CN111565518A - Manufacturing process of X-band 80-watt power amplifier - Google Patents
Manufacturing process of X-band 80-watt power amplifier Download PDFInfo
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- CN111565518A CN111565518A CN202010419753.1A CN202010419753A CN111565518A CN 111565518 A CN111565518 A CN 111565518A CN 202010419753 A CN202010419753 A CN 202010419753A CN 111565518 A CN111565518 A CN 111565518A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000005245 sintering Methods 0.000 claims abstract description 59
- 230000005496 eutectics Effects 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000008569 process Effects 0.000 claims abstract description 12
- 230000017525 heat dissipation Effects 0.000 claims abstract description 10
- 238000007789 sealing Methods 0.000 claims abstract description 6
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims abstract description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000005476 soldering Methods 0.000 claims description 74
- 239000003990 capacitor Substances 0.000 claims description 39
- 239000012212 insulator Substances 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 24
- 238000003825 pressing Methods 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 23
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 18
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 16
- 230000003321 amplification Effects 0.000 claims description 15
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 15
- 239000002390 adhesive tape Substances 0.000 claims description 13
- 238000003466 welding Methods 0.000 claims description 10
- 238000011068 loading method Methods 0.000 claims description 9
- 241000587161 Gomphocarpus Species 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 238000003892 spreading Methods 0.000 claims description 7
- 230000007480 spreading Effects 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 229920000742 Cotton Polymers 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 16
- 238000011161 development Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/03—Details of HF subsystems specially adapted therefor, e.g. common to transmitter and receiver
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/282—Applying non-metallic protective coatings for inhibiting the corrosion of the circuit, e.g. for preserving the solderability
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
- H05K3/305—Affixing by adhesive
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Networks & Wireless Communication (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a manufacturing process of an X-band 80-watt power amplifier, which comprises the following steps: sintering a Rogers 5880 radio frequency circuit board, eutectic crystal of an 80W power amplifier chip, gluing a resistance-capacitance component, bonding a gold wire, and arranging a cover plate into a main cavity of the 80W power amplifier module qualified in electrical test to complete sealing; the manufacturing process of the X-band 80-watt power amplifier is reasonable in design, the stable and reliable X-band 80-watt power amplifier can be efficiently manufactured by means of a microelectronic package process technology, and the manufactured amplifier has the characteristics of good heat dissipation, excellent indexes, high stability, small size, high reliability and the like.
Description
Technical Field
The invention relates to the technical field of microwave module manufacturing, in particular to a manufacturing process of an X-band 80-watt power amplifier.
Background
With the rapid development of active phased array radars and meteorological radars, radio frequency monolithic integrated circuits have become an important pillar for the current development of various radars and communication systems, and are widely applied to various advanced ship-borne fire control radars and various airborne active phased array radars of advanced fighters.
With the rapid development of radar technology, an X-band 80W pulse power amplifier is applied more and more widely in various fields, for example, an airborne fire control radar system can emit higher power after adopting the X-band 80W pulse power amplifier, so that the identification precision is improved, and the detection distance of a fighter is increased; the communication measuring equipment increases the power of a transmitting channel by using an X-band 80W pulse power amplifier; in the X-band active phased array radar, an X-band 80W pulse power amplifier is a main component unit of a TR component, and the power amplifier can better solve the problems of low output power and high noise of signals; however, the existing X-band 80-watt power amplifier has a complex manufacturing process and low manufacturing efficiency, and the manufactured amplifier has poor stability and reliability.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the manufacturing process of the X-band 80-watt power amplifier, which is reasonable in manufacturing process and can efficiently manufacture the stable and reliable X-band 80-watt power amplifier.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
the manufacturing process of the X-waveband 80-watt power amplifier comprises the following steps:
s1: the sintering of the radio frequency circuit board specifically comprises the following steps:
