting point of 217 ℃ is dispensed on one end of the inner wall of the through hole, which is close to the outer surface of the cavity, of the thirteen-core joint and the SMP joint and on the outer side of the through hole, which are respectively provided with the thirteen-core joint and the SMP joint. A melting point 217 ℃ component of ALPHAOM338 solder paste is printed on the back surface of an LTCC substrate, Rogers circuit boards RG1, RG2A, RG2B, RG3A and RG3B, then the LTCC substrate with the solder paste printed thereon, the Rogers circuit boards RG1, RG2A, RG2B, RG3A and RG3B are installed at the bottom of the cavity, and a thirteen-core connector X1, an SMP connector X2, X3 and X4 are respectively inserted into corresponding through holes.
2.3 the temperature of the heating platform is set to 230 +/-5 ℃, the 2.2 component to be sintered is placed on the heating platform at 230 +/-5 ℃ for sintering, when the soldering paste begins to melt, the thirteen-core connector X1, the SMP connectors X2, X3 and X4 are slightly pulled by tweezers, so that the soldering paste flows fully, and a proper amount of rosin water is added at the welding position by a medical injector, so that the sintering is more complete. The sintering positions of the LTCC substrate and the Rogers circuit boards RG1, RG2A, RG2B, RG3A and RG3B are ensured to be correct by paying attention not to shift the LTCC substrate and the Rogers circuit boards RG1, RG2A, RG2B, RG3A and RG3B and correcting the displacement with tweezers in time. After welding, taking the welded assembly down from the heating platform, and placing the assembly on filter paper for natural cooling;
2.4 cleaning with a vapor phase cleaning machine, placing the assembly cooled by 2.3 in a cleaning tank containing ABZOLCEGCLEARER cleaning agent at 60 ℃ for hot-boiling (20 +/-1) minutes; taking out, placing in a culture dish containing 60 ℃ absolute ethyl alcohol, brushing the surface of the circuit board, the thirteen-core connector X1, the welding part of SMP connectors X2, X3 and X4 by using a yellow soft hair brush, and brushing the gaps around the circuit board by using a meat hard hair brush for 5 +/-1 minutes; and then placing the cleaned assembly in an oven at 50 ℃ for baking for 5 +/-1 minutes, and naturally cooling to 22-25 ℃ for later use.
And step 3: sintering the common components and the eutectic chip on the circuit board
3.1 using pneumatic dispenser to apply SN63CR32 solder paste at 183 deg.C onto the cleaned circuit board pads, and placing the corresponding components on the pads. Component list: r, R and R are 10K omega resistors, R is 20K omega resistor, R and R are 200 omega resistors, R and R are 240 omega resistors, R is 120 omega resistor, R is 160 omega resistor, R is 47 omega thermistor, R is 510 omega resistor, R is 1.5K omega resistor, R and R are 910 omega resistor, R and R are 5.1K omega resistor, R and R are 1.6K omega resistor, R is 1K omega resistor, R and R are 150 omega resistor, R and R are 36 omega resistor, R and R are 20 omega resistor, R is 82 omega resistor, R is 240 omega resistor, C is 22uF capacitor, C and C, c10, C13, C14, C15, C16, C19, C20, C21 and C22 are 1uF capacitors, C3, C4 and C6 are 10uF capacitors, C5 is 100nF capacitor, C9 is 18pF capacitor, C11 and C12 are 330uF capacitors, C17 and C18 are 510pF capacitors, C23, C24, C25 and C26 are 1nF capacitors, and IC4 is a time delay chip and a chip after eutectic crystallization in the step 1.
3.2 the temperature of the heating platform is set to 190 +/-5 ℃, the 3.1 component placed assembly is placed on the heating platform for sintering, and the assembly is observed under a microscope, if the dislocation and the deviation of the components occur in the sintering process, the assembly is gently corrected by using tweezers in time, so that the accuracy of the welding process is ensured. And after welding, taking the welded assembly down from the heating platform, and placing the assembly on filter paper for natural cooling.