s11: the front side of the radio frequency circuit board and the outer wall of the main cavity of the 80W power amplifier module are completely pasted with high-temperature adhesive tapes for protection by pasting films;
s12: matching solder paste: uniformly smearing soldering paste on the back of the radio frequency circuit board;
s13: wiping the back surface of the radio frequency circuit board and the sintering position of the radio frequency circuit board in the main cavity of the 8W power amplifier module by alcohol cotton, and drying after wiping; coating a layer of soldering flux on the front and back surfaces of the soldering paste, uniformly spreading the soldering paste in the cavity, pasting the soldering paste on the front surface of the radio frequency circuit board to be in contact with the main cavity of the 8W power amplifier module, and pressing the radio frequency circuit board to make the radio frequency circuit board fully contact with the soldering paste;
s14: installing a feed insulator: coating soldering paste on the metal wall of the feed insulator by using an automatic dispenser, loading the soldering paste into a cavity, placing one side of a nail head of the feed insulator on the front surface of the cavity of the power amplifier module, leveling the nail head of the feed insulator with the plane in the main cavity of the 8W power amplifier module, and loading a radio frequency circuit board sintering press block;
s15: placing the module finished in the previous step on a heating platform for sintering, quickly taking down the main cavity of the 8W power amplifier module after the tin to be welded is melted, placing the main cavity on a heat dissipation plate, pressing a radio frequency circuit board sintering tool, taking down the radio frequency circuit board sintering tool after pressing, and tearing off a high-temperature adhesive tape on the radio frequency circuit board;
s2: the eutectic crystal of the 80W power amplifier chip specifically comprises the following steps:
s21: and (3) matching gold and tin soldering pieces: cutting the gold-tin soldering lug into soldering lugs with the same size under a microscope;
s22: placing the prepared gold-tin soldering lug, the carrier and the chip in a glass ware, and cleaning by using a plasma cleaning machine;
s23: eutectic crystallization of the chip: firstly, performing power amplification chip eutectic, placing a carrier on a heating table of an eutectic table for fixing, uniformly spreading soldering lugs of the corresponding carrier on the carrier, coating the soldering lugs, clamping a power amplifier to perform eutectic in a coating area, and clamping a chip capacitor to perform eutectic to a chip position;
s24: and (3) sintering the chip: placing the eutectic 80W power amplification assembly coated with the soldering tin into the main cavity of the 80W power amplifier module which is assembled in S1, placing the main cavity on a heating platform, and sintering the main cavity in a friction welding mode by using tweezers under a microscope;
s3: the gluing of the container resistance part specifically comprises the following steps:
s31: mounting a resistor: coating conductive adhesive at the contact position of the resistor and the radio frequency circuit board by using a pneumatic dispenser, and attaching the resistor to the position of the resistor;
s32: mounting a capacitor: coating conductive adhesive at the contact position of the capacitor and the radio frequency circuit board by using a pneumatic dispenser, and mounting the capacitor at the position of the capacitor;
s33: placing the main cavity of the 80W power amplifier module pasted with the resistor and the capacitor on an oven for baking; taking down the main cavity of the 80W power amplifier module from the oven, placing the main cavity on a radiating block, and radiating to cool;
s34: cleaning the main cavity of the 80W power amplifier module glued with the resistor and the capacitor in the previous step, wherein the front surface of the main cavity of the 80W power amplifier module is downward during cleaning, and the insulator is prevented from being deformed and damaged in operation;
s4: gold wire bonding: gold wire bonding is used between the power supply bonding pad of the power amplifier and the microwave circuit board, and wedge-shaped welding is used between the bonding pads of the rest chip capacitors and the radio frequency circuit board;
s5: and (7) sealing the cover.
Wherein the content of the first and second substances,
the radio frequency circuit board is a Rogers 5880 type radio frequency circuit board.
In the step S12, the 215-220 ℃ solder paste is uniformly smeared on the back of the rf circuit board by using a tool knife, and the paste is uniformly scraped on the back of the rf circuit board.
And S15, placing the module finished in the previous step on a heating platform at 230 +/-5 ℃ for sintering, wherein the sintering time is 2-3min, quickly taking down the main cavity of the 8W power amplifier module after the tin is melted and placing the main cavity on a heat dissipation plate, pressing the radio frequency circuit board sintering tool with a shovel, taking down the radio frequency circuit board sintering tool after pressing for 10-20S, tearing off the high-temperature adhesive tape on the radio frequency circuit board with the shovel, and the force is uniform during pressing.
In the step of S21, the gold-tin soldering lug is Au80Sn20 gold-tin soldering lug, and the thickness of the gold-tin soldering lug is controlled to be 0.018-0.022 mm.
In the step S23, a high-precision tweezers is used to clamp the carrier and place the carrier on a heating table of an eutectic table for fixing, wherein the temperature of the eutectic table of the heating table is 335 +/-5 ℃; .
And in the step S24, the eutectic 80W power amplification assembly coated with the soldering tin is arranged in the main cavity of the 80W power amplifier module which is assembled in the step S1, the main cavity is placed on a heating platform at 200 ℃ and 180 ℃, and sintering is carried out under a microscope in a friction welding mode by using tweezers, wherein the single chip friction time is 1-3S.
In the step S31, the resistors are four JRC03K101FT resistors.
In the step S32, the capacitor is a capacitor JCC41L0603CG50V 103J.
And in the step S33, placing the main cavity of the 80W power amplifier module pasted with the resistor and the capacitor on a baking oven at 90 +/-5 ℃, and baking for 10-12 h.
Compared with the prior art, the invention has the following advantages:
the manufacturing process of the X-band 80-watt power amplifier is reasonable in design, the stable and reliable X-band 80-watt power amplifier can be efficiently manufactured by means of a microelectronic package process technology, and the manufactured amplifier has the characteristics of good heat dissipation, excellent indexes, high stability, small size, high reliability and the like.
Drawings
The contents of the description and the references in the drawings are briefly described as follows:
FIG. 1 is a schematic diagram of a radio frequency circuit board according to the present invention.
FIG. 2 is a schematic diagram of the sintering of the RF circuit board of the present invention.
FIG. 3 is a eutectic diagram of an 80W power amplifier chip according to the present invention.
FIG. 4 is a schematic diagram of the sintering of an 80W power amplification module according to the present invention.
Fig. 5 is a schematic view of a sintered assembly of a resistance-capacitance element and an insulator according to the present invention.
FIG. 6 is a schematic diagram of gold wire bonding of an 80W power amplifier according to the present invention.
Fig. 7 is a schematic diagram of a main cavity of the structure of the 80W power amplifier module of the invention.
Fig. 8 is a schematic diagram of the upper cover plate of the 80W power amplifier according to the invention.
FIG. 9 is a schematic diagram of a sintered compact for an 80W power amplifier according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made in detail with reference to the accompanying drawings.
The manufacturing process of the X-waveband 80-watt power amplifier comprises the following steps:
s1: the sintering of the radio frequency circuit board specifically comprises the following steps:
s11: the front side of the radio frequency circuit board and the outer wall of the main cavity of the 80W power amplifier module are completely pasted with high-temperature adhesive tapes for protection by pasting films;
s12: matching solder paste: uniformly smearing soldering paste on the back of the radio frequency circuit board;
s13: wiping the back surface of the radio frequency circuit board and the sintering position of the radio frequency circuit board in the main cavity of the 8W power amplifier module by alcohol cotton, and drying after wiping; coating a layer of soldering flux on the front and back surfaces of the soldering paste, uniformly spreading the soldering paste in the cavity, pasting the soldering paste on the front surface of the radio frequency circuit board to be in contact with the main cavity of the 8W power amplifier module, and pressing the radio frequency circuit board to make the radio frequency circuit board fully contact with the soldering paste;
s14: installing a feed insulator: coating soldering paste on the metal wall of the feed insulator by using an automatic dispenser, loading the soldering paste into a cavity, placing one side of a nail head of the feed insulator on the front surface of the cavity of the power amplifier module, leveling the nail head of the feed insulator with the plane in the main cavity of the 8W power amplifier module, and loading a radio frequency circuit board sintering press block;
s15: placing the module finished in the previous step on a heating platform for sintering, quickly taking down the main cavity of the 8W power amplifier module after the tin to be welded is melted, placing the main cavity on a heat dissipation plate, pressing a radio frequency circuit board sintering tool, taking down the radio frequency circuit board sintering tool after pressing, and tearing off a high-temperature adhesive tape on the radio frequency circuit board;