3.3 the component bonding pad is lightly cleaned by clamping a proper amount of alcohol cotton soaked with pure alcohol by using tweezers, care is necessary during cleaning, the bare chip after eutectic crystal is not touched and polluted, and the welding point after cleaning is smooth and bright.
And 4, step 4: carrying out gold wire bonding on the component assembly of the sintered component
4.1 opening the bonding heating platform, setting the temperature at a required temperature point (105 +/-5) DEG C, and preheating for 10-20 minutes;
4.2 fixing the cleaned assembly 3.3 on a bonding heating table to ensure the assembly to be flat, adjusting the height of a workbench to ensure that the tip of the cleaver is slightly lower than a device with the lowest chip to be welded when the tip is at the lowest position;
4.3 turning on power supply (POWERSMIVH) on MODEL 747677E three way bonder enters the "MODEL 7700-BALLbBonder" toggle switch "BUFFER" conversion program mode BUFFER. The tool is adjusted to heat the knob, and the cleaver is adjusted to be 0 without heating the knob;
4.4 performing gold wire bonding according to the gold wire bonding. When in welding, the first spot is welded on the device, and the position of the first spot is accurately aligned with the middle position of the bonding pad so as to ensure the attractiveness and avoid short circuit. Care must be taken not to touch, contaminate the die, and destroy the bonded gold wire during operation.
And 5: testing and debugging the bonded assembly
After the relevant instrument equipment is connected, the assembly can be tested and debugged, and the bare chip is not touched and polluted by care when debugging operation is carried out.
Step 6: laser capping of the debugged assembly
6.1 cleaning the debugged assembly and the cover plate, particularly the effective area to be welded, by using acetone, and cleaning;
6.2 matching the cover plate with the shell, and in order to ensure the welding tightness, the gap between the shell and the cover plate is preferably less than 0.1 mm;
6.3, placing the matched assembly of the cover plate in a vacuum oven, and baking for 2 hours at the temperature of 60 ℃;
6.4, after the assembly is finished, the assembly is placed on a welding tool, and after a welding track program and welding parameters are compiled, laser welding is carried out.
And 7: marking and retesting
And (3) for the building of the laser welding, performing identification printing by using a laser marking machine, after the identification printing is completed, connecting a peripheral circuit and a related instrument, and then retesting the T/R assembly, thus completing the manufacture of the X-waveband active phased array radar transmitting and receiving (T/R) assembly.
The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, however, the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the technical idea of the present invention, and these simple modifications are within the protective scope of the present invention.
It should be noted that the various technical features described in the above embodiments can be combined in any suitable manner without contradiction, and the invention is not described in any way for the possible combinations in order to avoid unnecessary repetition.
In addition, any combination of the various embodiments of the present invention is also possible, and the same should be considered as the disclosure of the present invention as long as it does not depart from the spirit of the present invention.
Claims (7)
1. A method for manufacturing an X-band transceiver module is characterized by comprising the following steps:
1, performing eutectic crystallization on a plurality of different chips on corresponding molybdenum-copper carriers;
the method comprises the following steps: opening the eutectic platform, and setting the temperature of the heating platform to 290 ℃; placing the carrier on an eutectic table, sticking a proper amount of gold-tin soldering paste at 280 ℃ by using a toothpick, placing the gold-tin soldering paste on the carrier, slightly clamping the chip on the carrier by using tweezers after the soldering paste is melted, and properly shifting the chip so as to firmly bond the chip and the carrier, wherein the chip is positioned in the center of the carrier as much as possible; after the eutectic is accomplished, get chip and carrier combination with tweezers gently and put into corresponding chip box, resume to the normal atmospheric temperature and receive, treat next step and use, wherein, the chip includes: a power supply chip: IC1, IC2, IC3, U1; a logic chip: u2, U3, U4, U5; an inverter: u6; a driving chip: U7A, U7B; power amplifier pulse chip: U8A, U8B; a wave control chip: U9A, U9B; customizing a core chip: U10A, U10B; driving and placing the chip: U11A, U11B; receiving an amplifying chip: U12A, U12B, U14A, U14B; a power amplifier chip: U13A, U13B; an amplitude limiting chip: U15A, U15B; a circulator: U16A, U16B; emitting a solid attenuation chip: T1A, T1B; receiving a solid attenuation chip: T2A, T2B; phase modulation chip: P1A, P1B, P2A, P2B; an NPN chip: q1; MOS chip: Q2A, Q2B; 5.1V voltage-stabilizing chip: d1; chip capacitance: c27, C28, C29, C30, C31, C32, C33, C34, C35, C36, C37, C38, C39, C40, C45, C46; array chip capacitance: c41, C42, C43, C44; eutectic crystals of P1A, U11A, C35 and C36 are arranged on the same molybdenum-copper carrier; P1B, U11B, C37 and C38 are eutectic on the same molybdenum-copper carrier; eutectic crystals of U12A, T2A and P2A are on the same molybdenum-copper carrier; eutectic crystals of U12B, T2B and P2B are on the same molybdenum-copper carrier; eutectic crystals of U13A, C41 and C42 are on the same molybdenum-copper carrier; eutectic crystals of U13B, C43 and C44 are on the same molybdenum-copper carrier; eutectic crystals of U14A, U15A and C45 are on the same molybdenum-copper carrier; eutectic crystals of U14B, U15B and C46 are on the same molybdenum-copper carrier, and eutectic crystals of U7A and U7B are on the same molybdenum-copper carrier;
step 2, sintering the plurality of joints, the substrate and the circuit board to the transceiver module shell;
step 3, sintering the common components and the eutectic chip on a circuit board to obtain a component A;
and 4, carrying out gold wire bonding on the component A, and carrying out capping after testing and debugging.
2. The method of claim 1, wherein eutectic attachment of a plurality of different chips to respective carriers in step 1 comprises:
and setting the temperature of the heating platform to be a preset temperature, and carrying out eutectic crystallization on various different chips to the central position of the carrier.
3. The method as claimed in claim 2, wherein the temperature of the heating platform is set to 285-295 ℃.
4. The method of claim 1, wherein in step 2,
brushing and then baking the plurality of connectors, the substrate and the circuit board, and cooling to 22-25 ℃;
dispensing solder paste on the plurality of connectors, the substrate and the circuit board, and placing the connectors, the substrate and the circuit board on a heating platform and sintering the connectors, the substrate and the circuit board on a housing of the transceiver module;
and (3) brushing and then baking the sintered shell of the transceiver module, and cooling to 22-25 ℃.
5. The method of claim 1, wherein in step 3, the step of sintering the common component and the eutectic die onto the circuit board comprises:
and sintering the common component and the eutectic chip on a circuit board on a heating platform, and placing the circuit board on filter paper for natural cooling.
6. The method of claim 1, wherein in step 4, the step of capping comprises:
and cleaning the tested and debugged assembly and the cover plate, matching the cover plate with the shell of the tested and debugged assembly, performing vacuum drying, and finally performing laser welding.