s2: the eutectic crystal of the 80W power amplifier chip specifically comprises the following steps:
s21: and (3) matching gold and tin soldering pieces: cutting the gold-tin soldering lug into soldering lugs with the same size under a microscope;
s22: placing the prepared gold-tin soldering lug, the carrier and the chip in a glass ware, and cleaning by using a plasma cleaning machine;
s23: eutectic crystallization of the chip: firstly, performing power amplification chip eutectic, placing a carrier on a heating table of an eutectic table for fixing, uniformly spreading soldering lugs of the corresponding carrier on the carrier, coating the soldering lugs, clamping a power amplifier to perform eutectic in a coating area, and clamping a chip capacitor to perform eutectic to a chip position;
s24: and (3) sintering the chip: placing the eutectic 80W power amplification assembly coated with the soldering tin into the main cavity of the 80W power amplifier module which is assembled in S1, placing the main cavity on a heating platform, and sintering the main cavity in a friction welding mode by using tweezers under a microscope;
s3: the gluing of the container resistance part specifically comprises the following steps:
s31: mounting a resistor: coating conductive adhesive at the contact position of the resistor and the radio frequency circuit board by using a pneumatic dispenser, and attaching the resistor to the position of the resistor;
s32: mounting a capacitor: coating conductive adhesive at the contact position of the capacitor and the radio frequency circuit board by using a pneumatic dispenser, and mounting the capacitor at the position of the capacitor;
s33: placing the main cavity of the 80W power amplifier module pasted with the resistor and the capacitor on an oven for baking; taking down the main cavity of the 80W power amplifier module from the oven, placing the main cavity on a radiating block, and radiating to cool;
s34: cleaning the main cavity of the 80W power amplifier module glued with the resistor and the capacitor in the previous step, wherein the front surface of the main cavity of the 80W power amplifier module is downward during cleaning, and the insulator is prevented from being deformed and damaged in operation;
s4: gold wire bonding: gold wire bonding is used between the power supply bonding pad of the power amplifier and the microwave circuit board, and wedge-shaped welding is used between the bonding pads of the rest chip capacitors and the radio frequency circuit board;
s5: and (7) sealing the cover.
Wherein, the radio frequency circuit board is a Rogers 5880 type radio frequency circuit board.
In the step S12, uniformly smearing the 215-220 ℃ soldering paste on the back of the radio frequency circuit board by using a tool knife, and uniformly scraping the soldering paste on the back of the radio frequency circuit board; and S15, placing the module finished in the previous step on a heating platform at 230 +/-5 ℃ for sintering, wherein the sintering time is 2-3min, quickly taking down the main cavity of the 8W power amplifier module after the tin is melted and placing the main cavity on a heat dissipation plate, pressing the radio frequency circuit board sintering tool with a shovel, taking down the radio frequency circuit board sintering tool after pressing for 10-20S, tearing off the high-temperature adhesive tape on the radio frequency circuit board with the shovel, and pressing with uniform force.
In the step S21, the gold-tin soldering lug is an Au80Sn20 gold-tin soldering lug, and the thickness of the gold-tin soldering lug is controlled to be 0.018-0.022 mm; in the step S23, a high-precision tweezers is used to clamp and place the carrier on a heating table of an eutectic table for fixation, and the temperature of the eutectic table of the heating table is 335 +/-5 ℃; and S24, placing the eutectic 80W power amplification assembly coated with soldering tin into the main cavity of the 80W power amplifier module which is assembled in the S1, placing the main cavity on a heating platform at 200 ℃, and sintering the main cavity in a friction welding mode by using tweezers under a microscope, wherein the single chip friction time is 1-3S.
In the step S31, the resistors are four JRC03K101FT resistors; in the step S32, the capacitor is JCC41L0603CG50V103J capacitor; and S33, placing the main cavity of the 80W power amplifier module with the resistor and the capacitor attached on the main cavity on a baking oven at 90 +/-5 ℃, and baking for 10-12 h.
The manufacturing process of the X-band 80-watt power amplifier is reasonable in design, the stable and reliable X-band 80-watt power amplifier can be efficiently manufactured by means of a microelectronic package process technology, and the manufactured amplifier has the characteristics of good heat dissipation, excellent indexes, high stability, small size, high reliability and the like.
Preferred specific examples are:
a manufacturing method of an X-band 80W pulse power amplifier comprises the following steps:
step 1: rogers 5880 radio frequency circuit board sintering
1.1, comparing Rogers 5880 radio frequency circuit board with the sintering schematic diagram of Rogers 5880 radio frequency circuit board 1 and 2, sticking film for protection: completely sticking high-temperature adhesive tapes to the front surface of the Rogers 5880 radio frequency circuit board and the outer wall of a main cavity of an 80W power amplifier module, cutting off redundant high-temperature adhesive tapes at the edge by using a tool knife, and leveling the high-temperature adhesive tapes with the edge;
1.2, matching solder paste according to Rogers 5880 radio frequency circuit board figure 1: using a tool knife to uniformly smear 217 ℃ soldering paste on the back of the Rogers 5880 radio frequency circuit board, and using a ruler to uniformly scrape the soldering paste on the back of the Rogers 5880 radio frequency circuit board.
1.3, according to the sintering schematic diagram 2 of the Rogers 5880 radio frequency circuit board, wiping the back surface of the Rogers 5880 radio frequency circuit board and the sintering position of the Rogers 5880 radio frequency circuit board in the main cavity of the 8W power amplifier module by alcohol cotton, and placing the Rogers 5880 radio frequency circuit board on drying paper to be dried for 6 minutes after wiping. Coating a layer of low-residue soldering flux on the front and back surfaces of the soldering paste, placing the soldering paste in the cavity by using a shovel, uniformly spreading the soldering paste, placing the Rogers 5880 radio frequency circuit board attached with the front surface of the Rogers in the main cavity of the 8W power amplifier module, and lightly pressing the radio frequency circuit board by using the shovel to enable the radio frequency circuit board to be fully contacted with the soldering paste.
1.4, mounting a feed insulator according to a resistance-capacitance and insulator sintering assembly diagram 5: coating 217 ℃ of soldering paste on the metal wall of the feed insulator by using an automatic dispenser, loading the soldering paste into a cavity, placing the feed insulator 142 and 1000 and 002 (J1-J4, 4 in total), placing one surface of a nail head of the feed insulator on the front surface of the cavity of the power amplifier module, leveling the nail head with the plane in the main cavity of the 8W power amplifier module, and loading a radio frequency circuit board sintering pressing block (figure 9);
1.5, according to a Rodgees 5880 radio frequency circuit board sintering schematic diagram 2 and a resistance-capacitance and insulator sintering assembly diagram 5, placing the module (the module assembled with the radio frequency circuit board, the insulator and the pressing block) completed in the previous step on a (230 +/-5) DEG C heating platform for sintering, wherein the sintering time is (2-3) min, quickly taking down the main cavity of the 8W power amplifier module after the tin is melted and placing the main cavity on a heat dissipation plate, pressing the radio frequency circuit board sintering tool with a shovel, taking down the radio frequency circuit board sintering tool after pressing for (10-20) s, tearing off a high-temperature adhesive tape on the radio frequency circuit board with the shovel, and ensuring that the force is uniform during pressing.