7. The method for manufacturing an X-band transceiver module according to claim 1, wherein in step 4, the vacuum drying time is 1.5 hours to 2.5 hours; the temperature was set at 55-65 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711246764.9A CN108161264B (en) | 2017-12-01 | 2017-12-01 | Manufacturing method of X-band transceiving component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711246764.9A CN108161264B (en) | 2017-12-01 | 2017-12-01 | Manufacturing method of X-band transceiving component |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108161264A CN108161264A (en) | 2018-06-15 |
| CN108161264B true CN108161264B (en) | 2020-10-23 |
Family
ID=62524903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711246764.9A Active CN108161264B (en) | 2017-12-01 | 2017-12-01 | Manufacturing method of X-band transceiving component |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108161264B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109347450A (en) * | 2018-09-13 | 2019-02-15 | 安徽华东光电技术研究所有限公司 | A kind of processing method of Asia 20 watts of pulse power amplifiers of terahertz wave band |
| CN109451677A (en) * | 2018-12-11 | 2019-03-08 | 安徽华东光电技术研究所有限公司 | A kind of processing method for defending logical field 35W power amplifier module |
| CN112564730B (en) * | 2020-11-13 | 2022-08-12 | 北京遥测技术研究所 | High-reliability multi-output power TR assembly with flexible design |
| CN114247949B (en) * | 2021-11-24 | 2023-04-18 | 国营芜湖机械厂 | Processing method of power amplifier module |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105530017B (en) * | 2015-11-27 | 2018-07-03 | 安徽华东光电技术研究所 | Method for manufacturing receiving front end of broadband receiving and transmitting system |
| CN106572607B (en) * | 2016-06-23 | 2019-03-12 | 安徽华东光电技术研究所 | Process manufacturing method of solid-state microwave source |
| CN106455356B (en) * | 2016-08-24 | 2019-05-03 | 安徽华东光电技术研究所 | Manufacturing and processing method of solid microwave source |
| CN107367713B (en) * | 2017-06-21 | 2020-06-12 | 安徽华东光电技术研究所 | Manufacturing and processing method of front-end module of K2 waveband receiver |
-
2017
- 2017-12-01 CN CN201711246764.9A patent/CN108161264B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN108161264A (en) | 2018-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108161264B (en) | Manufacturing method of X-band transceiving component | |
| CN107367713B (en) | Manufacturing and processing method of front-end module of K2 waveband receiver | |
| US7468560B2 (en) | Semiconductor device with micro connecting elements and method for producing the same | |
| TWI508362B (en) | System and method for integrated waveguide packaging | |
| JP2001519989A (en) | Amplifier module with two power amplifiers for dual band cellular telephone | |
| CN108112184B (en) | Manufacturing method of S-band 100-watt pulse power amplifier | |
| CN107708400A (en) | Power connects the processing method of pulse amplifier in X-band | |
| JP2011151815A (en) | Circuit board assembly and method of attaching chip to circuit board | |
| CN111106104A (en) | Manufacturing process of 18-28GHZ T assembly | |
| CN107170691B (en) | A kind of method for being superimposed on microbonding disk or carrying out automatic wedge bonding side by side | |
| CN110177436A (en) | Ku wave band 120W power amplifier prime module making process | |
| CN105161468A (en) | Radio frequency chip and passive device packaging structure and packaging method | |
| JPH1140942A (en) | Circuit board | |
| US6529650B1 (en) | Optical circuit board and method of manufacturing the same | |
| WO2021179932A1 (en) | Laser seed source system and laser radar | |
| CN109451677A (en) | A kind of processing method for defending logical field 35W power amplifier module | |
| CN104162745A (en) | GaAs-based microwave device and laser drilling processing method for monolithic integrated circuit back holes | |
| TWI242910B (en) | Apparatus and method to introduce signals into a shielded RF circuit | |
| US5904868A (en) | Mounting and/or removing of components using optical fiber tools | |
| Böck et al. | Low-cost eWLB packaging for automotive radar MMICs in the 76–81 GHz range | |
| CN113871834A (en) | Manufacturing process of quadruple frequency module | |
| CN111565518A (en) | Manufacturing process of X-band 80-watt power amplifier | |
| JP4605887B2 (en) | Mounting circuit board and mounting structure of semiconductor device | |
| Beckett et al. | The laser in manufacture-its use in the soldering of electronic assemblies | |
| CN109714009A (en) | A kind of manufacture craft of pattern-band low-noise amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 241000 Emshan Road, Yijiang District, Wuhu City, Anhui Province Patentee after: ANHUI HUADONG PHOTOELECTRIC TECHNOLOGY INSTITUTE Co.,Ltd. Address before: 241000 Huaxia science and Technology Park, Wuhu high tech Industrial Development Zone, Anhui Patentee before: Anhui Huadong Polytechnic Institute |
|
| CP03 | Change of name, title or address |