Step 2: eutectic crystal of 80W power amplifier chip
2.1, according to an eutectic figure 3 of an 80W power amplification chip, matching gold and tin soldering pieces: under a 30X microscope, the Au80Sn20 (thickness 0.02mm) is cut into 1 size by a scalpel, and the size of the soldering lug is consistent with that of the carrier 1 (3.5X 8.5X 0.2);
2.2 placing the prepared gold-tin soldering lug Au80Sn20, the carrier and the chip in a glass ware, cleaning by using a plasma cleaning machine, and suggesting cleaning parameters (weak cleaning mode, ultrasonic 20W and ultrasonic time 100s), wherein the specific cleaning content is as follows: the cut au-sn-bonding pad, carrier 1(3.5 × 8.5 × 0.2), 1 power amplifier GN0812-P46 (2); 8 chip capacitors SG251N101MNTW (C1, C2, C3, C4, C5, C6, C7 and C8);
2.3 according to 80W power amplification chip eutectic figure 3, the chip eutectic: GN0812-P46 power amplification chip eutectic is firstly carried out, a carrier 1(3.5 x 8.5 x 0.2) is clamped by a high-precision tweezers and is placed on a heating table of a eutectic table to be fixed (the temperature of the eutectic table is recommended to be 335 +/-5 ℃), a soldering lug of the corresponding carrier No. 1(3.5 x 8.5 x 0.2) is evenly laid on the carrier 1(3.5 x 8.5 x 0.2), the soldering lug is coated by a tweezers tip (within 1 s), 1 cleaned power amplifier GN0812-P46(2) is clamped by the tweezers lightly to carry out eutectic in a coating area, 2 times of left and right friction are required, the friction time (1 to 3) s is clamped by the tweezers to a chip clamping capacitor SG251N101MNTW (8 times of total) to C1, C2, C3, C4, C5, C6, C7, C2 times of right friction is required, and the total friction time is not more than 20 times of left and right friction time is not more than 20. Remarking: note that the power amplifier chips IN and OUT directions are distinguished.
2.4 sintering of the assembly according to the 80W power amplification schematic 4, sintering of the chip: and (2) loading the eutectic 80W power amplification assembly coated with soldering tin into the main cavity of the 80W power amplifier module assembled in the step (1), placing the main cavity on a heating platform at 190 ℃, sintering the main cavity in a small-amplitude friction welding mode by using high-precision tweezers under a microscope, wherein the friction times are 3 times, the single-chip friction time is 1-3S, and the total friction time is not more than 20S.
And step 3: gluing of containers
3.1, mounting a resistor according to a resistor-capacitor and insulator sintering assembly diagram 5: and (3) coating conductive adhesive at the contact positions of the R1, R2, R3 and R4 and the radio frequency circuit board by using a pneumatic dispenser, and mounting 4 resistors JRC03K101FT at the positions of R1, R2, R3 and R4.
3.2 according to resistance-capacitance and insulator sintering assembly figure 5, paste dress electric capacity: and (3) coating conductive adhesive at the contact positions of the C1 and the C2 with the radio frequency circuit board by using an air dispenser, and mounting 2 capacitors JCC41L0603CG50V103J at the positions of C1 and C2.
3.3 placing the main cavity of the 80W power amplifier module with the resistor and the capacitor attached on the oven at 90 +/-5 ℃ for 10-12 h. And (4) taking the main cavity of the 80W power amplifier module from the oven by using tweezers, placing the main cavity on the radiating block, and radiating the heat to cool.
3.4 use the vapor phase cleaning machine to wash the 80W power amplifier module main cavity of the last step glued resistance and electric capacity, recommend the washing parameter (cook 700s, supersound 700s, dry, 700s), the 80W power amplifier module main cavity front face is down during the washing, avoids insulator deformation, damage in the operation.
And 4, step 4: gold wire bonding
According to the gold wire bonding schematic diagram 6 of the 80W power amplifier, gold wire bonding is carried OUT, 15 mu m gold wire bonding (recommended ultrasonic power 200 and ultrasonic time 50ms) is used between the power supply bonding pads of the power amplifiers GN0812-P46 and the microwave circuit board, and wedge type bonding (recommended ultrasonic power 100 and ultrasonic time 50ms) is used between the bonding pads (IN and OUT) of the rest chip capacitors SG251N101MNTW (C1, C2, C3, C4, C5, C6, C7 and C8) and the radio frequency circuit board.
And 5: sealing cover
According to the schematic diagram 8 of the upper cover plate of the 80W power amplifier, the cover plate is assembled: and (3) installing the cover plate into a main cavity of the 80W power amplifier module qualified in electrical test, and locking and sealing the cover by using 10M 1.6 multiplied by 4 cross flat head screws.
Therefore, the X-band 80W pulse power amplifier is processed, the manufacturing process is reasonable, and the stable and reliable X-band 80W power amplifier can be manufactured efficiently.
The above-mentioned features are merely for describing preferred embodiments of the present invention and may be arbitrarily combined to form a plurality of embodiments of the present invention.
The invention is described above with reference to the accompanying drawings, it is obvious that the specific implementation of the invention is not limited by the above-mentioned manner, and it is within the scope of the invention to adopt various insubstantial modifications of the inventive concept and solution, or to apply the inventive concept and solution directly to other applications without modification.
Claims (10)
1. A manufacturing process of an X-band 80-watt power amplifier is characterized by comprising the following steps: the manufacturing process comprises the following steps:
s1: the sintering of the radio frequency circuit board specifically comprises the following steps:
s11: the front side of the radio frequency circuit board and the outer wall of the main cavity of the 80W power amplifier module are completely pasted with high-temperature adhesive tapes for protection by pasting films;
s12: matching solder paste: uniformly smearing soldering paste on the back of the radio frequency circuit board;
s13: wiping the back surface of the radio frequency circuit board and the sintering position of the radio frequency circuit board in the main cavity of the 8W power amplifier module by alcohol cotton, and drying after wiping; coating a layer of soldering flux on the front and back surfaces of the soldering paste, uniformly spreading the soldering paste in the cavity, pasting the soldering paste on the front surface of the radio frequency circuit board to be in contact with the main cavity of the 8W power amplifier module, and pressing the radio frequency circuit board to make the radio frequency circuit board fully contact with the soldering paste;
s14: installing a feed insulator: coating soldering paste on the metal wall of the feed insulator by using an automatic dispenser, loading the soldering paste into a cavity, placing one side of a nail head of the feed insulator on the front surface of the cavity of the power amplifier module, leveling the nail head of the feed insulator with the plane in the main cavity of the 8W power amplifier module, and loading a radio frequency circuit board sintering press block;
s15: placing the module finished in the previous step on a heating platform for sintering, quickly taking down the main cavity of the 8W power amplifier module after the tin to be welded is melted, placing the main cavity on a heat dissipation plate, pressing a radio frequency circuit board sintering tool, taking down the radio frequency circuit board sintering tool after pressing, and tearing off a high-temperature adhesive tape on the radio frequency circuit board;
s2: the eutectic crystal of the 80W power amplifier chip specifically comprises the following steps:
s21: and (3) matching gold and tin soldering pieces: cutting the gold-tin soldering lug into soldering lugs with the same size under a microscope;
s22: placing the prepared gold-tin soldering lug, the carrier and the chip in a glass ware, and cleaning by using a plasma cleaning machine;
s23: eutectic crystallization of the chip: firstly, performing power amplification chip eutectic, placing a carrier on a heating table of an eutectic table for fixing, uniformly spreading soldering lugs of the corresponding carrier on the carrier, coating the soldering lugs, clamping a power amplifier to perform eutectic in a coating area, and clamping a chip capacitor to perform eutectic to a chip position;
s24: and (3) sintering the chip: placing the eutectic 80W power amplification assembly coated with the soldering tin into the main cavity of the 80W power amplifier module which is assembled in S1, placing the main cavity on a heating platform, and sintering the main cavity in a friction welding mode by using tweezers under a microscope;
s3: the gluing of the container resistance part specifically comprises the following steps:
s31: mounting a resistor: coating conductive adhesive at the contact position of the resistor and the radio frequency circuit board by using a pneumatic dispenser, and attaching the resistor to the position of the resistor;
s32: mounting a capacitor: coating conductive adhesive at the contact position of the capacitor and the radio frequency circuit board by using a pneumatic dispenser, and mounting the capacitor at the position of the capacitor;
s33: placing the main cavity of the 80W power amplifier module pasted with the resistor and the capacitor on an oven for baking; taking down the main cavity of the 80W power amplifier module from the oven, placing the main cavity on a radiating block, and radiating to cool;
s34: cleaning the main cavity of the 80W power amplifier module glued with the resistor and the capacitor in the previous step, wherein the front surface of the main cavity of the 80W power amplifier module is downward during cleaning, and the insulator is prevented from being deformed and damaged in operation;
s4: gold wire bonding: gold wire bonding is used between the power supply bonding pad of the power amplifier and the microwave circuit board, and wedge-shaped welding is used between the bonding pads of the rest chip capacitors and the radio frequency circuit board;
s5: and (7) sealing the cover.
2. The process of claim 1 for making an X-band 80 watt power amplifier, wherein: the radio frequency circuit board is a Rogers 5880 type radio frequency circuit board.
3. The process of claim 1 for making an X-band 80 watt power amplifier, wherein: in the step S12, the 215-220 ℃ solder paste is uniformly smeared on the back of the rf circuit board by using a tool knife, and the paste is uniformly scraped on the back of the rf circuit board.
4. The process of claim 1 for making an X-band 80 watt power amplifier, wherein: and S15, placing the module finished in the previous step on a heating platform at 230 +/-5 ℃ for sintering, wherein the sintering time is 2-3min, quickly taking down the main cavity of the 8W power amplifier module after the tin is melted and placing the main cavity on a heat dissipation plate, pressing the radio frequency circuit board sintering tool with a shovel, taking down the radio frequency circuit board sintering tool after pressing for 10-20S, tearing off the high-temperature adhesive tape on the radio frequency circuit board with the shovel, and the force is uniform during pressing.
5. The process of claim 1 for making an X-band 80 watt power amplifier, wherein: in the step of S21, the gold-tin soldering lug is Au80Sn20 gold-tin soldering lug, and the thickness of the gold-tin soldering lug is controlled to be 0.018-0.022 mm.
6. The process of claim 1 for making an X-band 80 watt power amplifier, wherein: in the step S23, a high-precision tweezers is used to clamp the carrier and place the carrier on a heating table of an eutectic table for fixing, wherein the temperature of the eutectic table of the heating table is 335 +/-5 ℃; .
7. The process of claim 1 for making an X-band 80 watt power amplifier, wherein: and in the step S24, the eutectic 80W power amplification assembly coated with the soldering tin is arranged in the main cavity of the 80W power amplifier module which is assembled in the step S1, the main cavity is placed on a heating platform at 200 ℃ and 180 ℃, and sintering is carried out under a microscope in a friction welding mode by using tweezers, wherein the single chip friction time is 1-3S.
8. The process of claim 1 for making an X-band 80 watt power amplifier, wherein: in the step S31, the resistors are four JRC03K101FT resistors.
9. The process of claim 1 for making an X-band 80 watt power amplifier, wherein: in the step S32, the capacitor is a capacitor JCC41L0603CG50V 103J.
10. The process of claim 1 for making an X-band 80 watt power amplifier, wherein: and in the step S33, placing the main cavity of the 80W power amplifier module pasted with the resistor and the capacitor on a baking oven at 90 +/-5 ℃, and baking for 10-12 h.
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| CN202010419753.1A CN111565518A (en) | 2020-05-18 | 2020-05-18 | Manufacturing process of X-band 80-watt power amplifier |
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| CN202010419753.1A CN111565518A (en) | 2020-05-18 | 2020-05-18 | Manufacturing process of X-band 80-watt power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114247949A (en) * | 2021-11-24 | 2022-03-29 | 国营芜湖机械厂 | Processing method of power amplifier module |
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| US20170055341A1 (en) * | 2012-04-24 | 2017-02-23 | Innogration (Suzhou) Co., Ltd. | Unpacked structure for power device of radio frequency power amplification module and assembly method therefor |
| CN108768304A (en) * | 2018-06-14 | 2018-11-06 | 安徽华东光电技术研究所有限公司 | A kind of manufacture craft of 50 watts of power amplifiers of S-band |
| CN110290692A (en) * | 2019-06-27 | 2019-09-27 | 安徽华东光电技术研究所有限公司 | A kind of manufacture craft of 10 watts of power amplifier modules of X-band |
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| JP2001244711A (en) * | 2000-02-28 | 2001-09-07 | Nec Corp | Connection method for circuit board and microwave power combining amplifier using the same |
| US20170055341A1 (en) * | 2012-04-24 | 2017-02-23 | Innogration (Suzhou) Co., Ltd. | Unpacked structure for power device of radio frequency power amplification module and assembly method therefor |
| CN108768304A (en) * | 2018-06-14 | 2018-11-06 | 安徽华东光电技术研究所有限公司 | A kind of manufacture craft of 50 watts of power amplifiers of S-band |
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